CN113148988B - Preparation method of nitrogen-atom-doped graphene quantum dot - Google Patents
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 76
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 58
- 239000002096 quantum dot Substances 0.000 title claims abstract description 36
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 32
- 125000004433 nitrogen atom Chemical group N* 0.000 claims abstract description 25
- 239000002243 precursor Substances 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 20
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 17
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000006243 chemical reaction Methods 0.000 claims abstract description 16
- 239000006260 foam Substances 0.000 claims abstract description 16
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 14
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 14
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims abstract description 11
- 235000011114 ammonium hydroxide Nutrition 0.000 claims abstract description 11
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000003792 electrolyte Substances 0.000 claims abstract description 7
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 7
- 238000006862 quantum yield reaction Methods 0.000 claims abstract description 7
- 238000002390 rotary evaporation Methods 0.000 claims abstract description 6
- 230000035484 reaction time Effects 0.000 claims abstract description 5
- 238000001914 filtration Methods 0.000 claims abstract description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 24
- 239000001257 hydrogen Substances 0.000 claims description 18
- 229910052739 hydrogen Inorganic materials 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 14
- 239000012298 atmosphere Substances 0.000 claims description 13
- 229910052786 argon Inorganic materials 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 11
- 239000010453 quartz Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 6
- 229920000877 Melamine resin Polymers 0.000 claims description 5
- 239000012300 argon atmosphere Substances 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 5
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 claims description 5
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract description 13
- 239000000126 substance Substances 0.000 abstract description 2
- 238000001308 synthesis method Methods 0.000 abstract description 2
- 230000001699 photocatalysis Effects 0.000 abstract 1
- 238000007146 photocatalysis Methods 0.000 abstract 1
- 150000002431 hydrogen Chemical class 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000001237 Raman spectrum Methods 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 2
- 150000001721 carbon Chemical group 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- JDZCKJOXGCMJGS-UHFFFAOYSA-N [Li].[S] Chemical compound [Li].[S] JDZCKJOXGCMJGS-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000000799 fluorescence microscopy Methods 0.000 description 1
- 238000009396 hybridization Methods 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 239000011232 storage material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
- C01B32/19—Preparation by exfoliation
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/194—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B1/00—Electrolytic production of inorganic compounds or non-metals
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2204/00—Structure or properties of graphene
- C01B2204/20—Graphene characterized by its properties
- C01B2204/22—Electronic properties
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2204/00—Structure or properties of graphene
- C01B2204/20—Graphene characterized by its properties
- C01B2204/30—Purity
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- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
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- Nanotechnology (AREA)
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Abstract
The invention discloses a preparation method of a graphene quantum dot doped with nitrogen atoms, which comprises the following steps: preparing a nitrogen-doped carbon nano tube/nitrogen-doped graphene three-dimensional hybrid material taking nickel foam as a substrate, and taking the nitrogen-doped carbon nano tube/nitrogen-doped graphene three-dimensional hybrid material as a precursor; placing the precursor into a double-electrode system with 0.1-0.3 mol/L ammonia solution as electrolyte, wherein the current is 0.01A, the reaction time is 4-8 h, the precursor is used as a working electrode, and a platinum sheet is used as a counter electrode; and after the reaction is finished, filtering the reaction solution, and performing rotary evaporation to obtain the graphene quantum dot doped with nitrogen atoms. The nitrogen doping content of the graphene quantum dot prepared by the method is up to 18%, the chemical property and electron transport of the quantum dot can be improved by high-content nitrogen doping, and in addition, the fluorescence quantum yield of the graphene quantum dot is up to 19.3%. The simple, green and economic synthesis method provides a new way for preparing the graphene quantum dots doped with nitrogen atoms, and has wide application prospects in the aspects of biosensors, photocatalysis, supercapacitors and the like.
Description
Technical Field
The invention relates to the technical field of functional materials, in particular to a preparation method of a graphene quantum dot doped with nitrogen atoms.
Background
The graphene has excellent thermal conductivity, higher carrier mobility, larger theoretical specific surface area and excellent mechanical properties, so that the graphene has wide application prospects in the fields of energy storage materials such as lithium ion batteries, super capacitors, lithium-sulfur batteries and the like. Graphene is used as a zero-band-gap semiconductor with infinite exciton bohr radius, and shows quantum confinement effect, but the characteristic of zero band gap greatly limits the application of the graphene in the fields of optics and photoelectrons. Through a great deal of research, researchers find that a novel carbon nanomaterial, namely Graphene Quantum Dots (GQDs), which has good water solubility and a tunable band gap can be obtained by cutting two-dimensional graphene through various synthesis methods, such as an electrochemical method, an acid oxidation method, a microwave method and the like.
Graphene Quantum Dots (GQDs) are widely applied to the fields of biology, medicine, energy sources and the like due to high electron mobility, good chemical stability and high biocompatibility. The unique quantum confinement effect and boundary effect make the quantum confinement effect have great potential in photoelectric equipment and fluorescence imaging. The performance of the graphene quantum dots in all aspects can be further improved by doping the graphene quantum dots. For example, the addition of nitrogen atoms helps to enhance the surface polarity of graphene quantum dots, and can enhance their conductivity. However, how to prepare graphene quantum dots with high quality, controllability and high fluorescence quantum yield is still an important problem of current research.
Disclosure of Invention
The invention aims to provide a preparation method of a nitrogen atom doped graphene quantum dot, which uses a nitrogen doped carbon nano tube/nitrogen doped graphene three-dimensional hybrid material with nickel foam as a substrate as a precursor to obtain the nitrogen atom doped graphene quantum dot with high photoluminescence quantum yield.
In order to achieve the above purpose, the technical scheme of the invention is as follows:
a preparation method of a graphene quantum dot doped with nitrogen atoms comprises the following steps:
(1) Preparing a nitrogen-doped carbon nano tube/nitrogen-doped graphene three-dimensional hybrid material taking nickel foam as a substrate, and taking the nitrogen-doped carbon nano tube/nitrogen-doped graphene three-dimensional hybrid material as a precursor;
(2) Placing the precursor prepared in the step (1) into a double-electrode system with 0.1-0.3 mol/L ammonia solution as electrolyte, wherein the current is 0.01A, the reaction time is 4-8 h, the precursor is used as a working electrode, and a platinum sheet is used as a counter electrode;
(3) And after the reaction is finished, filtering the reaction solution, and performing rotary evaporation to obtain the graphene quantum dot doped with nitrogen atoms.
Preferably, the specific process of the step (1) is as follows: nickel foam was combined with melamine at 1:5, placing the mixed materials on a quartz boat after mixing in a mass ratio, placing the quartz boat in a tube furnace, heating to 800 ℃ in a hydrogen atmosphere, maintaining 800 ℃ and annealing for 0.5h in a mixed gas atmosphere, and finally cooling to room temperature in an argon atmosphere, wherein the mixed gas comprises argon and hydrogen in a volume ratio of 5:1.
Preferably, the voltage of the double-electrode system in the step (2) is 5-10V, and the distance between the working electrode and the counter electrode is 2-4 cm.
Preferably, the concentration of the ammonia solution in the step (2) is 0.2mol/L, the reaction time is 8 hours, and the area of the platinum sheet is 15mm 2 。
Preferably, the nickel foam is also washed and dried prior to mixing.
Preferably, the tube furnace is heated to 600 ℃ at a first heating rate and then to 800 ℃ at a second heating rate, wherein the first heating rate is greater than the second heating rate, the first heating rate is 30 ℃/min, and the second heating rate is 20 ℃/min.
Preferably, when the temperature is raised to 800 ℃ in a hydrogen atmosphere, the hydrogen is at a flow rate of 70sccm; when annealing is performed for 0.5h in the mixed gas atmosphere, the flow rate of the mixed gas is 60sccm; when the atmosphere of argon was cooled to room temperature, the flow rate of argon was 30sccm.
The invention also provides the graphene quantum dot doped with the nitrogen atoms, the nitrogen doping amount of the obtained graphene quantum dot is 18%, the fluorescence quantum yield is 19.3%, the surface polarity and conductivity of the graphene quantum dot are enhanced, and the graphene quantum dot can be applied to a miniature super capacitor.
The invention has the following beneficial effects:
(1) According to the invention, the nitrogen-doped carbon nano tube/nitrogen-doped graphene three-dimensional hybrid material taking nickel foam as a substrate is used as a precursor, and the reaction is carried out in a double-electrode system taking ammonia solution as electrolyte, so that graphene quantum dots with high nitrogen doping amount (18%) and high fluorescence quantum yield (19.3%) are obtained, the surface polarity and conductivity of the graphene quantum dots are greatly enhanced, and the graphene quantum dots can be applied to miniature super capacitors.
(5) According to the method, the concentration of ammonia water is controlled to electrochemically shear the ammonia water, so that the nitrogen-doped graphene quantum dot is prepared, and the precursor has a unique three-dimensional structure, so that the graphene sheet is not easy to stack, the electrochemical shearing process and the stripping process of the nitrogen-doped graphene quantum dot are facilitated, the formation of the carbon quantum dot is effectively prevented, and the obtained nitrogen-doped graphene quantum dot is ensured to have higher purity.
Drawings
Fig. 1 is a TEM image of a nitrogen atom doped graphene quantum dot prepared in example 2 of the present invention;
FIG. 2 is a Raman spectrum of a nitrogen atom doped graphene quantum dot prepared in example 2 of the present invention, wherein three characteristic peaks, D, G and 2D, are respectively located at 1340cm -1 、1580cm -1 And 2700cm -1 The D peak represents a defect of the carbon atom crystal, and the G peak represents an in-plane stretching vibration of sp2 hybridization of the carbon atom.
Detailed Description
In order to further understand the present invention, the following describes a preparation method of the graphene quantum dot doped with nitrogen atoms according to the present invention with reference to examples.
The methods described in the examples below, unless otherwise specified, are all conventional; the materials are commercially available in practice, unless otherwise specified.
Example 1:
(1) Preparation of a nitrogen-doped carbon nano tube/nitrogen-doped graphene three-dimensional hybrid material: 2g of nickel foam is cleaned and dried, then mixed with 2g of melamine and placed into a quartz boat, and placed into a central heating area of a constant-temperature tube furnace; at normal pressure, 70sccm of hydrogen is introduced, the temperature of the tube furnace is increased to 600 ℃ at 30 ℃/min, and then is increased to 800 ℃ at 20 ℃/min; maintaining 800 ℃ of the tube furnace, simultaneously introducing 50sccm argon, adjusting the flow of the hydrogen to 10sccm, annealing for 30min under the mixed gas atmosphere of the argon and the hydrogen, stopping introducing the hydrogen, and finally cooling the tube furnace to room temperature under the 30sccm argon atmosphere to obtain the nitrogen-doped carbon nano tube/nitrogen-doped graphene three-dimensional hybrid material taking nickel foam as a substrate, wherein the nitrogen-doped carbon nano tube/nitrogen-doped graphene three-dimensional hybrid material is used as a precursor.
(2) Preparing a graphene quantum dot doped with nitrogen atoms: the prepared precursor is placed in a double-electrode system with 0.1mol/L ammonia solution as electrolyte, the precursor is used as a working electrode, and the area is 15mm 2 Is used as a counter electrode, and the distance between the two electrodesThe distance is 2cm, the current is set to be 0.01A, the voltage is kept between 5 and 10V, the reaction is carried out for 8 hours, after the reaction is finished, the reaction solution is filtered, and the graphene quantum dot doped with nitrogen atoms is obtained after rotary evaporation.
