CN113035410A - PERC back silver paste for high-welding-tension low-activity crystalline silicon solar cell and preparation method thereof - Google Patents
PERC back silver paste for high-welding-tension low-activity crystalline silicon solar cell and preparation method thereof Download PDFInfo
- Publication number
- CN113035410A CN113035410A CN202110331494.1A CN202110331494A CN113035410A CN 113035410 A CN113035410 A CN 113035410A CN 202110331494 A CN202110331494 A CN 202110331494A CN 113035410 A CN113035410 A CN 113035410A
- Authority
- CN
- China
- Prior art keywords
- parts
- silver paste
- solar cell
- crystalline silicon
- silicon solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 125
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 86
- 239000004332 silver Substances 0.000 title claims abstract description 86
- 238000002360 preparation method Methods 0.000 title claims abstract description 57
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 51
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 51
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 51
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 47
- 230000000694 effects Effects 0.000 title claims abstract description 45
- 239000011230 binding agent Substances 0.000 claims abstract description 80
- 238000003466 welding Methods 0.000 claims abstract description 37
- 239000000654 additive Substances 0.000 claims abstract description 30
- 230000000996 additive effect Effects 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- 238000002156 mixing Methods 0.000 claims description 52
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(III) oxide Inorganic materials O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims description 39
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Inorganic materials O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims description 38
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 26
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 claims description 26
- 239000001856 Ethyl cellulose Substances 0.000 claims description 26
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- HVUMOYIDDBPOLL-XWVZOOPGSA-N Sorbitan monostearate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OC[C@@H](O)[C@H]1OC[C@H](O)[C@H]1O HVUMOYIDDBPOLL-XWVZOOPGSA-N 0.000 claims description 26
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 claims description 26
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 26
- 239000004359 castor oil Substances 0.000 claims description 26
- 235000019438 castor oil Nutrition 0.000 claims description 26
- 229910052593 corundum Inorganic materials 0.000 claims description 26
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 claims description 26
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 26
- 229920001249 ethyl cellulose Polymers 0.000 claims description 26
- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 claims description 26
- 229940116411 terpineol Drugs 0.000 claims description 26
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 26
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 24
- 229920006217 cellulose acetate butyrate Polymers 0.000 claims description 18
- 239000000843 powder Substances 0.000 claims description 16
- 238000003723 Smelting Methods 0.000 claims description 13
- 238000000498 ball milling Methods 0.000 claims description 13
- 229910052681 coesite Inorganic materials 0.000 claims description 13
- 238000001816 cooling Methods 0.000 claims description 13
- 229910052906 cristobalite Inorganic materials 0.000 claims description 13
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 13
- 238000001035 drying Methods 0.000 claims description 13
- 238000010791 quenching Methods 0.000 claims description 13
- 230000000171 quenching effect Effects 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- 238000003756 stirring Methods 0.000 claims description 13
- 229910052682 stishovite Inorganic materials 0.000 claims description 13
- 229910052905 tridymite Inorganic materials 0.000 claims description 13
- 239000003981 vehicle Substances 0.000 claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- 238000005096 rolling process Methods 0.000 claims description 10
- 229950011392 sorbitan stearate Drugs 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052760 oxygen Inorganic materials 0.000 abstract description 3
- 239000001301 oxygen Substances 0.000 abstract description 3
- 239000003973 paint Substances 0.000 abstract 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 46
- 239000000203 mixture Substances 0.000 description 34
- 239000011787 zinc oxide Substances 0.000 description 23
- 239000001587 sorbitan monostearate Substances 0.000 description 17
- 235000011076 sorbitan monostearate Nutrition 0.000 description 17
- 229940035048 sorbitan monostearate Drugs 0.000 description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- 238000002161 passivation Methods 0.000 description 10
- 239000002994 raw material Substances 0.000 description 9
- 229920001727 cellulose butyrate Polymers 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- FPEIKXWFKBWWNT-UHFFFAOYSA-N butanoic acid;2-hydroxyacetic acid Chemical compound OCC(O)=O.CCCC(O)=O FPEIKXWFKBWWNT-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- -1 oxygen ions Chemical class 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 229910003069 TeO2 Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229920000180 alkyd Polymers 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000156 glass melt Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a PERC back silver paste for a crystalline silicon solar cell with high welding tension and low activity. The paint comprises the following components in parts by mass: 50-60 parts of microcrystalline silver powder, 0.5-2 parts of inorganic binder, 0.5-1 part of inorganic additive and 37-47 parts of organic carrier. The invention also discloses a preparation method of the PERC back silver paste for the crystalline silicon solar cell with high welding tension and low activity. The invention adopts single valence oxide and low oxygen content oxide to prepare inorganic binder, adds inorganic metal additive, and prepares PERC back silver paste for crystalline silicon solar cell by matching with microcrystalline silver powder and organic carrier, and the back silver paste has the advantages of high welding tension, good weldability, low activity and the like.
