CN113146015B - Alloy method of high-voltage silicon stack alloy processing device - Google Patents
Alloy method of high-voltage silicon stack alloy processing device Download PDFInfo
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- CN113146015B CN113146015B CN202110513073.0A CN202110513073A CN113146015B CN 113146015 B CN113146015 B CN 113146015B CN 202110513073 A CN202110513073 A CN 202110513073A CN 113146015 B CN113146015 B CN 113146015B
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- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 36
- 239000000956 alloy Substances 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000012545 processing Methods 0.000 title claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 16
- 239000010703 silicon Substances 0.000 title claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims abstract description 31
- 238000012544 monitoring process Methods 0.000 claims abstract description 15
- 238000005275 alloying Methods 0.000 claims abstract description 11
- 238000004891 communication Methods 0.000 claims abstract description 6
- 235000012431 wafers Nutrition 0.000 claims abstract description 6
- 238000003466 welding Methods 0.000 claims abstract description 6
- 238000001816 cooling Methods 0.000 claims description 9
- 238000003825 pressing Methods 0.000 abstract description 10
- 238000005476 soldering Methods 0.000 abstract description 10
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000001934 delay Effects 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 description 7
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
- B23K20/023—Thermo-compression bonding
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Die Bonding (AREA)
Abstract
A processing device and an alloying method for high-voltage silicon stack alloy. Relates to the technical field of semiconductor processing, in particular to a processing device and an alloy method for high-voltage silicon stack alloy. The device comprises a workpiece, an annular electromagnetic heating device, a workpiece thickness monitoring unit, a pressure unit, a temperature sensor and a controller; the workpiece is formed by alternately stacking a plurality of wafers and a plurality of welding chips; the workpiece is placed inside the annular electromagnetic heating device; the pressure unit comprises an air source and an air cylinder, the air source is communicated with the air cylinder through an air supply pipeline, and an electromagnetic valve is further arranged on the air supply pipeline; the annular electromagnetic heating device, the workpiece thickness monitoring unit, the temperature sensor, the air cylinder and the electromagnetic valve are all in communication connection with the controller. The invention improves the strength of the soldering lug, delays the pressing process, and ensures that the soldering lug in the alloy has uniform thickness and regular shape.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to a processing device and an alloy method for high-voltage silicon stack alloy.
Background
The high-voltage silicon stack diode is manufactured by alternately stacking a plurality of layers of wafers and a plurality of layers of welding materials (soldering lugs), heating and pressurizing to form an integrated alloy block, and cutting the alloy block into a plurality of unit silicon columns.
In alloy manufacture, a high-frequency alloying machine which adopts compressed air as a power cylinder to provide pressure for a workpiece is commonly adopted at present. And heating to the liquidus temperature of the solder in the pressurizing process, so that a plurality of wafers are bonded and connected through the solder, and the aim of alloy operation is fulfilled. However, in the alloy method, the compressed air connected with the cylinder is continuously opened, and the pressure output to the cylinder of the alloy machine by the air supply pipeline connected with the cylinder is not stable, and the fluctuation can occur due to the interference of other access equipment. Such supply fluctuations may cause the pressure of the cylinder piston cylinder to be negligible and the effect of the variation in pressurization to be insignificant before the solder is heated to the liquidus temperature; however, after the solder is heated to the liquidus temperature, the workpiece is over-pressed due to sudden increase of air pressure, the solder overflows, and the bonding area is too thin, so that the whole alloy workpiece is scrapped, and the raw material loss is huge.
Therefore, how to control the pressure when the solder is heated to the liquidus temperature, so as to avoid the overpressure of the workpiece, is a technical problem to be solved.
Disclosure of Invention
Aiming at the problems, the invention provides a processing device and an alloy method for high-voltage silicon stack alloy, which have the advantages of linear depressurization and accurate control and can effectively avoid workpiece overpressure.
The technical scheme of the invention is as follows:
the processing device of the high-voltage silicon stack alloy comprises a workpiece, an annular electromagnetic heating device, a workpiece thickness monitoring unit, a pressure unit, a temperature sensor and a controller;
the workpiece is formed by alternately stacking a plurality of wafers and a plurality of welding chips; the workpiece is placed inside the annular electromagnetic heating device;
the pressure unit comprises an air source and an air cylinder, the air source is communicated with the air cylinder through an air supply pipeline, and an electromagnetic valve is further arranged on the air supply pipeline;
the upper surface and the lower surface of the workpiece are respectively provided with a lining plate, and the bottom end of a piston rod of the air cylinder is abutted against the top surface of the lining plate on the upper surface of the workpiece; the temperature sensor is arranged on the surface of the lining plate, which is close to the workpiece, or is arranged in the annular electromagnetic heating device and is used for detecting the temperature of the workpiece;
the annular electromagnetic heating device, the workpiece thickness monitoring unit, the temperature sensor, the air cylinder and the electromagnetic valve are all in communication connection with the controller.
