CN113126194A - Optical filter and automotive varnish - Google Patents
Optical filter and automotive varnish Download PDFInfo
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- CN113126194A CN113126194A CN202010043030.6A CN202010043030A CN113126194A CN 113126194 A CN113126194 A CN 113126194A CN 202010043030 A CN202010043030 A CN 202010043030A CN 113126194 A CN113126194 A CN 113126194A
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Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
- G02B1/005—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials made of photonic crystals or photonic band gap materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
- G02B1/115—Multilayers
Abstract
The application provides an optical filter and an automotive varnish. The optical filter is applied to the automobile varnish, and comprises a photonic crystal structure formed by alternately laminating a high-refractive-index medium layer and a low-refractive-index medium layer; the stop band of the photonic crystal structure is arranged in the near infrared band, and the pass band of the photonic crystal structure is arranged in the visible band. The optical filter provided by the application can realize high transmission in a visible light wave band and high reflection in a near infrared wave band.
Description
Technical Field
The application relates to the technical field of light filtering materials, in particular to a light filter and automobile varnish.
Background
Automotive paints are increasingly gaining attention as a top layer for automobiles. It is represented by a multilayer structure, generally comprising, starting from the base steel plate, a primer, a paint midway, a color coat and a clear coat.
The varnish on the outermost layer is used as a colorless transparent coating, and can effectively prevent the oxidation of colored paint on the lower layer and increase the glossiness of the automobile paint.
At present, most of automobile varnish produced in China is mainly made of resin materials, and yellowing is easy to occur under long-term irradiation of sunlight and ultraviolet rays, so that the appearance of an automobile is greatly influenced. When infrared sensors such as laser radar are used for detecting dark vehicles on roads, the carbon black-based pigment usually adopted by dark vehicle paints such as black, gray and blue absorbs electromagnetic waves in Near Infrared (NIR) bands, so that the reflectivity of the electromagnetic waves in the bands is low, and the detection of the vehicles is influenced.
Disclosure of Invention
The application provides an optical filter, which is applied to automobile varnish to solve the problems that the automobile varnish is easy to yellow and the light wave reflectivity of a near-infrared band is low.
In order to solve the technical problem, the application adopts a technical scheme that: the optical filter is applied to automobile varnish, and comprises a photonic crystal structure formed by alternately laminating a high-refractive-index medium layer and a low-refractive-index medium layer; the stop band of the photonic crystal structure is arranged in the near infrared band, and the pass band of the photonic crystal structure is arranged in the visible band.
In order to solve the technical problem, the application adopts a technical scheme that: there is provided an automotive varnish comprising a base solvent and an optical filter as described above dispersed in the base solvent.
The beneficial effect of this application is: be different from the condition of correlation technique, the light filter that this application provided includes the photonic crystal structure of the mutual range upon range of formation of high refracting index dielectric layer and low refracting index dielectric layer, through setting up the stop band of photonic crystal structure at near infrared wave band, can improve the reflectivity of near infrared wave band light wave, and through setting up the passband of photonic crystal structure at the visible light wave band, can effectively see through visible light for when the light filter is used in the car varnish, guarantee its transparent effect.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, it is obvious that the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without inventive efforts, wherein:
FIG. 1 is a schematic structural diagram of a first embodiment of a filter according to the present application;
FIG. 2 is a schematic diagram of a photonic crystal structure of a first embodiment of the filter of the present application;
FIG. 3 is a schematic structural diagram of a second embodiment of the optical filter of the present application;
FIG. 4 is a spectral diagram of reflectance/transmittance versus wavelength for a second embodiment of the filter of the present application;
FIG. 5 is a schematic diagram of a filter according to a third embodiment of the present disclosure;
FIG. 6 is a schematic structural diagram of a fourth embodiment of the optical filter of the present application;
FIG. 7 is a spectral diagram of reflectance/transmittance versus wavelength for a fourth embodiment of the filter of the present application;
FIG. 8 is a spectral diagram of another reflectance-wavelength spectrum of a fourth embodiment of the filter of the present application;
FIG. 9 is a schematic structural diagram of a fifth embodiment of the optical filter of the present application;
FIG. 10 is a spectral plot of reflectance versus wavelength for a fifth embodiment of an optical filter of the present application;
fig. 11 is a spectral diagram of transmittance versus wavelength for a fifth embodiment of the filter of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that if directional indications (such as up, down, left, right, front, and back … …) are referred to in the embodiments of the present application, the directional indications are only used to explain the relative positional relationship between the components, the movement situation, and the like in a specific posture (as shown in the drawings), and if the specific posture is changed, the directional indications are changed accordingly.