Description
Technical Field
The invention relates to a preparation method of a PERC back silver paste for a crystalline silicon solar cell with high welding tension and low activity, in particular to a PERC back silver paste for a crystalline silicon solar cell with high welding tension and low activity and a preparation method thereof, and belongs to the technical field of PERC silver paste for a crystalline silicon solar cell back electrode.
Technical Field
In order to reduce the cost of the crystalline silicon solar cell, the thickness of the silicon wafer is gradually reduced, when the thickness of the silicon wafer is reduced to be smaller than the diffusion length of minority carriers, a large number of dangling bonds on the surface of the silicon wafer become the recombination centers of the silicon wafer, the recombination rate is rapidly improved, and the electrical property of the solar cell is seriously influenced. Different from the conventional solar cell structure, the PERC crystal silicon solar cell can passivate surface suspended bonds by depositing medium passivation layers on the upper surface and the lower surface of a silicon chip, so that the surface recombination of current carriers can be effectively reduced, the effect of back reflection can be achieved, the infrared response is improved, and the effect of improving the photoelectric conversion efficiency is achieved.
PERC back of the body silver thick liquids pass through screen printing on the passivation layer of back, for the passivation effect of furthest's remaining back passive film, back silver thick liquids should not possess the ability of burning through the passive film, and for obtaining good ohmic contact and promoting life, should possess certain welding tension after the back silver thick liquids sintering. Therefore, suitable welding tension and low passivation layer damage are two basic requirements of the PERC battery industry on back silver paste, but the mainstream PERC back silver paste on the market cannot meet the two basic requirements.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides the PERC back silver paste for the crystalline silicon solar cell with high welding tension and low activity, the PERC back silver paste is printed on the back passivation film of the crystalline silicon, the passivation film is still intact after high-temperature sintering, the PERC back silver paste has higher welding tension and better weldability, and the defect that the traditional PERC back silver paste cannot balance the relation between the welding tension and the passivation layer corrosion is overcome.
The second problem to be solved by the invention is to provide a preparation method of the PERC back silver paste for the crystalline silicon solar cell with high welding tension and low activity, and the method has the advantages of simple process, low cost and compatibility with the existing product process.
The PERC back silver paste for the crystalline silicon solar cell with high welding tension and low activity comprises, by mass, 50-60 parts of microcrystalline silver powder, 0.5-2 parts of an inorganic binder, 0.5-1 part of an inorganic additive and 37-47 parts of an organic carrier.
The median diameter of the microcrystalline silver powder is 0.8-1.5 mu m, and the tap density is 2-3.5g/cm3The specific surface area is 1.4-1.8m2/g。
The inorganic binder is prepared from 10-25 parts of SiO by mass230-40 parts of Bi2O35-10 parts of B2O31-5 parts of Al2O310-15 parts of ZnO, 10-20 parts of CuO and 10-15 parts of MnO21-5 parts of ZrO2Is prepared.
The inorganic additive is metal Ni powder or metal Cu powder.
The median diameter of the inorganic additive is 0.9-2 μm.
