CN113035749B - Cleaning control method of semiconductor process chamber and semiconductor process chamber - Google Patents
Cleaning control method of semiconductor process chamber and semiconductor process chamber Download PDFInfo
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- CN113035749B CN113035749B CN202110230759.9A CN202110230759A CN113035749B CN 113035749 B CN113035749 B CN 113035749B CN 202110230759 A CN202110230759 A CN 202110230759A CN 113035749 B CN113035749 B CN 113035749B
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- 238000000034 method Methods 0.000 title claims abstract description 200
- 238000004140 cleaning Methods 0.000 title claims abstract description 194
- 230000008569 process Effects 0.000 title claims abstract description 157
- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 238000005108 dry cleaning Methods 0.000 claims abstract description 41
- 238000003860 storage Methods 0.000 claims description 22
- 230000000873 masking effect Effects 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 abstract description 23
- 239000000047 product Substances 0.000 description 22
- 239000006227 byproduct Substances 0.000 description 15
- 239000007789 gas Substances 0.000 description 10
- 238000010926 purge Methods 0.000 description 4
- 230000002411 adverse Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000013049 sediment Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 239000012459 cleaning agent Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Automation & Control Theory (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention provides a cleaning control method of a semiconductor process chamber, wherein the semiconductor process chamber comprises a process chamber for processing a wafer, and the method comprises the following steps: and recording the processing count of the processing chamber for processing the workpiece to be processed, and controlling the processing chamber to perform cleaning in the work order and resetting the processing count when the processing count is greater than or equal to a preset number threshold corresponding to the current work order, wherein the cleaning in the work order is to perform first dry cleaning with a first process formula on the processing chamber moving out of the workpiece to be processed. According to the invention, when the processing count of the process chambers reaches the preset number threshold, the control device can control the process chambers to carry out cleaning in the work order, and once the processing is completed for a plurality of wafers, the cleaning in the work order is started, so that the chamber environments where all the wafers in the same work order are processed are kept consistent as much as possible, and the consistency among the product sheets of the same work order is improved. The invention also provides a semiconductor process chamber.
Description
Technical Field
The invention relates to the field of semiconductor process chambers, in particular to a cleaning control method of a semiconductor process chamber and the semiconductor process chamber.
Background
In the continuous production process of wafers, there is a close relationship between the process stability of the plasma etching apparatus and the product yield of the wafers. During the etching process, a large amount of byproducts are usually generated, a large part of the byproducts are carried away by the air exhaust pipeline, a small part of the byproducts are deposited on the inner wall of the chamber, and along with the continuous deposition of the residual byproducts, the subsequent process is affected, so that the process result is not repeated, and therefore, a chamber cleaning link is usually required to be added after each batch of wafers (such as all wafers corresponding to each work order) are processed, namely, a certain amount of gas is introduced into the chamber, and the byproducts are removed through radio frequency ignition.
However, when cleaning between worksheets by existing chamber cleaning schemes, there is often a problem in that the quality of the product is unstable, and consistency between product pieces is poor.
Disclosure of Invention
The invention aims to provide a cleaning control method of a semiconductor process chamber and the semiconductor process chamber, which can improve consistency among product pieces.
To achieve the above object, as one aspect of the present invention, there is provided a cleaning control method of a semiconductor process chamber for processing a workpiece to be processed, the cleaning control method comprising:
Recording a processing count of the processing chamber for processing a workpiece to be processed, and controlling the processing chamber to perform in-work-order cleaning and resetting the processing count when the processing count is greater than or equal to a preset number threshold corresponding to a current work order, wherein the in-work-order cleaning is a first dry cleaning with a first process formula for the processing chamber moving out of the workpiece to be processed.
Optionally, the process chamber cleans the workpiece to be processed in batches, and the cleaning control method further comprises: before the process chamber starts to clean the workpieces to be processed in the current batch, a work order corresponding to the workpieces to be processed in the current batch is acquired, and the work order comprises preset quantity threshold information.
Optionally, the semiconductor process chamber further includes a cleaning wafer storage device for storing a cleaning wafer for masking a chuck in the process chamber, the work order further includes cleaning wafer selection information, and the cleaning control method further includes:
When the cleaning sheet selection information in the work order is affirmative, after the cleaning sheet in the cleaning sheet storage device is placed on the chuck, the process chamber is controlled to receive the cleaning sheet in the cleaning sheet storage device and clean the work order;
and when the cleaning sheet selection information in the work order is negative information, controlling the process chamber to directly clean the inside of the work order.
Optionally, the work order further includes dry cleaning selection information, and after cleaning in the work order, the method further includes:
And when the dry cleaning selection information in the work order is positive information, controlling the process chamber to carry out second dry cleaning with a second process formula after the process chamber finishes cleaning in the work order.
Optionally, the work order further includes cleaning sheet selection information, and the second dry cleaning further includes:
And when the cleaning sheet selection information in the work order is affirmative, after the cleaning sheet in the cleaning sheet storage device is placed on the chuck, controlling the process chamber to receive the cleaning sheet in the cleaning sheet storage device and performing third dry cleaning with a third process formula.
Optionally, the work order further includes cleaning piece number information, and the cleaning control method includes: and controlling the process chamber to sequentially receive the corresponding number of cleaning sheets in the cleaning sheet storage device according to the cleaning sheet number information and performing the third dry cleaning for the corresponding number of times.
Optionally, the semiconductor process chamber further comprises a gas supply assembly, and the cleaning in the work order comprises: and receiving the cleaning gas provided by the gas supply assembly to clean components in a process chamber in the process chamber through the cleaning gas.
Optionally, the cleaning control method includes counting the number of times the cleaning sheets are used, and controlling the cleaning sheet storage device to replace a new batch of cleaning sheets when the number of times the cleaning sheets are used exceeds a threshold.
Optionally, the work order further includes cleaning control information, and the cleaning control method includes:
when the cleaning control information in the work order is affirmative, starting to record the processing count, and when the processing count is greater than or equal to a preset quantity threshold value, controlling the process chamber to clean the work order and resetting the processing count;
And when the cleaning control information in the work order is negative information, keeping the processing count unchanged.
As a second aspect of the present invention, there is provided a semiconductor process chamber comprising a process chamber for processing a wafer and control means for controlling the process chamber to perform a semiconductor process, the control means being adapted to implement the cleaning control method described above.
In the cleaning control method and the semiconductor process chamber provided by the embodiment of the invention, when the processing count of the process chamber reaches the preset number threshold, the control device can control the process chamber to perform cleaning in the work order, namely, cleaning in the work order is started once when processing a plurality of wafers, so that the chamber environments where all the wafers in the same work order are processed are kept consistent as much as possible, and further, the stability of the processing quality of the wafers and the consistency among the product pieces of the same work order are improved.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate the invention and together with the description serve to explain, without limitation, the invention. In the drawings:
fig. 1 is a flowchart of a method for controlling cleaning of a semiconductor process chamber according to an embodiment of the present invention.
Detailed Description
The following describes specific embodiments of the present invention in detail with reference to the drawings. It should be understood that the detailed description and specific examples, while indicating and illustrating the invention, are not intended to limit the invention.
The inventor of the present invention has found after research that the reason for the poor consistency between the product pieces is mainly that by-products are continuously deposited in the completion process of the work order, so that there is a large difference between the chamber environments where the product pieces processed first and the product pieces processed later in the work order are located, and the difference is particularly obvious when the number of wafers contained in the work order is large (for example, the same work order contains tens of product pieces). After the execution of the previous work order is completed, in order to restore the environment in the process chamber to the state before the execution of the previous work order, the system task needs to be set for the machine again before the execution of the current work order, the environment restoration task of the run season job chamber is added before the execution task of the current work order, and the wafer required by the environment restoration process of the chamber is moved from the outside of the machine, so that the efficiency of the machine is low.
To solve the above-mentioned problems, as a first aspect of the present invention, there is provided a cleaning control method of a semiconductor process chamber for processing a workpiece (e.g., a wafer) to be processed, the method comprising:
and recording the processing count of the processing chamber to process the workpiece to be processed, and controlling the processing chamber to perform in-job-ticket cleaning (ILC) and resetting the processing count when the processing count is greater than or equal to a preset number threshold corresponding to the current work-ticket, wherein the in-job-ticket cleaning is to perform first dry cleaning (dry cleaning) with a first process formula on the processing chamber moving out of the workpiece to be processed.
It should be noted that, the preset number threshold is smaller than the number of workpieces to be processed corresponding to each work order, for example, the preset number threshold may be 2 or 3 equal numbers, and the cleaning control method may be completed by a corresponding control device in the semiconductor process chamber. In the cleaning control method for the semiconductor process chamber provided by the embodiment of the invention, when the processing count of the process chamber reaches the preset number threshold, the control device can control the process chamber to perform intra-work-order cleaning, namely, in the processing process of the same work-order (same batch) of workpieces to be processed, each time a plurality of (preset number threshold) workpieces to be processed are processed, the intra-work-order cleaning is started, so that the chamber environments where all the workpieces to be processed in the same work-order are located are kept as consistent as possible, and the stability of the processing quality of the workpieces to be processed and the consistency among product pieces of the same work-order are improved. In addition, in the embodiment of the invention, the environment of the cavity is restored by cleaning every other preset number of threshold values of the workpieces to be processed in the work orders, the difference between the environment of the cavity before and after each work order is executed is extremely small (the environment of the process cavity before each work order is ideally consistent with that of the process cavity after all the work orders are executed), and adverse byproducts of the next work order are not excessively left in the process cavity after the previous work order is executed, so that the environment restoration task of run season job cavity aiming at the previous work order is not required to be additionally added among different work orders, and the machine efficiency is further improved.
The present inventors have also found in the study that when the process chambers clean the workpieces to be processed in batches, the types of film layers etched or deposited on the workpieces in different work orders (batches) are different, and the types of gases used for etching or deposition are also different, and the finally produced byproducts are different, so that in the embodiment of the present invention, the different work orders preferably correspond to respective suitable preset number thresholds, and specifically, the method further includes: before a process chamber starts to clean a current batch of workpieces to be processed, a work order corresponding to the current batch of workpieces to be processed is acquired, wherein the work order comprises preset quantity threshold information corresponding to the batch of workpieces to be processed.
In the embodiment of the invention, the control device determines the quantity threshold information corresponding to the workpieces to be processed in different batches according to the worksheets of the workpieces to be processed in different batches, so that the frequency of cleaning in the worksheets can be flexibly adjusted, and the adaptability of the semiconductor process chamber to different processes is improved. The embodiment of the invention does not limit how the control device obtains the work order before the process chamber starts to clean the workpiece to be processed, for example, alternatively, the work order can be obtained by editing the work order by a worker according to the corresponding specification, process, application and other information of each batch of workpieces, and the worker inputs the work order into the control device through a machine operation window. Or when the factory produces workpieces with various specifications in batches, the work order can be automatically selected from a pre-stored work order library by the factory management system, and when the workpieces to be processed in each batch arrive at the machine, the work order is automatically issued to the control device of the machine by the factory management system.
In some embodiments of the present invention, the work order may further include a process recipe (recipe) corresponding to various cleaning and processing processes of the workpiece to be processed, for example, a first process recipe corresponding to the first dry cleaning, and the control device may control the process chamber to receive the corresponding gas, control the corresponding temperature, or perform operations described in other recipes according to information in the process recipe.
The method for cleaning the process chamber in the work order according to the embodiment of the invention is not particularly limited, for example, optionally, the semiconductor process chamber further includes an air supply assembly, and the step of cleaning the process chamber in the work order may include: a purge gas provided by a gas supply assembly is received to purge components in the process chamber with the purge gas.
The embodiment of the invention does not particularly limit how the control device records the processing count of the processing of the workpiece to be processed by the process chamber, for example, alternatively, the control device may comprise a counter.
The inventors of the present invention have also found in research that in the prior art solutions of chamber cleaning between work orders, the process chamber is generally cleaned in a wafer-free state, however, during the cleaning process, some byproducts deposited on the surface of the dielectric window, which are not easy to remove, may fall onto the electrostatic chuck, so that the electrostatic chuck cannot well absorb the subsequent work piece to be processed.
To solve the technical problem, as a preferred embodiment of the present invention, the semiconductor process chamber further includes a cleaning sheet storing device for storing a cleaning sheet for masking a chuck in the process chamber, the work order further includes cleaning sheet selection information, and the method further includes:
When the cleaning sheet selection information in the work order is affirmative, after the cleaning sheet in the cleaning sheet storage device is placed on the chuck, the process chamber is controlled to receive the cleaning sheet in the cleaning sheet storage device and carry out cleaning (ILC) in the work order;
And when the cleaning sheet selection information in the work order is negative information, controlling the process chamber to directly clean the inside of the work order.
The embodiment of the invention does not limit the positive form and the negative form of various information stored in the work order, for example, the positive information can be "yes", "true" or corresponding to the number "1", and the like, and correspondingly, the negative information can be "no", "false" or corresponding to the number "0", and the like.
The embodiment of the invention does not particularly limit how the process chamber receives the workpiece to be processed in the cleaning and storing device, and for example, the process chamber can comprise a workpiece conveying mechanism (wafer conveying mechanism) such as a mechanical arm. In order to ensure the shielding function of the cleaning sheet, the cleaning control method further comprises the following steps: the use times of the cleaning sheets are counted, and when the use times of the cleaning sheets exceed the corresponding threshold values, the cleaning sheet storage device is controlled to replace a batch of new cleaning sheets, so that the cleaning sheets in the cleaning sheet storage device are automatically replaced before the use times of the cleaning sheets are excessive and scrapped, and further the technological effect of the cleaning sheets shielding the chuck is ensured.
In the embodiment of the invention, when the cleaning sheet selection information stored in the work order is positive information, the control device can control the process chamber to receive the cleaning sheet (such as waste sheet) stored in the cleaning sheet storage device before cleaning in the work order, so that the cleaning sheet covers the surface of the electrostatic chuck, and the falling sediment is prevented from falling on the electrostatic chuck when the chamber is cleaned, and the falling sediment is conveyed out of the process chamber along with the cleaning sheet after the process chamber is cleaned, thereby improving the stability of the process chamber.
In order to further improve the stability of the processing technology of the workpiece to be processed, preferably, the work order further includes dry cleaning selection information, and the method further includes:
and when the dry cleaning selection information in the work order is affirmative, controlling the process chamber to perform a second dry cleaning WLAC with a second process recipe after the process chamber completes cleaning in the work order.
In the embodiment of the invention, when the dry cleaning selection information stored in the work order is affirmative, the control device can control the process chamber to carry out the second dry cleaning WLAC after the cleaning in the work order is completed, and further remove the cleaning agent or the particulate matters remained in the cleaning in the work order, thereby further improving the stability of the processing technology of the workpiece to be processed.
In order to improve the cleaning efficiency in the work order, preferably, after each product piece completes the processing technology and before the process chamber performs the cleaning in the work order, dry cleaning can be independently performed for one time to primarily remove byproducts in the process chamber, specifically, the work order can further include independent cleaning selection information corresponding to each workpiece to be processed in the work order, and the method further includes:
When the independent cleaning selection information corresponding to the current workpiece to be processed is positive information, the process chamber is controlled to carry out dry cleaning after the process chamber completes the processing task of the workpiece to be processed.
In order to further avoid that the by-products left during the processing of the previous workpiece to be processed affect the processing process of the subsequent workpiece to be processed, the method preferably further comprises controlling the process chamber to perform a thorough cleaning or resetting process after the process chamber has completed each work order cleaning and second dry cleaning WLAC task, and in order to avoid that the process affects the electrostatic chuck, the process preferably covers the electrostatic chuck by a cleaning sheet, in particular:
The work order further includes cleaning sheet selection information, and the second dry cleaning WLAC further includes:
when the cleaning sheet selection information in the work order is affirmative, after the cleaning sheet in the cleaning sheet storage device is placed on the chuck, the process chamber is controlled to receive the cleaning sheet (Dummy wafer) in the cleaning sheet storage device and perform a third dry cleaning Dummy with a third process recipe.
In view of the difference between the difficulty in removing the byproducts generated in the processing process of the workpieces to be processed in different batches, preferably, the work order further includes cleaning sheet number information, and the method includes: and controlling the process chamber to sequentially receive a corresponding number of cleaning sheets in the cleaning sheet storage device according to the cleaning sheet number information and performing third dry cleaning Dummy for a corresponding number of times.
In view of the fact that a portion of the work order may only relate to some process species that have fewer byproducts or less process stability hazards, to improve the production efficiency of the semiconductor process chamber, it is preferable that the work order further include purge control information, the method further comprising:
When the cleaning control information in the work order is affirmative, starting to record the processing count, and when the processing count is greater than or equal to a preset quantity threshold value, controlling the process chamber to clean the work order and reset the processing count;
When the cleaning control information in the work order is negative information, the processing count is kept unchanged.
In the embodiment of the invention, each work order can comprise cleaning control information, so that when the byproducts of the corresponding process of the workpieces to be processed in the current batch are fewer, the control device temporarily closes the cleaning function (namely pausing counting) in the work order, thereby avoiding waste of process time due to meaningless cleaning actions and improving the production efficiency of the semiconductor process chamber.
For the convenience of the skilled person, the invention also provides two specific embodiments of the control device for controlling the operation of the process chamber according to the work order comprising the plurality of selection information.
The characters corresponding to the selection information for each item in the work order (ILC Info) used to control cleaning within the work order are shown in Table 1-1 below:
TABLE 1-1
Fig. 1 is a flow chart showing a control device controlling a process chamber to perform a corresponding process according to each piece of selection information in a work order.
After the product sheet is finished in the processing technology (Wafer Process), the control device judges whether the independent cleaning selection information corresponding to the product sheet is positive information, and when the independent cleaning selection information is positive information, one-step dry cleaning is firstly carried out, and otherwise, the next step is directly carried out.
Then, the control device determines whether to perform intra-job-order cleaning according to the cleaning control information ILC and the preset number threshold ILC limit, and specifically, when the cleaning control information ILC is affirmative (e.g., enable) and the processing Count reaches the preset number threshold ILC limit, controls the process chamber to perform intra-job-order cleaning ILC (first dry cleaning).
After cleaning in the work order, the control device determines whether to perform the second dry cleaning WLAC based on the dry cleaning selection information WLAC.
After the execution of the work order is finished, the control device checks whether the work order hooks the cleaning sheet selection information Dummy, and if so, the control device needs to execute the third dry cleaning Dummy of the times corresponding to the cleaning sheet quantity information Dummy Count; if not, a third dry clean Dummy is not required.
Cleaning sheets (dummy wafers) for performing in-job-ticket cleaning are stored in the cleaning sheet storing apparatus. After the work order starts, if the ILC is needed to be executed, firstly placing the cleaning sheets in the cleaning and storing device on the chuck, then controlling the process chamber to receive the cleaning sheets in the cleaning and storing device and clean the ILC in the work order, and after the using times of the cleaning sheets reach a preset time threshold, unloading (unloading) the cleaning sheets by the machine, and reloading (loading) a new batch of cleaning sheets.
Example 1:
the following tables 1-2 show the work order information corresponding to each batch of work pieces to be processed according to the present embodiment:
TABLE 1-2
Wherein waferless is True (affirmative information), that is, cleaning in the work order without using the cleaning sheet is performed;
WLAC is True, i.e., the second dry cleaning WLAC is performed after the completion of cleaning the ILC in the work order;
dummy is True, i.e., it is necessary to perform the third dry cleaning Dummy after the second dry cleaning WLAC is performed;
The Dummy count is 3, that is, 3 times of third dry cleaning Dummy are required to be performed by using 3 cleaning sheets;
the ILC limit is set to 2, i.e., cleaning the ILC within the work order is performed after each two product pieces are processed.
Example 2:
tables 1-3 below show the work order information corresponding to two batches of workpieces to be processed according to the present embodiment:
Tables 1 to 3
Setting the number of product pieces (workpieces to be processed) of a batch corresponding to a work order 1 (Lot 1, namely, a work order with Lot ID of 1) to be 3, the initial count of a counter to be 0, and the number of product pieces of a batch corresponding to a work order 2 (Lot 2) to be 3, wherein after the two processes are completed, the third dry cleaning is not performed, and the preset number threshold ILC limit is set to be 2; both use the same process chamber PM1 and use the same product wafer processing process recipe M1.
The status of the two work orders executing in sequence is interpreted as follows:
after two product pieces of the work order 1 (Lot 1) are executed, the processing count of the counter is 2, the ILC limit reaches the upper limit, at the moment, the execution of a cleaning formula (ILC RECIPE) in the work order 1 is started, and the counter is cleared;
After the ILC is executed, the second dry cleaning WLAC of the work order 1 is started to be executed;
After the dry cleaning is finished, the counter restarts to count, the last (3 rd) product piece process of the work order 1 is continuously executed, and the processing count is 1 after the processing is finished;
the 3 product sheets of the first batch corresponding to the work order 1 are processed, the work order 1 is finished, and the execution of the work order 2 is started;
The counter continues to record the processing count, as the counter count after the end of the work order 1 is 1 and does not reach ILC Limit, zero clearing is not performed, after the first product piece of the finished work order 2 is executed, the counter is accumulated, the processing count is 2 and reaches ILC Limit, ILC RECIPE of the work order 2 is started to be executed, and the ILC counter is zero cleared;
the logic rules for subsequent execution are the same as described above.
As a second aspect of the present invention, a semiconductor process chamber is provided, which includes a process chamber for processing a workpiece to be processed, and a control device for controlling the process chamber to complete a semiconductor process, where the control device is used to implement the cleaning control method provided by the embodiment of the present invention.
In the semiconductor process chamber provided by the embodiment of the invention, when the processing count of the process chamber reaches the preset number threshold, the control device can control the process chamber to carry out the cleaning in the work order, namely, in the processing process of the work pieces to be processed in the same work order, each time a plurality of work pieces to be processed are processed, namely, one time of cleaning in the work order is started, so that the chamber environments where all the work pieces to be processed in the same work order are located are kept consistent as much as possible, and the stability of the processing quality of the work pieces (wafers) and the consistency among the product pieces of the same work order are improved. In addition, in the embodiment of the invention, the environment of the cavity is restored by cleaning every other preset number of threshold values of the workpieces to be processed in the work orders, the difference between the environment of the cavity before and after each work order is executed is extremely small, and adverse byproducts for the next work order are not excessively left in the process cavity after the previous work order is executed, so that the environment restoration task of run season job cavities for the previous work order is not required to be additionally added among different work orders, and the machine efficiency is further improved.
It is to be understood that the above embodiments are merely illustrative of the application of the principles of the present invention, but not in limitation thereof. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the invention, and are also considered to be within the scope of the invention.
Claims (8)
1. A cleaning control method of a semiconductor process chamber for processing a workpiece to be processed, the semiconductor process chamber including a cleaning sheet storage device for storing a cleaning sheet for masking a chuck in the process chamber, the cleaning control method comprising:
before the process chamber starts to clean the workpieces to be processed in the current batch, acquiring a work order corresponding to the workpieces to be processed in the current batch, wherein the work order comprises preset quantity threshold information and cleaning piece quantity information;
Recording the processing count of the processing work pieces to be processed of the process chamber, and controlling the process chamber to carry out cleaning in the work orders and resetting the processing count when the processing count is larger than or equal to a preset number threshold corresponding to the current work orders, wherein the preset number threshold is smaller than the number of the work pieces to be processed corresponding to each work order; the cleaning in the work order is to perform first dry cleaning with a first process formula on the process chamber from which the workpiece to be processed is removed;
And controlling the process chamber to sequentially receive the corresponding number of cleaning sheets in the cleaning sheet storage device according to the cleaning sheet number information and performing third dry cleaning for the corresponding number of times.
2. The cleaning control method according to claim 1, wherein the work order further includes cleaning sheet selection information, the cleaning control method further comprising:
When the cleaning sheet selection information in the work order is affirmative, after the cleaning sheet in the cleaning sheet storage device is placed on the chuck, the process chamber is controlled to receive the cleaning sheet in the cleaning sheet storage device and clean the work order;
and when the cleaning sheet selection information in the work order is negative information, controlling the process chamber to directly clean the inside of the work order.
3. The cleaning control method according to claim 2, wherein the work order further includes dry cleaning selection information, and the post-cleaning in the work order further includes:
And when the dry cleaning selection information in the work order is positive information, controlling the process chamber to carry out second dry cleaning with a second process formula after the process chamber finishes cleaning in the work order.
4. The cleaning control method according to claim 3, wherein the work order further includes cleaning sheet selection information, and the second dry cleaning further includes:
And when the cleaning sheet selection information in the work order is affirmative, after the cleaning sheet in the cleaning sheet storage device is placed on the chuck, controlling the process chamber to receive the cleaning sheet in the cleaning sheet storage device and performing third dry cleaning with a third process formula.
5. The method of claim 1, wherein the semiconductor process chamber further comprises a gas supply assembly, and wherein the in-recipe cleaning comprises: and receiving the cleaning gas provided by the gas supply assembly to clean components in a process chamber in the process chamber through the cleaning gas.
6. The cleaning control method according to claim 2, characterized in that the cleaning control method includes counting the number of times the cleaning sheet is used, and controlling the cleaning sheet storage device to replace a new batch of cleaning sheets when the number of times the cleaning sheet is used exceeds a threshold value.
7. The cleansing control method according to any one of claims 1 to 6, wherein the work order further includes cleansing control information, the cleansing control method comprising:
when the cleaning control information in the work order is affirmative, starting to record the processing count, and when the processing count is greater than or equal to a preset quantity threshold value, controlling the process chamber to clean the work order and resetting the processing count;
And when the cleaning control information in the work order is negative information, keeping the processing count unchanged.
8. A semiconductor process chamber comprising a process chamber for processing a workpiece to be processed and control means for controlling the process chamber to perform a semiconductor process, characterized in that the control means is adapted to implement a cleaning control method according to any one of claims 1 to 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110230759.9A CN113035749B (en) | 2021-03-02 | 2021-03-02 | Cleaning control method of semiconductor process chamber and semiconductor process chamber |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US5314509A (en) * | 1990-08-29 | 1994-05-24 | Hitachi, Ltd. | Vacuum processing apparatus and operating method therefor |
| US6168672B1 (en) * | 1998-03-06 | 2001-01-02 | Applied Materials Inc. | Method and apparatus for automatically performing cleaning processes in a semiconductor wafer processing system |
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| US20070215180A1 (en) * | 2006-03-15 | 2007-09-20 | Tokyo Electron Limited | Cleaning method of substrate processing equipment, substrate processing equipment, and recording medium for recording program thereof |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5314509A (en) * | 1990-08-29 | 1994-05-24 | Hitachi, Ltd. | Vacuum processing apparatus and operating method therefor |
| US6168672B1 (en) * | 1998-03-06 | 2001-01-02 | Applied Materials Inc. | Method and apparatus for automatically performing cleaning processes in a semiconductor wafer processing system |
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