CN113114149A - In-plane stretching mode radio frequency micro-electromechanical resonator - Google Patents
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- 239000004065 semiconductor Substances 0.000 claims description 15
- 229910003460 diamond Inorganic materials 0.000 claims description 10
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- 239000002210 silicon-based material Substances 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 7
- 244000126211 Hericium coralloides Species 0.000 claims description 3
- 229910003327 LiNbO3 Inorganic materials 0.000 claims description 3
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 3
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- H—ELECTRICITY
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
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Abstract
The present disclosure provides an in-plane tensile mode radio frequency microelectromechanical resonator, comprising: the resonance unit works in an in-plane stretching mode; defining an edge position of the resonance unit, which generates displacement change due to resonance vibration in an in-plane tensile mode, as a vibration part; a support unit including a support beam and a base; the supporting beam comprises a straight beam and a frame-shaped beam which form a composite structure; the supporting beam is used for supporting the resonance unit; the base is connected with the supporting beam and used for maintaining the suspension of the resonance unit; and the electrode is arranged at the vibration part of the resonance unit and used for driving and detecting the transduction structure for the resonance vibration of the resonance unit. The in-plane stretching mode radio frequency micro-electromechanical resonator provided by the invention is based on an in-plane stretching mode, and has low thermoelastic loss and dielectric loss; the supporting beam is of a composite structure, so that the supporting loss of the resonator is reduced, the Q value is further improved, and the composite structure can be used for constructing various high-performance radio frequency devices.
Description
Technical Field
The present disclosure relates to the field of Radio Frequency Micro-Electro-Mechanical systems (RF-MEMS), and more particularly to an in-plane tensile mode RF MEMS resonator.
Background
Wireless communication systems are becoming more sophisticated with higher frequencies, higher modes, smaller sizes, higher integration, and lower power consumption. The traditional resonator can not completely meet the requirements of the future wireless communication system on frequency, Q value, volume and power consumption. The MEMS resonance device has the advantages of high Q value, low power consumption, small size, integration, low cost and the like, is one of ideal choices of a future wireless communication system, and has wide application prospects.
The quality factor (Q value) is an important performance indicator for MEMS resonators. The high-Q resonator has higher precision and frequency stability, and is easy to realize a high-performance oscillator. The filter composed of the high-Q-value resonators has excellent narrow-band filtering performance of low insertion loss, high out-of-band rejection ratio and high steepness, can reduce the gain requirement of a system on a rear-end amplifier, and can realize effective passband selection under the trends of increasing signal paths and narrowing frequency spectrum intervals in the wireless communication technology.
In implementing the disclosed concept, the inventors found that there are at least the following problems in the related art: the Q value of the resonator in the prior art is difficult to meet the actual requirement, and the application of the resonator is influenced.
Disclosure of Invention
In view of the above, the present disclosure provides an in-plane tensile mode radio frequency microelectromechanical resonator, so as to at least partially solve one of the above mentioned technical problems.
The present disclosure provides an in-plane tensile mode radio frequency microelectromechanical resonator, comprising:
the resonance unit works in an in-plane stretching mode; wherein, the edge position of the resonance unit, which generates displacement change by resonance vibration in the in-plane tension mode, is defined as a vibration part;
a support unit including a support beam and a base; wherein, the support beam comprises a straight beam and a frame-shaped beam which form a composite structure; wherein the support beam is used for supporting the resonance unit; wherein, the base is connected with the support beam and is used for maintaining the suspension of the resonance unit;
and an electrode arranged at the vibration part of the resonance unit and used for driving and detecting the transduction structure of the resonance unit for performing resonance vibration.
According to an embodiment of the present disclosure, the resonance unit includes a plurality of;
the in-plane tensile mode radio frequency micro-electromechanical resonator further comprises:
the coupling beam is used for coupling two adjacent resonance units; wherein the coupling beam is connected to the vibration part of the resonance unit.
According to the embodiment of the disclosure, the coupling beams and the resonance units are linearly arranged to form a one-dimensional topological structure; wherein, one end of the straight beam is connected to the resonance unit; the other end of the straight beam is connected with the frame-shaped beam; the frame beam is connected to the base.
According to the embodiment of the disclosure, the coupling beam and the resonance unit are arranged in a nonlinear manner to form a two-dimensional topological structure; wherein, one end of the straight beam is connected to the coupling beam; the other end of the straight beam is connected with the frame-shaped beam; the frame beam is connected to the base.