Example 2:
(1) Preparation of a nitrogen-doped carbon nano tube/nitrogen-doped graphene three-dimensional hybrid material: after cleaning and drying 1g of nickel foam, mixing with 5g of melamine, putting into a quartz boat, and placing into a central heating area of a constant-temperature tubular furnace; at normal pressure, 70sccm of hydrogen is introduced, the temperature of the tube furnace is increased to 600 ℃ at 30 ℃/min, and then is increased to 800 ℃ at 20 ℃/min; maintaining 800 ℃ of the tube furnace, simultaneously introducing 50sccm argon, adjusting the flow of the hydrogen to 10sccm, annealing for 30min under the mixed gas atmosphere of the argon and the hydrogen, stopping introducing the hydrogen, and finally cooling the tube furnace to room temperature under the 30sccm argon atmosphere to obtain the nitrogen-doped carbon nano tube/nitrogen-doped graphene three-dimensional hybrid material taking nickel foam as a substrate, wherein the nitrogen-doped carbon nano tube/nitrogen-doped graphene three-dimensional hybrid material is used as a precursor.
(2) Preparing a graphene quantum dot doped with nitrogen atoms: the prepared precursor is placed in a double-electrode system with 0.2mol/L ammonia solution as electrolyte, the precursor is used as a working electrode, and the area is 15mm 2 The platinum sheet is used as a counter electrode, the distance between the two electrodes is 2cm, the current is set to be 0.01A, the voltage is kept between 5 and 10V, the reaction is carried out for 8 hours, after the reaction is finished, the reaction solution is filtered, and the graphene quantum dot with 18% nitrogen doping amount and 19.3% fluorescence quantum yield is obtained after rotary evaporation.
TEM image of the prepared nitrogen atom doped graphene quantum dot is shown in figure 1; and a Raman spectrum diagram of the prepared nitrogen atom doped graphene quantum dot is shown in figure 2.
Example 3:
(1) Preparation of a nitrogen-doped carbon nano tube/nitrogen-doped graphene three-dimensional hybrid material: after cleaning and drying 1g of nickel foam, mixing the nickel foam with 3g of melamine, putting the mixture into a quartz boat, and putting the quartz boat into a central heating area of a constant-temperature tubular furnace; at normal pressure, 70sccm of hydrogen is introduced, the temperature of the tube furnace is increased to 600 ℃ at 30 ℃/min, and then is increased to 800 ℃ at 20 ℃/min; maintaining 800 ℃ of the tube furnace, simultaneously introducing 50sccm argon, adjusting the flow of the hydrogen to 10sccm, annealing for 30min under the mixed gas atmosphere of the argon and the hydrogen, stopping introducing the hydrogen, and finally cooling the tube furnace to room temperature under the 30sccm argon atmosphere to obtain the nitrogen-doped carbon nano tube/nitrogen-doped graphene three-dimensional hybrid material taking nickel foam as a substrate, wherein the nitrogen-doped carbon nano tube/nitrogen-doped graphene three-dimensional hybrid material is used as a precursor.
(2) Preparing a graphene quantum dot doped with nitrogen atoms: the prepared precursor is placed in a double-electrode system with 0.3mol/L ammonia solution as electrolyte, the precursor is used as a working electrode, and the area is 15mm 2 The platinum sheet is used as a counter electrode, the distance between the two electrodes is 4cm, the current is set to be 0.01A, the voltage is kept between 5 and 10V, the reaction is carried out for 4 hours, after the reaction is finished, the reaction solution is filtered, and the graphene quantum dot doped with nitrogen atoms is obtained after rotary evaporation.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.
