CN113064322A - Mask pattern correction method, storage medium and equipment - Google Patents
Mask pattern correction method, storage medium and equipment Download PDFInfo
- Publication number
- CN113064322A CN113064322A CN202110325288.XA CN202110325288A CN113064322A CN 113064322 A CN113064322 A CN 113064322A CN 202110325288 A CN202110325288 A CN 202110325288A CN 113064322 A CN113064322 A CN 113064322A
- Authority
- CN
- China
- Prior art keywords
- line segment
- pattern
- straight line
- distance
- included angle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
Abstract
The invention discloses a mask pattern correction method, a storage medium and equipment, wherein the mask pattern correction method at least comprises a first pattern, a second pattern and a third pattern, the third pattern is arranged between the first pattern and the second pattern, one side close to the third pattern is provided with a contour of the first pattern, the contour of the first pattern comprises a first oblique line segment, a first straight line segment and a second straight line segment, the first straight line segment and the second straight line segment are respectively connected with two ends of the first oblique line segment, and the first straight line segment and the second straight line segment are parallel; the outline of the second pattern comprises a second oblique line segment, a third straight line segment and a fourth straight line segment which are respectively connected with the two ends of the second oblique line segment, and the mask pattern which is parallel to the third straight line segment can realize the correction of the mask pattern by adjusting the first included angle between the first oblique line segment and the first straight line segment and the second included angle between the second oblique line segment and the third straight line segment, so that the defect of bridging at the positions among the first oblique line segment, the second oblique line segment and the third pattern is avoided.
Description
Technical Field
The present invention relates to the field of semiconductor technologies, and in particular, to a mask pattern correction method, a storage medium, and a device.
Background
In the fabrication of semiconductor devices, a photolithographic process is typically used to transfer a circuit layout pattern onto a semiconductor substrate. Before the photolithography process is performed, a mask pattern may be designed according to a desired circuit layout, the photolithography process may be used to transfer the mask pattern to a photoresist layer on a semiconductor substrate in a specific ratio, and the semiconductor substrate may be etched based on the photoresist layer on which a target pattern is formed to form a desired circuit layout pattern on the substrate.
As semiconductor devices are gradually miniaturized, an optical proximity effect is easily generated in a process of transferring a mask pattern to a photoresist layer using a photolithography process, thereby causing a defect of bridging or missing a target pattern formed on the photoresist layer. Therefore, it is desirable to provide a method for correcting a mask pattern to form an accurate circuit layout pattern on a substrate.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: how to provide a method for correcting a mask pattern to form an accurate circuit layout pattern.
To solve the above technical problems, the present invention provides a mask pattern correction method, a storage medium, and an apparatus.
A first aspect of the present invention provides a mask pattern correction method, the mask pattern including at least a first pattern, a second pattern, and a third pattern, the third pattern being disposed between the first pattern and the second pattern, on a side close to the third pattern, an outline of the first pattern including a first oblique line segment, a first straight line segment and a second straight line segment connected to both ends of the first oblique line segment, respectively, the first straight line segment and the second straight line segment being parallel; the outline of the second pattern includes a second oblique line segment, and a third straight line segment and a fourth straight line segment respectively connected to both ends of the second oblique line segment, the third straight line segment and the fourth straight line segment being parallel, and the correction method includes:
and correcting the mask pattern by adjusting a first included angle between the first oblique line segment and the first straight line segment and a second included angle between the second oblique line segment and the third straight line segment.
In some embodiments, adjusting a first included angle between the first oblique line segment and the first straight line segment and a second included angle between the second oblique line segment and the third straight line segment to achieve correction of the mask pattern includes:
and increasing the first included angle and the second included angle so as to adjust the first included angle of the first oblique line segment and the first straight line segment to a third included angle and adjust the second included angle of the second oblique line segment and the second included angle of the third straight line segment to a fourth included angle to realize correction of the mask pattern.
In some embodiments, the first pattern and the second pattern are symmetrically disposed along a central axis of the third pattern, the central axis of the third pattern being parallel to the first linear segment;
increasing the first included angle and the second included angle to adjust the first included angle of the first oblique line segment and the first straight line segment to a third included angle and adjust the second included angle of the second oblique line segment and the third straight line segment to a fourth included angle to realize correction of the mask pattern, including:
increasing the first included angle and the second included angle to adjust the first included angle of the first oblique line segment to the third included angle and the second oblique line segment to the second included angle of the third straight line segment to the fourth included angle, wherein the third included angle and the fourth included angle are equal.
In some embodiments, on a side away from the third pattern, the outline of the first pattern includes a first bent line segment parallel to a second bent line segment formed by sequentially connecting the first straight line segment, the first oblique line segment, and the second straight line segment; the contour of the second pattern comprises a third bent line segment, and the third bent line segment is parallel to a fourth bent line segment formed by sequentially connecting a third straight line segment, a second oblique line segment and a fourth straight line segment;
after adjusting a first included angle between the first oblique line segment and the first straight line segment and a second included angle between the second oblique line segment and the third straight line segment, the method for correcting the mask pattern further includes:
obtaining a first auxiliary pattern by comparing the first pattern before and after adjustment, and splicing the first auxiliary pattern to the first bending line segment to form a fifth bending line segment; and obtaining a second auxiliary pattern by comparing the second pattern before and after adjustment, and splicing the second auxiliary pattern to the third bent line segment to form a sixth bent line segment.
A second aspect of the present invention provides a mask pattern correction method, the mask pattern including at least a first pattern, a second pattern, and a third pattern, the third pattern being disposed between the first pattern and the second pattern, on a side close to the third pattern, an outline of the first pattern including a first oblique line segment, a first straight line segment and a second straight line segment respectively connected to both ends of the first oblique line segment, the first straight line segment and the second straight line segment being parallel; the outline of the second pattern includes a second oblique line segment, and a third straight line segment and a fourth straight line segment respectively connected to both ends of the second oblique line segment, the third straight line segment and the fourth straight line segment being parallel, and the correction method includes:
and correcting the mask pattern by adjusting a first distance from the intersection point of the first oblique line segment and the first straight line segment to the third pattern and a second distance from the intersection point of the second oblique line segment and the third straight line segment to the third pattern.
