CN113125111B - External quantum efficiency testing method for vertical cavity surface emitting laser - Google Patents

External quantum efficiency testing method for vertical cavity surface emitting laser Download PDF

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CN113125111B
CN113125111B CN202110388186.2A CN202110388186A CN113125111B CN 113125111 B CN113125111 B CN 113125111B CN 202110388186 A CN202110388186 A CN 202110388186A CN 113125111 B CN113125111 B CN 113125111B
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cavity surface
surface emitting
vertical cavity
emitting laser
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李豫东
陈加伟
玛丽娅·黑尼
郭�旗
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Xinjiang Technical Institute of Physics and Chemistry of CAS
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02—Testing optical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
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Abstract

The invention discloses a method for testing external quantum efficiency of a vertical cavity surface emitting laser, and belongs to the technical field of photoelectric testing. The scheme provided by the invention is as follows: the method comprises the steps of measuring the change relation of the optical power of the vertical cavity surface emitting laser along with current, obtaining threshold current through linear fitting on data of a fluorescence mode area and a laser mode area of the vertical cavity surface emitting laser, measuring the spectrum of the vertical cavity surface emitting laser, and further obtaining the change rule of external quantum efficiency along with injected current by utilizing the threshold current and working wavelength. The invention has the following advantages: the factor that the wavelength is red-shifted due to the injection current is considered, and the accuracy of a calculation result is higher; the method can conveniently measure the external quantum efficiency of the packaged or unpackaged vertical cavity surface emitting laser, and can be used for analyzing the influence of the chip structure and the packaging structure on the external quantum efficiency of the vertical cavity surface emitting laser.

Description

External quantum efficiency testing method for vertical cavity surface emitting laser
Technical Field
The invention belongs to the field of photoelectric technology test, and particularly relates to a method for measuring external quantum efficiency of a vertical cavity surface emitting laser by using electroluminescence luminous power and electroluminescence spectrum. The invention is suitable for measuring the external quantum efficiency of the vertical cavity surface structure laser with all wavelengths.
Background
A Vertical Cavity Surface Emitting Laser (VCSEL), which is a high-efficiency light emitting device capable of efficiently converting electrical energy into optical energy, plays an important role in optical sensing in high-speed optical communication, biomedical, industrial, automotive, and consumer products, and has a light emitting efficiency that can be characterized by an external quantum efficiency of the VCSEL, i.e., a ratio of the number of photons emitted from the VCSEL into a free space per unit time to the number of electrons injected into the VCSEL per unit time. At present, due to the temperature characteristics of Vertical Cavity Surface Emitting Lasers (VCSELs) and the red shift problem of the operating wavelength, how to accurately test the external quantum efficiency of the VCSELs has been an important issue. Therefore, it is important to measure the external quantum efficiency of a Vertical Cavity Surface Emitting Laser (VCSEL) by a method that eliminates the above-mentioned effects and makes it closer to the true value.
Disclosure of Invention
The invention aims to provide an external quantum efficiency test method of a vertical cavity surface emitting laser, which measures the relation of the light power of the vertical cavity surface emitting laser changing along with the injected current, carries out linear fitting through data of fluorescence and laser modes in a light power-current curve, the abscissa corresponding to the intersection point of two straight lines is threshold current, then tests the spectrum of the vertical cavity surface emitting laser, obtains the relation of working wavelength and current, and calculates the relation of the external quantum efficiency changing along with the injected current. The method takes the factor that the wavelength is subjected to red shift by the injected current into consideration, so that the accuracy of the calculation result is higher; the method can conveniently measure the external quantum efficiency of the packaged or unpackaged vertical cavity surface emitting laser, and can be used for analyzing the influence of a chip structure and a packaging structure on the external quantum efficiency of the vertical cavity surface emitting laser.
The invention relates to a method for testing external quantum efficiency of a vertical cavity surface emitting laser, which adopts the following steps of measuring the relation that the optical power of the vertical cavity surface emitting laser changes along with the injected current, carrying out linear fitting through data of a fluorescence mode and a laser mode in an optical power-current curve, determining a horizontal coordinate corresponding to the intersection point of two straight lines as a threshold current, testing the spectrum of the vertical cavity surface emitting laser, obtaining the relation between a working wavelength and the current, calculating the relation that the external quantum efficiency changes along with the injected current, and carrying out the specific operation;
a. measuring the change relation between the optical power and the working wavelength of the vertical cavity surface emitting laser along with the injection current, wherein the current range is from 0mA to 30mA, and the temperature is controlled to be consistent when the wavelength and the optical power of the vertical cavity surface emitting laser are measured;
b. according to the change relation result of the working wavelength tested in the step a along with the injection current, the formula
Figure BDA0003014655920000021
Calculating and injecting powerA forbidden bandwidth corresponding to the stream;
c. b, respectively taking data of fluorescence and laser modes from the light power-current curve obtained in the step a, and solving an equation y = ax + b of unary linear regression by a least square method, wherein a fitting equation is shown as follows;
Figure BDA0003014655920000022
Figure BDA0003014655920000023
d. c, determining the threshold current of the vertical cavity surface emitting laser in the optical power-current curve as an x-axis coordinate corresponding to the intersection point of the two fitting straight lines according to the two fitting straight lines in the step c;
e. according to the forbidden bandwidth and the threshold current obtained in the steps b and d, utilizing a formula:
Figure BDA0003014655920000024
and calculating a change curve of the external quantum efficiency along with the injected current to obtain the external quantum efficiency of the vertical cavity surface emitting laser.
The working wavelength of the vertical cavity surface emitting laser covers 300nm-1600nm.
The invention provides an external quantum efficiency testing method of a vertical cavity surface emitting laser, which comprises the following steps:
measuring to obtain a graph of the relationship between the optical output power and the injection current of the vertical cavity surface emitting laser;
in the obtained optical power-current curve, respectively taking data of fluorescence and laser modes, and solving an equation y = ax + b of unary linear regression of the fluorescence and laser modes by a least square method, wherein an empirical fitting equation is as follows;
Figure BDA0003014655920000025
Figure BDA0003014655920000026
determining the threshold current of the vertical cavity surface emitting laser in the optical power-current curve as an x-axis coordinate corresponding to the intersection point of the two fitted straight lines;
measuring the spectrum of the VCSEL using a spectrometer and calculating the forbidden bandwidth E of the VCSEL gI ；
Figure BDA0003014655920000027
Wherein E gI The forbidden bandwidth is, lambda is the working wavelength, h is the Planck constant, and c is the speed of light;
calculating to obtain the relation of the external quantum efficiency along with the injected current, wherein the formula is as follows;
Figure BDA0003014655920000031
wherein eta eqeI For external quantum efficiency, P outI Optical power, I, corresponding to the injected current th Is a threshold current, E gI The forbidden bandwidth.
The vertical cavity surface emitting laser structure comprises an n-electrode 1, an n-type distributed Bragg reflecting layer 2, a coating layer 3, an oxide aperture 4, a p-type distributed Bragg reflecting layer 5, a p-electrode 6, a quantum well 7, an n-GaAS substrate 8 and a heat sink 9, laser is generated by current injection, and the laser is reflected in the n-type distributed Bragg reflecting layer 2 and the p-type distributed Bragg reflecting layer 5 and is emitted from the top of the vertical cavity surface emitting laser.
The thickness of the n-type distributed Bragg reflection layer 2 and the p-type distributed Bragg reflection layer 5 of the vertical cavity surface emitting laser is 1/4 of the working wavelength.
Compared with the prior art, the external quantum efficiency testing method of the vertical cavity surface emitting laser has the advantages that:
(1) The conventional external quantum efficiency calculation method generally directly uses the working wavelength in a Vertical Cavity Surface Emitting Laser (VCSEL) device manual, but the working wavelength slightly changes along with the increase of injection current, so that the external quantum efficiency calculation result is not accurate enough.
(2) The Vertical Cavity Surface Emitting Laser (VCSEL) adopts a packaging structure to protect a chip during actual work, and the method can measure the external quantum efficiency of the packaged or unpackaged VCSEL, so that the method can be used for analyzing the influence of the chip structure and the packaging structure on the external quantum efficiency of the VCSEL.
The invention provides a method for measuring the external quantum efficiency of a vertical cavity surface emitting laser, which is suitable for measuring the external quantum efficiency of the vertical cavity surface structure laser with all wavelengths.
Drawings
FIG. 1 is a schematic diagram of the structure of a test VCSEL of the present invention;
FIG. 2 is a graph of optical power versus current for testing VCSELs of the present invention;
FIG. 3 is a graph of operating wavelength versus current for a test VCSEL of the present invention;
fig. 4 is a graph of external quantum efficiency versus injection current for a test vcsel of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described with reference to the following specific examples, and with reference to fig. 1-4.
Examples
In this example, a 680nm multimode vertical cavity surface emitting laser of the Vixar company is taken as an example, an epitaxial structure of the vertical cavity surface emitting laser is shown in fig. 1, an n electrode 1, an n-type Distributed Bragg Reflector (DBR) 2, a quantum well 7 and a cladding layer 3, an oxide layer 4 for limiting current injection, a p-type Distributed Bragg Reflector (DBR) 5 and a p electrode 6 are respectively grown on an n-type GaAs substrate 8, the optimal working current is 13mA at a temperature of 30 ℃, the peak optical power is 7.5mW, a relation that the optical power of the vertical cavity surface emitting laser changes along with the injection current is measured, linear fitting is performed through data of a fluorescence and laser mode in an optical power-current curve, a horizontal coordinate corresponding to an intersection point of two straight lines is a threshold current, a spectrum of the vertical cavity surface emitting laser is tested to obtain a relation between the working wavelength and the current, a relation that the external quantum efficiency changes along with the injection current is calculated, and the specific operation is performed according to the following steps;
a. measuring the change relation between the optical power and the working wavelength of the vertical cavity surface emitting laser along with the injection current, wherein the current range is from 0 to 15mA, and the temperature is controlled to be consistent when the wavelength and the optical power of the vertical cavity surface emitting laser are measured;
b. according to the change relation result of the working wavelength tested in the step a along with the injection current, the formula
Figure BDA0003014655920000041
Calculating the forbidden bandwidth corresponding to the injection current;
c. b, respectively taking data of fluorescence and laser modes from the optical power-current curve obtained in the step a, and solving an equation y = ax + b of unary linear regression by a least square method, wherein a fitting equation is shown as follows;
Figure BDA0003014655920000042
Figure BDA0003014655920000043
d. c, determining the threshold current of the vertical cavity surface emitting laser in the optical power-current curve as an x-axis coordinate corresponding to the intersection point of the two fitting straight lines according to the two fitting straight lines in the step c;
e. according to the forbidden bandwidth and the threshold current obtained in the steps b and d, utilizing a formula:
Figure BDA0003014655920000044
calculating a change curve of the external quantum efficiency along with the injection current to obtain the external quantum efficiency of the vertical cavity surface emitting laser;
measuring the optical power-current curve of the VCSEL, as shown in FIG. 2, the test current is 0-15mA;
the fluorescence mode and laser mode data are subjected to linear fitting, and the equations for obtaining two fitting straight lines are respectively as follows:
y 1 ＝0.01438x 1 -0.00365
y 2 ＝0.85842x 2 -2.3236
calculating the intersection point of the two fitting straight lines as a threshold current, and calculating the threshold current as I th ：2.7486mA；
Measuring the operating wavelength-current curve of the VCSEL, as shown in FIG. 3, the test current is 3-15mA;
calculating to obtain the forbidden band width under the corresponding injection current, wherein the calculation result of the forbidden band width is shown in figure 3, and the value of the forbidden band width corresponds to the right ordinate;
from the forbidden band width and the threshold current
Figure BDA0003014655920000051
The external quantum efficiency of the vcsel is calculated and the calculation result is shown in fig. 4.
The above-mentioned embodiments are only examples of the present invention, and are not intended to limit the present invention, and any modifications, substitutions, improvements, etc. within the spirit and principle of the present invention should be included in the scope of the present invention.

Claims (2)

1. A method for testing external quantum efficiency of a vertical cavity surface emitting laser is characterized in that the method measures the relation that the optical power of the vertical cavity surface emitting laser changes along with the injected current, linear fitting is carried out through data of fluorescence and laser modes in an optical power-current curve, the abscissa corresponding to the intersection point of two straight lines is threshold current, then the spectrum of the vertical cavity surface emitting laser is tested to obtain the relation between working wavelength and current, the relation that the external quantum efficiency changes along with the injected current is obtained through calculation, and the specific operation is carried out according to the following steps;
a. measuring the change relation between the optical power and the working wavelength of the vertical cavity surface emitting laser along with the injection current, wherein the current range is from 0mA to 30mA, and the test temperature is controlled to be consistent when the wavelength and the optical power of the vertical cavity surface emitting laser are measured;
b. according to the change relation result of the working wavelength tested in the step a along with the injection current, the formula
Figure FDA0004040393430000011
Calculating the forbidden bandwidth corresponding to the injection current;
c. b, respectively taking data of fluorescence and laser modes from the optical power-current curve obtained in the step a, and solving an equation y = ax + b of unary linear regression by a least square method, wherein a fitting equation is shown as follows;
Figure FDA0004040393430000012
Figure FDA0004040393430000013
d. according to the two fitting straight lines in the step c, determining that the threshold current of the vertical cavity surface emitting laser in the optical power-current curve is an x-axis coordinate corresponding to the intersection point of the two fitting straight lines;
e. according to the forbidden bandwidth and the threshold current obtained in the steps b and d, utilizing a formula:
Figure FDA0004040393430000014
calculating out the variation curve of the external quantum efficiency along with the injection current to obtain the external quantum efficiency of the vertical cavity surface emitting laser, wherein eta eqel For external quantum efficiency, P outl Optical power, I, corresponding to the injected current th Is a threshold current, E gI The forbidden bandwidth.
2. A method as claimed in claim 1, wherein said vcsel has an operating wavelength that covers 300nm-1600nm.
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JP4803992B2 (en) * 2004-06-02 2011-10-26 株式会社リコー Light emitting device, optical transmission system, and vertical cavity surface emitting semiconductor laser element
US7391800B2 (en) * 2005-02-02 2008-06-24 Ricoh Company, Ltd. Vertical cavity surface-emitting semiconductor laser device, optical transmission module, optical transmission device, and optical switching method
CN102354712A (en) * 2011-06-24 2012-02-15 中国科学院上海微系统与信息技术研究所 Wide spectrum high reflectivity irregularly shaped distributed Brag reflector (IDBR) and manufacturing method thereof
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JP2007243073A (en) * 2006-03-10 2007-09-20 Dowa Holdings Co Ltd Vertical cavity light emitting diode
CN103808497A (en) * 2014-03-05 2014-05-21 中国科学院半导体研究所 Method for measuring quantum efficiency in LED

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