The organic carrier is prepared from 20-50 parts of terpineol, 15-30 parts of butyl carbitol acetate, 5-20 parts of ethyl cellulose, 5-10 parts of cellulose acetate butyrate, 1-18 parts of butyl carbitol, 1-15 parts of hydrogenated castor oil and 1-8 parts of sorbitan stearate in parts by mass.
A preparation method of PERC back silver paste for a high-welding-tension low-activity crystalline silicon solar cell comprises the following preparation steps:
(1) preparation of inorganic binder: mixing SiO2、Bi2O3、B2O3、Al2O3、ZnO、CuO、MnO2、ZrO2Mixing uniformly according to the proportion, putting into a crucible, smelting at the temperature of 1100-1300 ℃ for 1-2 hours, water quenching and drying, and ball milling for 8-12 hours to obtain an inorganic binder with the median diameter of 0.5-1 mu m;
(2) preparation of organic vehicle: evenly mixing terpineol, butyl carbitol acetate, ethyl cellulose, cellulose acetate butyrate, butyl carbitol, hydrogenated castor oil and sorbitan stearate, keeping the temperature at 80-100 ℃ and stirring for 1.5-3 hours, and cooling to room temperature to obtain a transparent organic binder;
(3) preparing silver paste: and (2) uniformly mixing the microcrystalline silver powder, the inorganic binder prepared in the step (1), the organic carrier prepared in the step (2) and the inorganic additive, and rolling for 6-8 times by using a three-roll grinder to obtain the silver paste with the viscosity of 18-35kcps and the fineness of below 15 microns.
Compared with the prior art, the invention has the following advantages:
1. the glass system is free of the oxygen group element tellurium and the element (such as vanadium) which can generate oxygen ions through valence change reaction in a high-temperature state, and the oxide with low oxygen content is used as the component of the glass system, so that the concentration of silver ions in the glass melt is reduced, and the phenomenon that excessive silver ions generate stronger corrosion effect on a passivation layer is avoided.
2. The addition of boron oxide, zinc oxide and zirconium oxide can reduce the thermal expansion coefficient of a glass system, improve the wettability of glass powder on the surface of a passivation layer and improve the welding tension of the glass powder.
3. The nickel powder and the copper powder are melted at a high temperature and uniformly dispersed on the surface of the silver layer to form a plurality of welding points, and the excellent welding performance of the nickel powder and the copper powder is utilized to improve the weldability of the silver layer and further improve the welding tension of the silver layer.
Detailed Description
The present invention is further described in detail with reference to the specific embodiments, it should be noted that the protection scope of the present invention is not limited to the following embodiments, and those skilled in the art can make several modifications and variations without departing from the technical principle of the present invention, and the modifications and variations should fall within the protection scope of the present invention.
Example 1:
the PERC back silver paste for the crystalline silicon solar cell with high welding tension and low activity comprises, by mass, 60 parts of microcrystalline silver powder, 1 part of an inorganic binder, 1 part of copper powder and 38 parts of an organic carrier.
The median diameter of the microcrystalline silver powder is 0.8 mu m, and the tap density is 3.5g/cm3Specific surface area of 1.8m2/g。
The inorganic binder is prepared from 15 parts of SiO by mass230 parts of Bi2O35 parts of B2O35 parts of Al2O310 parts of ZnO, 20 parts of CuO and 10 parts of MnO25 parts of ZrO2Is prepared.
The inorganic additive is metal Cu powder.
The median diameter of the inorganic additive is 0.9 μm.
The organic carrier is prepared from 50 parts of terpineol, 15 parts of butyl carbitol acetate, 5 parts of ethyl cellulose, 10 parts of cellulose acetate butyrate, 1 part of butyl carbitol, 11 parts of hydrogenated castor oil and 8 parts of sorbitan stearate in parts by mass.
