CN1130759C - Method for processing high-aspect-ratio structure - Google Patents
Method for processing high-aspect-ratio structure Download PDFInfo
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- CN1130759C CN1130759C CN 99125475 CN99125475A CN1130759C CN 1130759 C CN1130759 C CN 1130759C CN 99125475 CN99125475 CN 99125475 CN 99125475 A CN99125475 A CN 99125475A CN 1130759 C CN1130759 C CN 1130759C
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Abstract
The present invention provides a method, which comprises the following steps: A. providing a basal plate with a surface and at least one opening having a high aspect ratio at the surface; B. providing a vaporized first chemical substance inside the opening so as to form preparing layer; C. providing a second chemical substance inside the opening so as to realize the goal of cleaning, coating or etching. The preparing layer can help the subsequent second chemical substance be easily filled into the structure having a high aspect ratio, so that the goal of cleaning, coating or etching is realized.
Description
The present invention relates to the improvement method of a kind of cleaning, etching or coating high-aspect-ratio structure.The invention particularly relates to a kind of method, wherein the aqueous chemical material is vaporized earlier, condenses subsequently, at first be adsorbed on the substrate surface, this substrate surface has a high-aspect-ratio structure, carries out various processing then, to reach cleaning, coating or etched purpose.
Along with the progress of semiconductor technology, the mutual connection of the circuit element on wafer or the silicon substrate becomes tightr.In order to prevent the unnecessary interaction between these circuit elements, be filled with the gap or the trench of insulator, be provided for the physical property or the conductor wire of isolated element electrically.Yet when current densities continue to increase, the width in these gaps can reduce, thereby increased the aspect ratio in gap, and this aspect ratio is defined as the width of the height in gap divided by the gap, so cleaning, cloth is coated with or these narrower gaps of etching can become more difficult.
Especially, high-aspect-ratio structure or trench are important for the function of element.Thereby, for appropriate functional, must make that trench can fully be cleaned, coating or etching.Since surface tension, contact angle and specific geometric parameter, thus be difficult to usually material is inserted in the high-aspect-ratio structure, and be difficult to from high-aspect-ratio structure, take out material, and for example, this high-aspect-ratio structure is a trench capacitor.Especially, the size of high-aspect-ratio structure is than having a huge differential value (differential) (that is, 40: 1 differential values).When extreme hour of high-aspect-ratio structure, for example be positioned at the structure on the semiconductor crystal, this problem can worsen.
Disclose the method in order to cleaning, coating and etching plane of crystal in the prior art, these methods comprise ultrasonic waves concussion (megasonics), coagulate processing (condensed-phaseprocessing) mutually, shine (excimer laser beam irradiation) with the excimer laser processing equipment for chemical vapor deposition beam.The ultrasonic waves oscillator only removes effectively particle, and it can't be applied in the etching or coating process of high-aspect-ratio structure.
Handling mutually with fixed attention is a kind of method, in order to apply reactant to plane of crystal, removes subsequently.The method is condensed suitable processing gas, and forms a film on a cold substrate surface.After condensing, use the burst process energy source should the surface, and this film is vaporized fast with thermal activation.Though it also only can be applied to the plane of crystal of relatively flat effectively.In addition, the method is only effective to volatile substance, and particle is removed invalid.We believe that the pollutant or the foreign material that enter in the trench structure are not suitable for this clean method of vaporizing.
The irradiation of excimer laser processing equipment for chemical vapor deposition beam is a gassy system, and it is by using the substrate of laser bundle scanning tool trench structure, to remove surface particle.The method need scan whole base plate, and some great shortcomings are arranged though effectively.The first, the method is only effective to the plane of crystal of relatively flat.The second, excimer laser is more expensive and need suitable extra cost to be used to keep and operate.The 3rd, scan method itself can cause local thermal pressure, and this thermal pressure is unfavorable for the physical features and the usefulness of substrate.At last, the method only can be applicable to particle and removes.
In recent technology is made great efforts, try hard in commercial semiconductor approach, introduce complicated directional etch or deposition process.These methods combine the use of molecular beam technique.This method for example can't provide deposition uniformly effectively, and this suitable coating that deposits high-aspect-ratio structure uniformly is necessary.Thereby, need a kind of better method, in order to removing material from high-aspect-ratio structure, or coating material is on high-aspect-ratio structure.Described structure is just becoming more and more general in many industry especially semi-conductor industry.
For achieving the above object, the invention provides a kind of method, comprise the following steps:
A., one substrate is provided, and this substrate has a surface and is positioned at this lip-deep at least one perforate, and this perforate has a high aspect ratio;
B. provide first chemical substance that is vaporized to described at least one perforate, it is condensed, thereby form a preparation layers; And
C. provide one second chemical substance to described at least one perforate, to reach cleaning, coating or etched each purpose.
