CN113064321A - Mask plate preparation method, storage medium and equipment - Google Patents

Mask plate preparation method, storage medium and equipment Download PDF

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Publication number
CN113064321A
CN113064321A CN202110326741.9A CN202110326741A CN113064321A CN 113064321 A CN113064321 A CN 113064321A CN 202110326741 A CN202110326741 A CN 202110326741A CN 113064321 A CN113064321 A CN 113064321A
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pattern
line segment
distance
straight line
providing
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CN113064321B (en
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李福�
蔡丰年
谢翔宇
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Fujian Jinhua Integrated Circuit Co Ltd
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Fujian Jinhua Integrated Circuit Co Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses a preparation method of a mask plate, a storage medium and equipment, wherein a first pattern, a second pattern and a third pattern are provided, wherein the first pattern, the second pattern and the third pattern extend along a first direction and are arranged at intervals in a second direction; the method comprises the steps of providing a fourth pattern connected with a side frame parallel to the second direction in the first pattern and a fifth pattern connected with a side frame parallel to the second direction in the third pattern, wherein the outlines of the fourth pattern and the fifth pattern respectively comprise a diagonal line segment and a straight line segment, one end of the diagonal line segment is connected with the straight line segment, the other end of the diagonal line segment is connected with the first pattern or the third pattern, and the distance between the intersection point of the diagonal line segment and the straight line segment and the second pattern is larger than 1.5 times that of the distance between the second pattern and the corresponding pattern connected with the straight line segment.

Description

Mask plate preparation method, storage medium and equipment
Technical Field
The invention relates to the technical field of semiconductors, in particular to a preparation method of a mask plate, a storage medium and equipment.
Background
In the process of manufacturing a semiconductor device, a mask plate is usually designed according to a required circuit layout, and then a circuit layout pattern is transferred to a semiconductor substrate by using a photolithography process based on the mask plate.
As semiconductor devices are gradually miniaturized, an optical proximity effect is easily generated in a process of transferring a mask pattern to a photoresist layer using a photolithography process, thereby causing a defect of bridging or missing a target pattern formed on the photoresist layer. Among other things, the placement of the mask plate will greatly affect the accuracy of the circuit layout pattern formed on the semiconductor substrate.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: how to provide a preparation method of a mask plate to improve the accuracy of forming a circuit layout pattern on a substrate based on the mask plate.
In order to solve the technical problems, the invention provides a mask plate preparation method, a storage medium and equipment.
In a first aspect of the present invention, there is provided a method for manufacturing a mask blank, comprising:
providing a first pattern, a second pattern and a third pattern extending along a first direction, the first pattern, the second pattern and the third pattern being sequentially spaced apart in a second direction, the second direction being perpendicular to the first direction, the first pattern and the second pattern being spaced apart by a first distance, the second pattern and the third pattern being spaced apart by a second distance;
providing a fourth pattern, wherein the fourth pattern is connected with a side frame parallel to the second direction in the first pattern, the outline of the fourth pattern comprises a first oblique line segment and a first straight line segment, one end of the first oblique line segment is connected with the first straight line segment, the other end of the first oblique line segment is connected with the first pattern, and the third distance from the intersection point of the first oblique line segment and the first straight line segment to the second pattern is more than 1.5 times of the first distance;
providing a fifth pattern, wherein the fifth pattern and the fourth pattern are arranged at intervals, the fifth pattern is connected with a side frame parallel to the second direction in the third pattern, the outline of the fifth pattern comprises a second oblique line segment and a second straight line segment, one end of the second oblique line segment is connected with the second straight line segment, the other end of the second oblique line segment is connected with the third pattern, and the fourth distance from the intersection point of the second oblique line segment and the second straight line segment to the third pattern is greater than 1.5 times the second distance.
In some embodiments, the providing a first pattern, a second pattern, and a third pattern extending along a first direction, the first pattern, the second pattern, and the third pattern being sequentially spaced apart in a second direction, the second direction being perpendicular to the first direction, the first pattern and the second pattern being spaced apart by a first distance, the second pattern and the third pattern being spaced apart by a second distance, comprises:
providing the first pattern, the second pattern and the third pattern extending along the first direction, the first pattern, the second pattern and the third pattern being equally spaced apart in the second direction, the first distance being greater than or equal to a critical dimension.
In some embodiments, the providing the first pattern, the second pattern, and the third pattern extending in the first direction includes:
providing the first pattern, the second pattern and the third pattern extending along the first direction, wherein in the first direction, a frame of the first pattern on a side close to the fourth pattern is a fifth distance from a frame of the second pattern on a side close to the fourth pattern, and the fifth distance is equal to the first distance.
In some embodiments, the providing the first pattern, the second pattern, and the third pattern extending in the first direction includes:
providing the first pattern, the second pattern and the third pattern extending along the first direction, wherein in the first direction, a border of the third pattern on a side close to the fourth pattern is a sixth distance from a border of the second pattern on a side close to the fourth pattern, and the sixth distance is equal to the second distance.
In some embodiments, the providing a fourth pattern connected to a side frame of the first pattern parallel to the second direction, wherein an outline of the fourth pattern includes a first oblique line segment and a first straight line segment, one end of the first oblique line segment is connected to the first straight line segment, the other end of the first oblique line segment is connected to the first pattern, and a third distance between an intersection of the first oblique line segment and the first straight line segment and the second pattern is greater than 1.5 times the first distance, includes:
providing the fourth pattern, wherein the fourth pattern is connected with a side frame parallel to the second direction in the first pattern, an outline of the fourth pattern comprises the first oblique line segment and the first straight line segment, one end of the first oblique line segment is connected with the first straight line segment, the other end of the first oblique line segment is connected with the first pattern, and the third distance is equal to 2 times the first distance.
In some embodiments, providing a fifth pattern, the fifth pattern being spaced apart from the fourth pattern, the fifth pattern being connected to a side frame of the third pattern parallel to the second direction, wherein an outline of the fifth pattern includes a second oblique line segment and a second straight line segment, one end of the second oblique line segment being connected to the second straight line segment, the other end of the second oblique line segment being connected to the third pattern, and an intersection of the second oblique line segment and the second straight line segment being more than 1.5 times the second distance from the fourth distance of the third pattern, includes:
providing the fifth pattern, wherein the fifth pattern and the fourth pattern are arranged at intervals, the fifth pattern is connected with a side frame parallel to the second direction in the third pattern, the outline of the fourth pattern comprises a second oblique line segment and a second straight line segment, one end of the second oblique line segment is connected with the second straight line segment, the other end of the second oblique line segment is connected with the third pattern, and the fourth distance is equal to 2 times the second distance.
In some embodiments, the providing the fifth pattern comprises: providing the fifth pattern, the fifth pattern being symmetrically disposed with the fourth pattern based on a central axis of the second pattern.
In some embodiments, the providing a fifth pattern, the fifth pattern being spaced apart from the fourth pattern, comprises:
providing the fifth pattern, wherein a minimum spacing between the fifth pattern and the fourth pattern is equal to a critical dimension.
In some embodiments, the method further comprises: and carrying out photoetching rule detection on the mask plate.
In some embodiments, after the lithography rule detection is performed on the mask, the method for preparing the mask further includes:
and responding to the detected hot spot signal of the mask plate, performing optical proximity correction on the mask plate, and performing photoetching rule detection again.
In a second aspect of the present invention, there is provided a storage medium having a computer program stored therein, the computer program being capable of implementing the method for preparing a mask blank according to any one of the above aspects when executed by a processor.
In a third aspect of the present invention, there is provided an apparatus comprising a memory and a processor, wherein the memory stores a computer program, and the computer program can realize the method for preparing a reticle as described in any one of the above items when the computer program is executed by the processor.
Compared with the prior art, one or more embodiments in the above scheme can have the following advantages or beneficial effects:
by applying the preparation method of the mask plate, provided by the invention, the first pattern, the second pattern and the third pattern which extend along the first direction and are arranged at intervals in the second direction are provided; providing a fourth pattern connected with a side frame parallel to the second direction in the first pattern and a fifth pattern connected with a side frame parallel to the second direction in the third pattern, wherein the outlines of the fourth pattern and the fifth pattern respectively comprise a slash line segment and a straight line segment, one end of the slash line segment is connected with the straight line segment, the other end of the slash line segment is connected with the first pattern or the third pattern, and setting the interval between the second pattern and the corresponding pattern connected with the straight line segment, wherein the distance between the intersection point of the slash line segment and the straight line segment from the second pattern is greater than 1.5 times, so as to obtain a mask plate.
Drawings
The scope of the present disclosure may be better understood by reading the following detailed description of exemplary embodiments in conjunction with the accompanying drawings. Wherein the included drawings are:
fig. 1 shows a schematic flow chart of a method for manufacturing a mask plate according to an embodiment of the present invention;
fig. 2 shows a schematic structural diagram corresponding to step S101 provided in the embodiment of the present invention;
fig. 3 is a schematic diagram illustrating a mask structure according to an embodiment of the present invention;
fig. 4 shows a schematic structural diagram corresponding to step S101 provided in another embodiment of the present invention;
FIG. 5 is a schematic diagram of another mask structure provided in the embodiment of the present invention;
fig. 6 shows a schematic diagram of an apparatus provided by an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the following will describe in detail an implementation method of the present invention with reference to the accompanying drawings and embodiments, so that how to apply technical means to solve the technical problems and achieve the technical effects can be fully understood and implemented.
In the process of manufacturing a semiconductor device, a mask plate is usually designed according to a required circuit layout, and then a circuit layout pattern is transferred to a semiconductor substrate by using a photolithography process based on the mask plate.
As semiconductor devices are gradually miniaturized, an optical proximity effect is easily generated in a process of transferring a mask pattern to a photoresist layer using a photolithography process, thereby causing a defect of bridging or missing a target pattern formed on the photoresist layer. Among other things, the placement of the mask plate will greatly affect the accuracy of the circuit layout pattern formed on the semiconductor substrate.
In view of the above, the present invention provides a method for manufacturing a mask plate, by providing a first pattern, a second pattern and a third pattern extending in a first direction and arranged at an interval in a second direction; providing a fourth pattern connected with a side frame parallel to the second direction in the first pattern and a fifth pattern connected with a side frame parallel to the second direction in the third pattern, wherein the outlines of the fourth pattern and the fifth pattern respectively comprise a slash line segment and a straight line segment, one end of the slash line segment is connected with the straight line segment, the other end of the slash line segment is connected with the first pattern or the third pattern, and setting the interval between the second pattern and the corresponding pattern connected with the straight line segment, wherein the distance between the intersection point of the slash line segment and the straight line segment from the second pattern is greater than 1.5 times, so as to obtain a mask plate.
Referring to fig. 1, fig. 1 is a schematic flow chart of a method for manufacturing a mask blank according to an embodiment of the present invention, and the method includes:
step S101: first, second and third patterns 10, 11 and 12 extending in a first direction are provided, the first, second and third patterns 10, 11 and 12 are sequentially spaced in a second direction, the second direction is perpendicular to the first direction, the first and second patterns 10 and 11 are spaced apart by a first distance, and the second and third patterns 11 and 12 are spaced apart by a second distance.
Step S102: providing a fourth pattern 13, wherein the fourth pattern 13 is connected to a side frame parallel to the second direction in the first pattern 10, the outline of the fourth pattern 13 includes a first oblique line segment 131 and a first straight line segment 132, one end of the first oblique line segment 131 is connected to the first straight line segment 132, the other end of the first oblique line segment 131 is connected to the first pattern 10, and a third distance from an intersection of the first oblique line segment 131 and the first straight line segment 132 to the second pattern 11 is greater than 1.5 times the first distance.
Step S103: providing a fifth pattern 14, wherein the fifth pattern 14 and the fourth pattern 13 are arranged at intervals, the fifth pattern 14 is connected with a side frame parallel to the second direction in the third pattern 12, the outline of the fifth pattern 14 includes a second oblique line segment 141 and a second straight line segment 142, one end of the second oblique line segment 141 is connected with the second straight line segment 142, the other end of the second oblique line segment 141 is connected with the third pattern 12, and a fourth distance from an intersection point of the second oblique line segment 141 and the second straight line segment 142 to the third pattern 12 is greater than 1.5 times of a second distance.
In some embodiments, the step S101 may be embodied by providing the first pattern 10, the second pattern 11 and the third pattern 12 extending along the first direction, the first pattern 10, the second pattern 11 and the third pattern 12 being disposed at equal intervals in the second direction, and the first distance being greater than or equal to the critical dimension. Wherein the first distance may be represented as W1The second distance may be represented as W2I.e. can set W1＝W2. In other embodiments, the first distance W may also be set1And a second distance W2Not equal. In the embodiment of the present invention, the first pattern 10, the second pattern 11 and the third pattern 12 are arranged at equal intervals in the second direction, i.e., W1＝W2The following description is made for the sake of example.
In addition, in order to reduce defects caused by the optical proximity effect and obtain a mask plate meeting the small size requirement, the first distance and the second distance can be set to be equal to the critical dimension.
In the embodiment of the present invention, the first pattern 10, the second pattern 11, and the third pattern 12 may have the same shape, and in some embodiments, the first pattern 10, the second pattern 11, and the third pattern 12 may have the same rectangular shape, which is specifically shown in fig. 2, where fig. 2 shows a schematic structural diagram corresponding to step S101 provided in the embodiment of the present invention.
Referring to fig. 3, fig. 3 is a schematic diagram illustrating a mask plate structure according to an embodiment of the present invention. The fourth pattern 13 may further include a third oblique line segment and a third straight line segment, one end of the third oblique line segment is connected to the third straight line segment, the other end of the third oblique line segment is connected to the first pattern 10, and a bending line segment composed of the third oblique line segment and the third straight line segment is parallel to a folding line segment composed of the first oblique line segment 131 and the first straight line segment 132 in parallel. Wherein, an intersection point of the first oblique line segment 131 and the first straight line segment 132 is more than 1.5 times of the first distance from the second pattern 11 in the first direction, and the third distance may be represented as W3，W3﹥1.5W1。
In the embodiment of the present invention, the step S103 may specifically be to provide the fifth pattern 14, in the embodiment of the present invention, the fifth pattern 14 and the fourth pattern 13 are disposed on the same side of the second pattern 11, and in some embodiments, the fifth pattern 14 is disposed symmetrically with the fourth pattern 13 based on the central axis of the second pattern 11 along the first direction.
The fifth pattern 14 may further include a fourth oblique line segment and a fourth straight line segment, one end of the fourth oblique line segment is connected to the fourth straight line segment, the other end of the fourth oblique line segment is connected to the third pattern 12, and the bending line segment composed of the fourth oblique line segment and the fourth straight line segment is parallel to the folding line segment composed of the second oblique line segment 141 and the second straight line segment 142 in parallel. Wherein, an intersection point of the second oblique line segment 141 and the second straight line segment 142 is a fourth distance greater than 1.5 times from the third pattern 12 in the first direction, and the fourth distance may be represented as W4，W4﹥1.5W2。
In some embodiments, in order to avoid the defect of the target pattern due to the optical proximity effect, the fifth pattern 14 is provided, and the fifth pattern 14 and the fourth pattern 13 are spaced apart by: providing a fifth pattern 14, a fifth patternThe pattern 14 and the fourth pattern 13 are disposed on the same side of the second pattern 11, and the minimum interval between the fifth pattern 14 and the fourth pattern 13 in the second direction is equal to the critical dimension. Wherein the minimum interval between the fifth pattern 14 and the fourth pattern 13 may be W0The specific reference can be seen in fig. 3.
In other embodiments, step S101 may further include providing the first pattern 10, the second pattern 11, and the third pattern 12 extending along the first direction, where in the first direction, a border of the first pattern 10 near the fourth pattern 13 side, that is, a connection point of the first pattern 10 and the fourth pattern 13, is a fifth distance from a border of the second pattern 11 near the fourth pattern 13 side, and the fifth distance is equal to the first distance; and/or in the first direction, the border of the third pattern 12 close to the fourth pattern 13 side, that is, the connection point of the third pattern 12 and the fifth pattern 14, is a sixth distance from the border of the second pattern 11 close to the fourth pattern 13 side, and the sixth distance is equal to the second distance. The first pattern 10, the second pattern 11, and the third pattern 12 may be rectangles having different sizes in the first direction, which can be specifically referred to as fig. 4, where fig. 4 shows a schematic structural diagram corresponding to step S101 provided in another embodiment of the present invention. The fifth distance may be represented as W5The sixth distance may be represented as W6I.e. can be provided with W5＝W1And/or W6＝W2。
Referring to fig. 5, fig. 5 is a schematic diagram illustrating another mask structure provided by an embodiment of the present invention. In other embodiments, step S102 may further be specifically to provide a fourth pattern 13, where the fourth pattern 13 is connected to a side frame of the first pattern 10 parallel to the second direction, where an outline of the fourth pattern 13 includes a first oblique line segment 131 and a first straight line segment 132, one end of the first oblique line segment 131 is connected to the first straight line segment 132, the other end of the first oblique line segment 131 is connected to the first pattern 10, and a third distance between an intersection of the first oblique line segment 131 and the first straight line segment 132 in the first direction and the second pattern 11 is equal to 2 times the first distance, that is, W3＝2W1。
Step S103 may be embodied by providing a fifth pattern 14The fifth pattern 14 and the fourth pattern 13 are arranged at an interval, the fifth pattern 14 is connected with a side frame parallel to the second direction in the third pattern 12, wherein the outline of the fourth pattern 13 includes a second oblique line segment 141 and a second straight line segment 142, one end of the second oblique line segment 141 is connected with the second straight line segment 142, the other end of the second oblique line segment 141 is connected with the third pattern 12, a fourth distance between the intersection point of the second oblique line segment 141 and the second straight line segment 142 in the first direction and the third pattern 12 is equal to 2 times of a second distance, that is, W4＝2W2。
It should be noted that, in the embodiment of the present invention, step S102 and step S103 may be executed synchronously, or step S102 may be executed first and then step S103 is executed, and in the embodiment of the present invention, the order of step S102 and step S103 is not limited.
The mask plate preparation method provided by the embodiment of the invention comprises the steps of providing the first pattern 10, the second pattern 11 and the third pattern 12 which extend along the first direction and are arranged at intervals in the second direction; providing a fourth pattern 13 connected with a side frame parallel to the second direction in the first pattern 10 and a fifth pattern 14 connected with a side frame parallel to the second direction in the third pattern 12, wherein the outlines of the fourth pattern 13 and the fifth pattern 14 each comprise a diagonal line segment and a straight line segment, one end of the diagonal line segment is connected with the straight line segment, the other end of the diagonal line segment is connected with the first pattern 10 or the third pattern 12, and the distance between the intersection point of the diagonal line segment and the straight line segment and the second pattern 11 is greater than 1.5 times of the distance between the intersection point of the diagonal line segment and the straight line segment and the corresponding pattern connected with the straight line segment, so as to obtain a mask plate. In addition, by setting the first distance W1And a second distance W2Greater than or equal to the critical dimension, and the minimum spacing W between the fifth pattern 14 and the fourth pattern 130Equal to the critical dimension, can effectively avoid the defects caused by the optical proximity effect in the subsequent process of applying the mask plate, and improve the electricity formation on the substrate based on the mask plateAccuracy of the road layout pattern. And when the first distance, the second distance and the minimum interval are set to be equal to the critical dimension, the accuracy is met, and meanwhile, a mask plate with a smaller size can be obtained.
In order to verify the accuracy of the mask plate, after step S103, the following steps may also be performed:
step S104: and carrying out photoetching rule detection on the mask plate.
Step S105: and responding to the detected hot spot signal of the mask plate, performing optical proximity correction on the mask plate, and performing photoetching rule detection again.
In the embodiment of the present invention, step S104 may be to inspect the prepared mask plate by using a conventional lithography rule detection method in the art. When a hot signal is detected for the mask plate, that is, when defects such as bridging and the like are detected, the mask plate can be subjected to optical proximity correction and lithography rule detection again until the hot signal is eliminated.
Another aspect of the present invention further provides a storage medium, in which a computer program is stored, and when the computer program is executed by a processor, the method for preparing a mask blank according to the above embodiment can be implemented.
The processes, functions, methods, and/or software described above may be recorded, stored, or fixed in one or more computer-readable storage media that include program instructions to be implemented by a computer to cause a processor to execute the program instructions. The storage media may also include program instructions, data files, data structures, etc., alone or in combination. The storage media or program instructions may be those specially designed and understood by those skilled in the computer software arts, or they may be of the kind well known and available to those having skill in the computer software arts. Examples of computer readable media include: magnetic media such as hard disks, floppy disks, and magnetic tape; optical media, such as CDROM disks and DVDs; magneto-optical media, e.g., optical disks; and hardware devices specifically configured to store and execute program instructions, such as Read Only Memory (ROM), Random Access Memory (RAM), flash memory, and the like. Examples of program instructions include both machine code, such as produced by a compiler, and files containing higher level code that may be executed by the computer using an interpreter. The described hardware devices may be configured to act as one or more software modules to perform the operations and methods described above, and vice versa. In addition, computer readable storage media may be distributed over network coupled computer systems and may store and execute computer readable code or program instructions in a distributed fashion.
In another aspect of the present invention, an apparatus is further provided, and referring to fig. 6, fig. 6 shows a schematic diagram of an apparatus provided by an embodiment of the present invention.
The apparatus may comprise a memory 61 and a processor 62, the memory 61 having stored therein a computer program which, when executed by the processor, is capable of implementing the method of preparing a reticle as described in the above embodiments.
It should be noted that the device may include one or more memories 61 and processors 62, and the memories 61 and the processors 62 may be connected by a bus or other means. Memory 61, which is a non-volatile computer-readable storage medium, may be used to store non-volatile software programs, non-volatile computer-executable programs, and modules. The processor 62 executes various functional applications and data processing of the apparatus by running the nonvolatile software program, instructions, and modules stored in the memory, that is, implements the method for preparing a reticle as described above.
Although the embodiments of the present invention have been described above, the above description is only for the convenience of understanding the present invention, and is not intended to limit the present invention. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (12)

1. A preparation method of a mask plate is characterized by comprising the following steps:
providing a first pattern, a second pattern and a third pattern extending along a first direction, the first pattern, the second pattern and the third pattern being sequentially spaced apart in a second direction, the second direction being perpendicular to the first direction, the first pattern and the second pattern being spaced apart by a first distance, the second pattern and the third pattern being spaced apart by a second distance;
providing a fourth pattern, wherein the fourth pattern is connected with a side frame parallel to the second direction in the first pattern, the outline of the fourth pattern comprises a first oblique line segment and a first straight line segment, one end of the first oblique line segment is connected with the first straight line segment, the other end of the first oblique line segment is connected with the first pattern, and the third distance from the intersection point of the first oblique line segment and the first straight line segment to the second pattern is more than 1.5 times of the first distance;
providing a fifth pattern, wherein the fifth pattern and the fourth pattern are arranged at intervals, the fifth pattern is connected with a side frame parallel to the second direction in the third pattern, the outline of the fifth pattern comprises a second oblique line segment and a second straight line segment, one end of the second oblique line segment is connected with the second straight line segment, the other end of the second oblique line segment is connected with the third pattern, and the fourth distance from the intersection point of the second oblique line segment and the second straight line segment to the third pattern is greater than 1.5 times the second distance.
2. The method of claim 1, wherein the providing the first pattern, the second pattern, and the third pattern extending along a first direction, the first pattern, the second pattern, and the third pattern being sequentially spaced apart in a second direction, the second direction being perpendicular to the first direction, the first pattern and the second pattern being spaced apart by a first distance, the second pattern and the third pattern being spaced apart by a second distance, comprises:
providing the first pattern, the second pattern and the third pattern extending along the first direction, the first pattern, the second pattern and the third pattern being equally spaced apart in the second direction, the first distance being greater than or equal to a critical dimension.
3. The method of manufacturing according to claim 1 or 2, wherein the providing of the first pattern, the second pattern, and the third pattern extending in the first direction includes:
providing the first pattern, the second pattern and the third pattern extending along the first direction, wherein in the first direction, a frame of the first pattern on a side close to the fourth pattern is a fifth distance from a frame of the second pattern on a side close to the fourth pattern, and the fifth distance is equal to the first distance.
4. The method of manufacturing according to claim 1 or 2, wherein the providing of the first pattern, the second pattern, and the third pattern extending in the first direction includes:
providing the first pattern, the second pattern and the third pattern extending along the first direction, wherein in the first direction, a border of the third pattern on a side close to the fourth pattern is a sixth distance from a border of the second pattern on a side close to the fourth pattern, and the sixth distance is equal to the second distance.
5. The method of claim 3, wherein providing a fourth pattern connected to a side frame of the first pattern parallel to the second direction, wherein an outline of the fourth pattern comprises a first diagonal line segment and a first straight line segment, wherein one end of the first diagonal line segment is connected to the first straight line segment, wherein the other end of the first diagonal line segment is connected to the first pattern, and wherein an intersection of the first diagonal line segment and the first straight line segment is a third distance greater than 1.5 times the first distance from the second pattern comprises:
providing the fourth pattern, wherein the fourth pattern is connected with a side frame parallel to the second direction in the first pattern, an outline of the fourth pattern comprises the first oblique line segment and the first straight line segment, one end of the first oblique line segment is connected with the first straight line segment, the other end of the first oblique line segment is connected with the first pattern, and the third distance is equal to 2 times the first distance.
6. The method of claim 4, wherein providing a fifth pattern, the fifth pattern being spaced apart from the fourth pattern, the fifth pattern being connected to a side frame of the third pattern that is parallel to the second direction, wherein an outline of the fifth pattern includes a second diagonal line segment and a second straight line segment, one end of the second diagonal line segment being connected to the second straight line segment, the other end of the second diagonal line segment being connected to the third pattern, and an intersection of the second diagonal line segment and the second straight line segment being greater than 1.5 times the second distance from a fourth distance of the third pattern comprises:
providing the fifth pattern, wherein the fifth pattern and the fourth pattern are arranged at intervals, the fifth pattern is connected with a side frame parallel to the second direction in the third pattern, the outline of the fourth pattern comprises a second oblique line segment and a second straight line segment, one end of the second oblique line segment is connected with the second straight line segment, the other end of the second oblique line segment is connected with the third pattern, and the fourth distance is equal to 2 times the second distance.
7. The method of claim 1, wherein the providing a fifth pattern comprises: providing the fifth pattern, the fifth pattern being symmetrically disposed with the fourth pattern based on a central axis of the second pattern.
8. The method of claim 1, wherein said providing a fifth pattern, said fifth pattern being spaced apart from said fourth pattern, comprises:
providing the fifth pattern, wherein a minimum spacing between the fifth pattern and the fourth pattern is equal to a critical dimension.
9. The method of claim 1, further comprising: and carrying out photoetching rule detection on the mask plate.
10. The method of claim 9, wherein after the lithography rule inspection of the reticle, the method further comprises:
and responding to the detected hot spot signal of the mask plate, performing optical proximity correction on the mask plate, and performing photoetching rule detection again.
11. A storage medium, characterized in that a computer program is stored in the storage medium, which computer program, when executed by a processor, is capable of implementing the method for the preparation of a reticle as claimed in any one of the preceding claims 1 to 10.
12. An apparatus, characterized in that it comprises a memory and a processor, the memory having stored therein a computer program which, when executed by the processor, is capable of implementing a method for reticle preparation according to any one of the preceding claims 1 to 10.
CN202110326741.9A 2021-03-26 2021-03-26 Mask plate preparation method, storage medium and equipment Active CN113064321B (en)

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