CN113044807B - Preparation method of three-dimensional microstructure of metal material based on electromigration - Google Patents
Preparation method of three-dimensional microstructure of metal material based on electromigration Download PDFInfo
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- CN113044807B CN113044807B CN202110305979.3A CN202110305979A CN113044807B CN 113044807 B CN113044807 B CN 113044807B CN 202110305979 A CN202110305979 A CN 202110305979A CN 113044807 B CN113044807 B CN 113044807B
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- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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Abstract
The invention provides a preparation method of a three-dimensional microstructure of a metal material based on electromigration, which can design different sample combinations aiming at different three-dimensional modeling, is not limited by materials and geometric dimensions, prepares the three-dimensional microstructure of a semiconductor and the metal material with more complex shapes, prepares the microstructure based on electromigration, and then combines paper cutting, folding and Joule thermal welding technologies to obviously reduce preparation cost and experimental difficulty, realizes preparation of the metal microstructure, has simple operation and high efficiency, and is suitable for silver, copper, aluminum and other metal materials.
Description
Technical Field
The invention relates to the field of preparation of metal micrometer materials, in particular to a preparation method of a three-dimensional microstructure of a metal material based on electromigration.
Background
With the rapid development of micro-electro-mechanical systems (MEMS) in the fields of consumer electronics, aerospace, biomedicine and the like, a preparation method of a three-dimensional microstructure of a metal material has become one of the current hot researches, and many domestic and foreign scientists have carried out related work, including curling and folding of the material based on residual stress, rolling a film into a tubular structure, or fabricating a spiral photoelectric material by using a laser direct writing technology, or performing microstructure preparation based on buckling phenomenon, but these technologies are limited by materials and geometric dimensions, and are difficult to prepare three-dimensional microstructures of semiconductors and metal materials with complex shapes.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a preparation method of a three-dimensional microstructure of a metal material based on electromigration.
The preparation method of the three-dimensional microstructure of the metal material based on electromigration comprises the following steps:
1) Taking PI materials as a substrate on a plane, and designing a plurality of two-dimensional sample structures;
2) Carrying out microstructure growth on the surfaces of the two-dimensional sample structures by adopting an electromigration preparation technology, separating the two-dimensional sample structures on the planes by adopting a paper-cut technology, and realizing the space three-dimensional matching of the two-dimensional sample structures by adopting displacement and angle adjustment;
3) And carrying out space interconnection on the corresponding micrometer structures by adopting Joule thermal welding and fusing technology on each two-dimensional sample structure which completes space three-dimensional matching.
The two-dimensional sample structure is PI/TiN/metal material/TiN.
The micrometer structure is a micrometer wire or a micrometer belt or a micrometer pipe.
The microstructure is always vertical to the two-dimensional sample structure in the growth process, and the angle deviation is less than or equal to 5 degrees.
In the electromigration preparation process, modeling is carried out on internal atomic concentration distribution and electromigration paths, internal stress evolution process of electromigration driving metal atom accumulation is simulated and analyzed, and parameters required in the electromigration preparation process are determined.
Acquiring a relation between atomic concentration change and internal stress in electromigration process
Wherein J is atomic flow, N is atomic density, D 0 Is the factor coefficient, k is the Boltzmann constant, T is the temperature, Q gb Activation energy for atomic migration, sigma is internal stress of film, omega is atomic volume, Z * Is the effective valence, e is the charge value of the electron, ρ is the resistivity, j * The relation of resistivity and temperature ρ=ρ for current density, l for sample length 0 {1+α(T-T H ) And the alpha is a temperature influence coefficient, and a real-time R-t curve at two ends of the metal film is established, so that parameters required by electromigration preparation are determined.
When in space interconnection, an in-situ electrothermal model of a two-dimensional sample structure needs to be constructed, and the current value and time required by welding are determined.
The heat conduction model of the in-situ electrothermal model of the two-dimensional sample structure is as follows:
wherein T isIs the temperature, T 0 The initial ambient temperature, t is the power-on time, KK is the heat conductivity influence coefficient, v is the heat conduction factor, ρ is the density, q is the current density, x is the displacement, c is the specific heat capacity, and under the condition of neglecting the initial welding deformation and the heat conduction of the surface of the metal material, the steady-state temperature and the instantaneous temperature are->
Wherein K is the thermal conductivity, l is the sample length, and its local maximum temperature value is +.>
Where I is a current value, l is a sample length, a is a cross-sectional area, and σ is an electro-thermal influence coefficient, thereby determining an energization current magnitude and time.
The invention has the beneficial effects that: according to the invention, different sample combinations can be designed aiming at different three-dimensional shapes, the limitation of materials and geometric dimensions is avoided, the three-dimensional microstructures of semiconductors and metal materials with complex shapes are prepared, the microstructure is prepared based on electromigration, and then the technologies of paper cutting, folding and Joule thermal welding are combined, so that the preparation cost and experimental difficulty are obviously reduced, the preparation of the metal microstructures is realized, the operation is simple, the efficiency is high, and the method is suitable for silver, copper, aluminum and other metal materials.
Drawings
FIG. 1 is a schematic illustration of a single test of an embodiment of the present invention
FIG. 2 is a schematic diagram of a two-dimensional planar model and a corresponding spatial three-dimensional structure according to an embodiment of the present invention
FIG. 3 is a Joule-thermal welding and fusing model according to an embodiment of the present invention
FIG. 4 is a schematic diagram of an experimental platform according to an embodiment of the invention
Detailed Description
Embodiments of the present invention are further described below with reference to the accompanying drawings.
Taking aluminum as a metal material as an example, the three-dimensional microstructure of aluminum is prepared by the following steps:
1) As shown in FIG. 1, a two-dimensional sample structure PI/TiN/metal material/TiN is designed by taking a PI material as a substrate, and a surface layer TiN is a protective layer and is simultaneously taken as an electrode. The bottom layer TiN is an adhesive layer, in order to better adhere metal materials, such as aluminum, silver, copper, etc., in this embodiment, aluminum is taken as an example, so the two-dimensional sample structure is PI/TiN/Al/TiN, and aluminum nanowires or aluminum micro-strips or aluminum micro-tubes with different sizes can be manufactured on a single sample by utilizing an electromigration preparation technology, and the electromigration preparation technology is specifically published in the journal of the society of electronic plating academy of Shanghai city, electronic plating, the university, 2010, by referring to 11/5/2010.
2) For different three-dimensional modeling, different sample combinations are designed, taking three microstructures of FIG. 2 as examples, a 1 st horizontal bar structure, a plane model is composed of three aluminum samples, a PI/TiN/Al/TiN structure is manufactured on a PI substrate, and the growth of 3 aluminum nanowires is realized through an electromigration preparation technology. The aluminum nanowires were 1 μm in diameter and 200 μm and 80 μm in length, respectively. The aluminum micrometer line is always vertical to the aluminum sample in the growth process, and the angle deviation is less than or equal to 5 degrees. And then separating three samples by a paper cutting technology, and respectively carrying out displacement and angle adjustment by a four-axis precise adjustment probe seat to finally realize space three-dimensional matching. The other two "coordinate axis" and "double coordinate axis" structures in fig. 2 are assembled and prepared in a similar manner to the 1 st one.
Modeling the atomic concentration distribution and the electromigration path in the aluminum sample, providing a mathematical relation among main influencing parameters, and simulating and analyzing the internal stress evolution process of electromigration-driven aluminum atom accumulation so as to determine the parameters required by the experiment. The mathematical relationship between atomic concentration variation and internal stress during electromigration may be calculated based on the following equation:
wherein J is atomic flow, N is atomic density, D 0 Is the factor coefficient, k is the Boltzmann constant, T is the temperature, Q gb Activation energy for atomic migration, sigma is internal stress of film, omega is atomic volume, Z * Is the effective valence, e is the charge value of the electron, ρ is the resistivity, j * The relation between the resistivity and the temperature is that the current density, i, is the sample length:
ρ＝ρ 0 {1+α(T-T H )} (2)
where α is the temperature coefficient of influence.
And establishing a dynamic evolution equation of the internal stress based on a mathematical model, assuming that the internal materials of the film are uniform, taking the current density, the power-on time and the temperature as variables, deducing an atomic concentration simplified calculation equation, and deducing an aluminum film internal stress calculation equation. In the simplified model, the atomic concentration change can be characterized by the real-time change of the resistance value R at the two ends of the aluminum film. And (3) establishing a real-time R-t curve at two ends of the aluminum film, and determining experimental parameters by considering the influence of Joule heat.
Taking aluminum micrometer wire preparation as an example, the current density range used in electromigration preparation experiments is determined to be 2.0-2.5 MA/cm 2 Holes with the diameter of about 1 mu m are prepared as an atom discharge port, the growth rate of the aluminum wire is controlled to be 5-10 mu m/min, and the growth condition of the aluminum wire is monitored in situ by utilizing a microscope. When preparing the aluminum micrometer band or micrometer tube, the size of the discharge outlet is adjusted, and the current density is correspondingly adjusted.
3) Three-dimensional assembly involves two different interconnection techniques, joule-heating welding and fusing of aluminum materials, as shown in fig. 3. In this example, aluminum nanowires and aluminum ribbons were prepared in the samples by electromigration, and the spatial interconnection operation was performed in situ based on the aluminum samples. And constructing an in-situ electrothermal model of the aluminum sample, and determining the current value and time required by welding. Under the condition of fusing a single micro-wire and a micron belt, the internal temperature distribution condition of the material is analyzed, and the temperature peak value and the specific position thereof are determined.
Taking an aluminum wire interconnection electrothermal model as an example, the thermal conduction model is simplified into the following formula:
wherein T is temperature, T 0 The temperature is the initial ambient temperature, t is the power-on time, KK is the heat conductivity influence coefficient, v is the heat conduction factor, ρ is the density, q is the current density, x is the displacement, and c is the specific heat capacity.
Neglecting the initial deformation of the weld and the heat conduction of the surface of the aluminum wire, the steady state and instantaneous temperatures can be deduced as follows:
where K is the thermal conductivity and l is the sample length.
The final calculated local maximum temperature value is as follows:
wherein I is a current value, l is a sample length, A is a cross-sectional area, sigma is an electric-thermal influence coefficient, and the magnitude and time of the energizing current can be determined by the calculation method.
As shown in fig. 4, a precision moving and rotating platform of a preparation method of a three-dimensional microstructure of a metal material based on electromigration is provided, wherein the platform can perform electromigration, paper cutting, folding, joule thermal welding and fusing experiments, and the spatial position of the prepared frame structure is adjusted to realize micron-sized movement and rotation. The operation platform of the experiment platform comprises a displacement rough adjustment module, a four-axis precise adjustment probe seat (three-axis movement and rotation), an electrifying module, an optical observation module, a motion control module and a data analysis module. And a high-precision optical detection system is built above the operation platform, and the electromigration preparation process, the space movement, the rotation, the Joule thermal welding and the fusing process are observed in real time, so that the online in-situ monitoring and control of the three-dimensional structure preparation are realized.
The present embodiment is only exemplified by metallic aluminum, other metallic materials can be adopted, and the embodiment should not be considered as a limitation of the present invention, and any non-creative improvement or coloring based on the present invention falls within the protection scope of the present invention.
Claims (7)
1. The preparation method of the three-dimensional microstructure of the metal material based on electromigration is characterized by comprising the following steps of:
1) Taking PI materials as a substrate on a plane, and designing a plurality of two-dimensional sample structures;
2) Carrying out microstructure growth on the surfaces of the two-dimensional sample structures by adopting an electromigration preparation technology, separating the two-dimensional sample structures on the planes by adopting a paper-cut technology, and realizing the space three-dimensional matching of the two-dimensional sample structures by adopting displacement and angle adjustment;
3) Carrying out space interconnection on the corresponding micrometer structures by adopting Joule thermal welding and fusing technology on each two-dimensional sample structure which completes space three-dimensional matching;
acquiring a relation between atomic concentration change and internal stress in electromigration process
Wherein J is atomic flow, N is atomic density, D 0 Is the factor coefficient, k is the Boltzmann constant, T is the temperature, Q gb Activation energy for atomic migration, sigma is internal stress of film, omega is atomic volume, Z * Is the effective valence, e is the charge value of the electron, ρ is the resistivity, j * The relation of resistivity and temperature ρ=ρ for current density, l for sample length 0 {1+α(T-T H ) And the alpha is a temperature influence coefficient, and a real-time R-t curve at two ends of the metal film is established, so that parameters required by electromigration preparation are determined.
2. The method for preparing the three-dimensional microstructure of the metal material based on electromigration according to claim 1, wherein the method comprises the following steps: the two-dimensional sample structure is PI/TiN/metal material/TiN.
3. The method for preparing the three-dimensional microstructure of the metal material based on electromigration according to claim 1, wherein the method comprises the following steps: the micrometer structure is a micrometer wire or a micrometer belt or a micrometer pipe.
4. The method for preparing the three-dimensional microstructure of the metal material based on electromigration according to claim 1, wherein the method comprises the following steps: the microstructure is always vertical to the two-dimensional sample structure in the growth process, and the angle deviation is less than or equal to 5 degrees.
5. The method for preparing the three-dimensional microstructure of the metal material based on electromigration according to claim 1, wherein the method comprises the following steps: in the electromigration preparation process, modeling is carried out on internal atomic concentration distribution and electromigration paths, internal stress evolution process of electromigration driving metal atom accumulation is simulated and analyzed, and parameters required in the electromigration preparation process are determined.
6. The method for preparing the three-dimensional microstructure of the metal material based on electromigration according to claim 1, wherein the method comprises the following steps: when in space interconnection, an in-situ electrothermal model of a two-dimensional sample structure needs to be constructed, and the current value and time required by welding are determined.
7. The method for preparing the three-dimensional microstructure of the metal material based on electromigration according to claim 6, wherein the method comprises the following steps: the heat conduction model of the in-situ electrothermal model of the two-dimensional sample structure is as follows:
wherein T is temperature, T 0 The initial ambient temperature, t is the power-on time, KK is the heat conductivity influence coefficient, v is the heat conduction factor, ρ is the density, q is the current density, x is the displacement, c is the specific heat capacity, and under the condition of neglecting the initial welding deformation and the heat conduction of the surface of the metal material, the steady-state temperature and the instantaneous temperature are->
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