A preparation method of PERC back silver paste for a high-welding-tension low-activity crystalline silicon solar cell comprises the following preparation steps:
(1) preparation of inorganic binder: mixing SiO2、Bi2O3、B2O3、Al2O3、ZnO、CuO、MnO2、ZrO2Mixing the raw materials uniformly according to the proportion, putting the mixture into a crucible, smelting the mixture at 1250 ℃ for 1 hour, water quenching the mixture, drying the mixture, and performing ball milling for 12 hours to obtain an inorganic binder with the median diameter of 0.5 mu m;
(2) preparation of organic vehicle: evenly mixing terpineol, butyl carbitol acetate, ethyl cellulose, butyl carbitol, hydrogenated castor oil, sorbitan monostearate and cellulose butyrate glycolate, keeping the temperature at 85 ℃ and stirring for 3 hours, and cooling to room temperature to obtain a transparent organic binder;
(3) preparing silver paste: and (3) uniformly mixing the microcrystalline silver powder, the inorganic binder prepared in the step (1), the organic carrier prepared in the step (2) and the copper powder, and rolling for 8 times by using a three-roll grinder to obtain the silver paste with the viscosity of 35kcps and the fineness of below 15 microns.
Example 2:
the PERC back silver paste for the crystalline silicon solar cell with high welding tension and low activity comprises, by mass, 58.5 parts of microcrystalline silver powder, 0.5 part of an inorganic binder, 0.5 part of copper powder and 40.5 parts of an organic carrier.
The median diameter of the microcrystalline silver powder is 1 mu m, and the tap density is 3.18g/cm3Specific surface area of 1.6m2/g。
The inorganic binder is prepared from 10 parts of SiO by mass235 parts of Bi2O310 parts of B2O32 parts of Al2O315 parts of ZnO, 11 parts of CuO and 15 parts of MnO22 parts of ZrO2Is prepared.
The inorganic additive is metal Cu powder.
The median diameter of the inorganic additive is 2 μm.
The organic carrier is prepared from 35 parts of terpineol, 30 parts of butyl carbitol acetate, 15 parts of ethyl cellulose, 5 parts of cellulose acetate butyrate, 9 parts of butyl carbitol, 1 part of hydrogenated castor oil and 5 parts of sorbitan monostearate in parts by mass.
A preparation method of PERC back silver paste for a high-welding-tension low-activity crystalline silicon solar cell comprises the following preparation steps:
(1) preparation of inorganic binder: mixing SiO2、Bi2O3、B2O3、Al2O3、ZnO、CuO、MnO2、ZrO2Mixing uniformly according to the proportion, putting into a crucible, smelting at 1250 ℃ for 1.5 hours, water quenching and drying, and ball milling for 11 hours to obtain an inorganic binder with the median diameter of 1 mu m;
(2) preparation of organic vehicle: evenly mixing terpineol, butyl carbitol acetate, ethyl cellulose, cellulose acetate butyrate, butyl carbitol, hydrogenated castor oil and sorbitan monostearate, keeping the temperature at 80 ℃, stirring for 2 hours, and cooling to room temperature to obtain a transparent organic binder;
(3) preparing silver paste: and (3) uniformly mixing the microcrystalline silver powder, the inorganic binder prepared in the step (1), the organic carrier prepared in the step (2) and the copper powder, and rolling for 7 times by using a three-roll grinder to obtain the silver paste with the viscosity of 32kcps and the fineness of below 15 microns.
Example 3:
the PERC back silver paste for the crystalline silicon solar cell with high welding tension and low activity comprises, by mass, 60 parts of microcrystalline silver powder, 2 parts of an inorganic binder, 1 part of copper powder and 37 parts of an organic carrier.
The median diameter of the microcrystalline silver powder is 1.5 mu m, and the tap density is 2g/cm3Specific surface area of 1.4m2/g。
The inorganic binder is prepared from 10 parts of SiO by mass240 parts of Bi2O35 parts of B2O31 part of Al2O310 parts of ZnO, 20 parts of CuO and 13 parts of MnO21 part of ZrO2Is prepared.
The inorganic additive is metal Cu powder.
The median diameter of the inorganic additive is 1 μm.