Aforesaid general description and detailed description hereinafter are all illustration of the present invention, and unrestricted.
Reference is the detailed description and the appended diagram of preferred embodiment hereinafter, can understand purpose of the present invention, feature and effect well, wherein:
When with reference to appended diagram and when reading hereinafter detailed description, can understand the present invention well.What should emphasize is that according to ordinary practice, the various features in the diagram are not to draw in proportion.For clarity sake, the size of various features can at random enlarge or dwindle.Comprise following diagram in the accompanying drawing:
Figure 1A and Figure 1B are respectively perspective view and the profiles that is arranged in the high-aspect-ratio structure of substrate, show the aqueous chemical material that is formed on the substrate surface;
Fig. 2 is the profile that shows according to preparation layers of condensing of the present invention, and this preparation layers of condensing is formed at the perforate inside of high-aspect-ratio structure;
Fig. 3 shows according to the present invention, in order to clean, to be coated with or etched purpose, fills up the profile of the chemical substance of perforate;
Fig. 4 is the setting that shows process chamber, and it can be used in according in the method for the present invention; And
Fig. 5 A and Fig. 5 B show respectively in the prior art with the present invention in, be deposited on the inhomogeneities of the film on the substrate.
The explanation of figure number
10 substrates
14 surfaces
20 high-aspect-ratio structures
22 open top
24 bottoms
26 sidewalls
28 inside
50 process chambers
The present invention comprises a kind of method, in order to removing materials from a high-aspect-ratio structure, and Deposition materials is in high-aspect-ratio structure. At first, by first chemical substance of vaporizing to process chamber In, to form a preparation layers of condensing on high-aspect-ratio structure, this process chamber remains in saturated Under the vapour pressure. Then, second chemical substance is directed in the high-aspect-ratio structure, this second change Learn material and comprise at least one composition that is same as this first chemical substance, for example following to reach Purpose: from this structure, remove the sidewall of dirty foreign material, this structure of etching and coating material in On the sidewall of this structure.
With reference to diagram, wherein identical reference symbol is represented components identical, and Figure 1A shows the substrate 10 with a surface 14.Though method of the present invention preferably is used on the semiconductor wafer substrate, this method also can be applicable to comprise high-aspect-ratio structure, and needs for example other substrates of processing that method of the present invention provides.Also show a high-aspect-ratio structure 20 among Figure 1A, this high-aspect-ratio structure is to be formed at (in diagram, the part of substrate 10 was excised already, to show the inside of high-aspect-ratio structure 20) in the substrate 10.Generally speaking, high-aspect-ratio structure 20 14 extends in the substrate 10 from the surface, and comprises an open top 22, a bottom 24 and at least one sidewall 26, and this sidewall is that the top 22 from structure 20 extends to bottom 24. Sidewall 26 and 24 definition, one inside 28, bottom.High-aspect-ratio structure 20 can form for example ellipse, circle, tall and thin shape or the like via many methods, and arbitrary shape wherein all can be handled by method of the present invention.The specific configuration of the high-aspect-ratio structure of being drawn in the diagram 20 is extremely to simplify, and it comprises four sidewalls 26, and these four sidewalls form a parallelogram inside 28.
In the prior art, because surface tension and specific geometric parameter, the inside 28 of the structure 20 of being drawn among Figure 1A is not easy to be used to fully to realize to clean, the chemical substance of coating or etching purpose covers.Chemical substance can't reach inner bottom 24 and sidewall 26, and it only is formed on the surface of substrate 14 usually, and retains on the open top 22 of structure 20.So, can't be by chemical substance Clean-or that etching is used, remove the material in the structure 20, and material can't insert in the structure, to carry out for example purpose of the deposition of the dielectric medium in trench is used.
In the present invention, the first chemical substance A ' is made by for example solvent in order to the second chemical substance A of cleaning, coating or etch structures 20 earlier.The SOG examples of material of coming from Allied Signal CCUFLOX138, this Allied Signal ACCUFLO X138 is as an organic polymer soln of whole district's planarization spin coating (spin-on coating), wherein contains Si (OH)
x, SiO
2And solvent.Wherein, the solvent that comprises methyl iso-butyl ketone (MIBK) can be used as the first chemical substance A ', and is coated with the second chemical substance A that purpose is used with ACCUFLO X138 as spin.Method of the present invention is shown by the order shown in Fig. 2 to Fig. 3, now is described as follows.At first, as shown in Figure 2, the aqueous chemical substance A ' be vaporized, be condensed in subsequently on the surface of substrate 10, and also be condensed in inner surface 24 and 26, to form a for example preparation layers.Then, chemical substance A is distributed on the same substrate 10, to reach cleaning for example shown in Figure 3, coating or etched purpose.
With regard to purpose of the present invention, " liquid " speech is normally defined pure material or second material dissolves is arranged in material wherein.For described method is suitably acted on, the aqueous chemical substance A ' comprise a liquid, this liquid provides the tightness of described method, and it can not change the integrality of chemical substance A.According to various factors, for example, contact angle and surface tension, and partly according to baseplate material, the aqueous chemical substance A ' can comprise different liquid.For example, be (for example, naked silicon semiconductor crystal) under the hydrophobic situation at baseplate material, because contact angle is very near 90 degree, so best liquid is pure water.In addition, when removing pollutant on high-aspect-ratio structure 20, for example, the mixture that comprises 95% water and 5% cleaning solvent is gratifying.Though according to substrate and the method for being carried out, can use various aqueous chemical substance A ', but as previously mentioned, the essential characteristic of chemical substance A ' will keep at least a composition identical with chemical substance A.
In preferred embodiment of the present invention, coating process is implemented on the substrate 10 of the process chamber 50 that is positioned at a sealing.The process chamber 50 of sealing can carry out the control that pressure is carried (pressurization) and vapour deposition (vapor deposition) by those skilled in the art.The setting of the process chamber 50 shown in Fig. 4 is not proportionally drawn.Fig. 4 be the process chamber 50 that shows a sealing, a substrate 10, an aspiration pump 62, with ultrasonic waves oscillator 63.In the method, make chemical substance A ' vaporization to the temperature that is higher than substrate, so that be condensed on the substrate 10 by a heating element 40.Before crystal is put into process chamber 50, process chamber 50 is taken out low pressure to 1～20 torrs, after chemical substance A ' adds process chamber, process chamber 50 is remained under the saturated vapour pressure (greater than 1 atmospheric pressure) subsequently, and in the entire method that adds chemical substance A, keep identical pressure.So the solvent of chemical substance A can be kept poised state in process chamber 50, can't reduce because of volatilization makes chemical substance A.Simultaneously, the composition of chemical substance A can keep stable.As shown in Fig. 5 A, in the prior art, especially in membrane deposition method, because internal solvent is very easily volatilized from film, therefore film thickness and the film character of the film that is deposited by chemical substance A become inhomogeneous all easily, and is especially all the more so on the edge of substrate.Yet, when process chamber keeps saturated vapour pressure, owing to can not reduce at the solvent of crystal edge, so the film that is deposited on the substrate can keep more evenly.
In arbitrary situation that high-aspect-ratio structure need be handled, preferably repeat these method several times usually.Especially, no matter in the removing of high-aspect-ratio structure, ablation or coating, the congealing step of the first chemical substance A ' is repeated, in order to fully and efficiently to guarantee applying of second chemical substance.In addition, the step chemical material (A ' and A) method in, substrate preferably remains in the spin.For example, in the step chemical substance A, according to the geometry of high-aspect-ratio structure 20, the viscosity of chemical substance A and the contact angle on surface 14, substrate can be in high rotating speed (being preferably 1000rpm) rotation down.Simultaneously, the ultrasonic waves oscillator can use with the crystal spin, to promote the even distribution of chemical substance A.And in last step, the clean crystal of available nitrogen or hot nitrogen is to accelerate the drying of plane of crystal; The baking of dewatering also can improve the usefulness of this method to crystal before method begins.
In sum, have some advantages according to of the present invention in order to the method for handling high-aspect-ratio structure:
1, clean, be coated with or etching before, by vaporization chemical substance A ', make a preparation layers be formed at the surface, inside of high-aspect-ratio structure.Preparation layers can help follow-up chemical substance A easily to fill up this high-aspect-ratio structure.
2, between chemical substance A and A ', have at least a composition identical.So when chemical substance A was distributed on the substrate surface, its globality can not change, therefore do not need again the character of chemical substance A to be done the substance characteristics analysis at a product.
3, chemical substance A can be from commercial acquisition, and chemical substance A ' is the part of chemical substance A.Usually, chemical substance A ' is the solvent part of chemical substance A, thereby, in order to the manufacturing chemistry substance A ' cost keep reasonable prices easily.
4, in preferred embodiment,, process chamber is remained in the saturated vapour pressure by the chemical substance A ' that use is vaporized.Thereby, because solvent is to remain under the balance in process chamber, thus the solvent of the chemical substance A inside on crystal edge can not reduce, so the chemical substance A that is distributed can remain on the substrate surface by specific composition.Therefore the abundance of chemical substance A can reduce, and this can solve the problem of film inhomogeneities in the art methods, can realize reducing simultaneously the purpose of manufacturing cost.