Claims (7)
1. The preparation method of the nitrogen atom doped graphene quantum dot is characterized by comprising the following steps of:
(1) Preparing a nitrogen-doped carbon nano tube/nitrogen-doped graphene three-dimensional hybrid material taking nickel foam as a substrate, and taking the nitrogen-doped carbon nano tube/nitrogen-doped graphene three-dimensional hybrid material as a precursor;
(2) Placing the precursor prepared in the step (1) into a double-electrode system with 0.1-0.3 mol/L ammonia solution as electrolyte, wherein the current is 0.01A, the reaction time is 4-8 h, the precursor is used as a working electrode, and a platinum sheet is used as a counter electrode;
(3) After the reaction is finished, filtering the reaction solution, and performing rotary evaporation to obtain the graphene quantum dot doped with nitrogen atoms;
the specific process of the step (1) is as follows: nickel foam was combined with melamine at 1:5, placing the mixed materials on a quartz boat after mixing in a mass ratio, placing the quartz boat in a tube furnace, heating to 800 ℃ in a hydrogen atmosphere, maintaining 800 ℃ and annealing for 0.5h in a mixed gas atmosphere, and finally cooling to room temperature in an argon atmosphere, wherein the mixed gas comprises argon and hydrogen in a volume ratio of 5:1.
2. The method according to claim 1, wherein the voltage of the two-electrode system in the step (2) is 5 to 10V, and the distance between the working electrode and the counter electrode is 2 to 4cm.
3. The method according to claim 1, wherein the ammonia solution in step (2) has a concentration of 0.2mol/L, the reaction time is 8 hours, and the platinum sheet has an area of 15mm 2 。
4. The method of claim 1, wherein the nickel foam is further washed and dried prior to mixing.
5. The method of claim 1, wherein the tube furnace is heated to 600 ℃ at a first heating rate and then to 800 ℃ at a second heating rate, the first heating rate being greater than the second heating rate, the first heating rate being 30 ℃/min and the second heating rate being 20 ℃/min.
6. The method according to claim 1, wherein the hydrogen gas is at a flow rate of 70sccm when the temperature is raised to 800 ℃ in a hydrogen gas atmosphere; when annealing is performed for 0.5h in the mixed gas atmosphere, the flow rate of the mixed gas is 60sccm; when the atmosphere of argon was cooled to room temperature, the flow rate of argon was 30sccm.
7. A graphene quantum dot doped with nitrogen atoms, wherein the graphene quantum dot doped with nitrogen atoms is obtained by the preparation method of the graphene quantum dot doped with nitrogen atoms according to any one of claims 1 to 3, and the obtained graphene quantum dot has a nitrogen doping amount of 18% and a fluorescence quantum yield of 19.3%.
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| CN108037171A (en) * | 2017-12-26 | 2018-05-15 | 南京师范大学 | The preparation method and application of the nitrogen-doped graphene quantum dot of high dispersive in a kind of water phase |
| CN110015653A (en) * | 2019-04-23 | 2019-07-16 | 重庆文理学院 | A kind of preparation method of carbon nanotube foam |
| US20200381717A1 (en) * | 2017-12-18 | 2020-12-03 | Daegu Gyeongbuk Institute Of Science And Technology | Lto negative electrode material, having graphene quantum dot doped with nitrogen attached thereto, with excellent rate characteristics and no gas generation during long term charge and discharge |
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| US20200381717A1 (en) * | 2017-12-18 | 2020-12-03 | Daegu Gyeongbuk Institute Of Science And Technology | Lto negative electrode material, having graphene quantum dot doped with nitrogen attached thereto, with excellent rate characteristics and no gas generation during long term charge and discharge |
| CN108037171A (en) * | 2017-12-26 | 2018-05-15 | 南京师范大学 | The preparation method and application of the nitrogen-doped graphene quantum dot of high dispersive in a kind of water phase |
| CN110015653A (en) * | 2019-04-23 | 2019-07-16 | 重庆文理学院 | A kind of preparation method of carbon nanotube foam |
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