CN113113507A - NiO/GaN p-n junction-based self-powered ultraviolet detector and preparation method thereof - Google Patents

NiO/GaN p-n junction-based self-powered ultraviolet detector and preparation method thereof Download PDF

Info

Publication number
CN113113507A
CN113113507A CN202110329571.XA CN202110329571A CN113113507A CN 113113507 A CN113113507 A CN 113113507A CN 202110329571 A CN202110329571 A CN 202110329571A CN 113113507 A CN113113507 A CN 113113507A
Authority
CN
China
Prior art keywords
nio
layer
electrode
substrate
gan layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110329571.XA
Other languages
Chinese (zh)
Inventor
王顺利
郭道友
王亚超
吴小平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jinhua Purple Core Technology Co ltd
Original Assignee
Jinhua Purple Core Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jinhua Purple Core Technology Co ltd filed Critical Jinhua Purple Core Technology Co ltd
Priority to CN202110329571.XA priority Critical patent/CN113113507A/en
Publication of CN113113507A publication Critical patent/CN113113507A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03044—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds comprising a nitride compounds, e.g. GaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1856—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising nitride compounds, e.g. GaN
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)

Abstract

The invention belongs to the technical field of photoelectric detectors, and particularly relates to a NiO/GaNp-n junction-based self-powered ultraviolet detector and a preparation method thereof. The NiO/GaNp-n junction self-powered ultraviolet detector prepared by the invention has wide application prospects in military and civil fields such as ultraviolet sterilization dose detection, missile tracking, corona monitoring and the like, detects ultraviolet signals with zero power consumption, and has good stability and self-powering capability so that the detector can work in severe environments for a long time.

Description

NiO/GaN p-n junction-based self-powered ultraviolet detector and preparation method thereof
Technical Field
The invention belongs to the technical field of photoelectric detectors, and particularly relates to a NiO/GaNp-n junction-based self-powered ultraviolet detector and a preparation method thereof.
Background
Ultraviolet (UV) light has a wavelength ranging from 10nm to 400nm, and among them, middle ultraviolet, far ultraviolet and vacuum ultraviolet rays are absorbed by the atmosphere and hardly reach the earth's surface. And near ultraviolet rays can penetrate through the ozone layer and the cloud layer to irradiate the ground. Ultraviolet radiation in daily life comes mainly from the near ultraviolet portion. Excessive ultraviolet radiation can cause various diseases of the human body, such as cataract, skin cancer and the like. Therefore, the detection and monitoring of ultraviolet radiation, particularly near ultraviolet band radiation, is important to human health. The traditional ultraviolet detector preparation materials mainly comprise a first-generation semiconductor and a second-generation semiconductor, the forbidden band widths of the semiconductors are small, the cut-off wavelength is large, and a layer of optical filter is often required to be added when the materials are used for ultraviolet detection, so that the current requirements cannot be met.
Gallium nitride (GaN) as a third generation semiconductor has a band gap of 3.4eV, and the corresponding absorption edge is 365nm, and is a natural ultraviolet detection material. And meanwhile, the device prepared by the method has higher stability due to excellent physical and chemical properties. In recent years, ultraviolet detectors based on GaN materials have been studied mainly in several structures, such as a metal-semiconductor-metal (MSM) type, a schottky junction type, and a p-n junction type. For MSM-type detectors, the main problem arises from the persistent photoconductive effect after photoquenching, which is mainly due to the metastable state of intrinsic defects, such as Ga vacancies and defects. In recent years, researchers have continuously optimized and prepared detectors with excellent light responsiveness, but the detectors usually need to be operated under an external bias voltage, which inevitably increases the size of the detectors, is not favorable for the development trend of miniaturization, and has a slow response speed.
Disclosure of Invention
The invention aims to provide a self-powered ultraviolet detector based on NiO/GaNp-n junction and a preparation method thereof, which can improve the response speed, and meanwhile, the detector has the self-powered effect and has zero power consumption for detecting ultraviolet signals.
The invention provides a NiO/GaNp-n junction-based self-powered ultraviolet detector which comprises a substrate, an n-GaN layer positioned above the substrate, a p-NiO layer positioned on the side, away from the substrate, of the n-GaN layer, a first electrode and a second electrode, wherein the first electrode is positioned on the side, away from the n-GaN layer, of the p-NiO layer, the second electrode is abutted to the n-GaN layer, and the n-GaN layer and the p-NiO layer form a NiO/GaN p-n junction.
Wherein the second electrode is positioned on the side of the n-GaN layer, which faces away from the substrate, the contact area of the p-NiO layer and the n-GaN layer is smaller than the surface area of the n-GaN layer, which faces towards the p-NiO layer, and the second electrode is not in contact with the p-NiO layer.
Wherein the thickness of the p-NiO layer is 100 nm-5 mu m; the thickness of the n-GaN layer is 500 nm-4.5 mu m.
Wherein the p-NiO layer is formed by magnetron sputtering growth, the sputtering pressure is 1.0-3.0 Pa, the sputtering power is 50-300W, and O is contained in sputtering gas2The flow ratio of the Ar to the catalyst is 1 to 99 percent; the sputtering time is 1-10 h, and the sputtering temperature is 25-500 ℃.
The n-GaN layer is grown by a metal organic chemical vapor deposition method, gallium is used as a gallium source, ammonia gas is used as a nitrogen source, the volume flow of the gallium is 0.5-10 mL/min, the volume flow of the ammonia gas is 50-200 mL/min, and the reaction temperature of the metal organic chemical vapor deposition is 400-1100 ℃.
Wherein the substrate is a flexible substrate or a rigid substrate.
The first electrode is made of any one or a mixture of Au, Pt, Ag, In, Ti, Ni, Cu or graphene; the second electrode is made of any one or a mixture of Au, Pt, Ag, In, Ti, Ni, Cu and graphene.
The invention also comprises a second technical scheme: a method for preparing the self-powered ultraviolet detector based on the NiO/GaNp-n junction comprises the following steps: growing an n-GaN layer on the substrate by adopting a metal organic chemical vapor deposition method; growing a p-NiO layer on one surface of the GaN layer, which is far away from the substrate, through magnetron sputtering; and respectively evaporating a metal electrode on the n-GaN layer and the p-NiO layer by using a thermal evaporation method, namely forming a second electrode on the n-GaN layer and a first electrode on the p-NiO layer.
The method for growing the n-GaN layer on the substrate by adopting the metal organic chemical vapor deposition method comprises the following steps: and growing an n-GaN layer on the substrate by adopting a metal organic chemical vapor deposition method, wherein the metal gallium is used as a gallium source, ammonia gas is used as a nitrogen source, the volume flow of the metal gallium is 0.5-10 mL/min, and the volume flow of the ammonia gas is 50-200 mL/min, and the reaction temperature of the metal organic chemical vapor deposition is 400-1100 ℃.
The method for growing the p-NiO layer on the surface, away from the substrate, of the GaN layer through magnetron sputtering comprises the following steps: sputtering pressure of 1.0-3.0 Pa, sputtering power of 50-300W, and O in sputtering gas2The flow ratio of the Ar to the catalyst is 1 to 99 percent; and growing a p-NiO layer on the surface of the GaN layer, which is far away from the substrate, by magnetron sputtering by taking metallic nickel as a nickel source, wherein the sputtering time is 1-10 h, and the sputtering temperature is 25-500 ℃.
Has the advantages that:
(1) according to the NiO/GaN p-n junction-based self-powered ultraviolet detector, the n-GaN and the p-NiO have good epitaxial relationship and matched energy band structures, and the potential difference between the n-GaN and the p-NiO material can generate a built-in electric field, so that photo-generated carriers can be separated spontaneously and rapidly, the response speed can be improved, the light response performance of the detector can be improved, the self-powered effect is achieved, and the detector can detect ultraviolet light under the condition of zero power consumption. The NiO/GaN p-n junction-based self-powered ultraviolet detector disclosed by the invention is beneficial to the development of a miniaturized, efficient and intelligent integrated network in the future.
The NiO/GaN p-n junction self-powered ultraviolet detector prepared by the invention has wide application prospects in military and civil fields such as ultraviolet sterilization dose detection, missile tracking, corona monitoring and the like, and can work for a long time in severe environments due to good stability and self-powering capacity.
(2) The preparation method of the NiO/GaN p-n junction-based self-powered ultraviolet detector has the advantages of simple preparation process, strong process controllability and easy operation, and the GaN film and the NiO film are prepared in a high-vacuum environment, so that the preparation method has the advantages of less impurities, high purity, strong process operability, compact surface, stable and uniform thickness, large-area preparation and good repeatability.