The cold source is provided with an air outlet, the air outlet faces the side face of the workpiece or the surface of the lining plate, and the cold source is in communication connection with the controller.
An alloying method by using a processing device of high-voltage silicon stack alloy,
the method comprises the following steps:
1) Stacking the workpieces with required layers, and placing the workpieces into the annular electromagnetic heating device;
2) Starting the processing device, heating the workpiece by the annular electromagnetic heating device, and simultaneously starting to press the workpiece by the cylinder of the pressure unit;
3) When the temperature sensor detects that the temperature of the workpiece reaches the work levelOperating temperature T Worker's work When the temperature is maintained and a signal is fed to the controller, the controller cuts off the electromagnetic valve and closes the compressed air input of the air cylinder;
4) The cylinder utilizes the residual compressed air in the cylinder to carry out the linear depressurization of the workpiece, monitors the thickness of the workpiece in the depressurization process:
4.1 When d) Worker's work ≥d Order of (A) At +β, maintaining the workpiece temperature; measuring cut-off of solenoid valve d Worker's work =d Order of (A) The time of +β is t;
if t > t 0 Heating the workpiece, and entering a step 4.2;
if t is less than or equal to t 0 Cooling the workpiece, and entering step 4.2;
4.2 When the workpiece thickness monitoring unit detects d Worker's work =d Order of (A) +When the workpiece temperature is maintained, the step 4.3 is carried out;
4.3 When the workpiece thickness monitoring unit detects d Worker's work =d Order of (A) When the alloy processing device is used, a signal is fed to the controller, the controller stops the action of the air cylinder, and the alloy processing of the workpiece is completed;
wherein d Worker's work For the thickness of the workpiece d Order of (A) Beta is positive near d for the target alloy thickness Order of (A) Sensitive thickness range, t 0 To cut off the solenoid valve to a critical time for the workpiece to enter a sensitive thickness range.
The working temperature T Worker's work Is located between the solidus temperature and the liquidus temperature of the lug.
According to the processing device for the high-voltage silicon stack alloy, the electromagnetic valve is arranged on the air supply pipeline to conduct intermittent connection of compressed air, so that the air cylinder can isolate air pressure fluctuation influence caused by unstable air source when the temperature of a liquidus line of a soldering lug is close to the air cylinder, the air pressure in the air cylinder is linearly reduced along with descending of the piston rod, and the piston rod is stable and flexible in pressing action in a thickness sensitive stage of a workpiece, so that the workpiece is effectively prevented from being over-pressed.
According to the alloy method, through signal feeding of the temperature and thickness sensing elements, accurate control of a thickness sensing stage of a workpiece is achieved. Specifically, when the workpiece is pressed and deformed too slowly in the pressing process, the heating is supplemented, the strength of the soldering lug is reduced, and the pressing process is accelerated. When the workpiece is pressed and deformed too fast in the pressurizing process, a cold source is inserted for cooling, so that the strength of the soldering lug is improved, and the pressing process is delayed. And finally, the alloy block is stably molded under proper pressure and temperature, so that the soldering lug in the alloy is ensured to have uniform thickness and regular shape.
Drawings
Figure 1 is a schematic view of the structure of the present invention,
FIG. 2 is a logic block diagram of the alloying method of the present invention.
In the figure: 1-a workpiece; 2-a ring-shaped electromagnetic heating device; 31-air source, 32-electromagnetic valve, 33-cylinder, 331-piston rod; 4-a temperature sensor; 5-a cold source; 6-lining board.
Detailed Description
The invention is further described below with reference to fig. 1-2.
The invention relates to a processing device of high-voltage silicon stack alloy, which comprises a workpiece 1, an annular electromagnetic heating device 2, a workpiece thickness monitoring unit, a pressure unit, a temperature sensor 4 and a controller, wherein the pressure unit is connected with the annular electromagnetic heating device;
the workpiece 1 is formed by alternately stacking a plurality of wafers and a plurality of soldering lugs; the workpiece 1 is placed inside the annular electromagnetic heating device 2;
the pressure unit comprises an air source 31 and an air cylinder 33, the air source 31 is communicated with the air cylinder 33 through an air supply pipeline, an electromagnetic valve 32 is further arranged on the air supply pipeline, and the electromagnetic valve 32 is used for controlling the opening and closing of the air supply channel;
the upper surface and the lower surface of the workpiece 1 are respectively provided with a lining plate 6 for uniformly dispersing the pressure of the air cylinder 33, and the bottom end of a piston rod 331 of the air cylinder 33 is abutted against the top surface of the lining plate 6 on the upper surface of the workpiece 1; the temperature sensor 4 is arranged on the surface of the lining plate 6 close to the workpiece 1 or inside the annular electromagnetic heating device 2 and is used for detecting the temperature of the workpiece 1;
the annular electromagnetic heating device 2, the workpiece thickness monitoring unit, the temperature sensor 4, the air cylinder 33 and the electromagnetic valve 32 are all in communication connection with the controller.
