CN113097844B - Single frequency Q-switching laser - Google Patents

Single frequency Q-switching laser Download PDF

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CN113097844B
CN113097844B CN202110360037.5A CN202110360037A CN113097844B CN 113097844 B CN113097844 B CN 113097844B CN 202110360037 A CN202110360037 A CN 202110360037A CN 113097844 B CN113097844 B CN 113097844B
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polarization
mode
fiber
laser
optical fiber
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CN113097844A (en
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孙豹
冯畅
李帅
张旨遥
张尚剑
刘永
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University of Electronic Science and Technology of China
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/10061—Polarization control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H01S3/06708—Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering
    • H01S3/06745—Tapering of the fibre, core or active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08054—Passive cavity elements acting on the polarization, e.g. a polarizer for branching or walk-off compensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/0915—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light
    • H01S3/0933—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light of a semiconductor, e.g. light emitting diode

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

The invention discloses a single-frequency Q-switched laser, in particular to a single-frequency Q-switched laser based on a whispering gallery mode microcavity and a nonlinear polarization rotation technology, which is used as an optical fiber loop without an optical filter, and a single-mode semiconductor laser pumps a gain medium; a coupling system consisting of a whispering gallery mode micro-sphere cavity with a high Q value and a tapered optical fiber is used as a mode selection filtering structure to realize a narrow-band filtering function, and the narrow-band mode is selected through the whispering gallery mode micro-sphere cavity, so that narrow-linewidth single-tone Q laser output is obtained, and the structure is simple; the tuning of parameters such as the center wavelength, the pulse repetition frequency and the like of the narrow-linewidth single-tone Q laser can be realized by adjusting the polarization controller.

Description

Single frequency Q-switching laser
Technical Field
The invention belongs to the technical field of fiber laser, and particularly relates to a narrow-linewidth single-frequency Q-switching laser based on a whispering gallery mode microcavity and a nonlinear polarization rotation technology.
Background
The Q-switched laser has good application prospects in applications such as an optical fiber distributed sensing system and laser ranging, and research on the Q-switched technology of the laser is developed towards the directions of full optical fibers, narrow line width, narrow pulse width and high energy. Non-optical fiber type Q-switching modes comprise an acousto-optic Q switch, an electro-optic Q switch, a saturable absorber and the like, and have the defects of large insertion loss, low optical coupling efficiency with optical fibers and the like; the all-fiber Q-switching mode includes Sagnac loop Q-switching, bragg fiber grating Q-switching, fiber type saturable absorber Q-switching, and the like. The method mainly includes active Q-switching and passive Q-switching according to Q-switching mode. Active Q-tuning attempts use artificial physical effects to control cavity loss to achieve abrupt changes in Q-value, but usually involve modulation devices that complicate the laser structure. The passive Q-switched fiber laser is characterized in that a saturable absorption element with an absorption peak for laser wavelength is added into a cavity, the absorption coefficient of the saturable absorber is reduced to saturation along with the increase of light intensity, and the sudden change of the Q value in the cavity is realized through the change of absorption loss along with the change of the light intensity. Semiconductor saturable absorber mirrors (SESAMs) or Cr2+ ZnSe crystals are often used as saturable absorbers for passive Q-switching, but require additional optical components in the laser cavity, such as lenses, mirrors, circulators, etc., which lead to larger insertion losses and more complex designs. The nonlinear polarization rotation effect has the effect similar to that of a saturable absorber, the saturation absorption intensity of the nonlinear polarization rotation effect can be adjusted by simply rotating a polarization controller, and compared with other Q-switched lasers based on the saturable absorber, the nonlinear polarization rotation technology is a simpler and cheaper method for realizing passive Q-switched operation.
Q-switched lasers based on nonlinear polarization rotation techniques are generally multimode, although they exhibit spectrally filtering effects, i.e. channel spacing and transmission peaks are dependent on the cavity birefringence, due to the nonlinear polarization rotation exploiting the fiber birefringence effect. The bandwidth and the transmission peak of the filter can be changed by changing birefringence parameters, for example, strong birefringence can be caused by adjusting a polarization controller to extrude an optical fiber, but the change of the birefringence parameters brought by adjusting the polarization controller in an experiment is limited, and the length of a gain optical fiber or a common single-mode optical fiber is usually required to be changed to meet conditions, so that an ideal filtering effect cannot be achieved in a plurality of structures, particularly, a single-frequency Q-switched laser with a narrow line width cannot be achieved by only using a spectral filtering effect in the past research.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a single-frequency Q-switched laser.
The technical scheme of the invention is as follows: a single-frequency Q-switched laser comprises a single-mode semiconductor laser, a polarization-dependent integrated optical device, a first polarization controller, a second polarization controller, a single-mode optical fiber, a gain optical fiber, a tapered optical fiber and a whispering gallery mode microcavity; wherein, the first and the second end of the pipe are connected with each other,
the single-mode semiconductor laser is used as a pumping source of the system and provides pumping for the gain optical fiber;
the single-mode semiconductor laser is connected to a pump port of the polarization-related integrated optical device, and a common port of the polarization-related integrated optical device is sequentially connected with the gain fiber, the first polarization controller, the single-mode fiber, the second polarization controller and the tapered fiber and then connected to a signal port of the polarization-related integrated optical device to form a loop; the wavelength division multiplexer is used for combining the pump light and the intracavity laser into one beam; the coupler divides light into two beams according to proportion, one beam is used for light path circulation, the other part of light is output by a tap port of the polarization-dependent integrated optical device, and the polarization-dependent isolator is used as a polarizer and an analyzer at the same time;
the tapered optical fiber is used for coupling with the whispering gallery mode microcavity, and light is subjected to near-field coupling in the form of evanescent waves when passing through the tapered area of the tapered optical fiber.
Further, the first polarization controller converts linearly polarized light caused by the polarization-dependent isolator in the polarization-dependent integrated optical device into elliptically polarized light, and the second polarization controller continues to adjust the polarization distribution of light.
Further, the polarization controller is embodied as an embedded polarization controller.
Further, the gain fiber is a rare earth ion doped fiber.
Further, the shape of the whispering gallery mode microcavity can be a microdisk cavity, a microsphere cavity, a micro bottle cavity and the like, and the material is specifically silicon dioxide.
Further, the tapered fiber is drawn from a single mode fiber, and the two tapered regions are connected in front of each other;
further, the single-mode fiber is a G.652 standard single-mode fiber.
The invention has the beneficial effects that: the invention provides a single-frequency Q-switched laser based on a whispering gallery mode microcavity and a nonlinear polarization rotation technology, which is an optical fiber loop without an optical filter, and a single-mode semiconductor laser pumps a gain medium; a coupling system consisting of a whispering gallery mode micro-sphere cavity with a high Q value and a tapered optical fiber is used as a mode selection filtering structure to realize a narrow-band filtering function, and the whispering gallery mode micro-sphere is used for selecting a narrow-band mode, so that narrow-line-width single-tone Q laser output is obtained, and the structure is simple; the tuning of parameters such as the center wavelength, the pulse repetition frequency and the like of the narrow-linewidth single-tone Q laser can be realized by adjusting the polarization controller; the tuning of the central wavelength of the Q-switched laser can be realized by changing the diameter of the whispering gallery mode microcavity.
Drawings
FIG. 1 is a schematic structural diagram of an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of an embodiment of the present invention.
Fig. 3 is a schematic diagram of a spectrum of a narrow linewidth single-tone Q-laser generated by the Q-switched laser according to an embodiment of the present invention.
Fig. 4 is a time domain schematic diagram of a narrow linewidth single-tone Q laser generated by the Q-switched laser according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to fig. 1 to 4 of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1, the single-tone Q-switched laser based on the whispering gallery mode microcavity and the nonlinear polarization rotation technology, which is adopted by the present invention, is an optical fiber loop without an optical filter, and includes a single-mode semiconductor laser, a polarization-related integrated optical device, a polarization controller 1, a polarization controller 2, a single-mode optical fiber, a gain optical fiber, a tapered optical fiber, and a whispering gallery mode microcavity. The single-mode semiconductor laser is used as a pumping source of the system and provides pumping for the gain fiber.
The single-mode semiconductor laser is connected to a pump port of the polarization-related integrated optical device, and a common port of the polarization-related integrated optical device is sequentially connected with the gain optical fiber, the polarization controller 1, the single-mode optical fiber, the polarization controller 2 and the tapered optical fiber and then connected to a signal port of the polarization-related integrated optical device to form a loop; the wavelength division multiplexer is used for combining the pump light and the intracavity laser into one beam; the coupler divides light into two beams according to proportion, one beam is used for light path circulation, and the other beam is used for tap port output; the polarization-dependent isolator is used as both a polarizer and an analyzer, and only light energy with the same polarization direction passes through the polarization-dependent isolator, thereby ensuring that the light is transmitted in one direction in the cavity.
The tapered optical fiber is used for coupling with the whispering gallery mode microcavity, near-field coupling is carried out on light in an evanescent wave mode when the light passes through a tapered region of the tapered optical fiber, a light field of the evanescent wave and a light field of the whispering gallery mode of the microcavity have certain overlap, stable resonance can be formed in the whispering gallery mode microcavity when phase matching is met, and therefore the mode selection effect is achieved.
The polarization controller 1 converts the linearly polarized light caused by the polarization-dependent isolator into elliptically polarized light, and the polarization controller 2 continues to adjust the polarization distribution of the light. The combination of the polarization controller 1 and the polarization controller 2 realizes the control and adjustment of the polarization state of light, determines the loss in the cavity, realizes the adjustment of light intensity, and can realize the tuning of Q-switching pulse laser parameters by only adjusting the two polarization controllers when the power of the single-mode semiconductor laser is not changed.
It can be seen that, here, a polarization-dependent integrated optical device and two polarization controllers form a nonlinear polarization rotation structure in an optical fiber to realize pulse output, and by means of the whispering gallery mode microcavity, single-tone Q laser pulse output can be realized without an additional filtering structure, and the repetition frequency and average output power of single-frequency pulses can be adjusted by only adjusting the polarization controllers.
The gain fiber amplifies the pump light to a desired wavelength window.
And the single-mode optical fiber is used for compensating the nonlinear effect of the loop and connecting the gain optical fiber and the tapered optical fiber.
The single-mode semiconductor laser is a laser with stable wavelength and high output power, is used for providing pump light with adjustable power, and realizes the adjustment of light intensity in a cavity together with the polarization controller 1 and the polarization controller 2, the pump power of the single-mode Q-switched laser is set according to the comprehensive performance requirement of the single-mode Q-switched laser realized by the invention, the higher the pump power is, the shorter the period of Q-switched pulse is, the higher the repetition frequency is, the higher the energy of the single pulse is, and the single-mode semiconductor laser can be used for realizing the Q-switched output of different pulse parameters.
The wavelength selection of the wavelength division multiplexer and the splitting ratio of the coupler in the polarization-dependent integrated optical device herein are set by the overall performance requirements of the single-tone Q laser implemented according to the present invention. For example, when the gain fiber is an erbium-doped fiber, a wavelength division multiplexer of 980nm/1550nm is used. Different splitting ratios of the coupler can cause different optical powers participating in circulation in the annular cavity, if less light participates in circulation to form a loop, the gain in the cavity is insufficient, and oscillation cannot be started, so that more light generally continues to participate in laser generation in the cavity, and a small part of light is output.
The polarization-dependent isolator in the polarization-dependent integrated optical device is used as a polarizer and an analyzer at the same time, and ensures that light is transmitted in one direction in the cavity.
In this embodiment, the polarization controller is specifically an embedded polarization controller, which can be directly inserted into an optical fiber system, and the polarization state of light transmitted in the optical fiber is controlled without cutting off the system, so that the cavity length is not changed.
The polarization controller 1, the polarization controller 2, and the polarization-dependent isolator in the polarization-dependent integrated optical device form a nonlinear polarization rotation effect in the optical fiber, i.e., form an artificial saturable absorber.
In this embodiment, the gain fiber should have a higher doping concentration so as to achieve a higher absorption with a shorter length, ensure a shorter cavity length, facilitate mode selection of the whispering gallery mode microcavity, and have a length set according to the overall performance requirements of the single tone Q laser implemented. The length relates to the gain and dispersion problem in the cavity, the laser output state is influenced, and specific analysis can be carried out according to actual conditions.
In this embodiment, the gain fiber is a rare-earth ion doped fiber, which may be specifically an erbium-doped fiber, a thulium-doped fiber, an ytterbium-doped fiber, a mixed doped fiber, etc., and is determined by the wavelength of the single-frequency Q-switched laser implemented by the present invention. For example, erbium doped fibers are used to generate light in the 1530-1610 nm range and thulium doped fibers are suitable for the generation of light in the 1660-2000 nm range.
The shape of the whispering gallery mode microcavity can be a microdisk cavity, a microsphere cavity, a micro bottle cavity and the like, and the material can be silicon dioxide and the like as long as the Q value reaches 10 6 The method has a higher Q value and can correspond to a better mode selection effect.
The central wavelength of the Q-switched laser is related to the diameter of the whispering gallery mode microcavity, which is set by the wavelength requirements of a single-frequency Q-switched laser implemented according to the invention, in which whispering gallery mode microcavity the light meeting the resonance conditions satisfies: and m lambda = nL = Pi D, wherein m is the angular momentum mode number, lambda is the wavelength, n is the effective refractive index, L is the perimeter of the cavity, and D is the diameter of the microcavity, and the change of the Q-switched laser output wavelength can be realized by tuning the diameter of the whispering gallery mode microcavity.
The microcavity can adopt microcavities with cavity diameters easy to select such as a bottle mouth cavity and a micro-bubble cavity, and the resonant wavelength is controlled by adjusting the coupling position with the tapered optical fiber on the premise of not replacing the microcavity, so that Q-switched laser output with different wavelengths is realized;
the coupling system of the whispering gallery mode microcavity and the tapered fiber can be packaged to reduce environmental effects such as acoustic vibrations, temperature, etc.
The tapered fiber is drawn from a conventional single mode fiber, with the two tapered regions being in communication.
Here, the optical fibers of the device can be fused, so that the full optical fiber of the structure is ensured, and unnecessary loss is reduced.
The single-mode fiber is a G.652 standard single-mode fiber, and the length of the single-mode fiber is set by the comprehensive performance requirement of the single-frequency Q-switching laser realized according to the invention.
In order to make the technical solution, advantages and objects of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings in combination with the specific embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the invention.
Fig. 2 is a schematic structural diagram of an embodiment of a single-tone Q-switched laser based on a whispering gallery mode microcavity and nonlinear polarization rotation technology according to the present invention. As shown in fig. 2, laser emitted by the semiconductor single-mode laser is injected into the gain fiber for pumping through the polarization-dependent integrated optical device, and then sequentially passes through the polarization controller 1, the single-mode fiber with a certain length, the polarization controller 2, and the coupling system of the tapered fiber and the whispering-gallery mode microcavity, and finally is connected with the Signal port of the polarization-dependent integrated optical device, wherein a part of light is used for laser output of the Tap port, and the rest of light continuously circulates in the loop.
Referring to fig. 2, the main device parameters are selected as follows: the output light wavelength of the semiconductor single-mode laser is 980nm, and the light power is 59.52mW; the Common port of the polarization-dependent integrated optical device is a Corning HI-1060 optical fiber with a length of 7cm and a chromatic dispersion of-10 p s2 Km, the Signal port is a common single-mode optical fiber, the tail fiber length is 8cm, and the dispersion is-23 ps 2 Km, 10% light output at Tap port; the gain fiber is erbium-doped fiber with length of 0.8m, type of Liekki Er80-8/125, and dispersion of-20 ps 2 (ii) km; the length of the common single-mode optical fiber is 7m; the length of the conical optical fiber taper zone part is 3cm, the whispering gallery mode microcavity is a microsphere cavity, the diameter is 330 mu m, and the Q value is as high as 10 7 Magnitude. The total length of the resonant cavity is about 9.06m; the polarization controller is an embedded polarization controller directly inserted into the single-mode fiber; different optical fibers are directly welded.
The experimental results are shown in fig. 3 and 4, and it can be seen that the system generates a narrow linewidth laser with a central wavelength of 1600.4263nm and a 3dB linewidth of 0.0147nm, since this is the test result at the highest resolution of 0.02nm of the spectrometer, the actual linewidth is narrower than 0.0147 nm; the Q-switched pulses are spaced at 180 mus intervals, i.e. a repetition rate of 5.56kHz.
The specific working process is as follows:
initially, laser output by the tunable single-mode semiconductor laser is injected into the gain optical fiber, pulse laser is formed after a nonlinear polarization rotation effect system formed in the optical fiber through a polarization controller and a polarization-related isolator in the system, light meeting the resonant wavelength of the microcavity enters the microcavity to resonate at a coupling system formed by the whispering gallery mode microcavity and the tapered optical fiber, so that the mode selection effect is achieved, the polarization controller is properly adjusted, and the narrow-linewidth single-frequency Q-switching output can be obtained. The whole system does not need to use an optical filter, and the central wavelength of the Q-switched laser is related to the diameter of the whispering gallery mode microcavity.
The above are preferred embodiments of the present invention, and all changes made according to the technical scheme of the present invention that produce functional effects do not exceed the scope of the technical scheme of the present invention belong to the protection scope of the present invention.

Claims (6)

1. A single-frequency Q-switched laser comprises a single-mode semiconductor laser, a polarization-dependent integrated optical device, a first polarization controller, a second polarization controller, a single-mode optical fiber, a gain optical fiber, a tapered optical fiber and a whispering gallery mode microcavity; wherein the content of the first and second substances,
the single-mode semiconductor laser is used as a pumping source of the system and provides pumping for the gain optical fiber;
the single-mode semiconductor laser is connected to a pump port of the polarization-related integrated optical device, and a common port of the polarization-related integrated optical device is sequentially connected with the gain fiber, the first polarization controller, the single-mode fiber, the second polarization controller and the tapered fiber and then connected to a signal port of the polarization-related integrated optical device to form a loop; the wavelength division multiplexer is used for combining the pump light and the laser in the cavity into one beam; the coupler divides light into two beams according to proportion, one beam is used for light path circulation, the other part of light is output by a tap port of the polarization correlation type integrated optical device, and the polarization correlation type isolator is used as a polarizer and an analyzer at the same time;
the tapered optical fiber is used for coupling with the whispering gallery mode microcavity, and light is subjected to near-field coupling in the form of evanescent waves when passing through a tapered area of the tapered optical fiber;
the first polarization controller converts linearly polarized light caused by a polarization-dependent isolator in the polarization-dependent integrated optical device into elliptically polarized light, and the second polarization controller continues to adjust the polarization distribution of the light;
laser output by the single-mode semiconductor laser is injected into the gain optical fiber, pulse laser is formed after a nonlinear polarization rotation effect system formed in the optical fiber through a polarization controller and a polarization-related isolator in the system, and light with the resonant wavelength of the microcavity enters the microcavity to resonate at a coupling system formed by the whispering gallery mode microcavity and the conical optical fiber, so that the mode selection effect is achieved.
2. A single-tone Q-switched laser as claimed in claim 1, wherein the polarization controller is embodied as an embedded polarization controller.
3. The single-frequency Q-switched laser according to claim 1, wherein said gain fiber is a rare-earth ion doped fiber.
4. A single-frequency-tuned Q laser according to claim 1, wherein said whispering gallery mode microcavity is in the shape of a microdisk cavity or a microsphere cavity or a microlabel cavity.
5. A single-tone Q-switched laser as claimed in claim 1, wherein said tapered fiber is drawn from a single-mode fiber, the two tapered regions being connected before.
6. The single-tone Q-switched laser as claimed in claim 1, wherein said single-mode fiber is G.652 standard single-mode fiber.
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