According to an embodiment of the present disclosure, the coupling beam is connected to a center position of the vibration part of the resonance unit.
According to the embodiment of the present disclosure, the resonance unit has an axisymmetric structure; wherein the in-plane shape of the resonance unit includes at least one of a circle, an ellipse, and a rounded even-numbered polygon.
According to an embodiment of the present disclosure, the support beam has an axisymmetric structure; wherein, the frame structure of the supporting beam comprises at least one of a rectangular frame structure, an arc frame structure and a trapezoidal frame structure; wherein the material of the support beam comprises at least one of metal, silicon-based material, SiC, diamond, III-V group semiconductor and piezoelectric material; wherein, the base is in an axisymmetrical structure; wherein, the inner geometrical shape of the base comprises at least one of polygon, arc and frame.
According to the embodiment of the present disclosure, the non-vibration portion of the resonance unit includes a displacement node; wherein the straight beam of the support beam is connected to a displacement node of the resonance unit.
According to an embodiment of the present disclosure, the coupling beam includes a straight coupling beam and/or a curved coupling beam;
wherein the in-plane geometry of the direct coupling beam comprises at least one of a square, a rectangle, and a ring;
wherein, the bending coupling beam is formed by bending a straight coupling beam by taking a connecting point of the straight coupling beam and the straight beam as a bending point;
wherein, the bending included angle of the bending coupling beam is 0-180 degrees; the material of the coupling beam comprises at least one of silicon-based material, diamond, SiC, III-V group semiconductor and piezoelectric material.
According to the embodiment of the present disclosure, the electrode shape includes at least one of a flat plate, an interdigital, a comb tooth, and a sawtooth; wherein the electrode is made of silicon-based material, AlN, ZnO or LiNbO3At least one of SiC, diamond, a group III semiconductor, a group V semiconductor, and a metal; the transduction mechanism between the resonance unit and the electrode comprises a piezoelectric transduction mechanism or an electrostatic transduction mechanism; when a piezoelectric transduction mechanism is adopted, the electrodes are in direct contact with the resonance unit; when an electrostatic transduction mechanism is adopted, the resonance unit and the electrode are provided with a dielectric layer with a micro-nano scale interval; wherein, the dielectric layer is configured not to be filled with dielectric material, partially filled with dielectric material or completely filled with dielectric material; wherein the dielectric material comprises HfO2、SiNxAnd a composite dielectric material.
According to the embodiment of the disclosure, the in-plane stretching mode is realized by the in-plane stretching mode radio frequency micro-electromechanical resonator, and the supporting beam adopts a composite structure consisting of a straight beam and a frame-shaped beam. Therefore, compared with the prior art resonator, the Q value is higher, the thermoelastic loss and the dielectric loss are lower, and the support loss is lower.
In summary, the in-plane tensile mode radio frequency micro-electromechanical resonator can be used for constructing radio frequency devices such as high-performance oscillators and filters, and has practical potential.
Drawings
The above and other objects, features and advantages of the present disclosure will become more apparent from the following description of embodiments of the present disclosure with reference to the accompanying drawings, in which:
FIG. 1 schematically illustrates a structural diagram of an in-plane tensile mode radio frequency microelectromechanical resonator according to an embodiment of the present disclosure;
figure 2 schematically illustrates a first order in-plane tensile mode schematic diagram of an in-plane tensile mode radio frequency microelectromechanical resonator provided in accordance with an embodiment of the present disclosure;
fig. 3 schematically shows a third-order in-plane tensile mode schematic diagram of the in-plane tensile mode radio frequency microelectromechanical resonator in fig. 1 operating in an in-plane tensile mode;
fig. 4 schematically shows a structural diagram of an in-plane tensile mode radio frequency microelectromechanical resonator according to another embodiment of the present disclosure.
In the above figures, the reference numerals have the following meanings:
1. a resonance unit; 2. a support beam; 3. a base; 4. a direct coupling beam; 5. an electrode; 6. a dielectric layer; 7. bending the coupling beam; 8. bending the included angle; 9. a first in-plane tensile mode; 10. third order in-plane tensile mode.
Detailed Description
The quality factor (Q value) is an important performance indicator for MEMS resonators. The high-Q resonator has higher precision and frequency stability, and is easy to realize a high-performance oscillator. The Q value reflects the degree of energy dissipation of the resonator, and can be classified into thermoelastic loss (TED), support loss, dielectric loss, and the like according to the generation mechanism of energy loss. Therefore, the energy loss of the MEMS resonator can be suppressed from the aspects of thermoelastic loss, support loss, dielectric loss, and the like, and the Q value can be effectively improved.
