CN113097356B - On-chip light source, preparation method of on-chip light source and optoelectronic device - Google Patents
On-chip light source, preparation method of on-chip light source and optoelectronic device Download PDFInfo
- Publication number
- CN113097356B CN113097356B CN202110259593.3A CN202110259593A CN113097356B CN 113097356 B CN113097356 B CN 113097356B CN 202110259593 A CN202110259593 A CN 202110259593A CN 113097356 B CN113097356 B CN 113097356B
- Authority
- CN
- China
- Prior art keywords
- layer
- dimensional material
- dimensional
- light source
- optical array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 15
- 238000002360 preparation method Methods 0.000 title abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 170
- 230000003287 optical effect Effects 0.000 claims abstract description 115
- 238000000034 method Methods 0.000 claims abstract description 32
- 230000001808 coupling effect Effects 0.000 claims abstract description 21
- 239000010410 layer Substances 0.000 claims description 457
- 229910052751 metal Inorganic materials 0.000 claims description 49
- 239000002184 metal Substances 0.000 claims description 49
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 35
- 229910052710 silicon Inorganic materials 0.000 claims description 33
- 239000010703 silicon Substances 0.000 claims description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 32
- 229910052755 nonmetal Inorganic materials 0.000 claims description 29
- 239000002356 single layer Substances 0.000 claims description 29
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 28
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 28
- 238000002955 isolation Methods 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 25
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 20
- 239000000377 silicon dioxide Substances 0.000 claims description 20
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 20
- 239000010931 gold Substances 0.000 claims description 18
- 235000012239 silicon dioxide Nutrition 0.000 claims description 18
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 17
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 13
- 229910052737 gold Inorganic materials 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 239000000956 alloy Substances 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 11
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 239000004332 silver Substances 0.000 claims description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 9
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 9
- 239000007769 metal material Substances 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 8
- 229910021389 graphene Inorganic materials 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 229910052732 germanium Inorganic materials 0.000 claims description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 239000004038 photonic crystal Substances 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 5
- 238000002207 thermal evaporation Methods 0.000 claims description 5
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 4
- 230000000737 periodic effect Effects 0.000 claims description 3
- 239000002086 nanomaterial Substances 0.000 claims description 2
- 230000004044 response Effects 0.000 abstract description 19
- 230000010354 integration Effects 0.000 abstract description 14
- 230000005679 Peltier effect Effects 0.000 abstract description 12
- 230000008569 process Effects 0.000 abstract description 9
- 230000006872 improvement Effects 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 21
- 230000008878 coupling Effects 0.000 description 8
- 238000010168 coupling process Methods 0.000 description 8
- 238000005859 coupling reaction Methods 0.000 description 8
- 230000005284 excitation Effects 0.000 description 8
- 230000000295 complement effect Effects 0.000 description 7
- -1 Transition Metal Sulfides Chemical class 0.000 description 6
- 239000006185 dispersion Substances 0.000 description 6
- 238000006862 quantum yield reaction Methods 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 229910052723 transition metal Inorganic materials 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 238000005424 photoluminescence Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 239000002120 nanofilm Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004422 calculation algorithm Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Led Devices (AREA)
Abstract
The invention provides an on-chip light source, a preparation method of the on-chip light source and an optoelectronic device. Wherein, when the resonant peak of the photon mode of the optical array layer is equal to the wavelength of the exciton peak of the two-dimensional material layer, the luminous intensity of the two-dimensional material layer is enhanced. In addition, the surface plasmon polariton of the hyperbolic metamaterial layer can generate strong coupling effect with the two-dimensional material layer, and the Peltier effect is further enhanced. The invention utilizes the hyperbolic metamaterial to enhance the Peltier effect of the two-dimensional material, not only can realize the remarkable improvement of the luminous intensity of the on-chip light source, but also can realize high luminous efficiency and fast response speed, and has small size, compact structure, easy high-density integration and good CMOS integration process compatibility.
Description
Technical Field
The invention relates to the technical field of manufacturing of optoelectronic devices and semiconductors, in particular to an on-chip light source, a preparation method of the on-chip light source and an optoelectronic device.
Background
Under the push of the next generation of supercomputers and the big data era, silicon-based photoelectrons become a leading technology for solving the explosively increased mass data transmission requirement in an optical communication system by virtue of small size, low power consumption, ultra-large bandwidth and ultra-fast response speed.
Currently, silicon-based optoelectronics will enter the field of optical communication links on a smaller scale, i.e. optical chips to optical chips or inside optical chips. However, the indirect bandgap of silicon with an indirect bandgap results in low radiation efficiency and is not suitable for making monolithic light sources. In fact, light sources typically require optical gain materials with direct band gaps. In addition, there have also been attempts to heterointegrate III-V materials on silicon to produce light, but such light sources still present several obstacles, including lattice mismatch, thermal expansion, and degradation of optical/electrical performance due to defects in the manufacturing process. Therefore, the light-integration luminescent device in the prior art has low luminous efficiency, slow response speed and weak luminous intensity, and is not easy to integrate, which becomes a problem to be solved urgently.
Disclosure of Invention
The invention provides an on-chip light source, a preparation method of the on-chip light source and a photoelectronic device, which are used for solving the defects of low luminous efficiency, low response speed and weak luminous intensity of an optical integration luminous device in the prior art.
The present invention provides an on-chip light source comprising:
the optical waveguide substrate comprises a substrate, an insulating layer, an optical array layer, an isolating layer, a two-dimensional material layer, a dielectric layer and a hyperbolic metamaterial layer;
the insulating layer is arranged on the upper surface of the substrate and used for isolating the substrate from the optical array layer;
the optical array layer is an optical nano structure which is arranged in a one-dimensional or two-dimensional periodic manner and is arranged on the upper surface of the insulating layer;
the isolation layer is arranged on the upper surface of the optical array layer and used for isolating the optical array layer from the two-dimensional material layer;
the two-dimensional material layer is arranged on the upper surface of the isolation layer and used for generating strong coupling effect with the optical array layer;
the dielectric layer is arranged on the upper surface of the two-dimensional material layer and used for isolating the two-dimensional material layer from the hyperbolic metamaterial layer;
the hyperbolic metamaterial layer is arranged on the upper surface of the dielectric layer and used for generating a strong coupling effect with the two-dimensional material layer.
According to the on-chip light source provided by the invention, the hyperbolic metamaterial layer comprises a plurality of metal layers and a plurality of nonmetal layers, and the metal layers and the nonmetal layers are alternately stacked;
the metal layer is made of any one of gold, silver, copper, aluminum, graphene and alloy materials, and the non-metal layer is made of any one of silicon, silicon dioxide, aluminum oxide, germanium, silicon nitride and polymethyl methacrylate; the thickness interval of the metal layer is 5nm-50nm, and the thickness interval of the non-metal layer is 5nm-50 nm.
According to the on-chip light source provided by the invention, the optical array layer is any one of a strip-shaped grating structure, a photonic crystal structure, a cylindrical grating structure and a polyhedral grating structure which are periodically arranged in a two-dimensional manner, wherein the strip-shaped grating structure is periodically arranged in a one-dimensional manner;
the optical array layer is made of any one semiconductor material of silicon, silicon nitride and lithium niobate, or any one material of gold, silver, copper, aluminum and alloy of different metal materials.
According to the on-chip light source provided by the invention, the dielectric layer is made of any one of polymethyl methacrylate, magnesium fluoride and silicon nitride, and the thickness interval of the dielectric layer is 50nm-100 nm.
According to the on-chip light source provided by the invention, the two-dimensional material layer is a thin film structure consisting of a single layer of two-dimensional semiconductor material or is formed by Van der Waals heterojunction formed by stacking a plurality of different two-dimensional materials.
According to the on-chip light source provided by the invention, the substrate is made of silicon, the insulating layer is made of silicon dioxide, and the isolating layer is made of aluminum oxide or polymethyl methacrylate.
The invention also provides a preparation method of the on-chip light source, which comprises the following steps:
preparing the insulating layer on the upper surface of the substrate, preparing the optical array layer on the upper surface of the insulating layer, and preparing the isolating layer on the upper surface of the optical array layer;
transferring the two-dimensional material layer prepared in advance to the upper surface of the isolation layer;
preparing a dielectric layer on the upper surface of the two-dimensional material layer by adopting a thermal evaporation method;
and transferring the pre-prepared hyperbolic metamaterial layer to the upper surface of the dielectric layer.
According to the preparation method of the on-chip light source provided by the invention, the step of transferring the two-dimensional material layer prepared in advance to the upper surface of the isolation layer comprises the following steps:
growing a single-layer two-dimensional material by adopting a chemical vapor deposition method, or stacking different single-layer two-dimensional materials together to obtain a two-dimensional material layer;
mechanically transferring the two-dimensional material layer to an upper surface of the release layer.
According to the preparation method of the on-chip light source provided by the invention, the step of transferring the pre-prepared hyperbolic metamaterial layer to the upper surface of the dielectric layer comprises the following steps:
and forming the hyperbolic metamaterial layer by adopting a micro-nano processing technology, and mechanically transferring the hyperbolic metamaterial layer to the upper surface of the dielectric layer.
The present invention also provides an optoelectronic device comprising: an on-chip light source as described above.
The invention provides an on-chip light source, a preparation method of the on-chip light source and an optoelectronic device. Wherein, when the resonant peak of the photon mode of the optical array layer is equal to the wavelength of the exciton peak of the two-dimensional material layer, the luminous intensity of the two-dimensional material layer is enhanced. In addition, the surface plasmon polariton of the hyperbolic metamaterial layer can generate strong coupling effect with the two-dimensional material layer, and the Peltier effect is further enhanced. The invention utilizes the hyperbolic metamaterial to enhance the Peltier effect of the two-dimensional material, not only can realize the remarkable improvement of the luminous intensity of the on-chip light source, but also can realize high luminous efficiency and fast response speed, and has small size, compact structure, easy high-density integration and good CMOS integration process compatibility.
Drawings
In order to more clearly illustrate the technical solutions of the present invention or the prior art, the drawings needed for the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
FIG. 1 is a schematic diagram of an on-chip light source according to the present invention;
FIG. 2 is a schematic diagram of a structure of another on-chip light source provided by the present invention;
FIG. 3 shows a 10-pair Au/SiO-based substrate provided by the present invention2The hyperbolic dispersion spectrum of the hyperbolic metamaterial (λ ═ 615 nm);
FIG. 4 is a schematic diagram of photoluminescence intensity spectrum of a mixed structure based on gold gratings, single-layer WS2 and Au/SiO2 hyperbolic metamaterials arranged in one-dimensional periodicity, provided by the invention;
FIG. 5 is a schematic flow chart of a method for fabricating an on-chip light source according to the present invention;
reference numerals:
101: a substrate; 102: an insulating layer; 103: an optical array layer;
104: an isolation layer; 105: a two-dimensional material layer; 106: a dielectric layer;
107: hyperbolic metamaterial layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Currently, silicon-based optoelectronics will enter the field of optical communication links on a smaller scale, i.e. optical chips to optical chips or inside optical chips. However, the indirect bandgap of silicon with an indirect bandgap results in low radiation efficiency and is not suitable for making monolithic light sources. In fact, light sources typically require optical gain materials with direct band gaps. In addition, there have also been attempts to heterointegrate III-V materials on silicon to produce light, but such light sources still present several obstacles, including lattice mismatch, thermal expansion, and degradation of optical/electrical performance due to defects in the manufacturing process. Therefore, the light-integration luminescent device in the prior art has low luminous efficiency, slow response speed and weak luminous intensity, and is not easy to integrate, which becomes a problem to be solved urgently.
Accordingly, the present invention provides an on-chip light source. Fig. 1 is a schematic structural diagram of an on-chip light source provided by the present invention, and as shown in fig. 1, the on-chip light source includes a substrate 101, an insulating layer 102, an optical array layer 103, an isolation layer 104, a two-dimensional material layer 105, a dielectric layer 106, and a hyperbolic metamaterial layer 107;
the insulating layer 102 is disposed on the upper surface of the substrate 101 and is used for isolating the substrate 101 from the optical array layer 103; the optical array layer 103 is of a grating structure and is arranged on the upper surface of the insulating layer 102; the isolation layer 104 is arranged on the upper surface of the optical array layer 103 and used for isolating the optical array layer 103 from the two-dimensional material layer 105; the two-dimensional material layer 105 is disposed on the upper surface of the isolation layer 104 for generating a strong coupling effect with the optical array layer 103. The dielectric layer 106 is arranged on the upper surface of the two-dimensional material layer 105 and used for isolating the two-dimensional material layer 105 from the hyperbolic metamaterial layer 107; the hyperbolic metamaterial layer 107 is arranged on the upper surface of the dielectric layer 106 and used for generating a strong coupling effect with the two-dimensional material layer 105. The optical array layer 103 may be a one-dimensional periodically arranged strip-shaped grating structure, or a two-dimensional periodically arranged photonic crystal structure, or a cylindrical grating structure, or a polyhedral grating structure, which is not specifically limited in this embodiment of the present invention.
In addition, when the photon mode of the optical array layer 103, the excitons of the two-dimensional material layer 105 and the surface plasmons of the hyperbolic metamaterial layer 107 are strongly coupled, the peltier effect is significantly enhanced, so that the light emitting efficiency, the light emitting intensity and the response speed of the on-chip light source can be further improved. Meanwhile, in order to avoid charge transfer between the two-dimensional material layer 105 and the hyperbolic metamaterial layer 107, a dielectric layer 106 needs to be arranged between the two-dimensional material layer 105 and the hyperbolic metamaterial layer 107, so that the two-dimensional material layer 105 and the hyperbolic metamaterial layer 107 can be isolated. Where a doubly curved metamaterial is an artificially fabricated structure that can be formed by depositing alternating thin layers of conductors such as silver or graphene on a substrate, the doubly curved metamaterial can support the propagation of very narrow beams that can be generated by placing nanoparticles on its top surface and irradiating with a laser beam.
By adjusting the geometric parameters of the optical array layer 103 (e.g., adjusting the geometric structure of the optical array layer 103, the thickness of the optical array layer 103, the material of the optical array layer 103, etc.), the resonant peak of the photon mode of the optical array layer 103 is equal to the wavelength of the exciton peak of the two-dimensional material layer 105, and at this time, the photon mode of the optical array layer 103 and the exciton of the two-dimensional material layer 105 form a strong coupling effect, so that the quantum yield and the luminous intensity of the on-chip light source in the visible and infrared bands are enhanced. The spacer layer may be formed of alumina or polymethylmethacrylate to prevent charge transfer between the optical array layer 103 and the two-dimensional material layer 105. The optical array layer 103 in fig. 1 is a strip grating structure with one-dimensional periodic arrangement, and in an actual manufacturing process, a grating may be formed by adopting a structure with a cross section of different shapes, as long as the manufactured hybrid structure forms strong coupling. By adjusting the surface plasmons of the hyperbolic metamaterial layer 107 (for example, adjusting the thickness and material of the hyperbolic metamaterial layer 107), the hyperbolic metamaterial layer 107 and the two-dimensional material layer 105 generate a strong coupling effect, so that the peltier effect is further enhanced, and the further enhancement of the light emitting efficiency and the light emitting intensity of the two-dimensional material layer 105 and the further improvement of the response speed are realized.
In the embodiment of the invention, the two-dimensional material layer 105, the optical array layer 103 and the hyperbolic metamaterial layer 107 form a mixed structure, and the optical array layer 103 has the advantages of integration, high quality factor, mode design, miniaturization, practicability and the like, so that the local light density around the two-dimensional material layer 105 can be obviously adjusted, and the light emitting characteristic is greatly improved; meanwhile, the hyperbolic metamaterial layer 107 has special electromagnetic characteristics for manipulating a near field by using surface plasmon polariton, so that the integration of the two-dimensional material layer 105 and the hyperbolic metamaterial layer 107 has the following advantages: firstly, the internal metal layer with negative refractive index is matched with the surrounding medium, so that light is not reflected on the surface after being vertically incident; and secondly, the materials, geometric parameters, arrangement modes and the like of the metal layer and the dielectric layer in the hyperbolic metamaterial layer are changed, the excitation intensity and the direction of surface plasmon polaritons can be adjusted, and therefore the unique hyperbolic dispersion characteristic is generated.
In addition, hyperbolic dispersion may result in high photon state density, and thus when there is strong coupling between the hyperbolic metamaterial layer 107 and the two-dimensional material layer 105, the light emitting efficiency and the light emitting intensity of the two-dimensional material layer 105 may be further improved, which is caused by the enhanced peltier effect. Meanwhile, the hyperbolic metamaterial layer 107 and the two-dimensional material layer 105 are small in structure size and have good compatibility of a CMOS (complementary metal oxide semiconductor) integration process, so that the size of the on-chip light source can be reduced, the manufacturing cost of the on-chip light source is reduced, and a miniaturized light-emitting device is obtained.
The two-dimensional material refers to a material in which electrons can move freely (plane motion) only on a two-dimensional nanoscale, such as a nano-film, a superlattice, and a quantum well, and has excellent physical properties such as force, heat, light, electricity, and the like. The single-layer Transition Metal Sulfides (TMDCs) are exemplified. The single-layer TMDCs has a direct band gap structure in a visible light range, has high luminous efficiency, and simultaneously has high binding energy and resonance strength. And the exciton peak position of the van der waals heterojunction formed by stacking different two-dimensional materials can be adjusted in the range from visible light to near infrared bands. In addition, due to the weak dielectric shielding effect of TMDCs, various quasi-particles such as excitons, bi-excitons, charged excitons, etc. can be generated inside thereof. It is worth mentioning that the surface of the TMDCs is naturally passivated without dangling bonds, so that the TMDCs are easy to integrate with a photon structure such as an optical array layer and a hyperbolic metamaterial, and also easy to construct a vertical heterojunction with other two-dimensional materials, and the problem of conventional lattice mismatch does not exist, so that the on-chip light-emitting device has extremely high compatibility with a silicon-based photoelectron platform and a CMOS (complementary metal oxide semiconductor) process. Most importantly, single layer TMDCs are considered to be the thinnest optical gain material capable of maintaining laser operation at low temperatures.
Silicon transistors are approaching physical limits in the prior art and cannot be further scaled down to satisfy moore's law, becoming a serious problem for all bulk semiconductor-based transistors. However, two-dimensional materials can help transistors achieve smaller dimensions because they are only one atom thick and are limited to "vertical" dimensions, have no defects, and have extremely high electron mobility. The single-layer Transition Metal Sulfides (TMDCs) are exemplified. The single-layer TMDCs is a direct band gap structure in a visible light range, has high luminous efficiency and large binding energy and resonance intensity, and the exciton peak position of the Van der Waals heterojunction formed by stacking different two-dimensional materials can be adjusted in a range from visible light to near infrared bands. In addition, the surface of the single-layer TMDCs is naturally passivated without dangling bonds, so that the single-layer TMDCs is easy to integrate with a photon structure such as an optical array layer and a hyperbolic metamaterial, and is also easy to construct a vertical heterojunction with other two-dimensional materials, and the problem of conventional lattice mismatch does not exist, so that the single-layer TMDCs have extremely high compatibility with silicon-based photoelectron platforms and CMOS (complementary metal oxide semiconductor) process integration. Therefore, the two-dimensional semiconductor material (such as transition metal sulfide) is applied to a silicon optoelectronic platform, so that the two-dimensional semiconductor material has the characteristics complementary to silicon, and the performance and other functions of the on-chip light-emitting device can be improved.
Therefore, in the on-chip light source provided by the embodiment of the invention, the insulating layer is formed on the substrate, the optical array layer is formed on the insulating layer, the isolating layer is formed on the optical array layer, the two-dimensional material layer is formed on the isolating layer, the dielectric layer is formed on the two-dimensional material layer, and the hyperbolic metamaterial layer is formed on the dielectric layer. Wherein, when the resonant peak of the photon mode of the optical array layer is equal to the wavelength of the exciton peak of the two-dimensional material layer, the luminous intensity of the two-dimensional material layer is enhanced. In addition, the surface plasmon polariton of the hyperbolic metamaterial layer can generate strong coupling effect with the two-dimensional material layer, and the Peltier effect is further enhanced. The invention utilizes the hyperbolic metamaterial to enhance the Peltier effect of the two-dimensional material, not only can realize the remarkable improvement of the luminous intensity of the on-chip light source, but also can realize high luminous efficiency and fast response speed, and has small size, compact structure, easy high-density integration and good CMOS integration process compatibility.
According to any of the above embodiments, the doubly curved metamaterial layer 107 includes a plurality of metal layers and a plurality of non-metal layers, and the metal layers and the non-metal layers are alternately stacked;
the metal layer is made of any one of gold, silver, copper, aluminum, graphene and alloy materials, and the non-metal layer is made of any one of silicon, silicon dioxide, aluminum oxide, germanium, silicon nitride and polymethyl methacrylate; the thickness interval of the metal layer is 5nm-50nm, and the thickness interval of the non-metal layer is 5nm-50 nm.
Specifically, the doubly curved metamaterial layer 107 includes a plurality of metal layers and a plurality of non-metal layers, formed by alternately stacking the metal layers and the non-metal layers.
As shown in fig. 2, the doubly curved metamaterial layer 107 is formed by alternately stacking a plurality of metal layers and a plurality of non-metal layers, for example, 10 Au layers (metal layers) and 10 SiO layers2The (non-metal layer) layers are alternately stacked, and in order to generate a strong coupling effect between the hyperbolic metamaterial layer 107 and the two-dimensional material layer 105 in an actual manufacturing process, the hyperbolic metamaterial layer can be formed by adopting structures in the shapes of different metal materials and different non-metal materials.
In order to illustrate the characteristics of high luminous intensity, large quantum yield, fast response speed, adjustable and controllable working wavelength and the like of the on-chip light-emitting device provided by the embodiment of the invention, the embodiment of the invention uses 10 pairs of Au/SiO2The layer is illustrated as an example of a light emitting device on a sheet formed by a hyperbolic metamaterial layer, as shown in fig. 3, curve a is a hyperbolic curve calculated by effective medium theory, and curve b and curve c are h respectivelym+hd40nm and hm+hd＝20nm(hm＝hd) And obtaining the constant frequency profile of the hyperbolic metamaterial by a transmission matrix method. Here, hmAnd hdRespectively corresponding to the thickness of the metal layer and the non-metal layer in the hyperbolic metamaterial layer.
FIG. 4 shows a gold grating and a single layer WS arranged periodically in one dimension when the pump light is incident vertically according to an embodiment of the present invention2And Au/SiO2Light of hybrid structure composed of hyperbolic metamaterialThe intensity spectrum of Photoluminescence (PL) as shown in FIG. 4, the on-chip light emitting device showed a strong PL effect at 610nm to 640nm, with a significant enhancement in the light emission intensity, and a superposition of a second PL peak at a wavelength range of 610nm to 625 nm.
The hyperbolic metamaterial layer 107 is formed by alternately stacking a plurality of metal layers and a plurality of non-metal layers, the number of the metal layers and the number of the non-metal layers are both 5-40, for example, the number of the metal layers in the hyperbolic metamaterial layer 107 is 10, and the number of the non-metal layers is 10. The metal layer is formed by gold, silver, copper, aluminum, graphene or alloy of different metal materials, the nonmetal layer is formed by silicon, silicon dioxide, aluminum oxide, germanium, silicon nitride or polymethyl methacrylate, the thickness of the metal layer is 5-50nm, and the thickness of the dielectric layer is 5-50 nm. Wherein, the excitation intensity and the direction of the surface plasmon can be changed by adjusting the layer thickness of the metal layer and the nonmetal layer, thereby leading to different hyperbolic dispersion curves.
Based on any of the above embodiments, the optical array layer 103 is any one of a one-dimensional periodically arranged strip-shaped grating structure, a two-dimensional periodically arranged photonic crystal structure, a two-dimensional periodically arranged cylindrical grating structure, and a two-dimensional periodically arranged polyhedral grating structure;
the optical array layer 103 is made of any one of semiconductor materials such as silicon, silicon nitride, and lithium niobate, or any one of gold, silver, copper, aluminum, and an alloy of different metal materials.
Specifically, the optical array layer 103 is any one of a one-dimensionally and periodically arranged strip-shaped grating structure, a two-dimensionally and periodically arranged photonic crystal structure, a two-dimensionally and periodically arranged cylindrical grating structure, and a two-dimensionally and periodically arranged polyhedral grating structure, and by adjusting geometric parameters of the optical array layer 103 (such as adjusting the geometric structure in the optical array layer 103, the thickness of the optical array layer 103, the material of the optical array layer 103, and the like), the resonant peak of the photonic mode of the optical array layer 103 is equal to the wavelength of the exciton peak of the two-dimensional material layer 105, and at this time, the photonic mode of the optical array layer 103 and the exciton of the two-dimensional material layer 105 form a strong coupling effect, so that the quantum yield and the luminous intensity of the on-chip light source in the visible light and infrared bands are enhanced.
The optical array layer 103 may be made of any semiconductor material of silicon, silicon nitride, and lithium niobate, or may be made of any material of gold, silver, copper, aluminum, and an alloy of different metal materials.
Based on any of the above embodiments, the material of the dielectric layer 106 is any one of polymethyl methacrylate, magnesium fluoride and silicon nitride, and the thickness of the dielectric layer 106 is between 50nm and 100 nm.
Specifically, in order to prevent charge transfer between the two-dimensional material layer 105 and the hyperbolic metamaterial layer 107 and influence a strong coupling effect between the two, a dielectric layer 106 needs to be arranged between the two to isolate the two-dimensional material layer 105 and the hyperbolic metamaterial layer 107, wherein the dielectric layer 106 may be formed by any one of polymethyl methacrylate, magnesium fluoride or silicon nitride, and a thickness interval of the dielectric layer 106 is 50nm to 100 nm.
According to any of the above embodiments, the two-dimensional material layer 105 is a thin-film structure composed of a single two-dimensional semiconductor material or formed of van der waals heterojunction formed by stacking a plurality of different two-dimensional materials.
Specifically, the two-dimensional material layer 105 is a thin-film structure composed of a single layer of a two-dimensional semiconductor material (e.g., a transition metal sulfide), or is formed of a van der waals heterojunction composed of a stack of a plurality of different two-dimensional materials. The two-dimensional material refers to a material in which electrons can move freely (plane movement) only on a two-dimensional nanoscale, such as a nano-film, a superlattice and a quantum well, and has excellent physical properties of force, heat, light, electricity and the like. The single-layer Transition Metal Sulfides (TMDCs) are exemplified. The single-layer TMDCs has a direct band gap structure in a visible light range, has high luminous efficiency, and simultaneously has high binding energy and resonance strength. And the exciton peak position of the van der waals heterojunction formed by stacking different two-dimensional materials can be adjusted in the range from visible light to near infrared bands. In addition, due to the weak dielectric shielding effect of TMDCs, various quasi-particles such as excitons, bi-excitons, charged excitons, etc. can be generated inside thereof. It is worth mentioning that the surface of the TMDCs is naturally passivated without dangling bonds, so that the TMDCs are easy to integrate with a photon structure such as an optical array layer and a hyperbolic metamaterial, and also easy to construct a vertical heterojunction with other two-dimensional materials, and the problem of conventional lattice mismatch does not exist, so that the on-chip light-emitting device has extremely high compatibility with a silicon-based photoelectron platform and a CMOS (complementary metal oxide semiconductor) process. Most importantly, single layer TMDCs are considered to be the thinnest optical gain material capable of maintaining laser operation at low temperatures. Therefore, the two-dimensional semiconductor material (such as transition metal sulfide) is applied to a silicon optoelectronic platform, so that the two-dimensional semiconductor material has the characteristics complementary to silicon, and the performance and other functions of the on-chip light-emitting device can be improved.
Based on any of the above embodiments, the substrate is made of silicon, the insulating layer is made of silicon dioxide, and the isolation layer is made of aluminum oxide or polymethyl methacrylate.
In particular, since a metal thin film or a semiconductor thin film is deposited on the insulating layer, the substrate can support the thin film on the insulating layer and improve characteristics of the thin film. The film grows on the substrate, the material property of the substrate and the shape of the surface of the substrate have great influence on the characteristic of the film, because the thickness of the film is generally between nanometer and micron, the surface of the substrate is required to have ultrahigh flatness; the combination of the thin film and the substrate is also a very important aspect, and if the two are not lattice matched, a long transition region is formed in the early stage of the thin film formation. Therefore, in order to match the material of the substrate with the thin film, the material of the substrate is silicon, and the material of the insulating layer is silicon dioxide in the embodiment of the invention.
In addition, in order to prevent charge transfer between the optical array layer and the two-dimensional material layer, an isolation layer is arranged between the optical array layer and the two-dimensional material layer, so that strong coupling between the optical array layer and the two-dimensional material layer after charge transfer is prevented, wherein the isolation layer is made of aluminum oxide or polymethyl methacrylate.
Based on any of the above embodiments, as shown in fig. 5, the present invention further provides a method for manufacturing an on-chip light source according to any of the above embodiments, including:
and 540, transferring the pre-prepared hyperbolic metamaterial layer to the upper surface of the dielectric layer.
Specifically, an insulating layer with a thickness of 500nm to 1000nm may be formed on a substrate, an optical array layer with a thickness of 100nm to 200nm may be formed on the insulating layer, an isolation layer with a thickness of 5nm to 20nm may be formed on the optical array layer, and then a pre-formed two-dimensional material layer may be transferred onto the isolation layer, and a dielectric layer with a thickness of 50nm to 100nm may be formed on the two-dimensional material layer.
It should be noted that, a metal film with a thickness of 100nm to 200nm may be deposited on the insulating layer by an electron beam evaporation method, or a semiconductor film with a thickness of 100nm to 200nm may be grown on the insulating layer; then, preparing a unit array which is periodically arranged on the metal film or the semiconductor film by adopting an electron beam lithography method to form an optical array layer; furthermore, an isolation layer with the thickness of 5nm-20nm is plated on the surface of the optical array layer by adopting an atomic deposition method.
After the preformed two-dimensional material layer is transferred to the upper surface of the isolation layer, a dielectric layer with the thickness of 50nm-100nm can be formed on the two-dimensional material layer by adopting a thermal evaporation method, and then the prepared hyperbolic metamaterial layer is transferred to the upper surface of the dielectric layer, so that the optical array layer, the two-dimensional material layer and the hyperbolic metamaterial layer can be integrated, the luminous intensity and the luminous efficiency can be improved, the size of a light source on a chip can be effectively reduced, and the manufacturing cost is saved.
According to the embodiment of the invention, the optical array layer, the two-dimensional material layer and the hyperbolic metamaterial layer are vertically stacked according to a certain sequence to form a novel mixed structure, so that an on-chip light source with excellent performance can be formed. The method comprises the steps of designing a proper optical array and hyperbolic metamaterial by utilizing high-precision numerical simulation, and measuring and researching the characteristics of the light-emitting intensity, the light-emitting efficiency, the working wavelength, the response speed and the like of the on-chip light source based on the mixed structure at room temperature by using a micro-nano processing technology, a light integration technology and a spectrum detection technology.
Based on any embodiment, the step of transferring the pre-prepared two-dimensional material layer to the upper surface of the isolation layer comprises the following steps:
growing a single-layer two-dimensional material by adopting a chemical vapor deposition method, or stacking different single-layer two-dimensional material molecules together to obtain a two-dimensional material layer;
the two-dimensional material layer is mechanically transferred to the upper surface of the spacer layer.
Specifically, in the embodiment of the invention, a single-layer two-dimensional material can be grown by a chemical vapor deposition method, or different single-layer two-dimensional materials are stacked together by molecules, so that a two-dimensional material layer is prepared in advance, and then the prepared two-dimensional material layer is mechanically transferred to the upper surface of the isolation layer, so that the two-dimensional material layer is integrated with the substrate, the insulation layer, the optical array layer and the isolation layer, and the two-dimensional material layer and the optical array layer can generate a strong coupling effect, thereby enhancing the light emitting efficiency and the light emitting intensity.
Based on any one of the above embodiments, transferring a pre-prepared hyperbolic metamaterial layer to the upper surface of a dielectric layer includes:
and forming a hyperbolic metamaterial layer by adopting a micro-nano processing technology, and mechanically transferring the hyperbolic metamaterial layer to the upper surface of the dielectric layer.
Specifically, a micro-nano machining process is adopted to form a hyperbolic metamaterial layer, the hyperbolic metamaterial layer comprises a plurality of metal layers and a plurality of dielectric layers, the metal layers and the dielectric layers are alternately stacked to form the hyperbolic metamaterial layer, and the number of the metal layers and the number of the dielectric layers in the hyperbolic metamaterial layer are 5-40. Wherein the thickness of the metal layer is 5nm-50nm, and the thickness of the non-metal layer is 5nm-50 nm.
Specifically, when the substrate is formed of silicon, the insulating layer is formed of silicon dioxide, the isolation layer is formed of aluminum oxide or polymethylmethacrylate, and the dielectric layer is formed of polymethylmethacrylate, magnesium fluoride, or silicon nitride, the on-chip light source may be formed using a method including:
firstly, depositing a metal film with the thickness of 100nm-200nm on a silicon dioxide insulating layer by adopting an electron beam evaporation method, or growing a semiconductor film with the thickness of 100nm-200nm on the silicon dioxide insulating layer; then, preparing a unit array which is periodically arranged on the metal film or the semiconductor film by adopting an electron beam lithography method to form an optical array;
secondly, an isolating layer of alumina or polymethyl methacrylate film with the thickness of 5nm-20nm is plated on the surface of the optical array by adopting an atomic deposition method.
Thirdly, growing a single-layer two-dimensional material by adopting a chemical vapor deposition method, or stacking different single-layer two-dimensional material molecules together to form a two-dimensional material layer, and mechanically transferring the two-dimensional material layer to an isolating layer of aluminum oxide or a polymethyl methacrylate film;
fourthly, preparing a dielectric layer of polymethyl methacrylate, magnesium fluoride or silicon nitride film on the two-dimensional material layer by adopting a thermal evaporation method;
and finally, forming the hyperbolic metamaterial layer by adopting a micro-nano processing technology. The hyperbolic metamaterial layer is formed by alternately stacking a plurality of metal layers and a plurality of dielectric layers, and the number of the layers of the metal layers and the dielectric layers is 5-40. The metal layer is made of gold, silver, copper, aluminum, graphene or alloy of different metal materials, the dielectric layer is made of silicon, silicon dioxide, aluminum oxide, germanium, silicon nitride or polymethyl methacrylate, the thickness of the metal layer is 5-50nm, and the thickness of the dielectric layer is 5-50 nm. And finally, manufacturing the on-chip light source based on the two-dimensional material and hyperbolic metamaterial mixed structure.
In the experiment, a proper pump light wavelength needs to be selected to improve the luminous intensity, luminous efficiency and response speed under the action of strong coupling. As shown in fig. 1, when the pump laser pumps the mixed structure in a direction perpendicular to the surface of the hyperbolic metamaterial, the fluorescence generated by the pump laser is also perpendicular to the upper surface of the hyperbolic metamaterial, so that the realized on-chip light source is mainly a vertically emitting on-chip light source. The working range of the on-chip light source is from visible light to near infrared, and the on-chip light source has the characteristic of low excitation threshold.
In the process of manufacturing the on-chip light source provided by the embodiment of the invention, the optical array layer, the two-dimensional material layer and the hyperbolic metamaterial layer are vertically stacked in a certain sequence to form a mixed structure, so that the strong coupling interaction among excitons of the two-dimensional material layer, the photon mode of the optical array layer and the surface plasmons of the hyperbolic metamaterial layer is favorably realized, the quantum yield and the luminous intensity of the mixed structure in visible light and near infrared bands are enhanced, and the ultra-fast response speed can be realized.
By designing a proper optical array structure and hyperbolic metamaterial, the two-dimensional material layer is used as a gain material, the two-dimensional material layer, the hyperbolic metamaterial and the gain material are integrated to form a mixed structure, the coupling effect strength of the mixed structure is enhanced, and therefore the luminous intensity, the luminous efficiency and the response speed are greatly improved, and the working wavelength can be regulated. Due to the sub-wavelength dimensions, the geometry, composition materials of the optical array determine the photon mode. In addition, parameters such as the material, the geometric parameters and the arrangement mode of the metal layer and the non-metal layer in the hyperbolic metamaterial can change the excitation intensity and the direction of surface plasmon polaritons, so that the hyperbolic dispersion characteristic and the high photon density of states are caused. Here, strong coupling interaction may occur among excitons of the two-dimensional material layer, photon modes of the optical array layer, and surface plasmons of the hyperbolic metamaterial layer. The design of the optical array structure and the geometric structure of the hyperbolic metamaterial also needs to consider experimental conditions, such as the wavelength of a photon mode generated after the excitation of selected pump light and the resonance peak of surface plasmon polariton, which are exactly corresponding to the designed exciton peak of the two-dimensional material layer. The designs can adopt a finite element algorithm or a time domain finite difference method to carry out numerical calculation simulation to obtain appropriate parameters.
Based on the on-chip light source structure in fig. 1, the substrate is formed by silicon, the insulating layer is formed by silicon dioxide, the isolating layer is formed by aluminum oxide or polymethyl methacrylate, and when the dielectric layer is formed by polymethyl methacrylate, magnesium fluoride or silicon nitride, the structure of the on-chip light source sequentially comprises from bottom to top: a silicon substrate; the insulating layer silicon dioxide film is positioned above the silicon substrate, and the thickness of the silicon dioxide film is 500nm-1000 nm; the optical array layer is formed by a metal and semiconductor array which is arranged periodically in one dimension or two dimensions, is positioned above the insulating layer and has the thickness of 100nm-200 nm. The optical array layer generates a photon mode and provides a generation condition for strong coupling action of excitons and the photon mode; the isolating layer is an aluminum oxide or polymethyl methacrylate film and is positioned on the optical array layer, and the thickness of the aluminum oxide or polymethyl methacrylate film is 5nm-20 nm. The isolation layer is used for preventing charge transfer between the optical array layer and the two-dimensional material layer; the two-dimensional material layer is formed by growing a single-layer two-dimensional material by adopting a chemical vapor deposition method, or different single-layer two-dimensional material molecules are stacked together and positioned between the isolating layer aluminum oxide or polymethyl methacrylate film and the hyperbolic metamaterial layer, and the function of an on-chip light source is realized by strong coupling with the optical array layer and the hyperbolic metamaterial layer; the dielectric layer is a polymethyl methacrylate, magnesium fluoride or silicon nitride film and is positioned on the two-dimensional material layer, and the thickness of the polymethyl methacrylate, the magnesium fluoride or the silicon nitride film is 50nm-100 nm; the hyperbolic metamaterial layer is formed by alternately stacking a plurality of metal layers and a plurality of dielectric layers and is positioned on the dielectric layers. The number of layers of the metal layer and the dielectric layer is 5-40. The metal layer is made of gold, silver, copper, aluminum, graphene or alloy of different metal materials, the dielectric layer is made of silicon, silicon dioxide, aluminum oxide, germanium, silicon nitride or polymethyl methacrylate, the thickness of the metal layer is 5-50nm, and the thickness of the dielectric layer is 5-50 nm. The hyperbolic metamaterial interacts with the two-dimensional material layer to generate a surface plasmon mode, and generation conditions of strong coupling action of excitons and the surface plasmon mode are provided.
Based on any of the above embodiments, the present invention also provides an optoelectronic device, comprising: an on-chip light source as claimed in any preceding embodiment.
Specifically, the on-chip light source is a mixed structure formed by integrating the two-dimensional material layer, the optical array and the hyperbolic metamaterial, so that the optoelectronic device comprising the on-chip light source can greatly improve the luminous intensity, luminous efficiency and response speed of the device at room temperature and regulate and control the working wavelength, the strong coupling effect among the optical array, the two-dimensional material and the hyperbolic metamaterial is realized, the regulation and control of the Peltier effect are realized, and the defects of the prior art are overcome. The method has great significance for the realization, integration and multi-functionalization of the on-chip light source with excellent performance, and has great significance for the development of on-chip optical interconnection, next generation of supercomputers and cloud networks.
The photoelectronic device provided by the embodiment of the invention realizes strong coupling effect, greatly enhances the Peltier effect, and obviously improves the quantum yield and the luminous intensity. The optical array, the single-layer two-dimensional material and the hyperbolic metamaterial have ultra-fast response rates, and the ultra-fast response speed of a light source is guaranteed. In addition, the working wavelength of the polarized excimer light source can be adjusted in visible light and near infrared, and the polarized excimer light source has the characteristic of low excitation threshold. The surface of the two-dimensional material is naturally passivated without dangling bonds, is easy to integrate with a photon structure such as an optical array layer and a hyperbolic metamaterial, and is also easy to construct a vertical heterojunction with other two-dimensional materials, and the problem of conventional lattice mismatch does not exist, so that the on-chip light-emitting device has extremely high compatibility with silicon-based photoelectron platforms and CMOS (complementary metal oxide semiconductor) process integration.
In summary, the optoelectronic device provided by the embodiment of the invention uses the two-dimensional material layer, the optical array and the hyperbolic metamaterial to form a mixed structure integrated to be used as an on-chip light source, so that the luminous intensity, luminous efficiency and response speed of the device can be greatly improved and the working wavelength can be regulated and controlled at room temperature. Through designing suitable optical array structure and hyperbolic metamaterial, use the two-dimensional material layer as the gain material, integrate the three and constitute mixed structure, strengthen its coupling effect intensity to greatly strengthened the peltier effect, further promoted the performance of light source on the piece. Due to the sub-wavelength dimensions, the geometry, composition materials of the optical array determine the photon mode. In addition, the parameters such as the materials, the geometrical parameters and the arrangement mode of the metal layer and the dielectric layer in the hyperbolic metamaterial can change the excitation intensity and the direction of surface plasmon polaritons, so that the hyperbolic dispersion characteristic and the high photon density are caused. Here, strong coupling interaction may occur among excitons of the two-dimensional material layer, photon modes of the optical array layer, and surface plasmons of the hyperbolic metamaterial layer. The design of the optical array structure and the geometric structure of the hyperbolic metamaterial also needs to consider experimental conditions, such as the wavelength of a photon mode generated after the excitation of selected pump light and the resonance peak of surface plasmon polariton, which are exactly corresponding to the designed exciton peak of the two-dimensional material layer. The design scheme can greatly enhance the fluorescence emission intensity and the quantum yield, improve the quick response speed of the device, realize the adjustability of the emission wavelength and has great significance for the development of on-chip optical interconnection, next generation of supercomputers and cloud networks.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (9)
1. An on-chip light source, comprising:
the optical waveguide substrate comprises a substrate, an insulating layer, an optical array layer, an isolating layer, a two-dimensional material layer, a dielectric layer and a hyperbolic metamaterial layer;
the insulating layer is arranged on the upper surface of the substrate and used for isolating the substrate from the optical array layer;
the optical array layer is an optical nano structure which is arranged in a one-dimensional or two-dimensional periodic manner and is arranged on the upper surface of the insulating layer;
the isolation layer is arranged on the upper surface of the optical array layer and used for isolating the optical array layer from the two-dimensional material layer;
the two-dimensional material layer is arranged on the upper surface of the isolation layer and used for generating strong coupling effect with the optical array layer;
the dielectric layer is arranged on the upper surface of the two-dimensional material layer and used for isolating the two-dimensional material layer from the hyperbolic metamaterial layer;
the hyperbolic metamaterial layer is arranged on the upper surface of the dielectric layer and used for generating a strong coupling effect with the two-dimensional material layer;
the hyperbolic metamaterial layer comprises a plurality of metal layers and a plurality of nonmetal layers, and the metal layers and the nonmetal layers are stacked alternately;
the metal layer is made of any one of gold, copper, aluminum, graphene and alloy materials, and the non-metal layer is made of any one of silicon dioxide, aluminum oxide, germanium, silicon nitride and polymethyl methacrylate; the thickness interval of the metal layer is 5nm-50nm, and the thickness interval of the non-metal layer is 5nm-50 nm.
2. The on-chip light source of claim 1, wherein the optical array layer is any one of a one-dimensional periodically arranged stripe-shaped grating structure, a two-dimensional periodically arranged photonic crystal structure, a two-dimensional periodically arranged cylindrical grating structure, and a two-dimensional periodically arranged polyhedral grating structure;
the optical array layer is made of any one semiconductor material of silicon, silicon nitride and lithium niobate, or any one material of gold, silver, copper, aluminum and alloy of different metal materials.
3. The on-chip light source of claim 1, wherein the dielectric layer is made of any one of polymethyl methacrylate, magnesium fluoride and silicon nitride, and the thickness of the dielectric layer ranges from 50nm to 100 nm.
4. The on-chip light source of claim 1, wherein the two-dimensional material layer is a thin film structure composed of a single layer of two-dimensional semiconductor material or is formed of van der Waals heterojunction formed by stacking a plurality of different two-dimensional materials.
5. The on-chip light source as claimed in claim 1, wherein the substrate is made of silicon, the insulating layer is made of silicon dioxide, and the isolation layer is made of aluminum oxide or polymethyl methacrylate.
6. A method of manufacturing an on-chip light source as claimed in any one of claims 1 to 5, comprising:
preparing the insulating layer on the upper surface of the substrate, preparing the optical array layer on the upper surface of the insulating layer, and preparing the isolating layer on the upper surface of the optical array layer;
transferring the two-dimensional material layer prepared in advance to the upper surface of the isolation layer;
preparing a dielectric layer on the upper surface of the two-dimensional material layer by adopting a thermal evaporation method;
transferring a pre-prepared hyperbolic metamaterial layer to the upper surface of the dielectric layer;
the hyperbolic metamaterial layer comprises a plurality of metal layers and a plurality of nonmetal layers, and the metal layers and the nonmetal layers are stacked alternately;
the metal layer is made of any one of gold, copper, aluminum, graphene and alloy materials, and the non-metal layer is made of any one of silicon dioxide, aluminum oxide, germanium, silicon nitride and polymethyl methacrylate; the thickness interval of the metal layer is 5nm-50nm, and the thickness interval of the non-metal layer is 5nm-50 nm.
7. The method of manufacturing an on-chip light source according to claim 6, wherein the transferring the two-dimensional material layer prepared in advance to the upper surface of the isolation layer comprises:
growing a single-layer two-dimensional material by adopting a chemical vapor deposition method, or stacking different single-layer two-dimensional materials together to obtain a two-dimensional material layer;
mechanically transferring the two-dimensional material layer to an upper surface of the release layer.
8. The method of claim 6, wherein the step of transferring the pre-fabricated hyperbolic metamaterial layer to the upper surface of the dielectric layer comprises:
and forming the hyperbolic metamaterial layer by adopting a micro-nano processing technology, and mechanically transferring the hyperbolic metamaterial layer to the upper surface of the dielectric layer.
9. An optoelectronic device, comprising: an on-chip light source as claimed in any one of claims 1 to 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110259593.3A CN113097356B (en) | 2021-03-10 | 2021-03-10 | On-chip light source, preparation method of on-chip light source and optoelectronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110259593.3A CN113097356B (en) | 2021-03-10 | 2021-03-10 | On-chip light source, preparation method of on-chip light source and optoelectronic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113097356A CN113097356A (en) | 2021-07-09 |
| CN113097356B true CN113097356B (en) | 2022-02-25 |
Family
ID=76666791
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110259593.3A Active CN113097356B (en) | 2021-03-10 | 2021-03-10 | On-chip light source, preparation method of on-chip light source and optoelectronic device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113097356B (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10808173B2 (en) * | 2016-09-16 | 2020-10-20 | The Regents Of The University Of California | Luminescent hyperbolic metasurfaces |
| CN106569248B (en) * | 2016-11-02 | 2019-03-01 | 清华大学 | Cerenkov radiation device, preparation method and the method for extracting radiation |
| CN110289345B (en) * | 2019-06-17 | 2020-03-06 | 中国人民解放军军事科学院国防科技创新研究院 | Directional emission and adjustable polarization excimer light-emitting device and manufacturing method thereof |
| CN111682396B (en) * | 2020-04-30 | 2021-07-02 | 郑州航空工业管理学院 | Nano laser based on graphene-dielectric deep sub-wavelength hyperbolic dispersion cavity |
| CN111969085A (en) * | 2020-09-14 | 2020-11-20 | 南京邮电大学 | LED based on patterned substrate and preparation method thereof |
-
2021
- 2021-03-10 CN CN202110259593.3A patent/CN113097356B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN113097356A (en) | 2021-07-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Zhang et al. | Photonics and optoelectronics using nano-structured hybrid perovskite media and their optical cavities | |
| Ghobadi et al. | Strong light–matter interaction in lithography-free planar metamaterial perfect absorbers | |
| CN110187419B (en) | Visible light broadband perfect absorber based on semiconductor super surface | |
| US20090253227A1 (en) | Engineered or structured coatings for light manipulation in solar cells and other materials | |
| US8952239B2 (en) | Solar modules with enhanced efficiencies via use of spectral concentrators | |
| Priolo et al. | Silicon nanostructures for photonics and photovoltaics | |
| CN110289345B (en) | Directional emission and adjustable polarization excimer light-emitting device and manufacturing method thereof | |
| CN107959224B (en) | Surface plasmon laser based on metal cavity | |
| US6750393B2 (en) | Back reflector of solar cells | |
| Abdelraouf et al. | Novel design of plasmonic and dielectric antireflection coatings to enhance the efficiency of perovskite solar cells | |
| US10263144B2 (en) | System and method for light-emitting devices on lattice-matched metal substrates | |
| CN104269472A (en) | Surface plasmon electro-excitation source with medium-metal near-field coupling structure and manufacturing method thereof | |
| Ahmadivand et al. | Plasmonic photodetectors | |
| CN207938961U (en) | Surface phasmon laser based on wire chamber | |
| US20150340521A1 (en) | Methods and Systems for Controlling Phonon-Scattering | |
| CN117539105B (en) | On-chip all-optical switch, preparation method of on-chip all-optical switch and optoelectronic device | |
| CN113097356B (en) | On-chip light source, preparation method of on-chip light source and optoelectronic device | |
| Su et al. | Highly efficient dielectric optical incoupler for quantum well infrared photodetectors | |
| AU2009100376A4 (en) | Engineered or structured coatings for light manipulation in solar cells and other materials | |
| Yu et al. | Hot‐carrier engineering for two‐dimensional integrated infrared optoelectronics | |
| Nia et al. | Efficient luminescence extraction strategies and anti-reflective coatings to enhance optical refrigeration of semiconductors | |
| CN114891497B (en) | Method for enhancing phonon-assisted exciton up-conversion luminescence by utilizing plasmon microcavity | |
| Nefzaoui et al. | Nanostructures thermal emission optimization using genetic algorithms and particle swarms | |
| Yanase et al. | Surfactant effect of Bi on InAs quantum dot laser diode | |
| Flory et al. | Nanophotonics: From Fundamental Research to Applications |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |