CN113061990A - Cobalt oxide-based magnetic oxide thin film and preparation method and application thereof - Google Patents

Cobalt oxide-based magnetic oxide thin film and preparation method and application thereof Download PDF

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CN113061990A
CN113061990A CN202110289382.4A CN202110289382A CN113061990A CN 113061990 A CN113061990 A CN 113061990A CN 202110289382 A CN202110289382 A CN 202110289382A CN 113061990 A CN113061990 A CN 113061990A
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srcuo
lacoo
thin film
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金奎娟
郭尔佳
金桥
林珊
陈爽
陈盛如
祁明群
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    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/68—Crystals with laminate structure, e.g. "superlattices"
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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Abstract

The invention provides a cobalt oxide-based magnetic oxide film and a preparation method and application thereof3The second material layer is SrCuO2. The preparation method comprises the following steps: alternately depositing LaCoO on single crystal substrate by using pulsed laser deposition technology3Layer and SrCuO2A superlattice structure of layers. The method is simple to operate, high in repeatability and free of influence of external environment. Can prepare [ (LaCoO) with different compositions according to the requirements of devices3)m/(SrCuO2)n]pA superlattice structure. The invention provides an alternative for an optically pumped and current driven ultrathin spin orbit torque deviceA material.

Description

Cobalt oxide-based magnetic oxide thin film and preparation method and application thereof
Technical Field
The invention belongs to the technical field of microelectronics, and particularly relates to a cobalt oxide-based magnetic oxide film and a preparation method and application thereof.
Background
The ferromagnetic ultrathin quantum functional material with large area and compatibility with silicon-based semiconductor is especially important for developing next generation nanometer, even sub-nanometer size and high-performance spinning electronic devices. In recent years, researchers have successively discovered Fe3GeTe2And CrI3And so on, van der waals two-dimensional materials having both ferromagnetism and perpendicular magnetic anisotropy, and the research of low-dimensional magnetic materials has been hot. The transition metal oxide has the advantages of acid resistance, corrosion resistance, excellent thermal stability, good air stability, capability of being combined with a silicon semiconductor process and the like; meanwhile, the material has the characteristic of multi-degree-of-freedom strong correlation coupling, so that the material is very sensitive to various physical fields (electric fields, magnetic fields, optical fields and the like). Therefore, the transition metal oxide is an ideal material for next-generation high-sensitivity, low-power consumption and multifunctional electronic devices.
However, the key challenge faced by most of the current magnetic oxide thin films is that when their thickness is less than the critical thickness of the "magnetic dead layer" (about 4 to 5 cell layers), the ferromagnetic transition temperature of the thin film sample is drastically reduced, while its saturation magnetization is also greatly reduced, even if the magnetic properties are completely lost. The phenomenon fundamentally limits the application of the transition metal oxide ultrathin film in the micro-nano magnetic functional device.
Perovskite cobalt oxide (LaCoO)3) Has rich spin state conversion phenomenon. Although intrinsic bulk does not have long-range ordered spin alignment, LaCoO is under tensile stress applied by the substrate3The film exhibits anomalous ferromagnetic insulation properties.
In recent two years, researchers have realized LaCoO using the in-plane two-fold rotational symmetry of surface steps of single crystal substrates3The film quasi-one-dimensional ferroelastic structure and the magnetic anisotropy are accurately regulated, and the magnetic change caused by reversible lattice distortion is researched through a polarized neutron reflection spectrum. Then the research team explores LaCoO under the action of different film thicknesses and different epitaxial stresses3The nonlinear regulation effect of the thin film orbital order and spin state on the macroscopic magnetism.
Disclosure of Invention
The invention aims to provide a single cell layer LaCoO based on a superlattice structure aiming at the problem that the single cell layer is weakened or even disappears in magnetism3A film and a preparation method and application thereof.
The invention provides a cobalt oxide-based magnetic oxide film, which consists of a superlattice structure formed by alternately growing a first material layer and a second material layer, wherein the first material layer is LaCoO3The second material layer is SrCuO2。
According to the magnetic oxide thin film provided by the invention, the thickness of the first material layer can be 0.4-10 nm, preferably 0.4-5 nm, and more preferably 0.4-1 nm; the thickness of the second material layer can be 0.4-10 nm, preferably 0.4-5 nm, and more preferably 0.4-1 nm.
In the magnetic oxide thin film provided by the invention, the superlattice structure can comprise a plurality of superlattice periods, and each superlattice period comprises a first material layer and a second material layer which are adjacently arranged. The number of the superlattice periods is not particularly limited in the present invention, and any number of superlattice periods may be set as required, for example, 1to 100, such as 1, 2, 3, 5, 10, 15, 20, 50, and the like.
In the magnetic oxide thin film provided by the present invention, the plurality of superlattice periods includes a first superlattice period, a second superlattice period, and … … P-th superlattice period (P is an integer greater than 2); wherein the thickness of the first material layer of the first superlattice period, the thickness of the first material layer of the second superlattice period, and the thickness of the first material layer of the … … P-th superlattice period may be the same or different, and the thickness of the second material layer of the first superlattice period, the thickness of the second material layer of the second superlattice period, and the thickness of the second material layer of the … … P-th superlattice period may be the same or different.
According to the magnetic oxide thin film provided by the present invention, preferably, the magnetic oxide thin film is grown on a single crystal substrate, which may be selected from, but not limited to: strontium titanate (SrTiO)3) Lanthanum strontium aluminum tantalum oxygen [ (La, Sr) (Al, Ta) O3]Lanthanum aluminate (LaAlO)3) Neodymium gallate (NdGaO)3) Dysprosium scandate (DyScO)3) Isolattice constant and LaCoO3Or SrCuO2A close monocrystalline substrate.
The magnetic oxide thin film provided by the present invention can be expressed as: [ (LaCoO)3)m/(SrCuO2)n]pWherein m is LaCoO3The number of original cell layers of the film is SrCuO2The number of primitive cell layers of the film, and p is the number of superlattice periods. Wherein LaCoO in each superlattice period3Layer and SrCuO2The number of primitive cell layers, namely the values of m and n, can be as thin as the thickness of a single primitive cell layer (0.4 nm) and as thick as dozens or even hundreds of primitive cell layers (more than 10 nm).
The invention also provides a preparation method of the magnetic oxide film, which comprises the following steps: in the form of bulk LaCoO3And SrCuO2Alternately depositing LaCoO on the single crystal substrate by Pulsed Laser Deposition (PLD) as target3And SrCuO2Form by LaCoO3Layer and SrCuO2A superlattice structure of layers.
FIG. 1 is a schematic diagram of a process for preparing the magnetic oxide thin film. Wherein, Sub is a substrate; LCO1 LaCoO of first period3A layer; SrCuO with SCO1 as first period2A layer; LCO2 is LaCoO of second period3A layer; SCO2 is SrCuO for second period2A layer; LCOp is SrCuO of p period2And (3) a layer.
Wherein the target material can be purchased or purchasedCan be made by self. With LaCoO3The target preparation process is briefly described for the example: fully mixing cobalt oxide (CoO) powder and lanthanum oxide (LaO) powder, presintering at high temperature, pressing into a cylindrical target material, applying high temperature and high pressure again for secondary sintering, and naturally cooling to room temperature to obtain blocky LaCoO3Target material (also referred to herein as LaCoO)3Ceramic).
According to the preparation method provided by the invention, the deposition temperature can be 500-800 ℃. In a preferred embodiment, the oxygen partial pressure during deposition is 0.001 to 1 Torr. In a preferred embodiment, the pulsed laser deposition has a laser energy density of 0.5 to 3J/cm2. In a preferred embodiment, the laser frequency of the pulsed laser deposition is 2-10 Hz.
In a preferred embodiment, the heating rate and the cooling rate in the deposition process are respectively 5-20 ℃/min; preferably, the oxygen partial pressure during the temperature rise and fall is 0.001 to 1 Torr.
According to the preparation method provided by the invention, the LaCoO in the superlattice structure is controlled by the number of laser pulses and the partial pressure of growing oxygen3And SrCuO2The thickness of the layer. At a fixed oxygen partial pressure, the film thickness is linear with the number of laser pulses.
The invention also provides the application of the magnetic oxide film in an optical pumping and current driving ultrathin spin orbit torque device.
The magnetic oxide film of the present invention has the following beneficial effects:
(1) prepared by the invention [ (LaCoO)3)m/(SrCuO2)n]pThe superlattice structure has high crystal quality and stable chemical component proportion. The preparation process is relatively simple, the pulse laser deposition technology is utilized, the controllability is strong, the repetition rate is high, and the influence of the external environment (such as temperature, humidity, oxygen and the like) is avoided.
(2) By controlling the number of laser pulses, [ (LaCoO) can be accurately controlled3)m/(SrCuO2)n]pThe number of superlattice protocell layers, i.e., m and n, is as thin as a single protocell layer (e.g., E)0.4nm) and as thick as tens or even hundreds of protolayers (e.g., 5nm or more). At the same time, the superlattice structure still has excellent quality.
(3) By controlling the number of laser pulses, [ (LaCoO) can be accurately controlled3)m/(SrCuO2)n]pThe number of repeating cycles of the superlattice, i.e., the p-value, further enhances the magnetic properties produced by the interface effect.
(4) Prepared [ (LaCoO)3)m/(SrCuO2)n]pThe superlattice structure realizes LaCoO3The ultrathin film with the single cell layer thickness (0.4 nm), the strong magnetism (0.5 muB/Co) and the high Curie temperature (75K) breaks through the bottleneck that the magnetic oxide of the single cell layer is difficult to be applied in a functional device.
(5) Can be prepared on substrates of different materials and still keeps good crystallinity.
Drawings
Embodiments of the invention are described in detail below with reference to the attached drawing figures, wherein:
FIG. 1 is a schematic flow chart of the preparation of a magnetic oxide thin film according to the present invention;
FIG. 2 shows a single cell layer-containing LaCoO prepared in example 1 of the present invention3[ (LaCoO)3)1/(SrCuO2)8]15High resolution transmission electron microscopy of the superlattice structure (right side), and corresponding schematic representation of the superlattice structure (left side);
FIG. 3 shows [ (LaCoO) obtained in example 2 of the present invention3)5/(SrCuO2)n]15In the superlattice structure, when SrCuO2The variation relation graph of magnetic moment-magnetic field intensity when the thickness varies from 1to 20 primitive cell layers;
FIG. 4 shows [ (LaCoO) obtained in example 2 of the present invention3)5/(SrCuO2)n]15In the superlattice structure, when SrCuO2The variation relation graph of magnetic moment-temperature when the thickness varies from 1to 20 primitive cell layers;
FIG. 5 shows a single cell layer-containing LaCoO prepared in example 2 of the present invention3[ (LaCoO)3)m/(SrCuO2)n]15In the superlattice structure, when m is 1, 3 and 5, SrCuO2The out-of-plane lattice constant, saturation magnetization and coercive field vary with SrCuO when the cell layer thickness varies from 1to 202A graph of the variation of thickness;
FIG. 6 shows [ (LaCoO) obtained in example 2 of the present invention3)3/(SrCuO2)3]15A high-resolution scanning transmission electron microscope image (left side) of the superlattice structure in a ring field light phase mode and a corresponding change image (right side) of an M-O-M bond angle along with the thickness of a primitive cell layer;
FIG. 7 shows [ (LaCoO) obtained in example 2 of the present invention3)3/(SrCuO2)8]15A high-resolution scanning transmission electron microscope image (left side) of the superlattice structure in a ring field light phase mode and a corresponding change image (right side) of an M-O-M bond angle along with the thickness of a primitive cell layer;
FIG. 8 is a schematic diagram of reversible transition of cobalt ion in low, medium and high spin states;
FIG. 9 shows a single cell layer [ (LaCoO) obtained in example 3 of the present invention3)1/(SrCuO2)1]15High resolution transmission electron microscopy images of superlattice structures;
FIG. 10 shows a single cell layer [ (LaCoO) obtained in example 3 of the present invention3)1/(SrCuO2)1]15Element-resolved electron energy loss spectra (top) and electron microscope intensity distribution profiles (bottom) of superlattice structures;
FIG. 11 shows a single cell layer [ (LaCoO) obtained in example 3 of the present invention3)1/(SrCuO2)1]15The superlattice structure has a magnetic moment-magnetic field strength variation curve (upper graph) and a magnetic moment-temperature variation curve (lower graph).
Detailed Description
The present invention is described in further detail below with reference to specific embodiments, which are given for the purpose of illustration only and are not intended to limit the scope of the invention.
LaCoO in the following examples3Layer and SrCuO2The layer formation method is as follows:
(1)mixing LaCoO3And SrCuO2Placing the target material at the target material position in the PLD system, and placing SrTiO3The substrate is arranged at a substrate position in the system;
(2) operating PLD vacuum system, starting mechanical pump and molecular pump to make vacuum degree of cavity be as low as 5X 10-6Torr；
(3) Introducing oxygen into the vacuum system, and adjusting a gate valve between the molecular pump and the vacuum cavity until the oxygen partial pressure is 0.001-1Heating to 500-700 ℃ while Torr, and keeping for more than 5 minutes;
(4) turning on a laser, adjusting the laser energy to be 50-300 mJ and the frequency to be 2-5 Hz, and adjusting the laser energy and the frequency value until a bright and uniform plasma plume is obtained;
(5) opening a heater baffle, controlling the number of laser pulses to be 2000-5000, and preparing an epitaxial film;
(6) cooling to room temperature to obtain high-quality LaCoO3(LCO) film and SrCuO2(SCO) thin film.
Example 1
This example prepares LaCoO in each superlattice period3The number of primitive cell layers is 1, SrCuO2Magnetic oxide thin film (denoted as L) with primitive cell layer number of 81S8)。
According to the method, the first layer of LaCoO with the protocell layer number of 1 is prepared on the substrate3Film, preparing the first SrCuO layer with the primitive cell layer number of 82Thin film, obtaining the first superlattice period, repeating the above steps until fifteen superlattice periods are reached to obtain [ (LaCoO)3)1/(SrCuO2)8]15A superlattice structure.
FIG. 2 shows a single cell layer-containing LaCoO prepared in this example3[ (LaCoO)3)1/(SrCuO2)8]15A high resolution transmission electron micrograph of the superlattice structure (right side) and a corresponding schematic representation of the superlattice structure (left side). The high resolution transmission electron microscope shows that the La, Co, Sr and Cu atoms are arranged regularly, the film interface is very flat, and the superlattice structure has good junctionsCrystal quality, and coherent growth.
Example 2
This example prepares LaCoO in each superlattice period3The number of primitive cell layers is 5, SrCuO2Magnetic oxide films (denoted as L) with different primitive cell layers5Sn) LaCoO in each superlattice period3The number of primitive cell layers is 3, SrCuO2Magnetic oxide films (denoted as L) with different primitive cell layers3Sn) And LaCoO in each superlattice period3The number of primitive cell layers is 1, SrCuO2Magnetic oxide films (denoted as L) with different primitive cell layers1Sn)。
According to the method, by controlling the number of laser pulses, first layer LaCoO with protocell layer number of 1, 3 or 5 is prepared on the substrate3Film, preparing a first SrCuO layer with primitive cell layers of 1, 2, 3, 4, 5, 7, 10 or 20 respectively2Thin film, obtaining the first superlattice period, repeating the above steps until fifteen superlattice periods, and preparing [ (LaCoO)3)m/(SrCuO2)n]15( m 1, 3 or 5, n 1, 2, 3, 4, 5, 7, 10 or 20). And is prepared from [ (LaCoO)3)3/(SrCuO2)8]15A magnetic oxide film composed of a superlattice structure.
FIG. 3 shows [ (LaCoO) produced in this example3)5/(SrCuO2)n]15In the superlattice structure, when SrCuO2The variation of magnetic moment-magnetic field intensity when the thickness is changed from 1to 20 primitive cell layers is shown in the graph. FIG. 4 shows [ (LaCoO) produced in this example3)5/(SrCuO2)n]15In the superlattice structure, when SrCuO2The thickness of the cell layer is from 1to 20, and the variation of the magnetic moment-temperature is shown.
As can be seen from FIGS. 3, 4 and 5, SrCuO was changed2The thickness and the magnetism of the magnetic material are obviously changed. SrCuO2When the layer thickness is below 5 primitive cell layers, the superlattice presents typical ferromagnetism; with SrCuO2Increase in layer thickness, superlatticeThe magnetic properties are drastically reduced. The ring field bright phase mode of the scanning transmission electron microscope accurately observes the positions of different atoms in the superlattice with different periods, and the change rule of the bond length and the bond angle of the cobalt-oxygen octahedron is determined, as shown in fig. 6 and 7. FIG. 8 is a schematic diagram of reversible transition of cobalt ions in low, medium and high spin states. FIG. 8 shows that SrCuO2Before and after the structural phase change, the cobalt-oxygen-cobalt bond angle is increased from 168 degrees to 180 degrees, and the cobalt-oxygen bond length is increased by about 1.1 percent. These small changes in the oxygen octahedral parameters will result in an increase in the difference between the lattice field energy and the exchange energy, altering the electron at t2gAnd egThe distribution in energy levels, resulting in the conversion of cobalt ions from a low to a high spin state, promotes long range ordered electron spin alignment.
The reason why the above-mentioned effect is generated is due to SrCuO2CuO occurs when the thickness is reduced to 5 cell layers2Atomic configuration change from horizontal to vertical of the copper oxygen plane accompanied by an out-of-plane lattice constant change from horizontal to vertical
Figure BDA0002981826930000061
Is increased to
Figure BDA0002981826930000062
The lattice stretches more than 10%.
Example 3
The preparation of the single cell layer ferromagnetic cobalt oxide magnetic film in this example shows that the control of the number of laser pulses in the film preparation process can realize the control of the LaCoO3Modulation of the thickness of the cell layer film.
The thickness of the prepared film is accurately obtained through X-ray reflection test, the number of laser pulses in the film preparation process is obtained through timing, so that the relation between the film thickness and the number of pulses is obtained, and the relation is obtained through data processing and is linearly related. The method determines that under the experimental conditions, about 30-60 pulses can prepare the LaCoO with the thickness of the single cell layer3The film (the specific value is influenced by parameters such as oxygen partial pressure, substrate temperature, laser energy and the like in the growth process).
High resolution transmission electron microscopy images, elemental resolutionShown by the sub-energy loss spectrum and the intensity distribution diagram of an electron microscope, the [ (LaCoO) prepared in this example3)1/(SrCuO2)1]15The single cell layer superlattice exhibits excellent crystallinity as shown in fig. 9 and 10.
FIG. 11 shows a single cell layer [ (LaCoO) obtained in this example3)1/(SrCuO2)1]15The superlattice structure has a magnetic moment-magnetic field strength variation curve (upper graph) and a magnetic moment-temperature variation curve (lower graph). As can be seen from FIG. 11, a single cell layer LaCoO3Compared with other single cell layer magnetic oxides, the saturation magnetization and Curie temperature of the single cell layer magnetic oxide material are greatly improved. Meanwhile, the magnetic field is perpendicular to the surface of the sample and the magnetic field is parallel to the surface of the sample to show different magnetic transport properties, which shows that the material also shows strong magnetic anisotropy similar to a magnetic two-dimensional material, and provides a candidate material for an optical pumping and current driving ultrathin spin orbit torque device.

Claims (10)

1. A cobalt oxide-based magnetic oxide thin film is composed of a superlattice structure formed by alternately growing a first material layer and a second material layer, wherein the first material layer is LaCoO3The second material layer is SrCuO2。
2. The magnetic oxide thin film according to claim 1, wherein the thickness of the first material layer is 0.4 to 10nm, preferably 0.4 to 5nm, and more preferably 0.4 to 1 nm; the thickness of the second material layer is 0.4-10 nm, preferably 0.4-5 nm, and more preferably 0.4-1 nm.
3. The magnetic oxide thin film according to claim 1 or 2, wherein the magnetic oxide thin film is grown on a single crystal substrate, preferably the single crystal substrate is selected from one of strontium titanate, lanthanum strontium aluminum tantalum oxide, lanthanum aluminate, neodymium gallate and dysprosium scandate.
4. Method for producing magnetic oxide thin film according to any one of claims 1to 3A method of making, comprising: in the form of bulk LaCoO3And SrCuO2As target material, alternately depositing LaCoO on single crystal substrate by using pulsed laser deposition technology3And SrCuO2Form by LaCoO3Layer and SrCuO2A superlattice structure of layers.
5. A production method according to claim 4, wherein the temperature of the deposition is 500 to 800 ℃.
6. The method of claim 4, wherein the oxygen partial pressure during the deposition is 0.001 to 1 Torr.
7. The method according to claim 4, wherein the pulsed laser deposition has a laser energy density of 0.5 to 3J/cm2Preferably, the laser frequency of the pulsed laser deposition is 2-10 Hz.
8. The preparation method according to claim 4, wherein the heating and cooling rates in the deposition process are respectively 5-20 ℃/min; preferably, the oxygen partial pressure during the temperature rise and fall is 0.001 to 1 Torr.
9. The method of claim 4 wherein the amount of LaCoO in the superlattice structure is controlled by the number of laser pulses and the partial pressure of oxygen during growth3And SrCuO2The thickness of the layer.
10. Use of the magnetic oxide thin film of any one of claims 1to 3 in optically pumped and current driven ultra thin spin orbit torque devices.
CN202110289382.4A 2021-03-18 2021-03-18 Cobalt oxide-based magnetic oxide thin film and preparation method and application thereof Pending CN113061990A (en)

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Publication number Priority date Publication date Assignee Title
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US20130177995A1 (en) * 2010-06-04 2013-07-11 Board Of Regents Of The University Of Texas System Highly epitaxial thin films for high temperature/highly sensitive chemical sensors for critical and reducing environment
CN110527952A (en) * 2019-07-26 2019-12-03 沈阳工业大学 A kind of barium titanate/nickel acid lanthanum ferroelectric superlattice material and preparation method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101256869A (en) * 2007-12-20 2008-09-03 山东大学 Oxidate magnetic semiconductor thin film capable of regulating electric transport property and method of preparing the same
US20130177995A1 (en) * 2010-06-04 2013-07-11 Board Of Regents Of The University Of Texas System Highly epitaxial thin films for high temperature/highly sensitive chemical sensors for critical and reducing environment
CN110527952A (en) * 2019-07-26 2019-12-03 沈阳工业大学 A kind of barium titanate/nickel acid lanthanum ferroelectric superlattice material and preparation method thereof

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Title
SMADICI,S.等: "Distinct oxygen hole doping in different layers of Sr2CuO4-delta/La2CuO4 superlattices", 《PHYSICAL REVIEW B》 *
中科院物理研究所: "单细胞层强磁性钴氧化物超薄膜的实现", 《HTTPS://BAIJIAHAO.BAIDU.COM/S?ID=1686301518686611858&WFR=SPIDER&FOR=PC》 *

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