The present disclosure is described in further detail below with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the disclosure and not restrictive thereof, and that various features described in the embodiments may be combined to form multiple alternatives. It should be further noted that, for the convenience of description, only some of the structures relevant to the present disclosure are shown in the drawings, not all of them.
The present disclosure provides an in-plane tensile mode radio frequency microelectromechanical resonator, comprising:
the resonance unit works in an in-plane stretching mode; wherein, the edge position of the resonance unit, which generates displacement change by resonance vibration in an in-plane stretching mode, is defined as a vibration part; a support unit including a support beam and a base; wherein, the support beam comprises a straight beam and a frame-shaped beam which form a composite structure; wherein the support beam is used for supporting the resonance unit; the base is connected with the support beam and used for maintaining the suspension of the resonance unit; and the electrode is arranged at the vibration part of the resonance unit and used for driving and detecting the transduction structure for the resonance vibration of the resonance unit.
By utilizing the in-plane stretching mode radio frequency micro-electromechanical resonator provided by the disclosure, the effect of high Q value, low thermal elastic loss, low dielectric loss and low support loss can be realized by working in an in-plane stretching mode and adopting the support beam formed by compounding the straight beam and the frame-shaped beam.
In summary, the high-Q-value in-plane stretching mode radio frequency micro electromechanical resonator can be used for constructing radio frequency devices such as high-performance oscillators and filters, and has practical potential.
According to an embodiment of the present disclosure, the resonance unit is an axisymmetric structure; wherein the in-plane geometry of the resonant cells comprises at least one of a circle, an ellipse, a rounded even polygon.
According to an embodiment of the present disclosure, the material of the resonance unit includes at least one of metal, silicon-based material, diamond, group iii semiconductor, group v semiconductor, piezoelectric material.
Fig. 1 schematically shows a structural diagram of an in-plane tensile mode radio frequency microelectromechanical resonator according to an embodiment of the present disclosure.
As shown in fig. 1, the in-plane tensile mode radio frequency microelectromechanical resonator includes two resonant cells 1.
As shown in fig. 1, the in-plane geometry of the resonant unit 1 is a rounded rectangle, and the two resonant units 1 are identical in structure and size.
According to the embodiment of the disclosure, the four corners of the resonance unit are rounded, so that energy distribution can be optimized, and support loss is reduced. It should be noted that the structure and size of the resonance unit define the resonance frequency of the resonator, and the size and structure of the resonance unit can be set according to the actual situation, which is not described herein again.
Fig. 2 schematically illustrates a first-order in-plane tensile mode diagram according to an embodiment of the disclosure.
As shown in fig. 2, the single resonant cell operates in a first-order in-plane tensile mode 9, and as can be seen from fig. 2, the cross-sectional shape of the resonant cell is rectangular, and the resonant cell includes two symmetrical long sides and two symmetrical short sides; the resonance unit performs compression and expansion movements in a direction parallel to the short side, namely, two symmetrical long sides generate larger displacement, and the two symmetrical long sides are defined as vibration parts. While the resonance unit is displaced by a small amount in a direction perpendicular to the short side. The displacement node of the resonator element 1 is located at the centre of symmetry of the short side of the resonator element 1.
Fig. 3 schematically shows a third-order in-plane tensile mode diagram of the in-plane tensile mode radio frequency microelectromechanical resonator of fig. 1 operating in an in-plane tensile mode.
As shown in fig. 1 and 3, two resonant units 1 in fig. 1 operate in a third-order in-plane stretching mode 10, and the two resonant units 1 in fig. 3 vibrate in resonance in the same way as the single resonant unit 1 in fig. 2, and thus the details are not repeated here.
According to the embodiment of the disclosure, the supporting unit comprises a supporting beam and a base; wherein, the supporting beam is in an axisymmetric structure and is formed by compounding a straight beam and a frame-shaped beam; the frame structure of the supporting beam comprises at least one of a rectangular frame structure, an arc frame structure and a trapezoidal frame structure; wherein, the base is in an axisymmetrical structure; wherein the in-plane geometry of the base comprises at least one of a polygon, a sector, and a frame.
