CN113061025A - Lead-free bismuth sodium titanate-based X9R type ceramic capacitor material and preparation method thereof - Google Patents
Lead-free bismuth sodium titanate-based X9R type ceramic capacitor material and preparation method thereof Download PDFInfo
- Publication number
- CN113061025A CN113061025A CN202110555550.XA CN202110555550A CN113061025A CN 113061025 A CN113061025 A CN 113061025A CN 202110555550 A CN202110555550 A CN 202110555550A CN 113061025 A CN113061025 A CN 113061025A
- Authority
- CN
- China
- Prior art keywords
- ceramic capacitor
- lead
- ceramic
- sodium titanate
- bismuth sodium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/475—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on bismuth titanates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
- C04B35/638—Removal thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3201—Alkali metal oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3215—Barium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3232—Titanium oxides or titanates, e.g. rutile or anatase
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3251—Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6562—Heating rate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6567—Treatment time
Abstract
The invention discloses a lead-free bismuth sodium titanate-based X9R type ceramic capacitor material and a preparation method thereof, belonging to the technical field of electronic ceramic application. The chemical formula is 0.7(0.94 Na)0.5Bi0.5TiO3‑0.06BaTiO3)‑0.3KTaO3The preparation method is to take TiO2﹑Bi2O3、Na2CO3、BaCO3、K2CO3、Ta2O5The X9R type ceramic capacitor dielectric material is prepared by burdening, ball milling, thinning raw materials, presintering, secondary ball milling and other processes, utilizing a solid phase reaction and a carbonate decomposition process. The material can meet the requirement that X9R meets the requirement (delta C/C) within the temperature range of-55-200 DEG C25) Less than or equal to plus or minus 15 percent and wide working temperatureThe preparation method has the advantages of simple preparation method, easy control of reaction conditions, high repeatability, low cost, large-scale production and suitability for industrial production, and meets the application requirement of wide-temperature field of electronic component design.
Description
Technical Field
The invention belongs to the technical field of electronic ceramic application, and particularly relates to a lead-free bismuth sodium titanate-based X9R type ceramic capacitor material and a preparation method thereof.
Background
With the rapid development of modern electronics and microelectronics technologies, electronic component designs tend to be miniaturized, high-frequency, integrated and applied in wide temperature range, and ceramic capacitors are required to have wider temperature stability and lower loss. The current multilayer ceramic capacitor (MLCC) is mainly of two types X7R and X8R, which have upper limit temperatures of 125 ℃ and 150 ℃ respectively according to the II-type dielectric standard of the electronics industry association, and fail due to failure to provide temperature stable dielectric properties when the use temperature exceeds its limit temperature. The X9R type MLCC has a capacitance change rate delta C/C in the temperature range of-55 to 200 DEG C25℃Not more than 15%, therefore, the development of X9R type MLCC dielectric ceramic with higher temperature stability has attracted great interest to scientists in recent years. However, most X9R type MLCC ceramic dielectrics are lead based relaxor ferroelectrics, which are environmentally undesirable and are not healthy. Based on the above, the research and development of the lead-free X9R MLCC ceramic medium not only has important application value, but also has great significance for environmental protection. The invention develops an X9R type ceramic capacitor dielectric material with low loss, high dielectric constant and high temperature stability based on lead-free bismuth sodium titanate, and is beneficial to expanding the material type of MLCC.
Disclosure of Invention
The invention aims to provide a lead-free X9R type ceramic capacitor material and a preparation method thereof, wherein the temperature change rate is not more than 15% within the temperature range of-55-200 ℃.
The invention relates to a lead-free bismuth sodium titanate-based X9R type ceramic capacitor material, wherein the nominal chemical formula of the X9R type ceramic capacitor material is 0.7(0.94 Na)0.5Bi0.5TiO3-0.06BaTiO3)-0.3KTaO3。
The preparation method of the lead-free bismuth sodium titanate-based X9R type ceramic capacitor material comprises the following specific steps:
(1) bi with the purity of more than 99 percent2O3、Na2CO3、TiO2、BaCO3、K2CO3、Ta2O5Adding a ball milling medium as a starting material, mixing and ball milling, and drying after ball milling to prepare dried powder;
(2) pre-burning the dried powder prepared in the step (1) to prepare pre-burned powder;
(3) grinding the pre-sintered powder prepared in the step (2), then ball-milling by taking absolute ethyl alcohol as a ball-milling medium, drying and grinding the powder into powder after ball-milling;
(4) adding a binder into the powder prepared in the step (3) for granulation, tabletting and forming to obtain a ceramic blank body, and discharging colloid from the ceramic blank body;
(5) calcining the ceramic blank obtained in the step (4), and cooling to room temperature;
(6) and (5) polishing the surface of the ceramic preform obtained in the step (5), ultrasonically cleaning the surface of the ceramic preform with alcohol, coating a layer of silver paste on the surface of the ceramic preform, drying and firing to obtain the X9R type ceramic capacitor dielectric material.
Further, in the step (1), according to Bi2O3：Na2CO3：TiO2：BaCO3：K2CO3：Ta2O50.1645: 0.1645: 0.7: 0.042: 0.15: after the materials are mixed according to the molar ratio of 0.15, absolute ethyl alcohol is used as a ball milling medium, the mixture is subjected to ball milling for 12 hours, and the mixture is dried for 12 hours at the temperature of 80 ℃ to prepare a dried sample.
Furthermore, in the step (2), the pre-sintering is performed by raising the temperature to 800-900 ℃ at a rate of 5 ℃/min for 6 hours.
Further, in the step (3), the raw materials are ball-milled for 12 hours, uniformly mixed, dried at 80 ℃ for 12 hours and then ground into powder.
Furthermore, in the step (5), the calcination is carried out at 1100-1200 ℃ for 3 hours.
Further, in the step (6), the surface of the ceramic plastic blank is polished by 1200-mesh sand paper; the firing is carried out at 600 ℃ for 30 min.
Furthermore, in the step (4), 2-8 wt% of polyvinyl alcohol aqueous solution is added as a binder, tabletting molding is carried out in a mold with the diameter of 14mm, and the colloid discharged from the ceramic blank body is discharged after heat preservation for 1-2 hours at 400-600 ℃.
Further, the concentration of the aqueous polyvinyl alcohol solution was 5 wt%. .
The invention has the following beneficial effects:
the ceramic dielectric material provided by the invention has excellent temperature stability, the temperature change rate of the ceramic dielectric material within the temperature range of-55 ℃ to +200 ℃ does not exceed the range requirement of +/-15%, and the temperature stability requirement of the X9R type ceramic capacitor dielectric material is met. The preparation method is simple, and because the material preparation method adopts the traditional solid phase method, the reaction conditions are easy to control and the repeatability is high; the method has the advantages of simple equipment, easy operation, low cost, large-scale production and good industrialization prospect.
Drawings
FIG. 1 shows 0.7(0.94 Na) produced by the present invention0.5Bi0.5TiO3-0.06BaTiO3)-0.3KTaO3X-ray spectra of the material.
FIG. 2 shows 0.7(0.94 Na) produced by the present invention0.5Bi0.5TiO3-0.06BaTiO3)-0.3KTaO3A micrograph of the material.
FIG. 3 shows 0.7(0.94 Na) produced by the present invention0.5Bi0.5TiO3-0.06BaTiO3)-0.3KTaO3The dielectric constant of the material is plotted against temperature.
FIG. 4 shows 0.7(0.94 Na) produced by the present invention0.5Bi0.5TiO3-0.06BaTiO3)-0.3KTaO3Temperature profile of the material.
Detailed Description
The invention adopts the traditional solid phase method to prepare the lead-free bismuth sodium titanate-based X9R type ceramic capacitor dielectric material, and carries out silver firing treatment on the surface of the ceramic, thus obtaining the excellent temperature stable type capacitor element.
The present invention will be specifically described below with reference to examples. The following examples are illustrative and not intended to be limiting, and are not intended to limit the scope of the invention.
Example 1
(1) Adding TiO into the mixture2(99％)﹑Bi2O3(99％)、Na2CO3(99％)、BaCO3(99.95％)、K2CO3(99％)、Ta2O5(99.5%) starting material according to formula (1-x) (0.94 Na)0.5Bi0.5TiO3-0.06BaTiO3)-xKTaO3The proportioning materials are put into a ball milling tank, zirconia balls and a nylon tank are selected, the mixing and ball milling time is 12 hours, the rotating speed is 300r/min, and the ball milling medium is absolute ethyl alcohol.
(2) The obtained product is placed in an oven at 80 ℃ for drying for 12h, and is pre-sintered for 6 h when the temperature is raised to 850 ℃ at the heating rate of 5 ℃/min.
(3) Taking out the pre-sintered powder, grinding, ball milling for 12h by using absolute ethyl alcohol as a ball milling medium, uniformly mixing, drying for 12h at 80 ℃, and grinding into powder.
(4) And pressing the uniformly mixed powder into a circular ceramic blank with the diameter of 14mm and the thickness of 1mm by using a uniaxial tablet press.
(5) And (2) granulating by taking a polyvinyl alcohol aqueous solution with the mass percentage concentration of 5% as a binder, pressing into a wafer-shaped plastic blank body with the diameter of 14mm and the thickness of 1mm under the pressure of 60MPa, heating to 600 ℃ at the heating rate of 1 ℃/min, preserving heat for 2 hours, and discharging colloid.
(6) And (3) placing the ceramic blank in a high-temperature resistance furnace, heating to 1150 ℃ from room temperature at the heating rate of 5 ℃/min, sintering for 3h, and cooling to room temperature along with the furnace.
(7) And then polishing the surface of the fired ceramic by using 1200-mesh sand paper, ultrasonically cleaning the surface of the ceramic by using alcohol, finally coating a layer of silver paste on the surface of the ceramic, drying the ceramic, and then firing the ceramic at 600 ℃ for 30min to prepare the lead-free bismuth sodium titanate-based X9R temperature stable ceramic capacitor dielectric material.
The preferred embodiments of the invention disclosed above are intended to be illustrative only. The preferred embodiments are not intended to be exhaustive or to limit the invention to the precise embodiments disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention. The invention is limited only by the claims and their full scope and equivalents.
Claims (9)
1. A lead-free bismuth sodium titanate-based X9R ceramic capacitor material is characterized in that the nominal chemical formula of the X9R ceramic capacitor material is 0.7(0.94 Na)0.5Bi0.5TiO3-0.06BaTiO3)-0.3KTaO3。
2. The preparation method of the lead-free bismuth sodium titanate-based X9R type ceramic capacitor material of claim 1 is characterized by comprising the following specific steps:
(1) bi with the analytically pure more than 99 percent2O3、Na2CO3、TiO2、BaCO3、K2CO3、Ta2O5Adding a ball milling medium as a starting material, mixing and ball milling, and drying after ball milling to prepare dried powder;
(2) pre-burning the dried powder prepared in the step (1) to prepare pre-burned powder;
(3) grinding the pre-sintered powder prepared in the step (2), then ball-milling by taking absolute ethyl alcohol as a ball-milling medium, drying and grinding the powder into powder after ball-milling;
(4) adding a binder into the powder prepared in the step (3) for granulation, tabletting and forming to obtain a ceramic blank body, and discharging colloid from the ceramic blank body;
(5) calcining the ceramic blank obtained in the step (4), and cooling to room temperature;
(6) and (5) polishing the surface of the ceramic preform obtained in the step (5), ultrasonically cleaning the surface of the ceramic preform with alcohol, coating a layer of silver paste on the surface of the ceramic preform, drying and firing to obtain the X9R type ceramic capacitor dielectric material.
3. The method for preparing the lead-free bismuth sodium titanate-based X9R type ceramic capacitor material as claimed in claim 2, wherein the steps are(1) In accordance with Bi2O3：Na2CO3：TiO2：BaCO3：K2CO3：Ta2O50.1645: 0.1645: 0.7: 0.042: 0.15: after the materials are mixed according to the molar ratio of 0.15, absolute ethyl alcohol is used as a ball milling medium, the mixture is subjected to ball milling for 12 hours, and the mixture is dried for 12 hours at the temperature of 80 ℃ to prepare a dried sample.
4. The method for preparing the lead-free bismuth sodium titanate-based X9R ceramic capacitor material as claimed in claim 2, wherein the pre-sintering in step (2) is performed by heating to 800-900 ℃ at a rate of 5 ℃/min for 6 hours.
5. The preparation method of the lead-free bismuth sodium titanate-based X9R ceramic capacitor material as claimed in claim 2, wherein in the step (3), the raw materials are ball-milled for 12 hours, mixed uniformly, dried at 80 ℃ for 12 hours and then ground into powder.
6. The method for preparing a lead-free bismuth sodium titanate-based X9R type ceramic capacitor material as claimed in claim 2, wherein in the step (5), the calcination is carried out at 1100 to 1200 ℃ for 3 hours.
7. The method for preparing a lead-free bismuth sodium titanate-based X9R type ceramic capacitor material as claimed in claim 2, wherein in the step (6), the surface of the ceramic preform is ground with 1200-mesh sandpaper; the firing is carried out at 600 ℃ for 30 min.
8. The method for preparing the lead-free bismuth sodium titanate-based X9R ceramic capacitor material as claimed in claim 2, wherein in the step (4), 2-8 wt% of polyvinyl alcohol aqueous solution is added as a binder, the ceramic green body is tabletted and formed in a mold with a diameter of 14mm, and the ceramic green body discharged colloid is discharged after the ceramic green body is kept at 400-600 ℃ for 1-2 hours.
9. The method for producing a lead-free bismuth sodium titanate-based X9R type ceramic capacitor material as claimed in claim 8, wherein the concentration of the aqueous polyvinyl alcohol solution is 5 wt%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110555550.XA CN113061025A (en) | 2021-05-21 | 2021-05-21 | Lead-free bismuth sodium titanate-based X9R type ceramic capacitor material and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110555550.XA CN113061025A (en) | 2021-05-21 | 2021-05-21 | Lead-free bismuth sodium titanate-based X9R type ceramic capacitor material and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113061025A true CN113061025A (en) | 2021-07-02 |
Family
ID=76568616
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110555550.XA Pending CN113061025A (en) | 2021-05-21 | 2021-05-21 | Lead-free bismuth sodium titanate-based X9R type ceramic capacitor material and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113061025A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114436646A (en) * | 2021-12-16 | 2022-05-06 | 江苏久汇新材料科技有限公司 | Ceramic capacitor material and preparation method thereof |
| CN114605147A (en) * | 2022-03-09 | 2022-06-10 | 电子科技大学 | Sodium bismuth titanate-based dielectric energy storage ceramic and preparation method thereof |
| CN114823140A (en) * | 2022-05-06 | 2022-07-29 | 桂林理工大学 | Medium-temperature sintered X7R type ceramic capacitor dielectric material and preparation method thereof |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002321976A (en) * | 2001-02-22 | 2002-11-08 | Tdk Corp | Piezoelectric ceramic |
| CN105461303A (en) * | 2014-09-25 | 2016-04-06 | Tdk株式会社 | Piezoelectric composition, piezoelectric element and sputtering target |
| CN105732025A (en) * | 2016-01-20 | 2016-07-06 | 武汉理工大学 | Preparation method of sodium-bismuth-titanate-base X9R multilayer ceramic capacitor material and device thereof |
| CN106518059A (en) * | 2016-11-14 | 2017-03-22 | 北京工业大学 | Sodium bismuth titanate-based ternary system high dielectric lead-free ceramic capacitor material with high temperature stability and preparation method thereof |
| JP2017114751A (en) * | 2015-12-25 | 2017-06-29 | サムソン エレクトロ−メカニックス カンパニーリミテッド． | Dielectric ceramic composition and ceramic electronic component comprising the same |
| CN108147813A (en) * | 2018-02-07 | 2018-06-12 | 广州光鼎科技集团有限公司 | A kind of high tension electricity coefficient bismuth-sodium titanate base lead-free piezoelectric ceramic and preparation method thereof |
| WO2020054779A1 (en) * | 2018-09-12 | 2020-03-19 | Tdk株式会社 | Dielectric thin film, dielectric thin film element, piezoelectric actuator, piezoelectric sensor, head assembly, head stack assembly, hard disk drive, printer head and inkjet printer device |
| CN110963796A (en) * | 2019-12-25 | 2020-04-07 | 安徽大学 | Giant dielectric constant low-loss X8R type ceramic capacitor material and preparation method thereof |
| CN111807833A (en) * | 2020-07-27 | 2020-10-23 | 杭州肄康新材料有限公司 | Nitrogen and potassium niobate double-doped lead-free piezoelectric ceramic and preparation method thereof |
| CN111848154A (en) * | 2019-04-26 | 2020-10-30 | 中寰卫星导航通信有限公司 | Ceramic capacitor medium and preparation method thereof |
-
2021
- 2021-05-21 CN CN202110555550.XA patent/CN113061025A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002321976A (en) * | 2001-02-22 | 2002-11-08 | Tdk Corp | Piezoelectric ceramic |
| CN105461303A (en) * | 2014-09-25 | 2016-04-06 | Tdk株式会社 | Piezoelectric composition, piezoelectric element and sputtering target |
| JP2017114751A (en) * | 2015-12-25 | 2017-06-29 | サムソン エレクトロ−メカニックス カンパニーリミテッド． | Dielectric ceramic composition and ceramic electronic component comprising the same |
| CN105732025A (en) * | 2016-01-20 | 2016-07-06 | 武汉理工大学 | Preparation method of sodium-bismuth-titanate-base X9R multilayer ceramic capacitor material and device thereof |
| CN106518059A (en) * | 2016-11-14 | 2017-03-22 | 北京工业大学 | Sodium bismuth titanate-based ternary system high dielectric lead-free ceramic capacitor material with high temperature stability and preparation method thereof |
| CN108147813A (en) * | 2018-02-07 | 2018-06-12 | 广州光鼎科技集团有限公司 | A kind of high tension electricity coefficient bismuth-sodium titanate base lead-free piezoelectric ceramic and preparation method thereof |
| WO2020054779A1 (en) * | 2018-09-12 | 2020-03-19 | Tdk株式会社 | Dielectric thin film, dielectric thin film element, piezoelectric actuator, piezoelectric sensor, head assembly, head stack assembly, hard disk drive, printer head and inkjet printer device |
| CN111848154A (en) * | 2019-04-26 | 2020-10-30 | 中寰卫星导航通信有限公司 | Ceramic capacitor medium and preparation method thereof |
| CN110963796A (en) * | 2019-12-25 | 2020-04-07 | 安徽大学 | Giant dielectric constant low-loss X8R type ceramic capacitor material and preparation method thereof |
| CN111807833A (en) * | 2020-07-27 | 2020-10-23 | 杭州肄康新材料有限公司 | Nitrogen and potassium niobate double-doped lead-free piezoelectric ceramic and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 焦桓等: "《无机材料化学实验》", 31 January 2014, 陕西师范大学出版社 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114436646A (en) * | 2021-12-16 | 2022-05-06 | 江苏久汇新材料科技有限公司 | Ceramic capacitor material and preparation method thereof |
| CN114605147A (en) * | 2022-03-09 | 2022-06-10 | 电子科技大学 | Sodium bismuth titanate-based dielectric energy storage ceramic and preparation method thereof |
| CN114823140A (en) * | 2022-05-06 | 2022-07-29 | 桂林理工大学 | Medium-temperature sintered X7R type ceramic capacitor dielectric material and preparation method thereof |
| CN114823140B (en) * | 2022-05-06 | 2023-11-17 | 桂林理工大学 | Medium-temperature sintered X7R type ceramic capacitor dielectric material and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN113061025A (en) | Lead-free bismuth sodium titanate-based X9R type ceramic capacitor material and preparation method thereof | |
| CN103342556B (en) | Preparation method of two-phase low-temperature co-sintered temperature stable dielectric ceramic material | |
| CN108147813B (en) | Sodium bismuth titanate-based lead-free piezoelectric ceramic with high piezoelectric coefficient and preparation method thereof | |
| CN109180181B (en) | Lead-free relaxation antiferroelectric ceramic energy storage material and preparation method thereof | |
| CN111995383B (en) | Mg2-xMxSiO4-CaTiO3Composite microwave dielectric ceramic and preparation method thereof | |
| CN101560094A (en) | High-temperature stable medium material for multilayer ceramic capacitors and preparation method thereof | |
| CN113831121A (en) | Complex phase giant dielectric ceramic material with high breakdown field strength and preparation method thereof | |
| CN109485409B (en) | Tape casting method of sheet barium titanate ceramic material | |
| CN111004030B (en) | MgTiO (magnesium-titanium-oxide) powder3Microwave-based dielectric ceramic and preparation method thereof | |
| JPH0478583B2 (en) | ||
| CN110423116B (en) | X7R type ceramic capacitor dielectric material and preparation method thereof | |
| CN107285760B (en) | Preparation method of low-loss giant dielectric constant ceramic material | |
| CN107903055B (en) | Gradient doped sodium bismuth titanate based multilayer lead-free piezoelectric ceramic | |
| CN113045307B (en) | High-dielectric low-loss barium titanate-based ceramic and preparation method thereof | |
| CN104310986A (en) | High dielectric constant stable-temperature ceramic capacitor dielectric material | |
| CN105399405A (en) | Low dielectric microwave ferroelectric ceramics and preparation method thereof | |
| CN107746271B (en) | AgTa co-doped titanium dioxide-based dielectric ceramic material with low frequency and low dielectric loss and preparation method thereof | |
| CN113264762A (en) | X8R type ceramic capacitor material and preparation method thereof | |
| CN101823876B (en) | Ceramic material for temperature stabilization type multilayer ceramic capacitor and preparation method thereof | |
| CN110511026B (en) | X8R type ceramic capacitor dielectric material and preparation method thereof | |
| CN103601495A (en) | NP0 low-temperature sintered ceramic capacitor dielectric material and preparation method thereof | |
| CN102627456B (en) | Low-loss high-voltage ceramic capacitor dielectric | |
| CN115385688A (en) | Barium strontium zirconate titanate-based dielectric ceramic material and preparation method thereof | |
| CN110963796B (en) | Giant dielectric constant low-loss X8R type ceramic capacitor material and preparation method thereof | |
| CN115172048B (en) | Leadless barium titanate-based X9R type ceramic capacitor material and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210702 |