CN113067251A - Array waveguide all-solid-state laser - Google Patents
Array waveguide all-solid-state laser Download PDFInfo
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- CN113067251A CN113067251A CN202110412830.5A CN202110412830A CN113067251A CN 113067251 A CN113067251 A CN 113067251A CN 202110412830 A CN202110412830 A CN 202110412830A CN 113067251 A CN113067251 A CN 113067251A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
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- Optical Couplings Of Light Guides (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention relates to an array waveguide all-solid-state laser, which comprises a laser diode bar, wherein the laser diode bar comprises a plurality of light emitting points; the laser diode comprises a laser diode bar, a first cavity mirror array, a second cavity mirror array, a shaping module and a second cavity mirror array, wherein the first cavity mirror array, the first waveguide array, the second cavity mirror array and the shaping module are sequentially arranged in the light outgoing direction of the laser diode bar; the first waveguide array and the second waveguide array both comprise a plurality of ridge-shaped waveguides; each waveguide of the first waveguide array is arranged corresponding to each light-emitting point of the laser diode bar; each waveguide of the second waveguide array is arranged corresponding to each waveguide of the first waveguide array; the laser diode bar, the first cavity mirror array, the first waveguide array, the second cavity mirror array and the shaping module are all fixed on the heat sink. The invention limits the laser in the transverse and vertical directions through the ridge-shaped waveguide, thereby reducing the loss of the laser; the space is saved, the production difficulty is reduced, and the stability of the laser light source is improved through different cavity mirror structures and combination modes.
Description
Technical Field
The invention relates to an array waveguide all-solid-state laser, belonging to the technical field of lasers.
Background
Laser has been another important invention of human beings since the 20 th century, and has attracted people's attention as soon as it appears. The solid laser has the advantages of small volume, convenient use, large output power and the like, and has great application in the fields of display, military, processing, medical treatment and scientific research. With the advent of semiconductor lasers, the cost of lasers has become more and more of a concern, and low-cost high-power lasers have become a trend. Patent CN209823100U discloses an all solid state array laser. The disadvantage is that the laser light is easy to spread in the transverse and vertical directions when propagating in the array, and the loss is large. Meanwhile, the external cavity mirror enables the laser to be large in size and difficult to install, and production cost is improved.
Disclosure of Invention
In order to overcome the problems, the invention provides an array waveguide all-solid-state laser, which limits laser in the transverse direction and the vertical direction through a ridge-shaped waveguide and reduces the loss of the laser; the cavity mirror device has the advantages of saving space, reducing production difficulty, improving stability of a laser light source and the like through different cavity mirror settings and combination modes.
The technical scheme of the invention is as follows:
an array waveguide all-solid-state laser comprises a laser diode bar, wherein the laser diode bar comprises a plurality of light emitting points; a first cavity mirror array, a first waveguide array, a second cavity mirror array and a shaping module are sequentially arranged along the light-emitting direction of the laser diode bar; the first waveguide array and the second waveguide array both comprise ridge-shaped waveguides; each waveguide of the first waveguide array is arranged corresponding to each light-emitting point of the laser diode bar; each waveguide of the second waveguide array is arranged corresponding to each waveguide of the first waveguide array; the laser diode bar, the first cavity mirror array, the first waveguide array, the second cavity mirror array and the shaping module are all fixed on a heat sink.
Further, the first waveguide array is a neodymium-doped yttrium vanadate waveguide array, and the second waveguide array is a periodically poled lithium niobate waveguide array; and the distance between the adjacent waveguides of the neodymium-doped yttrium vanadate waveguide array and the periodically poled lithium niobate waveguide array is equal.
Furthermore, each waveguide of the neodymium-doped yttrium vanadate waveguide array comprises a silicon substrate, wherein a silicon dioxide cladding is covered on the silicon substrate, and a neodymium-doped yttrium vanadate ridge waveguide is arranged on the silicon dioxide cladding; a silicon dioxide cladding is covered on the neodymium-doped yttrium vanadate ridge waveguide; the ridge width of the neodymium-doped yttrium vanadate ridge type waveguide is 10-50 micrometers, and the height of the neodymium-doped yttrium vanadate ridge type waveguide is 10-50 micrometers; the thickness of the silica cladding is 1-20 microns.
Furthermore, each waveguide of the periodically poled lithium niobate waveguide array comprises a silicon substrate, a silica cladding is covered on the silicon substrate, a periodically poled lithium niobate ridge waveguide is arranged on the silica cladding, and the periodically poled lithium niobate ridge waveguide is covered with the silica cladding; the width of the ridge of the periodically poled lithium niobate ridge waveguide is 10-50 microns, and the height of the periodically poled lithium niobate ridge waveguide is 10-50 microns; the thickness of the silica cladding is 1-20 microns.
Furthermore, the polarization period of the periodically polarized lithium niobate waveguide array is set according to the design working temperature of the array waveguide all-solid-state laser.
Further, a high-transmittance film of 808 nm is plated on one side of the neodymium-doped yttrium vanadate waveguide array close to the laser diode bars, and a antireflection film of 1064 nm and an antireflection film of 532 nm are plated on the other side; one side of the periodically poled lithium niobate waveguide array, which is close to the neodymium-doped yttrium vanadate waveguide array, is plated with a 1064-nanometer antireflection film and a 532-nanometer high-reflection film, and the other side is plated with a 532-nanometer antireflection film.
Further, the first cavity mirror array and the second cavity mirror array comprise a plurality of cavity mirrors which are arranged corresponding to the laser diode bar light-emitting points; the cavity mirror of the first cavity mirror array is one of a plane mirror and a neodymium-doped yttrium vanadate end surface high-reflection film; the cavity mirror of the second cavity mirror array is one of a plano-concave cylindrical mirror and a periodically polarized lithium niobate high-reflection film.
Furthermore, each light-emitting point of the laser diode bars is subjected to optical fiber fast axis compression processing.
Further, the shaping module is a cylindrical focusing lens.
The invention has the following beneficial effects:
1. the laser limits each laser beam emitted by the laser diode bars in the transverse direction and the vertical direction through the ridge waveguide, so that the loss of pump laser is reduced.
2. In one embodiment of the laser, the cavity mirrors on two sides of the waveguide array are arranged to be high reflection films, so that the integration level of the laser is higher, the size of the laser is reduced, and the integration difficulty of the laser is reduced.
3. In one embodiment of the laser, the second cavity mirror array is set as a plano-concave cylindrical mirror, and forms a plano-concave cavity structure with the first cavity mirror array, so that the stability of the laser light source is improved.
Drawings
Fig. 1 is a schematic view of the overall structure of the present invention.
Fig. 2 is a top view of the present invention.
Fig. 3 is a schematic structural diagram of a neodymium-doped yttrium vanadate waveguide array in an embodiment of the invention.
Fig. 4 is a schematic structural diagram of a periodically poled lithium niobate waveguide array in an embodiment of the present invention.
The reference numbers in the figures denote:
1. a laser diode bar; 2. a first cavity mirror array; 3. a first waveguide array; 4. a second waveguide array; 5. a second array of mirrors; 6. a shaping module; 7. a heat sink; 8. a silicon substrate; 9. neodymium-doped yttrium vanadate ridge waveguides; 10. a silica cladding; 11. periodically poled lithium niobate ridge waveguides.
Detailed Description
The invention is described in detail below with reference to the figures and the specific embodiments.
Referring to fig. 1-4, an array waveguide all-solid-state laser includes a laser diode bar 1, where the laser diode bar 1 includes a plurality of light emitting points; a first cavity mirror array 2, a first waveguide array 3, a second waveguide array 4, a second cavity mirror array 5 and a shaping module 6 are sequentially arranged along the light emitting direction of the laser diode bar 1; the first waveguide array 3 and the second waveguide array 4 both comprise ridge-shaped waveguides; each waveguide of the first waveguide array 3 is arranged corresponding to each light emitting point of the laser diode bar 1; each waveguide of the second waveguide array 4 is arranged corresponding to each waveguide of the first waveguide array 3; the laser diode bar 1, the first cavity mirror array 2, the first waveguide array 3, the second waveguide array 4, the second cavity mirror array 5 and the shaping module 6 are all fixed on a heat sink 7. The first cavity mirror array 2, the first waveguide array 3, the second waveguide array 4 and the second cavity mirror array 5 form a resonant cavity.
In at least one embodiment, the first waveguide array 3 is a neodymium-doped yttrium vanadate waveguide array, and the second waveguide array 4 is a periodically-polarized lithium niobate waveguide array; and the distance between the adjacent waveguides of the neodymium-doped yttrium vanadate waveguide array and the periodically poled lithium niobate waveguide array is equal.
In at least one embodiment, each waveguide of the neodymium-doped yttrium vanadate waveguide array comprises a silicon substrate 8, a silica cladding 10 covers the silicon substrate 8, and a neodymium-doped yttrium vanadate ridge waveguide 9 is arranged on the silica cladding 10; the neodymium-doped yttrium vanadate ridge waveguide 9 is also covered with a silica cladding 10; the ridge width of the neodymium-doped yttrium vanadate ridge type waveguide 9 is 10-50 microns, and the height of the neodymium-doped yttrium vanadate ridge type waveguide is 10-50 microns; the silica cladding 10 has a thickness of 1-20 microns.
In at least one embodiment, each waveguide of the periodically poled lithium niobate waveguide array includes a silicon substrate 8, a silica cladding 10 covers the silicon substrate 8, a periodically poled lithium niobate ridge waveguide 11 is disposed on the silica cladding 10, and a silica cladding 10 covers the periodically poled lithium niobate ridge waveguide 11; the width of the ridge of the periodically poled lithium niobate ridge waveguide 11 is 10-50 microns, and the height of the periodically poled lithium niobate ridge waveguide is 10-50 microns; the silica cladding 10 has a thickness of 1-20 microns.
In at least one embodiment, the polarization period of the periodically poled lithium niobate waveguide array is set according to the design operating temperature of the array waveguide all-solid-state laser. The specific setting method is that the polarization period of the periodically polarized lithium niobate waveguide array is determined according to a Sellmeier equation and the design working temperature of the laser, and the formula is as follows:
wherein f is (T-T)0)(T+T0+2×273.16)；
Where λ is the polarization period, neThe refractive index of the extraordinary ray is constant, and the rest is constant, and the value is selected according to specific materials, T is adopted in the embodiment of the invention0＝24.5，a1＝5.756，a2＝0.0983，a3＝0.2020，a4＝189.32，a5＝12.52，a6＝1.32×10-2，b1＝2.860×10-6，b2＝4.700×10-8，b3＝6.113×10-8，b4＝1.516×10-4. In the present embodiment, the polarization period λ is 6.957 when the design operating temperature is 30 degrees celsius.
In at least one embodiment, a 808 nm high-transmittance film is plated on one side of the neodymium-doped yttrium vanadate waveguide array close to the laser diode bar 1, and a 1064 nm anti-reflection film and a 532 nm anti-reflection film are plated on the other side; one side of the periodically poled lithium niobate waveguide array, which is close to the neodymium-doped yttrium vanadate waveguide array, is plated with a 1064-nanometer antireflection film and a 532-nanometer high-reflection film, and the other side is plated with a 532-nanometer antireflection film.
In at least one embodiment, the first cavity mirror array 2 and the second cavity mirror array 5 include a plurality of cavity mirrors corresponding to the light-emitting points of the laser diode bars 1; the cavity mirror of the first cavity mirror array 2 is one of a plane mirror and a neodymium-doped yttrium vanadate end surface high-reflection film; the cavity mirror of the second cavity mirror array 5 is one of a plano-concave cylindrical mirror and a periodically polarized lithium niobate high-reflection film.
When the second cavity mirror array 5 is set as a plano-concave cylindrical mirror, a plano-concave resonant cavity is formed, and the stability of the laser light source is stronger; when first chamber mirror array 2 and second chamber mirror array 5 all set up to high anti-membrane, the integrated level of laser is higher, and the volume is littleer.
In at least one embodiment, each light-emitting point of the laser diode bar 1 is subjected to a fiber fast axis compression process.
In at least one embodiment, the shaping module 6 is a cylindrical focusing lens.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all equivalent structures made by using the contents of the specification and the drawings of the present invention or directly or indirectly applied to other related technical fields are included in the scope of the present invention.
Claims (9)
1. The array waveguide all-solid-state laser is characterized by comprising a laser diode bar (1), wherein the laser diode bar (1) comprises a plurality of light emitting points; a first cavity mirror array (2), a first waveguide array (3), a second waveguide array (4), a second cavity mirror array (5) and a shaping module (6) are sequentially arranged along the light outlet direction of the laser diode bar (1); the first waveguide array (3) and the second waveguide array (4) both comprise ridge-shaped waveguides; each waveguide of the first waveguide array (3) is arranged corresponding to each light emitting point of the laser diode bar (1); each waveguide of the second waveguide array (4) is arranged corresponding to each waveguide of the first waveguide array (3); the laser diode bar (1), the first cavity mirror array (2), the first waveguide array (3), the second waveguide array (4), the second cavity mirror array (5) and the shaping module (6) are all fixed on a heat sink (7).
2. The arrayed waveguide all-solid-state laser according to claim 1, wherein the first waveguide array (3) is a neodymium-doped yttrium vanadate waveguide array, and the second waveguide array (4) is a periodically poled lithium niobate waveguide array; and the distance between the adjacent waveguides of the neodymium-doped yttrium vanadate waveguide array and the periodically poled lithium niobate waveguide array is equal.
3. The arrayed waveguide all-solid-state laser according to claim 2, wherein each waveguide of the neodymium-doped yttrium vanadate waveguide array comprises a silicon substrate (8), a silica cladding (10) is covered on the silicon substrate (8), and a neodymium-doped yttrium vanadate ridge waveguide (9) is arranged on the silica cladding (10); the neodymium-doped yttrium vanadate ridge waveguide (9) is also covered with a silica cladding (10); the width of the ridge of the neodymium-doped yttrium vanadate ridge type waveguide (9) is 10-50 microns, and the height of the ridge is 10-50 microns; the silica cladding (10) has a thickness of 1-20 microns.
4. The arrayed waveguide all-solid-state laser according to claim 2, wherein each waveguide of the periodically poled lithium niobate waveguide array comprises a silicon substrate (8), a silica cladding (10) is covered on the silicon substrate (8), a periodically poled lithium niobate ridge waveguide (11) is arranged on the silica cladding (10), and a silica cladding (10) is covered on the periodically poled lithium niobate ridge waveguide (11); the width of the ridge of the periodically poled lithium niobate ridge waveguide (11) is 10-50 microns, and the height of the periodically poled lithium niobate ridge waveguide is 10-50 microns; the silica cladding (10) has a thickness of 1-20 microns.
5. The arrayed waveguide all-solid-state laser of claim 2, wherein the poling period of the periodically poled lithium niobate waveguide array is set according to a design operating temperature of the arrayed waveguide all-solid-state laser.
6. The arrayed waveguide all-solid-state laser according to claim 2, wherein one side of the neodymium-doped yttrium vanadate waveguide array, which is close to the laser diode bars (1), is plated with a 808 nm high-transmittance film, and the other side is plated with a 1064 nm anti-reflection film and a 532 nm anti-reflection film; one side of the periodically poled lithium niobate waveguide array, which is close to the neodymium-doped yttrium vanadate waveguide array, is plated with a 1064-nanometer antireflection film and a 532-nanometer high-reflection film, and the other side is plated with a 532-nanometer antireflection film.
7. The arrayed waveguide all-solid-state laser according to claim 2, wherein the first cavity mirror array (2) and the second cavity mirror array (5) comprise a plurality of cavity mirrors which are arranged corresponding to the light-emitting points of the laser diode bars (1); the cavity mirror of the first cavity mirror array (2) is one of a plane mirror and a neodymium-doped yttrium vanadate end face high-reflection film; the cavity mirror of the second cavity mirror array (5) is one of a plano-concave cylindrical mirror and a periodically polarized lithium niobate high-reflection film.
8. The arrayed waveguide solid-state laser of claim 1, wherein each light-emitting point of the laser diode bar (1) is subjected to a fiber fast axis compression process.
9. The array waveguide all-solid-state laser according to claim 1, wherein the shaping module (6) is a cylindrical focusing lens.
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| CN202110412830.5A CN113067251A (en) | 2021-04-16 | 2021-04-16 | Array waveguide all-solid-state laser |
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| CN202110412830.5A CN113067251A (en) | 2021-04-16 | 2021-04-16 | Array waveguide all-solid-state laser |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113809634A (en) * | 2021-08-31 | 2021-12-17 | 中山大学 | Hybrid integrated external cavity tunable laser based on lithium niobate photonic waveguide |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113809634A (en) * | 2021-08-31 | 2021-12-17 | 中山大学 | Hybrid integrated external cavity tunable laser based on lithium niobate photonic waveguide |
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