The organic carrier is prepared from 20 parts of terpineol, 30 parts of butyl carbitol acetate, 20 parts of ethyl cellulose, 7 parts of cellulose acetate butyrate, 18 parts of butyl carbitol, 1 part of hydrogenated castor oil and 4 parts of sorbitan monostearate in parts by mass.
A preparation method of PERC back silver paste for a high-welding-tension low-activity crystalline silicon solar cell comprises the following preparation steps:
(1) preparation of inorganic binder: mixing SiO2、Bi2O3、B2O3、Al2O3、ZnO、CuO、MnO2、ZrO2Mixing the raw materials uniformly according to the proportion, putting the mixture into a crucible, smelting at the temperature of 1100 ℃ for 2 hours, water quenching and drying, and performing ball milling for 8 hours to obtain an inorganic binder with the median diameter of 0.7 mu m;
(2) preparation of organic vehicle: evenly mixing terpineol, butyl carbitol acetate, ethyl cellulose, cellulose acetate butyrate, butyl carbitol, hydrogenated castor oil and sorbitan monostearate, keeping the temperature at 100 ℃ and stirring for 1.5 hours, and cooling to room temperature to obtain a transparent organic binder;
(3) preparing silver paste: and (3) uniformly mixing the microcrystalline silver powder, the inorganic binder prepared in the step (1), the organic carrier prepared in the step (2) and the copper powder, and rolling for 8 times by using a three-roll grinder to obtain the silver paste with the viscosity of 34kcps and the fineness of below 15 microns.
Example 4:
the PERC back silver paste for the crystalline silicon solar cell with high welding tension and low activity comprises, by mass, 50 parts of microcrystalline silver powder, 2 parts of an inorganic binder, 1 part of nickel powder and 47 parts of an organic carrier.
The median diameter of the microcrystalline silver powder is 1.2 mu m, and the tap density is 3g/cm3Specific surface area of 1.5m2/g。
The inorganic binder is prepared from 25 parts of SiO by mass232 parts of Bi2O36 parts of B2O32 parts of Al2O311 parts of ZnO, 10 parts of CuO and 12 parts of MnO22 parts of ZrO2Is prepared.
The inorganic additive is metal Ni powder.
The median diameter of the inorganic additive is 1 μm.
The organic carrier is prepared from 35 parts of terpineol, 16 parts of butyl carbitol acetate, 20 parts of ethyl cellulose, 7 parts of cellulose acetate butyrate, 6 parts of butyl carbitol, 15 parts of hydrogenated castor oil and 1 part of sorbitan monostearate in parts by mass.
A preparation method of PERC back silver paste for a high-welding-tension low-activity crystalline silicon solar cell comprises the following preparation steps:
(1) preparation of inorganic binder: mixing SiO2、Bi2O3、B2O3、Al2O3、ZnO、CuO、MnO2、ZrO2Mixing the raw materials uniformly according to the proportion, putting the mixture into a crucible, smelting the mixture at the temperature of 1300 ℃ for 1 hour, water quenching the mixture, drying the mixture, and performing ball milling for 11 hours to obtain an inorganic binder with the median diameter of 0.6 mu m;
(2) preparation of organic vehicle: evenly mixing terpineol, butyl carbitol acetate, ethyl cellulose, butyl carbitol, hydrogenated castor oil, sorbitan monostearate and cellulose butyrate alkyd acid, keeping the temperature at 90 ℃ and stirring for 3 hours, and cooling to room temperature to obtain a transparent organic binder;
(3) preparing silver paste: and (2) uniformly mixing the microcrystalline silver powder, the inorganic binder prepared in the step (1), the organic carrier prepared in the step (2) and the nickel powder, and carrying out three-roll grinding for 6 times to obtain the silver paste with the viscosity of 18kcps and the fineness of below 15 microns.
Example 5:
the PERC back silver paste for the crystalline silicon solar cell with high welding tension and low activity comprises, by mass, 58 parts of microcrystalline silver powder, 1 part of an inorganic binder, 1 part of nickel powder and 40 parts of an organic carrier.