The cooling device further comprises a cooling source 5, the cooling source 5 is arranged at the bottom of the workpiece 1, the cooling source 5 is provided with an air outlet, the air outlet faces the side face of the workpiece 1 or the surface of the lining plate 6, and the cooling source 5 is in communication connection with the controller. The cold source 5 is used for cooling the workpiece 1, properly improving the strength of the welding lug and slowing down the pressing speed, and avoiding bubbles from being generated due to the fact that gas in the welding lug does not escape when the piston rod 331 is pressed down too fast.
An alloying method by using a processing device of high-voltage silicon stack alloy,
the method comprises the following steps:
1) Stacking the workpieces 1 with required layers and placing the workpieces into the annular electromagnetic heating device 2;
2) Starting the processing device, heating the workpiece 1 by the annular electromagnetic heating device 2, simultaneously starting to press the workpiece 1 by the air cylinder 33 of the pressure unit, switching on the electromagnetic valve 32, and continuously inputting compressed air into the air cylinder 33 by the air supply pipeline;
3) When the temperature sensor 4 detects that the temperature of the workpiece 1 reaches the working temperature T Worker's work When this temperature is maintained and a signal is fed to the controller which shuts off the solenoid valve 32, closing the compressed air input to the cylinder 33;
4) The cylinder 33 linearly depressurizes the work 1 by using the residual compressed air in the cylinder; when the gas quantity n, the gas constant R and the gas temperature T are all constants according to the ideal gas law pv=nrt, the piston rod 331 descends, and the cylinder volume V increases linearly, so that the gas pressure P in the cylinder 33 decreases linearly;
monitoring the thickness of the workpiece 1 during the pressing:
4.1 When d) Worker's work ≥d Order of (A) At +β, maintaining the temperature of the workpiece 1; measuring cut-off solenoid valves 32 to d Worker's work =d Order of (A) The time of +β is t;
if t > t 0 At the moment, the pressing process is too slow, the temperature of the workpiece 1 needs to be raised, the deformability of the soldering lug is improved, and the step 4.2 is performed;
if t is less than or equal to t 0 At the moment, the pressing process is too fast, the workpiece 1 needs to be cooled, the deformability of the soldering lug is reduced, and bubbles generated in the solder during the too fast pressing are prevented from enteringStep 4.2;
4.2 When the workpiece thickness monitoring unit detects d Worker's work =d Order of (A) +When the temperature of the workpiece 1 is maintained, the step 4.3 is carried out;
4.3 When the workpiece thickness monitoring unit detects d Worker's work =d Order of (A) When the alloy is processed, a signal is fed to the controller, the controller stops the action of the air cylinder 33, and the alloy of the workpiece 1 is processed;
wherein d Worker's work For the thickness of the workpiece d Order of (A) Beta is positive near d for the target alloy thickness Order of (A) Sensitive thickness range, t 0 To cut off the solenoid valve to a critical time for the workpiece to enter a sensitive thickness range.
Operating temperature T Worker's work Between the solidus and liquidus temperatures of the lug.
For the purposes of this disclosure, the following points are also described:
(1) The drawings of the embodiments disclosed in the present application relate only to the structures related to the embodiments disclosed in the present application, and other structures can refer to common designs;
(2) The embodiments disclosed herein and features of the embodiments may be combined with each other to arrive at new embodiments without conflict;
the foregoing is merely illustrative of specific embodiments disclosed herein, but the scope of the disclosure is not limited thereto, and variations of certain features should be made by those skilled in the art in light of the disclosure herein.
