CN113140663B

CN113140663B - LED light-emitting element and manufacturing method thereof

Info

Publication number: CN113140663B
Application number: CN202110421085.0A
Authority: CN
Inventors: 姚禹; 郑远志; 康建; 陈向东
Original assignee: Maanshan Jiesheng Semiconductor Co ltd
Current assignee: Maanshan Jiesheng Semiconductor Co ltd
Priority date: 2021-04-19
Filing date: 2021-04-19
Publication date: 2022-10-21
Anticipated expiration: 2041-04-19
Also published as: CN113140663A

Abstract

The invention provides an LED light-emitting element and a manufacturing method thereof, comprising at least one composition unit, wherein the composition unit comprises: the LED lamp comprises a support, a box dam, an optical lens and an LED chip, wherein the lower end of the box dam is installed on the support, the optical lens is installed at the upper end of the box dam, the support, the box dam and the optical lens are enclosed to form a closed cavity, and the LED chip is located in the closed cavity; the LED chip is provided with an anode, a cathode and a light-emitting surface, the support is provided with a first bonding pad connected with the anode and a second bonding pad connected with the cathode, and the light-emitting surface of the LED chip is in contact with the optical lens. The LED light-emitting element can reduce interface reflection, improve light-emitting efficiency and improve the heat dissipation and heat conduction effects of the light-emitting element.

Description

LED light-emitting element and manufacturing method thereof

Technical Field

The invention relates to an LED light-emitting element and a manufacturing method thereof, belonging to the technical field of semiconductors.

Background

Ultraviolet light can be generally divided into: UVA (320-400 nm), UVB (280-320 nm), UVC (200-280 nm) and vacuum ultraviolet VUV (10-200 nm). Ultraviolet LEDs (UV LEDs) based on III-nitride materials have wide application prospects in the fields of sterilization, disinfection, polymer curing, biochemical detection, non-line-of-sight communication, special illumination and the like, compared with traditional ultraviolet light source mercury lamps, the UV LEDs have the advantages of environmental protection, small size, portability, low power consumption, low voltage and the like, and are paid more and more attention in recent years.

The ultraviolet light has a short propagation distance in the air and is easily absorbed by other materials, so that in the packaging process of the deep ultraviolet LED chip, the ultraviolet light is prevented from being shielded and absorbed by improper packaging materials or packaging structures, and the luminous efficiency is ensured. Traditional LED chip adopts encapsulating encapsulation, however, the glue of organic material can produce strong absorption to the ultraviolet ray that ultraviolet LED chip sent, and the ultraviolet ray also can destroy the molecular structure of organic glue to cause packaging structure inefficacy. In the prior art, the following structure is generally adopted to package an LED chip: a support is provided as a substrate 000, a dam 300 is installed on the substrate 000, the dam 300 encloses a cavity with an upward opening on the substrate 000 (the bottom surface of the cavity is the substrate), an optical lens 200 is installed on the upper end of the dam 300 to cover the opening, so that the cavity becomes a sealed cavity, the LED chip 100 is located in the sealed cavity and is welded on the substrate 000, the bottom of the substrate 000 is generally provided with a pin 002, the package structure has a certain mechanical strength and can protect the LED chip, but the structure has obvious optical defects, specifically, light emitted from the inside of the LED chip (for example, ultraviolet light emitted from an ultraviolet LED) needs to pass through the inside of the LED chip-air-lens lower surface-lens upper surface-air, and the ultraviolet light needs to pass through a large number of interfaces, because the refractive index difference of materials on two sides of the interfaces is too large (especially, the chip-air interface, the chip and the air are respectively on two sides of the chip and the air), most of the light is easily reflected back to the sealed cavity and cannot be emitted, and the light emitting efficiency is poor.

In addition, the current LED (especially, ultraviolet LED) has low photoelectric conversion efficiency, most of its electric power is converted into heat, and the generation of a large amount of heat is also not beneficial to the working performance of the LED chip, although the packaging material (such as ceramic material) with excellent heat conductivity coefficient can be selected as the manufacturing material of the bracket, the heat generated by the LED chip is dissipated from the bracket to a certain extent, however, the side surface and the top surface of the LED chip are both directly contacted with air, which is not beneficial to heat conduction, and therefore, the heat dissipation performance of the existing LED chip is still to be further improved.