The median diameter of the microcrystalline silver powder is 0.9 mu m, and the tap density is 3.18g/cm3Specific surface area of 1.66m2/g。
The inorganic binder is prepared from 15 parts of SiO by mass237 parts of Bi2O37 parts of B2O33 parts of Al2O312 parts of ZnO, 15 parts of CuO and 8 parts of MnO23 parts of ZrO2Is prepared.
The inorganic additive is metal Ni powder.
The median diameter of the inorganic additive is 1 μm.
The organic carrier is prepared from 45 parts of terpineol, 17 parts of butyl carbitol acetate, 15 parts of ethyl cellulose, 6 parts of cellulose acetate butyrate, 6 parts of butyl carbitol, 6 parts of hydrogenated castor oil and 5 parts of sorbitan monostearate in parts by mass.
A preparation method of PERC back silver paste for a high-welding-tension low-activity crystalline silicon solar cell comprises the following preparation steps:
(1) preparation of inorganic binder: mixing SiO2、Bi2O3、B2O3、Al2O3、ZnO、CuO、MnO2、ZrO2Mixing the raw materials uniformly according to the proportion, putting the mixture into a crucible, smelting the mixture at 1250 ℃ for 1 hour, water quenching the mixture, drying the mixture, and ball-milling the mixture for 11 hours to obtain an inorganic binder with the median diameter of 0.6 mu m;
(2) preparation of organic vehicle: evenly mixing terpineol, butyl carbitol acetate, ethyl cellulose, butyl carbitol, hydrogenated castor oil, sorbitan monostearate and cellulose butyrate glycolate, keeping the temperature at 85 ℃ and stirring for 1.5 hours, and cooling to room temperature to obtain a transparent organic binder;
(3) preparing silver paste: and (3) uniformly mixing the microcrystalline silver powder, the inorganic binder prepared in the step (1), the organic carrier prepared in the step (2) and the nickel powder, and carrying out three-roll grinding for 8 times to obtain the silver paste with the viscosity of 34kcps and the fineness of below 15 microns.
Example 6:
the PERC back silver paste for the crystalline silicon solar cell with high welding tension and low activity comprises, by mass, 58.5 parts of microcrystalline silver powder, 0.5 part of an inorganic binder, 0.5 part of copper powder and 40.5 parts of an organic carrier.
The median diameter of the microcrystalline silver powder is 1 mu m, and the tap density is 3.18g/cm3Specific surface area of 1.6m2/g。
The inorganic binder is prepared from 12 parts of SiO by mass235 parts of Bi2O35 parts of B2O32 parts of Al2O310 parts of ZnO, 20 parts of CuO and 15 parts of MnO21 part of ZrO2Is prepared.
The inorganic additive is metal Cu powder.
The median diameter of the inorganic additive is 2 μm.
The organic carrier is prepared from 35 parts of terpineol, 30 parts of butyl carbitol acetate, 15 parts of ethyl cellulose, 5 parts of cellulose acetate butyrate, 9 parts of butyl carbitol, 1 part of hydrogenated castor oil and 5 parts of sorbitan monostearate in parts by mass.
A preparation method of PERC back silver paste for a high-welding-tension low-activity crystalline silicon solar cell comprises the following preparation steps:
(1) preparation of inorganic binder: mixing SiO2、Bi2O3、B2O3、Al2O3、ZnO、CuO、MnO2、ZrO2Mixing uniformly according to the proportion, putting into a crucible, smelting at 1250 ℃ for 1.5 hours, water quenching and drying, and ball milling for 11 hours to obtain an inorganic binder with the median diameter of 1 mu m;
(2) preparation of organic vehicle: evenly mixing terpineol, butyl carbitol acetate, ethyl cellulose, cellulose acetate butyrate, butyl carbitol, hydrogenated castor oil and sorbitan monostearate, keeping the temperature at 80 ℃, stirring for 2 hours, and cooling to room temperature to obtain a transparent organic binder;
(3) preparing silver paste: and (3) uniformly mixing the microcrystalline silver powder, the inorganic binder prepared in the step (1), the organic carrier prepared in the step (2) and the copper powder, and rolling for 7 times by using a three-roll grinder to obtain the silver paste with the viscosity of 32kcps and the fineness of below 15 microns.
