CN113042049A - Semiconductor photocatalyst and preparation method and application thereof - Google Patents
Semiconductor photocatalyst and preparation method and application thereof Download PDFInfo
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- CN113042049A CN113042049A CN202110287345.XA CN202110287345A CN113042049A CN 113042049 A CN113042049 A CN 113042049A CN 202110287345 A CN202110287345 A CN 202110287345A CN 113042049 A CN113042049 A CN 113042049A
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- 239000011941 photocatalyst Substances 0.000 title claims abstract description 33
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 230000001699 photocatalysis Effects 0.000 claims abstract description 8
- 239000010949 copper Substances 0.000 claims description 128
- 239000006260 foam Substances 0.000 claims description 31
- 229910052802 copper Inorganic materials 0.000 claims description 26
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 22
- 238000001035 drying Methods 0.000 claims description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 14
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 12
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 12
- 239000008367 deionised water Substances 0.000 claims description 11
- 229910021641 deionized water Inorganic materials 0.000 claims description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims description 9
- 238000003756 stirring Methods 0.000 claims description 9
- 238000005406 washing Methods 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 7
- 239000011859 microparticle Substances 0.000 claims description 7
- 239000011148 porous material Substances 0.000 claims description 7
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 claims description 6
- 239000010419 fine particle Substances 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- 239000002244 precipitate Substances 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000012295 chemical reaction liquid Substances 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 5
- 238000001027 hydrothermal synthesis Methods 0.000 claims description 5
- 238000000967 suction filtration Methods 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 2
- 239000003054 catalyst Substances 0.000 abstract description 7
- 239000000969 carrier Substances 0.000 abstract description 5
- 230000007613 environmental effect Effects 0.000 abstract description 3
- 238000005265 energy consumption Methods 0.000 abstract description 2
- 238000005286 illumination Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000000926 separation method Methods 0.000 abstract description 2
- 238000001308 synthesis method Methods 0.000 abstract description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 16
- 238000006243 chemical reaction Methods 0.000 description 12
- 238000002441 X-ray diffraction Methods 0.000 description 6
- 229910002092 carbon dioxide Inorganic materials 0.000 description 5
- 238000007146 photocatalysis Methods 0.000 description 5
- 238000007664 blowing Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910018292 Cu2In Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000004577 artificial photosynthesis Methods 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000003034 coal gas Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000002440 industrial waste Substances 0.000 description 1
- 239000004005 microsphere Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
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- B01J35/39—
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
- B01J23/72—Copper
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J27/00—Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
- B01J27/02—Sulfur, selenium or tellurium; Compounds thereof
- B01J27/04—Sulfides
-
- B01J35/60—
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/40—Carbon monoxide
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
- Y02W10/00—Technologies for wastewater treatment
- Y02W10/30—Wastewater or sewage treatment systems using renewable energies
- Y02W10/37—Wastewater or sewage treatment systems using renewable energies using solar energy
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Abstract
The invention relates to a semiconductor photocatalyst and a preparation method and application thereof, belonging to the technical field of photocatalysts. The semiconductor photocatalyst consists of ReS2With foamed Cu2The catalyst can improve the separation speed of photon-generated carriers under illumination, thereby improving the CO photocatalytic reduction2To solve CO2The catalyst has good practical application prospect in environmental problems and energy crisis caused by excessive discharge, and the catalyst has the advantages of simple synthesis method, easy operation, low requirement on equipment, low cost and low energy consumption, and is suitable for expanded production.
Description
Technical Field
The invention belongs to the technical field of photoelectric catalysts, and particularly relates to a semiconductor photocatalyst as well as a preparation method and application thereof.
Background
With the progress of science and technology and the development of industry, fossil fuels mainly comprising coal, petroleum and natural gas are continuously consumed, and the air quality is sharply reduced due to the discharge of a large amount of industrial waste gas, waste water and automobile exhaust, so that the global greenhouse effect is aggravated. Therefore, in order to promote the sustainable development of society, a new way for reducing CO in the atmosphere is urgently needed to be found2Concentration, and simultaneously solves the energy crisis faced by people.
CO2Is a very stable linear molecule with high activation energy and stable chemical properties, so how to react CO under mild conditions2The efficient conversion into chemicals with high added values is a research hotspot and difficulty in the field of catalysis. The photocatalysis technology has mild reaction conditions and is green and environment-friendly. Photocatalytic reduction of CO2That is, carbon dioxide is reduced with water on the surface of a semiconductor photocatalyst by artificial photosynthesis, that is, CO is2One of the best alternatives for conversion to useful hydrocarbons, the conversion of CO by photocatalytic technology2Reduction to useful fuels is a viable and sustainable approach to energy and environmental issues.
Disclosure of Invention
In view of the above, an object of the present invention is to provide a method for preparing a semiconductor photocatalyst; the second purpose is to provide a semiconductor photocatalyst; the third purpose is to provide the semiconductor photocatalyst for reducing CO in photocatalysis2The use of (1).
In order to achieve the purpose, the invention provides the following technical scheme:
1. a method of preparing a semiconductor photocatalyst, the method comprising:
(1) removing oil stain and impurities from the foam copper in the airAfter oxidation reaction, foam Cu is prepared2O/Cu；
(2) Adding ammonium perrhenate into water, stirring, adding thiourea, continuously stirring until the ammonium perrhenate and the thiourea are dissolved to obtain a reaction liquid, carrying out hydrothermal reaction on the reaction liquid at the temperature of 220-240 ℃ for 18-24h, washing and drying precipitates to obtain ReS2Microparticles; the mass ratio of the ammonium perrhenate to the thiourea is 500-550: 650-700;
(3) the ReS prepared in the step (2) is added2Uniformly dropwise adding the particles dissolved in water into the foamed Cu prepared in the step (1)2Drying on O/Cu; the foamed Cu2ReS on O/Cu2The amount of the fine particles is 2-3mg/cm2。
Preferably, in the step (1), the pore size in the copper foam is 80-130 ppi.
Preferably, in the step (1), the method for removing the oil stains and the impurities comprises the following steps: and sequentially placing the foamy copper into acetone, alcohol and deionized water, respectively ultrasonically cleaning for 20-30min, and drying.
Preferably, in the step (1), after the oxidation reaction in the air, the foamed Cu is prepared2The O/Cu method is as follows: placing the foam copper into a tube furnace, controlling the air flow at 300sccm and raising the temperature to 400-600 ℃ for 30-60min, then preserving the heat for 40-80min, and cooling.
Preferably, in the step (2), the washing is suction filtration washing.
Preferably, in step (2) and step (3), the drying is performed by: drying at 50-70 deg.C to constant weight.
2. A semiconductor photocatalyst prepared by the method.
3. The semiconductor photocatalyst is used for reducing CO in photocatalysis2The use of (1).
The invention has the beneficial effects that: the invention provides a semiconductor photocatalyst, a preparation method and application thereof, wherein the semiconductor photocatalyst consists of ReS2With foamed Cu2The catalyst can improve the separation speed of photon-generated carriers under illumination, thereby improving the CO photocatalytic reduction2To solve CO2The catalyst has good practical application prospect in environmental problems and energy crisis caused by excessive discharge, and the catalyst has the advantages of simple synthesis method, easy operation, low requirement on equipment, low cost and low energy consumption, and is suitable for expanded production.
The invention prepares the foamed Cu2In the case of O/Cu, the generation of oxidation-reduction is promoted by controlling the flow rate of air, thereby generating a sufficient amount of Cu2O to ensure sufficient amount of ReS to be compounded later2. And foamed Cu2The O/Cu has a unique framework structure, so that the ReS2Can be uniformly dispersed on the framework, and ReS is utilized2Has the characteristics of better stability, high mobility and the like in air, and is similar to Cu2And a heterojunction is formed after the O is compounded, so that the compounding of a photoproduction electron hole pair is inhibited, and the photocatalysis efficiency is improved. In addition, foamed Cu2The O/Cu also has a multi-stage pore channel structure, thereby being beneficial to CO2The adsorption and activation of the photo-generated carriers weaken the transportation rate of the photo-generated carriers among the pore channels, inhibit the recombination of the photo-generated carriers to a certain extent and further improve the photocatalysis efficiency.
Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention. The objectives and other advantages of the invention may be realized and attained by the means of the instrumentalities and combinations particularly pointed out hereinafter.
Drawings
For the purposes of promoting a better understanding of the objects, aspects and advantages of the invention, reference will now be made to the following detailed description taken in conjunction with the accompanying drawings in which:
FIG. 1 is a Cu foam prepared in example 12SEM image of O/Cu;
FIG. 2 is Cu foam prepared in example 12XRD pattern of O/Cu;
FIG. 3 is Cu foam prepared in example 22SEM image of O/Cu;
FIG. 4 is Cu foam prepared in example 32SEM image of O/Cu;
FIG. 5 is the ReS prepared in example 32SEM images of the microparticles;
FIG. 6 is Cu foam prepared in example 32O/Cu and ReS2@Cu2XRD pattern of O/Cu;
FIG. 7 is the ReS prepared in example 32@Cu2SEM image of O/Cu;
FIG. 8 is the ReS prepared in example 32@Cu2UV spectrogram of O/Cu;
FIG. 9 is Cu foam prepared in example 42SEM image of O/Cu;
FIG. 10 is Cu foam prepared in example 52SEM image of O/Cu;
FIG. 11 is Cu foam prepared in example 62SEM image of O/Cu;
FIG. 12 is Cu foam prepared in example 62XRD pattern of O/Cu.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Example 1
Preparation of semiconductor photocatalyst (ReS)2@Cu2O/Cu)
(1) Sequentially placing foamed copper (length is multiplied by width, 1cm is multiplied by 2cm) with the aperture of 100ppi into acetone, alcohol and deionized water to be respectively ultrasonically cleaned for 20min to remove oil stains and impurities on the surface of the foamed copper, drying the foamed copper and placing the dried foamed copper into a tubular furnace, controlling the air flow to be 100sccm, heating the dried foamed copper to 400 ℃ for 30min, then preserving the heat for 40min, and cooling to obtain the foamed Cu2O/Cu；
(2) 550mg of ammonium perrhenate (NH)4ReO4) Adding 60mL deionized water, stirring for 10min, and adding 700mg thiourea (CS (NH)2)2) Continuously stirring to obtain reaction liquid after ammonium perrhenate and thiourea are dissolved, and reactingTransferring the reaction solution into a reaction kettle, performing hydrothermal reaction in an electrothermal blowing dry box at 230 ℃ for 18h, taking the precipitate, placing the precipitate on a filter membrane with the pore diameter of 45 mu m, performing suction filtration and washing by using 2L of deionized water, and drying at 70 ℃ to constant weight to obtain the ReS2Microparticles;
(3) taking 4mg of the ReS prepared in the step (2)2Uniformly dropwise adding the particles dissolved in water into the foamed Cu prepared in the step (1)2Drying the obtained product on O/Cu at 70 ℃ to constant weight to obtain the semiconductor photocatalyst, wherein the foamed Cu in the semiconductor photocatalyst2ReS on O/Cu2The amount of the fine particles was 2mg/cm2. The semiconductor photocatalyst is irradiated for 5 hours under simulated sunlight, and the CO yield is 0.104 mu mol/mg.
FIG. 1 is a Cu foam prepared in example 12SEM image of O/Cu, showing foamed Cu2The microstructure of O/Cu is in a porous skeleton shape.
FIG. 2 is Cu foam prepared in example 12XRD pattern of O/Cu revealed that Cu is present2The positions of the diffraction peaks of O and Cu are consistent with those of a standard card, and the comparison shows that Cu2O and Cu are compounded together.
Example 2
Preparation of semiconductor photocatalyst (ReS)2@Cu2O/Cu)
(1) Sequentially placing foamed copper (length is multiplied by width, 1cm is multiplied by 2cm) with the aperture of 80ppi into acetone, alcohol and deionized water to be respectively ultrasonically cleaned for 25min to remove oil stains and impurities on the surface of the foamed copper, drying the foamed copper and placing the dried foamed copper into a tubular furnace, controlling the air flow to be 150sccm, raising the temperature to 600 ℃ through 45min, then preserving the temperature for 80min, and cooling to obtain the foamed Cu2O/Cu；
(2) 500mg of ammonium perrhenate (NH)4ReO4) Adding 60mL deionized water, stirring for 8min, and adding 650mg thiourea (CS (NH)2)2) Stirring to dissolve ammonium perrhenate and thiourea to obtain reaction solution, transferring the reaction solution into a reaction kettle, performing hydrothermal reaction in an electrothermal blowing dry box at 220 ℃ for 20h, putting the precipitate on a filter membrane with the pore diameter of 45 mu m, performing suction filtration and washing by 2L of deionized water, and drying at 50 ℃ to constant weight to obtain ReS2Microparticles;
(3) taking 6mg(2) ReS prepared in (1)2Uniformly dropwise adding the particles dissolved in water into the foamed Cu prepared in the step (1)2Drying the obtained product on O/Cu at 50 ℃ to constant weight to obtain the semiconductor photocatalyst, wherein the foamed Cu in the semiconductor photocatalyst2ReS on O/Cu2The amount of the fine particles was 3mg/cm2. The semiconductor photocatalyst is irradiated for 5 hours under simulated sunlight, and the CO yield is 0.263 mu mol/mg.
FIG. 3 is Cu foam prepared in example 22SEM image of O/Cu, showing foamed Cu2The microstructure of O/Cu is in a porous skeleton shape.
Example 3
Preparation of semiconductor photocatalyst (ReS)2@Cu2O/Cu)
(1) Sequentially placing the copper foam (length is multiplied by width, 1cm is multiplied by 2cm) with the aperture of 130ppi into acetone, alcohol and deionized water to be respectively ultrasonically cleaned for 30min to remove oil stains and impurities on the surface of the copper foam, drying the copper foam, placing the dried copper foam into a tubular furnace, controlling the air flow to be 180sccm, heating the copper foam to 500 ℃ for 60min through 60min, preserving the heat, and cooling to obtain the foamed Cu2O/Cu；
(2) 536mg of ammonium perrhenate (NH)4ReO4) 60mL of deionized water was added, the mixture was stirred for 6min, and 685mg of thiourea (CS (NH)2)2) Stirring to dissolve ammonium perrhenate and thiourea to obtain reaction solution, transferring the reaction solution into a reaction kettle, performing hydrothermal reaction in an electrothermal blowing dry box at 240 ℃ for 24h, putting the precipitate on a filter membrane with the pore diameter of 45 mu m, performing suction filtration and washing by 2L of deionized water, and drying at 60 ℃ to constant weight to obtain the ReS2Microparticles;
(3) 5mg of the ReS prepared in step (2) was taken2Uniformly dropwise adding the particles dissolved in water into the foamed Cu prepared in the step (1)2Drying the obtained product on O/Cu at 60 ℃ to constant weight to obtain the semiconductor photocatalyst, wherein the foamed Cu in the semiconductor photocatalyst2ReS on O/Cu2The amount of the fine particles was 2.5mg/cm2. The semiconductor photocatalyst is irradiated for 5 hours under simulated sunlight, and the CO yield is 0.411 mu mol/mg.
FIG. 4 is Cu foam prepared in example 32SEM image of O/Cu, showing foamed Cu2Of O/CuThe microstructure is in a porous skeleton shape.
FIG. 5 is the ReS prepared in example 32SEM image of the fine particles, showing that ReS2The microparticles are in the form of 3D microspheres.
FIG. 6 is Cu foam prepared in example 32O/Cu and ReS2@Cu2XRD pattern of O/Cu revealed that Cu is present2O、Cu、ReS2The positions of the diffraction peaks are consistent with those of a standard card, and the successful combination of the three is proved.
FIG. 7 is the ReS prepared in example 32@Cu2SEM image of O/Cu, finding that ReS2The particles are uniformly distributed in Cu2On O/Cu.
FIG. 8 is the ReS prepared in example 32@Cu2UV spectrum of O/Cu, Cu is known2O/Cu@ReS2The absorption range of (A) is around 650 nm.
Example 4
The difference from example 3 is that in step (1), the flow rate of air was controlled to 200 sccm. The prepared semiconductor photocatalyst is irradiated for 5 hours under simulated sunlight, and the CO yield is 0.388 mu mol/mg.
FIG. 9 is Cu foam prepared in example 42SEM image of O/Cu, showing foamed Cu2The microstructure of O/Cu is in a porous skeleton shape.
Example 5
The difference from example 3 is that in step (1), the flow rate of air was controlled to 250 sccm. The prepared semiconductor photocatalyst is irradiated for 5 hours under simulated sunlight, and the CO yield is 0.207 mu mol/mg.
FIG. 10 is Cu foam prepared in example 52SEM image of O/Cu, showing foamed Cu2The microstructure of O/Cu is in a porous skeleton shape.
Example 6
The difference from example 3 is that in step (1), the flow rate of air was controlled to 300 sccm. The prepared semiconductor photocatalyst is irradiated for 5 hours under simulated sunlight, and the CO yield is 0.211 mu mol/mg.
FIG. 11 is Cu foam prepared in example 62SEM image of O/Cu, showing foamed Cu2The microstructure of O/Cu is as followsPorous skeleton shape.
FIG. 12 is Cu foam prepared in example 62XRD pattern of O/Cu revealed that Cu is present2The positions of the diffraction peaks of O and Cu were consistent with those of the standard card, but a diffraction peak of CuO appeared, indicating that CuO was generated when the air flow rate was 300sccm, and that CuO and Cu were present2O/Cu are compounded together.
Finally, the above embodiments are only intended to illustrate the technical solutions of the present invention and not to limit the present invention, and although the present invention has been described in detail with reference to the preferred embodiments, it will be understood by those skilled in the art that modifications or equivalent substitutions may be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions, and all of them should be covered by the claims of the present invention.
Claims (8)
1. A preparation method of a semiconductor photocatalyst is characterized by comprising the following steps:
(1) removing oil stains and impurities from the foam copper, and performing oxidation reaction in the air to obtain the foam Cu2O/Cu；
(2) Adding ammonium perrhenate into water, stirring, adding thiourea, continuously stirring until the ammonium perrhenate and the thiourea are dissolved to obtain a reaction liquid, carrying out hydrothermal reaction on the reaction liquid at the temperature of 220-240 ℃ for 18-24h, washing and drying precipitates to obtain ReS2Microparticles; the mass ratio of the ammonium perrhenate to the thiourea is 500-550: 650-700;
(3) the ReS prepared in the step (2) is added2Uniformly dropwise adding the particles dissolved in water into the foamed Cu prepared in the step (1)2Drying on O/Cu; the foamed Cu2ReS on O/Cu2The amount of the fine particles is 2-3mg/cm2。
2. The method of claim 1, wherein in step (1), the pore size in the copper foam is from 80 to 130 ppi.
3. The method according to claim 1, wherein in the step (1), the method for removing oil stains and impurities comprises the following steps: and sequentially placing the foamy copper into acetone, alcohol and deionized water, respectively ultrasonically cleaning for 20-30min, and drying.
4. The method of claim 1, wherein in step (1), the oxidation reaction in air produces foamed Cu2The O/Cu method is as follows: placing the foam copper into a tube furnace, controlling the air flow at 300sccm and raising the temperature to 400-600 ℃ for 30-60min, then preserving the heat for 40-80min, and cooling.
5. The method of claim 1, wherein in step (2), the washing is suction filtration washing.
6. The method of claim 1, wherein in step (2) and step (3), the drying is performed by: drying at 50-70 deg.C to constant weight.
7. A semiconductor photocatalyst prepared by the process of any one of claims 1 to 6.
8. Use of the semiconductor photocatalyst of claim 7 in photocatalytic reduction of CO2The use of (1).
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115041200A (en) * | 2022-07-27 | 2022-09-13 | 重庆邮电大学 | Photocatalyst for converting carbon dioxide and preparation method and application thereof |
| CN115350716A (en) * | 2022-05-23 | 2022-11-18 | 重庆邮电大学 | Perovskite composite material photocatalyst and preparation method and application thereof |
| CN115487862A (en) * | 2022-09-28 | 2022-12-20 | 重庆邮电大学 | Low-titanium blast furnace slag zeolite/cuprous oxide composite photocatalyst and preparation method and application thereof |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110036756A1 (en) * | 2009-08-10 | 2011-02-17 | White Mark G | Novel catalysts and process for liquid hydrocarbon fuel production |
| US20160193595A1 (en) * | 2013-07-01 | 2016-07-07 | Prashant Nagpal | Nanostructured photocatalysts and doped wide-bandgap semiconductors |
| CN105821383A (en) * | 2016-06-07 | 2016-08-03 | 电子科技大学 | Method for preparing rhenium disulfide film |
| CN108855141A (en) * | 2018-07-23 | 2018-11-23 | 南阳师范学院 | A kind of ReS2/CdS photochemical catalyst and its preparation method and application |
| CN108889264A (en) * | 2018-07-13 | 2018-11-27 | 北京京盛国泰科技有限公司 | A kind of preparation method of the foam copper of adsorption-decomposition function formaldehyde |
| CN110124691A (en) * | 2019-05-07 | 2019-08-16 | 肇庆市华师大光电产业研究院 | A kind of preparation method of pollen carbon skeleton load growth rhenium disulfide photoelectric material |
| KR20200048872A (en) * | 2018-10-31 | 2020-05-08 | 한양대학교 산학협력단 | Method for Forming Nano-structure on Surface of Support |
| CN111118537A (en) * | 2019-07-24 | 2020-05-08 | 天津大学 | Molybdenum disulfide modified carbon layer coated cuprous oxide nanowire material growing on surface of foam copper and preparation method and application thereof |
| WO2020221600A1 (en) * | 2019-05-02 | 2020-11-05 | IFP Energies Nouvelles | Method for the photocatalytic reduction of carbon dioxide in the presence of an external electric field |
-
2021
- 2021-03-17 CN CN202110287345.XA patent/CN113042049B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110036756A1 (en) * | 2009-08-10 | 2011-02-17 | White Mark G | Novel catalysts and process for liquid hydrocarbon fuel production |
| US20160193595A1 (en) * | 2013-07-01 | 2016-07-07 | Prashant Nagpal | Nanostructured photocatalysts and doped wide-bandgap semiconductors |
| CN105821383A (en) * | 2016-06-07 | 2016-08-03 | 电子科技大学 | Method for preparing rhenium disulfide film |
| CN108889264A (en) * | 2018-07-13 | 2018-11-27 | 北京京盛国泰科技有限公司 | A kind of preparation method of the foam copper of adsorption-decomposition function formaldehyde |
| CN108855141A (en) * | 2018-07-23 | 2018-11-23 | 南阳师范学院 | A kind of ReS2/CdS photochemical catalyst and its preparation method and application |
| KR20200048872A (en) * | 2018-10-31 | 2020-05-08 | 한양대학교 산학협력단 | Method for Forming Nano-structure on Surface of Support |
| WO2020221600A1 (en) * | 2019-05-02 | 2020-11-05 | IFP Energies Nouvelles | Method for the photocatalytic reduction of carbon dioxide in the presence of an external electric field |
| CN110124691A (en) * | 2019-05-07 | 2019-08-16 | 肇庆市华师大光电产业研究院 | A kind of preparation method of pollen carbon skeleton load growth rhenium disulfide photoelectric material |
| CN111118537A (en) * | 2019-07-24 | 2020-05-08 | 天津大学 | Molybdenum disulfide modified carbon layer coated cuprous oxide nanowire material growing on surface of foam copper and preparation method and application thereof |
Non-Patent Citations (3)
| Title |
|---|
| QIANGHUANG ET AL.: ""Visible light driven photocatalytic reduction of CO2 on Au-Pt/Cu2O/ReS2 with high efficiency and controllable selectivity"", 《CHEMICAL ENGINEERING JOURNAL》 * |
| XINQIAN WANG ET AL.: ""Distorted 1T-ReS2 Nanosheets Anchored on Porous TiO2 Nanofibers for Highly Enhanced Photocatalytic Hydrogen Production"", 《ACS APPL.MATER.INTERFACES》 * |
| 于晶晶 等: ""热氧化法在泡沫铜上制备CuO纳米线及其光催化性能研究"", 《稀有金属》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115350716A (en) * | 2022-05-23 | 2022-11-18 | 重庆邮电大学 | Perovskite composite material photocatalyst and preparation method and application thereof |
| CN115041200A (en) * | 2022-07-27 | 2022-09-13 | 重庆邮电大学 | Photocatalyst for converting carbon dioxide and preparation method and application thereof |
| CN115487862A (en) * | 2022-09-28 | 2022-12-20 | 重庆邮电大学 | Low-titanium blast furnace slag zeolite/cuprous oxide composite photocatalyst and preparation method and application thereof |
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