In view of the above, it is an urgent technical problem in the art to improve the light emitting efficiency and the heat dissipation performance of the LED light emitting device.

Disclosure of Invention

The invention provides an LED light-emitting element and a manufacturing method thereof, which at least solve the defects of poor light-emitting efficiency, poor heat dissipation performance and the like of the LED light-emitting element in the prior art.

In one aspect of the present invention, there is provided an LED light emitting element including at least one constituent unit, the constituent unit including: the LED light source comprises a support, a box dam, an optical lens and an LED chip, wherein the lower end of the box dam is installed on the support, the optical lens is installed at the upper end of the box dam, the support, the box dam and the optical lens are enclosed to form an enclosed cavity, and the LED chip is located in the enclosed cavity; the LED chip is provided with an anode, a cathode and a light-emitting surface, a first bonding pad connected with the anode and a second bonding pad connected with the cathode are arranged on the support, and the light-emitting surface of the LED chip is in contact with the optical lens.

According to an embodiment of the present invention, the optical lens includes a contact layer protruding toward the closed cavity, and a connection portion surrounding the contact layer, the connection portion being bonded to the upper end of the dam by an adhesive layer to enable the optical lens to be mounted on the upper end of the dam; the light emitting surface of the LED chip is in contact with the contact layer so as to realize that the light emitting surface of the LED chip is in contact with the optical lens.

According to one embodiment of the present invention, the light emitting surface of the LED chip is a flat surface, and the surface of the contact layer in contact with the light emitting surface is a flat surface (that is, the surface of the contact layer in contact with the light emitting surface has an area not smaller than the area of the light emitting surface.

According to one embodiment of the present invention, the contact layer is a portion protruding toward the sealed cavity, and the height of the protrusion, which is measured with respect to a surface of the connecting portion near the sealed cavity, is the thickness of the contact layer; the thickness of the contact layer is 3-20 μm.

According to an embodiment of the present invention, the material for forming the optical lens includes at least one of silicon oxide, aluminum oxide, titanium oxide, magnesium fluoride, calcium fluoride, lead sulfide, and quartz.

According to one embodiment of the present invention, the LED chip is a sapphire substrate; and/or one surface of the LED chip, which is far away from the support, is a light-emitting surface, and one surface of the LED chip, which is close to the support, is provided with a positive electrode and a negative electrode.

According to an embodiment of the present invention, at least one of the following conditions is satisfied: the forming material of the first bonding pad comprises at least one of aluminum, silver, gold, copper, tin, lead and platinum; the first welding disc is welded on the bracket; the anode of the LED chip is welded with the first bonding pad; the forming material of the second bonding pad comprises at least one of aluminum, silver, gold, copper, tin, lead and platinum; the second welding disc is welded on the bracket; and the cathode of the LED chip is welded with the second bonding pad.

According to an embodiment of the present invention, a zener diode (zener diode) is further included, which is disposed in parallel with the LED chip.

According to one embodiment of the invention, the first pad and the second pad are arranged on one surface of the bracket close to the closed cavity, and one surface of the bracket far away from the closed cavity is provided with a first pin connected with the first pad and a second pin connected with the second pad.

In another aspect of the present invention, a method for manufacturing the LED light emitting device includes: and (3) crystal solidification: welding a first bonding pad and a second bonding pad on a bracket with a dam, and enabling the first bonding pad and the second bonding pad to be positioned in a cavity formed by the dam on the bracket in a surrounding manner; wherein, the lower end of the box dam is arranged on the bracket; connecting the anode of the LED chip with the first bonding pad, connecting the cathode of the LED chip with the second bonding pad, and enabling the LED chip to be positioned in the cavity; assembling an optical lens: and installing an optical lens at the upper end of the box dam to enable the cavity to form a closed cavity, and enabling the optical lens to be in contact with the light emitting surface of the LED chip to obtain the LED light emitting element.

The implementation of the invention has at least the following beneficial effects:

according to the LED light-emitting element provided by the invention, the light-emitting surface of the LED chip is in contact (physical contact) with the optical lens, so that the transmission path of the light emitted by the LED chip and the interface formed by materials with different refractive indexes needing to pass through are reduced, particularly, the LED chip-air interface is avoided, the interface reflection is reduced, the light-emitting efficiency is improved, meanwhile, the light-emitting surface of the LED chip is in direct physical contact with the optical lens, the heat generated by the LED chip is favorably dissipated, the heat dissipation/heat conduction performance of the LED light-emitting element is improved, the quality of the LED light-emitting element, such as function exertion and service life, is further ensured, and the LED light-emitting element has important significance for practical industrial application.

Drawings

FIG. 1 is a schematic side view of a prior art LED light-emitting device;

fig. 2 is a schematic side view of an LED light-emitting device according to an embodiment of the invention;

FIG. 3 is a schematic structural diagram of an optical lens according to an embodiment of the invention; wherein, (a) is a side view of the optical lens parallel to the thickness direction thereof; (b) The (c) and (d) are respectively a plane schematic view of the optical lens with contact layers with different sizes;

FIG. 4 is a schematic side view of a structure after wax injection during a manufacturing process of an LED light-emitting device according to an embodiment of the invention;

FIG. 5 is a schematic side view of a structure after the light emitting surface of the LED chip is made equal to the upper end surface of the dam by grinding and polishing in the manufacturing process of the LED light emitting device according to an embodiment of the present invention;

FIG. 6 is a schematic side view of a structure after dewaxing and cleaning in a manufacturing process of an LED light-emitting device according to an embodiment of the invention;

fig. 7 is a flowchart of a manufacturing process of an LED light emitting device according to an embodiment of the invention.

Description of reference numerals:

000: support frame

001: first bonding pad

001': second bonding pad

002: a first pin;

002': second pin

003: a first conductive via

003': second conductive via

100: LED chip

101: a first welding part

101': second welding part

102: functional part

103: mounting part

200: optical lens

201: contact layer

202: connecting part

300: enclosure dam

400: closed cavity

401: wax

Detailed Description

In order that those skilled in the art will better understand the aspects of the present invention, the following detailed description is given with reference to the accompanying drawings.

As shown in fig. 2 to 6, the LED light emitting element of the present invention includes at least one constituent unit, each of which includes: the LED chip comprises a support (or a substrate) 000, a dam 300, an optical lens 200 and an LED chip 100, wherein the lower end of the dam 300 is installed on the support 000, the optical lens 200 is installed at the upper end of the dam 300, the support 000, the dam 300 and the optical lens 200 are enclosed to form a closed cavity 400, the LED chip 100 is located in the closed cavity 400, the LED chip 100 is provided with a positive electrode, a negative electrode and a light-emitting surface, and the light-emitting surface of the LED chip is in contact (physical contact) with the optical lens 200. The bracket is provided with a first bonding pad 001 connected with the first anode and a second bonding pad 001' connected with the first cathode.

Specifically, in the structure of the LED light emitting device, the dam 300 is mounted on the support 000 and surrounds the sealed cavity 400, which is equivalent to a frame of the sealed cavity 400, an upper portion of the sealed cavity 400 is covered and sealed by the optical lens 200, and a lower portion of the sealed cavity is sealed by the support 000, wherein the optical lens is specifically an optical glass lens.

In some embodiments, as shown in fig. 2, the material of the support 000 is preferably a material that facilitates heat dissipation, such as a ceramic material (i.e., the support is a ceramic support), the material of the dam 300 may be a ceramic material, a metal material or a non-metal material, etc., the material of the dam 300 may be the same as or different from that of the support 000, for example, the material of the support 000 is a ceramic material, and when the material of the dam 300 is the same as that of the support 000, the support with the dam 300 may be prepared by co-temperature sintering, etc., i.e., the support 000 and the dam 300 are integrally formed; alternatively, when the material constituting the dam 300 is a metal material, the dam 300 may be mounted on the bracket 000 by a plating, electroless plating process, or the like; alternatively, when the material constituting the dam 300 is a non-metal material, the dam 300 may be attached by bonding the dam 300 to the bracket 000 with an adhesive material.

In some embodiments, as shown in fig. 2, the optical lens 200 includes a contact layer 201 protruding toward the sealed cavity, and a connection portion 202 surrounding the contact layer, the connection portion 202 is bonded to the upper end of the dam 300 by an adhesive layer 203 to realize that the optical lens 200 is mounted on the upper end of the dam 300, and the light emitting surface of the LED chip 100 is in contact with the contact layer 201 to realize that the light emitting surface of the LED chip 100 is in contact with the optical lens 200. Through the structural design, the luminous efficiency and the heat dissipation performance of the LED luminous element are further improved, and the structural stability of the LED luminous element is facilitated.

In some embodiments, as shown in fig. 3 (a) of the side view of the optical lens of the present invention and fig. 3 (b) of the top view of the optical lens, the contact layer 201 is a partial region of the optical lens 200, and is used for contacting with the light emitting surface of the LED chip 100, in some embodiments, the light emitting surface of the LED chip 100 is a plane (i.e., a flat smooth surface), the surface of the contact layer 201 contacting with the light emitting surface is a plane (i.e., a flat smooth surface), the area of the surface of the contact layer 201 contacting with the light emitting surface is not less than the area of the light emitting surface, i.e., the projection of the contact layer 201 parallel to the light emitting surface covers the light emitting surface, as shown in fig. 3 (c) of the top view of the contact layer 201 relative to the optical lens 200, the top view of the contact layer 201 can completely cover the light emitting surface of the LED chip 100, so that the light emitting surface of the LED chip 100 is all contacted with the contact layer 201, thereby avoiding more interfaces between the light emitting surface and the optical lens 200, and further improving the light emitting efficiency and the heat dissipation performance. As shown in fig. 3 (d), the area size of the top view of the contact layer does not exceed the area size of the top view of the optical lens.

In some embodiments, as shown in fig. 2, the connection portion 202 of the optical lens is bonded to the upper end surface of the dam 300 by an adhesive layer 203, the contact layer 201 is a portion of the optical lens 200 protruding toward the sealed cavity 400, that is, the contact layer 201 is a portion of the optical lens 200 protruding toward the sealed cavity 400 relative to the connection portion 202, and the thickness of the contact layer 201 is a height of the protrusion, based on a surface of the connection portion 202 close to the sealed cavity 400, that is, a vertical distance from a surface of the contact layer 201 contacting with the light emitting surface to a surface of the connection portion 202 close to the sealed cavity 400. Under the above structural system, the thickness of the contact layer 201 is substantially equal to the thickness of the adhesive layer 203, i.e. the thickness of the contact layer 201 is in the range of 3 μm to 20 μm, such as 3 μm, 6 μm, 9 μm, 12 μm, 15 μm, 18 μm, 20 μm or any two thereof.

In some embodiments, as shown in fig. 2, an end surface of the dam 300 farthest from the support 000 is a plane (i.e., a flat smooth surface), a light emitting surface of the LED chip 100 is a plane, the end surface of the dam 300 farthest from the support 000 is on the same horizontal plane as the light emitting surface of the LED chip 100, that is, the end surface of the dam 300 farthest from the support 000 is equal to (flush with) the light emitting surface of the LED chip 100, taking the surface of the support 000 close to the sealed cavity 400 as a reference, which is beneficial to further improving characteristics of light emitting efficiency, heat dissipation performance and the like of the LED light emitting element, and is beneficial to manufacturing the LED light emitting element. Wherein the thickness of the adhesive layer 203 is substantially equal to the thickness of the contact layer 201.

In some embodiments, the material forming the optical lens 200 includes at least one of silicon oxide, aluminum oxide, titanium oxide, magnesium fluoride, calcium fluoride, lead sulfide, and quartz. The materials of the contact layer 201 and the connection portion 202 may be the same or different, and each may be selected from one or more combinations of silicon oxide, aluminum oxide, titanium oxide, magnesium fluoride, calcium fluoride, lead sulfide, and quartz, and are generally preferably the same.

In the present invention, the surface structure of the optical lens 200 away from the sealed cavity 400 may be a smooth surface, a photonic crystal structure or a roughened surface structure, such as a plane or a curved surface (e.g., a spherical surface), but is not limited thereto, and may also be other suitable structures.

In some embodiments, the LED chip 100 is a sapphire substrate, i.e., the LED chip 100 is a chip of a sapphire substrate. The LED chip 100 may have a flip-chip structure, in which one surface (referred to as a first surface) of the LED chip 100 away from the support 000 is a light-emitting surface, and one surface (referred to as a second surface) of the LED chip 100 close to the support 000 is provided with a positive electrode and a negative electrode, and the first surface and the second surface are opposite to each other. The LED chip may also be an ultraviolet LED chip based on a group iii nitride material.

In the present invention, the pads (first pad 001, second pad 001 ') may be made of a conductive metal material, in some embodiments, the first pad 001 is made of at least one of aluminum, silver, gold, copper, tin, lead, and platinum, and the second pad 001' is made of at least one of aluminum, silver, gold, copper, tin, lead, and platinum, which is beneficial to improve the light emitting efficiency of the LED chip 100. The pad generally has at least one metal layer, for example, one metal layer or two or more metal layers, and when the pad has at least two metal layers, the metal layers may be formed of the same or different materials.

The first pad 001 and the second pad 001' are electrically connected to the positive electrode and the negative electrode of the LED chip 100, respectively, and are disposed on the bracket 000 at intervals (i.e., the first pad 001 and the second pad 001' are not electrically connected to each other), in some embodiments, the first pad 001 is welded on the bracket, and the second pad 001' is welded on the bracket.

The electrodes (i.e., the positive electrode and the negative electrode) of the LED chip 100 are metal electrodes, and the connection manner between the metal electrodes and the bonding pads may specifically be welding, that is, the first positive electrode of the LED chip 100 is welded to the first bonding pad 001, and the first negative electrode of the LED chip 100 is welded to the second bonding pad. Specifically, the positive electrode and the first pad 001 may be welded together and the negative electrode and the second pad 001' may be welded together by using a metal solder, and taking a welding process of the positive electrode and the first pad 001 as an example, in the welding process, the metal solder is melted to connect the positive electrode and the first pad 001 together, and a first welding portion is formed between the positive electrode and the first pad 001 (similarly, a second welding portion is formed between the negative electrode and the second pad 001' by welding), that is, the positive electrode and the first pad 001 are connected by the first welding portion 101 formed by the metal solder, and the negative electrode and the second pad are connected by the second welding portion 101' formed by the metal solder, and the metal solder may be selected from tin paste, silver paste, gold-tin alloy, and the like.

As shown in fig. 2, the thicknesses of the first welding portion 101 and the second welding portion 101' are substantially the same, and taking the thickness of the first welding portion 101 as an example, the thickness of the first welding portion 101 is: the perpendicular distance from the portion of the first welding part 101 farthest from the third surface to the third surface is based on the surface (denoted as the third surface) of the bracket 000 near the sealed cavity 400. In some embodiments, the upper end of the dam 300 is at the same level as the light emitting surface of the LED chip 100, the thickness of the contact layer 201 is equal to the thickness of the adhesive layer 203 between the upper end surface of the dam 300 and the optical lens 200, and the light emitting surface of the LED chip 100 is in contact with the contact layer 201, and substantially satisfies the following relationship: h + n = G + m, H being the height of the LED chip 100, H being the height of the first soldering portion 101, n being the thickness of the contact layer 201, and m being the thickness of the adhesive layer 203; wherein, the height H of the LED chip 100 is: the perpendicular distance from the portion of the LED chip 100 farthest from the third surface to the third surface is based on the surface (third surface) of the support 000 near the sealed cavity 400.

Alternatively, as shown in fig. 2, the LED chip 100 includes a mounting portion 103 and a functional portion 102 having a light emitting surface, the mounting portion 103 is a protruding structure disposed below the functional portion 102, a bottom surface of the mounting portion 103 is in contact with a surface (a third surface) of the bracket 000 near the sealed cavity 400 and is mounted on the third surface, and a height H of the LED chip 100 is substantially equal to a sum of a height of the mounting portion 103 and a height of the functional portion 102 with respect to the third surface. Here, the first pad 001 and the second pad 001' may be located below the functional part 102 and at both sides of the mounting part 103, respectively.

In some embodiments, a voltage regulator diode (zener diode) is further included and is connected in parallel with the LED chip 100, which is beneficial to further improve the performance of the LED element, such as light emitting efficiency. The voltage stabilizing diode comprises a positive electrode (marked as a second positive electrode) and a negative electrode (marked as a second negative electrode), the second positive electrode is welded with the first bonding pad 001, and the second negative electrode is welded with the second bonding pad 001' to realize the parallel arrangement with the LED chip; alternatively, the zener diode may be located within the sealed cavity 400.

In some embodiments, the first pad 001 and the second pad 001' are disposed on a side (third side) of the support 000 close to the sealed cavity 400, and a side (referred to as a fourth side) of the support 000 away from the sealed cavity 400 has a first lead 002 connected to the first pad 001 and a second lead 002' connected to the second pad 001', and the third side and the fourth side are opposite to each other. Specifically, the first pin 002 and the second pin 002 'are mounted on the fourth surface of the bracket 000, the first pad 001 is connected to the first pin 002 through the first conductive via 003', the second pad 001 'is connected to the first pin 002' through the second conductive via 003', and the first pin 002 is different from the second pin 002'. The first conductive via 003 and the second conductive via 003 'are embedded in the frame 000 for carrying the first pad 001 and the second pad 001'.

As shown in fig. 4 to 7, the method for manufacturing an LED light emitting element of the present invention includes: and (3) crystal solidification: welding a first pad 001 and a second pad 001 'on the bracket 000 with the dam 300, and enabling the first pad 001 and the second pad 001' to be located in a cavity formed by the dam 300 on the bracket 000 in a surrounding mode; wherein the lower end of the box dam 300 is mounted on the bracket 000; connecting the anode of the LED chip 100 with the first bonding pad 001, connecting the cathode with the second bonding pad, and positioning the LED chip 100 in the cavity; glazing lens 200: the optical lens 200 is mounted on the upper end of the dam 300 to form a closed cavity 400, and the optical lens is in contact with the light emitting surface of the LED chip 100 to obtain an LED light emitting element.

In the die bonding process, the fixing of the LED chip on the support is completed, and in some embodiments, the die bonding process includes: the mount 000 is pre-coated with a metallic solder, and the anode of the LED chip 100 is aligned with the first pad 001 and the cathode is aligned with the second pad 001', and then soldering is performed such that the anode is connected to the first pad 001 through a first soldering portion 101 formed by soldering the metallic solder and the cathode is connected through a second soldering portion 101' formed by soldering the metallic solder.

After the die bonding is completed, a wax injection process may be generally included, which specifically includes: the wax 401 is melted into liquid state (i.e. wax liquid is formed) by heating, then the wax liquid is injected into a cavity surrounded by the surrounding dam on the bracket, so that the wax liquid fills the cavity and gaps such as gaps and cutting channels around the frame of the bracket 000, then a certain pressure is applied from top to bottom by a flat plate, the redundant wax liquid is extruded out and injected into the wax liquid surface in the cavity to be flattened, and then the wax liquid is naturally cooled to be solidified.

After wax injection, the method also comprises a grinding and polishing process, and specifically comprises the following steps: the dam 300 and the light emitting surface of the LED chip 100 are subjected to a grinding and polishing process using a grinder and a polisher so that the upper end of the dam 300 and the light emitting surface of the LED chip 100 are on the same horizontal plane, and in general, the initial height of the dam 300 is higher than the height of the LED chip 100, and the material constituting the dam 300 may be metal, ceramic, or the like, the LED chip 100 is a sapphire substrate, and the hardness of the dam 300 is lower than that of the LED chip 100. Therefore, when the dam 300 is ground and polished, a proper grinding and polishing material is needed, the hardness of the grinding and polishing material is between that of the dam material and that of the sapphire material, and at this time, only the part of the dam 300 higher than the LED chip 100 needs to be ground and polished, so that the part of the dam 300 higher than the LED chip 100 is removed, and the upper end of the dam 300 is flattened, that is, the upper end of the dam 300 is a plane, in specific implementation, the height difference between the dam 300 and the LED chip 100 can be measured in advance, and finally, the upper end of the dam 300 and the light emitting surface of the LED chip 100 are on the same horizontal plane by calculating and determining the process conditions of pressure, time and the like of grinding and polishing.

After grinding and polishing, the method also comprises dewaxing and cleaning, and specifically comprises the following steps: and cleaning the surrounding gaps of the cavity 400 of the box dam and the frame 000 of the bracket and the wax in the cutting path by using a dewaxing liquid or deionized water in the modes of soaking, heating, ultrasonic treatment and the like.

In some embodiments, the process of making an optical lens 200 with a contact layer includes method one, which is applicable when the contact layer material is different from the optical lens material, and method two and method three, which are applicable when the contact layer material and the optical lens material are the same.

The method comprises the following steps: adopting modes such as gas-phase chemical deposition, electron beam evaporation, magnetron sputtering and the like to provide a glass panel, depositing a layer of material protruding out of the surface of the glass panel on the surface of the glass panel to prepare a deposited glass panel, pre-coating photoresist on the surface of the deposited glass panel for photoetching and etching, wherein the photoetching and etching comprises the following steps: and covering the deposited glass panel according to the photoetching projection with a preset size to obtain a projection glass panel, corroding redundant materials of the projection glass panel according to the projection of the projection glass panel, and finally cleaning the photoresist to obtain the optical lens 200 with the contact layer.

The second method comprises the following steps: providing a glass panel, pre-coating photoresist on the upper surface of the glass panel for photoetching and etching, wherein the photoetching and etching comprises the following steps: and covering the glass panel according to photoetching projection with preset size to obtain a projection glass panel, corroding redundant materials of the projection glass panel according to the projection of the projection glass panel, and finally cleaning the photoresist to obtain the optical lens 200 with the contact layer.

The third method comprises the following steps: providing a mould, wherein the size of the optical lens with the contact layer is preset in the mould, introducing a preparation material of the optical lens into the mould, and pouring and melting the optical lens 200 with the contact layer, wherein the preparation material of the optical lens comprises at least one of silicon oxide, aluminum oxide, titanium oxide, magnesium fluoride, calcium fluoride, lead sulfide and quartz.

Assembling an optical lens: after dewaxing and cleaning, the optical lens 200 with the contact layer is mounted on the bracket 000 with the structure of the dam 300, and specifically comprises the following components: the upper end of the box dam 300 is pre-coated with an adhesive material, which may be organic glue or the like, and the contact layer 201 is aligned with the light emitting surface of the LED chip 100, and then is bonded, so that the connection portion 202 of the optical lens 200 having a contact layer is connected with the box dam 300 through the adhesive layer 203. The above steps may be performed by applying a certain pressure to the side of the optical lens 200 away from the sealed cavity 400 from top to bottom by using a flat plate to extrude an excess adhesive material, and making the contact layer 201 and the functional portion 102 of the LED chip 100 fully physically contact, and curing the adhesive material to form the adhesive layer 203 in a high temperature baking, standing, welding, vacuum baking, and the like, for example, the step of curing the adhesive material in a vacuum baking includes: before the adhesive material is cured, the LED light emitting element is placed in a vacuum environment, a negative pressure is pumped in a closed cavity formed by the holder 000, the dam 300, and the optical lens 200, and the adhesive material is cured by baking. When the sealed cavity 400 is continuously in a negative pressure state, the contact layer of the optical lens 200 is in closer contact with the light emitting surface of the LED chip 100, which is beneficial to improving the light emitting efficiency and the heat conduction and dissipation effect of the LED light emitting element.

In some embodiments, a plurality of light emitting parts are simultaneously prepared on a plurality of substrates, and the LED light emitting element of the present invention is obtained by laser dicing.

Claims

1. A manufacturing method of an LED light-emitting element is characterized by comprising the following steps:

die bonding: welding a first bonding pad and a second bonding pad on a bracket with a dam, and enabling the first bonding pad and the second bonding pad to be positioned in a cavity formed by the dam on the bracket in a surrounding manner; wherein the lower end of the box dam is arranged on the bracket; connecting the anode of the LED chip with the first bonding pad, connecting the cathode of the LED chip with the second bonding pad, and enabling the LED chip to be positioned in the cavity;

and (3) wax injection process: melting wax into liquid by heating, injecting the liquid into a cavity formed by enclosing a dam on a support, applying pressure from top to bottom by a flat plate, extruding redundant wax liquid, injecting the wax liquid into the cavity, flattening the surface of the wax liquid, and naturally cooling to solidify the wax liquid;

after wax injection, the method also comprises a grinding and polishing process: grinding and polishing the light emitting surfaces of the box dam and the LED chip by using a grinder and a polisher so that the upper end of the box dam and the light emitting surface of the LED chip are positioned on the same horizontal plane;

after grinding and polishing, the method also comprises dewaxing cleaning: cleaning wax of the box dam cavity and the frame of the bracket;

assembling an optical lens: installing an optical lens at the upper end of the box dam to enable the cavity to form a closed cavity, and enabling the optical lens to be in contact with the light emitting surface of the LED chip to obtain the LED light emitting element;

the optical lens comprises a contact layer protruding towards the cavity and a connecting part surrounding the contact layer, and the connecting part is bonded to the upper end of the box dam through a bonding layer; the light emitting surface of the LED chip is in contact with the contact layer; the upper end of the box dam and the light emitting surface of the LED chip are located on the same horizontal plane, and the thickness of the contact layer is equal to that of the bonding layer.

2. An LED light-emitting element, characterized by being manufactured by the manufacturing method of claim 1, and comprising at least one component unit, wherein the component unit comprises: the LED lamp comprises a support, a box dam, an optical lens and an LED chip, wherein the lower end of the box dam is installed on the support, the optical lens is installed at the upper end of the box dam, the support, the box dam and the optical lens are enclosed to form a closed cavity, and the LED chip is located in the closed cavity; the LED chip is provided with an anode, a cathode and a light-emitting surface, the support is provided with a first bonding pad connected with the anode and a second bonding pad connected with the cathode, and the light-emitting surface of the LED chip is in contact with the optical lens.

3. The LED light emitting element according to claim 2, wherein the optical lens includes a contact layer protruding toward the closed cavity, and a connection portion surrounding the contact layer,

the connecting part is bonded at the upper end of the box dam through a bonding layer so as to realize that the optical lens is arranged at the upper end of the box dam;

and the luminous surface of the LED chip is in contact with the contact layer so as to realize that the luminous surface of the LED chip is in contact with the optical lens.

4. The LED lighting element according to claim 2, wherein the lighting surface of the LED chip is a flat surface, a surface of the contact layer contacting the lighting surface is a flat surface, and an area of the surface of the contact layer contacting the lighting surface is not smaller than an area of the lighting surface.

5. The LED light-emitting element according to claim 3 or 4, wherein the contact layer is a portion protruding toward the sealed cavity, and a height of the protrusion with respect to a surface of the connecting portion adjacent to the sealed cavity is a thickness of the contact layer; the thickness of the contact layer is 3-20 μm.

6. The LED light-emitting element according to claim 2 or 3, wherein the optical lens is formed from a material including at least one of silicon oxide, aluminum oxide, titanium oxide, magnesium fluoride, calcium fluoride, lead sulfide, and quartz.

7. The LED light emitting element according to claim 2 or 3, wherein the LED chip is a sapphire substrate; and/or the presence of a gas in the gas,

the LED chip is far away from the one side of support is the light emitting area, the LED chip is close to the one side of support is equipped with anodal with the negative pole.

8. The LED lighting element of claim 2 or 3, wherein at least one of the following conditions is satisfied:

the forming material of the first bonding pad comprises at least one of aluminum, silver, gold, copper, tin, lead and platinum;

the first bonding pad is welded on the bracket;

the anode of the LED chip is welded with the first bonding pad;

the forming material of the second bonding pad comprises at least one of aluminum, silver, gold, copper, tin, lead and platinum;

the second bonding pad is welded on the bracket;

and the cathode of the LED chip is welded with the second bonding pad.

9. The LED light emitting element according to claim 2 or 3, further comprising a zener diode disposed in parallel with the LED chip.

10. The LED light-emitting element according to claim 2 or 3, wherein the first bonding pad and the second bonding pad are disposed on a surface of the support close to the sealed cavity, and a surface of the support away from the sealed cavity has a first lead connected to the first bonding pad and a second lead connected to the second bonding pad.