In some embodiments, adjusting a first distance from an intersection of the first diagonal line segment and the first straight line segment to the third pattern and a second distance from an intersection of the second diagonal line segment and the third straight line segment to the third pattern enables correction of the mask pattern, including:
increasing the first distance to adjust the first distance from the intersection of the first diagonal line segment and the first straight line segment to the third pattern to a third distance, the third distance being at least twice the first distance; and the number of the first and second groups,
increasing the second distance to adjust the second distance from the intersection of the second diagonal line segment and the third straight line segment to the third pattern to a fourth distance that is at least twice the second distance.
In some embodiments, adjusting a first distance from an intersection of the first diagonal line segment and the first straight line segment to the third pattern and a second distance from an intersection of the second diagonal line segment and the third straight line segment to the third pattern enables correction of the mask pattern, including:
increasing the first distance to adjust the first distance from the intersection of the first oblique line segment and the first straight line segment to the third pattern to a third distance, wherein the third distance is at least 1.5 times the distance from the second straight line segment to the third pattern; and the number of the first and second groups,
and increasing the second distance to adjust the second distance from the intersection point of the second oblique line segment and the third straight line segment to the third pattern to a fourth distance, wherein the fourth distance is at least 1.5 times of the distance from the fourth straight line segment to the third pattern.
In some embodiments, the first pattern and the second pattern are symmetrically disposed along a central axis of the third pattern, the central axis of the third pattern being parallel to the first linear segment;
increasing the first distance and the second distance to adjust the first distance from the intersection of the first diagonal line segment and the first straight line segment to the third pattern to a third distance and to adjust the second distance from the intersection of the second diagonal line segment and the third straight line segment to the third pattern to a fourth distance, comprising:
increasing the first distance and the second distance to adjust the first distance from the intersection of the first diagonal line segment and the first straight line segment to the third pattern to the third distance and to adjust the second distance from the intersection of the second diagonal line segment and the third straight line segment to the third pattern to a fourth distance, the third distance being equal to the fourth distance.
In some embodiments, on a side away from the third pattern, the outline of the first pattern includes a first bent line segment parallel to a second bent line segment formed by sequentially connecting the first straight line segment, the first oblique line segment, and the second straight line segment; the contour of the second pattern comprises a third bent line segment, and the third bent line segment is parallel to a fourth bent line segment formed by sequentially connecting a third straight line segment, a second oblique line segment and a fourth straight line segment;
after adjusting a first distance from an intersection of the first oblique line segment and the first straight line segment to the third pattern and a second distance from an intersection of the second oblique line segment and the third straight line segment to the third pattern, the method for correcting the mask pattern further includes:
obtaining a first auxiliary pattern by comparing the first pattern before and after adjustment, and splicing the first auxiliary pattern to the first bending line segment to form a fifth bending line segment; and obtaining a second auxiliary pattern by comparing the second pattern before and after adjustment, and splicing the second auxiliary pattern to the third bent line segment to form a sixth bent line segment.
In some embodiments, the mask pattern correction method further includes: and carrying out rule check on the corrected mask pattern.
In some embodiments, the performing a rule check on the corrected mask pattern includes: and carrying out mask rule check or photoetching rule check on the corrected mask pattern.
In some embodiments, after the lithography rule check on the corrected mask pattern, the mask pattern correction method further includes:
and performing secondary correction on the corrected mask pattern in response to a signal that the pattern hot spot is detected.
A third aspect of the present invention provides a storage medium having stored therein a computer program that, when executed by a processor, is capable of implementing the mask pattern correction method as described above.
A fourth aspect of the present invention provides an apparatus comprising a memory and a processor, the memory having stored therein a computer program that, when executed by the processor, is capable of implementing a mask pattern correction method as described above.
Compared with the prior art, one or more embodiments in the above scheme can have the following advantages or beneficial effects:
by applying the mask pattern correction method provided by the invention, for the mask pattern which at least comprises a first pattern, a second pattern and a third pattern, the third pattern is arranged between the first pattern and the second pattern, and on one side close to the third pattern, the outline of the first pattern comprises a first oblique line segment, a first straight line segment and a second straight line segment which are respectively connected with two ends of the first oblique line segment, and the first straight line segment is parallel to the second straight line segment; the outline of the second pattern comprises a second oblique line segment, a third straight line segment and a fourth straight line segment which are respectively connected with the two ends of the second oblique line segment, and mask patterns parallel to the third straight line segment and the fourth straight line segment can realize the correction of the mask patterns by adjusting the first included angle between the first oblique line segment and the first straight line segment and the second included angle between the second oblique line segment and the third straight line segment, so that the defect of bridging at the position between the first oblique line segment, the second oblique line segment and the third pattern is avoided, and the accurate circuit layout pattern is favorably formed.
