CN113098451A - Broadband microwave narrow pulse modulator based on double-balance structure - Google Patents
Broadband microwave narrow pulse modulator based on double-balance structure Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/01—Shaping pulses
- H03K5/04—Shaping pulses by increasing duration; by decreasing duration
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K7/00—Modulating pulses with a continuously-variable modulating signal
- H03K7/08—Duration or width modulation ; Duty cycle modulation
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Abstract
The invention discloses a broadband microwave narrow pulse modulator based on a double-balanced structure, and belongs to the field of microwave pulse modulators. The structure comprises a dielectric substrate, an intermediate frequency input circuit arranged in the middle of the dielectric substrate, and local oscillator baluns and radio frequency baluns arranged on the left side and the right side of the dielectric substrate. The balun is used as a non-equilibrium signal conversion structure, and has the advantages of high isolation, large dynamic range, ultra wide band and the like; two baluns are connected with a diode bridge to perform pulse modulation on the continuous wave signal so as to output a microwave pulse signal with high isolation. The microwave narrow pulse modulator has the advantages of low manufacturing cost, excellent pulse modulation performance and the like.
Description
Technical Field
The invention belongs to the field of microwave pulse modulators, and particularly relates to a broadband microwave narrow pulse modulator based on a double-balance structure.
Background
Microwave signal sources (microwave signal generators) are instrument devices that generate microwave signals, and are the most basic components that constitute modern microwave systems and microwave measurement systems. The microwave sinusoidal signal generator can generate microwave sinusoidal signals with different frequencies and amplitudes, and the frequency, the amplitude and the modulation characteristics of output signals of the microwave sinusoidal signal generator can be adjusted within specified limits. The modulation pulse of the microwave signal source is widely applied to the fields of pulse system radar systems, particle accelerators, guidance heads, measurement and calibration of radio frequency microwave systems, microwave communication transceiver systems, electronic countermeasure, biomedicine and the like. In addition, "microwave-excited thermoacoustic imaging" based on microwave narrow-pulse signals is a hot spot of research in the field of biomedical imaging at present. The imaging resolution has a direct relation with the width of the microwave pulse, and researches find that the imaging resolution can be improved and a better imaging effect can be obtained by reducing the width of the microwave pulse and improving the peak power of the microwave pulse. Meanwhile, the narrower the microwave pulse width, the higher the excitation efficiency of the thermoacoustic effect and the smaller the excitation energy density, and the less the potential thermal damage to the body.
At present, the microwave pulse modulators are researched at home and abroad mainly in two directions: one is to seek high isolation, and typically uses a PIN diode to make a microwave switch to implement pulse modulation, and the pulse modulator has the disadvantages of long response time, low modulation pulse repetition frequency, and the like. The other is a pulse modulator based on a vacuum electron tube, and the typical structure is that a pre-modulator transmits pushing pulse power to a modulation switch tube, and the modulation switch tube controls the on-off of electron beams of a microwave tube to generate microwave pulses. In this class of classical modulators, either soft, rigid, or linear modulators, it is difficult to form narrow pulses in nanoseconds. On the other hand, the vacuum electron tube has disadvantages of high loss, a large driving circuit, and cooling trouble.
Disclosure of Invention
Aiming at the defects of the existing pulse modulator, the invention provides a broadband microwave narrow pulse modulator based on a double-balanced structure, and the microwave narrow pulse modulator has the advantages of low manufacturing cost, excellent pulse modulation performance and the like.
The technical scheme adopted by the invention is as follows:
a broadband microwave narrow pulse modulator based on a double-balanced structure comprises a dielectric substrate, an intermediate frequency input circuit arranged in the middle of the dielectric substrate, and local oscillator baluns and radio frequency baluns arranged on the left side and the right side of the dielectric substrate.
The local oscillator balun and the radio frequency balun form a common ground on the back surface of the dielectric substrate through the annular metal grounding plate.
