CN113035679B - Plasma processing device - Google Patents
Plasma processing device Download PDFInfo
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- CN113035679B CN113035679B CN201911346160.0A CN201911346160A CN113035679B CN 113035679 B CN113035679 B CN 113035679B CN 201911346160 A CN201911346160 A CN 201911346160A CN 113035679 B CN113035679 B CN 113035679B
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- shielding piece
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- frequency shielding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32486—Means for reducing recombination coefficient
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
Abstract
The invention discloses a plasma processing device, which comprises: the vacuum reaction chamber is internally provided with an upper electrode and a lower electrode which are oppositely arranged; a spacer surrounding the upper electrode; the radio frequency shielding piece is arranged on the outer side of the isolation ring in a surrounding mode and is connected with the isolation ring; the heating elements are positioned in the radio frequency shielding piece; a plurality of vacuum electrodes respectively connected with the heating body; and one end of each corrugated pipe is connected with the radio frequency shielding piece, and the other end of each corrugated pipe is connected with the top of the reaction cavity. The advantages are that: the isolation ring, the radio frequency shielding piece, the heating body and other parts are combined, so that the isolation ring is always in a high-temperature state in the process, the isolation ring is prevented from being polluted by a polymer, meanwhile, the high-temperature isolation ring can also improve the etching rate of the outer edge area of the wafer by means of high-temperature radiation, the etching rate of the wafer cannot be influenced by the temperature of the isolation ring, and therefore the uniformity of wafer etching is guaranteed.
Description
Technical Field
The invention relates to the field of plasma etching, in particular to a plasma processing device.
Background
In the field of semiconductor manufacturing, plasma etching techniques are generally used to perform processing operations such as etching, deposition, sputtering, etc. on wafers (substrates). In general, there are mainly capacitive coupling type plasma processing apparatuses and inductive coupling type plasma processing apparatuses that operate by a high-frequency discharge system. The capacitively-coupled plasma processing apparatus is generally provided with an upper electrode and a lower electrode facing each other, and these electrodes are usually arranged in parallel. In operation, a wafer to be processed is placed on the lower electrode, a high-frequency power supply for generating plasma is applied to the upper electrode or the lower electrode via the integrator, external electrons of the reaction gas are accelerated by a high-frequency electric field generated by the high-frequency power supply, and a plasma environment is formed between the upper electrode and the lower electrode, so that plasma etching or deposition processing is performed on the wafer.
In capacitively coupled plasma processing apparatus, a spacer ring is typically provided surrounding the upper electrode and exposed to the plasma environment. The isolating ring is arranged at the periphery of the wafer processing environment and is used for isolating plasma so as to prevent the plasma from polluting and damaging the cavity of the vacuum reaction cavity. The isolating ring used in the plasma processing device is generally made of quartz material, has no contact with high-temperature parts in the reaction cavity, and is positioned at the periphery of the wafer. In the process of plasma treatment of a semiconductor substrate, because the temperature of the isolating ring is low, the isolating ring with low temperature generated by-products (most polymers) in the process is easily accumulated on the isolating ring, and the isolating ring can be corroded, deposited or eroded, so that the service life of the isolating ring is reduced; in addition, the low temperature at the isolation ring can also affect the etching rate of the wafer near the outer edge region, and affect the uniformity of the wafer etching.
Disclosure of Invention
The invention aims to provide a plasma processing device which combines the components such as a spacer ring, a radio frequency shielding piece, a heating body and the like, ensures that the spacer ring can be always in a high-temperature state in the wafer processing process, prevents the spacer ring from being polluted by polymer deposition, simultaneously ensures the etching rate of the outer edge area of a wafer, does not influence the etching rate of the wafer due to the temperature of the spacer ring, and ensures the uniformity of wafer etching.
In order to achieve the above purpose, the present invention is realized by the following technical scheme:
a plasma processing apparatus, the apparatus comprising:
the vacuum reaction chamber is internally provided with an upper electrode and a lower electrode, the upper electrode and the lower electrode are oppositely arranged, and a plasma environment is arranged between the upper electrode and the lower electrode;
a spacer ring surrounding the upper electrode and exposed to a plasma environment;
the radio frequency shielding piece is arranged on the outer side of the isolation ring in a surrounding mode and is connected with the isolation ring;
the heating bodies are positioned in the radio frequency shielding piece and used for heating the isolating ring;
the vacuum electrodes are respectively connected with the corresponding heating bodies and supply power for the heating bodies;
and one end of each corrugated pipe is connected with the radio frequency shielding piece, and the other end of each corrugated pipe is connected with the top of the reaction cavity.
Optionally, a side of the spacer away from the upper electrode is a step-like structure, which includes:
an upper end portion disposed around the outer side of the upper electrode;
the lower end part is positioned below the upper end part, and is obtained by outwards diffusing the upper end part from top to bottom, and a transition part is arranged between the lower end part and the upper end part.
Optionally, the radio frequency shield comprises:
the first radio frequency shielding piece is matched with the step-shaped structure at the outer side of the isolating ring, a plurality of grooves are formed in the first radio frequency shielding piece in a surrounding mode, and the grooves are used for accommodating the heating body;
and the second radio frequency shielding piece is positioned on the first radio frequency shielding piece and connected with the first radio frequency shielding piece so as to wrap the heating body in the groove.
Optionally, the connection means between the first radio frequency shield, the second radio frequency shield and the spacer ring comprises welding or connection by mechanical fastening means.
Optionally, the mechanical fastening device is a bolt assembly.
Optionally, the radio frequency shielding piece includes first metal coating and the second metal coating that is located on the first metal coating on the isolating ring surface, the heat-generating body is the heat-generating body coating that is located between first metal coating and the second metal coating, first metal coating with set up first insulating layer between the heat-generating body coating, the second metal coating with set up the second insulating layer between the heat-generating body coating.
Optionally, the first metal coating is a first aluminum coating, and the second metal coating is a second aluminum coating.
Optionally, the material of the heating element coating layer comprises: graphene, carbon nanotubes, nichrome.
Optionally, the material of the isolating ring comprises quartz and ceramic;
the material of the radio frequency shield comprises a metal.
Compared with the prior art, the invention has the following advantages:
(1) The plasma processing device combines the isolating ring, the radio frequency shielding piece, the heating body and other parts, ensures that the isolating ring can be always in a high-temperature state in the wafer processing process, prevents the isolating ring from being polluted by polymer deposition, simultaneously ensures the etching rate of the outer edge area of the wafer, does not influence the etching rate of the wafer due to the temperature of the isolating ring, and ensures the uniformity of wafer etching;
(2) The radio frequency shielding piece constructs a metal conductor shielding electric field for the heating body, so that the heating body can work in a vacuum environment with a radio frequency electric field, and an ignition phenomenon can not occur.
Drawings
FIG. 1 is a schematic view of a plasma processing apparatus according to the present invention;
FIG. 2 is a schematic view of the spacer ring and RF shield configuration of FIG. 1;
fig. 3 is a schematic diagram of an isolation ring and a radio frequency shield according to the present invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that, in this document, the terms "comprises," "comprising," "has," "having," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal device that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal device. Without further limitation, an element defined by the statement "comprising … …" or "comprising … …" does not exclude the presence of additional elements in a process, method, article or terminal device comprising the element.
It is noted that the drawings are in a very simplified form and utilize non-precise ratios for convenience and clarity in aiding in the description of one embodiment of the invention.
Example 1
As shown in fig. 1, a schematic structure of a plasma processing apparatus according to the present invention is shown, the plasma processing apparatus comprising: the vacuum reaction chamber 1001 is formed by enclosing a reaction chamber 1011 and a chamber end cover 1012, an upper electrode 1002 and a lower electrode 1003 are arranged in the vacuum reaction chamber 1001, the upper electrode 1002 is connected with the chamber end cover 1012, and the upper electrode 1002 and the lower electrode 1003 are oppositely arranged, and a plasma environment is arranged between the upper electrode 1002 and the lower electrode 1003. An isolating ring 1005 surrounds the upper electrode 1002 and is exposed to the plasma environment, wherein the isolating ring 1005 is used for isolating the plasma generated in the process to prevent the plasma from polluting the reaction chamber 1011.
The cavity end cap 1012 is provided with a plurality of through holes, the top of the isolating ring 1005 is connected with the cross beam 1009 above the cavity end cap 1012 by a plurality of connectors 1091 penetrating through the through holes of the cavity end cap 1012, and the parts of the connectors 1091 above and below the cavity end cap 1012 (i.e., the parts of the connectors 1091 in and outside the vacuum reaction chamber 1001) are surrounded by corrugated pipes (not shown in the figure) respectively to ensure air tightness. One end of the corrugated pipe positioned outside the vacuum reaction cavity 1001 is connected with the cavity end cover 1012, the other end is connected with the cross beam 1009, one end of the corrugated pipe positioned in the vacuum reaction cavity 1001 is connected with the cavity end cover 1012, and the other end is connected with the isolating ring 1005. The cross beam 1009 is connected with a cylinder, and the cylinder can drive the cross beam 1009 to move up and down relative to the cavity end cover 1012, so as to drive the isolating ring 1005 connected with the cross beam 1009 to move up and down. Wherein the spacer 1005 is made of quartz or ceramic material and the bellows is made of copper. In one embodiment, the spacer 1005 is connected to the cross beam 1009 via three connectors 1091.
In addition, as shown in fig. 1 and 2 in combination, the plasma processing apparatus further includes a radio frequency shielding member 1007, a plurality of heating elements 1006, and a plurality of vacuum electrodes 1008 connected to the heating elements 1006, respectively, the vacuum electrodes 1008 supplying power to the heating elements 1006 for heating thereof.
The radio frequency shielding member 1007 is disposed around the outside of the isolating ring 1005 and is connected to the isolating ring 1005, and the heating element 1006 is disposed around the inside of the radio frequency shielding member 1007, for heating the radio frequency shielding member 1007 and the isolating ring 1005 (the radio frequency shielding member 1007 and the isolating ring 1005 transfer heat through contact). The vacuum electrode 1008 is disposed on the cavity end cap 1012, and a connection line between the vacuum electrode 1008 and the heating element 1006 is surrounded by a bellows (or may not be surrounded by a bellows), one end of which is connected to the radio frequency shielding member 1007, and the other end of which is connected to the cavity end cap 1012 of the vacuum reaction cavity 1001. It should be noted that if the connecting line between the two is not surrounded by the bellows, at least one bellows is included, one end of which is connected to the rf shield 1007, and the other end of which is connected to the cavity end cap 1012 of the vacuum reaction chamber 1001, so as to complete the grounding of the rf shield 1007; bellows also ensures that there is always a connection to the cavity end cap 1012 and the radio frequency shield 1007 as the spacer 1005 moves up and down.
As shown in fig. 2, a schematic structural diagram of the spacer 1005 and the radio frequency shield 1007 in fig. 1 is shown. In this embodiment, the spacer 1005 has a step-like structure on a side away from the upper electrode 1002, and includes: an upper end 1051, a transition portion 1052, and a lower end 1053. The upper end 1051 is disposed around the outer side of the upper electrode 1002, the lower end 1053 is disposed below the upper end 1051, and the upper end 1051 is formed by diffusing outwards from top to bottom (i.e., forming a horn-shaped opening downwards), and a transition portion 1052 is disposed between the upper end 1051 and the lower end.
The radio frequency shield 1007 (see fig. 2) includes: a first radio frequency shield 1071 and a second radio frequency shield 1072. The first rf shielding member 1071 is matched with the stepped structure on the outer side of the isolating ring 1005, and a plurality of grooves are formed in the first rf shielding member 1071 in a surrounding manner, and the grooves are used for accommodating the heating element 1006. The second rf shield 1072 is a plate structure, which is located on the first rf shield 1071 and connected to the first rf shield 1071 to encapsulate the heating element 1006 in the groove. In one embodiment, the upper end surface of the second rf shield 1072 is flush with the upper end surface of the spacer 1005 to keep the workpiece clean. The rf shield 1007 constructs a metal conductor shielding electric field (in a groove) for the heating element 1006, so that the heating element 1006 can work in a vacuum environment with an rf electric field, and no ignition (burning) phenomenon occurs.
The first rf shield 1071, the second rf shield 1072, and the spacer ring 1005 are connected by mechanical fastening means or by welding (e.g., brazing). In one embodiment, the mechanical fastening means is a bolt assembly.
In this embodiment, the heating element 1006 is a heating tube, and the first rf shield 1071 and the second rf shield 1072 are aluminum housings. The isolating ring 1005 is provided with a plurality of bolt holes, the first radio frequency shielding piece 1071 and the second radio frequency shielding piece 1072 are correspondingly provided with a plurality of threaded through holes, and bolts (screws) 1073 are sequentially inserted into the second radio frequency shielding piece 1072, the threaded through holes on the first radio frequency shielding piece 1071 and the bolt holes on the isolating ring 1005 to assemble and connect the three components (the top of the bolts 1073 is level with the top of the second radio frequency shielding piece 1072).
Typically, the lower electrode 1003 comprises a pedestal for supporting the wafer 1004, and a rf power source is coupled to and supplies rf power to the pedestal, which includes an electrostatic chuck (not shown) on which the wafer 1004 is placed. A vacuum pump for evacuating is connected below the reaction chamber 1011, and the connection (pumping port) between the vacuum pump and the reaction chamber 1011 is located in the range surrounded by the spacer 1005, so that the vacuum pump can discharge the reaction byproducts out of the vacuum reaction chamber 1001 during the operation. A wafer transfer door is disposed on the side wall of the reaction chamber 1011 for transferring the wafer 1004 between the inside and outside of the vacuum reaction chamber 1001. The upper electrode 1002 comprises a gas spraying device, the gas spraying device is connected with a gas supply device outside the vacuum reaction chamber 1001, and the reaction gas in the gas supply device enters the vacuum reaction chamber 1001 through the gas spraying device.
In one embodiment, the connection between the vacuum pump and the reaction chamber 1011 is located directly below the transition portion 1052 of the spacer 1005, the inner side of the transition portion 1052 is in a slope structure, and the lower surface of the first rf shield 1071 is lower than the lower surface of the lower end 1053 of the spacer 1005, so that the vacuum pump can conveniently discharge the reaction byproducts out of the vacuum reaction chamber 1001, which also increases the diffusion space of the plasma in the process, and enhances the uniformity of the wafer processing.
When the wafer 1004 is processed by the plasma processing apparatus, the cylinder is used to drive the beam 1009 to move upwards, and the spacer 1005 is driven to move upwards, so that the wafer 1004 is transferred from the outside of the vacuum reaction chamber 1001 to the inside of the vacuum reaction chamber 1001 through the transfer door. After the wafer 1004 is placed on the electrostatic chuck, the beam 1009 is driven to move downwards by adopting the air cylinder, and the isolating ring 1005 is driven to move downwards so as to isolate plasma in the working process, thus preventing the plasma from polluting the reaction cavity 1011.
The rf power of the rf power source is applied to the susceptor, and an electric field is generated in the vacuum reaction chamber 1001 to dissociate the reactive gas into plasma, and the plasma contains a large amount of active particles such as electrons, ions, atoms in an excited state, molecules, free radicals, and the like, and the active particles can react with the surface of the wafer 1004 to be processed in various physical and chemical ways, so that the morphology of the surface of the wafer 1004 is changed, and the etching process is completed. The connection of the vacuum pump to the reaction chamber 1011 is in the plasma environment surrounded by the spacer 1005 to facilitate the evacuation of gaseous by-products generated during the reaction out of the vacuum reaction chamber 1001.
In addition, during the etching process of the wafer 1004, the vacuum electrode 1008 provides a power source for the heating element 1006 to start heating, so that the temperature of the radio frequency shielding member 1007 is raised, and the radio frequency shielding member 1007 transfers heat to the isolating ring 1005 through contact, so as to heat the isolating ring 1005. Therefore, in the processing process, the spacer 1005 is also in a high temperature state, and gas byproducts (most polymers) generated in the processing process can not be deposited on the spacer 1005 and accumulated on the spacer 1005, so that pollution to the spacer 1005 and the cavity environment is avoided, and the high temperature at the spacer 1005 can not influence the etching rate of the wafer 1004 near the outer edge area, so that the etching uniformity of the wafer 1004 is not influenced.
Example two
Based on the structural characteristics of the plasma processing apparatus in the first embodiment, the present embodiment makes some changes to the structures of the isolation ring 2005 and the rf shield 2007, and mainly makes changes to the structure of the rf shield 2007. As shown in fig. 3, the plasma processing apparatus according to the present embodiment is a schematic structural view of the isolation ring 2005 and the rf shield 2007.
The side of the isolating ring 2005 far from the upper electrode is in a circular arc structure, and the structure of the side (inner side) near the upper electrode is similar to that in the first embodiment, the isolating ring 2005 comprises: an upper end 2051, a transition portion 2052, and a lower end 2053. The upper end portion 2051 is disposed around the outer side of the upper electrode, the lower end portion 2053 is located below the upper end portion 2051, the inner side surface of the upper end portion 2051 is extended and spread outwards from top to bottom to obtain the inner side surface (the isolation ring 2005 is downward and has a horn opening) of the lower end portion 2053, and a transition portion 2052 is provided therebetween. In this embodiment, the connection (the pumping hole) between the vacuum pump and the reaction chamber is located directly below the transition portion 2052, the inner side of the transition portion 2052 is of a slope-shaped structure, and the inner side of the lower end portion 2053 is of a step-shaped structure, so that the vacuum pump can conveniently discharge the reaction byproducts out of the vacuum reaction chamber, and the space enclosed by the isolation ring 2005 is increased, so that the plasma diffusion range in the process is increased, and the processing of the wafer is facilitated.
The radio frequency shield 2007 includes a first metal plating layer 2071 on an outer surface of the spacer 2005 and a second metal plating layer 2072 on the first metal plating layer 2071, and the heat-generating body 2006 is a heat-generating body coating layer (heat-generating body plating layer) 2006 between the first metal plating layer 2071 and the second metal plating layer 2072. An electric field shielding space is formed between the first metal plating layer 2071 and the second metal plating layer 2072, which can effectively ensure that the heating element coating 2006 is in a vacuum environment and does not generate ignition (arcing) in an environment with a radio frequency electric field, thereby ensuring the normal operation of the heating element coating 2006.
Further, a first insulating layer is provided between the first metal plating layer 2071 and the heating element coating 2006, and a second insulating layer is provided between the second metal plating layer 2072 and the heating element coating 2006. The heating element coating 2006 is surrounded by the first insulating layer and the second insulating layer so that the heating element coating 2006 is not in contact with the outside and is in an electric field shielded environment.
Wherein the heater coating 2006 corresponds to a resistor or conductor, which can be prepared from a commercially available heater paste, specifically, the heater coating 2006 material can comprise: graphene, carbon nanotubes, nichrome. In this embodiment, the first metal plating layer 2071 is a first aluminum coating layer, and the second metal plating layer 2072 is a second aluminum coating layer.
In summary, the plasma processing apparatus of the present invention combines the isolation ring, the rf shield, the heater, and other components, thereby ensuring that the isolation ring is always in a high temperature state during the wafer processing process, preventing the isolation ring itself from being contaminated by polymer deposition during the process, and simultaneously, the high temperature isolation ring can enhance the etching rate of the outer edge region of the wafer by means of high temperature radiation, and the etching rate of the wafer is not affected by the temperature of the isolation ring, so as to ensure the uniformity of wafer etching.
While the present invention has been described in detail through the foregoing description of the preferred embodiment, it should be understood that the foregoing description is not to be considered as limiting the invention. Many modifications and substitutions of the present invention will become apparent to those of ordinary skill in the art upon reading the foregoing. Accordingly, the scope of the invention should be limited only by the attached claims.
Claims (9)
1. A plasma processing apparatus, comprising:
the vacuum reaction chamber is internally provided with an upper electrode and a lower electrode, the upper electrode and the lower electrode are oppositely arranged, and a plasma environment is arranged between the upper electrode and the lower electrode;
a spacer ring surrounding the upper electrode and exposed to a plasma environment;
the radio frequency shielding piece is arranged on the outer side of the isolation ring in a surrounding mode and is connected with the isolation ring;
the heating bodies are positioned in the radio frequency shielding piece and used for heating the isolating ring;
the vacuum electrodes are respectively connected with the corresponding heating bodies and supply power for the heating bodies;
and one end of each corrugated pipe is connected with the radio frequency shielding piece, and the other end of each corrugated pipe is connected with the top of the vacuum reaction cavity.
2. The plasma processing apparatus according to claim 1, wherein,
one side of the isolating ring, which is far away from the upper electrode, is of a step-shaped structure, and the isolating ring comprises:
an upper end portion disposed around the outer side of the upper electrode;
the lower end part is positioned below the upper end part, and is obtained by outwards diffusing the upper end part from top to bottom, and a transition part is arranged between the lower end part and the upper end part.
3. The plasma processing apparatus of claim 2 wherein the radio frequency shield comprises:
the first radio frequency shielding piece is matched with the step-shaped structure at the outer side of the isolating ring, a plurality of grooves are formed in the first radio frequency shielding piece in a surrounding mode, and the grooves are used for accommodating the heating body;
and the second radio frequency shielding piece is positioned on the first radio frequency shielding piece and connected with the first radio frequency shielding piece so as to wrap the heating body in the groove.
4. The plasma processing apparatus according to claim 3, wherein,
the connection means between the first radio frequency shield, the second radio frequency shield and the spacer ring comprises welding or connection by mechanical fastening means.
5. The plasma processing apparatus according to claim 4, wherein,
the mechanical fastening device is a bolt assembly.
6. The plasma processing apparatus according to claim 1, wherein,
the radio frequency shielding piece comprises a first metal coating on the outer surface of the isolation ring and a second metal coating on the first metal coating, the heating body is a heating body coating between the first metal coating and the second metal coating, a first insulating layer is arranged between the first metal coating and the heating body coating, and a second insulating layer is arranged between the second metal coating and the heating body coating.
7. The plasma processing apparatus according to claim 6, wherein,
the first metal coating is a first aluminum coating, and the second metal coating is a second aluminum coating.
8. The plasma processing apparatus according to claim 6, wherein,
the material of the heating element coating comprises: graphene, carbon nanotubes or nichrome.
9. The plasma processing apparatus according to claim 1, wherein,
the material of the isolation ring comprises at least one of quartz and ceramic;
the material of the radio frequency shield comprises a metal.
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| CN201911346160.0A CN113035679B (en) | 2019-12-24 | 2019-12-24 | Plasma processing device |
| TW109140156A TWI768546B (en) | 2019-12-24 | 2020-11-17 | A plasma treatment device |
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| CN201911346160.0A CN113035679B (en) | 2019-12-24 | 2019-12-24 | Plasma processing device |
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| CN113035679B true CN113035679B (en) | 2023-09-29 |
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| TWI768546B (en) | 2022-06-21 |
| CN113035679A (en) | 2021-06-25 |
| TW202129690A (en) | 2021-08-01 |
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