Drawings
The scope of the present disclosure may be better understood by reading the following detailed description of exemplary embodiments in conjunction with the accompanying drawings. Wherein the included drawings are:
FIG. 1 illustrates a mask pattern after optical proximity correction and a pattern formed on a wafer after a photolithography process is performed based on the mask pattern;
FIG. 2 is a schematic diagram of a mask pattern provided by an embodiment of the present invention;
FIG. 3 is a schematic flow chart of a mask pattern correction method according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a mask pattern after adjusting a first angle and a second angle;
FIG. 5 is a schematic diagram of another mask pattern provided by an embodiment of the present invention;
FIG. 6 is a schematic diagram illustrating a corrected mask pattern according to an embodiment of the present invention;
FIG. 7 is a schematic flow chart illustrating a method for correcting a mask pattern according to one embodiment of the present invention;
fig. 8 is a schematic flow chart illustrating a mask pattern correction method according to a second embodiment of the present invention;
FIG. 9 is a diagram illustrating a corrected mask pattern according to a second embodiment of the present invention;
FIG. 10 is a schematic diagram illustrating another mask pattern provided in accordance with a second embodiment of the present invention;
FIG. 11 is a schematic flow chart illustrating another method for correcting a mask pattern according to a second embodiment of the present invention;
fig. 12 shows a schematic structural diagram of an apparatus provided by an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the following will describe in detail an implementation method of the present invention with reference to the accompanying drawings and embodiments, so that how to apply technical means to solve the technical problems and achieve the technical effects can be fully understood and implemented.
In the fabrication of semiconductor devices, a photolithographic process is typically used to transfer a circuit layout pattern onto a semiconductor substrate. Before the photolithography process is performed, a mask pattern may be designed according to a desired circuit layout, the photolithography process may be used to transfer the mask pattern to a photoresist layer on a semiconductor substrate in a specific ratio, and the semiconductor substrate may be etched based on the photoresist layer on which a target pattern is formed to form a desired circuit layout pattern on the substrate.
As semiconductor devices are gradually miniaturized, an optical proximity effect is easily generated in a process of transferring a mask pattern to a photoresist layer using a photolithography process, so that a target pattern formed on the photoresist layer has a defect of bridging or missing, as shown in fig. 1, fig. 1 shows a mask pattern (left figure) subjected to optical proximity correction and a pattern (right figure) formed on a wafer after performing a photolithography process based on the mask pattern, and as can be seen from fig. 1, a pattern defect occurs in a region surrounded by a rectangle in the pattern formed on the wafer. Therefore, it is desirable to provide a method for correcting a mask pattern to form an accurate circuit layout pattern on a substrate.
In view of the above, the present invention provides a mask pattern correction method, including at least a first pattern, a second pattern and a third pattern, the third pattern being disposed between the first pattern and the second pattern, on a side near the third pattern, an outline of the first pattern including a first oblique line segment, a first straight line segment and a second straight line segment respectively connected to both ends of the first oblique line segment, the first straight line segment and the second straight line segment being parallel; the outline of the second pattern comprises a second oblique line segment, a third straight line segment and a fourth straight line segment which are respectively connected with the two ends of the second oblique line segment, and the mask pattern which is parallel to the third straight line segment can realize the correction of the mask pattern by adjusting the first included angle between the first oblique line segment and the first straight line segment and the second included angle between the second oblique line segment and the third straight line segment, so that the defect of bridging at the positions among the first oblique line segment, the second oblique line segment and the third pattern is avoided.
Example one
Referring to fig. 2, fig. 2 is a schematic diagram illustrating a mask pattern according to an embodiment of the present invention, where the mask pattern at least includes a first pattern 21, a second pattern 22, and a third pattern 23, the third pattern 23 is disposed between the first pattern 21 and the second pattern 22, and on a side near the third pattern 23, a contour of the first pattern 21 includes a first oblique line segment 211, a first straight line segment 212 and a second straight line segment 213 respectively connected to two ends of the first oblique line segment 211, and the first straight line segment 212 and the second straight line segment 213 are parallel; the outline of the second pattern 22 includes a second oblique line segment 221, and a third straight line segment 222 and a fourth straight line segment 223 connected to both ends of the second oblique line segment 221, respectively, the third straight line segment 222 and the fourth straight line segment 223 being parallel.
In the embodiment of the present invention, the mask pattern may be a mirror-symmetric pattern in which the first pattern 21 and the second pattern 22 are symmetrically disposed along the central axis direction of the third pattern 23, and in another embodiment, the first pattern 21 and the second pattern 22 may not be symmetrical to each other. In the embodiment of the present invention, a mask pattern in which the first pattern 21 and the second pattern 22 are symmetrically disposed in the central axis direction of the third pattern 23 will be described as an example.
Referring to fig. 3, fig. 3 is a schematic flow chart of a mask pattern correction method according to an embodiment of the present invention, which includes:
in step S301, the mask pattern is corrected by adjusting a first angle between the first oblique line segment 211 and the first straight line segment 212 and a second angle between the second oblique line segment 221 and the third straight line segment 222.
In some embodiments, the first angle between the first oblique line segment 211 and the first straight line segment 212 and the second angle between the second oblique line segment 221 and the third straight line segment 222 are adjusted to be larger than the first angle between the first oblique line segment 211 and the first straight line segment 212 and the second angle between the second oblique line segment 221 and the third straight line segment 222. Before adjustment, a first included angle between the first oblique line segment 211 and the first straight line segment 212 may be θ1Before adjustment, the second included angle between the second oblique line segment 221 and the third straight line segment 222 may be θ2(ii) a After the adjustment, a third included angle between the first oblique line segment 211 and the first straight line segment 212 may be θ3The fourth angle between the second oblique line segment 221 and the third straight line segment 222 may be θ4And has a value of theta3﹥θ1，θ4﹥θ2. Specifically, referring to FIG. 4, FIG. 4 shows adjusting the first included angle and the second included angleThe subsequent mask pattern is schematically shown.
