CN113066859A - Metal conductive film, preparation method thereof, thin film transistor and display device - Google Patents
Metal conductive film, preparation method thereof, thin film transistor and display device Download PDFInfo
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- CN113066859A CN113066859A CN202110232247.6A CN202110232247A CN113066859A CN 113066859 A CN113066859 A CN 113066859A CN 202110232247 A CN202110232247 A CN 202110232247A CN 113066859 A CN113066859 A CN 113066859A
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 216
- 239000002184 metal Substances 0.000 title claims abstract description 216
- 239000010408 film Substances 0.000 title claims abstract description 119
- 239000010409 thin film Substances 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 150000004767 nitrides Chemical class 0.000 claims abstract description 115
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 65
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000010949 copper Substances 0.000 claims description 49
- 239000000758 substrate Substances 0.000 claims description 47
- 229910052802 copper Inorganic materials 0.000 claims description 32
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 30
- 238000000151 deposition Methods 0.000 claims description 16
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 abstract description 19
- 238000007747 plating Methods 0.000 abstract description 5
- 229910045601 alloy Inorganic materials 0.000 abstract description 2
- 239000000956 alloy Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 200
- 238000010586 diagram Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000001755 magnetron sputter deposition Methods 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- 230000008021 deposition Effects 0.000 description 6
- 239000002346 layers by function Substances 0.000 description 6
- 239000002253 acid Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000002905 metal composite material Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 3
- 229910018069 Cu3N Inorganic materials 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 229910001431 copper ion Inorganic materials 0.000 description 3
- -1 copper nitride Chemical class 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- IUYOGGFTLHZHEG-UHFFFAOYSA-N copper titanium Chemical compound [Ti].[Cu] IUYOGGFTLHZHEG-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Abstract
The invention discloses a metal conductive film and a preparation method thereof, a thin film transistor and a display device, wherein the metal conductive film comprises a metal layer and a nitride layer, and the metal layer is made of a first metal; the nitride layer is stacked on one side of the metal layer, and the material of the nitride layer is the nitride of the first metal. According to the metal conductive film provided by the invention, the nitride layer with good adhesiveness is arranged on one side of the metal layer, so that the adhesiveness of the metal conductive film is improved; meanwhile, the nitride layer is made of the nitride of the first metal, the nitride can be obtained by film plating in a nitrogen environment, and compared with the traditional preparation process of an alloy or a multilayer metal structure, the preparation method of the nitride layer can be obtained by one-time film forming, and has the advantages of few steps and high efficiency; in addition, the nitride layer can be etched only by one etching solution, and the method is low in cost and high in efficiency.
Description
Technical Field
The invention relates to the technical field of display devices, in particular to a metal thin film conductive thin film and a preparation method thereof, a thin film transistor and a display device.
Background
With the gradual maturity of the technology of liquid crystal displays, people put higher demands on the liquid crystal displays: high resolution, large size, high refresh rate, etc. At present, the mainstream aluminum wire is used as the metal wire of the thin film transistor, so that the high resolution, large size, high refresh rate and the like of the liquid crystal display are difficult to realize, and copper with better conductivity is gradually developed in the industry as the metal wire. Compared with aluminum and copper, copper has better conductivity, can improve the delay problem of a large-size liquid crystal display circuit and improve the refresh rate, but the copper has poor adhesion with an insulating substrate and is easy to diffuse to an active layer of a thin film transistor to form larger leakage current, so that the whole TFT thin film transistor is failed.
Disclosure of Invention
The invention mainly aims to provide a metal thin film conductive film, a preparation method thereof, a thin film transistor and a display device, and aims to provide a metal conductive film with good adhesion.
In order to achieve the above object, the present invention provides a metal conductive film, including:
the metal layer is made of a first metal; and the number of the first and second groups,
and the nitride layer is stacked on one side of the metal layer, and the material of the nitride layer is the nitride of the first metal.
Optionally, the first metal comprises copper.
Optionally, two nitride layers are arranged, and the two nitride layers are respectively arranged on two sides of the metal layer.
Optionally, the thickness of the metal layer is 1000-8000 angstroms.
Optionally, the nitride layer has a thickness of no greater than 500 angstroms.
In order to achieve the above object, the present invention further provides a method for preparing a metal conductive film, wherein the method for preparing a metal conductive film comprises the following steps:
depositing a coating film on the upper side of the substrate by using a first metal in a nitrogen atmosphere to form a first nitride layer; and the number of the first and second groups,
and stopping inputting the nitrogen, and forming a metal layer on one side of the first nitride layer, which is far away from the substrate, by adopting the first metal.
