CN113122819A - Preparation method of tantalum-doped large-area two-dimensional niobium disulfide material - Google Patents
Preparation method of tantalum-doped large-area two-dimensional niobium disulfide material Download PDFInfo
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Abstract
The invention discloses a preparation method of a tantalum-doped large-area two-dimensional niobium disulfide material, belongs to the technical field of two-dimensional material preparation, and is used for solving the problems that a thin-layer sample is required to be prepared by a mechanical stripping method in most researches, the method is time-consuming, labor-consuming, incapable of batch preparation, difficult to accurately control thickness and size and the like. The invention provides a preparation method of a large-area tantalum-doped two-dimensional niobium disulfide material, which takes transition metal oxide and sulfur powder as source substances, introduces salt-assisted ammonium chloride, adopts fluorophlogopite and a silicon wafer as growth substrates, and rapidly grows and prepares the material under nitrogen-hydrogen mixed carrier gas, wherein the prepared two-dimensional material has a larger size, the maximum niobium disulfide can reach 115 micrometers, and the tantalum-doped niobium disulfide can reach 112 micrometers.
Description
Technical Field
The invention relates to the technical field of two-dimensional material preparation, in particular to a preparation method of a tantalum-doped large-area two-dimensional niobium disulfide material.
Background
Two-dimensional transition metal sulfides generally have superconducting, charge density wavesAnd the two-dimensional systems are also ideal materials for researching the origin and interaction relationship of superconductivity and charge density waves. Niobium disulfide (NbS)2) Transition metal sulfide materials, which are a kind of layered structure, have attracted much attention because of their superconductivity, optical properties, and magnetic properties. In addition, a single layer of tantalum disulfide (TaS)2) Having two structures, 2H and 1T, different structures determining the differences in their properties, 2H-TaS2Exhibits superconductivity at temperatures as low as 2.2K or less, 1T-TaS2The transformation from the non-common degree charge density wave phase to the near-common degree charge density wave phase and the transformation from the near-common degree charge density wave phase to the common degree charge density wave phase sequentially occur along with the temperature reduction.
The doping of chemical elements can be realized through the control of conditions in the chemical vapor deposition process, so that the energy band structure is changed to regulate and control the properties of the chemical elements, and the doping has more remarkable effect on the property regulation and control under the condition of two-dimensional confinement. In most researches, a thin-layer sample is prepared by adopting a mechanical stripping method, and the method has the problems of time consumption, labor waste, incapability of batch preparation, difficulty in accurately controlling thickness and size and the like.
Disclosure of Invention
Technical problem to be solved
Aiming at the defects of the prior art, the invention provides a preparation method of a tantalum-doped large-area two-dimensional niobium disulfide material, which is used for solving the problems that a thin-layer sample is required to be prepared by a mechanical stripping method in most researches, the method is time-consuming, labor-consuming, incapable of batch preparation, difficult to accurately control the thickness and the size and the like.
(II) technical scheme
In order to achieve the purpose, the invention is realized by the following technical scheme: a preparation method of a tantalum-doped large-area two-dimensional niobium disulfide material comprises the following raw materials: a first source substance, a second source substance, a third source substance, an additive, a first growth substrate and a second growth substrate;
the preparation method of the tantalum-doped large-area two-dimensional niobium disulfide material comprises the following steps:
step S1: sticking a 3M adhesive tape on the front and back surfaces of the first growth substrate in a super-clean workbench, tearing off the surface layer of the front and back surfaces of the first growth substrate by a method similar to mechanical stripping, and storing in an electronic drying oven for later use; ultrasonic cleaning the second growth substrate with acetone, isopropanol and ethanol, and cutting into 35 × 13mm with silicon knife2Then placing the silicon wafer in a silicon wafer box for standby;
step S2: respectively weighing a source substance I, a source substance III, an additive and a source substance II, putting the source substance I, the source substance III and the additive into a mortar, grinding until the source substance I, the source substance III and the additive are uniformly mixed, putting the mixture into a quartz boat A, and then putting the source substance II into a quartz boat B;
step S3: the treated first growth substrate and the treated second growth substrate are reversely buckled above the quartz boat A and pushed into the quartz tube to ensure that the middle position of the quartz boat A is opposite to a thermocouple close to a downstream temperature zone, and the quartz boat B is also placed in the position which is 25cm away from the mica in the quartz tube of the tube furnace;
step S4: and (3) carrying out gas washing operation on the quartz tube: firstly, a vacuum mechanical pump is used for vacuumizing a quartz tube until the air pressure is 1Pa, then 400sccm of nitrogen is introduced for 10 minutes, and the air suction-ventilation process is repeated for 3 times; the air content in the quartz tube is reduced to a very low level, so that preparation can be made for the next reaction, and the quartz tube can be in an inert gas environment by virtue of gas washing, so that reactants are prevented from being deteriorated by water and oxygen, and the influence of the growth environment in the quartz tube on the subsequent chemical reaction is reduced;
step S5: closing the nitrogen, introducing mixed gas of 20sccm, and heating and insulating the quartz boat A and the quartz boat B; keeping the quartz tube at normal pressure so as to facilitate the chemical vapor deposition reaction to be carried out at normal pressure;
step S6: opening a furnace cover immediately after the heat preservation is finished, quickly cooling, and taking out mica after the temperature of the furnace tube is reduced to room temperature to obtain a tantalum-doped large-area two-dimensional niobium disulfide material; the rapid cooling can prevent the phase change of the target product on the first growth substrate in the slow cooling process.
Preferably, the first source substance is niobium pentoxide, the second source substance is sulfur powder, the third source substance is tantalum pentoxide, the additive is ammonium chloride, the first growth substrate is fluorophlogopite, the second growth substrate is a silicon wafer, and the silicon wafer is an SiO2/Si silicon wafer.
Preferably, in step S2, the dosage ratio of the source substance one, the source substance two, the source substance three and the additive is 9 mg: 200 mg: 9 mg: 180 mg.
Preferably, the mixed gas in step S5 is a mixture of nitrogen and hydrogen in a volume ratio of 95: 5, and mixing.
Preferably, the heating and heat preservation in step S5 includes the following specific steps: the quartz boat A is heated to 800 ℃ at a heating rate of 20 ℃/min and then is kept for 20 minutes, and the quartz boat B is heated to 300 ℃ at a heating rate of 7.5 ℃/min and then is kept for 20 minutes.
(III) advantageous effects
The invention provides a preparation method of a tantalum-doped large-area two-dimensional niobium disulfide material. Compared with the prior art, the method has the following beneficial effects: the method has the advantages of simple process, high efficiency, convenience, good repeatability and large-size thin-layer sample acquisition. Compared with other traditional preparation methods, such as a mechanical stripping method, the method has the advantages of high deposition rate, controllable crystal structure and surface form, good repeatability and the like.
Drawings
FIG. 1 is an optical microscope photograph of a large-area two-dimensional niobium disulfide material in example 1 of the present invention;
FIG. 2 is a diagram showing the distribution of elements in a large-area two-dimensional niobium disulfide material in example 1 of the present invention;
FIG. 3 is a low transmission electron micrograph of a large area two-dimensional niobium disulfide material of example 1 in accordance with the present invention;
FIG. 4 is a high resolution transmission electron micrograph of a large area two dimensional niobium disulfide material of example 1 in accordance with the present invention;
FIG. 5 is a selected area electron diffraction pattern of a large area two-dimensional niobium disulfide material of example 1 in accordance with the present invention;
FIG. 6 is an optical microscope photograph of a large area two-dimensional niobium disulfide material doped with tantalum in example 2 of the present invention;
FIG. 7 is a diagram showing the distribution of elements in a tantalum-doped large-area two-dimensional niobium disulfide material in example 2 of the present invention;
FIG. 8 is a low transmission electron micrograph of a tantalum-doped large area two dimensional niobium disulfide material of example 2 of the present invention;
FIG. 9 is a high resolution transmission electron micrograph of tantalum-doped large area two dimensional niobium disulfide material of example 2 of the present invention;
FIG. 10 is an electron diffraction pattern of selected areas of a tantalum-doped large area two-dimensional niobium disulfide material in example 2 of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
Referring to fig. 1-5, a large area two-dimensional niobium disulfide material is formed by the steps of:
step S1: sticking a 3M adhesive tape on the front and back surfaces of the fluorophlogopite in an ultra-clean workbench, tearing off the surface layers of the front and back surfaces of the fluorophlogopite by a method similar to mechanical stripping, and placing the fluorophlogopite in an electronic drying oven for storage and standby; ultrasonic cleaning silicon wafer with acetone, isopropanol and ethanol, and cutting into 35 × 13mm with silicon knife2Then placing the silicon wafer in a silicon wafer box for standby;
step S2: respectively weighing 18mg of niobium pentoxide powder, 180mg of ammonium chloride powder and 200mg of sulfur powder, putting the niobium pentoxide powder and the ammonium chloride into a mortar, grinding until the niobium pentoxide powder and the ammonium chloride are uniformly mixed, putting the mixture into a quartz boat A, and then putting the sulfur powder into a quartz boat B;
step S3: the processed fluorophlogopite and the silicon chip are reversely buckled above the quartz boat A and pushed into the quartz tube, so that the middle position of the quartz boat A is opposite to a thermocouple close to a downstream temperature zone, and the quartz boat B is also placed in the position which is 25cm away from the mica in the quartz tube of the tube furnace;
step S4: and (3) carrying out gas washing operation on the quartz tube: firstly, a vacuum mechanical pump is used for vacuumizing a quartz tube until the air pressure is 1Pa, then 400sccm of nitrogen is introduced for 10 minutes, the air suction-ventilation process is repeated for 3 times, and the air content in the quartz tube is reduced to a very low level;
step S5: closing nitrogen, introducing mixed gas of 20sccm, heating the quartz boat A to 800 ℃ for 40 minutes, then preserving heat for 20 minutes, heating the quartz boat B to 300 ℃ for 40 minutes, and then preserving heat for 20 minutes;
step S6: and opening the furnace cover immediately after the heat preservation is finished, quickly cooling, and taking out the mica after the temperature of the furnace tube is reduced to room temperature to obtain the large-area two-dimensional niobium disulfide material.
Example 2
Please refer to fig. 6-10: a tantalum-doped large-area two-dimensional niobium disulfide material is prepared by the following steps:
step S1: sticking a 3M adhesive tape on the front and back surfaces of the fluorophlogopite in an ultra-clean workbench, tearing off the surface layers of the front and back surfaces of the fluorophlogopite by a method similar to mechanical stripping, and placing the fluorophlogopite in an electronic drying oven for storage and standby; ultrasonic cleaning silicon wafer with acetone, isopropanol and ethanol, and cutting into 35 × 13mm with silicon knife2Then placing the silicon wafer in a silicon wafer box for standby;
step S2: respectively weighing 9mg of niobium pentoxide powder, 9mg of tantalum pentoxide powder, 180mg of ammonium chloride powder and 200mg of sulfur powder, putting the niobium pentoxide, the tantalum pentoxide and the ammonium chloride into a mortar, grinding until the niobium pentoxide, the tantalum pentoxide and the ammonium chloride are uniformly mixed, putting the mixture into a quartz boat A, and then putting the sulfur powder into a quartz boat B;
step S3: the processed fluorophlogopite and the silicon chip are reversely buckled above the quartz boat A and pushed into the quartz tube, so that the middle position of the quartz boat A is opposite to a thermocouple close to a downstream temperature zone, and the quartz boat B is also placed in the position which is 25cm away from the mica in the quartz tube of the tube furnace;
step S4: and (3) carrying out gas washing operation on the quartz tube: firstly, a vacuum mechanical pump is used for vacuumizing a quartz tube until the air pressure is 1Pa, then 400sccm of nitrogen is introduced for 10 minutes, the air suction-ventilation process is repeated for 3 times, and the air content in the quartz tube is reduced to a very low level;
step S5: closing nitrogen, introducing mixed gas of 20sccm, heating the quartz boat A to 800 ℃ for 40 minutes, then preserving heat for 20 minutes, heating the quartz boat B to 300 ℃ for 40 minutes, and then preserving heat for 20 minutes;
step S6: and opening the furnace cover immediately after the heat preservation is finished, quickly cooling, and taking out the mica after the temperature of the furnace tube is reduced to room temperature to obtain the tantalum-doped large-area two-dimensional niobium disulfide material.
With reference to fig. 1 and 6, a maximum of 115 μm for the large-area two-dimensional niobium disulfide material prepared in example 1, and a maximum of 112 μm for the tantalum-doped large-area two-dimensional niobium disulfide material prepared in example 2, with a larger size, are obtained.
And those not described in detail in this specification are well within the skill of those in the art.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (5)
1. A preparation method of a tantalum-doped large-area two-dimensional niobium disulfide material is characterized by comprising the following steps: the tantalum-doped large-area two-dimensional niobium disulfide material comprises the following raw materials: a first source substance, a second source substance, a third source substance, an additive, a first growth substrate and a second growth substrate;
the preparation method of the tantalum-doped large-area two-dimensional niobium disulfide material comprises the following steps:
step S1: tearing off the surface layers of the front surface and the back surface of the first growth substrate, and storing for later use; sequentially using acetone, isopropanol and ethanol to ultrasonically clean the second growth substrate, and then cutting for later use;
step S2: respectively weighing a source substance I, a source substance III, an additive and a source substance II, putting the source substance I, the source substance III and the additive into a mortar, grinding until the source substance I, the source substance III and the additive are uniformly mixed, putting the mixture into a quartz boat A, and then putting the source substance II into a quartz boat B;
step S3: the treated first growth substrate and the treated second growth substrate are reversely buckled above the quartz boat A and pushed into the quartz tube to ensure that the middle position of the quartz boat A is opposite to a thermocouple close to a downstream temperature zone, and the quartz boat B is also placed in the position which is 25cm away from the mica in the quartz tube of the tube furnace;
step S4: and (3) carrying out gas washing operation on the quartz tube: firstly, vacuumizing a quartz tube, introducing nitrogen, and repeating the air extraction-ventilation process for 3 times;
step S5: closing the nitrogen, introducing mixed gas, and heating and insulating the quartz boat A and the quartz boat B;
step S6: and opening the furnace cover immediately after the heat preservation is finished, quickly cooling, and taking out the mica after the temperature of the furnace tube is reduced to room temperature to obtain the tantalum-doped large-area two-dimensional niobium disulfide material.
2. A method as claimed in claim 1The preparation method of the tantalum-doped large-area two-dimensional niobium disulfide material is characterized by comprising the following steps of: the first source substance is niobium pentoxide, the second source substance is sulfur powder, the third source substance is tantalum pentoxide, the additive is ammonium chloride, the first growth substrate is fluorophlogopite, the second growth substrate is a silicon wafer, and the silicon wafer is SiO2a/Si silicon wafer.
3. The method for preparing the tantalum-doped large-area two-dimensional niobium disulfide material according to claim 1, wherein the method comprises the following steps: step S2, the dosage ratio of the source substance I, the source substance II, the source substance III and the additive is 9 mg: 200 mg: 9 mg: 180 mg.
4. The method for preparing the tantalum-doped large-area two-dimensional niobium disulfide material according to claim 1, wherein the method comprises the following steps: step S5, the mixed gas is nitrogen and hydrogen according to the volume ratio of 95: 5, and mixing.
5. The method for preparing the tantalum-doped large-area two-dimensional niobium disulfide material according to claim 1, wherein the method comprises the following steps: the heating and heat preservation in the step S5 comprises the following specific steps: the quartz boat A is heated to 800 ℃ at a heating rate of 20 ℃/min and then is kept for 20 minutes, and the quartz boat B is heated to 300 ℃ at a heating rate of 7.5 ℃/min and then is kept for 20 minutes.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107557754A (en) * | 2017-07-21 | 2018-01-09 | 杭州电子科技大学 | A kind of preparation method of tungsten disulfide film |
| CN108179399A (en) * | 2018-01-23 | 2018-06-19 | 北京大学 | A kind of method that chemical vapour deposition technique prepares tantalum disulfide |
| CN108559972A (en) * | 2018-01-29 | 2018-09-21 | 中国科学院重庆绿色智能技术研究院 | A kind of preparation method and product of the large area single layer tungsten disulfide film based on aumospheric pressure cvd |
| CN109023297A (en) * | 2018-08-19 | 2018-12-18 | 天津大学 | A kind of preparation method of large scale single layer selenium subregion doping tungsten disulfide thin-film material |
| CN110155959A (en) * | 2019-05-31 | 2019-08-23 | 西北工业大学 | The confinement chemical gas-phase deposition process for preparing of two-dimentional transition metal alloy chalcogenide |
| CN110777356A (en) * | 2019-11-12 | 2020-02-11 | 天津理工大学 | Rare earth doped molybdenum sulfide monomolecular layer film and preparation method thereof |
| CN110950386A (en) * | 2019-12-09 | 2020-04-03 | 北京大学 | Preparation method of transition metal sulfide nanosheet powder |
-
2021
- 2021-04-09 CN CN202110382902.6A patent/CN113122819B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107557754A (en) * | 2017-07-21 | 2018-01-09 | 杭州电子科技大学 | A kind of preparation method of tungsten disulfide film |
| CN108179399A (en) * | 2018-01-23 | 2018-06-19 | 北京大学 | A kind of method that chemical vapour deposition technique prepares tantalum disulfide |
| CN108559972A (en) * | 2018-01-29 | 2018-09-21 | 中国科学院重庆绿色智能技术研究院 | A kind of preparation method and product of the large area single layer tungsten disulfide film based on aumospheric pressure cvd |
| CN109023297A (en) * | 2018-08-19 | 2018-12-18 | 天津大学 | A kind of preparation method of large scale single layer selenium subregion doping tungsten disulfide thin-film material |
| CN110155959A (en) * | 2019-05-31 | 2019-08-23 | 西北工业大学 | The confinement chemical gas-phase deposition process for preparing of two-dimentional transition metal alloy chalcogenide |
| CN110777356A (en) * | 2019-11-12 | 2020-02-11 | 天津理工大学 | Rare earth doped molybdenum sulfide monomolecular layer film and preparation method thereof |
| CN110950386A (en) * | 2019-12-09 | 2020-04-03 | 北京大学 | Preparation method of transition metal sulfide nanosheet powder |
Non-Patent Citations (3)
| Title |
|---|
| TAKASHI YANASE ET AL.: "Chemical vapor deposition of NbS2 from a chloride source", 《CRYSTAL GROWTH & DESIGN》 * |
| TAKASHI YANASE ET AL.: "Synthesis of Mo1−xNbxS2 thin films by separate-flow chemical vapor", 《THIN SOLID FILMS》 * |
| ZIQIAN WANG ET AL.: "Chemical Vapor Deposition of", 《SCIENTIFIC REPORTS》 * |
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