CN113089097A - Sampling device and method - Google Patents
Sampling device and method Download PDFInfo
- Publication number
- CN113089097A CN113089097A CN201911335221.3A CN201911335221A CN113089097A CN 113089097 A CN113089097 A CN 113089097A CN 201911335221 A CN201911335221 A CN 201911335221A CN 113089097 A CN113089097 A CN 113089097A
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- Prior art keywords
- chamber
- sample
- preheating
- vacuum
- reaction
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- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000005070 sampling Methods 0.000 title abstract description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 70
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 70
- 239000010439 graphite Substances 0.000 claims abstract description 70
- 238000006243 chemical reaction Methods 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000007789 sealing Methods 0.000 claims abstract description 31
- 238000001816 cooling Methods 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000008569 process Effects 0.000 description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 7
- 229910010271 silicon carbide Inorganic materials 0.000 description 7
- 238000004321 preservation Methods 0.000 description 3
- 238000005336 cracking Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
Abstract
The invention discloses a sample sending and taking device and a method, wherein the sample sending and taking device comprises: a reaction chamber for epitaxial growth of a substrate; the vacuum chamber comprises a vacuum chamber, the vacuum chamber is vacuumized to a set vacuum degree, and the vacuum chamber is connected with the reaction chamber through a first sealing door; the preheating chamber is used for preheating the substrate on the graphite tray and is connected with the vacuum chamber through a second sealing door; the sample sending chamber is used for sending and taking the graphite tray and is connected with the vacuum chamber through a third sealing door; and the mechanical arm is arranged in the vacuum chamber and used for transporting the graphite tray among the sample sending chamber, the preheating chamber and the reaction chamber. The substrate temperature rise and fall time is short, the substrate lofting and sampling speed is high, and the production efficiency is high.
Description
Technical Field
The invention relates to the technical field of silicon carbide epitaxial growth, in particular to a feeding and sampling device with a preheating function and a feeding and sampling method for silicon carbide epitaxial equipment.
Background
The silicon carbide epitaxial equipment is one kind of equipment for preparing silicon carbide monocrystal film material through chemical vapor deposition process. In the reaction process, the substrate is placed on a graphite tray, and the temperature needs to be rapidly increased and decreased, wherein the maximum temperature reaches over 1650 ℃, the temperature increase rate reaches 5 ℃/s, and the temperature decrease rate reaches 6 ℃/s. The epitaxial growth time usually takes 1/3 or less of the whole process, so that the improvement of the substrate lofting and sampling speed and the reduction of the temperature raising and lowering time have great value to the production efficiency. At present, silicon carbide epitaxial equipment comprises vertical, horizontal and planetary reaction tubes, and a sampling mode comprises a mechanical arm and a manual mode. The mechanical arm sampling can be carried out at a higher temperature, but the sampling is carried out at normal temperature; the manual sampling is carried out at normal temperature. The two methods need to heat the substrate from normal temperature to over 1650 ℃ during heating, the substrate heating and cooling time is long, the substrate lofting and sampling speed is slow, and the production efficiency is low.
Disclosure of Invention
The invention aims to provide a sample sending and taking device and a sample taking method, which aim to solve the technical problems of long substrate temperature rise and fall time, low substrate lofting and sampling speed and low production efficiency in the prior art.
In order to solve the above technical problem, one technical solution adopted by the present invention is to provide a sample feeding and sampling device, including: a reaction chamber for epitaxial growth of a substrate; the vacuum chamber comprises a vacuum chamber, the vacuum chamber is vacuumized to a set vacuum degree, and the vacuum chamber is connected with the reaction chamber through a first sealing door; the preheating chamber is used for preheating the substrate on the graphite tray and is connected with the vacuum chamber through a second sealing door; the sample sending chamber is used for sending and taking the graphite tray and is connected with the vacuum chamber through a third sealing door; and the mechanical arm is arranged in the vacuum chamber and used for transporting the graphite tray among the sample sending chamber, the preheating chamber and the reaction chamber.
In a specific embodiment of the present invention, the reaction chamber includes a reaction wall and a reaction cavity, and the reaction cavity is enclosed by the reaction wall; the reaction chamber is approximately cylindrical, and the graphite tray is placed at the central shaft position of the reaction cavity.
In a specific embodiment of the present invention, the preheating chamber includes a preheating wall and a preheating cavity, and the preheating cavity is enclosed by the preheating wall; the preheating chamber is internally provided with a support, the bottom of the support is provided with a heater, and the heater is used for heating the substrate placed on the graphite tray on the support.
In a specific embodiment of the present invention, the bracket includes a first bracket and a second bracket which are oppositely disposed, each of the first bracket and the second bracket includes a vertical portion, and horizontal portions are vertically extended toward each other on opposite surfaces of the two vertical portions; and one end of the horizontal part, which is far away from the vertical part, extends upwards and vertically to form a supporting part.
In an embodiment of the present invention, there are a plurality of the horizontal portions on each of the vertical portions, and the plurality of the horizontal portions are arranged at intervals along an extending direction of the vertical portion.
In a specific embodiment of the present invention, the preheating wall and the inner side of the second sealing door are both provided with an insulating layer.
In a specific embodiment of the present invention, the vacuum chamber comprises a vacuum wall enclosing the vacuum chamber; the vacuum chamber is in a regular polygon prism shape, the manipulator is arranged at the central position of the vacuum chamber, and several side surfaces of the vacuum wall are respectively connected with the reaction chamber, the preheating chamber and the sample conveying chamber.
In one embodiment of the present invention, the vacuum chamber is in the shape of a regular hexagonal prism.
In an embodiment of the present invention, the vacuum chamber and the reaction chamber, the preheating chamber and the sample transfer chamber respectively share a wall at the connection point.
In order to solve the above technical problem, another technical solution adopted by the present invention is to provide a sample sending method, in which the sample sending apparatus described in any one of the above embodiments is applied, including:
vacuumizing the vacuum chamber to a set range in advance;
placing at least one graphite tray into a sample sending chamber, and vacuumizing the sample sending chamber to a set range;
carrying the graphite tray in the sample feeding chamber to a preheating chamber through a mechanical arm;
heating the preheating chamber to a first set temperature;
carrying the graphite tray in the preheating chamber to the reaction chamber through a manipulator;
carrying out epitaxial growth in the reaction chamber, and cooling to a second set temperature after the epitaxial growth is finished;
and carrying the graphite tray in the reaction chamber to the sample sending chamber through the manipulator, cooling the sample sending chamber to a third set temperature, and taking out the graphite tray from the sample sending chamber.
The invention has the advantages that:
different from the prior art, by applying the technical scheme of the invention, the graphite tray is conveyed from the sample conveying chamber to the preheating chamber by the mechanical arm to preheat the substrate on the graphite tray, and then the graphite tray is conveyed from the preheating chamber to the reaction chamber, so that the temperature rise time of the substrate on the graphite tray is reduced, the cracking risk of the graphite tray caused by rapid temperature rise is reduced, and the service life of the graphite tray is prolonged; the substrate is initially cooled after epitaxial growth is completed in the reaction chamber, the graphite tray is conveyed to the sample conveying chamber from the reaction chamber through the manipulator, and the substrate on the graphite tray is further cooled in the sample conveying chamber, so that the cooling time of the substrate on the graphite tray is reduced; whole send kind and sample process, adopt the manipulator to carry, send kind fast, efficient and send kind and sample process steady, the shake of sample process of sample, improved production efficiency. In addition, the deformation of the substrate in the temperature rise process is reduced, and the quality of the silicon carbide film is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic view of the sample feeding and sampling apparatus according to the present invention;
FIG. 2 is a schematic view of the preheating chamber of the sample feeding and sampling apparatus according to the present invention.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "axial", "radial", "circumferential", and the like, indicate orientations and positional relationships based on the orientations and positional relationships shown in the drawings, and are used merely for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the device or element so referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Referring to fig. 1-2, an embodiment of the present invention provides a sample sending and sampling apparatus, including: a reaction chamber 10, a preheating chamber 20, a robot 30, a vacuum chamber 40, and a sample transfer chamber 50. The reaction chamber 10 is used for epitaxial growth of a substrate. And a vacuum chamber 40 including a vacuum chamber 42, the vacuum chamber 42 being evacuated to a set degree of vacuum, the vacuum chamber 40 being connected to the reaction chamber 10 through a first sealing door 13. The preheating chamber 20 is used for preheating the substrate on the graphite tray 14, and the preheating chamber 20 is connected to the vacuum chamber 40 through the second sealing door 26. The sample transfer chamber 50 is used for transferring the graphite tray 14, and the sample transfer chamber 50 is connected to the vacuum chamber 40 through a third sealing door 53. The robot 30 is disposed in the vacuum chamber 40 to transfer the graphite trays 14 among the sample transfer chamber 50, the preheating chamber 20, and the reaction chamber 10.
By applying the technical scheme of the embodiment, the graphite tray 14 is conveyed from the sample conveying chamber 50 to the preheating chamber 20 through the manipulator 30 to preheat the substrate on the graphite tray 14, and then the graphite tray 14 is conveyed from the preheating chamber 20 to the reaction chamber 10, so that the temperature rise time of the substrate on the graphite tray 14 is reduced, meanwhile, the cracking risk caused by rapid temperature rise of the graphite tray 14 is reduced, and the service life of the graphite tray 14 is prolonged; the substrate is primarily cooled after finishing epitaxial growth in the reaction chamber 10, the graphite tray 14 is conveyed from the reaction chamber 10 to the sample conveying chamber 50 through the manipulator 30, and the substrate on the graphite tray 14 is further cooled in the sample conveying chamber 50, so that the cooling time of the substrate on the graphite tray 14 is reduced; whole send kind and sample process adopts manipulator 30 to carry, send kind fast, efficient and send kind and the sample process steady, the shake of taking a sample with the sample, has improved production efficiency. In addition, the deformation of the substrate in the temperature rise process is reduced, and the quality of the silicon carbide film is improved.
In an embodiment, the reaction chamber 10 comprises a reaction wall 11 and a reaction chamber 12, and the reaction chamber 12 is enclosed by the reaction wall 11. The reaction chamber 10 is substantially cylindrical (the reaction chamber 12 is also substantially cylindrical), and the graphite tray 14 is placed at the central axis position of the reaction chamber 12, where the substrate on the graphite tray 14 is epitaxially grown. The reaction wall 11 has a cooling cavity 111 therein, and a cooling liquid circulating and flowing in and out of the cooling cavity 111 can take away heat to cool the substrate on the graphite tray 14 in the reaction cavity 12. The side of the reaction wall 11 close to the vacuum chamber 40 is provided with a first sealing door 13, and the first sealing door 13 can be arranged tangentially to the reaction wall 11.
In one embodiment, the preheating chamber 20 comprises a preheating wall 21 and a preheating chamber 22, the preheating chamber 22 being enclosed by the preheating wall 21. The preheating chamber 20 is a cube or a cuboid (the preheating chamber 22 is also a cube or a cuboid), a support 23 is arranged in the preheating chamber 22, a heater 24 is arranged at the bottom of the support 23, and the heater 24 is used for heating the substrate on the graphite tray 14 placed on the support 23. The preheating wall 21 is provided with a second sealing door 26 at a side thereof adjacent to the vacuum chamber 40.
Further, the bracket 23 includes a first bracket and a second bracket which are oppositely arranged, the first bracket and the second bracket both include vertical portions 231, horizontal portions 232 are vertically extended towards each other on opposite surfaces of the two vertical portions 231, and the two horizontal portions 232 are on the same horizontal plane; one end of the horizontal part 232 far away from the vertical part 231 extends upwards vertically to form a support part 233, and the top surfaces of the two support parts 233 are on the same horizontal plane. The horizontal portions 232 are vertically extended toward each other on the opposite surfaces of the two vertical portions 231, and the supporting portions 233 are vertically extended upward at the ends of the horizontal portions 232 away from the vertical portions 231, so that the graphite tray 14 can be placed on the top ends of the two supporting portions 233, and therefore, the graphite tray 14 is not in contact with and attached to the horizontal portions 232, and the robot 30 can grasp the graphite tray 14 conveniently.
Further, there are a plurality of horizontal portions 232 on each vertical portion 231, and the plurality of horizontal portions 232 are arranged at intervals along the extending direction of the vertical portion 231, and preferably, the distance between two adjacent horizontal portions 232 is equal. Therefore, a plurality of graphite trays 14 can be placed on the support 23, the graphite trays 14 are placed between two adjacent horizontal portions 232, and the distance between two adjacent horizontal portions 232 is equal, so that the graphite trays 14 can be conveniently taken and placed by the robot 30.
Further, the inside of preheating wall 21 and second sealing door 26 is provided with heat preservation 25, and heat preservation 25 can be the heat preservation cotton for prevent that the heat from giving off, improve preheating efficiency.
In one embodiment, the sample application chamber 50 includes a sample application wall 51 and a sample application cavity 52, and the sample application cavity 52 is defined by the sample application wall 51. The sample feeding chamber 50 is a cube or a cuboid (the sample feeding cavity 52 is also a cube or a cuboid), a third sealing door 53 is arranged on one side of the sample feeding wall 51 close to the vacuum chamber 40, and an opening and closing door 54 is arranged on one side of the sample feeding wall 51 far away from the vacuum chamber 40. The graphite tray 14 can be placed in the sample application chamber 50 by opening and closing the door 54 or the graphite tray 14 can be taken out from the sample application chamber 50.
In one embodiment, the vacuum chamber 40 includes a vacuum wall 41 and a vacuum chamber 42, the vacuum chamber 42 being enclosed by the vacuum wall 41. The vacuum chamber 40 is in a regular polygonal shape (the vacuum chamber 42 is also in a regular polygonal shape), the robot 30 is disposed at the center of the vacuum chamber 42, and several sides of the vacuum wall 41 are connected to the reaction chamber 10, the preheating chamber 20, and the sample transfer chamber 50, respectively, so that the robot 30 has the same distance to the reaction chamber 10, the preheating chamber 20, and the sample transfer chamber 50, thereby facilitating the transfer of the graphite trays 14 among the reaction chamber 10, the preheating chamber 20, and the sample transfer chamber 50. In the present embodiment, the vacuum chamber 40 has a regular hexagonal prism shape, and in other embodiments, the vacuum chamber 40 may have a regular triangular prism shape, a regular quadrangular prism shape, a regular pentagonal prism shape, or the like.
Furthermore, the vacuum chamber 40 shares a wall with the reaction chamber 10, the preheating chamber 20 and the sample transfer chamber 50, respectively, so that the cost can be saved.
The embodiment of the invention also provides a sample sending and sampling method, which comprises the following steps:
the vacuum chamber 40 is evacuated to a predetermined range in advance. Specifically, the set range may be 10-2Pa or less, and preferably, the vacuum chamber 40 may be evacuated to 10-2Pa in advance.
At least one graphite tray 14 is placed in the sample transfer chamber 50, and the sample transfer chamber 50 is evacuated to a predetermined range. Specifically, the switching door 54 of the sample transfer chamber 50 may be opened, at least one graphite tray 14 may be placed in the sample transfer chamber 50, then the switching door 54 may be closed, and the sample transfer chamber 50 may be evacuated to a set range, which is not more than 10-2Pa, so that the vacuum degrees of the sample transfer chamber 50 and the vacuum chamber 40 are equal.
The graphite tray 14 in the sample transfer chamber 50 is transferred to the preheating chamber 20 by the robot 30. Specifically, the third sealing door 53 and the second sealing door 26 are opened, and the robot 30 transfers the graphite trays 14 in the sample transfer chamber 50 one by one to the preheating chamber 20 and places them on the rack 23.
The preheat chamber 20 is heated to a first set temperature. Specifically, the third sealing door 53 and the second sealing door 26 are closed, and the heater 24 in the preheating chamber 20 heats the preheating chamber 20 to a first set temperature of 600 and 1000 ℃, preferably 1000 ℃.
The graphite trays 14 in the preheating chamber 20 are transferred to the reaction chamber 10 by the robot 30. Specifically, the second sealing door 26 and the first sealing door 13 are opened, the robot 30 transfers the graphite trays 14 in the preheating chamber 20 into the reaction chamber 10 one by one, and the robot 30 retracts the vacuum chamber 40 to complete the sample transfer.
The reaction chamber 10 is used for epitaxial growth, and after the epitaxial growth is completed, the temperature is reduced to a second set temperature. Specifically, the second sealing door 26 and the first sealing door 13 are closed, the reaction chamber 10 performs epitaxial growth on the substrate on the graphite tray 14, and after the epitaxial growth is completed, the reaction chamber 10 is cooled to a second set temperature, where the second set temperature is less than or equal to 800 ℃, and preferably, the second set temperature is 800 ℃.
The graphite tray 14 in the reaction chamber 10 is transferred to the sample transfer chamber 50 by the robot 30, the temperature of the sample transfer chamber 50 is lowered to a third set temperature, and the graphite tray 14 is taken out from the sample transfer chamber 50. Specifically, the first sealing door 13 and the third sealing door 53 are opened, the robot 30 transports the graphite trays 14 in the reaction chamber 10 into the sample transfer chamber 50 one by one, the robot 30 retracts to the vacuum chamber 40, the first sealing door 13 and the third sealing door 53 are closed, and the sample transfer chamber 50 is cooled to a third set temperature, wherein the third set temperature is less than or equal to 50 ℃, and preferably, the third set temperature is 50 ℃. And after the graphite tray 14 is cooled to the third set temperature, inflating the sample sending chamber 50 to atmospheric pressure, opening the closing door 54, taking out the graphite tray 14, and completing sampling.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (10)
1. A sample presentation apparatus, comprising:
a reaction chamber for epitaxial growth of a substrate;
the vacuum chamber comprises a vacuum chamber, the vacuum chamber is vacuumized to a set vacuum degree, and the vacuum chamber is connected with the reaction chamber through a first sealing door;
the preheating chamber is used for preheating the substrate on the graphite tray and is connected with the vacuum chamber through a second sealing door;
the sample sending chamber is used for sending and taking the graphite tray and is connected with the vacuum chamber through a third sealing door;
and the mechanical arm is arranged in the vacuum chamber and used for transporting the graphite tray among the sample sending chamber, the preheating chamber and the reaction chamber.
2. The sample presentation device according to claim 1, wherein the reaction chamber comprises a reaction wall and a reaction chamber, the reaction chamber being enclosed by the reaction wall; the reaction chamber is approximately cylindrical, and the graphite tray is placed at the central shaft position of the reaction cavity.
3. The sample presentation device according to claim 1, wherein the preheating chamber comprises a preheating wall and a preheating chamber, the preheating chamber being enclosed by the preheating wall; the preheating chamber is internally provided with a support, the bottom of the support is provided with a heater, and the heater is used for heating the substrate placed on the graphite tray on the support.
4. The sample presentation device as claimed in claim 3, wherein the rack comprises a first rack and a second rack arranged oppositely, the first rack and the second rack each comprise a vertical portion, and horizontal portions are vertically extended towards each other on opposite surfaces of the two vertical portions; and one end of the horizontal part, which is far away from the vertical part, extends upwards and vertically to form a supporting part.
5. The sample presentation device according to claim 4, wherein the number of the horizontal portions in each of the vertical portions is plural, and the plural horizontal portions are provided at intervals in an extending direction of the vertical portion.
6. The sample presentation device as claimed in claim 5, wherein the pre-heating wall and the inner side of the second sealing door are provided with insulating layers.
7. The sample presentation device according to claim 1, wherein the vacuum chamber comprises a vacuum wall enclosing the vacuum chamber; the vacuum chamber is in a regular polygon prism shape, the manipulator is arranged at the central position of the vacuum chamber, and several side surfaces of the vacuum wall are respectively connected with the reaction chamber, the preheating chamber and the sample conveying chamber.
8. The sample presentation device according to claim 7, wherein the vacuum chamber is regular hexagonal prism shaped.
9. The sample presentation device according to claim 7, wherein the vacuum chamber shares a wall with the reaction chamber, the preheating chamber, and the sample presentation chamber at their respective connections.
10. A sample sending method using the sample sending apparatus according to any one of claims 1 to 9, comprising:
vacuumizing the vacuum chamber to a set range in advance;
placing at least one graphite tray into a sample sending chamber, and vacuumizing the sample sending chamber to a set range;
carrying the graphite tray in the sample feeding chamber to a preheating chamber through a mechanical arm;
heating the preheating chamber to a first set temperature;
carrying the graphite tray in the preheating chamber to the reaction chamber through a manipulator;
carrying out epitaxial growth in the reaction chamber, and cooling to a second set temperature after the epitaxial growth is finished;
and carrying the graphite tray in the reaction chamber to the sample sending chamber through the manipulator, cooling the sample sending chamber to a third set temperature, and taking out the graphite tray from the sample sending chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911335221.3A CN113089097A (en) | 2019-12-23 | 2019-12-23 | Sampling device and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911335221.3A CN113089097A (en) | 2019-12-23 | 2019-12-23 | Sampling device and method |
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| Publication Number | Publication Date |
|---|---|
| CN113089097A true CN113089097A (en) | 2021-07-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911335221.3A Pending CN113089097A (en) | 2019-12-23 | 2019-12-23 | Sampling device and method |
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| CN (1) | CN113089097A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115613131A (en) * | 2022-10-17 | 2023-01-17 | 江苏汉印机电科技股份有限公司 | Vacuum chamber of silicon carbide epitaxial chemical vapor deposition system |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE202012001810U1 (en) * | 2012-02-22 | 2012-05-30 | Beneq Oy | Device for processing substrates |
| CN103594551A (en) * | 2013-10-17 | 2014-02-19 | 中国电子科技集团公司第四十八研究所 | Silicon-based gallium arsenide epitaxial material and device manufacturing equipment and manufacturing method |
| CN203607375U (en) * | 2013-11-04 | 2014-05-21 | 中晟光电设备（上海）有限公司 | Multiple reactor chamber system used to manufacture power device |
-
2019
- 2019-12-23 CN CN201911335221.3A patent/CN113089097A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE202012001810U1 (en) * | 2012-02-22 | 2012-05-30 | Beneq Oy | Device for processing substrates |
| CN103594551A (en) * | 2013-10-17 | 2014-02-19 | 中国电子科技集团公司第四十八研究所 | Silicon-based gallium arsenide epitaxial material and device manufacturing equipment and manufacturing method |
| CN203607375U (en) * | 2013-11-04 | 2014-05-21 | 中晟光电设备（上海）有限公司 | Multiple reactor chamber system used to manufacture power device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115613131A (en) * | 2022-10-17 | 2023-01-17 | 江苏汉印机电科技股份有限公司 | Vacuum chamber of silicon carbide epitaxial chemical vapor deposition system |
| CN115613131B (en) * | 2022-10-17 | 2023-11-28 | 江苏汉印机电科技股份有限公司 | Vacuum chamber of silicon carbide epitaxial chemical vapor deposition system |
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Application publication date: 20210709 |