Optionally, after the step of forming a metal layer on the side of the first nitride layer facing away from the substrate by using the first metal after the step of stopping inputting the nitrogen gas, the method further includes the following steps:
and introducing nitrogen again, and depositing a coating film on one side of the metal layer, which is far away from the first nitride layer, by using the first metal to form a second nitride layer.
In addition, the invention also provides a preparation method of the metal conductive film, which comprises the following steps:
forming a metal layer on the upper side of the substrate by using a first metal; and the number of the first and second groups,
and under the condition of introducing nitrogen, adopting the first metal to deposit a coating film on one side of the metal layer, which is far away from the substrate, so as to form a nitride layer.
In addition, the invention also provides a thin film transistor, which comprises a grid electrode and a drain-source electrode layer arranged on one side of the grid electrode, wherein at least one of the grid electrode and the drain-source electrode layer comprises the metal conductive film;
the metal conductive film comprises a metal layer and a nitride layer, and the metal layer is made of a first metal; the nitride layer is stacked on one side of the metal layer, and the material of the nitride layer is the nitride of the first metal.
In addition, the invention also provides a display device which comprises the thin film transistor.
According to the technical scheme provided by the invention, the nitride layer with good adhesiveness is arranged on one side of the metal layer, so that the adhesiveness of the metal conductive film is improved; meanwhile, the nitride layer is made of the nitride of the first metal, and the nitride can be obtained by coating in a nitrogen environment in the process of coating by using a deposition technology, so that compared with the traditional preparation process of an alloy or a multilayer metal structure, the preparation of the nitride layer can be obtained by one-time film forming, the steps are few, and the efficiency is high; in addition, the nitride layer can be etched only by one etching solution, and the method is low in cost and high in efficiency.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other related drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a metal conductive film according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of another embodiment of a metal conductive film provided in the present invention;
FIG. 3 is a schematic structural diagram of another embodiment of a metal conductive film provided in the present invention;
FIG. 4 is a schematic flow chart illustrating a method for manufacturing a metal conductive film according to an embodiment of the present invention;
FIG. 5 is a schematic flow chart illustrating a method for manufacturing a metal conductive film according to another embodiment of the present invention;
FIG. 6 is a schematic flow chart illustrating a method for manufacturing a metal conductive film according to another embodiment of the present invention;
fig. 7 is a schematic structural diagram of a thin film transistor according to an embodiment of the present invention;
fig. 8 is a schematic structural diagram of a product of step S100 in the method for manufacturing the thin film transistor of fig. 7;
FIG. 9 is a schematic structural diagram of the product of step S101;
FIG. 10 is a schematic structural diagram of the product of step S102;
FIG. 11 is a schematic structural diagram of the product of step S103;
FIG. 12 is a schematic structural diagram of the product of step S200;
FIG. 13 is a schematic structural diagram of the product of step S300.
The reference numbers illustrate:
the implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. The examples, in which specific conditions are not specified, were conducted under conventional conditions or conditions recommended by the manufacturer. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products available commercially. In addition, the meaning of "and/or" appearing throughout includes three juxtapositions, exemplified by "A and/or B" including either A or B or both A and B. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
With the gradual maturity of the technology of liquid crystal displays, people put higher demands on the liquid crystal displays: high resolution, large size, high refresh rate, etc. At present, the mainstream aluminum wire is used as the metal wire of the thin film transistor, so that the high resolution, large size, high refresh rate and the like of the liquid crystal display are difficult to realize, and copper with better conductivity is gradually developed in the industry as the metal wire. Compared with aluminum and copper, copper has better conductivity, can improve the delay problem of a large-size liquid crystal display circuit and improve the refresh rate, but the copper has poor adhesion with an insulating substrate and is easy to diffuse to an active layer of a thin film transistor to form larger leakage current, so that the whole TFT thin film transistor is failed. In view of this, multi-metal composite structures or copper alloyed metal wire structures are generally used, but these structures have the following drawbacks: when the multilayer metal composite structure is prepared, a plurality of metal films need to be independently prepared, so that the working procedures and equipment are increased, and meanwhile, when the multilayer metal composite layer is patterned, a plurality of difficulties are faced, for example, two metals need to be respectively etched, for example, when the same etching solution is used for etching the metal of the composite layer, a plurality of defects and steps can be formed, and an ideal etching effect is difficult to achieve; the copper-alloyed metal wire structure has the defects of reduced conductivity, increased resistance, reduced conductivity, low deposition rate of a copper alloy film, improved etching difficulty and the like.
The invention provides a metal conductive film 10, wherein the metal conductive film 10 comprises a metal layer 11 and a nitride layer 12. Fig. 1 to 3 show an embodiment of a metal conductive film 10 according to the present invention. Referring to fig. 1, the metal layer 11 is made of a first metal; the nitride layer 12 is stacked on one side of the metal layer 11, and the material of the nitride layer 12 is a nitride of the first metal.
In the technical scheme provided by the invention, the nitride layer 12 with good adhesiveness is arranged on one side of the metal layer 11, so that the adhesiveness of the metal conductive film 10 is improved, and the subsequent processing difficulty is reduced. Meanwhile, the material of the nitride layer 12 is a nitride of the first metal, when a film is deposited by using a deposition technology, the nitride can be obtained by depositing a coating film under a nitrogen environment, and compared with the conventional multilayer metal composite structure, when the multilayer metal composite structure is prepared, a plurality of metal films need to be independently prepared, the steps are complex, the etching difficulty is high, the preparation of the nitride layer 12 can be obtained by once film forming, the steps are few, the efficiency is high, the nitride layer 12 can be etched by only one etching solution, and the cost is low and the efficiency is high.
The metal layer 11 has two opposite sides. At least one side of the metal layer 11 is provided with a nitride layer 12, specifically, in one embodiment, as shown in fig. 1 and 3, the nitride layer 12 is provided with a layer, the nitride layer 12 is laminated on one side of the metal layer 11, and considering that the nitride layer 12 has enhanced adhesion, when the metal conductive film 10 is used in a semiconductor product, the nitride layer 12 can be arranged towards the side needing enhanced adhesion; in another embodiment, referring to fig. 2, the nitride layer 12 is provided with two layers, two nitride layers 12 are respectively provided on two sides of the metal layer 11, and since the nitride layers 12 are provided on two sides of the metal layer 11, the adhesion of the metal conductive film 10 to the connection interfaces on the two sides is enhanced.
The first metal may be any one of common conductive metals such as nickel, silver, aluminum, copper, etc., and the present invention further selects copper with low price and good conductivity as the first metal to further enhance the conductivity of the metal conductive film 10. In addition, when the first metal is copper, the nitride layer 12 is a copper nitride layer, and the copper nitride layer can improve the adhesion between the copper film and the substrate, and can well inhibit copper ions from diffusing into the semiconductor material, thereby preventing the generation of leakage current and further improving the yield of the device.
In the embodiment, the thickness of the metal layer 11 is 1000 to 8000 angstroms so as to ensure the conductivity of the metal conductive film 10; the thickness of the nitride layer 12 is not more than 500 angstroms, and the nitride layer 12 is thin, so that the resistivity and etching efficiency of the metal layer 11 are not affected.
In order to achieve the above object, the present invention further provides a method for manufacturing the metal conductive film 10, and fig. 4 to 6 show a specific embodiment of the method for manufacturing the metal conductive film 10 according to the present invention. It is understood that the preparation method is different for different structures of the metal conductive film 10.
The preparation method shown in fig. 4 and 5 mainly aims at the structure of the metal conductive film 10 shown in fig. 1 and 2, and specifically, in the metal conductive film 10, at least the lower side surface of the metal layer 11 is provided with the nitride layer 12.
Referring to fig. 4, in the present embodiment, the method for manufacturing the metal conductive film 10 includes the following steps:
step S10a, a plating film is deposited on the upper side of the substrate 1 using the first metal in a nitrogen atmosphere to form the first nitride layer 12 a.
Specifically, this embodiment provides a reaction chamber, the substrate 1 after pretreatment is placed in the reaction chamber, then nitrogen is introduced into the chamber, so that the substrate 1 is in a nitrogen atmosphere, then, in this environment, a first metal is used to deposit a film on the upper side surface of the substrate 1, the deposition manner is further selected from a physical vapor deposition technique, such as a magnetron sputtering film deposition technique, a vacuum evaporation film deposition technique, and the like, the first metal reacts with nitrogen ions during deposition to produce a nitride, and the nitride is deposited on the surface of the substrate 1 to form the first nitride layer 12 a.
In actual processing, the thickness, quality and deposition efficiency of the first nitride layer 12a can be controlled by controlling the nitrogen flow rate and the reaction temperature. For example, the nitrogen flow rate can be controlled to be 100 to 150 standard milliliters per minute (sccm), within which the nitride can be generated smoothly and the generated nitride can be controlled to have better conductivity. In addition, in order to obtain the nitride layer 12 with both quality and processing efficiency, the reaction temperature can be controlled, specifically, the reaction temperature is controlled within the range of 80-150 ℃, so that the rapid growth of the nitride can be promoted, and the grown nitride layer 12 can be ensured to have a good crystal form and lower impedance.
Step S20a, stopping inputting the nitrogen gas, and forming a metal layer 11 on a side of the first nitride layer 12a away from the substrate 1 by using the first metal.
In this embodiment, after the first nitride layer 12a is formed, the nitrogen gas is stopped from being input, so that the chamber is in a low-nitrogen or nitrogen-free environment, and at this time, the first metal is used to continuously coat the upper surface of the first nitride layer 12a, so as to obtain the metal layer 11. Thus, the metal conductive film 10 in which the nitride layer 12 is laminated on the lower surface of the metal layer 11 can be obtained.
The nitrogen-free atmosphere is not absolutely nitrogen-free, but a low-nitrogen or nitrogen-free atmosphere refers to an atmosphere in which the nitrogen concentration is insufficient to react with the first metal to form a nitride. In specific implementation, an inert gas (e.g., non-nitrogen gas such as argon) may be introduced into the chamber to replace the nitrogen atmosphere.
The method can prepare the metal conductive film 10 by adopting the same chamber to continuously form the film, does not need to additionally increase the processes of film coating and material transferring, and has simple operation and high efficiency.
Further, for the structure of the metal conductive film 10 shown in fig. 2, that is, the nitride layers 12 are respectively stacked on the upper and lower sides of the metal layer 11, step S20a is followed by step S30 a.
Referring to fig. 6, in the present embodiment, the method for manufacturing the metal conductive film 10 includes the following steps:
step S10a, a plating film is deposited on the upper side of the substrate 1 using the first metal in a nitrogen atmosphere to form the first nitride layer 12 a.
Step S20a, stopping inputting the nitrogen gas, and forming a metal layer 11 on a side of the first nitride layer 12a away from the substrate 1 by using the first metal.
Step S30a, introducing nitrogen again, and depositing a plating film on the side of the metal layer 11 away from the first nitride layer 12a by using the first metal to form a second nitride layer 12 b.
The preparation method shown in fig. 6 mainly aims at the structure of the metal conductive film 10 shown in fig. 3, specifically, the nitride layer 12 is provided with one layer, and the nitride layer 12 is located on the upper side of the metal layer 11.
Referring to fig. 6, in the present embodiment, the method for manufacturing the metal conductive film 10 includes the following steps:
step S10b, forming a metal layer 11 on the upper side of the substrate 1 using the first metal;
step S20b, depositing a plating film on the side of the metal layer 11 away from the substrate 1 by using the first metal under the condition of introducing nitrogen gas to form a nitride layer 12.
The specific operation mode of each step of the preparation method is similar to that of the corresponding step of the preparation method, and is not repeated herein.
Note that, in the above-described manufacturing method, the substrate 1 mentioned may be a substrate material conventional in the art, for example, a silicon wafer, gallium arsenide, or the like; it may also refer to the carrier of the metal conductive film 10 when the metal conductive film 10 is used in semiconductor products. Taking the thin film transistor 100 with the bottom-gate structure as an example, when the source 5 of the thin film transistor 100 includes the present metal conductive film 10, the functional layer 4 adjacent to the source 5, for example, an ohmic contact layer, is the substrate 1 in the above step, and at this time, the metal layer 11 or the nitride layer 12 may be directly deposited on the upper surface of the ohmic contact layer.
In addition, the present invention further provides a thin film transistor 100, wherein the thin film transistor 100 includes a gate electrode 2 and a drain-source electrode layer disposed on one side of the gate electrode 2, and at least one of the gate electrode 2 and the drain-source electrode layer includes the metal conductive thin film 10; the metal conductive film 10 comprises a metal layer 11 and a nitride layer 12, wherein the metal layer 11 is made of a first metal; the nitride layer 12 is stacked on one side of the metal layer 11, and the material of the nitride layer 12 is a nitride of the first metal. The specific structure of the metal conductive film 10 refers to the above embodiments, and since the thin film transistor 100 of the present invention adopts all technical solutions of all the above embodiments, at least all the beneficial effects brought by the technical solutions of the above embodiments are achieved, and no further description is given here.
The thin film transistor 100 may be a bottom gate TFT, a top gate TFT, or other hetero-structure TFTs, which is not limited in the present invention. For convenience of description, the bottom-gate TFT will be described in detail below as an example, and it is understood that the above-described advantageous effects are obtained in any type of the thin film transistor 100.
Referring to fig. 7, in the present embodiment, the bottom gate TFT includes a substrate 1, a gate electrode 2, a gate insulating layer 3, a functional layer 4, a drain-source electrode layer, an insulating protective layer 7, and a transparent conductive film 8, which are sequentially disposed from bottom to top. The functional layer 4 is an active layer and an ohmic contact layer which are sequentially arranged from bottom to top, the drain-source electrode layer comprises a source electrode 5 and a drain electrode 6 which are arranged at the upper side of the functional layer 4 at intervals, an insulating protective layer 7 is used for providing insulating protection for the whole TFT, a transparent conductive film 8 is used for communicating the source electrode 5 and a pixel electrode, and the material of the transparent conductive film 8 can be an indium tin oxide film, a nano silver wire film and the like. In this embodiment, any one, two, or three of the gate 2, the source 5, and the drain 6 may be made of a metal conductive film 10, and in the structure shown in fig. 7, the gate 2, the source 5, and the drain 6 are made of the metal conductive film 10, except that the connection interface on the upper side of the gate 2 is the gate insulating layer 3, which has relatively small requirements on adhesion, copper ion diffusion resistance, and other properties, so in this embodiment, the metal conductive film 10 of the gate 2 is composed of a metal layer 11 and a copper titanium nitride layer 12 disposed on the lower side of the metal layer 11; the metal conductive film 10 of the source electrode 5 and the drain electrode 6 has a structure of Cu3N/Cu/Cu3N, thus, underlying Cu3N can prevent copper ions from diffusing into the active layer to cause device failure, and Cu on the top layer3N can form a good contact with the insulating protective layer 7.
Referring to fig. 7, 8, 12 and 13, in actual processing, the bottom-gate TFT may be manufactured as follows:
in step S100, after depositing the metal layer 11 on the substrate 1, a nitride layer 12 is deposited on the upper surface of the metal layer 11 in a nitrogen atmosphere to collectively form the gate 2.
Referring to fig. 9 to 11, in specific implementation, the step S100 may include the following steps:
step S101, after a metal layer 11 is deposited on a substrate 1, a nitride layer 12 is deposited on the upper surface of the metal layer 11 in a nitrogen atmosphere, and then photoresist is coated on the upper surface of the nitride layer 12 to form a glue layer 101;
step S102, arranging a plurality of mask plates 102 on the upper surface of the glue layer 101 to form a light resistance layer corresponding to a preset pattern, and performing exposure treatment to solidify the glue layer in an exposure area;
step S103, developing the exposed adhesive layer 101 to remove the blocking area adhesive layer;
step S104, after patterning with an etching solution, removing the residual glue layer 101 to obtain the gate 2.
In step S200, a gate insulating layer 3 and a functional layer 4 are sequentially formed on the upper surface of the gate 2.
In step S300, a first nitride layer 12a, a metal layer 11, and a second nitride layer 12b are sequentially formed on the upper surface of the functional layer 4, so as to obtain a drain-source electrode layer.
In step S400, an insulating protection layer 7 and a transparent conductive film 8 are sequentially formed on the drain-source electrode layer, so as to obtain a bottom-gate TFT (as shown in fig. 7).
In addition, the present invention also provides a display device including the thin film transistor 100 as described above. The thin film transistor 100 includes a gate electrode 2 and a drain-source electrode layer disposed on one side of the gate electrode 2, and at least one of the gate electrode 2 and the drain-source electrode layer includes the metal conductive thin film 10 as described above. The specific structure of the metal conductive film 10 refers to the above embodiments, and since the display device of the present invention adopts all the technical solutions of all the above embodiments, at least all the beneficial effects brought by the technical solutions of the above embodiments are achieved, and no further description is given here.
The technical solutions of the present invention are further described in detail below with reference to specific examples and drawings, it should be understood that the following examples are merely illustrative of the present invention and are not intended to limit the present invention.
Example 1
The structure of the metal conductive film 10 of this embodiment is shown in fig. 1, in which the metal conductive film 10 includes a metal layer 11 and a nitride layer 12, the nitride layer 12 is disposed on the lower side of the metal layer 11, the metal layer 11 is a copper layer, and the nitride layer 12 is Cu3And N layers.
Providing a reaction chamber, introducing nitrogen into the chamber, controlling the flow of the nitrogen to be 150sccm, placing the pretreated substrate 1 into the reaction chamber, adjusting the temperature of the chamber to be 150 ℃, and sputtering the substrate 1 by adopting a magnetron sputtering method to form Cu with the thickness of 10 angstroms3And N layers.
Stopping nitrogen gas input at Cu3The upper surface of the N layer is sputtered to form a copper layer with a thickness of 1000 angstroms, and the metal conductive film 10 is obtained.
The bonding force between the metal conductive film 10 and the glass substrate is detected, and the metal conductive film 10 is damaged when the applied external force is greater than 17N; the metal conductive film 10 was etched with a copper acid etching solution at an etching rate of 94A/Sec.
Example 2
The structure of the metal conductive film 10 of this embodiment is shown in fig. 1, in which the metal conductive film 10 includes a metal layer 11 and a nitride layer 12, the nitride layer 12 is disposed on the lower side of the metal layer 11, the metal layer 11 is a copper layer, and the nitride layer 12 is Cu3And N layers.
Providing a reaction chamber, introducing nitrogen into the chamber, controlling the flow of the nitrogen to be 120sccm, placing the pretreated substrate 1 into the reaction chamber, adjusting the temperature of the chamber to be 80 ℃, and co-sputtering the substrate 1 by adopting a magnetron sputtering method to form Cu with the thickness of 100 angstroms3And N layers.
Stopping nitrogen gas input at Cu3And sputtering the upper surface of the N layer to form a copper layer with the thickness of 5000 angstroms to obtain the metal conductive film 10.
The bonding force between the metal conductive film 10 and the glass substrate is detected, and the metal conductive film 10 is damaged when the applied external force is more than 18.9N; the metal conductive film 10 was etched with a copper acid etchant at an etching rate of 86A/Sec.
Example 3
The structure of the metal conductive film 10 of this embodiment is shown in fig. 1, in which the metal conductive film 10 includes a metal layer 11 and a nitride layer 12, the nitride layer 12 is disposed on the lower side of the metal layer 11, the metal layer 11 is a copper layer, and the nitride layer 12 is Cu3And N layers.
Providing a reaction chamber, introducing nitrogen into the chamber, controlling the flow of the nitrogen to be 100sccm, placing the pretreated substrate 1 in the reaction chamber, adjusting the temperature of the chamber to be 110 ℃, and co-sputtering the substrate 1 by adopting a magnetron sputtering method to form Cu with the thickness of 500 angstroms3And N layers.
Stopping nitrogen gas input at Cu3And sputtering the upper surface of the N layer to form a copper layer with the thickness of 6000 angstroms to obtain the metal conductive film 10.
The bonding force between the metal conductive film 10 and the glass substrate is detected, and the metal conductive film 10 is damaged when the applied external force is greater than 18.6N; the metal conductive film 10 was etched with a copper acid etching solution at an etching rate of 72A/Sec.
Example 4
The structure of the metal conductive film 10 of this embodiment is shown in fig. 2, the metal conductive film 10 includes a metal layer 11, and a first nitride layer 12a and a second nitride layer 12b respectively disposed on two sides of the metal layer 11, wherein the metal layer 11 is a copper layer, and both the first nitride layer 12a and the second nitride layer 12b are Cu3And N layers.
Providing a reaction chamber, introducing nitrogen into the chamber, controlling the flow of the nitrogen to be 130sccm, placing the pretreated substrate 1 in the reaction chamber, adjusting the temperature of the chamber to be 120 ℃, and co-sputtering the substrate 1 by adopting a magnetron sputtering method to form first Cu with the thickness of 20 angstroms3And N layers.
Using magnetron sputtering method on the first Cu3The upper surface of the N layer was sputtered to form a copper layer with a thickness of 8000 angstroms.
Introducing nitrogen again, controlling the flow of the nitrogen to be 130sccm, controlling the temperature of the chamber to be 120 ℃, and co-sputtering the upper surface of the copper layer by adopting a magnetron sputtering method to form second Cu with the thickness of 20 angstroms3N layers are formed on the surface of the substrate,a metallic conductive film 10 is obtained.
The bonding force between the metal conductive film 10 and the glass substrate is detected, and the metal conductive film 10 is damaged when the applied external force is more than 16.2N; the metal conductive film 10 is etched by using a copper acid etching solution, and the etching rate is 90A/Sec.
Example 5
The metal conductive film 10 of the present embodiment includes a metal layer 11 and a nitride layer 12, wherein the nitride layer 12 is disposed on the upper side of the metal layer 11, the metal layer 11 is a copper layer, and the nitride layer 12 is Cu3And N layers.
Providing a reaction chamber, placing the pretreated substrate 1 in the reaction chamber, and sputtering the substrate 1 by a magnetron sputtering method to form a metal layer 11 with the thickness of 2000 angstroms.
Introducing nitrogen into the chamber, controlling the flow of the nitrogen to be 150sccm, placing the pretreated substrate 1 into the reaction chamber, adjusting the temperature of the chamber to be 150 ℃, and sputtering the substrate 1 by adopting a magnetron sputtering method to form Cu with the thickness of 100 angstroms3N layers to obtain the metal conductive film 10.
The bonding force between the metal conductive film 10 and the glass substrate is detected, and the metal conductive film 10 is damaged when the applied external force is larger than 15N; the metal conductive film 10 was etched with a copper acid etching solution at an etching rate of 88A/Sec.
The above is only a preferred embodiment of the present invention, and it is not intended to limit the scope of the invention, and various modifications and changes will occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention shall be included in the scope of the present invention.
Claims (10)
1. A metallic conductive film, comprising:
the metal layer is made of a first metal; and the number of the first and second groups,
and the nitride layer is stacked on one side of the metal layer, and the material of the nitride layer is the nitride of the first metal.
2. The metallic conductive film of claim 1, wherein the first metal comprises copper.
3. The metallic conductive film of claim 1, wherein there are two nitride layers, two nitride layers being disposed on either side of the metallic layer.
4. The metal conductive film according to claim 1, wherein the metal layer has a thickness of 1000 to 8000 angstroms.
5. The metallic conductive film of claim 1, wherein the nitride layer has a thickness of no greater than 500 angstroms.
6. The preparation method of the metal conductive film is characterized by comprising the following steps of:
depositing a coating film on the upper side of the substrate by using a first metal in a nitrogen atmosphere to form a first nitride layer; and the number of the first and second groups,
and stopping inputting the nitrogen, and forming a metal layer on one side of the first nitride layer, which is far away from the substrate, by adopting the first metal.
7. The method for preparing a metal conductive film according to claim 6, wherein the step of stopping the nitrogen gas input and forming a metal layer on a side of the first nitride layer facing away from the substrate using the first metal further comprises the steps of:
and introducing nitrogen again, and depositing a coating film on one side of the metal layer, which is far away from the first nitride layer, by using the first metal to form a second nitride layer.
8. The preparation method of the metal conductive film is characterized by comprising the following steps of:
forming a metal layer on the upper side of the substrate by using a first metal; and the number of the first and second groups,
and under the condition of introducing nitrogen, adopting the first metal to deposit a coating film on one side of the metal layer, which is far away from the substrate, so as to form a nitride layer.
9. A thin film transistor comprising a gate electrode and a drain-source electrode layer provided on one side of the gate electrode, at least one of the gate electrode and the drain-source electrode layer comprising the metal conductive film according to any one of claims 1 to 5.
10. A display device, characterized in that the display device comprises the thin film transistor according to claim 9.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060269729A1 (en) * | 2005-05-25 | 2006-11-30 | Au Optronics Corp. | Copper conducting wire structure and fabricating method thereof |
| US20080149930A1 (en) * | 2006-12-21 | 2008-06-26 | Je-Hun Lee | Wire structure, method for fabricating wire, thin film transistor substrate, and method for fabricating the thing film transistor substrate |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060269729A1 (en) * | 2005-05-25 | 2006-11-30 | Au Optronics Corp. | Copper conducting wire structure and fabricating method thereof |
| US20080149930A1 (en) * | 2006-12-21 | 2008-06-26 | Je-Hun Lee | Wire structure, method for fabricating wire, thin film transistor substrate, and method for fabricating the thing film transistor substrate |
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