Drawings
FIG. 1 is a schematic structural diagram of a NiO/GaN p-n junction-based self-powered ultraviolet detector according to an embodiment of the invention;
FIG. 2 is an I-V curve of a NiO/GaN p-n junction-based self-powered ultraviolet detector structure in the dark according to embodiment 1 of the invention, and the inset is an I-V curve of different light intensities under 365nm illumination;
FIG. 3 is an I-T curve of a NiO/GaNp-n junction-based self-powered ultraviolet detector structure under 0V bias and at 365nm illumination for different illumination intensities according to embodiment 1 of the invention;
FIG. 4 is a fitting graph of response speed of a NiO/GaNp-n junction-based self-powered ultraviolet detector under 0V bias and 365nm illumination according to embodiment 1 of the invention.
Detailed Description
The present invention is further illustrated by the following examples, which are not intended to limit the scope of the invention. The means used in the examples are, unless otherwise specified, those conventional in the art.
Example 1:
a preparation method of a self-powered ultraviolet detector based on NiO/GaN p-n junction comprises the following steps:
growing an n-GaN layer on the substrate by adopting a metal organic chemical vapor deposition method;
growing a p-NiO layer on one surface of the GaN layer, which is far away from the substrate, through magnetron sputtering;
and respectively evaporating a metal electrode on the n-GaN layer and the p-NiO layer by using a thermal evaporation method, namely forming a second electrode on the n-GaN layer and a first electrode on the p-NiO layer.
The preparation method of the embodiment of the application has the advantages of simple preparation process, strong process controllability and easiness in operation, and the n-GaN layer prepared by adopting the metal organic chemical vapor deposition method and the p-NiO layer grown by magnetron sputtering have compact surfaces, stable and uniform thickness, large-area preparation and good repeatability.
For convenience of specific description, the preparation method of the self-powered ultraviolet detector based on the NiO/GaN p-n junction in the embodiment of the present application specifically includes the following steps:
(1) cutting 2 inch (0001) face sapphire into 10X 10mm2Size, pre-treating by ultrasonic cleaning with acetone, anhydrous alcohol and deionized water for 15min, and treating with high-purity N2And drying to obtain the pretreated substrate.
(2) Putting the dried (0001) surface sapphire substrate into a Metal Organic Chemical Vapor Deposition (MOCVD) reaction chamber, and then putting the substrate into NH3In the atmosphere, using metal gallium as gallium source, raising temp. to 800 deg.C, making nitridation treatment of substrate, then reducing temp. to 600 deg.C to grow n-GaN film and NH3The flow rate of (A) was 100mL/min, the reaction time of the MOCVD was 6 hours, and the thickness of the n-GaN film was about 4.5. mu.m.
(3) The n-GaN film deposited on the (0001) plane sapphire substrate prepared in the above way is taken as a substrate, and is placed in a sputtering cavity to grow a p-NiO film by a magnetron sputtering method, wherein a sapphire sheet is used for covering half of the area of the n-GaN film in the growth process to prepare the NiO/GaN p-n junction film, and the specific parameters are as follows: the back vacuum is 3.0 × 10- 4Pa, the working atmosphere is vacuum, the sputtering pressure is 2.0Pa, the substrate temperature is 500 ℃, and the sputtering gas is 20sccm of Ar and 20sccm of O2The sputtering power of the mixed gas is 50W, the target spacing is 5cm, the sputtering time is 1h, and the thickness of the p-NiO film is about 100 nm.
(4) And (4) evaporating a layer of Ti metal on the sample obtained in the step (3) by thermal evaporation, and then evaporating a layer of Au metal on the surface of the Ti metal layer to form a Ti/Au composite electrode to be connected with an external circuit. In the embodiment of the application, the Ti/Au composite electrode is respectively located on one side of the p-NiO layer, which is far away from the n-GaN layer, and on the n-GaN layer, and is respectively a first electrode and a second electrode, that is, the first electrode and the second electrode are made of the same material, In other embodiments, the first electrode and the second electrode may also be made of different materials, and the material of the first electrode includes any one or a mixture of more of Au, Pt, Ag, In, Ti, Ni or Cu; the second electrode is made of any one or a mixture of Au, Pt, Ag, In, Ti, Ni or Cu.
The NiO/GaN p-n junction-based self-powered ultraviolet detector can be prepared through the experimental process, and as shown in FIG. 1, the NiO/GaN p-n junction-based self-powered ultraviolet detector comprises a sapphire substrate 1, an n-GaN layer 2 located above the sapphire substrate 1, a p-NiO layer 3 located on one side, away from the sapphire substrate 1, of the n-GaN layer 2, a first electrode 41 and a second electrode 42, wherein the first electrode 41 is located on one side, away from the n-GaN layer 2, of the p-NiO layer 3, the second electrode 42 is abutted to the n-GaN layer 2, and the n-GaN layer 2 and the p-NiO layer 3 form a NiO/GaN p-n junction.
Wherein the second electrode 42 is positioned at the side of the n-GaN layer 2 facing away from the substrate 1, the contact area of the p-NiO layer 3 and the n-GaN layer 2 is smaller than the surface area of the n-GaN layer 2 facing the p-NiO layer 3, and the second electrode 42 is not in contact with the p-NiO layer 3.
Wherein the thickness of the p-NiO layer 3 is 100 nm; the thickness of the n-GaN layer 2 is about 4.5 μm.
The first electrode 41 and the second electrode 42 are both made of Ti/Au composite electrodes.
An I-V curve of the NiO/GaN p-n junction-based self-powered ultraviolet detector in the embodiment of the application under the dark condition is shown in FIG. 2, the I-V curve has obvious diode rectification characteristic, and the rectification ratio is more than 10 under the bias voltage of +/-0.5V2. The inset shows the I-V curve of the detector at 0V bias for different intensities of 365nm uv light, and from the inset in fig. 2 it can be seen that the I-T curve of the detector at 0V bias for different intensities of 365nm uv light increases the photocurrent with the increase in intensity. FIG. 3 shows the I-T curves of the detector under 0V bias for 365nm UV light with different light intensities, and the photocurrent increases with the increase of the light intensity, FIG. 4 is the speed of response of the detector under 0V bias to 365nm UV light, and the rise time τ is fittedrAnd decay time taudThe light response speed is higher for 31ms and 37ms respectively.
Example 2
The difference from the variant embodiment 1 is that the substrate of the embodiment of the present application is a copper mesh substrate. Specifically, the preparation method of the self-powered ultraviolet detector based on the NiO/GaN p-n junction in the embodiment of the application specifically comprises the following steps:
(1) will be 10X 10mm2Ultrasonically cleaning copper mesh with acetone, anhydrous ethanol, and deionized water for 15min, and then using high-purity N2And carrying out pretreatment such as drying to obtain a pretreated substrate.
(2) Putting the dried copper mesh substrate into a Metal Organic Chemical Vapor Deposition (MOCVD) reaction chamber, and then putting the substrate into NH3In the atmosphere, using gallium as gallium source, raising the temperature to 800 deg.C, making nitridation treatment of copper net substrate, then reducing the temperature to 600 deg.C to grow n-GaN film and NH3The flow rate of (A) was 100mL/min, the reaction time of the MOCVD was 6 hours, and the thickness of the n-GaN film was about 4.5. mu.m.
(3) Putting the prepared n-GaN film deposited on the copper mesh substrate into a sputtering cavity, and growing a p-NiO film on the n-GaN film by a magnetron sputtering method, wherein a sapphire sheet is used for covering half of the area of the n-GaN film in the growth process to prepare the NiO/GaN p-n junction film, and the specific parameters are as follows: the back vacuum is 3.0 × 10-4Pa, the working atmosphere is vacuum, the sputtering pressure is 2.0Pa, the substrate temperature is 500 ℃, and the sputtering gas is 20sccm of Ar and 20sccm of O2The sputtering power of the mixed gas is 50W, the target spacing is 5cm, the sputtering time is 1h, and the thickness of the p-NiO film is about 100 nm.
(4) And (4) evaporating a layer of Ti metal on the sample obtained in the step (3) by thermal evaporation, and then evaporating a layer of Au metal on the surface of the Ti metal layer to form a Ti/Au composite electrode to be connected with an external circuit. In the embodiment of the application, the Ti/Au composite electrode is respectively located on one side of the p-NiO layer, which is far away from the n-GaN layer, and on the n-GaN layer, and is respectively a first electrode and a second electrode, that is, the first electrode and the second electrode are made of the same material, In other embodiments, the first electrode and the second electrode may also be made of different materials, and the material of the first electrode includes any one or a mixture of more of Au, Pt, Ag, In, Ti, Ni or Cu; the second electrode is made of any one or a mixture of Au, Pt, Ag, In, Ti, Ni or Cu.
The NiO/GaN p-n junction-based self-powered ultraviolet detector can be prepared through the experimental process, and as shown in FIG. 1, the NiO/GaN p-n junction-based self-powered ultraviolet detector comprises a copper mesh substrate 1, an n-GaN layer 2 located above the copper mesh substrate 1, a p-NiO layer 3 located on one side, away from the copper mesh substrate 1, of the n-GaN layer 2, a first electrode 41 and a second electrode 42, wherein the first electrode 41 is located on one side, away from the n-GaN layer 2, of the p-NiO layer 3, the second electrode 42 is abutted to the n-GaN layer 2, and the n-GaN layer 2 and the p-NiO layer 3 form a NiO/GaN p-n junction.
Wherein the second electrode 42 is positioned at the side of the n-GaN layer 2 facing away from the substrate 1, the contact area of the p-NiO layer 3 and the n-GaN layer 2 is smaller than the surface area of the n-GaN layer 2 facing the p-NiO layer 3, and the second electrode 42 is not in contact with the p-NiO layer 3.
Wherein the thickness of the p-NiO layer 3 is 100 nm; the thickness of the n-GaN layer 2 is about 4.5 μm.
The first electrode 41 and the second electrode 42 are both made of Ti/Au composite electrodes.
According to the NiO/GaN p-n junction-type self-powered ultraviolet detector disclosed by the embodiment of the application, the I-T curve of 365nm ultraviolet light is measured under 0V voltage, and the fact that the current changes instantly when an ultraviolet lamp switch is controlled is found, which indicates that the detector has high sensitivity to the 365nm ultraviolet light. And due to the flexibility of the copper mesh substrate, the detector can be used in the field of flexible detection.
Example 3
The difference from embodiment 1 lies in the electrode fabrication in step (4), and the first electrode and the second electrode in the embodiment of the present application are graphene electrodes.
Specifically, the preparation method of the self-powered ultraviolet detector based on the NiO/GaN p-n junction in the embodiment of the application specifically comprises the following steps:
(1) will be 10X 10mm2Ultrasonically cleaning copper mesh with acetone, anhydrous ethanol, and deionized water for 15min, and then using high-purity N2And carrying out pretreatment such as drying to obtain a pretreated substrate.
(2) Putting the dried copper mesh substrate into a Metal Organic Chemical Vapor Deposition (MOCVD) reaction chamber, and then putting the substrate into NH3In the atmosphere, using gallium as gallium source, raising the temperature to 800 deg.C, making nitridation treatment of copper net substrate, then reducing the temperature to 600 deg.C to grow n-GaN film and NH3The flow rate of (A) was 100mL/min, the reaction time of the MOCVD was 6 hours, and the thickness of the n-GaN film was about 4.5. mu.m.
(3) Putting the prepared n-GaN film deposited on the copper mesh substrate into a sputtering cavity, and growing a p-NiO film on the n-GaN film by a magnetron sputtering method, wherein a sapphire sheet is used for covering half of the area of the n-GaN film in the growth process to prepare the NiO/GaN p-n junction film, and the specific parameters are as follows: the back vacuum is 3.0 × 10-4Pa, the working atmosphere is vacuum, the sputtering pressure is 2.0Pa, the substrate temperature is 500 ℃, and the sputtering gas is 20sccm of Ar and 20sccm of O2The sputtering power of the mixed gas is 50W, the target spacing is 5cm, the sputtering time is 1h, and the thickness of the p-NiO film is about 100 nm.
(4) The method for manufacturing the graphene electrode specifically comprises the following steps:
4.1) growing on the surface of copper foil with the thickness of 24-25 mu m by a chemical vapor deposition method to obtain continuous graphene, spin-coating PMMA with the concentration of 100mg/ml on the surface of the graphene by a spin coater, and baking for 5-6min at the temperature of 168-172 ℃ on a constant temperature table after the spin coating; 4.2) after baking, putting the surface which is not coated with PMMA into a plasma cleaning machine for treatment for 1-2min, removing graphene on the copper foil which is away from the PMMA surface, and then putting PMMA/graphene/copper foil into FeCl with the concentration of 5mol/L3Etching copper foil in the solution for 25-35min, transferring to deionized water, soaking for 8-12min, and transferring to new 5mol/L FeCl3Etching the residual copper foil in the solution for 2-2.5h to remove floccules on the copper foil, transferring the completely etched copper foil to deionized water to clean the residual FeCl3Etching solution, transferring to dilute hydrochloric acid to further clean FeCl remained on the surface of the etching solution3Etching liquid and other impurities; 4.3) after the NiO/GaN base is cleaned, carrying out hydrophilic treatment on the NiO/GaN base, then fishing out graphene by using the NiO/GaN base, and transferring the graphene to a NiO/GaN p-n junction, namely transferring the graphene to the side of the p-NiO layer, which is far away from the n-GaN, and transferring the n-GaN to the side of the substrate, which is far away from the substrate; 4.4) air-drying the obtained sample for 8h, completely baking the sample on a constant temperature table, and then putting the sample into a dichloromethane solution at 40 ℃ to remove PMMA glue; 4.5) applying silver coating on the transferred graphene by adopting dripping modeThe electrodes are prepared by the method of the rice noodles, namely the graphene/silver nanowire composite electrode is formed, namely the first electrode and the second electrode are both graphene/silver nanowire composite electrodes.
The NiO/GaN p-n junction-based self-powered ultraviolet detector prepared in the embodiment of the application comprises a sapphire substrate 1, an n-GaN layer 2 located above the sapphire substrate 1, a p-NiO layer 3 located on one side, away from the sapphire substrate 1, of the n-GaN layer 2, a first electrode 41 and a second electrode 42, wherein the first electrode 41 is located on one side, away from the n-GaN layer 2, of the p-NiO layer 3, the second electrode 42 is abutted to the n-GaN layer 2, and the n-GaN layer 2 and the p-NiO layer 3 form a NiO/GaN p-n junction.
