CN113035970A - Nano-diamond-based detector with adjustable positive and negative photoconductive characteristics and preparation method thereof - Google Patents
Nano-diamond-based detector with adjustable positive and negative photoconductive characteristics and preparation method thereof Download PDFInfo
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Abstract
The invention provides a nano diamond-based detector with adjustable positive and negative photoconduction characteristics and a preparation method thereof, wherein the nano diamond-based detector comprises a substrate, an interdigital electrode layer and a nano diamond layer which are sequentially arranged from bottom to top, the nano diamond layer consists of diamond particles with the particle size of 3-5nm, the positive and negative photoconduction characteristics of the nano diamond-based detector are adjustable, the positive photoconduction phenomenon is realized under the condition of low humidity, the negative photoconduction phenomenon is realized under the condition of high humidity, the condition of low humidity comprises a vacuum condition, or the temperature is higher than 73 ℃ during heating, and the condition of high humidity comprises the room temperature condition, or the temperature is lower than 73 ℃ during heating. The nano diamond-based detector realizes the adjustability of positive and negative photoconduction characteristics, and in addition, the low price and excellent performance of the nano diamond also ensure that the nano diamond-based photoelectric detector has low cost and excellent performance.
Description
Technical Field
The invention relates to the technical field of photoelectric detectors, in particular to a nano diamond-based detector with adjustable positive and negative photoconductive characteristics and a preparation method thereof.
Background
The photoelectric detector can convert optical signals into electric signals and has important application in the aspects of sensing, photoelectric display, imaging, environmental monitoring, space exploration, national defense, military and the like. The photodetectors can be classified into two broad categories according to the photoconductive characteristics exhibited by the devices under illumination: one is a positive photoconductive detector; the other is a negative photoconductive detector. Most photodetectors are positive photoconductive detectors, i.e., the current in light (photocurrent) is greater than the current in dark conditions (dark current), and generally, positive photoconductive devices are based primarily on the photoelectric effect. While negative photovoltaic devices are in contrast to positive photoconductive devices, the photocurrent of such devices is less than the dark current, and the mechanisms by which this phenomenon occurs need to be further explored. In addition, none of the photodetectors can exhibit both positive and negative photoconduction.
Conventional photodetectors are designed based on semiconductor materials, such as silicon-based photodetectors, gallium oxide-based photodetectors, aluminum nitride-based photodetectors, and the like. Under illumination, electrons in the valence band of the semiconductor materials are excited to the conduction band, the carrier concentration is increased, and directional current is formed under the action of external bias. Most of the traditional semiconductor materials are not resistant to high temperature, acid and alkali, high pressure and the like, and the application of the traditional semiconductor materials is limited due to the disadvantages. Diamond, as an ultra-wide bandgap semiconductor, remains stable under a variety of extreme conditions. However, the expensive price of diamond greatly increases the cost, and the long growth period is not favorable for the application of diamond in various fields. The nano diamond is one kind of diamond, and has high specific surface area, excellent photoelectronic performance, high temperature resistance, high corrosion resistance and other excellent performance. In addition, the nano-diamond has low production cost and fast period, is beneficial to the application of the nano-diamond in various fields, and can be prepared into photoelectric detectors working in various extreme environments.
Disclosure of Invention
The invention aims to solve the defects of the traditional photoelectric detector, a positive and negative photoconductivity adjustable photoelectric detector is designed by utilizing the nano-diamond, the nano-diamond based photoelectric detector presents a negative photoconductivity phenomenon under the condition of high humidity environment, and presents a positive photoconductivity phenomenon under the condition of low humidity (heating or vacuum), and the excellent performance and low price of the nano-diamond ensure that the device not only keeps high performance, but also has low cost.
The technical scheme of the invention is realized as follows: a nanometer diamond-based detector comprises a substrate, an interdigital electrode layer and a nanometer diamond layer which are sequentially arranged from bottom to top.
Further, the nanodiamond layer is composed of diamond particles having a particle size of 3 to 5 nm.
Furthermore, the interdigital electrode layer is a gold electrode, and the interdigital distance is 5 μm.
Further, the substrate is an alumina substrate.
Furthermore, the positive and negative photoconduction characteristics of the nano-diamond-based detector are adjustable, the nano-diamond-based detector presents a positive photoconduction phenomenon under the condition of low humidity, and presents a negative photoconduction phenomenon under the condition of high humidity.
Further, the low humidity condition includes a vacuum condition or a temperature higher than 73 ℃ when heating.
Further, the conditions of high humidity include room temperature conditions, or a temperature below 73 ℃ when heated.
A preparation method of a nanometer diamond-based detector with adjustable positive and negative photoconductive characteristics comprises the following steps:
s1, cleaning the substrate;
s2, evaporating a layer of gold on the alumina substrate by adopting a thermal evaporation technology;
s3, etching an interdigital shape on the gold layer obtained in the step (2) by adopting a photoetching technology to obtain an interdigital electrode layer;
s4, dispersing the nano-diamond into water to obtain a nano-diamond aqueous solution;
and S5, spin-coating the nano-diamond aqueous solution obtained in the step (4) on the interdigital electrode layer to obtain the nano-diamond-based detector.
Further, in the step (3), the nano-diamond is dispersed in water, and the concentration of the obtained nano-diamond aqueous solution is 5mg/mL by adopting ultrasonic treatment, and the particle size of the nano-diamond is 3-5 nm.
The positive and negative photoconduction characteristic-adjustable nano diamond-based detector prepared by the preparation method.
The application of the nano-diamond-based detector in a hygrometer is provided.
The invention has the beneficial effects that:
the nano diamond-based photoelectric detector is different from a traditional positive photoelectric detector and a common negative photoconductive detector, can convert a negative photoconductive phenomenon into a positive photoconductive phenomenon under the influence of temperature, and has negative photoelectric characteristics at room temperature and positive photoelectric characteristics under vacuum conditions. In addition, the low price and excellent performance of the nano diamond also enable the nano diamond-based photoelectric detector to be low in cost and excellent in performance.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a nano-diamond-based photodetector with adjustable positive and negative photoconductive characteristics according to the present invention;
FIG. 2 is a test in which the device is left at room temperature in the present invention;
FIG. 3 is a test of the present invention with the device placed under vacuum;
fig. 4 is a test of the light dark current of the nano-diamond based photodetector according to the present invention with increasing temperature.
The electrode comprises a substrate 1, an interdigital electrode layer 2 and a nano diamond layer 3.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without inventive effort based on the embodiments of the present invention, are within the scope of the present invention.
As shown in fig. 1, a nano-diamond based detector comprises a substrate 1, an interdigital electrode layer 2 and a nano-diamond layer 3 which are sequentially arranged from bottom to top, wherein the substrate 1 is an alumina substrate, the interdigital electrode layer 2 is a gold electrode, the interdigital area is 250 x 500 μm, the interdigital distance is 5 μm, and the nano-diamond layer 3 is composed of diamond particles with the particle size of 3-5 nm.
The preparation method of the nano-diamond-based detector with adjustable positive and negative photoconductive characteristics comprises the following steps:
s1, the prepared alumina substrate was cut to an appropriate size (1.5 × 1.5 cm). Cleaning (ultrasonic cleaning with acetone, alcohol and deionized water respectively) for subsequent steps.
S2, evaporating a layer of gold on the alumina substrate by using a thermal evaporation technology to prepare for etching the interdigital electrode, wherein the specific method comprises the following steps:
(1) firstly, ultrasonically cleaning a double-polished aluminum oxide substrate in deionized water, alcohol and acetone solution for 10min respectively.
(2) The alumina substrate was transferred to a vacuum evaporation station and evacuated in preparation for evaporation of gold.
(3) And taking out the sample after 5min of evaporation.
S3, etching the gold layer on the aluminum oxide substrate into an interdigital shape by utilizing the photoetching technology to obtain an interdigital electrode layer, wherein the specific method comprises the following steps:
(1) firstly, blowing the aluminum oxide substrate with the gold layer by using a nitrogen gun, then, uniformly coating the aluminum oxide substrate with photoresist, wherein the conditions of spin-coating the photoresist are firstly 20s, 600r/s, then 50s and 5000 r/s;
(2) pre-baking: heating the alumina substrate which is coated with the photoresist by spin coating for 90s at 115 ℃;
(3) photoetching: carrying out exposure treatment by using an ultraviolet lithography machine and a prepared mask plate, wherein the exposure time is 10 s;
(4) and (3) developing: developing the exposed sample in a developing solution for 40s, washing the sample with deionized water after a pattern appears, removing the residual developing solution, and finally drying with nitrogen;
(5) post-baking: the developed sample was heated at 115 ℃ for 30 s.
S4, the nanodiamond was dispersed in water (concentration 5mg/mL) and subjected to ultrasonication (30 minutes).
S5, spin-coating the prepared nano-diamond aqueous solution on the prepared interdigital electrode to obtain the nano-diamond based detector, wherein the specific method comprises the following steps:
(1) blowing the prepared interdigital electrode clean by a nitrogen gun;
(2) placing the interdigital electrode into a sucker of a spin coater to suck firmly;
(3) dripping the prepared nano-diamond aqueous solution on the interdigital electrode;
(4) spin coating: the low speed 50r/s is used for spin coating for 20s, and the high speed 200r/s is used for spin coating for 10 s.
The photoelectric characteristic test at room temperature of the nano-diamond-based photoelectric detector with adjustable positive and negative photoconductive properties: the nano-diamond-based photodetector was tested at room temperature using a semiconductor analyzer 4200, and the test results are shown in fig. 2. As can be seen from fig. 2, the photocurrent of the nanodiamond-based photodetector is smaller than the dark current, i.e., the device exhibits negative photoconductive characteristics.
Under the condition of room temperature, the negative photoconduction principle of the nano-diamond-based photoelectric detector is as follows:
in the invention, the nano-diamond used by the nano-diamond based detector is synthesized by a detonation method, and a certain amount of amorphous carbon exists on the surface of the nano-diamond, and the surface of the amorphous carbon is not smooth and has low crystallinity, so that water molecules in the air can be easily adsorbed. That is, there are many water molecules on the surface of the nano-diamond particles, which increases the conductivity of the nano-diamond. Therefore, under the condition of no illumination, the current of the detector is larger due to water adsorption, after the light is added, the photo-thermal effect of the light can cause the water desorption on the surface of the nano-diamond, after the water desorption, the conductivity of the nano-diamond is reduced, and the nano-diamond shows that the photocurrent of the nano-diamond based detector is reduced in a macroscopic view, so that the negative photoconduction phenomenon is presented.
Preferably, in order to make the nano-diamond based detector exhibit the positive photoconductivity phenomenon, all that is needed is to make the negative photoconductivity phenomenon of the device disappear, and therefore, water molecules on the surface of the nano-diamond on the detector need to be removed. In the invention, the nano-diamond-based photoelectric detector is placed in vacuum to explore the positive photoconductivity characteristic of the detector. The test results are shown in fig. 3. The photocurrent of the nano-diamond-based photodetector is larger than dark current, i.e. the device exhibits positive photoconductive characteristics.
The positive photoconduction principle of the nano-diamond-based photoelectric detector is as follows:
in the invention, after the nano-diamond-based photoelectric detector is placed in vacuum, no water molecules are adsorbed by nano-diamond particles in the detector. Under the condition, after the nano-diamond is illuminated, electrons in a valence band can be excited to a conduction band, the carrier concentration is improved, and current is formed under the condition of external bias voltage. Macroscopically, the photocurrent of the detector is larger than the dark current, and the positive photoconduction phenomenon occurs.
Preferably, in order to realize the adjustable positive and negative photoconduction characteristic of the nano-diamond-based photodetector, the nano-diamond-based photodetector is placed on a heating table by a heating method, and is subjected to a heating test, so that a part of water molecules are desorbed due to the increase of the temperature, and the performance of the detector is further adjusted and controlled. The test results are shown in fig. 4, from which it can be seen that the detector shows a transition from a negative photo-electric phenomenon to a positive photo-electric phenomenon during a temperature change from 40 degrees celsius to 150 degrees celsius, the negative photo-electric phenomenon being approximately before 73 degrees celsius and the positive photo-electric phenomenon being approximately after 73 degrees celsius.
The principle of positive and negative photoconduction characteristics of the temperature-controlled nano diamond-based photoelectric detector is as follows:
in the present invention, there are two kinds of currents, surface current I, of the nanodiamond particles usedsAnd an internal current Ii。IsPerformance ofFor negative photoconductive characteristics, IiExhibiting positive photoelectric characteristics. At a lower temperature, since the nanodiamond particles adsorb water molecules, IsIs far greater than IiIn the light, though IsDecrease of IiIs increased, but at this time IsIs still far greater than IiThus, macroscopically, the detector exhibits a negative photoconductive phenomenon. When the temperature rises to about 73 ℃, the water molecules adsorbed on the surface of the nano-diamond are greatly reduced, IsReduced to and IiA small difference, under illumination, IsReduced current value and IiThe increased values are not much different, and the current is almost unchanged before and after the detector is illuminated macroscopically. When the temperature continues to rise, the water molecules continue to desorb, IsContinues to decrease, at this time IsIs less than IiUnder light irradiation IsDecrease of IiAnd the detector is enlarged and shows a positive photoelectric phenomenon on a macroscopic scale.
The nanometer diamond-based photoelectric detector can detect light, and current values of devices are different according to different humidity in the environment, so that the nanometer diamond-based photoelectric detector can be applied to a hygrometer.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (10)
1. A nanodiamond-based probe, comprising: the nano-diamond substrate comprises a substrate, an interdigital electrode layer and a nano-diamond layer which are sequentially arranged from bottom to top.
2. A nanodiamond-based probe according to claim 1, wherein: the nano diamond layer is composed of diamond particles with the particle size of 3-5 nm.
3. A nanodiamond-based probe according to claim 1, wherein: the interdigital electrode layer is a gold electrode, and the interdigital distance is 5 mu m.
4. A nanodiamond-based probe according to claim 1, wherein: the substrate is an alumina substrate.
5. A nanodiamond-based probe according to any one of claims 1-4, wherein: the positive and negative photoconduction characteristics of the nano-diamond-based detector are adjustable, the nano-diamond-based detector presents a positive photoconduction phenomenon under the condition of low humidity, and presents a negative photoconduction phenomenon under the condition of high humidity.
6. A nanodiamond-based probe according to claim 5, wherein: the low humidity condition comprises vacuum condition or heating at a temperature higher than 73 deg.C; conditions with high humidity include room temperature conditions, or temperatures below 73 ℃ when heated.
7. A preparation method of a nanometer diamond-based detector with adjustable positive and negative photoconductive characteristics is characterized by comprising the following steps:
s1, cleaning the substrate;
s2, evaporating a layer of gold on the alumina substrate by adopting a thermal evaporation technology;
s3, etching an interdigital shape on the gold layer obtained in the step (2) by adopting a photoetching technology to obtain an interdigital electrode layer;
s4, dispersing the nano-diamond into water to obtain a nano-diamond aqueous solution;
and S5, spin-coating the nano-diamond aqueous solution obtained in the step (4) on the interdigital electrode layer to obtain the nano-diamond-based detector.
8. The method of claim 9, wherein: in the step (3), the nano-diamond is dispersed in water, and the concentration of the obtained nano-diamond aqueous solution is 5mg/mL by adopting ultrasonic treatment, and the particle size of the nano-diamond is 3-5 nm.
9. The nano-diamond-based detector with adjustable positive and negative photoconductive characteristics, which is prepared by the preparation method of claim 7 or 8.
10. Use of the nanodiamond-based detector of any one of claims 1-6 and 9 in a hygrometer.
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| CN114190923A (en) * | 2021-09-18 | 2022-03-18 | 陕西科技大学 | Bio-based full-fiber self-powered multifunctional electronic skin and preparation method thereof |
| CN114190923B (en) * | 2021-09-18 | 2023-12-26 | 陕西科技大学 | Bio-based all-fiber self-powered multifunctional electronic skin and preparation method thereof |
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