In some embodiments, increasing the first angle between the first oblique line segment 211 and the first straight line segment 212 and the second angle between the second oblique line segment 221 and the third straight line segment 222 may further include: increasing a first included angle between the first oblique line segment 211 and the first straight line segment 212 and a second included angle between the second oblique line segment 221 and the third straight line segment 222 to make the adjusted first included angle between the first oblique line segment 211 and the first straight line segment 212 equal to a second included angle between the second oblique line segment 221 and the third straight line segment 222, that is, θ3＝θ4. When the mask pattern before adjustment is such that the first pattern 21 and the second pattern 22 are symmetrically arranged along the central axis direction of the third pattern 23, by increasing the first included angle between the first oblique line segment 211 and the first straight line segment 212 and the second included angle between the second oblique line segment 221 and the third straight line segment 222, and making the first included angle between the first oblique line segment 211 and the first straight line segment 212 after adjustment equal to the second included angle between the second oblique line segment 221 and the third straight line segment 222, the mask pattern still in mirror symmetry along the central axis direction of the third pattern 23 can be obtained after adjustment, and the space between the first oblique line segment 211, the second oblique line segment 221 and the third pattern 23 is enlarged, so that the defect of bridging at the position between the first oblique line segment 211, the second oblique line segment 221 and the third pattern 23 in the mask pattern can be avoided.
In other embodiments, referring to FIG. 5, FIG. 5 shows another schematic diagram of a mask pattern provided by an embodiment of the present invention. On the side away from the third pattern 23, the outline of the first pattern 21 may include a first bent line segment, wherein the first bent line segment may include three line segments, namely, a straight line segment, a diagonal line segment, and another straight line segment, which are sequentially connected, and the first bent line segment is parallel to a second bent line segment formed by sequentially connecting a first straight line segment 212, a first diagonal line segment 211, and a second straight line segment 213; the outline of the second pattern 22 includes a third bent line segment, wherein the third bent line segment may include three line segments of a straight line segment, a diagonal line segment and another straight line segment, which are sequentially connected, and the third bent line segment is parallel to a fourth bent line segment formed by sequentially connecting a third straight line segment 222, a second diagonal line segment 221 and a fourth straight line segment 223;
after adjusting the first included angle between the first oblique line segment 211 and the first straight line segment 212 and the second included angle between the second oblique line segment 221 and the third straight line segment 222, the method may further include:
obtaining a first auxiliary pattern 61 by comparing the first pattern 21 before and after adjustment, and splicing the first auxiliary pattern 61 to the first bending line segment to form a fifth bending line segment, wherein the fifth bending line segment may include three line segments, namely a straight line segment, an oblique line segment and another straight line segment, which are connected in sequence, and in some embodiments, the fifth bending line segment is parallel to the adjusted second bending line segment; and obtaining a second auxiliary pattern 62 by comparing the second pattern 22 before and after adjustment, and splicing the second auxiliary pattern 62 to a third bending line segment to form a sixth bending line segment, wherein the sixth bending line segment may include three line segments, namely a straight line segment, an oblique line segment and another straight line segment, which are connected in sequence, and in some embodiments, the sixth bending line segment is parallel to the fourth bending line segment after adjustment. Specifically, referring to fig. 6, fig. 6 is a schematic diagram illustrating a corrected mask pattern according to a first embodiment of the present invention. The first auxiliary pattern 61 is spliced to the first bent line segment to form a fifth bent line segment, so that the first pattern 21 with uniform line width can be obtained after adjustment; the second auxiliary pattern 62 is spliced to the third bending line segment to form a sixth bending line segment, which is beneficial to obtaining the second pattern 22 with uniform line width after adjustment, and can avoid the defect caused by the line width narrowing after adjustment.
It should be noted that the mask pattern to be corrected may further include a plurality of patterns identical to the first pattern 21, and the patterns may be arranged in parallel and spaced apart from the first pattern 21 on the same side of the third pattern 23; it may also include a plurality of patterns identical to the second pattern 22, and the patterns may be arranged in parallel and spaced apart from the second pattern 22 on the same side of the third pattern 23 (not shown).
In some embodiments, referring to fig. 7, fig. 7 is a schematic flow chart of another mask pattern correction method provided in the first embodiment of the present invention, which may include:
step S301: the mask pattern is corrected by adjusting a first angle between the first oblique line segment 211 and the first straight line segment 212 and a second angle between the second oblique line segment 221 and the third straight line segment 222.
Step S302: the corrected mask pattern is subjected to a rule check.
When the corrected mask pattern meets the inspection rule, namely the mask pattern is inspected to have no defects, the mask pattern used for the photoetching process can be output; when the corrected mask pattern does not meet the inspection rule, that is, when the pattern hot spot is detected at the target position of the mask pattern, step S303 may be further performed.
Step S303: and performing secondary correction on the corrected mask pattern in response to the signal of detecting the pattern hot spot.
In the embodiment of the present invention, step S302 may specifically be to perform mask rule check or lithography rule check on the corrected mask pattern, wherein a target region of the mask pattern may be selected as an inspection object, and as an example, a region including the first oblique line segment 211, the second oblique line segment 221, and the third pattern 23 may be selected as a target region, so as to detect whether the correction of the target region of the mask pattern is achieved. The mask rule check or the lithography rule check may be performed by methods known in the art, and are not described herein for brevity.
In step S303, the mask pattern may be corrected in the same manner as in step S301, and further, the mask pattern after the secondary correction may be subjected to a rule check until the target area in the mask pattern has no defect, so that the mask pattern is corrected.
The mask pattern correction method provided above for the embodiment of the present invention includes at least the first pattern 21, the second pattern 22, and the third pattern 23, where the third pattern 23 is disposed between the first pattern 21 and the second pattern 22, and on a side close to the third pattern 23, an outline of the first pattern 21 includes a first oblique line segment 211, a first straight line segment 212 and a second straight line segment 213 respectively connected to both ends of the first oblique line segment 211, and the first straight line segment 212 and the second straight line segment are parallel 213; the outline of the second pattern 22 includes a second oblique line segment 221, a third straight line segment 222 and a fourth straight line segment 223 respectively connected to two ends of the second oblique line segment 221, and a mask pattern in which the third straight line segment 222 and the fourth straight line segment 223 are parallel, and the mask pattern can be corrected by adjusting a first included angle between the first oblique line segment 211 and the first straight line segment 212 and a second included angle between the second oblique line segment 221 and the third straight line segment 222, so that a defect of bridging at positions between the first oblique line segment 211, the second oblique line segment 221 and the third pattern 23 is avoided. In addition, whether the correction of the mask pattern is realized can be verified through the rule check of the corrected mask pattern, so that the defect in the mask pattern can be effectively avoided, and the accurate circuit layout pattern can be formed.