As shown in fig. 1, the support unit includes a support beam 2 and a base 3; wherein, the supporting beam 2 is formed by compounding a straight beam and a trapezoidal frame-shaped beam which have rectangular inner geometrical shapes respectively; wherein, one end of the straight beam is connected with the displacement node of the resonance unit 1, the other end is connected with one trapezoid bottom edge of the trapezoid frame-shaped beam, such as the upper trapezoid bottom edge, and the other trapezoid bottom edge of the trapezoid frame-shaped beam, such as the lower trapezoid bottom edge, is connected with the base 3.
It should be noted that the supporting beam is connected to the displacement node of the resonant unit, has the same vibration frequency as the resonant unit, and is matched with the mode of the resonant unit, so as to reduce the energy loss at the connection point and improve the Q value.
According to the embodiments of the present disclosure, compared to the single beam structure of the support beam in the prior art, the support beam of the present disclosure adopts a composite structure of a straight beam and a frame-shaped beam, and due to discontinuity of acoustic impedance on a path from the support beam of the composite structure to the resonance unit and the base, a part of elastic waves are reflected on the support beam of the composite structure and returned to the resonance unit, reducing energy dissipated to the support base, resulting in lower support loss.
As shown in fig. 1, the in-plane geometry of the base 3 is semi-circular.
It should be noted that the base 3 needs to be sufficiently bulky to have a sufficiently high stability.
According to an embodiment of the present disclosure, the material of the support beam and the base includes at least one of metal, silicon-based material, diamond, group iii semiconductor, group v semiconductor, and piezoelectric material.
According to an embodiment of the present disclosure, the resonance unit includes a plurality; the in-plane tensile mode radio frequency microelectromechanical resonator further comprises: the coupling beam is used for coupling the two adjacent resonance units; wherein, the coupling beam is connected to the vibrating portion of the resonance unit.
According to the embodiment of the disclosure, the coupling beams and the resonance units are linearly arranged to form a one-dimensional topological structure; wherein, one end of the straight beam is connected to the resonance unit; the other end of the straight beam is connected with the frame-shaped beam; the frame beam is connected with the base.
According to the embodiment of the disclosure, the coupling beams and the resonance units are arranged in a nonlinear manner to form a two-dimensional topological structure; wherein, one end of the straight beam is connected to the coupling beam; the other end of the straight beam is connected with the frame-shaped beam; the frame beam is connected with the base.
According to an embodiment of the present disclosure, the coupling beam is connected to a central position of the vibration part of the resonance unit.
According to an embodiment of the present disclosure, the coupling beam comprises a straight coupling beam and/or a curved coupling beam; wherein the in-plane geometry of the directly coupled beam comprises at least one of a square, a rectangle, and a ring; the bending coupling beam is formed by bending the straight coupling beam by taking a connecting point of the straight coupling beam and the straight beam as a bending point; wherein the bending included angle of the bending coupling beam is 0-180 degrees; wherein, the material of the coupling beam comprises at least one of silicon-based material, diamond, SiC, III-V group semiconductor and piezoelectric material.
As shown in fig. 1, two adjacent resonance units 1 are connected to the center position of the vibrating portion where the long side of the two adjacent resonance units 1 is located by a straight coupling beam 4 having a rectangular geometric shape in one surface; the direct coupling beam 4 and the resonance unit 1 are linearly arranged to form a one-dimensional topological structure.
It should be noted that the number of coupling beams between two adjacent resonant units may also be 2, 3 or more.
It should be noted that the directly-coupled beam operates in a length stretching mode, and has the same vibration frequency as the resonant unit, so as to realize effective transmission of elastic waves.
According to an embodiment of the present disclosure, the electrode shape includes at least one of a flat plate, an interdigital, a comb tooth, and a saw tooth; wherein the electrode material comprises silicon-based material, AlN, ZnO, LiNbO3At least one of diamond, group iii semiconductor, group v semiconductor, and metal; the transduction mechanism between the resonance unit and the electrode comprises a piezoelectric transduction mechanism or an electrostatic transduction mechanism; when a piezoelectric transduction mechanism is adopted between the resonance unit and the electrode, the electrode is directly contacted with the resonance unit; when an electrostatic transduction mechanism is adopted between the resonance unit and the electrode, the resonance unit and the electrode are provided with a dielectric layer with a micro-nano scale interval; wherein the dielectric layer is configured not to be filledA dielectric material, a partially filled dielectric material, or a fully filled dielectric material; wherein the dielectric material comprises HfO2、SiNxAnd a composite dielectric material.
As shown in fig. 1, the electrode 5 is a flat plate having a rectangular in-plane geometry; the electrode 5 is arranged on the outer side of the vibrating part where the long edge of the resonance unit 1 is located and is parallel to the long edge of the resonance unit 1; wherein, there are two electrodes 5 on one side of the straight coupling beam 4 connecting the vibration part of the resonance unit 1, and distributed on both sides of the straight coupling beam 4.
It should be noted that, when the plurality of resonance units are linearly arranged in one dimension, the number of the electrodes on the side where the vibration portions of the resonance units at the two ends are located is one, and the number of the electrodes on the side where the vibration portions of the resonance units connected by the coupling beam are located is two, and the electrodes are disposed on the two sides of the coupling beam.
The electrodes are provided on the side surfaces of the resonator vibrating portion, and the resonator can be driven and detected efficiently.
According to the embodiment of the disclosure, the radio frequency micro-electromechanical resonator in the in-plane stretching mode adopts an array arrangement mode to increase the electrode coverage area, greatly improve the electromechanical conversion efficiency, reduce the insertion loss and improve the upper limit of Q value detection.
According to the embodiment of the present disclosure, as shown in fig. 1, the electrode 5 and the resonance unit 1 employ an electrostatic transduction mechanism; wherein a dielectric layer 6 is present between the electrode 5 and the resonator element 1.
It is noted that the thickness of the dielectric layer between the electrodes and the resonator element is in the range of zero to a few micrometers.
Fig. 4 schematically shows a structural diagram of an in-plane tensile mode radio frequency microelectromechanical resonator according to another embodiment of the present disclosure.
As shown in fig. 1 and 4, parts and materials of the in-plane tensile mode rf mems resonator according to another embodiment of the disclosure in fig. 4 are the same as or similar to those of the in-plane tensile mode rf mems resonator according to an embodiment of the disclosure in fig. 1, and are not described herein again. The difference lies in that: the coupling beam connecting between two adjacent resonance units 1 may also be a bending coupling beam 7.
According to the embodiment of the disclosure, the coupling beams and the resonance units are arranged in a nonlinear manner to form a two-dimensional topological structure; wherein, one end of the straight beam is connected to the coupling beam; the other end of the straight beam is connected with the frame-shaped beam; the frame beam is connected with the base.
As shown in fig. 4, two ends of the bending coupling beam 7 are connected to the central positions of the vibrating portions of two adjacent resonance units 1, and the two resonance units 1 are arranged in a nonlinear manner to form a two-dimensional topological structure.
As shown in fig. 4, one end of the straight beam of the support beam 2 is connected to the bending point of the bending coupling beam, the other end of the straight beam is connected to the middle point of the upper bottom edge of the trapezoid frame-shaped structure, and the lower bottom edge of the trapezoid frame-shaped beam is connected to the base 3.
As shown in fig. 4, the bending coupling beam 7 has a bending angle 8.
It should be noted that the angle range of the bending included angle of the bending coupling beam includes 0 ° to 180 °.
The above description is only exemplary of the present disclosure and should not be taken as limiting the disclosure, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present disclosure should be included in the scope of protection of the present disclosure.
Claims (10)
1. An in-plane tensile mode radio frequency microelectromechanical resonator, comprising:
the resonance unit works in an in-plane stretching mode; wherein an edge position at which the resonance unit generates a change in displacement amount due to resonance vibration in the in-plane tensile mode is defined as a vibrating portion;
a support unit including a support beam and a base; wherein the support beams comprise straight beams and frame-shaped beams forming a composite structure; wherein the support beam is used for supporting the resonance unit; the base is connected with the supporting beam and used for maintaining the suspension of the resonance unit;
and the electrode is arranged at the vibration part of the resonance unit and is used for driving and detecting the transduction structure for the resonance vibration of the resonance unit.
2. The in-plane tensile mode radio frequency microelectromechanical resonator of claim 1, wherein the resonant unit comprises a plurality;
the in-plane tensile mode radio frequency microelectromechanical resonator further comprises:
the coupling beam is used for coupling two adjacent resonance units; wherein the coupling beam is connected to a vibration part of the resonance unit.
3. The in-plane tensile mode radio frequency microelectromechanical resonator of claim 2, characterized in that the coupling beam and the resonance unit are linearly arranged to form a one-dimensional topological structure; wherein one end of the straight beam is connected to the resonance unit; the other end of the straight beam is connected with the frame-shaped beam; the frame beam is connected with the base.
4. The in-plane tensile mode radio frequency microelectromechanical resonator of claim 2, characterized in that the coupling beam and the resonance unit are arranged nonlinearly to form a two-dimensional topology; one end of the straight beam is connected to the coupling beam; the other end of the straight beam is connected with the frame-shaped beam; the frame beam is connected with the base.
5. The in-plane tensile mode radio frequency microelectromechanical resonator of claim 3 or 4, characterized in that the coupling beam is connected to a central position of the vibrating portion of the resonance unit.
6. The in-plane tensile mode radio frequency microelectromechanical resonator of claim 1, characterized in that the resonating element is an axisymmetric structure; wherein the in-plane shape of the resonant cells comprises at least one of a circle, an ellipse, and a rounded even-numbered polygon.
7. The in-plane tensile mode radio frequency microelectromechanical resonator of claim 1, characterized in that the support beam is an axisymmetric structure; the frame-shaped structure of the supporting beam comprises at least one of a rectangular frame structure, an arc frame structure and a trapezoidal frame structure; wherein the material of the support beam comprises at least one of metal, silicon-based material, SiC, diamond, III-V semiconductor and piezoelectric material; wherein the base is in an axisymmetrical structure; wherein the in-plane geometry of the base comprises at least one of a polygon, an arc, and a frame.
8. The in-plane tensile mode radio frequency microelectromechanical resonator of claim 3, characterized in that the non-vibrating portion of the resonating element includes a displacement node thereon; wherein the straight beam of the support beam is connected to a displacement node of the resonance unit.
9. The in-plane tensile mode radio frequency microelectromechanical resonator of claim 4, characterized in that the coupling beam comprises a straight coupling beam and/or a curved coupling beam;
wherein the in-plane geometry of the directly coupled beam comprises at least one of a square, a rectangle, and a circle;
the bending coupling beam is formed by bending a straight coupling beam by taking a connecting point of the straight coupling beam and the straight beam as a bending point;
wherein a bending included angle of the bending coupling beam is 0-180 degrees;
wherein the material of the coupling beam comprises at least one of silicon-based material, diamond, SiC, III-V semiconductor and piezoelectric material.
10. The in-plane tensile mode radio frequency microelectromechanical resonator of claim 1, characterized in that the electrode shape comprises at least one of a plate, an interdigital, a comb tooth, a saw tooth; wherein the electrode material comprises silicon-based material, AlN, ZnO, LiNbO3At least one of SiC, diamond, group III semiconductor, group V semiconductor, and metal; wherein the resonance unit and the electrode are exchangedThe energy mechanism comprises a piezoelectric transduction mechanism or an electrostatic transduction mechanism; when a piezoelectric transduction mechanism is adopted, the electrode is in direct contact with the resonance unit; when an electrostatic transduction mechanism is adopted, the resonance unit and the electrode are provided with a dielectric layer with a micro-nano scale interval; wherein the dielectric layer is configured to be unfilled with dielectric material, partially filled with dielectric material, or completely filled with dielectric material; wherein the dielectric material comprises HfO2、SiNxAnd a composite dielectric material.
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| WO2023186168A1 (en) * | 2022-04-01 | 2023-10-05 | 华为技术有限公司 | Resonator, electronic component and resonant system |
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| JP2010056764A (en) * | 2008-08-27 | 2010-03-11 | Seiko Instruments Inc | Mems vibrator |
| JP2011137637A (en) * | 2009-12-25 | 2011-07-14 | Nec Tokin Corp | Surface acoustic wave resonator type vibration sensor |
| CN104052430A (en) * | 2013-03-15 | 2014-09-17 | 英飞凌技术德累斯顿有限责任公司 | Microelectromechanical resonators |
| CN111490741A (en) * | 2019-01-29 | 2020-08-04 | 中国科学院半导体研究所 | Arrayed plane shear mode radio frequency micro-electromechanical resonator |
| CN112422097A (en) * | 2019-08-20 | 2021-02-26 | 中国科学院半导体研究所 | Multi-beam structure combined radio frequency micro-electromechanical system resonator and application |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023186168A1 (en) * | 2022-04-01 | 2023-10-05 | 华为技术有限公司 | Resonator, electronic component and resonant system |
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