Wherein the second electrode 42 is positioned at the side of the n-GaN layer 2 facing away from the substrate 1, the contact area of the p-NiO layer 3 and the n-GaN layer 2 is smaller than the surface area of the n-GaN layer 2 facing the p-NiO layer 3, and the second electrode 42 is not in contact with the p-NiO layer 3.
Wherein the thickness of the p-NiO layer 3 is 100 nm; the thickness of the n-GaN layer 2 is about 4.5 μm.
The first electrode 41 and the second electrode 42 are both made of graphene/silver nanowire composite electrodes.
The NiO/GaN p-n junction-based self-powered ultraviolet detector disclosed by the embodiment of the application is subjected to photoelectric performance measurement, an I-t curve is measured under the voltage of 0V, and the fact that the current changes instantaneously when an ultraviolet lamp is controlled to be switched on and switched off shows that the detector has high sensitivity under the irradiation of 365nm ultraviolet light. The test results were all similar to example 1.
Example 4
A preparation method of a self-powered ultraviolet detector based on NiO/GaN p-n junction comprises the following steps:
growing an n-GaN layer on the substrate by adopting a metal organic chemical vapor deposition method;
growing a p-NiO layer on one surface of the GaN layer, which is far away from the substrate, through magnetron sputtering;
and respectively evaporating a metal electrode on the n-GaN layer and the p-NiO layer by using a thermal evaporation method, namely forming a second electrode on the n-GaN layer and a first electrode on the p-NiO layer.
The preparation method of the embodiment of the application has the advantages of simple preparation process, strong process controllability and easy operation, and the n-GaN layer prepared by adopting the metal organic chemical vapor deposition method and the p-NiO layer film grown by magnetron sputtering have compact surfaces, stable and uniform thickness, large-area preparation and good repeatability.
The method comprises the following steps of growing an n-GaN layer on a substrate by adopting a metal organic chemical vapor deposition method, wherein in the process of growing the n-GaN layer on the substrate by adopting the metal organic chemical vapor deposition method, metal gallium is used as a gallium source, ammonia gas is used as a nitrogen source, the volume flow of the metal gallium is 0.5-10 mL/min, the volume flow of the ammonia gas is 50-200 mL/min, growing the n-GaN layer on the substrate by adopting the metal organic chemical vapor deposition method, and the reaction temperature of the metal organic chemical vapor deposition is 400-1100 ℃.
The method comprises the following steps of growing a p-NiO layer on one surface of a GaN layer, which is far away from a substrate, by magnetron sputtering, wherein the process comprises the following steps: sputtering pressure of 1.0-3.0 Pa, sputtering power of 50-300W, and O in sputtering gas2The flow ratio of the Ar to the catalyst is 1 to 99 percent; and growing a p-NiO layer on the surface of the GaN layer, which is far away from the substrate, by magnetron sputtering by taking metallic nickel as a nickel source, wherein the sputtering time is 1-10 h, and the sputtering temperature is 25-500 ℃.
Specifically, the preparation method of the self-powered ultraviolet detector based on the NiO/GaN p-n junction in the embodiment of the application specifically comprises the following steps:
(1) cutting 2 inch (0001) face sapphire into 10X 10mm2Size, pre-treating by ultrasonic cleaning with acetone, anhydrous alcohol and deionized water for 15min, and treating with high-purity N2And drying to obtain the pretreated substrate. In the embodiment of the present application, the substrate is a rigid substrate made of (0001) plane sapphire, and in other embodiments, the substrate may be made of other types of rigid substrates or flexible substrates.
(2) Putting the dried (0001) surface sapphire substrate into a Metal Organic Chemical Vapor Deposition (MOCVD) reaction chamber, and then putting the substrate into NH3In the atmosphere, taking metal gallium as a gallium source, the volume flow of the metal gallium is 0.5ml/min, raising the temperature to 400 ℃, carrying out nitridation treatment on the substrate, and then growing an n-GaN film at 400 ℃, NH3The volume flow of (2) is 50mL/min, the reaction time of the metal organic chemical vapor deposition is 0.5h, and the thickness of the n-GaN layer is about 500 nm.
(3) Putting the n-GaN film deposited on the (0001) plane sapphire substrate into a sputtering cavity to grow a p-NiO film by a magnetron sputtering method, wherein a sapphire sheet is used for covering half of the area of the n-GaN film in the growth process, and the p-NiO film is grown on the n-GaN film to prepare the NiO/GaN p-n junction film, and the specific parameters are as follows: the back vacuum is 2.0 × 10-4Pa, vacuum working atmosphere, sputtering pressure of 1.0Pa, substrate temperature of 25 deg.C, and sputtering gas of 2sccm Ar and 20sccm O2The sputtering power of the mixed gas was 100W, the target gap was 5cm, the sputtering time was 10h, and the thickness of the p-NiO film was about 5 μm.
(4) And (4) evaporating a layer of Ti metal on the sample obtained in the step (3) by thermal evaporation, and then evaporating a layer of Au metal on the surface of the Ti metal layer to form a Ti/Au composite electrode to be connected with an external circuit. In the embodiment of the application, the Ti/Au composite electrode is respectively located on one side of the p-NiO layer, which is far away from the n-GaN layer, and on the n-GaN layer, and is respectively a first electrode and a second electrode, that is, the first electrode and the second electrode are made of the same material, In other embodiments, the first electrode and the second electrode may also be made of different materials, and the material of the first electrode includes any one or a mixture of more of Au, Pt, Ag, In, Ti, Ni or Cu; the second electrode is made of any one or a mixture of Au, Pt, Ag, In, Ti, Ni or Cu.
According to the NiO/GaN p-n junction-type self-powered ultraviolet detector disclosed by the embodiment of the application, the I-T curve of 365nm ultraviolet light is measured under 0V voltage, and the fact that the current changes instantly when an ultraviolet lamp switch is controlled is found, which indicates that the detector has high sensitivity to the 365nm ultraviolet light. And due to the flexibility of the copper mesh substrate, the detector can be used in the field of flexible detection.
Example 5
A preparation method of a self-powered ultraviolet detector based on NiO/GaN p-n junction comprises the following steps:
growing an n-GaN layer on the substrate by adopting a metal organic chemical vapor deposition method;
growing a p-NiO layer on one surface of the GaN layer, which is far away from the substrate, through magnetron sputtering;
and respectively evaporating a metal electrode on the n-GaN layer and the p-NiO layer by using a thermal evaporation method, namely forming a second electrode on the n-GaN layer and a first electrode on the p-NiO layer.
The preparation method of the embodiment of the application has the advantages of simple preparation process, strong process controllability and easy operation, and the n-GaN layer prepared by adopting the metal organic chemical vapor deposition method and the p-NiO layer film grown by magnetron sputtering have compact surfaces, stable and uniform thickness, large-area preparation and good repeatability.
The method comprises the following steps of growing an n-GaN layer on a substrate by adopting a metal organic chemical vapor deposition method, wherein in the process of growing the n-GaN layer on the substrate by adopting the metal organic chemical vapor deposition method, metal gallium is used as a gallium source, ammonia gas is used as a nitrogen source, the volume flow of the metal gallium is 0.5-10 mL/min, the volume flow of the ammonia gas is 50-200 mL/min, growing the n-GaN layer on the substrate by adopting the metal organic chemical vapor deposition method, and the reaction temperature of the metal organic chemical vapor deposition is 400-1100 ℃.
The method comprises the following steps of growing a p-NiO layer on one surface of a GaN layer, which is far away from a substrate, by magnetron sputtering, wherein the process comprises the following steps: sputtering pressure of 1.0-3.0 Pa, sputtering power of 50-300W, and O in sputtering gas2The flow ratio of the Ar to the catalyst is 1 to 99 percent; and growing a p-NiO layer on the surface of the GaN layer, which is far away from the substrate, by magnetron sputtering by taking metallic nickel as a nickel source, wherein the sputtering time is 1-10 h, and the sputtering temperature is 25-500 ℃.
Specifically, the preparation method of the self-powered ultraviolet detector based on the NiO/GaN p-n junction in the embodiment of the application specifically comprises the following steps:
(1) cutting 2 inch (0001) face sapphire into 10X 10mm2Size, pre-treating by ultrasonic cleaning with acetone, anhydrous alcohol and deionized water for 15min, and treating with high-purity N2And drying to obtain the pretreated substrate. In the embodiment of the present application, the substrate is a rigid substrate made of (0001) plane sapphire, and in other embodiments, the substrate may be made of other types of rigid substrates or flexible substrates.
(2) Will be dried(0001) The surface sapphire substrate is placed into a Metal Organic Chemical Vapor Deposition (MOCVD) reaction chamber and then placed in NH3In the atmosphere, taking metal gallium as a gallium source, the volume flow of the metal gallium is 10ml/min, raising the temperature to 80 ℃, nitriding the substrate, raising the temperature to 1100 ℃ to grow an n-GaN film, and growing NH3The volume flow of (2) is 200mL/min, the reaction time of the metal organic chemical vapor deposition is 5h, and the thickness of the n-GaN layer is about 1 mu m.
(3) Putting the n-GaN film deposited on the (0001) plane sapphire substrate into a sputtering cavity to grow a p-NiO film by a magnetron sputtering method, wherein a sapphire sheet is used for covering half of the area of the n-GaN film in the growth process, and the p-NiO film is grown on the n-GaN film to prepare the NiO/GaN p-n junction film, and the specific parameters are as follows: the back vacuum is 2.0 × 10-4Pa, the working atmosphere is vacuum, the sputtering pressure is 3.0Pa, the substrate temperature is 300 ℃, and the sputtering gas is 20sccm of Ar and 2sccm of O2The mixed gas was sputtered at a sputtering power of 300W, a target gap of 5cm, a sputtering time of 5h, and a p-NiO film thickness of about 3 μm.
(4) And (4) evaporating a layer of Ti metal on the sample obtained in the step (3) by thermal evaporation, and then evaporating a layer of Au metal on the surface of the Ti metal layer to form a Ti/Au composite electrode to be connected with an external circuit. In the embodiment of the application, the Ti/Au composite electrode is respectively located on one side of the p-NiO layer, which is far away from the n-GaN layer, and on the n-GaN layer, and is respectively a first electrode and a second electrode, that is, the first electrode and the second electrode are made of the same material, In other embodiments, the first electrode and the second electrode may also be made of different materials, and the material of the first electrode includes any one or a mixture of more of Au, Pt, Ag, In, Ti, Ni or Cu; the second electrode is made of any one or a mixture of Au, Pt, Ag, In, Ti, Ni or Cu.
According to the NiO/GaN p-n junction-type self-powered ultraviolet detector disclosed by the embodiment of the application, the I-T curve of 365nm ultraviolet light is measured under 0V voltage, and the fact that the current changes instantly when an ultraviolet lamp switch is controlled is found, which indicates that the detector has high sensitivity to the 365nm ultraviolet light. And due to the flexibility of the copper mesh substrate, the detector can be used in the field of flexible detection.
Example 6
As shown in FIG. 1, the embodiment of the application comprises a NiO/GaN p-n junction-based self-powered ultraviolet detector, which comprises a substrate 1, an n-GaN layer 2 positioned above the substrate 1, a p-NiO layer 3 positioned on the side, facing away from the substrate 1, of the n-GaN layer 2, a first electrode 41 and a second electrode 42, wherein the first electrode 41 is positioned on the side, facing away from the n-GaN layer 2, of the p-NiO layer 3, the second electrode 42 is abutted to the n-GaN layer 2, and the n-GaN layer 2 and the p-NiO layer 3 form a NiO/GaN p-n junction.
In the embodiment of the application, the second electrode 42 is positioned on the side of the n-GaN layer 2 away from the substrate 1, the contact area of the p-NiO layer 3 and the n-GaN layer 2 is smaller than the surface area of the n-GaN layer 2 facing the p-NiO layer 3, and the second electrode 42 is not in contact with the p-NiO layer 3. In other embodiments, the second electrode 42 may be disposed on the side of the n-GaN layer 2, and the second electrode 42 is not in contact with the first electrode 41, and the second electrode 42 is not in contact with the p-NiO layer 3.
In the embodiment of the present application, the thickness of the p-NiO layer 3 is 100nm to 5 μm, and may be, for example, 100nm, 500nm, 1 μm, 2 μm, 3 μm, 4 μm, or 5 μm; the thickness of the n-GaN layer 2 is 500nm to 4.5. mu.m, and may be, for example, 500nm, 800nm, 1 μm, 2 μm, 3 μm, 4 μm, or 4.5 μm.
In the embodiment of the application, the p-NiO layer 3 is grown by magnetron sputtering, and the sputtering pressure is 1.0-3.0 Pa, such as 1Pa, 2Pa, 2.5Pa or 3 Pa; the sputtering power is 50-300W, for example, 50W, 80W, 100W, 200W or 300W; o in sputtering gas2The flow rate ratio to Ar is 1% to 99%, and may be, for example, 1%, 20%, 30%, 40%, 50%, 60%, 70%, 80%, 90%, 99%, or the like; the sputtering time is 1-10 h, for example, 1h, 2h, 4h, 5h, 6h, 7h, 8h, 9h or 10 h; the sputtering temperature is 25 to 500 ℃, and may be, for example, 25 ℃, 50 ℃, 100 ℃, 200 ℃, 300 ℃, 400 ℃ or 500 ℃.
In the embodiment of the application, the n-GaN layer 2 is grown by a metal organic chemical vapor deposition method, and the metal gallium is used as a gallium source and ammonia gas is used as a nitrogen source, wherein the volume flow rate of the metal gallium is 0.5-10 ml/min, for example, 0.5ml/min, 0.8ml/min, 1ml/min, 2ml/min, 3ml/min, 4ml/min, 5ml/min, 8ml/min, 9ml/min or 10 ml/min; the volume flow of the ammonia gas is 50-200 mL/min, for example, 50mL/min, 100mL/min, 150mL/min or 200 mL/min; the reaction temperature of the metal organic chemical vapor deposition is 400-1100 ℃, for example, 400 ℃, 600 ℃, 800 ℃, 900 ℃, 1000 ℃ or 1100 ℃.
In the embodiment of the present application, the substrate 1 is a rigid substrate, such as sapphire, and in other embodiments, the substrate 1 may also be a flexible substrate 1, such as a copper mesh.
In the embodiment of the present application, the first electrode 41 and the second electrode 42 are both Ti/Ag composite electrodes, and in other embodiments, the materials of the first electrode 41 and the second electrode 42 may be Ti/Au composite electrodes, Pt electrodes, Ni/graphene composite electrodes, and the like. Specifically, In the embodiment of the present application, the material of the first electrode 41 includes any one or a mixture of Au, Pt, Ag, In, Ti, Ni, Cu, or graphene; the material of the second electrode 42 includes any one or a mixture of Au, Pt, Ag, In, Ti, Ni, Cu and graphene. The first electrode 41 and the second electrode 42 of the embodiment of the present application may be prepared by any one or more of sputtering, thermal evaporation, spin coating, or pressing methods.

Claims (10)

1. A self-powered ultraviolet detector based on NiO/GaNp-n junction is characterized in that:
the NiO/GaNp-n junction structure comprises a substrate, an n-GaN layer located above the substrate, a p-NiO layer located on the side, away from the substrate, of the n-GaN layer, a first electrode and a second electrode, wherein the first electrode is located on the side, away from the n-GaN layer, of the p-NiO layer, the second electrode is abutted to the n-GaN layer, and the n-GaN layer and the p-NiO layer form a NiO/GaNp-n junction.
2. The NiO/GaNp-n junction-based self-powered ultraviolet detector of claim 1, wherein the second electrode is located on a side of the n-GaN layer facing away from the substrate, the p-NiO layer has a smaller contact area with the n-GaN layer than a surface area of the n-GaN layer facing the p-NiO layer, and the second electrode is not in contact with the p-NiO layer.
3. The NiO/GaNp-n junction-based self-powered ultraviolet detector of claim 1, wherein the p-NiO layer has a thickness of 100nm to 5 μ ι η; the thickness of the n-GaN layer is 500 nm-4.5 mu m.
4. The NiO/GaNp-n junction-based self-powered ultraviolet detector as claimed in claim 3, wherein the p-NiO layer is grown by magnetron sputtering at a sputtering pressure of 1.0-3.0 Pa and a sputtering power of 50-300W, and O is in a sputtering gas2The flow ratio of the Ar to the catalyst is 1 to 99 percent; the sputtering time is 1-10 h, and the sputtering temperature is 25-500 ℃.
5. The NiO/GaNp-n junction-based self-powered ultraviolet detector as claimed in claim 3, wherein the n-GaN layer is grown by Metal Organic Chemical Vapor Deposition (MOCVD) method, gallium metal is used as a gallium source, ammonia gas is used as a nitrogen source, the volume flow rate of gallium metal is 0.5-10 mL/min, the volume flow rate of ammonia gas is 50-200 mL/min, and the reaction temperature of MOCVD is 400-1100 ℃.
6. The NiO/GaNp-n junction-based self-powered ultraviolet detector of claim 1, wherein the substrate is a flexible substrate or a rigid substrate.
7. The NiO/GaNp-n junction-based self-powered ultraviolet detector as claimed In claim 1, wherein the material of the first electrode comprises any one or a mixture of Au, Pt, Ag, In, Ti, Ni, Cu or graphene; the second electrode is made of any one or a mixture of Au, Pt, Ag, In, Ti, Ni, Cu and graphene.
8. A method for preparing the NiO/GaNp-n junction-based self-powered ultraviolet detector as claimed in any of claims 1-7, comprising the following steps:
growing an n-GaN layer on the substrate by adopting a metal organic chemical vapor deposition method;
growing a p-NiO layer on one surface of the GaN layer, which is far away from the substrate, through magnetron sputtering;
and respectively evaporating a metal electrode on the n-GaN layer and the p-NiO layer by using a thermal evaporation method, namely forming a second electrode on the n-GaN layer and a first electrode on the p-NiO layer.
9. The method of claim 8, wherein growing the n-GaN layer on the substrate by metal organic chemical vapor deposition comprises:
and growing an n-GaN layer on the substrate by adopting a metal organic chemical vapor deposition method, wherein the metal gallium is used as a gallium source, ammonia gas is used as a nitrogen source, the volume flow of the metal gallium is 0.5-10 mL/min, and the volume flow of the ammonia gas is 50-200 mL/min, and the reaction temperature of the metal organic chemical vapor deposition is 400-1100 ℃.
10. The method of claim 8, wherein the magnetron sputtering growing the p-NiO layer on the side of the GaN layer opposite to the substrate comprises:
sputtering pressure of 1.0-3.0 Pa, sputtering power of 50-300W, and O in sputtering gas2The flow ratio of the Ar to the catalyst is 1 to 99 percent; and growing a p-NiO layer on the surface of the GaN layer, which is far away from the substrate, by magnetron sputtering by taking metallic nickel as a nickel source, wherein the sputtering time is 1-10 h, and the sputtering temperature is 25-500 ℃.
CN202110329571.XA 2021-03-29 2021-03-29 NiO/GaN p-n junction-based self-powered ultraviolet detector and preparation method thereof Pending CN113113507A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110329571.XA CN113113507A (en) 2021-03-29 2021-03-29 NiO/GaN p-n junction-based self-powered ultraviolet detector and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110329571.XA CN113113507A (en) 2021-03-29 2021-03-29 NiO/GaN p-n junction-based self-powered ultraviolet detector and preparation method thereof