The local oscillator balun comprises an unbalanced input port P1, two balanced output ports P2 and P3, the radio frequency balun comprises an unbalanced output port P4 and two balanced input ports P5 and P6, wherein the input port P5 is arranged on the front side of the dielectric substrate, the input port P6 is arranged on the back side of the dielectric substrate, the output port P2 is bent upwards and led into the back side of the dielectric substrate through a metalized through hole, the output port P3 is bent downwards and led into the front side of the dielectric substrate through a metalized through hole, and the output ports P2 and P3 and the input ports P5 and P6 form a star-shaped diode bridge through four Schottky diodes.
The medium-frequency output circuit comprises a metal microstrip transmission line and a first high-impedance line which are arranged on the front surface of a dielectric substrate, and a second high-impedance line which is arranged on the back surface of the dielectric substrate, wherein one end of the metal microstrip transmission line is an input port P7, the other end of the metal microstrip transmission line is arranged to be a power division structure, one output end of the power division structure is connected with an output port P2 through the first high-impedance line, the other output end of the power division structure is communicated with the second high-impedance line through a metalized through hole, and the other end of the second high-impedance line.
The front surface of the dielectric substrate is also provided with a third high-impedance line, one end of the third high-impedance line is connected with the input port P5, and the other end of the third high-impedance line is connected with the annular metal grounding plate through a metalized through hole; and a fourth high-impedance line is further arranged on the back surface of the dielectric substrate, one end of the fourth high-impedance line is connected with the input port P6, and the other end of the fourth high-impedance line is connected with the annular metal grounding plate. Further, the lengths of the first high-impedance line and the second high-impedance line are the same; the third high-impedance line and the fourth high-impedance line have the same length.
Furthermore, the annular metal grounding plate is provided with two rectangular bulges for enabling the lengths of the first, second, third and fourth high-impedance lines to be 0.2 lambda-0.4 lambda, wherein lambda is the central frequency wavelength of the continuous wave signal.
Further, the local oscillator balun and the radio frequency balun are both double-sided asymptote microstrip baluns.
Furthermore, the dielectric substrate is made of rogers4003 dielectric material, the dielectric constant of the dielectric substrate is 3.55, and the thickness of the dielectric substrate is 0.508 mm.
Further, the Schottky diode is four MA4E1317 Schottky diodes with the same performance.
Further, the input port P1 inputs a continuous wave signal as a signal to be modulated, and the output ports P2 and P3 output balanced signals to be modulated; the intermediate frequency port P7 inputs a time domain square wave signal as a switch control signal; the input ports P5, P6 input the modulated pulse balance signal, and the output port P4 outputs the modulated pulse signal.
The balun adopted by the invention is an unbalanced-balanced signal conversion structure, and a structure formed by two baluns is called a double-balanced structure, so that the balun has the advantages of high isolation, large dynamic range, ultra wide band and the like. The invention uses the form that two baluns are connected with a diode bridge to carry out pulse modulation on a continuous wave signal so as to output a microwave pulse signal with high isolation. Continuous wave signals are input into a local oscillation port P1 of the modulator to be used as signals to be modulated, time domain square wave signals are input into an intermediate frequency port P7 to be used as switching signals, and broadband narrow pulse modulation signals are output from a radio frequency port P4.
In the invention, the unbalanced signal is converted into a balanced signal through the double-sided asymptote microstrip balun. According to the odd-even mode analysis method, the unbalanced continuous wave signal input by the local oscillator input port P1 can be decomposed into an even mode signal and an odd mode signal, and because the local oscillator balun even mode impedance is very large, the input even mode signal is restrained from reaching the output port, so that only the odd mode signal is smoothly output to the two output ports P2 and P3; the modulated pulse balanced signals input by the radio frequency balun input ports P5 and P6 are subjected to a balance-unbalance conversion function of the radio frequency balun, and the modulated pulse signals are output by the radio frequency balun output port P4.
The pulse modulation process is as follows: when the time domain square wave signal input by the intermediate frequency input port P7 is at a high level, the diode bridge is conducted, and the balance signals output by the local oscillator balun output ports P2 and P3 are output to the radio frequency balun input ports P5 and P6; when the time domain square wave signal is at a low level, the diode bridge is cut off, and the continuous wave signal cannot be transmitted to the radio frequency port, so that the microwave pulse modulation process is realized.
Compared with the traditional microwave pulse modulator, the microwave pulse modulator has the following beneficial effects:
1. the invention adopts a double-balance structure formed by the Schottky diode bridge and the two ultra-wideband microstrip baluns as the pulse modulator, has high switching speed, can reach the rising and falling edges of ns level, and reduces the microwave pulse modulation to the magnitude of several ns.
2. The invention designs the local oscillator and the radio frequency balun by adopting a form of the double-sided microstrip gradient balun, so that the pulse modulator realizes the ultra-wide band characteristic, and the application frequency range of the microwave pulse modulator is improved to the ultra-wide band of 10 GHz.
3. The invention adopts four low-barrier Schottky diodes with completely same performance to form a diode bridge, and the diode bridge is firmly welded on four output ports of a local oscillator and a radio frequency balun in a soldering mode, and the consistency of the Schottky diodes determines the high isolation of the microwave pulse modulator.
4. The circuit of the invention is simple to manufacture, adopts a passive double-balanced structure to realize the broadband pulse modulator, does not need an additional bias circuit, and ensures that the performance of the pulse modulator is very reliable.
Drawings
FIG. 1 is a schematic diagram of a microwave narrow pulse modulator design as used herein;
FIG. 2 is a circuit schematic of a passive double balanced mixer as designed herein;
FIG. 3(a) is a schematic diagram of a circuit structure on an insulating dielectric substrate;
FIG. 3(b) is a schematic diagram of the circuit structure of the lower surface of the insulating dielectric substrate;
FIG. 4(a) is a diagram of the 1GHz output signal of the broadband microwave narrow pulse source of the invention;
FIG. 4(b) is a diagram of the 4GHz output signal of the broadband microwave narrow pulse source of the invention;
FIG. 4(c) is a diagram of the 8GHz output signal of the broadband microwave narrow pulse source of the present invention;
FIG. 4(d) is a diagram of the 12GHz output signal of the broadband microwave narrow-pulse source of the present invention;
FIG. 5 shows the result of the isolation design of the output signal of the broadband microwave narrow-pulse source according to the present invention; 1, a local oscillator balun input port P1; 2. a local oscillator balun output port P2; 3. a local oscillator balun output port P3; 4. a radio frequency bus output port P4; 5. a radio frequency balun input port P5; 6. a radio frequency balun input port P6; 7. an intermediate frequency input port P7; 8. a first high-impedance line; 9. a second high-impedance line; 10. a third high-impedance line; 11. a fourth high-impedance line; 12. a power division structure; 13. a first rectangular protrusion; 14. a second rectangular protrusion; 15. an annular metal ground plate; 16. a metal microstrip transmission line; 17. a dielectric substrate.
Detailed Description
In order to explain the advantages, technical solutions and principles of the present invention in detail, further description of the present application will be provided below with reference to the accompanying drawings of the specification in conjunction with embodiments. It should be noted that the specific examples given below are only for illustrating the present invention in detail, and do not constitute any limitation to the present application.
A broadband microwave narrow pulse modulator based on a double-balanced structure comprises a dielectric substrate, an intermediate frequency input circuit arranged in the middle of the dielectric substrate, and local oscillator baluns and radio frequency baluns arranged on the left side and the right side of the dielectric substrate; the local oscillator balun and the radio frequency balun are microstrip line gradient baluns; the dielectric substrate is 37.2mm long and 28.8mm wide, the insulating dielectric plate adopts a rogers4003 substrate, the substrate thickness adopts 0.508mm, and the thickness of the substrate is 0.1-1mm, which can well meet the design requirements of the invention. The width of a 50-ohm characteristic impedance microstrip line (namely, microstrip lines with ports being P1, P4 and P7 respectively) based on the dielectric substrate is 1.1mm, and the width of a 70-ohm characteristic impedance parallel strip line (namely, microstrip lines with ports being P2, P3, P5 and P6 respectively) based on the dielectric substrate is 0.8 mm.
The local oscillator balun and the radio frequency balun form a common ground on the back surface of the dielectric substrate through the annular metal grounding plate.
The local oscillator balun comprises an unbalanced input port P1, two balanced output ports P2 and P3, the radio frequency balun comprises an unbalanced output port P4 and two balanced input ports P5 and P6, wherein the input port P5 is arranged on the front side of the dielectric substrate, the input port P6 is arranged on the back side of the dielectric substrate, the output port P2 is bent upwards and led into the back side of the dielectric substrate through a metalized through hole, the output port P3 is bent downwards and led into the front side of the dielectric substrate through a metalized through hole, and the output ports P2 and P3 and the input ports P5 and P6 form a star-shaped diode bridge through four Schottky diodes. The diode bridge is formed by 4 schottky diodes of the MA4E1317 type manufactured by MACOM corporation, which have a standard junction capacitance of 0.02pF, a length of 0.66mm and a width of 0.33 mm. The switch isolation degree of the diode is 40dB, and the diode can play a good role in microwave pulse modulation.
The medium-frequency output circuit comprises a metal microstrip transmission line and a first high-impedance line which are arranged on the front surface of the dielectric substrate, and a second high-impedance line which is arranged on the back surface of the dielectric substrate, wherein the length of the first high-impedance line and the width of the second high-impedance line are both 8mm, and the width of the first high-impedance line and the width of the second high-impedance line are both 0.2 mm.
The front surface of the dielectric substrate is also provided with a third high-impedance line, the back surface of the dielectric substrate is also provided with a fourth high-impedance line, the length of the third high-impedance line and the length of the fourth high-impedance line are 6mm, and the width of the third high-impedance line and the width of the fourth high-impedance line are both 0.2 mm.
The grounding plate is composed of an annular metal grounding plate, a first rectangular bulge and a second rectangular bulge. The first rectangular projection functions to keep the lengths of the first and second high-impedance lines consistent and in the range of 0.2 lambda-0.4 lambda, the second rectangular projection functions to keep the lengths of the third and fourth high-impedance lines consistent and in the range of 0.2 lambda-0.4 lambda, lambda is the central frequency wavelength of a continuous wave signal, and the second rectangular projection is also used for forming the grounding part of the intermediate-frequency metal microstrip transmission line. Wherein the first rectangular protrusion is 14mm long and 4.5mm wide, and the second rectangular protrusion is 10mm long and 4.5mm wide.
The embodiment works within a frequency band of 1-12GHz, the output result of the modulation pulse waveform of the pulse modulator is shown in figure 4, the pulse modulator can generate a pulse output signal with a 1-12GHz broadband, and the rising edge/falling edge is within several ns; pulse modulation signal isolation as shown in fig. 5, the pulse signal isolation modulated by the pulse modulator is greater than 50dB in the whole working frequency band, and excellent pulse modulation performance is shown.
The above embodiments are intended to be illustrative and not limiting. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. Moreover, in the foregoing detailed description, various features may be combined to simplify the present disclosure. While various embodiments of the invention have been described, those of ordinary skill in the art will recognize that many more embodiments and implementations are possible within the scope of the invention. All equivalent changes and modifications made according to the disclosure of the present invention shall be covered by the protection scope of the present invention.
Claims (7)
1. A broadband microwave narrow pulse modulator based on a double-balanced structure is characterized by comprising a dielectric substrate, an intermediate frequency input circuit arranged in the middle of the dielectric substrate, local oscillator baluns and radio frequency baluns, wherein the local oscillator baluns and the radio frequency baluns are arranged on the left side and the right side of the dielectric substrate;
the local oscillator balun and the radio frequency balun form a common ground on the back of the dielectric substrate through an annular metal grounding plate;
the local oscillator balun comprises an unbalanced input port P1, two balanced output ports P2 and P3, the radio frequency balun comprises an unbalanced output port P4 and two balanced input ports P5 and P6, wherein the input port P5 is arranged on the front side of the dielectric substrate, the input port P6 is arranged on the back side of the dielectric substrate, the output port P2 is bent upwards and led into the back side of the dielectric substrate through a metalized through hole, the output port P3 is bent downwards and led into the front side of the dielectric substrate through a metalized through hole, and the output ports P2 and P3 and the input ports P5 and P6 form a star-shaped diode bridge through four Schottky diodes;
the medium-frequency output circuit comprises a metal microstrip transmission line and a first high-impedance line which are arranged on the front surface of a medium substrate, and a second high-impedance line which is arranged on the back surface of the medium substrate, wherein one end of the metal microstrip transmission line is an input port P7, the other end of the metal microstrip transmission line is a power division structure, one output end of the power division structure is connected with an output port P2 through the first high-impedance line, the other output end of the power division structure is communicated with the second high-impedance line through a metalized through hole, and the other end of the second high-impedance line is connected with;
the front surface of the dielectric substrate is also provided with a third high-impedance line, one end of the third high-impedance line is connected with the input port P5, and the other end of the third high-impedance line is connected with the annular metal grounding plate through a metalized through hole; and a fourth high-impedance line is further arranged on the back surface of the dielectric substrate, one end of the fourth high-impedance line is connected with the input port P6, and the other end of the fourth high-impedance line is connected with the annular metal grounding plate.
2. The broadband microwave narrow pulse modulator based on the double balanced structure as claimed in claim 1, wherein the lengths of the first high impedance line and the second high impedance line are the same; the third high-impedance line and the fourth high-impedance line have the same length.
3. The broadband microwave narrow pulse modulator based on the double balanced structure as claimed in claim 2, wherein the annular metal ground plate is provided with two rectangular protrusions for making the lengths of the first, second, third and fourth high impedance lines 0.2 λ -0.4 λ, λ being the center frequency wavelength of the continuous wave signal.
4. The broadband microwave narrow pulse modulator based on the double-balanced structure as claimed in claim 1, 2 or 3, wherein the local oscillator balun and the radio frequency balun are both double-sided asymptotic microstrip baluns.
5. The broadband microwave narrow pulse modulator based on the double balanced structure as claimed in claim 4, wherein the dielectric substrate is made of rogers4003 dielectric material, the dielectric constant of the rogers4003 dielectric material is 3.55, and the thickness of the dielectric substrate is 0.508 mm.
6. The broadband microwave narrow pulse modulator based on the double balanced structure as claimed in claim 4, wherein the Schottky diodes are four MA4E1317 Schottky diodes with the same performance.
7. The broadband microwave narrow pulse modulator based on the double balanced structure as claimed in claim 1, wherein the input port P1 inputs continuous wave signal as the signal to be modulated, and the output ports P2, P3 output balanced signal to be modulated; the intermediate frequency port P7 inputs a time domain square wave signal as a switch control signal; the input ports P5, P6 input the modulated pulse balance signal, and the output port P4 outputs the modulated pulse signal.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113824433A (en) * | 2021-08-26 | 2021-12-21 | 电子科技大学 | Pulse modulator based on Schottky diode cascade connection |
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2021
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Cited By (2)
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| CN113824433B (en) * | 2021-08-26 | 2023-08-25 | 电子科技大学 | Pulse modulator based on schottky diode cascade |
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