CN113087502A - High-strength high-modulus magnesium-aluminum silicon substrate material and preparation method thereof - Google Patents

High-strength high-modulus magnesium-aluminum silicon substrate material and preparation method thereof Download PDF

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CN113087502A
CN113087502A CN202110333542.0A CN202110333542A CN113087502A CN 113087502 A CN113087502 A CN 113087502A CN 202110333542 A CN202110333542 A CN 202110333542A CN 113087502 A CN113087502 A CN 113087502A
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substrate material
silicon substrate
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李波
张平
谌祝廷
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University of Electronic Science and Technology of China
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Abstract

The invention belongs to the field of electronic ceramic materials, and particularly provides a high-strength high-modulus magnesium-aluminum silicon substrate material and a preparation method thereof, which are suitable for a very large scale integrated circuit packaging substrate; the substrate material comprises the following components: 11 to 16 wt% of MgO and Al2O318 to 28 wt% of SiO247 to 53 wt% of ZrO22 to 10 wt%, B2O32-6 wt% of BaO and 1-5 wt% of BaO. The invention effectively inhibits Indianite phase Mg by doping BaO2Al4Si5O18Promotes the formation of quartz solid solution phase (MgAl)2Si3O10)0.6To finally form (MgAl)2Si3O10)0.6And an embedded structure of Indianite, so that the internal stress of the material is increased, and good mechanical properties are obtained: bending strength up to 310MPa, Young's modulus up to 110GPa, and thermal expansionThe coefficient of expansion is lower: 4.3 to 4.7 x 10‑6The reliability of the integrated circuit package can be obviously improved; meanwhile, the magnesium-aluminum-silicon substrate material provided by the invention has the advantages of low dielectric constant, low dielectric loss, simple preparation process, low preparation cost and the like, is beneficial to industrial production, and has potential application value for a very large scale integrated circuit packaging substrate.

Description

High-strength high-modulus magnesium-aluminum silicon substrate material and preparation method thereof
Technical Field
The invention belongs to the field of electronic ceramic materials, and particularly provides a high-strength high-modulus magnesium-aluminum silicon substrate material and a preparation method thereof, which are suitable for a very large scale integrated circuit packaging substrate.
Background
With the development of high density of integrated circuit packaging, higher requirements are put forward on the mechanical properties of low temperature co-fired ceramic (LTCC) substrate materials; MgO-Al2O3-SiO2The substrate material is widely noticed due to its excellent dielectric properties, but still has the technical problems that high bending strength is difficult to achieve at a low sintering temperature (less than or equal to 950 ℃), and the like.
For example, in patent document CN108558215A, a high-strength low-thermal expansion coefficient glass ceramics and a preparation method thereof are provided, and the specific components are as follows: 5 to 15 wt% of MgO and Al2O325 to 35 wt% of SiO 240 to 50 wt%, B2O31 to 5 wt%, ZnO 1 to 10 wt%, ZrO 21 to 10 wt%; the main crystal phase is cordierite and a solid solution thereof, the bending strength of the material is improved by introducing ZnO, and the bending strength can reach 279MPa at most. However, with the rapid development of very large scale integrated circuits, higher requirements are put on the bending strength of magnesium-aluminum-silicon substrate materials.
Based on the high-strength high-modulus magnesium-aluminum silicon substrate material and the preparation method thereof.
Disclosure of Invention
The invention aims to provide a high-strength high-modulus magnesium-aluminum silicon substrate material and a preparation method thereof, which are used for further improving the bending strength and Young modulus of the magnesium-aluminum silicon substrate material so as to improve the reliability of integrated circuit packaging and serve as a very large scale integrated circuit packaging substrate.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
the high-strength high-modulus magnesium-aluminum silicon substrate material is characterized by comprising the following components in percentage by mass:
11 to 16 wt% of MgO,
Al2O318 to 28 wt% of a binder,
SiO247 to 53 wt%,
ZrO 22 to 10 wt% of a binder,
B2O32 to 6 wt% of a binder,
BaO accounts for 1-5 wt%.
The preparation method of the high-strength high-modulus magnesium-aluminum-silicon substrate material comprises the following steps:
step 1, calculating and weighing raw materials according to a component formula, mixing the raw materials by ball milling for 2-5 hours, and drying to obtain a dry material
Step 2, placing the dried material into a crucible, melting the dried material in a high-temperature furnace at 1500-1600 ℃ for 1-2 hours, and pouring the melted material into deionized water to carry out water quenching to obtain glass slag;
step 3, ball-milling the glass slag in an alumina tank for 1-2 hours by taking zirconium balls and deionized water as media, and drying to obtain glass powder;
step 4, ball-milling the glass powder in a nylon tank for 6-8 hours by taking zirconium balls and deionized water as media, and then drying and sieving to obtain powder with uniform granularity;
step 5, taking acrylic acid as an adhesive, granulating the powder, and performing dry pressing forming under 10-20 MPa to obtain a green body;
and 6, sintering the green body at 900-950 ℃ for 1-2 hours to obtain the high-strength and high-modulus magnesium-aluminum silicon substrate material.
Compared with the prior art, the invention has the beneficial effects that:
the invention provides a magnesium-aluminum-silicon substrate material, which effectively inhibits Indianite phase Mg through BaO doping2Al4Si5O18Promotes the formation of quartz solid solution phase (MgAl)2Si3O10)0.6Wherein a quartz solid solution phase (MgAl)2Si3O10)0.6The content is 70-75%, and finally (MgAl) is formed2Si3O10)0.6And an embedded structure of Indianite, so that the internal stress of the material is increased, and good mechanical properties are obtained: bending strength310MPa, Young's modulus of 110GPa, and low thermal expansion coefficient: 4.3 to 4.7 x 10-6The reliability of the integrated circuit package is obviously improved;
meanwhile, the magnesium-aluminum-silicon substrate material provided by the invention also has the advantages of low dielectric constant: 5.5-6.2(@1MHz), low dielectric loss: 2.0 to 2.5 x 10-3Excellent dielectric properties such as (@1MHz) and the like, and can improve the signal transmission speed and reduce the power consumption as a substrate material;
in addition, the magnesium-aluminum-silicon substrate material provided by the invention has the advantages of simple preparation process and low preparation cost, is beneficial to industrial production, and has potential application value for a very large scale integrated circuit packaging substrate.
Drawings
Fig. 1 is an XRD pattern of the high-strength high-modulus magnesium-aluminum silicon substrate material of example 3.
Fig. 2 is an SEM image of the high strength and high modulus magnesium aluminum silicon substrate material of example 3.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples.
The invention provides 5 embodiments, and the component formula and preparation process parameters of the high-strength high-modulus magnesium-aluminum-silicon substrate material in each embodiment are shown in table 1:
TABLE 1
Figure BDA0002996405300000031
Further, in each embodiment, the preparation method of the high-strength high-modulus magnesium-aluminum-silicon substrate material comprises the following steps:
step 1, according to MgO and Al in the component formula2O3、SiO2、ZrO2、B2O3Accurately calculating and weighing the actual dosage of the raw materials corresponding to each oxide according to the mass percentage of BaO; then, mixing materials by ball milling for 2-5 hours, and drying to obtain a dried material;
step 2, placing the dried material into a crucible, melting the dried material in a high-temperature furnace at 1500-1600 ℃ for 1-2 hours, and pouring the melted material into deionized water to carry out water quenching to obtain glass slag;
step 3, ball-milling the glass slag in an alumina tank for 1-2 hours by taking zirconium balls and deionized water as media, and drying to obtain glass powder;
step 4, ball-milling the glass powder in a nylon tank for 6-8 hours by taking zirconium balls and deionized water as media, and drying and sieving to obtain powder with uniform granularity;
step 5, taking acrylic acid as an adhesive, granulating the powder, and performing dry pressing forming under 10-20 MPa to obtain a green body;
and 6, sintering the green body at 900-950 ℃ for 1-2 hours to obtain the high-strength and high-modulus magnesium-aluminum silicon substrate material.
The high strength and high modulus magnesium aluminum silicon substrate material in the above 5 examples was tested, and taking example 3 as an example, the XRD chart and the SEM chart of the high strength and high modulus magnesium aluminum silicon substrate material are shown in fig. 1 and fig. 2, respectively, and it can be seen from the XRD chart that the main crystal phase is quartz solid solution phase (MgAl)2Si3O10)0.6The secondary crystal phase is Mg2Al4Si5O18(ii) a As seen from the SEM image, the BaO doping enables more crystal grains to be clearly seen, the crystal grains are completely embedded into the glass phase, and the microstructure is uniform and compact. Furthermore, the dielectric property, thermal property and mechanical property of the high-strength high-modulus magnesium-aluminum-silicon substrate material are tested, and the results are shown in table 2:
TABLE 2
Figure BDA0002996405300000041
As can be seen from the above table, the high-strength and high-modulus magnesium-aluminum silicon substrate material provided by the invention has excellent mechanical properties: the bending strength is 270-310 MPa, the Young modulus is 98-110 GPa, and the dielectric property is good: a dielectric constant of 5.5 to 6.2(@1MHz), a dielectric loss of 2.0 to 2.5X 10-3(@1MHz), and good thermal performance: a coefficient of thermal expansion of 4.3 to 4.7 x 10-6/° c; has potential application value for the very large scale integrated circuit packaging substrate。
While the invention has been described with reference to specific embodiments, any feature disclosed in this specification may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise; all of the disclosed features, or all of the method or process steps, may be combined in any combination, except mutually exclusive features and/or steps.

Claims (2)

1. The high-strength high-modulus magnesium-aluminum silicon substrate material is characterized by comprising the following components in percentage by mass:
11 to 16 wt% of MgO,
Al2O318 to 28 wt% of a binder,
SiO247 to 53 wt%,
ZrO22 to 10 wt% of a binder,
B2O32 to 6 wt% of a binder,
BaO accounts for 1-5 wt%.
2. The method of making a high strength and modulus magnesium aluminum silicon substrate material as claimed in claim 1, comprising the steps of:
step 1, calculating and weighing raw materials according to a component formula, mixing the raw materials by ball milling for 2-5 hours, and drying to obtain a dry material
Step 2, placing the dried material into a crucible, melting the dried material in a high-temperature furnace at 1500-1600 ℃ for 1-2 hours, and pouring the melted material into deionized water to carry out water quenching to obtain glass slag;
step 3, ball-milling the glass slag in an alumina tank for 1-2 hours by taking zirconium balls and deionized water as media, and drying to obtain glass powder;
step 4, ball-milling the glass powder in a nylon tank for 6-8 hours by taking zirconium balls and deionized water as media, and then drying and sieving to obtain powder;
step 5, taking acrylic acid as an adhesive, granulating the powder, and performing dry pressing forming under 10-20 MPa to obtain a green body;
and 6, sintering the green body at 900-950 ℃ for 1-2 hours to obtain the high-strength and high-modulus magnesium-aluminum silicon substrate material.
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Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08250829A (en) * 1995-03-09 1996-09-27 Sumitomo Kinzoku Electro Device:Kk Thick film paste and ceramic circuit board using it
DE19916296C1 (en) * 1999-04-12 2001-01-18 Schott Glas Alkali-free aluminoborosilicate glass and its use
CN1515513A (en) * 2003-01-02 2004-07-28 中晶光电科技股份有限公司 Composition of base plate glass for display
US20060108049A1 (en) * 2004-11-22 2006-05-25 Wang Carl B Process for the constrained sintering of a pseudo-symmetrically configured low temperature cofired ceramic structure
CN102515524A (en) * 2011-12-19 2012-06-27 彩虹（张家港）平板显示有限公司 Boroaluminosilicate glass substrate and preparation method thereof
CN103951194A (en) * 2014-04-21 2014-07-30 哈尔滨工业大学 Method for preparing MAS (MgO-Al2O3-SiO2) series microcrystal glass electronic substrate in water-based tape-casting mode
CN106904953A (en) * 2017-03-24 2017-06-30 电子科技大学 High-density packages high thermal expansion coefficient ceramic material and preparation method thereof
CN108503230A (en) * 2018-04-24 2018-09-07 佛山市奥耶克思机械设备有限公司 A kind of package substrate composite material and preparation method
CN108558215A (en) * 2018-05-24 2018-09-21 电子科技大学 A kind of High strength low heat expansion coefficient micro crystal glass and preparation method thereof
CN111320391A (en) * 2020-03-04 2020-06-23 景德镇陶瓷大学 Colorless transparent cordierite glass ceramic and preparation method thereof

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08250829A (en) * 1995-03-09 1996-09-27 Sumitomo Kinzoku Electro Device:Kk Thick film paste and ceramic circuit board using it
DE19916296C1 (en) * 1999-04-12 2001-01-18 Schott Glas Alkali-free aluminoborosilicate glass and its use
CN1515513A (en) * 2003-01-02 2004-07-28 中晶光电科技股份有限公司 Composition of base plate glass for display
US20060108049A1 (en) * 2004-11-22 2006-05-25 Wang Carl B Process for the constrained sintering of a pseudo-symmetrically configured low temperature cofired ceramic structure
CN102515524A (en) * 2011-12-19 2012-06-27 彩虹（张家港）平板显示有限公司 Boroaluminosilicate glass substrate and preparation method thereof
CN103951194A (en) * 2014-04-21 2014-07-30 哈尔滨工业大学 Method for preparing MAS (MgO-Al2O3-SiO2) series microcrystal glass electronic substrate in water-based tape-casting mode
CN106904953A (en) * 2017-03-24 2017-06-30 电子科技大学 High-density packages high thermal expansion coefficient ceramic material and preparation method thereof
CN108503230A (en) * 2018-04-24 2018-09-07 佛山市奥耶克思机械设备有限公司 A kind of package substrate composite material and preparation method
CN108558215A (en) * 2018-05-24 2018-09-21 电子科技大学 A kind of High strength low heat expansion coefficient micro crystal glass and preparation method thereof
CN111320391A (en) * 2020-03-04 2020-06-23 景德镇陶瓷大学 Colorless transparent cordierite glass ceramic and preparation method thereof

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