CN113053663A - Method for improving breakdown voltage of antiferroelectric capacitor - Google Patents
Method for improving breakdown voltage of antiferroelectric capacitor Download PDFInfo
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- CN113053663A CN113053663A CN201911269608.3A CN201911269608A CN113053663A CN 113053663 A CN113053663 A CN 113053663A CN 201911269608 A CN201911269608 A CN 201911269608A CN 113053663 A CN113053663 A CN 113053663A
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- 239000003990 capacitor Substances 0.000 title claims abstract description 74
- 230000015556 catabolic process Effects 0.000 title claims abstract description 67
- 238000000034 method Methods 0.000 title claims abstract description 23
- 230000008569 process Effects 0.000 claims description 6
- 230000010287 polarization Effects 0.000 description 24
- 238000012360 testing method Methods 0.000 description 17
- 230000000694 effects Effects 0.000 description 6
- 239000010410 layer Substances 0.000 description 5
- 238000004146 energy storage Methods 0.000 description 4
- 230000006872 improvement Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 241000282414 Homo sapiens Species 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
The invention relates to a method for improving breakdown voltage of an antiferroelectric capacitor, which comprises the following steps: (1) measuring the breakdown voltage of the antiferroelectric capacitor, and recording the breakdown voltage as V1; (2) applying direct current voltage V2 on the end faces of two electrodes of the antiferroelectric capacitor, and maintaining the voltage for a certain time to improve the breakdown voltage of the antiferroelectric capacitor; wherein V2 is less than V1.
Description
Technical Field
The invention relates to a method for improving direct-current breakdown voltage of an antiferroelectric capacitor, belonging to the technical field of electrical properties of antiferroelectric capacitors.
Background
With the development of economic society, the demand of human beings on energy is increasing day by day, and the development and storage of new energy become the research focus at present. The high-energy-storage-density storage capacitor is widely applied to the fields of pulse power systems, hybrid electric vehicles, new energy power systems, miniature electronic equipment and the like. The antiferroelectric capacitor has the obvious advantage of high energy storage density compared with other capacitors, the dielectric constant does not decrease or increase along with the increase of an external electric field, and the antiferroelectric capacitor is an ideal storage capacitor with high energy storage density. Among them, the breakdown voltage is an important parameter for the application of the antiferroelectric capacitor. The breakdown voltage is the limit voltage, and when the breakdown voltage is exceeded, the dielectric material of the capacitor is broken down, the capacitor is safe and reliable when working under the condition that the breakdown voltage is not higher than the breakdown voltage, the higher the breakdown voltage is, the higher the reliability of the capacitor when working under the rated voltage is, and the higher the energy storage density is. Therefore, the breakdown voltage of the antiferroelectric capacitor is improved, and the working reliability of the antiferroelectric capacitor can be effectively improved.
At present, the technical approach for improving the breakdown voltage of the antiferroelectric capacitor is generally to adjust and control the components or doping modification of the dielectric layer of the antiferroelectric capacitor.
Disclosure of Invention
Therefore, the present invention is directed to provide a novel method for increasing the breakdown voltage of an antiferroelectric capacitor, so as to improve the operational reliability of the antiferroelectric capacitor.
In one aspect, the present invention provides a method for increasing breakdown voltage of an antiferroelectric capacitor, comprising:
(1) measuring the breakdown voltage of the antiferroelectric capacitor, and recording the breakdown voltage as V1;
(2) applying direct current voltage V2 on the end faces of two electrodes of the antiferroelectric capacitor, and maintaining the voltage for a certain time to improve the breakdown voltage of the antiferroelectric capacitor; wherein V2 is less than V1.
In the publication, a dc voltage V2(V2 < breakdown voltage V1) is applied to the two electrode terminals of the prepared antiferroelectric capacitor for the first time and maintained for a certain period of time, and electric polarization treatment is performed to increase the breakdown voltage.
Preferably, the antiferroelectric capacitor is selected from PLZT antiferroelectric capacitors.
In the invention, the dielectric layer of the antiferroelectric capacitor is of a multilayer structure, the values of V1 and V2 are related to the thickness of a single layer of the dielectric layer, the same dielectric layer component has different thicknesses, and V1 and V2 are different. V2 is also temperature dependent, with increasing temperature and decreasing V2. Since V2 has many factors, V2 < V1 is generally required. Wherein, when V2 is too low, the effect of increasing the breakdown voltage is reduced; when V2 is too high, the polarization breaks down.
Preferably, the breakdown voltages of the plurality of antiferroelectric capacitors are measured and the average of the breakdown voltages is calculated and designated as V1. The breakdown voltage test results of the samples have large dispersion, and the averaging of a plurality of samples is a conventional method in the field.
Further, preferably, the number of samples of the antiferroelectric capacitor is 5.
Preferably, the pressure maintaining time is 5 to 10 minutes, preferably 10 minutes.
Preferably, the pressure maintaining temperature is between room temperature and 125 ℃.
In another aspect, the present invention also provides an antiferroelectric capacitor prepared according to the above-described method.
Has the advantages that:
the invention firstly provides an idea of improving the breakdown voltage of the antiferroelectric capacitor through electric polarization treatment, and the method can improve the breakdown voltage of the antiferroelectric capacitor.
Detailed Description
The present invention is further illustrated by the following examples, which are to be understood as merely illustrative and not restrictive.
The invention provides a method for improving the breakdown voltage of an antiferroelectric capacitor, which is completely different from a general technical approach, and particularly realizes the improvement of the breakdown voltage by electrically polarizing the antiferroelectric capacitor. The method for improving the breakdown voltage of the antiferroelectric capacitor provided by the present invention is exemplarily illustrated as follows.
One or more antiferroelectric capacitors, e.g., 5 plates, are selected. The antiferroelectric capacitor includes, but is not limited to, a common antiferroelectric capacitor such as a PLZT antiferroelectric capacitor. Wherein the medium in the PLZT antiferroelectric capacitor is PLZT ceramic dielectric material, such as Pb0.92La0.08Zr0.95Ti0.05O3。
The breakdown voltage of the antiferroelectric capacitor is measured one by one at room temperature (generally 20-30 ℃), and the average value of the breakdown voltage is calculated and recorded as V1. The test method is a conventional method, and measurement of multiple sheets is often adopted because of the large breakdown voltage dispersion.
And a plurality of (for example 5) antiferroelectric capacitors are taken, and direct current voltage V2 is respectively applied to two electrode end faces of the antiferroelectric capacitors, and the direct current voltage V2 is kept for a period of time (pressure maintaining for short), so that electric polarization processing is realized. The purpose of the electric polarization treatment is to improve the breakdown strength of the material.
In an alternative embodiment, V2 is lower than V1. The value of V2 can be determined only when the electric polarization temperature, the single-layer film thickness of the capacitor dielectric layer and the series-parallel structure in the capacitor are given. If V2 is too small, the effect of improving the breakdown voltage is not significant. If V2 is close to V1, the higher V2 is, the more obvious effect of improving the breakdown voltage is, but if the breakdown voltage is too high, the sample will break down in the polarization process, mainly because the voltage needs to be maintained for a period of time during polarization, and the voltage action time is longer. The pressure maintaining temperature is room temperature or higher, and can be room temperature to 125 ℃. The pressure maintaining time can be 5-10 minutes.
The present invention will be described in detail by way of examples. It is also to be understood that the following examples are illustrative of the present invention and are not to be construed as limiting the scope of the invention, and that certain insubstantial modifications and adaptations of the invention by those skilled in the art may be made in light of the above teachings. The specific process parameters and the like of the following examples are also only one example of suitable ranges, i.e., those skilled in the art can select the appropriate ranges through the description herein, and are not limited to the specific values exemplified below.
Example 1:
the sample is a PLZT antiferroelectric capacitor, the end face of an electrode is silver, a medium is a PLZT ceramic medium material, and the material component is Pb0.92La0.08Zr0.95Ti0.05O3A capacity of 21.9nF and a dielectric loss tangent of 2.1X 10-3Insulation resistance of 5X 1011Ω。
The method for improving the breakdown voltage of the PLZT antiferroelectric capacitor comprises the following steps:
(1) taking 5 samples which are not subjected to electric polarization treatment;
(2) at room temperature, the breakdown voltages are respectively measured, the mean value V1 of the breakdown voltages is calculated to be 1821V, and the test results are shown in Table 1;
(3) taking another 5 pieces of the test sample, and respectively applying direct current voltage V2 to 1750V;
(4) respectively keeping 1750V at room temperature and continuously loading for 10 min;
(5) after the electric polarization treatment, the breakdown voltage of the test piece was measured and the average breakdown voltage was 1899V, and the test results are shown in Table 2.
Table 1 shows the breakdown voltage test results of the non-electrically polarized antiferroelectric capacitor of example 1:
v1 is the average value of breakdown voltages from 1# -5 #.
Table 2 shows the breakdown voltage test results of the obtained antiferroelectric capacitor after electric polarization in example 1:
samples # 6 to # 10 were electrically polarized according to V2. The test result shows that the breakdown voltage of the antiferroelectric capacitor after electric polarization is larger than that of an unpolarized sample.
Example 2:
the parameters of the PLZT antiferroelectric capacitor in this example 2 are the same as those in example 1, and the process of electric polarization treatment is basically the same, except that: the polarization temperature was varied, and example 1 was a polarization treatment at room temperature, and example 2 was a polarization treatment at 125 ℃.
The method for improving the breakdown voltage of the PLZT antiferroelectric capacitor comprises the following steps:
(1) taking 5 capacitors without electric polarization treatment;
(2) at room temperature, the breakdown voltages are respectively measured, the average value V1 of the breakdown voltages is 1806V, and the specific test results are shown in Table 3;
(3) taking another 5 anti-ferroelectric capacitors, heating to 125 deg.C, applying DC voltage 1395V, and keeping loading for 10min (due to temperature increase, its electric polarization voltage is reduced);
(4) after returning to room temperature, the breakdown voltage was measured to obtain a breakdown voltage of 1998V, and the specific test results are shown in Table 4.
Table 3 shows the breakdown voltage test results of the non-electrically polarized antiferroelectric capacitor of example 2:
table 4 shows the breakdown voltage test results of the antiferroelectric capacitor after electric polarization in example 2:
the test result shows that the breakdown voltage of the polarized antiferroelectric capacitor is larger than that of a sample which is not electrically polarized, the electrically polarized temperature is increased, and the effect of improving the breakdown voltage is more obvious.
Example 3
The parameters of the PLZT antiferroelectric capacitor in this example 3 are the same as those in example 2, and the process of electric polarization treatment is basically the same, except that: different polarization voltages V2 were chosen, 1035V and 1180V, respectively.
Table 5 shows the breakdown voltage test results of the non-electrically polarized antiferroelectric capacitor of example 3:
table 6 shows the breakdown voltage test results of the antiferroelectric capacitor after electric polarization in example 3:
table 7 shows the breakdown voltage test results of the antiferroelectric capacitor after electric polarization in example 3:
the test results of table 4, table 6 and table 7 show that the improvement effect of the breakdown voltage is not significant when the polarization voltage V2 is too low, and the improvement effect of the breakdown voltage is more significant as the V2 is closer to V1.
Claims (7)
1. A method of increasing the breakdown voltage of an antiferroelectric capacitor, comprising:
(1) measuring the breakdown voltage of the antiferroelectric capacitor, and recording the breakdown voltage as V1;
(2) applying direct current voltage V2 on the end faces of two electrodes of the antiferroelectric capacitor, and maintaining the voltage for a certain time to improve the breakdown voltage of the antiferroelectric capacitor; wherein V2 is less than V1.
2. The method of claim 1, wherein the antiferroelectric capacitor is selected from the group consisting of PLZT antiferroelectric capacitors.
3. The method of claim 1 or 2, wherein the breakdown voltages of the plurality of antiferroelectric capacitors are measured and the average of the breakdown voltages calculated is designated V1.
4. The method of claim 3, wherein the sample number of the antiferroelectric capacitor is 5.
5. The process according to any one of claims 1 to 4, characterized in that the dwell time is 5 to 10 minutes, preferably 10 minutes.
6. The process according to any one of claims 1 to 5, wherein the temperature of the dwell pressure is between room temperature and 125 ℃.
7. An antiferroelectric capacitor made according to the method of any one of claims 1-6.
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| CN201911269608.3A CN113053663A (en) | 2019-12-11 | 2019-12-11 | Method for improving breakdown voltage of antiferroelectric capacitor |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2133892A1 (en) * | 2008-06-12 | 2009-12-16 | General Electric Company | Polymer composites comprising antiferroelectric particles and methods of making the same |
| CN102584221A (en) * | 2012-01-05 | 2012-07-18 | 内蒙古科技大学 | Anti-ferroelectric thick film with high breakdown field strength and preparation method |
| CN109478464A (en) * | 2016-06-10 | 2019-03-15 | Tdk电子股份有限公司 | Filtering device for being filtered to interference signal |
-
2019
- 2019-12-11 CN CN201911269608.3A patent/CN113053663A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2133892A1 (en) * | 2008-06-12 | 2009-12-16 | General Electric Company | Polymer composites comprising antiferroelectric particles and methods of making the same |
| CN102584221A (en) * | 2012-01-05 | 2012-07-18 | 内蒙古科技大学 | Anti-ferroelectric thick film with high breakdown field strength and preparation method |
| CN109478464A (en) * | 2016-06-10 | 2019-03-15 | Tdk电子股份有限公司 | Filtering device for being filtered to interference signal |
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