CN113113438A - 高性能图像传感器及其制备方法 - Google Patents
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- 238000002360 preparation method Methods 0.000 title abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 87
- 238000000034 method Methods 0.000 claims abstract description 30
- 238000005530 etching Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000000151 deposition Methods 0.000 claims abstract description 6
- 238000001259 photo etching Methods 0.000 claims abstract description 5
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052710 silicon Inorganic materials 0.000 abstract description 8
- 239000010703 silicon Substances 0.000 abstract description 8
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000008021 deposition Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
本发明公开了一种高性能图像传感器及其制备方法,像素结构使用沟槽式通孔连接上、下两层金属,该沟槽式通孔与上层金属形成与像素大小相同的网格,作为金属遮蔽结构。在下层金属制程之后,沉积一层SiN衬底,作为像素区的沟槽式通孔和逻辑区的金属孔的终止层;在孔刻蚀制程过程最后增加一步对SiN具有高选择比的蚀刻工艺,使沟槽式通孔和金属孔既与下层金属链接,又停留在介质氧化层上,形成金属遮蔽;之后,在沟槽式通孔上溅射上层金属,并通过光刻形成相同宽度的金属遮蔽结构。可以减小在进行光通道蚀刻过程中等离子体对硅表面的损伤,减小暗电流和噪声。同时,金属遮蔽结构可以将斜入射光折射到像素单元表面,减小串扰。
Description
技术领域
本发明涉及一种图像传感器,尤其涉及一种高性能图像传感器及其制备方法。
背景技术
图像传感器是常用的半导体器件,为了减少像素堆叠高度和使微透镜更加贴近光电传感器,如图1a、图1b所示,目前普遍是将彩色滤光片阵列(color filter array CFA)和微透镜埋入内嵌区。
目前制程的缺点在于:
内嵌区(Trench Etch area)底部不平,图像传感器四周与中心厚度不同,光通路发生变化,造成色差(color shading)现象。
内嵌(trench etch)过程中所使用等离子体(plasma)的电荷(charging)累积会对硅衬底损伤,形成缺陷。而光电二极管(Photodiode PD)表面的区域的缺陷是暗电流和噪声的来源之一。所以,内嵌(trench etch)工艺导致图像传感器暗电流和噪声偏大,影响图像传感器性能。
发明内容
本发明的目的是提供一种高性能图像传感器及其制备方法。
本发明的目的是通过以下技术方案实现的:
本发明的高性能图像传感器,包括像素结构,所述像素结构使用沟槽式通孔连接上、下两层金属,该沟槽式通孔与上层金属形成与像素大小相同的网格,作为金属遮蔽结构。
上述的高性能图像传感器的制备方法,包括步骤:
在下层金属制程之后,沉积一层SiN衬底,作为像素区的沟槽式通孔和逻辑区的金属孔的终止层;
在孔刻蚀制程过程最后增加一步对SiN具有高选择比的蚀刻工艺,使沟槽式通孔和金属孔既与下层金属链接,又停留在介质氧化层上,形成金属遮蔽;
之后,在沟槽式通孔上溅射上层金属,并通过光刻形成相同宽度的金属遮蔽结构。
由上述本发明提供的技术方案可以看出,本发明实施例提供的高性能图像传感器及其制备方法,将金属遮蔽(metal shield)结构与衬底相连,可以减小在进行光通道蚀刻过程中等离子体(plasma)对硅表面的损伤,减小暗电流和噪声。同时,金属遮蔽(metalshield)结构可以将斜入射光折射到像素(pixel)单元表面,减小串扰。
附图说明
图1a为现有技术中具有光通道的图像传感器示意图;
图1b为现有技术中光通道结构蚀刻过程示意图;
图2a为本发明实施例提供的高性能图像传感器结构示意图;
图2b为本发明实施例光通道结构蚀刻过程示意图;
图3为本发明实施例沟槽式通孔(trench Via)与上层金属形成的金属遮蔽侧视图;
图4为本发明实施例沟槽式通孔(trench Via)与上层金属形成的金属遮蔽俯视图。
图中:
101:硅基底(Silicon),102:浅槽隔离(STI),103:光电二极管(Photodiode PD),104:逻辑区源漏注入(Source/Drain IMP),105:多晶硅栅(Poly Gate),106:接触孔(Contact),107:金属1(Metal1),108:通孔1(Via1),109:金属2(Metal2),110:通孔2(Via2),111:彩色滤光片阵列(color filter array CFA),112:金属3(Metal3),113:通孔3(Via3),114:微透镜(Mirco Lens),115:介质氧化层(IMD),116:内嵌区(Trench Etcharea),117:金属4(Metal4);
201:硅基底(Silicon),202:浅槽隔离(STI),203:光电二极管(Photodiode PD),204:逻辑区源漏注入(Source/Drain IMP),205:多晶硅栅(Poly Gate),206:接触孔(Contact),207:金属1(Metal1),208:通孔1(Via1),209:金属2(Metal2),210:通孔2(Via2),211:彩色滤光片(color filter),212:金属3(Metal3),213:通孔3(Via3),214:微透镜(Mirco Lens),215:介质氧化层(IMD oxide),216:内嵌区(Trench Etch area),217:金属4(Metal4),218:沟槽式通孔(trench Via),219:氮化硅(SiN),220:金属5(Metal5),301:金属6(Metal6),302:沟槽式通孔(trench Via),303:像素单元(Pixel Cell),304:图像传感器芯片(CIS Chip)。
具体实施方式
下面将对本发明实施例作进一步地详细描述。本发明实施例中未作详细描述的内容属于本领域专业技术人员公知的现有技术。
本发明的高性能图像传感器,其较佳的具体实施方式如图2a、图3、图4所示:
包括像素结构,所述像素结构使用沟槽式通孔连接上、下两层金属,该沟槽式通孔与上层金属形成与像素大小相同的网格,作为金属遮蔽结构。
所述下层金属上方设有SiN衬底,所述金属遮蔽结构与所述SiN衬底相连。
上述的高性能图像传感器的制备方法,如图2b所示,包括步骤:
在下层金属制程之后,沉积一层SiN衬底,作为像素区的沟槽式通孔和逻辑区的金属孔的终止层;
在孔刻蚀制程过程最后增加一步对SiN具有高选择比的蚀刻工艺,使沟槽式通孔和金属孔既与下层金属链接,又停留在介质氧化层(IMD Oxide)上,形成金属遮蔽;
之后,在沟槽式通孔上溅射上层金属,并通过光刻形成相同宽度的金属遮蔽结构。
本发明的高性能图像传感器,像素结构使用沟槽式通孔(trench Via)替代金属孔(Hole Via)连接两层金属。该层沟槽式通孔(trench Via)与上层金属形成与像素大小相同的网格,作为金属遮蔽(metal shield)。将金属遮蔽(metal shield)结构与衬底相连,可以减小在进行光通道蚀刻过程中等离子体(plasma)对硅表面的损伤,减小暗电流和噪声。同时,金属遮蔽(metal shield)结构可以将斜入射光折射到像素(pixel)单元表面,减小串扰。
本发明像素结构是在金属(Metal)(n)制程之后。沉积一层氮化硅,作为像素区沟槽式通孔(trench Via)(n)和逻辑区金属孔(Hole Via)(n)的终止层(stop layer)。原有孔刻蚀(Via etch)制程过程最后增加一步对SiN具有高选择比的蚀刻工艺,使沟槽式通孔(trench Via)和金属孔(Hole Via)可以既与下层金属链接,又可以停留在介质氧化层(IMDOxide)上,形成金属遮蔽。之后在沟槽式通孔(trench Via)上溅射上层金属,并通过光刻形成相同宽度的金属遮蔽。之后的制程与传统图像传感器相同。
本发明优点:
将金属遮蔽上层金属链接衬底地(GND),可以在内嵌(trench etch)过程中累积的charging通过衬底转移,减少电荷积累对光电二极管(Photodiode PD)表面的损伤,减少暗电流和噪声。
终止层(stop layer)SiN的使用不仅作为沟槽式通孔(trench Via)和金属孔(Hole Via)的终止层(stop layer),同样也作为光通道(trench)的终止层(stop layer),提高光通道(trench)的均匀性,降低色差(color shading)。
非垂直入射的光照在金属遮蔽(metal shield)的侧壁上形成反射,不会照射入相邻的像素单元,可以有效的减少光学串扰(cross talk)的产生。
本发明只在传统的工艺制程过程中仅增加一道薄膜沉积,并未增加额外成本,可以与当前制程相兼容。
以上所述,仅为本发明较佳的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明披露的技术范围内,可轻易想到的变化或替换,都应涵盖在本发明的保护范围之内。因此,本发明的保护范围应该以权利要求书的保护范围为准。
Claims (3)
1.一种高性能图像传感器,其特征在于,包括像素结构,所述像素结构使用沟槽式通孔(218)连接上、下两层金属,该沟槽式通孔(218)与上层金属(220)形成与像素大小相同的网格,作为金属遮蔽结构。
2.根据权利要求1所述的高性能图像传感器,其特征在于,所述下层金属(209)上方设有SiN衬底(219),所述金属遮蔽结构与所述SiN衬底(219)相连。
3.一种权利要求1或2所述的高性能图像传感器的制备方法,其特征在于,包括步骤:
在下层金属(209)制程之后,沉积一层SiN衬底(219),作为像素区的沟槽式通孔(218)和逻辑区的金属孔(210)的终止层;
在孔刻蚀制程过程最后增加一步对SiN具有高选择比的蚀刻工艺,使沟槽式通孔(218)和金属孔(210)既与下层金属(209)链接,又停留在介质氧化层(215)上,形成金属遮蔽;
之后,在沟槽式通孔(218)上溅射上层金属(220),并通过光刻形成相同宽度的金属遮蔽结构。
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