CN113106538B - 制备单晶硅的坩埚组件以及制备炉 - Google Patents
制备单晶硅的坩埚组件以及制备炉 Download PDFInfo
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- CN113106538B CN113106538B CN202110322095.9A CN202110322095A CN113106538B CN 113106538 B CN113106538 B CN 113106538B CN 202110322095 A CN202110322095 A CN 202110322095A CN 113106538 B CN113106538 B CN 113106538B
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- layer
- crucible assembly
- heat
- heat conduction
- inner pot
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202110322095.9A CN113106538B (zh) | 2021-03-25 | 2021-03-25 | 制备单晶硅的坩埚组件以及制备炉 |
Applications Claiming Priority (1)
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CN202110322095.9A CN113106538B (zh) | 2021-03-25 | 2021-03-25 | 制备单晶硅的坩埚组件以及制备炉 |
Publications (2)
Publication Number | Publication Date |
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CN113106538A CN113106538A (zh) | 2021-07-13 |
CN113106538B true CN113106538B (zh) | 2022-07-22 |
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CN202110322095.9A Active CN113106538B (zh) | 2021-03-25 | 2021-03-25 | 制备单晶硅的坩埚组件以及制备炉 |
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CN (1) | CN113106538B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN115404447B (zh) * | 2022-09-29 | 2024-06-04 | 京东方科技集团股份有限公司 | 坩埚组件以及具有其的蒸镀装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01317188A (ja) * | 1988-06-17 | 1989-12-21 | Nkk Corp | 半導体単結晶の製造方法及び装置 |
JPH09255474A (ja) * | 1996-03-22 | 1997-09-30 | Sumitomo Sitix Corp | 単結晶成長装置 |
CN204080179U (zh) * | 2014-08-07 | 2015-01-07 | 英利能源(中国)有限公司 | 一种多晶铸锭炉热场结构 |
CN209537669U (zh) * | 2019-01-17 | 2019-10-25 | 赛维Ldk太阳能高科技(新余)有限公司 | 一种坩埚 |
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2021
- 2021-03-25 CN CN202110322095.9A patent/CN113106538B/zh active Active
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Address after: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Patentee after: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. Address before: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Patentee before: XUZHOU XINJING SEMICONDUCTOR TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20230703 Address after: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Patentee after: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. Patentee after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Patentee before: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. |