CN113113539A - Capacitor structure, semiconductor device and capacitor structure preparation method - Google Patents
Capacitor structure, semiconductor device and capacitor structure preparation method Download PDFInfo
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- CN113113539A CN113113539A CN202110381411.XA CN202110381411A CN113113539A CN 113113539 A CN113113539 A CN 113113539A CN 202110381411 A CN202110381411 A CN 202110381411A CN 113113539 A CN113113539 A CN 113113539A
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- 239000003990 capacitor Substances 0.000 title claims abstract description 52
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 title abstract description 6
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 51
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 49
- 229910052751 metal Inorganic materials 0.000 claims abstract description 45
- 239000002184 metal Substances 0.000 claims abstract description 45
- 229910021341 titanium silicide Inorganic materials 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 13
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 11
- 239000010941 cobalt Substances 0.000 claims description 11
- 229910017052 cobalt Inorganic materials 0.000 claims description 11
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 11
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims description 11
- 229910021334 nickel silicide Inorganic materials 0.000 claims description 11
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 11
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 10
- 239000002019 doping agent Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 98
- 125000004429 atom Chemical group 0.000 description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- 239000007789 gas Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 7
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 6
- 238000005137 deposition process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000005336 cracking Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
The invention discloses a capacitor structure, a semiconductor device and a preparation method of the capacitor structure, wherein the capacitor structure comprises a lower electrode, a dielectric structure, an upper electrode, a first conductive structure and a conductive layer doped with doping atoms, which are sequentially formed on the lower electrode, the first conductive structure is arranged between the upper electrode and the conductive layer, the first conductive structure can comprise a first metal silicide, the first metal silicide has higher work function, the leakage of the doping atoms in the conductive layer to the upper electrode can be effectively reduced, in addition, the contact resistance between the upper electrode and the conductive layer can be effectively reduced by arranging the first conductive structure, and the performance of the device can be effectively improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a capacitor structure, a semiconductor device and a capacitor structure preparation method.
Background
As the integration degree of semiconductor devices increases, attention is being focused on forming smaller-sized capacitor structures in the manufacturing process of semiconductor devices. The capacitor structure may include a lower electrode, a dielectric structure on the lower electrode, an upper electrode, and a conductive layer with doping atoms, however, the reduction of the capacitor structure may correspondingly reduce the thickness of the conductive layer in the capacitor structure, so that the doping atoms in the conductive layer may easily leak to the upper electrode, which may affect the device performance. Therefore, it is desirable to provide a capacitor structure to effectively reduce the leakage of the dopant atoms in the conductive layer into the upper electrode.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: how to provide a capacitor structure to effectively reduce the leakage of the doping atoms in the conductive layer into the upper electrode.
In order to solve the technical problems, the invention provides a capacitor structure, a semiconductor device and a capacitor structure preparation method.
In a first aspect of the present invention, there is provided a capacitor structure comprising:
a lower electrode;
the dielectric structure, the upper electrode, the first conductive structure and the conductive layer are sequentially formed on the lower electrode, the first conductive structure comprises a first metal silicide, and the conductive layer comprises doping atoms.
In some embodiments, the first conductive structural metal silicide comprises titanium silicide, tungsten silicide, nickel silicide, or cobalt silicide.
In some embodiments, the dopant atoms comprise boron atoms.
In some embodiments, the capacitive structure further comprises: a second conductive structure between the dielectric structure and the upper electrode.
In some embodiments, the second conductive structure comprises a second metal silicide, wherein the second metal silicide is of a different composition than the first metal silicide.
In some embodiments, the second metal silicide comprises titanium silicide, nickel silicide, tungsten silicide, or cobalt silicide.
In some embodiments, the upper electrode comprises a titanium nitride layer.
In some embodiments, the dielectric structure comprises a zirconia layer, an alumina layer, and a zirconia layer disposed in a sequential stack.
In a second aspect of the present invention, there is provided a semiconductor device comprising:
a substrate; and the number of the first and second groups,
the capacitor structure as described above, the capacitor structure being disposed on the substrate.
In a third aspect of the present invention, a method for manufacturing a capacitor structure is provided, which includes:
depositing a lower electrode;
and sequentially forming a dielectric structure, an upper electrode, a first conductive structure and a conductive layer on the lower electrode, wherein the first conductive structure comprises metal silicide, and the conductive layer is doped with doping atoms.
Compared with the prior art, one or more embodiments in the above scheme can have the following advantages or beneficial effects:
the capacitor structure comprises a lower electrode, a dielectric structure, an upper electrode, a first conductive structure and a conductive layer doped with doping atoms, wherein the dielectric structure, the upper electrode, the first conductive structure and the conductive layer are sequentially formed on the lower electrode.
Drawings
The scope of the present disclosure may be better understood by reading the following detailed description of exemplary embodiments in conjunction with the accompanying drawings. Wherein the included drawings are:
fig. 1 is a schematic diagram illustrating a capacitor structure according to a first embodiment of the present invention;
fig. 2 is a schematic diagram illustrating a capacitor structure according to a second embodiment of the present invention;
FIG. 3 is a schematic diagram of a semiconductor device according to an embodiment of the present invention;
fig. 4 shows a schematic flow chart of a method for manufacturing a capacitor structure according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the following will describe in detail an implementation method of the present invention with reference to the accompanying drawings and embodiments, so that how to apply technical means to solve the technical problems and achieve the technical effects can be fully understood and implemented.
In the prior art, as the integration degree of a semiconductor device increases, attention is focused on forming a capacitor structure with a smaller size in the manufacturing process of the semiconductor device. The capacitor structure may include a lower electrode, a dielectric structure on the lower electrode, an upper electrode, and a conductive layer with doping atoms, however, the reduction of the capacitor structure may correspondingly reduce the thickness of the conductive layer in the capacitor structure, so that the doping atoms in the conductive layer may easily leak to the upper electrode, which may affect the device performance. Therefore, it is desirable to provide a capacitor structure to effectively reduce the leakage of the dopant atoms in the conductive layer into the upper electrode.
In view of the above, the present invention provides a capacitor structure, a semiconductor device, and a method for manufacturing the capacitor structure, where the capacitor structure includes a lower electrode, and a dielectric structure, an upper electrode, a first conductive structure, and a conductive layer doped with dopant atoms, which are sequentially formed on the lower electrode, and the first conductive structure is disposed between the upper electrode and the conductive layer, and the first conductive structure may include a first metal silicide, and the first metal silicide has a higher work function, so as to effectively reduce leakage of the dopant atoms in the conductive layer to the upper electrode.
Example one
Referring to fig. 1, fig. 1 is a schematic diagram illustrating a capacitor structure according to a first embodiment of the present invention, which includes:
a lower electrode 11;
a dielectric structure 12, an upper electrode 13, a first conductive structure 14 and a conductive layer 15 sequentially formed on the lower electrode 11, wherein the first conductive structure 14 comprises a first metal silicide, and the conductive layer 14 comprises doping atoms.
The lower electrode 11 may be a polysilicon layer, a metal nitride layer, or a doped polysilicon layer. The lower electrode 11 may be formed using a physical vapor deposition process, a chemical vapor deposition process, or a plasma deposition process.
In embodiments of the present invention, the dielectric structure 12 may be formed of a material having a high dielectric constant. In some embodiments, dielectric structure 12 may include a zirconia layer (ZrO) disposed in a sequential stack2) Aluminum oxide layer (Al)2O3) And a zirconium oxide layer (ZrO)2) Forming ZAZ structure. In other embodiments, the dielectric structure 12 may further include a hafnium oxide layer (HfO) disposed in a sequential stack2) Aluminum oxide layer (Al)2O3) And a hafnium oxide layer (HfO)2) And forming the HAH structure. By combining a material layer with a high dielectric constant with a material layer with a wider band gap, such as an aluminum oxide layer, to form the stacked dielectric structure 12, leakage current can be reduced while having a higher capacitance value.
The upper electrode 13 may be formed of a metal nitride, and in an embodiment of the present invention, the upper electrode 13 may be a titanium nitride layer. The upper electrode 13 overlying the dielectric structure 12 may be formed using the same deposition process used to form the lower electrode 11.
