CN113066716A - Laser transfer printing method - Google Patents
Laser transfer printing method Download PDFInfo
- Publication number
- CN113066716A CN113066716A CN202110326858.7A CN202110326858A CN113066716A CN 113066716 A CN113066716 A CN 113066716A CN 202110326858 A CN202110326858 A CN 202110326858A CN 113066716 A CN113066716 A CN 113066716A
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- China
- Prior art keywords
- laser
- clamping plate
- area
- transfer printing
- target
- Prior art date
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- Granted
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- 238000010023 transfer printing Methods 0.000 title claims abstract description 56
- 238000000034 method Methods 0.000 title claims abstract description 17
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 41
- 239000013077 target material Substances 0.000 claims description 54
- 239000004065 semiconductor Substances 0.000 claims description 25
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 2
- 238000005034 decoration Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Manufacture Or Reproduction Of Printing Formes (AREA)
Abstract
The invention discloses a laser transfer printing method, which divides a plate-shaped amorphous silicon target into a plurality of transfer printing areas, enables the transfer printing areas on the target to be sequentially irradiated by laser by adjusting the position of the target, realizes the repeated utilization of the target while ensuring the transfer printing effect and can greatly reduce the cost of the target.
Description
Technical Field
The invention relates to the technical field of laser transfer printing, in particular to an amorphous silicon laser transfer printing method of a semiconductor device.
Background
Amorphous silicon is a semiconductor material widely used in the field of semiconductors and solar cells, and for example, a patterned amorphous silicon layer is prepared on the surface of a semiconductor device by a laser transfer printing method, wherein laser is used for irradiating an amorphous silicon target material, and the amorphous silicon on the target material is transferred to the surface of the semiconductor device to form the patterned amorphous silicon layer. The existing amorphous silicon target generally adopts a flat quartz material as a carrier plate, the service life of the plate-shaped amorphous silicon target is usually only one time in the laser transfer printing process, most areas of the plate-shaped amorphous silicon target are wasted, and the cost of amorphous silicon laser transfer printing is greatly increased.
Disclosure of Invention
The invention aims to provide a laser transfer printing method, which divides a plate-shaped amorphous silicon target into a plurality of transfer printing areas;
before the first laser irradiation, a certain transfer printing area which is not irradiated by the laser is opposite to the irradiation path of the laser, and the transfer printing area which is opposite to the irradiation path and is not irradiated by the laser on the target is taken as an area to be transferred;
during each laser irradiation, a semiconductor device to be subjected to laser transfer printing of amorphous silicon is placed under a target material, and a region of the semiconductor device to be subjected to transfer printing of amorphous silicon is opposite to a region to be subjected to transfer printing of the target material; the laser irradiates a region to be transferred of the target material according to a preset irradiation path, so that the amorphous silicon in the region irradiated by the laser on the target material is transferred to the surface of the semiconductor device, and a patterned amorphous silicon layer corresponding to the irradiation path is formed on the surface of the semiconductor device; taking the area irradiated by the laser on the target as a transfer area;
after each laser irradiation, the transferred area of the target material is moved out of the irradiation path, and another transferred area which is not irradiated by the laser on the target material is opposite to the irradiation path of the laser, so that the transferred area becomes an area to be transferred by the laser irradiation at the next time;
and sequentially irradiating the transfer printing areas on the target material by laser until all the transfer printing areas on the target material are irradiated by the laser.
The invention has the advantages and beneficial effects that: the plate-shaped amorphous silicon target material is divided into a plurality of transfer areas, the transfer areas on the target material are sequentially irradiated by laser by adjusting the position of the target material, the transfer effect is ensured, the target material is repeatedly utilized, and the cost of the target material can be greatly reduced.
Detailed Description
The following further describes embodiments of the present invention with reference to examples. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
The invention provides a laser transfer printing method, which divides a plate-shaped amorphous silicon target into a plurality of transfer printing areas;
before the first laser irradiation, a certain transfer printing area which is not irradiated by the laser is opposite to the irradiation path of the laser, and the transfer printing area which is opposite to the irradiation path and is not irradiated by the laser on the target is taken as an area to be transferred;
during each laser irradiation, a semiconductor device to be subjected to laser transfer printing of amorphous silicon is placed under a target material, and a region of the semiconductor device to be subjected to transfer printing of amorphous silicon is opposite to a region to be subjected to transfer printing of the target material; the laser irradiates a region to be transferred of the target material according to a preset irradiation path, so that the amorphous silicon in the region irradiated by the laser on the target material is transferred to the surface of the semiconductor device, and a patterned amorphous silicon layer corresponding to the irradiation path is formed on the surface of the semiconductor device; taking the area irradiated by the laser on the target as a transfer area;
after each laser irradiation, the transferred area of the target material is moved out of the irradiation path, and another transferred area which is not irradiated by the laser on the target material is opposite to the irradiation path of the laser, so that the transferred area becomes an area to be transferred by the laser irradiation at the next time;
and sequentially irradiating the transfer printing areas on the target material by laser until all the transfer printing areas on the target material are irradiated by the laser.
The invention also provides a method for implementing laser transfer printing by adopting the target material bearing device, which comprises the following steps:
the target bearing device comprises: the device comprises an upper clamping plate, a lower clamping plate, a horizontally-arranged top plate and a moving device, wherein the upper clamping plate and the lower clamping plate are used for clamping a plate-shaped amorphous silicon target material; the upper clamping plate is horizontally arranged under the top plate, and the lower clamping plate is horizontally arranged under the upper clamping plate; the top plate is provided with a first hollow-out area; the upper clamping plate is provided with a second hollowed-out area, the second hollowed-out area is positioned under the first hollowed-out area, and the projection of the first hollowed-out area on the upper clamping plate does not exceed the second hollowed-out area; the lower clamping plate is provided with a third hollowed-out area, the third hollowed-out area is positioned under the second hollowed-out area, and the projection of the second hollowed-out area on the lower clamping plate does not exceed the third hollowed-out area; the bottom surface of the top plate is further in threaded connection with a plurality of vertically-arranged screws, the screws penetrate through the lower clamping plate and the lower clamping plate, and the screws are located on the peripheries of the first hollow-out area, the second hollow-out area and the third hollow-out area; the screws are respectively sleeved with springs, and the springs on the screws are compressed between the upper clamping plate and the top plate; the screws are respectively sleeved with a gasket, and the gaskets on the screws are arranged between the upper clamping plate and the lower clamping plate; the thickness of each gasket is smaller than that of the plate-shaped amorphous silicon target material; the mobile device is positioned at the periphery of the first hollow-out area, the second hollow-out area and the third hollow-out area; the edge of the upper clamping plate is provided with an upper handle, and the edge of the lower clamping plate is provided with a lower handle;
the method for implementing laser transfer printing by using the target material bearing device comprises the following steps:
1) the upper clamp plate is lifted up (compressed by the spring) by operating the upper handle, and the lower clamp plate is pressed down by operating the lower handle when the upper clamp plate is lifted up, so that the lower clamp plate is kept stable, and the lower clamp plate is prevented from being mistakenly moved; the distance between the upper clamping plate and the lower clamping plate is increased to be suitable for inserting the plate-shaped amorphous silicon target by lifting the upper clamping plate, the target is horizontally inserted between the upper clamping plate and the lower clamping plate, and the edge of the target is positioned at the periphery of the first hollow-out area, the second hollow-out area and the third hollow-out area; after the target material is inserted between the upper clamping plate and the lower clamping plate, the upper clamping plate is loosened, the spring resets and presses down the upper clamping plate, and the target material is clamped by the upper clamping plate and the lower clamping plate; after the target is clamped by the upper clamping plate and the lower clamping plate, the levelness of the target is adjusted by adjusting screws; dividing the area of the target material right below the first hollow-out area into a plurality of transfer areas;
2) the moving device drives the top plate to move, so that the first hollowed-out area of the top plate is arranged under the laser, a certain transfer area which is not irradiated by the laser is opposite to an irradiation path of the laser, and the transfer area which is opposite to the irradiation path and is not irradiated by the laser on the target is taken as an area to be transferred;
3) placing a semiconductor device to be subjected to laser transfer printing of amorphous silicon under the third hollowed-out area of the lower clamping plate, wherein the area of the semiconductor device to be subjected to transfer printing of the amorphous silicon is opposite to the area to be subjected to transfer printing of the target material;
4) the laser irradiates a region to be transferred of the target material according to a preset irradiation path, so that the amorphous silicon in the region irradiated by the laser on the target material is transferred to the surface of the semiconductor device, and a patterned amorphous silicon layer corresponding to the irradiation path is formed on the surface of the semiconductor device; taking the area irradiated by the laser on the target as a transfer area;
5) after the laser irradiation is finished, the moving device drives the top plate to move, so that the transferred area of the target material moves out of the irradiation path, and the other transferred area which is not irradiated by the laser on the target material is opposite to the irradiation path of the laser, so that the transferred area becomes an area to be transferred;
6) and repeating the steps 3) to 5) until all the transfer printing areas on the target are irradiated by the laser.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the technical principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (6)
1. The laser transfer printing method is characterized in that a plate-shaped amorphous silicon target material is divided into a plurality of transfer printing areas;
before the first laser irradiation, a certain transfer printing area which is not irradiated by the laser is opposite to the irradiation path of the laser, and the transfer printing area which is opposite to the irradiation path and is not irradiated by the laser on the target is taken as an area to be transferred;
during each laser irradiation, a semiconductor device to be subjected to laser transfer printing of amorphous silicon is placed under a target material, and a region of the semiconductor device to be subjected to transfer printing of amorphous silicon is opposite to a region to be subjected to transfer printing of the target material; the laser irradiates a region to be transferred of the target material according to a preset irradiation path, so that the amorphous silicon in the region irradiated by the laser on the target material is transferred to the surface of the semiconductor device, and a patterned amorphous silicon layer corresponding to the irradiation path is formed on the surface of the semiconductor device; taking the area irradiated by the laser on the target as a transfer area;
after each laser irradiation, the transferred area of the target material is moved out of the irradiation path, and another transferred area which is not irradiated by the laser on the target material is opposite to the irradiation path of the laser, so that the transferred area becomes an area to be transferred by the laser irradiation at the next time;
and sequentially irradiating the transfer printing areas on the target material by laser until all the transfer printing areas on the target material are irradiated by the laser.
2. The laser transfer printing method according to claim 1, wherein the laser transfer printing is performed using a target carrying device;
the target bearing device comprises: the device comprises an upper clamping plate, a lower clamping plate, a horizontally-arranged top plate and a moving device, wherein the upper clamping plate and the lower clamping plate are used for clamping a plate-shaped amorphous silicon target material; the upper clamping plate is horizontally arranged under the top plate, and the lower clamping plate is horizontally arranged under the upper clamping plate; the top plate is provided with a first hollow-out area; the upper clamping plate is provided with a second hollowed-out area, the second hollowed-out area is positioned under the first hollowed-out area, and the projection of the first hollowed-out area on the upper clamping plate does not exceed the second hollowed-out area; the lower clamping plate is provided with a third hollowed-out area, the third hollowed-out area is positioned under the second hollowed-out area, and the projection of the second hollowed-out area on the lower clamping plate does not exceed the third hollowed-out area; the bottom surface of the top plate is further in threaded connection with a plurality of vertically-arranged screws, the screws penetrate through the lower clamping plate and the lower clamping plate, and the screws are located on the peripheries of the first hollow-out area, the second hollow-out area and the third hollow-out area; the screws are respectively sleeved with springs, and the springs on the screws are compressed between the upper clamping plate and the top plate; the mobile device is positioned at the periphery of the first hollow-out area, the second hollow-out area and the third hollow-out area;
the laser transfer printing is implemented by adopting the target material bearing device, and the method comprises the following steps:
1) lifting the upper clamping plate to compress the spring, increasing the distance between the upper clamping plate and the lower clamping plate to be suitable for inserting the plate-shaped amorphous silicon target, horizontally inserting the target between the upper clamping plate and the lower clamping plate, and enabling the edge of the target to be located at the periphery of the first hollow-out area, the second hollow-out area and the third hollow-out area; after the target material is inserted between the upper clamping plate and the lower clamping plate, the upper clamping plate is loosened, the spring resets and presses down the upper clamping plate, and the target material is clamped by the upper clamping plate and the lower clamping plate; a plurality of transfer printing areas are divided from the area of the target material right below the first hollow-out area;
2) the moving device drives the top plate to move, so that the first hollowed-out area of the top plate is arranged under the laser, a certain transfer area which is not irradiated by the laser is opposite to an irradiation path of the laser, and the transfer area which is opposite to the irradiation path and is not irradiated by the laser on the target is taken as an area to be transferred;
3) placing a semiconductor device to be subjected to laser transfer printing of amorphous silicon under the third hollowed-out area of the lower clamping plate, wherein the area of the semiconductor device to be subjected to transfer printing of the amorphous silicon is opposite to the area to be subjected to transfer printing of the target material;
4) the laser irradiates a region to be transferred of the target material according to a preset irradiation path, so that the amorphous silicon in the region irradiated by the laser on the target material is transferred to the surface of the semiconductor device, and a patterned amorphous silicon layer corresponding to the irradiation path is formed on the surface of the semiconductor device; taking the area irradiated by the laser on the target as a transfer area;
5) after the laser irradiation is finished, the moving device drives the top plate to move, so that the transferred area of the target material moves out of the irradiation path, and the other transferred area which is not irradiated by the laser on the target material is opposite to the irradiation path of the laser, so that the transferred area becomes an area to be transferred;
6) and repeating the steps 3) to 5) until all the transfer printing areas on the target are irradiated by the laser.
3. The laser transfer printing method according to claim 2, wherein an upper handle is provided at an edge of the upper clamp plate; in step 1), the upper clamp plate is lifted up by operating the upper handle.
4. The laser transfer printing method according to claim 2, wherein a lower handle is provided at an edge of the lower clamp plate; in the step 1), when the upper clamping plate is lifted, the lower clamping plate is pressed down by operating the lower handle, so that the lower clamping plate is kept stable.
5. The laser transfer printing method according to claim 2, wherein the plurality of screws are respectively sleeved with a gasket, and the gaskets on the plurality of screws are arranged between the upper clamping plate and the lower clamping plate; and the thickness of each gasket is smaller than that of the plate-shaped amorphous silicon target.
6. The laser transfer printing method according to claim 2, wherein in step 1), after the target is clamped by the upper clamping plate and the lower clamping plate, the levelness of the target is adjusted by adjusting screws.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110326858.7A CN113066716B (en) | 2021-03-26 | 2021-03-26 | Laser transfer printing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110326858.7A CN113066716B (en) | 2021-03-26 | 2021-03-26 | Laser transfer printing method |
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| Publication Number | Publication Date |
|---|---|
| CN113066716A true CN113066716A (en) | 2021-07-02 |
| CN113066716B CN113066716B (en) | 2024-02-13 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110326858.7A Active CN113066716B (en) | 2021-03-26 | 2021-03-26 | Laser transfer printing method |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0524976A (en) * | 1991-07-25 | 1993-02-02 | Canon Inc | Method for doping semiconductor and apparatus therefor |
| JPH09150582A (en) * | 1995-11-28 | 1997-06-10 | Ricoh Co Ltd | Method for forming laser transfer image and device therefor |
| KR20050072943A (en) * | 2004-01-08 | 2005-07-13 | 삼성전자주식회사 | Fabricating method of si thin layer |
| JP2005340788A (en) * | 2004-04-28 | 2005-12-08 | Semiconductor Energy Lab Co Ltd | Laser irradiation method, and semiconductor device formation method using the same |
| JP2006233266A (en) * | 2005-02-24 | 2006-09-07 | Fujikura Ltd | Thin film deposition apparatus |
| KR20070071967A (en) * | 2005-12-30 | 2007-07-04 | 삼성전자주식회사 | Methods for fabrication poly crystalline silicon film |
| JP2007181854A (en) * | 2006-01-06 | 2007-07-19 | Sekisui Chem Co Ltd | Apparatus for treating outer periphery of substrate |
| CN111933751A (en) * | 2020-08-12 | 2020-11-13 | 常州时创能源股份有限公司 | Method for locally depositing amorphous silicon on silicon wafer |
-
2021
- 2021-03-26 CN CN202110326858.7A patent/CN113066716B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0524976A (en) * | 1991-07-25 | 1993-02-02 | Canon Inc | Method for doping semiconductor and apparatus therefor |
| JPH09150582A (en) * | 1995-11-28 | 1997-06-10 | Ricoh Co Ltd | Method for forming laser transfer image and device therefor |
| KR20050072943A (en) * | 2004-01-08 | 2005-07-13 | 삼성전자주식회사 | Fabricating method of si thin layer |
| JP2005340788A (en) * | 2004-04-28 | 2005-12-08 | Semiconductor Energy Lab Co Ltd | Laser irradiation method, and semiconductor device formation method using the same |
| JP2006233266A (en) * | 2005-02-24 | 2006-09-07 | Fujikura Ltd | Thin film deposition apparatus |
| KR20070071967A (en) * | 2005-12-30 | 2007-07-04 | 삼성전자주식회사 | Methods for fabrication poly crystalline silicon film |
| JP2007181854A (en) * | 2006-01-06 | 2007-07-19 | Sekisui Chem Co Ltd | Apparatus for treating outer periphery of substrate |
| CN111933751A (en) * | 2020-08-12 | 2020-11-13 | 常州时创能源股份有限公司 | Method for locally depositing amorphous silicon on silicon wafer |
Non-Patent Citations (1)
| Title |
|---|
| 张梁;倪晓武;陆健;: "毫秒激光致固体靶材熔融喷溅的比较实验研究", 激光技术, no. 04, pages 18 - 22 * |
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| CN113066716B (en) | 2024-02-13 |
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