Since 5 chemical substance A ' are vaporized and are distributed on the substrate equably easily, so method of the present invention also can realize on nonrotational substrate.
Though show with reference to particular specific embodiment and illustrated that the present invention, the present invention are not limited only to described details.Particularly, the various concrete modification in the scope of the application's claim scope or equalization does not all depart from spirit of the present invention.
Claims (18)
1, a kind of method of handling high-aspect-ratio structure comprises the following steps:
A., one substrate is provided, and this substrate has a surface and is positioned at this lip-deep at least one perforate, and this perforate has a high aspect ratio;
B. provide first an aqueous chemical material that is vaporized to described at least one perforate, it is condensed in the described perforate; Then
C. provide one second aqueous chemical material to described condensing to have at least one of first chemical substance perforate,
Wherein said first chemical substance comprises at least a identical component with described second chemical substance.
2. the method for processing high-aspect-ratio structure as claimed in claim 1, wherein said perforate are defined by an at least one sidewall and a bottom.
3. the method for processing high-aspect-ratio structure as claimed in claim 2, wherein said first chemical substance that is vaporized is condensed to described at least one perforate, to form a preparation layers on described at least one sidewall and described bottom.
4, the method for processing high-aspect-ratio structure as claimed in claim 1, wherein this method is to implement in a process chamber.
5, the method for processing high-aspect-ratio structure as claimed in claim 4, wherein said process chamber remains in the saturated vapour pressure.
6, the method for processing high-aspect-ratio structure as claimed in claim 4, wherein said substrate are spins or are rotated in described process chamber.
7, the method for processing high-aspect-ratio structure as claimed in claim 1, wherein said first chemical substance that is vaporized is the solvent of described second chemical substance.
8, the method for processing high-aspect-ratio structure as claimed in claim 1, the temperature of wherein said substrate are lower than the temperature of described first chemical substance that is vaporized.
9, the method for processing high-aspect-ratio structure as claimed in claim 1, wherein said substrate are a semiconductor wafer or a liquid crystal display glass.
10, the method for processing high-aspect-ratio structure as claimed in claim 1, wherein said second chemical substance is in order to cleaning, coating or described at least one perforate of etching.
11, the method for processing high-aspect-ratio structure as claimed in claim 1, wherein said step B and described step C repeat to implement.
12, a kind of method of handling high-aspect-ratio structure comprises the following steps:
A., one substrate is provided, and this substrate has a surface and is positioned at described lip-deep at least one perforate, and this perforate is defined by an at least one sidewall and a bottom, and this perforate has a high aspect ratio;
B. place described substrate in a process chamber;
C., one first aqueous chemical material is provided;
D. vaporize the described first aqueous chemical material to the described process chamber,, and form an atomic layer at its sidewall and bottom so that it condenses to described at least one perforate; Then
E., one second aqueous chemical material is provided, and it comprises at least a while and also is contained in composition in the described first aqueous chemical material; And
F. guide the described second aqueous chemical material to described process chamber, this process chamber remains in the saturated vapour pressure, and the described second aqueous chemical material is entered in described at least one perforate.
13, the method for processing high-aspect-ratio structure as claimed in claim 12, the wherein said first aqueous chemical material that is vaporized is the solvent part of the described second aqueous chemical material.
14, as the method for the processing high-aspect-ratio structure of claim 12, the temperature of wherein said substrate is lower than the temperature of the described first aqueous chemical material that is vaporized.
15, the method for processing high-aspect-ratio structure as claimed in claim 12, wherein said substrate are a semiconductor wafer or a liquid crystal display glass.
16, the method for processing high-aspect-ratio structure as claimed in claim 12, the wherein said second aqueous chemical material are used for cleaning, coating or described at least one perforate of etching.
17, as the method for the processing high-aspect-ratio structure of claim 12, wherein said step D, E and F repeat to implement.
18, the method for processing high-aspect-ratio structure as claimed in claim 12, wherein said substrate spins or is rotated in described process chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 99125475 CN1130759C (en) | 1999-12-06 | 1999-12-06 | Method for processing high-aspect-ratio structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 99125475 CN1130759C (en) | 1999-12-06 | 1999-12-06 | Method for processing high-aspect-ratio structure |
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| Publication Number | Publication Date |
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| CN1299151A CN1299151A (en) | 2001-06-13 |
| CN1130759C true CN1130759C (en) | 2003-12-10 |
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| CN 99125475 Expired - Fee Related CN1130759C (en) | 1999-12-06 | 1999-12-06 | Method for processing high-aspect-ratio structure |
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