Publications (1)

Publication Number Publication Date
CN113113507A true CN113113507A (en) 2021-07-13

Family

ID=76712448

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110329571.XA Pending CN113113507A (en) 2021-03-29 2021-03-29 NiO/GaN p-n junction-based self-powered ultraviolet detector and preparation method thereof

Country Status (1)

Country Link
CN (1) CN113113507A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114203329A (en) * 2021-12-13 2022-03-18 中国核动力研究设计院 GaN-based Schottky diode, beta nuclear battery and preparation method thereof
CN115219578A (en) * 2022-07-20 2022-10-21 江南大学 GaN sensor for detecting new coronavirus and detection method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114203329A (en) * 2021-12-13 2022-03-18 中国核动力研究设计院 GaN-based Schottky diode, beta nuclear battery and preparation method thereof
CN115219578A (en) * 2022-07-20 2022-10-21 江南大学 GaN sensor for detecting new coronavirus and detection method
CN115219578B (en) * 2022-07-20 2023-11-17 江南大学 GaN sensor for detecting novel coronavirus and detection method

Similar Documents

Publication Publication Date Title
CN109461790B (en) Gallium oxide/graphene heterojunction zero-power-consumption photoelectric detector and manufacturing method thereof
CN110459640B (en) Based on Cs3Cu2I5Self-powered perovskite photoelectric detector and preparation method thereof
CN113113507A (en) NiO/GaN p-n junction-based self-powered ultraviolet detector and preparation method thereof
CN106340551B (en) Based on Mg beta-Ga2O3Zero-power-consumption solar blind ultraviolet detector of/NSTO heterojunction and preparation method thereof
CN109037374A (en) Based on NiO/Ga2O3Ultraviolet photodiode and preparation method thereof
CN100568547C (en) The preparation method of ZnO/ nanometer diamond coplane grid ultraviolet light detector
CN112103354A (en) Transparent Ga2O3P-i-n heterostructure solar-blind ultraviolet light detector and preparation method thereof
CN111799378B (en) Photoelectric detector based on two-dimensional material and gallium nitride thin film double heterojunction and preparation method thereof
CN110729376A (en) Ultraviolet detector based on nickel oxide/beta-gallium sesquioxide heterojunction and preparation method thereof
Young et al. ZnO nanorod humidity sensor and dye-sensitized solar cells as a self-powered device
CN109148635A (en) CuAlO2/Ga2O3Ultraviolet photodiode and preparation method
CN108767048B (en) Flexible solar blind detector and preparation method thereof
CN110828589B (en) Flexible solar blind ultraviolet photoelectric detector and preparation method thereof
CN112310239B (en) Method for preparing high-performance ZnO film ultraviolet detector by ALD (atomic layer deposition) combined silver nanowire enhancement method
CN113113499A (en) PN junction type gallium oxide based self-powered ultraviolet detector and preparation method thereof
CN116387398A (en) Method for improving performance of AlGaN/GaN-based ultraviolet photoelectric detector through F-based plasma treatment
CN114015990B (en) Preparation method and application of nickel oxide-gold-zinc oxide coaxial nano-array
CN111354804B (en) Self-driven photoelectric detector based on Si cone/CuO heterojunction and preparation method thereof
CN210607281U (en) InGaN nano-pillar array-based GSG (generalized Gaussian mixture) type tunable photoelectric detector
CN110085679A (en) N-shaped boron nitride pellicle/p-type monocrystalline silicon heterogenous pn junction antetype device and preparation method
Chou et al. Characteristics of Ultraviolet Photodetector Based on Li-doped ZnO Nanorods
CN111816715B (en) Zinc oxide nanowire array ultraviolet detector and preparation method thereof
CN110808308B (en) Ultraviolet detector and preparation method thereof
CN109935653A (en) A kind of low temperature preparation transparent red is outer-method of ultraviolet detector
Sarmah et al. Photo sensing properties of porous silicon (PS): p-Si and ZnO-PS: p-Si-MSM devices: A comparative analysis

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination