CN113093448B - 混合集成型片上光频梳及其制备方法 - Google Patents

混合集成型片上光频梳及其制备方法 Download PDF

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CN113093448B
CN113093448B CN202110360256.3A CN202110360256A CN113093448B CN 113093448 B CN113093448 B CN 113093448B CN 202110360256 A CN202110360256 A CN 202110360256A CN 113093448 B CN113093448 B CN 113093448B
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王玲芳
时鑫
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University of Electronic Science and Technology of China
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Abstract

本发明公开了一种混合集成型片上光频梳，包括依次相邻的硅基底、二氧化硅衬底和薄膜铌酸锂，薄膜铌酸锂上异质集成一层氮化硅波导；氮化硅波导包括横跨薄膜铌酸锂上表面的氮化硅直波导，以及位于氮化硅直波导一侧的氮化硅微环；氮化硅微环下方的薄膜铌酸锂为圆周极化薄膜铌酸锂。本发明的片上光频梳结合了周期极化铌酸锂与氮化硅波导的优良特性，避免了直接刻蚀铌酸锂的工艺要求，能够利用铌酸锂的高效非线性，简化工艺的同时保证了器件效能；圆周极化薄膜铌酸锂引入的准相位匹配与氮化硅波导的尺寸设计引入的色散波匹配技术相结合，使得对泵浦波的频率要求突破了单频率的限制，实现可调谐自由光谱范围的微环。

Description

混合集成型片上光频梳及其制备方法
技术领域
本发明属于集成光学领域，涉及一种生物光子学以及光谱分析器件，特别是一种混合集成型片上光频梳及其制备方法。
背景技术
为提高时间标准的高精确度，原子钟技术在不断的进步，作为原子钟的核心技术之一的光频梳也自面世以来便赢得了科研工作者的极大关注。得益于激光源与集成光学技术的高速发展，光频梳的实现方式变得多种多样，利用超短脉冲在器件材料中的非线性特性，光学频率梳能够在从近红外到远紫外的宽光谱区域进行合成。光谱中产生不同的频率还能够高保真的传输到中红外、太赫兹和微波频域，实现不同频域范围内精准测量。种种优势使得光学频率梳被广泛地应用于多种不同的光学、原子、分子和固态系统，包括X射线和阿秒脉冲的产生、场相关过程中的相干控制、分子指纹识别、气体传感、原子钟测试、原子光谱仪的校准以及精确测距等诸多应用方向。基于微谐振器的片上光频梳系统能够实现紧凑尺寸与低损耗的功率要求，并且能够与现有的半导体工艺技术相结合，利用微环结构的高Q值与谐振条件，增长超短脉冲在环中的非线性作用长度，实现超宽的频谱展宽，结合f-2f技术以实现频率测量与计算，是目前实现芯片级光频梳最具可能的实现方法。光学频率梳正向着实现不同光谱区域的覆盖，不同的频率分辨率并具有更小尺寸、功率的和更高集成度的系统方向发展，光学频率梳的进一步发展带来的技术更新将推动紧密光学测量的系统简化与精度持续提升，为未来的光谱分析、通信传输等领域提供重要的技术支持，具有深远的研究价值与意义。
目前片上光频梳的实现需要通过微谐振腔系统内超短脉冲的非线性效应将单频泵浦光展宽为超连续谱，以实现光频梳的谱宽要求，其器件的制备工艺要求较高，对材料和器件结构十分敏感，对泵浦源的选择局限于单频激光器。
发明内容
本发明的目的在于克服现有技术的不足，提供一种结合了周期极化铌酸锂与氮化硅波导的优良特性，避免了直接刻蚀铌酸锂的工艺要求，能够利用铌酸锂的高效非线性，简化工艺的同时保证了器件效能的混合集成型片上光频梳，并提供该片上光频梳的制备方法。
本发明的目的是通过以下技术方案来实现的：混合集成型片上光频梳，包括依次相邻的硅基底、二氧化硅衬底和薄膜铌酸锂，薄膜铌酸锂上异质集成一层氮化硅波导；
所述氮化硅波导包括横跨薄膜铌酸锂上表面的氮化硅直波导，以及位于氮化硅直波导一侧的氮化硅微环；
氮化硅微环下方的薄膜铌酸锂为圆周极化薄膜铌酸锂。
进一步地，所述氮化硅直波导与氮化硅微环相邻的波导段呈与氮化硅微环的外环平行的弧形。
本发明的另一个目的在于提供一种混合集成型片上光频梳制备方法，包括以下步骤：
S1、在硅基底上生长一层二氧化硅衬底，然后在二氧化硅衬底表面通过晶片键合切割得到薄膜铌酸锂，并对得到的基片进行清洗；
S2、在薄膜铌酸锂上溅射铬阻挡层，在铬阻挡层上旋涂光刻胶，经过标准光刻工艺制备表面圆周极化电极；
S3、施加电压，进行薄膜铌酸锂的圆周极化；
S4、完成薄膜铌酸锂的圆周极化后，通过湿法刻蚀去除圆周极化电极和铬阻挡层；
S5、通过化学气相沉积在薄膜铌酸锂上沉积一层氮化硅薄膜，然后在氮化硅薄膜上溅射一层铬；
S6、旋涂光刻胶，通过标准光刻工艺制备氮化硅波导图案；
S7、通过电子束刻蚀对光波导进行构图，制备氮化硅直波导与氮化硅微环，氮化硅微环部分与圆周极化薄膜铌酸锂部分对应；
S8、去除氮化硅波导表面的光刻胶和铬并进行清洗，完成器件制备。
本发明的有益效果是：
1、本发明的片上光频梳结合了周期极化铌酸锂与氮化硅波导的优良特性，避免了直接刻蚀铌酸锂的工艺要求，能够利用铌酸锂的高效非线性，简化工艺的同时保证了器件效能；
2、圆周极化薄膜铌酸锂引入的准相位匹配与氮化硅波导的尺寸设计引入的色散波匹配技术相结合，使得对泵浦波的频率要求突破了单频率的限制，能够在飞秒激光为连续谱输入的情况下工作，实现可调谐自由光谱范围的微环；
3、本发明提出的器件结构简化了器件工艺，并提出了一种突破泵浦源单模限制的可能方案，为更加灵活的片上光频梳设计提供了一种新思路。
附图说明
图1为本发明的混合集成新型片上光频梳的立体结构图；
图2为本发明的混合集成新型片上光频梳的俯视结构图；
图3为本发明的混合集成新型片上光频梳的侧视图；
附图标记说明：1-硅基底，2-二氧化硅衬底，3-薄膜铌酸锂，4-圆周极化薄膜铌酸锂，5-氮化硅直波导，6-氮化硅微环。
具体实施方式
本发明提出对薄膜铌酸锂进行圆周极化再在其上加载氮化硅微环波导，在飞秒锁模激光器泵浦下，在圆周极化铌酸锂部分通过铌酸锂的高效非线性以及准相位匹配实现模式匹配与频谱展宽，设计极化周期与波导尺寸使得二次谐波与色散波形成拍频，增强谐波处能量，通过f-2f技术实现光频梳的作用，测量重复频率、偏移频率等相关参数。通过在薄膜铌酸锂上进行圆周极化并加载氮化硅微环波导，一方面有效的将光场能量限制在波导区域附近，同时避免了直接刻蚀薄膜铌酸锂的工艺要求；另一方面铌酸锂的圆周极化引入准相位匹配技术以满足泵浦波与二次谐波的相位匹配，提高了微谐振腔的Q值与非线性效应的效率，通过改变泵浦的频率能够在不同频率处产生光频梳。
下面结合附图进一步说明本发明的技术方案。
如图1、图2和图3所示，本发明的混合集成型片上光频梳，包括依次相邻的硅基底1、二氧化硅衬底2和薄膜铌酸锂3，薄膜铌酸锂3上异质集成一层氮化硅波导；
所述氮化硅波导包括横跨薄膜铌酸锂3上表面的氮化硅直波导5，以及位于氮化硅直波导5一侧的氮化硅微环6；
氮化硅微环6下方的薄膜铌酸锂为圆周极化薄膜铌酸锂4(即铌酸锂的极化区域呈圆环状，对该圆环区域的铌酸锂进行周期极化，得到梳状的铌酸锂)。在薄膜铌酸锂上进行了圆周极化，并在对应位置加载了氮化硅微环，有效的避免了直接刻蚀薄膜铌酸锂的工艺困难，利用准相位匹配和色散波相位匹配技术进行铌酸锂圆周极化的设计与氮化硅波导的尺寸设计，能够有效的利用薄膜铌酸锂的高效非线性效应实现频谱展宽，提高光频梳的精确度的同时通过改变泵浦的频率能够在不同频率处产生光频梳。
进一步地，所述氮化硅直波导5与氮化硅微环6相邻的波导段呈与氮化硅微环6的外环平行的弧形。
本发明的混合集成型片上光频梳制备方法，包括以下步骤：
S1、在硅基底上生长一层二氧化硅衬底，然后在二氧化硅衬底表面通过晶片键合切割得到薄膜铌酸锂，并对得到的基片进行清洗；
S2、在薄膜铌酸锂上溅射铬阻挡层，在铬阻挡层上旋涂光刻胶，经过标准光刻工艺制备表面圆周极化电极，圆周极化电极用于对薄膜铌酸锂进行圆周极化，其形状为环状梳，环状梳下面的薄膜铌酸锂即为需要进行圆周极化的薄膜铌酸锂；
S3、施加电压(将步骤S2得到的圆周极化电极作为上电极，在基片底部放置导电盘作为下电极，在上下电极上施加电压)，进行薄膜铌酸锂的圆周极化；
S4、完成薄膜铌酸锂的圆周极化后，通过湿法刻蚀去除圆周极化电极和铬阻挡层；
S5、通过化学气相沉积(PECVD)在薄膜铌酸锂上沉积一层氮化硅薄膜，然后在氮化硅薄膜上溅射一层铬；
S6、旋涂光刻胶，通过标准光刻工艺制备氮化硅波导图案；
S7、通过电子束刻蚀对光波导进行构图，制备氮化硅直波导与氮化硅微环，氮化硅微环部分与圆周极化薄膜铌酸锂部分对应；
S8、去除氮化硅波导表面的光刻胶和铬并进行清洗，完成器件制备。
本领域的普通技术人员将会意识到，这里所述的实施例是为了帮助读者理解本发明的原理，应被理解为本发明的保护范围并不局限于这样的特别陈述和实施例。本领域的普通技术人员可以根据本发明公开的这些技术启示做出各种不脱离本发明实质的其它各种具体变形和组合，这些变形和组合仍然在本发明的保护范围内。

Claims (3)

1.混合集成型片上光频梳，其特征在于，包括依次相邻的硅基底(1)、二氧化硅衬底(2)和薄膜铌酸锂(3)，薄膜铌酸锂(3)上异质集成一层氮化硅波导；
所述氮化硅波导包括横跨薄膜铌酸锂(3)上表面的氮化硅直波导(5)，以及位于氮化硅直波导(5)一侧的氮化硅微环(6)；
氮化硅微环(6)下方的薄膜铌酸锂为圆周极化薄膜铌酸锂(4)。
2.根据权利要求1所述的混合集成型片上光频梳，其特征在于，所述氮化硅直波导(5)与氮化硅微环(6)相邻的波导段呈与氮化硅微环(6)的外环平行的弧形。
3.如权利要求1或2所述的混合集成型片上光频梳制备方法，其特征在于，包括以下步骤：
S1、在硅基底上生长一层二氧化硅衬底，然后在二氧化硅衬底表面通过晶片键合切割得到薄膜铌酸锂，并对得到的基片进行清洗；
S2、在薄膜铌酸锂上溅射铬阻挡层，在铬阻挡层上旋涂光刻胶，经过标准光刻工艺制备表面圆周极化电极；
S3、施加电压，进行薄膜铌酸锂的圆周极化；
S4、完成薄膜铌酸锂的圆周极化后，通过湿法刻蚀去除圆周极化电极和铬阻挡层；
S5、通过化学气相沉积在薄膜铌酸锂上沉积一层氮化硅薄膜，然后在氮化硅薄膜上溅射一层铬；
S6、旋涂光刻胶，通过标准光刻工艺制备氮化硅波导图案；
S7、通过电子束刻蚀对光波导进行构图，制备氮化硅直波导与氮化硅微环，氮化硅微环部分与圆周极化薄膜铌酸锂部分对应；
S8、去除氮化硅波导表面的光刻胶和铬并进行清洗，完成器件制备。
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