In addition, if there is a description of "first", "second", etc. in the embodiments of the present application, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present application.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a filter according to a first embodiment of the present disclosure.
It should be noted that fig. 1 only schematically shows the structure of the optical filter 100, the number of dielectric layers of the photonic crystal structure 110 of the optical filter 100 in the present application may be 3, 5 or more, and the thicknesses of the respective dielectric layers may also be different.
In the present embodiment, the optical filter 100 is applied to an automotive varnish, and the optical filter 100 includes a photonic crystal structure 110 formed by alternately stacking a high refractive index dielectric layer (denoted by H in fig. 1) and a low refractive index dielectric layer (denoted by L in fig. 1); the stopband of the photonic crystal structure 110 is disposed in the near infrared band and the passband of the photonic crystal structure 110 is disposed in the visible band.
The photonic crystal structure 110 is formed by alternately stacking high refractive index dielectric layers and low refractive index dielectric layers, that is, the high refractive index dielectric materials and the low refractive index dielectric materials are alternately stacked to form a periodic all-dielectric film layer. In this embodiment, "high refractive index" and "low refractive index" are relative concepts, that is, in two adjacent dielectric layers, the refractive index of the high refractive index dielectric layer is higher than that of the low refractive index dielectric layer.
By placing the stop band of the photonic crystal structure 110 in the Near Infrared (NIR) band, the photonic crystal structure 110 exhibits a pass band in the visible band, thereby allowing efficient transmission of visible light. And because the used material is a transparent dielectric material, the extinction coefficient (i.e. the imaginary part of the refractive index) of the material in the visible light region is close to 0, most of incident light in the visible light wave band range can penetrate through the structure, and the transmissivity is high, so that the transparent effect of the optical filter 100 can be ensured when the optical filter is applied to the automobile varnish. Meanwhile, the photonic crystal structure 110 is different from the traditional resin, so that the yellowing probability of the automobile varnish can be effectively reduced.
In an application scenario, as the development of the auto-driven automobile continues to increase in speed in recent years, as one of core technologies for the auto-driven automobile to sense the surrounding environment, an infrared sensor such as a laser radar still faces a small challenge in detecting dark-colored vehicles on a road. This is mainly because the lidar detects by emitting electromagnetic waves in the near-infrared band, and the carbon black-based pigments commonly used in dark car paints such as black, gray, and blue will absorb the radiation in these bands, resulting in a decrease in the reflectivity of the electromagnetic waves in the near-infrared band emitted by the lidar, thereby affecting the 3D perception of the autonomous vehicle of the surrounding environment. The filter 100 in this embodiment can improve the reflectivity of the light wave in the near-infrared band by setting the stop band of the photonic crystal structure 110 in the near-infrared band, so that the absorption of the near-infrared light by the lower colored paint is greatly reduced, and the surveying and mapping performance of infrared sensors such as laser radar in an automatic driving vehicle can be remarkably improved.
Generally, the wavelength range of the near infrared band is 800nm to 3000nm, and the wavelength range of the visible light band is 380nm to 800 nm.
Being different from the situation of the related art, the first embodiment of the optical filter 100 provided by the application includes the photonic crystal structure 110 formed by alternately laminating the high refractive index dielectric layer and the low refractive index dielectric layer, the stop band of the photonic crystal structure 110 is arranged at the near-infrared band, so that the reflectivity of the near-infrared band light wave can be improved, the pass band of the photonic crystal structure 110 is arranged at the visible light band, so that the visible light can be effectively transmitted, when the optical filter 100 is applied to the automobile varnish, the transparent effect of the optical filter is ensured, and meanwhile, the probability of yellowing of the automobile varnish can be effectively reduced by the photonic crystal structure 110.
In addition, the photonic crystal structure 110 of the present embodiment is an all-dielectric film structure, and therefore has the characteristics of transparency and controllable transparency.
Optionally, in an actual manufacturing process, the films of the high refractive index medium layer and the low refractive index medium layer may be sequentially and alternately stacked on the main surface of one side of the substrate layer by a vacuum coating machine. A sacrificial layer may also be disposed between the substrate layer and each film layer so that each film layer can be peeled off the substrate layer and pulverized into particles to obtain the optical filter 100, and the optical filter 100 can be applied to automotive varnish.
Referring to fig. 2, fig. 2 is a schematic diagram of a photonic crystal structure of a first embodiment of the optical filter of the present application.
Optionally, the photonic crystal structure 110 includes a first low refractive index medium layer b and first high refractive index medium layers a on both major surfaces of the first low refractive index medium layer b.
Optionally, with continued reference to fig. 2, the photonic crystal structure 110 further includes: and the dielectric lamination period 11 is arranged on the main surface of one side, away from the first low-refractive-index dielectric layer b, of the first high-refractive-index dielectric layer a, and the dielectric lamination period 11 comprises a second low-refractive-index dielectric layer c and a second high-refractive-index dielectric layer d, wherein the second low-refractive-index dielectric layer c is arranged closer to the first high-refractive-index dielectric layer a than the second high-refractive-index dielectric layer d in the same dielectric lamination period 11.
Optionally, the optical thickness of the second low refractive-index dielectric layer c is the same as the optical thickness of the first low refractive-index dielectric layer b, and the optical thickness of the second high refractive-index dielectric layer d is the same as the optical thickness of the first high refractive-index dielectric layer a.
Optionally, the optical thickness of each dielectric layer (including the first high refractive index dielectric layer a, the first low refractive index dielectric layer b, the second low refractive index dielectric layer c, and the second high refractive index dielectric layer d) of the photonic crystal structure 110 is: an odd multiple of one-quarter of the first wavelength, i.e., the optical thickness of each layer of media, is the first wavelength multiplied by one-quarter and then multiplied by an odd number (e.g., 1, 3, or 5). Wherein the first wavelength may range from 800nm to 1600nm, i.e. the first wavelength is within the near infrared band. The first wavelength is a center wavelength corresponding to a photonic stop band of the photonic crystal structure 110. By setting the optical thickness of each dielectric layer of the photonic crystal structure 110 to be an odd multiple of a quarter of the first wavelength, a wavelength band near the first wavelength can be constructively interfered after being totally reflected by the photonic crystal structure 110, so that a higher reflectivity is obtained.
In this embodiment, the optical thickness of each dielectric layer of the photonic crystal structure 110 may be one quarter of the first wavelength.
Specifically, the first wavelength may be: 800nm, 840nm, 900nm, 950nm, 1000nm, 1100nm, 1200nm, 1300nm, 1500nm, 1600 nm. Because the operating band of different near infrared sensors may be different, through setting up first wavelength at different numerical values, can satisfy the survey and drawing demand of different sensors.
The first wavelength corresponds to a center wavelength λ of the stop band of the photonic crystal structure 110cThe bandwidth of the stop band can be calculated according to equation (1):
e.g. λc975nm, the high refractive index material is selected from zinc sulfide (ZnS, refractive index n)H2.45), the low refractive index material is selected to be silicon dioxide (SiO)2Refractive index nL1.45), the bandwidth of the photon stop band is about 320nm according to equation (1).
Optionally, the material selected for the second low refractive-index dielectric layer c is the same as the material selected for the first low refractive-index dielectric layer b, and the material selected for the second high refractive-index dielectric layer d is the same as the material selected for the first high refractive-index dielectric layer a.
That is, in one embodiment, all the high refractive index dielectric layers in the photonic crystal structure 110 are made of the same material, all the low refractive index dielectric layers are made of the same material, and the optical thicknesses of all the dielectric layers are the same. By setting the photonic crystal structure 110 to be a symmetrical structure, the difficulty of the manufacturing process can be reduced, and a more stable and reliable interference effect can be obtained.
Optionally, the number of dielectric stack periods 11 is 0, 1, 2, 3, 4, 5 or more. That is, the dielectric laminated periods 11 may not be provided, or a different number of dielectric laminated periods 11 may be provided.
Experimental studies show that by increasing the number of the dielectric lamination periods 11, a steeper photon stop band can be generated, thereby generating stronger reflection in the near infrared band. This is because introducing more layers of cells will produce more constructive interference. Accordingly, as the number of unit layers increases, the transmission band in the visible light region becomes steeper, and the transmission in the near infrared region decreases.
Optionally, the first high refractive index dielectric layer a is made of a dielectric material with a refractive index greater than 2, and the first low refractive index dielectric layer b is made of a dielectric material with a refractive index less than 2.
In this embodiment, all the high refractive index medium layers may be made of a medium material having a refractive index greater than 2, and all the low refractive index medium layers may be made of a medium material having a refractive index less than 2.
In order to improve the reflectivity of the near-infrared band light wave, the first high-refractive-index dielectric layer a can be made of a dielectric material with a refractive index larger than 2.4, and the first low-refractive-index dielectric layer b can be made of a dielectric material with a refractive index smaller than 1.6.
Generally, the larger the difference between the refractive indices of the high-refractive-index dielectric layer and the low-refractive-index dielectric layer, the higher the reflectivity of the photonic crystal structure 110 for a specific wavelength, and the larger the bandwidth of the resulting photonic stop band.
Optionally, the material of the first high refractive index medium layer a is selected from at least one of lanthanum titanate, titanium dioxide, hafnium dioxide, zinc sulfide, niobium titanium oxide, silicon oxynitride, aluminum oxide, zinc selenide, tungsten oxide, niobium pentoxide, tantalum pentoxide, zirconium oxide, yttrium oxide, and silicon nitride. That is, the first high refractive-index medium layer a may be composed of one material or a mixture of at least two materials.
Optionally, the material of the first low refractive index medium layer b is selected from at least one of silicon dioxide, magnesium fluoride and cryolite. That is, the first low-refractive-index medium layer b may be composed of one material or a mixture of at least two materials described above.
In one embodiment, the material of the first high refractive index dielectric layer a is zinc sulfide, and the material of the first low refractive index dielectric layer b is silicon dioxide.
Because of the high refractive index difference between zinc sulfide and silica, the photonic crystal structure 110 can improve the reflectivity of near-infrared band light waves, and because zinc sulfide has strong absorption in ultraviolet bands (other high refractive index materials also have the effect, such as titanium dioxide), most ultraviolet light can be absorbed or reflected, so the photonic crystal structure 110 also has the characteristic of near-zero transmission of ultraviolet light, when the optical filter 100 of the embodiment is applied to automobile varnish, the ultraviolet light transmission can be effectively blocked, and the tolerance of the colored paint with the lower layer composed of organic dyes or inorganic pigments to ultraviolet light is greatly improved.
Referring to fig. 3 and 4 in combination, fig. 3 is a schematic structural diagram of a second embodiment of the optical filter of the present application. Fig. 4 is a spectral diagram of reflectance/transmittance versus wavelength for a second embodiment of the filter of the present application.
In the present embodiment, the optical filter 100 is composed of a photonic crystal structure 110. The photonic crystal structure 110 includes a first low refractive-index dielectric layer b, a first high refractive-index dielectric layer a on the main surfaces of both sides of the first low refractive-index dielectric layer b, and 2 dielectric stack periods 11 disposed on the main surface of one side of the first high refractive-index dielectric layer a away from the first low refractive-index dielectric layer b. I.e., the filter 100 includes 7 dielectric layers in total.
The material and the optical thickness of the second low-refractive-index dielectric layer c are the same as those of the first low-refractive-index dielectric layer b, and the material and the optical thickness of the second high-refractive-index dielectric layer d are also the same as those of the first high-refractive-index dielectric layer a. The material of the first high refractive index dielectric layer a is zinc sulfide (ZnS, refractive index n is 2.45), and the material of the first low refractive index dielectric layer b is silicon dioxide (SiO)2The refractive index n is 1.45).
Referring to fig. 4, fig. 4 depicts a simulated reflection spectrum (drawn as a solid line) and a transmission spectrum (drawn as a dotted line) of the filter 100 shown in fig. 3 in the uv-vis-nir wavelength band (200nm-1600 nm).
Fig. 4 corresponds to a structure in which the optical thicknesses of the first high-refractive-index dielectric layer a and the first low-refractive-index dielectric layer b are set to a thickness corresponding to a quarter wavelength of about 975nm (NIR band) at the center wavelength λ c of the photonic stop band, that is, the optical thickness of the dielectric layers is about 975nm by one quarter (i.e., the optical thickness of the dielectric layers is set so that the first wavelength is about 975 nm). The bandwidth of the photon stop band is about 320nm according to the formula (1), so that the photonic crystal can realize broadband reflection around 975nm wavelength. Specifically, the physical thicknesses of the first high refractive index dielectric layer a and the first low refractive index dielectric layer b are 100nm and 168nm, respectively.
As can be seen from fig. 4, the filter 100 is in the ultraviolet band: (<380nm) is almost zero, and the average transmittance is about 72% as expressed over the entire visible light band (380nm-800 nm). In the near infrared band (>800nm) due to ZnS and SiO2With a high refractive index difference between the dielectric materials, the filter 100 exhibits a reflection peak with a half-peak width of about 400nm at a wavelength of 975nm, with a peak reflectivity of about 94%. The transmission curve in the visible part has a ringing phenomenon, which can be further improved, please see fig. 7.
Therefore, the optical filter 100 has the characteristics of near-zero transmission of ultraviolet light, higher transmission of visible light and high reflection of near-infrared light, so that after the optical filter 100 is applied to the automobile varnish, the requirement of colorless transparency can be met, the integral ultraviolet tolerance of the automobile varnish is enhanced, and the near-infrared absorption of the automobile varnish can be reduced.
Referring to fig. 5, fig. 5 is a schematic structural diagram of a filter according to a third embodiment of the filter of the present application.
In this embodiment, the anti-reflection layers 120 may be symmetrically disposed on two main surfaces of the photonic crystal structure 110 opposite to each other. The anti-reflection layer 120 serves to reduce reflection in the visible light band. The anti-reflection layer 120 is a dielectric layer.
The anti-reflection layer 120 has a refractive index less than that of the first and second high refractive index medium layers a and d.
The anti-reflection layers 120 are symmetrically arranged on the two sides of the photonic crystal structure 110, so that the reflectivity of the visible light wave band can be effectively reduced, and the transmission of the visible light wave band can be further enhanced.
Since the refractive index of the anti-reflection layer 120 is smaller than the refractive index of the first high refractive index medium layer a, the refractive index difference of the light incident on the anti-reflection layer 120 from the air is smaller than the refractive index difference of the light directly incident on the first high refractive index medium layer a from the air, and therefore, the refractive index difference of the light incident on the photonic crystal structure 110 from the air can be reduced by arranging the anti-reflection layer 120, so that the reflection of the visible light band can be reduced, and the transmission of the visible light band can be enhanced.
Alternatively, the optical thickness of the anti-reflection layer 120 may be set to an odd multiple of a quarter of the second wavelength, which is in the range of 380nm to 800 nm. The second wavelength is, for example, 380nm, 450nm, 500nm, 520nm, 580nm, 600nm, 650nm, 700nm or 800 nm. Since the optical thickness of the anti-reflection layer 120 is an odd multiple of a quarter of the second wavelength, and the second wavelength is within the visible light band, the reflection of visible light can be further reduced by disposing the anti-reflection layer 120, and the anti-reflection layer 120 is made of a dielectric material, and the absorption of light is negligible, so that the transmission of the visible light band is enhanced.
Since the wavelength of the electromagnetic wave that can be sensed by the eyes of a general person is between 400nm and 760nm, the second wavelength may range from 400nm to 760 nm. The second wavelength is, for example, 400nm, 420nm, 450nm, 500nm, 550nm, 600nm, 640nm, 680nm or 760 nm.
In this embodiment, the second wavelength may be in a range of 480nm to 580 nm. For example 480nm, 500nm, 520nm, 550nm, 560nm or 580 nm.
Optionally, the material of the anti-reflection layer 120 is selected from at least one of silicon dioxide, magnesium fluoride, cryolite. That is, the anti-reflection layer 120 may be composed of one material or a mixture of at least two materials described above.
Optionally, the first high refractive index dielectric layer a and the second high refractive index dielectric layer d are made of dielectric materials with a refractive index greater than 2.4, and the antireflection layer 120, the first low refractive index dielectric layer b, and the second low refractive index dielectric layer c are made of dielectric materials with a refractive index less than 1.6.
On one hand, the antireflection layer 120 is made of a material with a smaller refractive index, so that the refractive index difference of light incident to the antireflection layer 120 from air can be further reduced, and the reflection of visible light can be weakened; on the other hand, by making the refractive index difference between the dielectric layers in the photonic crystal structure 110 larger, the larger the bandwidth of the stop band of the obtained photonic crystal structure 110 is, the reflection of the near-infrared band can be further enhanced.
Optionally, the first high refractive index dielectric layer a and the second high refractive index dielectric layer d are made of the same material, and the antireflection layer 120, the first low refractive index dielectric layer b, and the second low refractive index dielectric layer c are made of the same material.
In one embodiment, the material of the anti-reflective layer 120 is silicon dioxide.
Referring to fig. 6 and 7 in combination, fig. 6 is a schematic structural diagram of a fourth embodiment of the optical filter of the present application. FIG. 7 is a spectral diagram of reflectance/transmittance versus wavelength for a fourth embodiment of the filter of the present application.
In this embodiment, the photonic crystal structure 110 includes a first low-refractive-index dielectric layer b, a first high-refractive-index dielectric layer a on two main surfaces of the first low-refractive-index dielectric layer b, and 2 dielectric lamination periods 11 disposed on one main surface of the first high-refractive-index dielectric layer a away from the first low-refractive-index dielectric layer b, and anti-reflection layers 120 are symmetrically disposed on two main surfaces of the photonic crystal structure 110 opposite to each other. I.e., the filter 100 includes 9 dielectric layers in total.
The material and the optical thickness of the second low-refractive-index dielectric layer c are the same as those of the first low-refractive-index dielectric layer b, and the material and the optical thickness of the second high-refractive-index dielectric layer d are also the same as those of the first high-refractive-index dielectric layer a. The material of the first high refractive index dielectric layer a is zinc sulfide (ZnS, refractive index n is 2.45), and the material of the first low refractive index dielectric layer b and the anti-reflection layer 120 is dioxygenSilicon (SiO)2The refractive index n is 1.45).
Referring to fig. 7, fig. 7 depicts a simulated reflection spectrum (drawn as a solid line) and transmission spectrum (drawn as a dotted line) of the filter 100 shown in fig. 6 in the uv-vis-nir wavelength band (200nm-1600 nm).
Fig. 6 corresponds to a structure in which the optical thicknesses of the first high-refractive-index dielectric layer a and the first low-refractive-index dielectric layer b are set to a thickness corresponding to a quarter wavelength of about 975nm (NIR band) at the center wavelength λ c of the photonic stop band, that is, the optical thickness of the dielectric layers is about 975nm by one quarter (i.e., the optical thickness of the dielectric layers is set so that the first wavelength is about 975 nm). The bandwidth of the photon stop band is about 320nm according to the formula (1), so that the photonic crystal can realize broadband reflection around 975nm wavelength. Specifically, the physical thicknesses of the first high refractive index dielectric layer a and the first low refractive index dielectric layer b are 100nm and 168nm, respectively. In addition, the physical thickness of the anti-reflection layer 120(AR) is set to 85nm (corresponding to about 500nm for the second wavelength), and the material of the anti-reflection layer 120 is silicon dioxide for further suppressing the reflection in the visible light band.
As can be seen from fig. 7, the filter 100 is in the ultraviolet band: (<380nm) and exhibits high transmission throughout the visible band (380nm-800nm), with an average transmission of about 91%. In the near infrared band (>800nm) due to ZnS and SiO2Due to the high refractive index difference between the dielectric materials, the filter 100 exhibits a reflection peak with a half-peak width of about 400nm at a wavelength of 1006nm, and has a peak reflectivity of about 90%. And as can be seen from the comparison between fig. 7 and fig. 4, in the case that the antireflection layer is not added (shown in fig. 4), the reflection of the optical filter 100 in the entire visible light band (380nm-800nm) cannot be completely suppressed, and the optical filter shows many oscillatory transmissions rather than a non-uniform broadband high transmission. Therefore, in order to ensure the colorless and transparent property of the optical filter 100 after being applied to the automotive varnish, the optical filter 100 in the embodiment can further suppress the reflection in the visible light band by providing an additional anti-reflection layer, thereby ensuring the uniform output, wide frequency and high transmission.
Therefore, the optical filter 100 has the characteristics of near-zero transmission of ultraviolet light, high transmission of visible light and high reflection of near-infrared light, so that after the optical filter 100 is applied to the automobile varnish, the requirement of colorless transparency can be met, the integral ultraviolet tolerance of the automobile varnish is enhanced, and the near-infrared absorption of the automobile varnish can be reduced.
Referring to fig. 8, fig. 8 is a schematic diagram of another reflectance-wavelength spectrum of the fourth embodiment of the filter of the present application.
In order to improve the mapping performance of the near infrared sensors of more different operating bands, based on the 9-layer structure in the optical filter 100 shown in fig. 6, the structure corresponding to fig. 8 is different from the structure corresponding to fig. 7 in that the optical thicknesses of the first high refractive index medium layer a and the first low refractive index medium layer b are set to be a quarter wavelength thickness corresponding to a central wavelength λ c of the photonic stop band being about 1500nm (NIR band) (i.e., the optical thicknesses of the medium layers are set such that the first wavelength is about 1500 nm). The bandwidth of the photon stop band is about 495nm according to the formula (1), so that the photonic crystal can realize broadband reflection around 1500nm wavelength. Specifically, the physical thickness of the first high refractive index dielectric layer a is 163nm, and the physical thickness of the first low refractive index dielectric layer b is 260 nm. The physical thickness of the anti-reflection layer 120(AR) is set to 130nm, and the material of the anti-reflection layer 120 is silicon dioxide, which is used to further suppress the reflection of the visible light band.
The corresponding simulated reflectance spectrum is shown in FIG. 8 in the near infrared band (specifically, in wavelength)>In the 1200nm range) due to ZnS and SiO2Due to high refractive index difference between dielectric materials, the structure has a reflection peak with a half-peak width of about 600nm at a 1512nm wavelength position, and the peak reflectivity of the structure is about 89%, so that the mapping performance of the near infrared sensor with the working waveband in the range can be improved.
Referring to fig. 9, fig. 10 and fig. 11 in combination, fig. 9 is a schematic structural diagram of a fifth embodiment of the optical filter of the present application. FIG. 10 is a spectral diagram of reflectance versus wavelength for a fifth embodiment of the filter of the present application. Fig. 11 is a spectral diagram of transmittance versus wavelength for a fifth embodiment of the filter of the present application.
In order to further study the influence of the number of dielectric stack periods 11 in the photonic crystal structure 110 of the optical filter 100 on the optical properties of the photonic crystal structure 110 (except for the number of dielectric stack periods 11, the material and thickness of the dielectric layers are the same as those of the photonic crystal structure 110 in the second embodiment), the present application simulates the reflection and transmission performance of the optical filter 100 when the number of dielectric stack periods 11 is increased from 0 to 3 (corresponding to the increase of the total number of dielectric layers of the optical filter 100 from 5 to 11).
In which fig. 10 depicts a simulated reflection spectrum of the above-described filter 100 in the visible-near infrared band. Fig. 11 depicts a simulated transmission spectrum of the filter 100 described above in the uv-vis band. The different curve types in fig. 10 and 11 represent the reflection and transmission spectra of the filter 100 for different numbers of layers, labeled: 11-layer stacks indicate that the total number of dielectric layers of the optical filter 100 is 11, 9-layer stacks indicate that the total number of dielectric layers of the optical filter 100 is 9, 7-layer stacks indicate that the total number of dielectric layers of the optical filter 100 is 7, and 5-layer stacks indicate that the total number of dielectric layers of the optical filter 100 is 5.
As can be seen from fig. 10, increasing the dielectric stack period 11 and increasing the number step by step can produce a steeper photon stop band, thereby producing a stronger reflection in the near infrared band. It can be seen that, as the number of the dielectric stack periods 11 increases, more constructive interference is generated, so that stronger reflection is obtained in the near infrared band, and as the number of the dielectric stack periods 11 increases, the transmission band in the visible light region becomes gradually steeper and approaches a zigzag shape.
In addition, it was experimentally found that the extinction coefficient (i.e., the imaginary part of refractive index) of ZnS in the visible light region was not completely 0, showing a slight loss. It can be seen from fig. 11 that as the number of the dielectric stack periods 11 increases, more ZnS layers slightly absorb the incident light, resulting in a gradual decrease in visible light transmittance, but still substantially higher than 80% overall, while blocking more uv transmission.
As can be seen from the above embodiments and experimental data, the optical filter 100 of the present application can effectively transmit visible light by including the photonic crystal structure 110 formed by alternately stacking high refractive index dielectric layers and low refractive index dielectric layers, and setting the stop band of the photonic crystal structure 110 in the near-infrared band, which can improve the reflectivity of the near-infrared band light wave, and setting the pass band of the photonic crystal structure 110 in the visible light band.
The present application also proposes an automotive varnish comprising a base solvent and an optical filter 100 according to any of the embodiments described above dispersed in the base solvent. The optical filter 100 may be in the form of powder.
The base solvent may include, but is not limited to, glycol ethers, alcohols, aromatics (e.g., aromatic hydrocarbons), colorless mineral spirits, branched ketones, esters, and combinations thereof. According to one or more embodiments, the base solvent may be selected from: at least one of ethylene glycol, diethylene glycol monoethyl ether, dipropylene glycol dimethyl ether, propylene glycol methyl ether, ethanol, and dipropylene glycol methyl ether.
Be different from the condition of correlation technique, the light filter that this application provided includes the photonic crystal structure of the mutual range upon range of formation of high refracting index dielectric layer and low refracting index dielectric layer, through the stop band setting with photonic crystal structure at near infrared wave band, can improve the reflectivity of near infrared wave band light wave, and through setting up the passband of photonic crystal structure at the visible light wave band, can effectively see through visible light for when the light filter is used in the car varnish, guarantee its transparent effect, the probability that the yellowing takes place for the car varnish can also effectively be reduced to the photonic crystal structure simultaneously.
The above description is only for the purpose of illustrating embodiments of the present invention and is not intended to limit the scope of the present invention, and all modifications, equivalents, and equivalent structures or equivalent processes that can be used directly or indirectly in other related fields of technology shall be encompassed by the present invention.
Claims (14)
1. The optical filter is characterized by being applied to automotive varnish, and comprising a photonic crystal structure formed by alternately laminating a high-refractive-index medium layer and a low-refractive-index medium layer;
the stop band of the photonic crystal structure is arranged at a near infrared band, and the pass band of the photonic crystal structure is arranged at a visible light band.
2. The filter of claim 1, wherein the photonic crystal structure comprises a first low-refractive-index dielectric layer and first high-refractive-index dielectric layers on both major surfaces of the first low-refractive-index dielectric layer.
3. The optical filter of claim 2, wherein the photonic crystal structure further comprises at least one dielectric stacking period disposed on a major surface of the first high refractive index dielectric layer on a side away from the first low refractive index dielectric layer, the dielectric stacking period comprising a second low refractive index dielectric layer and a second high refractive index dielectric layer, wherein the second low refractive index dielectric layer is disposed closer to the first high refractive index dielectric layer than the second high refractive index dielectric layer in the same dielectric stacking period.
4. The optical filter according to claim 3, wherein the optical thickness of the second low-refractive-index dielectric layer is the same as the optical thickness of the first low-refractive-index dielectric layer, and the optical thickness of the second high-refractive-index dielectric layer is the same as the optical thickness of the first high-refractive-index dielectric layer.
5. The optical filter according to claim 4, wherein the second low refractive index medium layer is made of the same material as the first low refractive index medium layer, and the second high refractive index medium layer is made of the same material as the first high refractive index medium layer.
6. A filter as claimed in claim 3, wherein the number of periods of the dielectric stack is 1, 2, 3, 4 or 5.
7. The optical filter according to claim 4, wherein the first high refractive index medium layer is made of a medium material having a refractive index greater than 2, and the first low refractive index medium layer is made of a medium material having a refractive index less than 2.
8. The optical filter according to claim 7, wherein the material of the first high refractive index medium layer is at least one selected from lanthanum titanate, titanium dioxide, hafnium dioxide, zinc sulfide, niobium titanium oxide, silicon oxynitride, aluminum oxide, zinc selenide, tungsten oxide, niobium pentoxide, tantalum pentoxide, zirconium oxide, yttrium oxide, and silicon nitride;
the material of the first low-refractive-index dielectric layer is at least one selected from silicon dioxide, magnesium fluoride and cryolite.
9. The optical filter according to claim 4, wherein the optical thicknesses of the first high refractive index medium layer and the first low refractive index medium layer are odd multiples of one quarter of a first wavelength, and the first wavelength is in a range of 800nm to 1600 nm.
10. The optical filter according to claim 4, wherein the first high refractive index dielectric layer is made of zinc sulfide, and the first low refractive index dielectric layer is made of silicon dioxide.
11. The optical filter according to claim 2, wherein anti-reflection layers are symmetrically disposed on two main surfaces of the photonic crystal structure opposite to each other;
the refractive index of the anti-reflection layer is smaller than that of the first high-refractive-index dielectric layer.
12. The filter according to claim 11, wherein the anti-reflection layer is made of a material selected from at least one of silicon dioxide, magnesium fluoride and cryolite;
the optical thickness of the anti-reflection layer is an odd multiple of one fourth of the second wavelength, and the range of the second wavelength is 380nm-800 nm.
13. The optical filter according to claim 11, wherein the first high refractive index dielectric layer is made of a dielectric material having a refractive index greater than 2.4, and the first low refractive index dielectric layer and the antireflection layer are made of a dielectric material having a refractive index less than 1.6.
14. An automotive varnish, comprising a base solvent and an optical filter according to any one of claims 1 to 13 dispersed in the base solvent.
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| US6104530A (en) * | 1996-05-28 | 2000-08-15 | Mitsui Chemicals, Inc. | Transparent laminates and optical filters for displays using same |
| CN101173122A (en) * | 2006-11-03 | 2008-05-07 | 福特全球技术公司 | Reflective clear coat composition |
| CN107650849A (en) * | 2016-07-26 | 2018-02-02 | 福特环球技术公司 | Use the vehicle part of detectable layer |
| CN108521768A (en) * | 2016-01-13 | 2018-09-11 | 日本涂料控股有限公司 | The forming method of multilayer film and multilayer film |
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2020
- 2020-01-15 CN CN202010043030.6A patent/CN113126194A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6104530A (en) * | 1996-05-28 | 2000-08-15 | Mitsui Chemicals, Inc. | Transparent laminates and optical filters for displays using same |
| CN101173122A (en) * | 2006-11-03 | 2008-05-07 | 福特全球技术公司 | Reflective clear coat composition |
| CN108521768A (en) * | 2016-01-13 | 2018-09-11 | 日本涂料控股有限公司 | The forming method of multilayer film and multilayer film |
| CN107650849A (en) * | 2016-07-26 | 2018-02-02 | 福特环球技术公司 | Use the vehicle part of detectable layer |
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