The above provides a mask pattern correction method according to an embodiment of the present invention, and in addition, the present invention provides another mask pattern correction method, which is specifically described in the following second embodiment.
Example two
It should be noted that, in the second embodiment of the present invention, the same mask pattern as that shown in fig. 2 in the first embodiment may be corrected.
Referring to fig. 8, fig. 8 is a schematic flow chart illustrating a mask pattern correction method according to a second embodiment of the present invention, including:
step S801: the correction of the mask pattern is achieved by adjusting a first distance from an intersection of the first oblique line segment 211 and the first straight line segment 212 to the third pattern 23 and a second distance from an intersection of the second oblique line segment 221 and the third straight line segment 222 to the third pattern 23.
In some embodiments, adjusting a first distance from an intersection of the first oblique line segment 211 and the first straight line segment 212 to the third pattern 23 and a second distance from an intersection of the second oblique line segment 221 and the third straight line segment 222 to the third pattern 23 enables correction of the mask pattern, including:
increasing the first distance to adjust the first distance from the intersection of the first diagonal line segment 211 and the first straight line segment 212 to the third pattern 23 to a third distance, the third distance being at least twice the first distance; and the number of the first and second groups,
the second distance is increased to adjust a second distance from the intersection of the second oblique line segment 221 and the third straight line segment 222 to the third pattern 23 to a fourth distance, which is at least twice the second distance.
Specifically, referring to fig. 9, fig. 9 is a schematic diagram illustrating a corrected mask pattern according to a second embodiment of the present invention. Before adjustment, a first distance from the intersection of the first oblique line segment 211 and the first straight line segment 212 to the third pattern 23 may be represented as L1A second distance from the intersection of the second oblique line segment 221 and the third straight line segment 222 to the third pattern 23 may be represented as L2(ii) a After adjustment, a third distance from the intersection of the first oblique line segment 211 and the first straight line segment 212 to the third pattern 23 may be represented as L3A fourth distance from the intersection of the second oblique line segment 221 and the third straight line segment 222 to the third pattern 23 may be represented as L4And has L3≥2L1，L4≥2L2。
In other embodiments, adjusting a first distance from an intersection of the first oblique line segment 211 and the first straight line segment 212 to the third pattern 23 and a second distance from an intersection of the second oblique line segment 221 and the third straight line segment 222 to the third pattern 23 realizes the correction of the mask pattern, including:
increasing the first distance to adjust the first distance from the intersection point of the first oblique line segment 211 and the first straight line segment 212 to the third pattern 23 to a third distance, wherein the third distance is at least 1.5 times of the distance from the second straight line segment to the third pattern; and the number of the first and second groups,
the second distance is increased to adjust the second distance from the intersection of the second oblique line segment 221 and the third straight line segment 222 to the third pattern 23 to a fourth distance, which is at least 1.5 times the distance from the fourth straight line segment to the third pattern.
Specifically, referring to fig. 10, fig. 10 shows another schematic diagram of providing another mask pattern according to the second embodiment of the present invention, before adjustment, a first distance from an intersection of the first diagonal line segment 211 and the first straight line segment 212 to the third pattern 23 may be represented as L1Second oblique line segmentA second distance from the intersection of 221 and the third straight line segment 222 to the third pattern 23 may be represented as L2(ii) a After adjustment, a third distance from the intersection of the first oblique line segment 211 and the first straight line segment 212 to the third pattern 23 may be represented as L3A fourth distance from the intersection of the second oblique line segment 221 and the third straight line segment 222 to the third pattern 23 may be represented as L4The distance from the second straight line segment to the third pattern can be represented as L5The distance from the fourth straight line segment to the third pattern is L6And has L3>1.5L5，L4>1.5L6。
In some embodiments, increasing the first distance and the second distance to adjust the first distance from the intersection of the first oblique line segment 211 and the first straight line segment 212 to the third distance of the third pattern 23 and the second distance from the intersection of the second oblique line segment 221 and the third straight line segment 222 to the third distance of the third pattern 23 comprises:
increasing the first distance and the second distance to adjust the first distance from the intersection of the first oblique line 211 and the first straight line 212 to the third pattern 23 to a third distance and the second distance from the intersection of the second oblique line 221 and the third straight line 222 to the third pattern 23 to a fourth distance, so that the third distance from the intersection of the first oblique line 211 and the first straight line 212 to the third pattern 23 after adjustment is equal to the fourth distance from the intersection of the second oblique line 221 and the third straight line 222 to the third pattern 23, i.e., L3＝L4. When the mask pattern before adjustment is such that the first pattern 21 and the second pattern 22 are symmetrically arranged along the central axis direction of the third pattern 23, by increasing the first distance from the intersection of the first oblique line segment 211 and the first straight line segment 212 to the third pattern 23 and the second distance from the intersection of the second oblique line segment 221 and the third straight line segment 222 to the third pattern 23, and making the first distance from the intersection of the first oblique line segment 211 and the first straight line segment 212 to the third pattern 23 after adjustment equal to the second distance from the intersection of the second oblique line segment 221 and the third straight line segment 222 to the third pattern 23, the mask pattern still having mirror symmetry along the central axis direction of the third pattern 23 can be obtained after adjustment and the first oblique line segment is enlargedThe spaces between the line segments 211, the second diagonal line segments 221, and the third pattern 23, so that it is possible to avoid a defect of bridging at a position between the first diagonal line segments 211, the second diagonal line segments 221, and the third pattern 23 in the mask pattern.
In other embodiments, referring to the schematic diagram of the mask pattern shown in fig. 5 in the first embodiment, on the side away from the third pattern 23, the outline of the first pattern 21 may include a first bent line segment, wherein the first bent line segment may include three line segments sequentially connected by a straight line segment, an oblique line segment, and another straight line segment, and the first bent line segment is parallel to a second bent line segment formed by sequentially connecting a first straight line segment 212, a first oblique line segment 211, and a second straight line segment 213; the outline of the second pattern 22 includes a third bent line segment, which may include three line segments sequentially connected by a straight line segment, an oblique line segment, and another straight line segment, and is parallel to a fourth bent line segment formed by sequentially connecting a third straight line segment 222, a second oblique line segment 221, and a fourth straight line segment 223.
After adjusting a first distance from an intersection of the first oblique line segment 211 and the first straight line segment 212 to the third pattern 23 and a second distance from an intersection of the second oblique line segment 221 and the third straight line segment 222 to the third pattern 23, the method may further include:
obtaining a first auxiliary pattern 61 by comparing the first pattern 21 before and after adjustment, and splicing the first auxiliary pattern 61 to the first bending line segment to form a fifth bending line segment, wherein the fifth bending line segment may include three line segments, namely a straight line segment, an oblique line segment and another straight line segment, which are connected in sequence, and in some embodiments, the fifth bending line segment is parallel to the adjusted second bending line segment; and obtaining a second auxiliary pattern 62 by comparing the second pattern 22 before and after adjustment, and splicing the second auxiliary pattern 62 to a third bending line segment to form a sixth bending line segment, wherein the sixth bending line segment may include three line segments, namely a straight line segment, an oblique line segment and another straight line segment, which are connected in sequence, and in some embodiments, the sixth bending line segment is parallel to the fourth bending line segment after adjustment. Specifically, refer to the schematic diagram of the corrected mask pattern shown in fig. 6 in the first embodiment. The first auxiliary pattern 61 is spliced to the first bent line segment to form a fifth bent line segment, so that the first pattern 21 with uniform line width can be obtained after adjustment; the second auxiliary pattern 62 is spliced to the third bending line segment to form a sixth bending line segment, which is beneficial to obtaining the second pattern 22 with uniform line width after adjustment, and can avoid the defect caused by the line width narrowing after adjustment.
In some embodiments, referring to fig. 11, fig. 11 is a schematic flow chart of another mask pattern correction method provided in the second embodiment of the present invention, which may include:
step S801: the correction of the mask pattern is achieved by adjusting a first distance from an intersection of the first oblique line segment 211 and the first straight line segment 212 to the third pattern 23 and a second distance from an intersection of the second oblique line segment 221 and the third straight line segment 222 to the third pattern 23.
Step S802: the corrected mask pattern is subjected to a rule check.
When the corrected mask pattern meets the inspection rule, namely the mask pattern is inspected to have no defects, the mask pattern used for the photoetching process can be output; when the corrected mask pattern does not meet the inspection rule, that is, when the pattern hot spot is detected at the target position of the mask pattern, step S803 may be further executed.
Step S803: and performing secondary correction on the corrected mask pattern in response to the signal of detecting the pattern hot spot.
In the embodiment of the present invention, step S802 may specifically be to perform mask rule check or lithography rule check on the corrected mask pattern, wherein a target region of the mask pattern may be selected as an inspection object, and as an example, a region including the first oblique line segment 211, the second oblique line segment 221, and the third pattern 23 may be selected as a target region, so as to detect whether the correction of the target region of the mask pattern is achieved. The mask rule check or the lithography rule check may be performed by methods known in the art, and are not described herein for brevity.
In step S803, the mask pattern may be corrected in the same manner as in step S801, and further, the mask pattern after the secondary correction may be subjected to a rule check until the target area in the mask pattern has no defect, so that the correction of the mask pattern is achieved.
The mask pattern correction method provided above for the embodiment of the present invention includes at least the first pattern 21, the second pattern 22, and the third pattern 23, where the third pattern 23 is disposed between the first pattern 21 and the second pattern 22, and on a side close to the third pattern 23, an outline of the first pattern 21 includes a first oblique line segment 211, a first straight line segment 212 and a second straight line segment 213 respectively connected to both ends of the first oblique line segment 211, and the first straight line segment 212 and the second straight line segment are parallel 213; the outline of the second pattern 22 includes a second oblique line segment 221, a third straight line segment 222 and a fourth straight line segment 223 respectively connected to both ends of the second oblique line segment 221, and a mask pattern in which the third straight line segment 222 and the fourth straight line segment 223 are parallel, and correction of the mask pattern can be achieved by adjusting a first distance from an intersection of the first oblique line segment 211 and the first straight line segment 212 to the third pattern 23 and a second distance from an intersection of the second oblique line segment 221 and the third straight line segment 222 to the third pattern 23, thereby avoiding a defect of bridging at a position between the first oblique line segment 211, the second oblique line segment 221, and the third pattern 23. In addition, whether the correction of the mask pattern is realized can be verified through the rule check of the corrected mask pattern, so that the defect in the mask pattern can be effectively avoided, and the accurate circuit layout pattern can be formed.
In another aspect of the present application, a storage medium is further provided, in which a computer program is stored, and when the computer program is executed by a processor, the mask pattern correction method described in the first embodiment or the second embodiment can be implemented.
Referring to fig. 12, fig. 12 is a schematic structural diagram of an apparatus provided in the embodiment of the present invention, where the apparatus includes a memory 121 and a processor 122, and the memory 121 stores therein a computer program, and when the computer program is executed by the processor, the mask pattern correction method described in the first embodiment or the second embodiment can be implemented.
Although the embodiments of the present invention have been described above, the above description is only for the convenience of understanding the present invention, and is not intended to limit the present invention. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (14)
1. A mask pattern correction method is characterized in that the mask pattern at least comprises a first pattern, a second pattern and a third pattern, the third pattern is arranged between the first pattern and the second pattern, one side close to the third pattern is provided with an outline of the first pattern, the outline comprises a first oblique line segment, a first straight line segment and a second straight line segment, the first straight line segment and the second straight line segment are respectively connected with two ends of the first oblique line segment, and the first straight line segment and the second straight line segment are parallel; the outline of the second pattern includes a second oblique line segment, and a third straight line segment and a fourth straight line segment respectively connected to both ends of the second oblique line segment, the third straight line segment and the fourth straight line segment being parallel, and the correction method includes:
and correcting the mask pattern by adjusting a first included angle between the first oblique line segment and the first straight line segment and a second included angle between the second oblique line segment and the third straight line segment.
2. The method of claim 1, wherein adjusting a first angle between the first diagonal line segment and the first straight line segment and a second angle between the second diagonal line segment and the third straight line segment to achieve the correction of the mask pattern comprises:
and increasing the first included angle and the second included angle so as to adjust the first included angle of the first oblique line segment and the first straight line segment to a third included angle and adjust the second included angle of the second oblique line segment and the second included angle of the third straight line segment to a fourth included angle to realize correction of the mask pattern.
3. The method according to claim 2, wherein the first pattern and the second pattern are symmetrically disposed along a central axis direction of the third pattern, the central axis of the third pattern being parallel to the first linear segment;
increasing the first included angle and the second included angle to adjust the first included angle of the first oblique line segment and the first straight line segment to a third included angle and adjust the second included angle of the second oblique line segment and the third straight line segment to a fourth included angle to realize correction of the mask pattern, including:
increasing the first included angle and the second included angle to adjust the first included angle of the first oblique line segment to the third included angle and the second oblique line segment to the second included angle of the third straight line segment to the fourth included angle, wherein the third included angle and the fourth included angle are equal.
4. The method of claim 1, wherein the contour of the first pattern includes a first bend line segment parallel to a second bend line segment formed by the sequential connection of the first straight line segment, the first diagonal line segment, and the second straight line segment on a side away from the third pattern; the contour of the second pattern comprises a third bent line segment, and the third bent line segment is parallel to a fourth bent line segment formed by sequentially connecting a third straight line segment, a second oblique line segment and a fourth straight line segment;
after adjusting a first included angle between the first oblique line segment and the first straight line segment and a second included angle between the second oblique line segment and the third straight line segment, the method further includes:
obtaining a first auxiliary pattern by comparing the first pattern before and after adjustment, and splicing the first auxiliary pattern to the first bending line segment to form a fifth bending line segment; and obtaining a second auxiliary pattern by comparing the second pattern before and after adjustment, and splicing the second auxiliary pattern to the third bent line segment to form a sixth bent line segment.
5. A mask pattern correction method is characterized in that the mask pattern at least comprises a first pattern, a second pattern and a third pattern, the third pattern is arranged between the first pattern and the second pattern, one side close to the third pattern is provided with an outline of the first pattern, the outline comprises a first oblique line segment, a first straight line segment and a second straight line segment, the first straight line segment and the second straight line segment are respectively connected with two ends of the first oblique line segment, and the first straight line segment and the second straight line segment are parallel; the outline of the second pattern includes a second oblique line segment, and a third straight line segment and a fourth straight line segment respectively connected to both ends of the second oblique line segment, the third straight line segment and the fourth straight line segment being parallel, and the correction method includes:
and correcting the mask pattern by adjusting a first distance from the intersection point of the first oblique line segment and the first straight line segment to the third pattern and a second distance from the intersection point of the second oblique line segment and the third straight line segment to the third pattern.
6. The method of claim 5, wherein adjusting a first distance from an intersection of the first diagonal line segment and the first straight line segment to the third pattern and a second distance from an intersection of the second diagonal line segment and the third straight line segment to the third pattern achieves correction of the mask pattern, comprising:
increasing the first distance to adjust the first distance from the intersection of the first diagonal line segment and the first straight line segment to the third pattern to a third distance, the third distance being at least twice the first distance; and the number of the first and second groups,
increasing the second distance to adjust the second distance from the intersection of the second diagonal line segment and the third straight line segment to the third pattern to a fourth distance that is at least twice the second distance.
7. The method of claim 5, wherein adjusting a first distance from an intersection of the first diagonal line segment and the first straight line segment to the third pattern and a second distance from an intersection of the second diagonal line segment and the third straight line segment to the third pattern achieves correction of the mask pattern, comprising:
increasing the first distance to adjust the first distance from the intersection of the first oblique line segment and the first straight line segment to the third pattern to a third distance, wherein the third distance is at least 1.5 times the distance from the second straight line segment to the third pattern; and the number of the first and second groups,
and increasing the second distance to adjust the second distance from the intersection point of the second oblique line segment and the third straight line segment to the third pattern to a fourth distance, wherein the fourth distance is at least 1.5 times of the distance from the fourth straight line segment to the third pattern.
8. The method according to claim 6 or 7, wherein the first pattern and the second pattern are symmetrically arranged along a central axis direction of the third pattern, the central axis of the third pattern being parallel to the first linear section;
increasing the first distance and the second distance to adjust the first distance from the intersection of the first diagonal line segment and the first straight line segment to the third pattern to a third distance and to adjust the second distance from the intersection of the second diagonal line segment and the third straight line segment to the third pattern to a fourth distance, comprising:
increasing the first distance and the second distance to adjust the first distance from the intersection of the first diagonal line segment and the first straight line segment to the third pattern to the third distance and to adjust the second distance from the intersection of the second diagonal line segment and the third straight line segment to the third pattern to a fourth distance, the third distance being equal to the fourth distance.
9. The method of claim 5, wherein the contour of the first pattern includes a first bend line segment parallel to a second bend line segment formed by the sequential connection of the first straight line segment, the first diagonal line segment, and the second straight line segment on a side away from the third pattern; the contour of the second pattern comprises a third bent line segment, and the third bent line segment is parallel to a fourth bent line segment formed by sequentially connecting a third straight line segment, a second oblique line segment and a fourth straight line segment;
after adjusting a first distance from an intersection of the first oblique line segment and the first straight line segment to the third pattern and a second distance from an intersection of the second oblique line segment and the third straight line segment to the third pattern, the method further includes:
obtaining a first auxiliary pattern by comparing the first pattern before and after adjustment, and splicing the first auxiliary pattern to the first bending line segment to form a fifth bending line segment; and obtaining a second auxiliary pattern by comparing the second pattern before and after adjustment, and splicing the second auxiliary pattern to the third bent line segment to form a sixth bent line segment.
10. The method according to claim 1 or 5, characterized in that the method further comprises: and carrying out rule check on the corrected mask pattern.
11. The method of claim 10, wherein the performing a rule check on the corrected mask pattern comprises: and carrying out mask rule check or photoetching rule check on the corrected mask pattern.
12. The method of claim 11, wherein after the lithography rule checking the corrected mask pattern, the method further comprises:
and performing secondary correction on the corrected mask pattern in response to a signal that the pattern hot spot is detected.
13. A storage medium, characterized in that a computer program is stored in the storage medium, which computer program, when executed by a processor, is capable of implementing the mask pattern correction method according to any one of claims 1 to 12.
14. An apparatus, characterized in that the apparatus comprises a memory and a processor, the memory having stored therein a computer program which, when executed by the processor, is capable of implementing the mask pattern correction method according to any one of claims 1 to 12.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110325288.XA CN113064322B (en) | 2021-03-26 | 2021-03-26 | Mask pattern correction method, storage medium and apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110325288.XA CN113064322B (en) | 2021-03-26 | 2021-03-26 | Mask pattern correction method, storage medium and apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113064322A true CN113064322A (en) | 2021-07-02 |
| CN113064322B CN113064322B (en) | 2023-06-02 |
Family
ID=76564052
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110325288.XA Active CN113064322B (en) | 2021-03-26 | 2021-03-26 | Mask pattern correction method, storage medium and apparatus |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113064322B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6243855B1 (en) * | 1997-09-30 | 2001-06-05 | Kabushiki Kaisha Toshiba | Mask data design method |
| US20090319970A1 (en) * | 2008-06-20 | 2009-12-24 | Hynix Semiconductor Inc. | Method for Correcting Layout with Pitch Change Section |
| CN103376643A (en) * | 2012-04-17 | 2013-10-30 | 中芯国际集成电路制造(上海)有限公司 | Method for correcting layout diagrams |
| CN104678694A (en) * | 2013-11-26 | 2015-06-03 | 中芯国际集成电路制造(上海)有限公司 | Layout correction method and device |
| CN110515267A (en) * | 2019-08-29 | 2019-11-29 | 上海华力微电子有限公司 | Domain modification method |
-
2021
- 2021-03-26 CN CN202110325288.XA patent/CN113064322B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6243855B1 (en) * | 1997-09-30 | 2001-06-05 | Kabushiki Kaisha Toshiba | Mask data design method |
| US20090319970A1 (en) * | 2008-06-20 | 2009-12-24 | Hynix Semiconductor Inc. | Method for Correcting Layout with Pitch Change Section |
| CN103376643A (en) * | 2012-04-17 | 2013-10-30 | 中芯国际集成电路制造(上海)有限公司 | Method for correcting layout diagrams |
| CN104678694A (en) * | 2013-11-26 | 2015-06-03 | 中芯国际集成电路制造(上海)有限公司 | Layout correction method and device |
| CN110515267A (en) * | 2019-08-29 | 2019-11-29 | 上海华力微电子有限公司 | Domain modification method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113064322B (en) | 2023-06-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8146025B2 (en) | Method for correcting layout pattern using rule checking rectangle | |
| CN107797375B (en) | Method for correcting target pattern | |
| US7972932B2 (en) | Mark forming method and method for manufacturing semiconductor device | |
| US20140331191A1 (en) | Method of correcting assist feature | |
| JP4165401B2 (en) | Mask pattern correction device, mask pattern correction method, mask manufacturing method, and semiconductor device manufacturing method | |
| US6482559B2 (en) | Method of optical proximity correction | |
| US7820346B2 (en) | Method for collecting optical proximity correction parameter | |
| KR20120100297A (en) | Flare correction method and method for fabricating euv(extreme ultra violet) mask | |
| US20150169820A1 (en) | Weak points auto-correction process for opc tape-out | |
| US20220317556A1 (en) | Optical proximity effect correction method and apparatus, device and medium | |
| CN105824187B (en) | Optical proximity correction method | |
| US20060115743A1 (en) | Reticle and method of fabricating semiconductor device | |
| CN112241102A (en) | Optical proximity correction, photomask manufacturing and imaging method | |
| TWI575308B (en) | Method of correcting assist features | |
| CN113064322B (en) | Mask pattern correction method, storage medium and apparatus | |
| US9904170B2 (en) | Reticle transmittance measurement method, projection exposure method using the same, and projection exposure device | |
| US8187773B2 (en) | Method for generating mask pattern data and method for manufacturing mask | |
| KR100577568B1 (en) | Method for measuring overlay and over mark used the same | |
| US7222327B2 (en) | Photo mask, method of manufacturing photo mask, and method of generating mask data | |
| US6638664B2 (en) | Optical mask correction method | |
| US10474026B2 (en) | Method for correcting bevel corners of a layout pattern | |
| CN113064321B (en) | Mask plate preparation method, storage medium and equipment | |
| CN113835302A (en) | Double patterning exposure method | |
| JP2004333942A (en) | Method for drawing pattern and method for manufacturing photomask | |
| JP3734450B2 (en) | Edge roughness analysis reticle and edge roughness analysis method using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |