CN113037258A - Non-contact photoelectric switch with short-time recovery capability - Google Patents

Non-contact photoelectric switch with short-time recovery capability Download PDF

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Publication number
CN113037258A
CN113037258A CN202110230909.6A CN202110230909A CN113037258A CN 113037258 A CN113037258 A CN 113037258A CN 202110230909 A CN202110230909 A CN 202110230909A CN 113037258 A CN113037258 A CN 113037258A
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photoelectric
switch
short
recovery capability
interface
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CN202110230909.6A
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不公告发明人
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Jiangsu Shitong Biotechnology Co Ltd
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Jiangsu Shitong Biotechnology Co Ltd
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/28Modifications for introducing a time delay before switching
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/94Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated

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Abstract

The invention discloses a non-contact photoelectric switch with short-time recovery capability, which comprises an execution switch (201), a photoelectric control driving part (202), an active control driving part (203) and a time delay part (204), wherein the execution switch (201) is connected with a power supply through a power supply input interface (201a), the execution switch (201) is connected with a target working system through a power supply output interface (201b), the time delay part (204) is connected with the target system through a control interface (204a), and the photoelectric control driving part (202) comprises a photoelectric conversion device.

Description

Non-contact photoelectric switch with short-time recovery capability
Technical Field
The invention relates to the technical field of photoelectric switch circuits, in particular to a non-contact photoelectric switch with short-time recovery capability.
Background
The photoelectric switch is a short-term photoelectric proximity switch, and utilizes the shielding or reflection of the detected object to the light beam to switch on the circuit by a synchronous loop, thereby detecting the existence of the object, the detected object is not limited to metal, all objects capable of reflecting light can be detected, the photoelectric switch converts the input current on the transmitter into optical signals to be emitted, and the receiver detects the target object according to the strength or existence of the received light.
The photoelectric switch is a kind of sensor, it changes the intensity of light between the transmitting end and the receiving end into the change of current to achieve the purpose of detection, because the output circuit and the input circuit of the photoelectric switch are isolated electrically, it can be used in many occasions.
The existing photoelectric switch is easily polluted by dust and oil stains, if the background light is too strong, the recovery time is prolonged, and the application of a non-contact power switch in a complex electromagnetic environment cannot be met.
Disclosure of Invention
In view of the above problems in the prior art, the present application provides a non-contact photoelectric switch with short-time recovery capability.
The technical scheme of the invention is as follows:
a non-contact photoelectric switch with short-time recovery capability comprises an execution switch, a photoelectric control driving part, an active control driving part and a time delay part, wherein the execution switch is connected with a power supply through a power supply input interface, the execution switch is connected with a target working system through a power supply output interface, and the time delay part is connected with the target system through a control interface.
As a preferred embodiment of the present invention: the execution switch is connected with the power input interface and the power output interface and controls the connection and disconnection between the power input interface and the power output interface.
As a preferred embodiment of the present invention: the power input interface and the power output interface are wire interfaces.
As a preferred embodiment of the present invention: the power input interface and the power output interface are metal interfaces.
As a preferred embodiment of the present invention: the photoelectric control driving part comprises a photoelectric conversion device, the photoelectric control driving part supplies power through a power supply port of the photoelectric control driving part, an output port of the photoelectric control driving part generates a control signal and transmits the control signal to the execution switch, and an output port of the photoelectric control driving part is provided with potential restoration.
As a preferred embodiment of the present invention: the photoelectric conversion device is a photosensitive diode or a triode.
As a preferred embodiment of the present invention: the active control driving part generates a corresponding potential signal at an output port thereof according to the potential of the input signal at the input port thereof and outputs the potential signal to the execution switch.
As a preferred embodiment of the present invention: the delay part delays the potential signal of the control interface for a specific time length and transmits the delayed potential signal to an output port of the delay part, and the potential of the output port of the delay part in the delay time keeps the previous state.
The beneficial technical effects of the invention are as follows:
according to the non-contact photoelectric switch with the short-time recovery capability, the delay part is arranged and connected with a target system through the control interface, so that the delay action of the switch is realized, the non-contact photoelectric switch with the short-time recovery capability is provided, and the application of the non-contact power switch in a complex electromagnetic environment is met.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without inventive exercise.
The structure, proportion, size and the like shown in the drawings are only used for matching with the content disclosed in the specification, so that the person skilled in the art can understand and read the description, and the description is not used for limiting the limit condition of the implementation of the invention, so the method has no technical essence, and any structural modification, proportion relation change or size adjustment still falls within the scope of the technical content disclosed by the invention without affecting the effect and the achievable purpose of the invention.
FIG. 1 is a schematic structural diagram of a non-contact photoelectric switch with short-time recovery capability according to the present invention;
FIG. 2 is a circuit diagram of an embodiment of a non-contact type photoelectric switch with short-time recovery capability;
fig. 3 is a simulation result of an embodiment of a non-contact type photoelectric switch with a short-time recovery capability.
Reference numerals: 201-execution switch, 201 a-power input interface, 201 b-power output interface, 202-photoelectric control driving part, 202 a-photoelectric drive control part power supply port, 202 b-photoelectric control driving part output port, 203-active control driving part, 203 a-input port, 203 b-output port, 204-time delay part, 204 a-control interface, 204 b-time delay part output port, 301-P type field effect tube, 301 a-power input port, 301 b-power output port, 302 a-resistor I, 302 b-photosensitive diode, 303-N type field effect tube, 304 a-active control interface, 304 b-resistor II, 304 c-capacitor and 304 d-resistor III.
Detailed Description
The present invention will be described in detail with reference to the accompanying drawings and examples. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1, the non-contact photoelectric switch with short-time recovery capability includes an execution switch 201, a photoelectric control driving unit 202, an active control driving unit 203, and a delay unit 204, where the execution switch 201 is connected to a power supply through a power input interface 201a, the execution switch 201 is connected to a target operating system through a power output interface 201b, and the delay unit 204 is connected to the target system through a control interface 204 a.
To further explain the present embodiment, it should be noted that the execution switch 201 connects the power input interface 201a and the power output interface 201b, and the execution switch 201 controls the connection and disconnection between the power input interface 201a and the power output interface 201 b.
To further explain the present embodiment, it should be noted that the power input interface 201a and the power output interface 201b are wire interfaces.
To further explain the present embodiment, it should be noted that the power input interface 201a and the power output interface 201b are metal interfaces.
To further explain the present embodiment, it should be noted that the photoelectric control driving portion 202 includes a photoelectric conversion device, the photoelectric control driving portion 202 supplies power through the photoelectric control driving portion power supply port 202a, the photoelectric control driving portion output port 202b generates a control signal to be transmitted to the execution switch 201, and the photoelectric control driving portion output port 202b is provided with potential restoration.
In order to further explain the embodiment, it should be noted that the photoelectric conversion device is a photodiode or a triode, and has strong anti-interference capability, stable operation, no contact, long service life, and high transmission efficiency.
To further explain the present embodiment, it should be noted that the active control driving part 203 generates a corresponding potential signal at its output port 203b to output to the execution switch 201 according to the potential of the input signal at its input port 203 a.
To further explain the present embodiment, it should be noted that the delay unit 204 delays the potential signal of the control interface 204a for a specific time period to the delay unit output port 204b, and the delay unit output port 204b maintains the previous potential state during the delay period.
In fig. 2, the pfet 301, i.e. Q1, is an execution switch, the power input port 301a is connected to the source of Q1, the power output port 301b is connected to the drain of Q1, and the gate voltage is controlled to control the on and off of the source and drain thereof.
The resistor I302 a, namely R1, and the photodiode 302b, namely Q2, form a photoelectric control driving part, the power input port 301a is connected to the ground through R1 and Q2, the photodiode Q2 disconnects the anode and the cathode under the condition of no external light source, and VSW is VBAT; when a light source with the wavelength of 780 nm-880 nm IS applied to Q2 for irradiation, the cathode and anode of Q2 are conducted, and the current IS IS conducted, at this time, VSW IS VLOW,
VLOW=VBAT-ISI1
the N-type field effect transistor 303, namely Q3, is an active control driving part, and when the gate voltage exceeds the threshold voltage, the source and drain electrodes of Q3 are turned on; when its gate voltage is below its threshold voltage, the source-drain poles of Q3 are turned off.
The second resistor 304b, i.e. R2, the capacitor 304C, i.e. C1, and the third resistor 304d, i.e. R3 form a delay unit, which connects the active control interface 304a and the active control driving unit 303, and the delay value is:
Figure BDA0002957949520000051
at this time, the effective delay τ of the delay part is determined as the time for the gate voltage of the N-type fet 303 to freely drop from the normal operating voltage to the threshold voltage.
The working principle of the embodiment is analyzed in three cases as follows:
turn-off to turn-on: the initial photoelectric switch is in an off state, VSW ═ VBAT, VCTRL ═ 0V, and VPWR ═ 0V. A light source with the wavelength of 780 nm-880 nm is used for irradiating a photodiode 302b, namely Q2, for a certain time t1, Q2 is conducted, VSW is lowered to VLOW, a P-type field effect transistor 301, namely Q1, is conducted, VPWR is raised to VBAT, the target system starts to supply power and works, at the moment, in order to lock a photoelectric switch, the target system applies high potential VHIGH to an active control interface 304a, VCTRL is raised to VHIGH, after time delay of a time delay part, an N-type field effect transistor 303, namely Q3 is conducted, and the VSW low potential is kept. By this point, the photoelectric switch is turned off and the opening process is finished.
Opening to closing: the initial opto-electronic switch is in an open state, VSW is at a low potential, VCTRL is at a high potential, VPWR is VBAT, and the target system applies a low potential to the active control interface 304a or makes VCTRL 0V. After the delay of the delay unit, Q3 which is the N fet 303 is turned off, at this time, since no light source is used for illumination, Q2 which is the photodiode 302b is in an off state, VSW rises to VBAT, Q1 which is the P fet 301 is turned off, VPWR is 0, the target system stops working, and VCTRL is kept at 0.
And (3) power failure: the initial photoelectric switch is in an open state, VSW is at a low potential, VCTRL is at a high potential, and VPWR is VBAT. A power burst failure, VBAT 0, results in VPWR 0, the target system power supply is interrupted, the voltage applied to the active control interface 304a is reduced, and VCTRL 0. At this time, due to the presence of the second resistor 304b, i.e., R2, the capacitor 304C, i.e., C1, and the third resistor 304d, i.e., R3, the gate potential of the N-fet 303, i.e., Q3, remains high, Q3 remains on, VSW remains low, and the P-fet 301, i.e., Q1, remains on. When the gate driving voltage VC of the nfet 303 drops to the threshold voltage τ of Q3, if the power supply returns to normal, i.e., VBAT returns, VPWR — VBAT also returns to normal operation, the target system applies a high voltage to the active control interface 304a again, and the opto-electronic switch is locked again.
Fig. 3 is a simulation result of example 1 of the non-contact type photoelectric switch having the short-time recovery capability. VBAT is the voltage of the power input port 301a, VC master controls the gate voltage of the N-fet 303, i.e., Q3, i.e., the output voltages of the second resistor 304b, the capacitor 304c, and the third resistor 304d, and VPWR is the voltage of the power output port 301 b.
As can be seen from fig. 3, at the time 100 μ s, the power supply voltage is turned on, and VBAT is 2.5V. At a time of 200 μ s, since the photodiode 302b, i.e., Q2, is irradiated with light having a wavelength of 780nm to 880nm, and the photoelectric switch is turned on, the voltage VPWR of the power output port 301b becomes 2.5V, and at this time, VCTRL is controlled by the target system to become a high voltage, and VC gradually rises to a stable value due to the presence of the delay unit. At time 1100 μ s, the power supply fails, VBAT ═ 0V. At this time, the target system supply voltage VPWR sharply decreases, the voltage VCTRL at the active control interface 304a also sharply decreases, and VC gradually decreases due to the existence of the delay section. Before VC is lowered to the threshold voltage of the N-type field effect transistor 303, namely Q3, namely 1600 mu s, the power supply voltage is recovered to be normal, extra light is not needed at the moment, the photoelectric switch is recovered to work, VPWR is recovered to be in a normal working state, and the system is healed.
The embodiments of the present invention described above are combinations of elements and features of the present invention. Unless otherwise mentioned, the elements or features may be considered optional. Each element or feature may be practiced without being combined with other elements or features. In addition, the embodiments of the present invention may be configured by combining some elements and/or features. The order of operations described in the embodiments of the present invention may be rearranged. Some configurations of any embodiment may be included in another embodiment, and may be replaced with corresponding configurations of the other embodiment. It will be apparent to those skilled in the art that claims that are not explicitly cited in each other in the appended claims may be combined into an embodiment of the present invention or may be included as new claims in a modification after the present invention is filed.
In a firmware or software configuration, embodiments of the present invention may be implemented in the form of modules, procedures, functions, and the like. The software codes may be stored in memory units and executed by processors. The memory unit is located inside or outside the processor, and may transmit and receive data to and from the processor via various known means.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (8)

1. A non-contact photoelectric switch with short-time recovery capability is characterized in that: the system comprises an execution switch (201), a photoelectric control driving part (202), an active control driving part (203) and a time delay part (204), wherein the execution switch (201) is connected with a power supply through a power supply input interface (201a), the execution switch (201) is connected with a target working system through a power supply output interface (201b), and the time delay part (204) is connected with the target system through a control interface (204 a).
2. The non-contact type electro-optical switch with short-term recovery capability according to claim 1, characterized in that: the execution switch (201) is connected with the power input interface (201a) and the power output interface (201b), and the execution switch (201) controls connection and disconnection between the power input interface (201a) and the power output interface (201 b).
3. The non-contact type electro-optical switch with short-term recovery capability according to claim 2, characterized in that: the power input interface (201a) and the power output interface (201b) are wire interfaces.
4. The non-contact type electro-optical switch with short-term recovery capability according to claim 2, characterized in that: the power input interface (201a) and the power output interface (201b) are metal interfaces.
5. The non-contact type electro-optical switch with short-term recovery capability according to claim 1, characterized in that: the photoelectric control driving part (202) comprises a photoelectric conversion device, the photoelectric control driving part (202) supplies power through a photoelectric drive control part power supply port (202a), a photoelectric control driving part output port (202b) generates a control signal and transmits the control signal to the execution switch (201), and the photoelectric control driving part output port (202b) is provided with potential restoration.
6. The non-contact type electro-optical switch with short-term recovery capability according to claim 5, wherein: the photoelectric conversion device is a photosensitive diode or a triode.
7. The non-contact type electro-optical switch with short-term recovery capability according to claim 1, characterized in that: the active control driving part (203) generates a corresponding potential signal at an output port (203b) thereof according to the potential of the input signal at an input port (203a) thereof and outputs the corresponding potential signal to the execution switch (201).
8. The non-contact type electro-optical switch with short-term recovery capability according to claim 1, characterized in that: the delay unit (204) delays the potential signal of the control interface (204a) for a specific time period and transmits the delayed potential signal to the delay unit output port (204b), and the potential of the delay unit output port (204b) is kept in the previous state during the delay period.
CN202110230909.6A 2021-03-02 2021-03-02 Non-contact photoelectric switch with short-time recovery capability Withdrawn CN113037258A (en)

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Application publication date: 20210625