In the embodiment of the present invention, the first conductive structure 14 may be a single layer or a stacked layer structure. In some embodiments, the first conductive structure 14 may be provided as a single layer, and the single layer of the first conductive structure 14 may include any one of titanium silicide, tungsten silicide, nickel silicide, and cobalt silicide as the first metal silicide. In other embodiments, the first conductive structure 14 may be provided as a stacked structure, and the first conductive structure 14 of the stacked structure may include at least two first metal silicides of titanium silicide, tungsten silicide, nickel silicide, and cobalt silicide. As a preferred example, in the embodiment of the present invention, the first metal silicide may be titanium silicide. The first conductive structure 14 made of titanium silicide can be obtained by depositing a titanium layer under a reducing atmosphere, depositing a silicon layer by using a silicon source gas containing hydrogen, and finally performing heat treatment on the formed titanium layer and the formed silicon layer.
In order to prevent the capacitor structure from cracking due to stress when a subsequent cutting process is performed, in an embodiment of the present invention, a conductive layer 15 is disposed on the first conductive structure 14, and in some embodiments, the conductive layer 15 may be a germanium silicide layer doped with boron atoms, wherein the germanium silicide layer doped with boron atoms may be formed by using a silicon source gas, a germanium source gas, and a boron-containing dopant gas.
The capacitor structure provided by the embodiment of the present invention includes the lower electrode 11, and the dielectric structure 12, the upper electrode 13, the first conductive structure 14 and the conductive layer 15 doped with the doping atoms, which are sequentially formed on the lower electrode 11, wherein the first conductive structure 14 is disposed between the upper electrode 13 and the conductive layer 15, and the first conductive structure 14 may include a first metal silicide, and the first metal silicide has a higher work function, so that leakage of the doping atoms in the conductive layer 15 to the upper electrode 13 can be effectively reduced, and in addition, the first conductive structure 14 may also effectively reduce contact resistance between the upper electrode 13 and the conductive layer 15, so that device performance can be effectively improved.
In order to further improve the leakage of the capacitor structure, a second conductive structure may be further disposed between the dielectric structure and the upper electrode, which is specifically described in the following second embodiment.
Example two
Referring to fig. 2, fig. 2 is a schematic diagram illustrating a capacitor structure according to a second embodiment of the present invention, which includes:
a lower electrode 21;
a dielectric structure 22, a second conductive structure 23, an upper electrode 24, a first conductive structure 25 and a conductive layer 26 sequentially formed on the lower electrode 21, wherein the first conductive structure 25 comprises a first metal silicide, and the conductive layer 26 comprises doped atoms.
The lower electrode 21 may be a polysilicon layer, a metal nitride layer, or a doped polysilicon layer. The lower electrode 21 may be formed using a physical vapor deposition process, a chemical vapor deposition process, or a plasma deposition process.
In embodiments of the present invention, the dielectric structure 22 may be formed of a material having a high dielectric constant. In some embodiments, the dielectric structure 22 may include a zirconia layer (ZrO) disposed in a sequential stack2) Aluminum oxide layer (Al)2O3) And a zirconium oxide layer (ZrO)2) Forming ZAZ structure. In other embodiments, the dielectric structure 22 may further include a hafnium oxide layer (HfO) disposed in a sequential stack2) Aluminum oxide layer (Al)2O3) And a hafnium oxide layer (HfO)2) And forming the HAH structure. By combining a material layer with a high dielectric constant with a material layer with a wider band gap, such as an aluminum oxide layer, to form the stacked dielectric structure 22, leakage current can be reduced while having a higher capacitance value.
The second conductive structure 23 may include a second metal silicide, which may include titanium silicide, tungsten silicide, nickel silicide, or cobalt silicide in some embodiments, the second metal silicide being different in composition from the first metal silicide, e.g., the first metal silicide may be titanium silicide and the second metal silicide may be tungsten silicide, nickel silicide, or cobalt silicide.
The upper electrode 24 may be formed of a metal nitride, and in an embodiment of the present invention, the upper electrode 24 may be a titanium nitride layer. The upper electrode 24 covering the second conductive structure 23 may be formed using the same deposition process as that for forming the lower electrode 21.
In the embodiment of the present invention, the first conductive structure 25 may be a single layer or a stacked layer structure. In some embodiments, the first conductive structure 25 may be provided as a single layer, and the single layer of the first conductive structure 25 may include any one of titanium silicide, tungsten silicide, nickel silicide, and cobalt silicide as the first metal silicide. In other embodiments, the first conductive structure 25 may be provided as a stacked structure, and the first conductive structure 25 of the stacked structure may include at least two first metal silicides of titanium silicide, tungsten silicide, nickel silicide, and cobalt silicide. As a preferred example, in the embodiment of the present invention, the first metal silicide may be titanium silicide. The first conductive structure 14 made of titanium silicide can be obtained by depositing a titanium layer under a reducing atmosphere, depositing a silicon layer by using a silicon source gas containing hydrogen, and finally performing heat treatment on the formed titanium layer and the formed silicon layer.
In order to prevent the capacitor structure from cracking due to stress when a subsequent cutting process is performed, in an embodiment of the present invention, the conductive layer 26 is disposed on the first conductive structure 25, and in some embodiments, the conductive layer 26 may be a germanium silicide layer doped with boron atoms, wherein the germanium silicide layer doped with boron atoms may be formed by using a silicon source gas, a germanium source gas, and a dopant gas containing boron.
The capacitor structure provided by the second embodiment of the present invention includes the lower electrode 21, the dielectric structure 22, the second conductive structure 23, the upper electrode 24, the first conductive structure 25, and the conductive layer 26 doped with the doping atoms, which are sequentially formed on the lower electrode 21, and by disposing the first conductive structure 25 between the upper electrode 24 and the conductive layer 26, the first conductive structure 25 may include a first metal silicide, which has a higher work function, and can effectively reduce the leakage of the doping atoms in the conductive layer 26 to the upper electrode 24 and reduce the contact resistance between the upper electrode 24 and the conductive layer 26. In addition, by disposing the second conductive structure 23 between the dielectric structure 22 and the upper electrode 24, leakage current in the capacitor structure can be further avoided, so that device performance can be effectively improved.
In another aspect of the present invention, a semiconductor device is further provided, and please refer to the description of the third embodiment below.
EXAMPLE III
Referring to fig. 3, fig. 3 is a schematic structural diagram of a semiconductor device provided by an embodiment of the present invention, which includes:
a substrate 30; and the number of the first and second groups,
as in the capacitor structure described in the first or second embodiment, the capacitor structure is disposed on the substrate 30.
In the embodiment of the present invention, the substrate 30 may be silicon, germanium, polysilicon, or silicon-on-insulator.
In some embodiments, the capacitive structure may include: a lower electrode 31; a dielectric structure 32, an upper electrode 33, a first conductive structure 34 and a conductive layer 35 sequentially formed on the lower electrode 31, wherein the first conductive structure 34 includes a metal silicide layer, and the conductive layer 35 is doped with doping atoms.
The lower electrode 31 may be a columnar structure, the outer sidewall of the lower electrode 31 may further be provided with a support structure 36, the dielectric structure 31 covers the lower electrode 31 and the support structure 36 in a conformal manner, the upper electrode 33 covers the dielectric structure 31 and fills a region between adjacent lower electrodes 31 provided with the support structure 36, and the first conductive structure 34 including metal silicide and the conductive layer 35 are sequentially formed on the upper electrode 33.
The lower electrode 31, the dielectric structure 32, the upper electrode 33, the first conductive structure 34 and the conductive layer 35 may be formed by the same method and material arrangement as the corresponding structures in the first embodiment of the present invention, and are not described herein again for brevity. Additionally, the support structure 36 may include silicon carbonitride, silicon oxycarbide, or silicon oxycarbonitride.
The semiconductor device provided by the embodiment of the present invention includes a substrate 30 and a capacitor structure disposed on the substrate 30 as described in the first embodiment or the second embodiment, and the semiconductor device can achieve the same advantages as those of the first embodiment or the second embodiment.
Correspondingly, the invention further provides a preparation method of the capacitor structure, and specific reference is made to the description in the fourth embodiment below.
Example four
Referring to fig. 4, fig. 4 is a schematic flow chart of a method for manufacturing a capacitor structure according to an embodiment of the present invention, which includes:
step S401: and depositing a lower electrode.
Step S402: a dielectric structure, an upper electrode, a first conductive structure and a conductive layer are sequentially formed on the lower electrode, the first conductive structure comprises metal silicide, and doped atoms are doped in the conductive layer.
In this embodiment of the present invention, step S401 may specifically be depositing the lower electrode by using a physical vapor deposition process, a chemical vapor deposition process, or a plasma deposition process.
In step S402, the dielectric structure and the upper electrode may be formed using the same deposition process as S401. In some embodiments, forming the first conductive structure may be: depositing a metal layer under a reducing atmosphere, depositing a silicon layer by using a silicon source gas containing hydrogen, and finally performing heat treatment on the formed metal layer and the silicon layer to obtain a first conductive structure consisting of silicide. Wherein the reducing atmosphere may be hydrogen, and the metal silicide may include titanium silicide, tungsten silicide, nickel silicide or cobalt silicide.
In an embodiment of the present invention, the conductive layer may be a germanium silicide layer doped with boron atoms, and the forming of the conductive layer may be: a silicon source gas, a germanium source gas, and a boron-containing dopant gas are used to form a germanium silicide layer doped with boron atoms.
In the capacitor structure manufacturing method provided by the embodiment of the invention, the lower electrode is deposited, and the dielectric structure, the upper electrode, the first conductive structure and the conductive layer are sequentially formed on the lower electrode, the first conductive structure comprises the metal silicide, the conductive layer is doped with the doping atoms, and the first conductive structure with a higher work function can be arranged between the conductive layer and the upper electrode, so that the leakage of the doping atoms in the conductive layer to the upper electrode is reduced, the contact resistance between the upper electrode and the conductive layer is effectively reduced, and the device performance is greatly improved.
Although the embodiments of the present invention have been described above, the above description is only for the convenience of understanding the present invention, and is not intended to limit the present invention. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. A capacitive structure, comprising:
a lower electrode;
the dielectric structure, the upper electrode, the first conductive structure and the conductive layer are sequentially formed on the lower electrode, the first conductive structure comprises a first metal silicide, and the conductive layer comprises doping atoms.
2. The capacitor structure of claim 1, wherein the first metal silicide comprises titanium silicide, tungsten silicide, nickel silicide, or cobalt silicide.
3. The capacitive structure of claim 1 wherein said dopant atoms comprise boron atoms.
4. The capacitive structure of claim 1, further comprising: a second conductive structure between the dielectric structure and the upper electrode.
5. The capacitive structure of claim 4 wherein said second conductive structure comprises a second metal silicide, wherein said second metal silicide is of a different composition than said first metal silicide.
6. The capacitor structure according to claim 5,
the second metal silicide includes titanium silicide, nickel silicide, tungsten silicide, or cobalt silicide.
7. The capacitor structure according to any one of claims 1 to 6, wherein said upper electrode comprises a titanium nitride layer.
8. The capacitor structure according to any one of claims 1 to 6, wherein the dielectric structure comprises a zirconia layer, an alumina layer and a zirconia layer, which are sequentially stacked.
9. A semiconductor device, comprising:
a substrate; and the number of the first and second groups,
the capacitive structure of any one of claims 1 to 8, disposed on the substrate.
10. A method for manufacturing a capacitor structure, comprising:
depositing a lower electrode;
and sequentially forming a dielectric structure, an upper electrode, a first conductive structure and a conductive layer on the lower electrode, wherein the first conductive structure comprises metal silicide, and the conductive layer is doped with doping atoms.
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| CN109841498A (en) * | 2017-11-28 | 2019-06-04 | 爱思开海力士有限公司 | Semiconductor devices and its manufacturing method |
| CN214313250U (en) * | 2021-04-09 | 2021-09-28 | 福建省晋华集成电路有限公司 | Capacitor structure and semiconductor device |
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