Claims (3)
1. An alloying method of a high-voltage silicon stack alloying device comprises a workpiece, an annular electromagnetic heating device, a workpiece thickness monitoring unit, a pressure unit, a temperature sensor and a controller;
the workpiece is formed by alternately stacking a plurality of wafers and a plurality of welding chips; the workpiece is placed inside the annular electromagnetic heating device;
the pressure unit comprises an air source and an air cylinder, the air source is communicated with the air cylinder through an air supply pipeline, and an electromagnetic valve is further arranged on the air supply pipeline;
the upper surface and the lower surface of the workpiece are respectively provided with a lining plate, and the bottom end of a piston rod of the air cylinder is abutted against the top surface of the lining plate on the upper surface of the workpiece; the temperature sensor is arranged on the surface of the lining plate, which is close to the workpiece, or is arranged in the annular electromagnetic heating device and is used for detecting the temperature of the workpiece;
the annular electromagnetic heating device, the workpiece thickness monitoring unit, the temperature sensor, the air cylinder and the electromagnetic valve are all in communication connection with the controller;
the alloy method is characterized by comprising the following steps:
1) Stacking the workpieces with required layers, and placing the workpieces into the annular electromagnetic heating device;
2) Starting the processing device, heating the workpiece by the annular electromagnetic heating device, and simultaneously starting to press the workpiece by the cylinder of the pressure unit;
3) When the temperature sensor detects that the temperature of the workpiece reaches the working temperature T Worker's work When the temperature is maintained and a signal is fed to the controller, the controller cuts off the electromagnetic valve and closes the compressed air input of the air cylinder;
4) The cylinder utilizes the residual compressed air in the cylinder to carry out the linear depressurization of the workpiece, monitors the thickness of the workpiece in the depressurization process:
4.1 When d) Worker's work ≥d Order of (A) At +β, maintaining the workpiece temperature; measuring cut-off of solenoid valve d Worker's work =d Order of (A) The time of +β is t;
if t > t 0 Heating the workpiece, and entering a step 4.2;
if t is less than or equal to t 0 Cooling the workpiece, and entering step 4.2;
4.2 When the workpiece thickness monitoring unit detects d Worker's work =d Order of (A) +When the workpiece temperature is maintained, the step 4.3 is carried out;
4.3) When the workpiece thickness monitoring unit detects d Worker's work =d Order of (A) When the alloy processing device is used, a signal is fed to the controller, the controller stops the action of the air cylinder, and the alloy processing of the workpiece is completed;
wherein d Worker's work For the thickness of the workpiece d Order of (A) Beta is positive near d for the target alloy thickness Order of (A) Sensitive thickness range, t 0 To cut off the solenoid valve to a critical time for the workpiece to enter a sensitive thickness range.
2. The alloying method of a high voltage silicon stack alloying device of claim 1, further comprising a cold source, said cold source having an air outlet, said air outlet being oriented toward a side of said workpiece or a surface of a liner, said cold source being communicatively coupled to said controller.
3. The alloying method of a high-voltage silicon stack alloying device according to claim 1, wherein said operating temperature T Worker's work Is located between the solidus temperature and the liquidus temperature of the lug.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202110513073.0A CN113146015B (en) | 2021-05-11 | 2021-05-11 | Alloy method of high-voltage silicon stack alloy processing device |
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| CN202110513073.0A CN113146015B (en) | 2021-05-11 | 2021-05-11 | Alloy method of high-voltage silicon stack alloy processing device |
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| CN113146015A CN113146015A (en) | 2021-07-23 |
| CN113146015B true CN113146015B (en) | 2023-10-24 |
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| US6793831B1 (en) * | 1998-08-06 | 2004-09-21 | State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University | Microlamination method for making devices |
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| JP2012175046A (en) * | 2011-02-24 | 2012-09-10 | Sumitomo Electric Ind Ltd | Heater unit for semiconductor manufacturing device |
| CN108290243A (en) * | 2015-12-03 | 2018-07-17 | 本田技研工业株式会社 | The joint method of steel and the engagement device of steel |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20200176414A1 (en) * | 2018-12-03 | 2020-06-04 | Jtekt Corporation | Joint device and control method for joint device |
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- 2021-05-11 CN CN202110513073.0A patent/CN113146015B/en active Active
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|---|---|---|---|---|
| US6793831B1 (en) * | 1998-08-06 | 2004-09-21 | State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University | Microlamination method for making devices |
| CN201181713Y (en) * | 2008-04-30 | 2009-01-14 | 晶能光电（江西）有限公司 | Flip-chip bonding structure of indium gallium aluminum nitrogen epitaxial wafer |
| CN101859715A (en) * | 2010-05-19 | 2010-10-13 | 南通皋鑫电子股份有限公司 | Heating technique for silicon wafer lamination alloying |
| JP2012175046A (en) * | 2011-02-24 | 2012-09-10 | Sumitomo Electric Ind Ltd | Heater unit for semiconductor manufacturing device |
| CN102489806A (en) * | 2011-11-16 | 2012-06-13 | 扬州扬杰电子科技股份有限公司 | Welding process for diode of high-voltage silicon rectifier stack |
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Effective date of registration: 20240508 Address after: 272499 Factory Building 5, Science and Technology Innovation Park, Wanzhang High speed Railway Industrial Park, Jiaxiang Economic Development Zone, Jiaxiang County, Jining City, Shandong Province Patentee after: Jining Ruixin Semiconductor Co.,Ltd. Country or region after: China Address before: 225008 phase III of Jiangyang Pioneer Park, pingshantang North Road, Hanjiang District, Yangzhou City, Jiangsu Province Patentee before: YANGZHOU YANGJIE ELECTRONIC TECHNOLOGY Co.,Ltd. Country or region before: China |