Comparative example 1:
the PERC back silver paste for the crystalline silicon solar cell with high welding tension and low activity comprises, by mass, 60 parts of microcrystalline silver powder, 1 part of an inorganic binder, 1 part of copper powder and 38 parts of an organic carrier.
The median diameter of the microcrystalline silver powder is 0.8 mu m, and the tap density is 3.5g/cm3Specific surface area of 1.8m2/g。
The inorganic binder is prepared from 15 parts of SiO by mass230 parts of Bi2O35 parts of Al2O310 parts of ZnO, 20 parts of CuO and 10 parts of MnO25 parts of TeO25 parts of ZrO2Is prepared.
The inorganic additive is metal Cu powder.
The median diameter of the inorganic additive is 0.9 μm.
The organic carrier is prepared from 50 parts of terpineol, 15 parts of butyl carbitol acetate, 5 parts of ethyl cellulose, 10 parts of cellulose acetate butyrate, 1 part of butyl carbitol, 11 parts of hydrogenated castor oil and 8 parts of sorbitan stearate in parts by mass.
A preparation method of PERC back silver paste for a high-welding-tension low-activity crystalline silicon solar cell comprises the following preparation steps:
(1) preparation of inorganic binder: mixing SiO2、Bi2O3、Al2O3、ZnO、CuO、MnO2、TeO2、ZrO2Mixing the raw materials uniformly according to the proportion, putting the mixture into a crucible, smelting the mixture at 1250 ℃ for 1 hour, water quenching the mixture, drying the mixture, and performing ball milling for 12 hours to obtain an inorganic binder with the median diameter of 0.7 mu m;
(2) preparation of organic vehicle: evenly mixing terpineol, butyl carbitol acetate, ethyl cellulose, butyl carbitol, hydrogenated castor oil, sorbitan monostearate and cellulose butyrate glycolate, keeping the temperature at 85 ℃ and stirring for 3 hours, and cooling to room temperature to obtain a transparent organic binder;
(3) preparing silver paste: and (3) uniformly mixing the microcrystalline silver powder, the inorganic binder prepared in the step (1), the organic carrier prepared in the step (2) and the copper powder, and rolling for 8 times by using a three-roll grinder to obtain the silver paste with the viscosity of 32kcps and the fineness of below 15 microns.
Comparative example 2:
the PERC back silver paste for the crystalline silicon solar cell with high welding tension and low activity comprises, by mass, 60 parts of microcrystalline silver powder, 1 part of an inorganic binder, 1 part of copper powder and 38 parts of an organic carrier.
The median diameter of the microcrystalline silver powder is 0.8 mu m, and the tap density is 3.5g/cm3Specific surface area of 1.8m2/g。
The inorganic binder is prepared from 15 parts of SiO by mass230 parts of Bi2O35 parts of B2O35 parts of Al2O310 parts of V2O520 parts of CuO and 10 parts of MnO25 parts of ZrO2Is prepared.
The inorganic additive is metal Cu powder.
The median diameter of the inorganic additive is 0.9 μm.
The organic carrier is prepared from 50 parts of terpineol, 15 parts of butyl carbitol acetate, 5 parts of ethyl cellulose, 10 parts of cellulose acetate butyrate, 1 part of butyl carbitol, 11 parts of hydrogenated castor oil and 8 parts of sorbitan stearate in parts by mass.
A preparation method of PERC back silver paste for a high-welding-tension low-activity crystalline silicon solar cell comprises the following preparation steps:
(1) preparation of inorganic binder: mixing SiO2、Bi2O3、B2O3、Al2O3、V2O5、CuO、MnO2、ZrO2Mixing the raw materials uniformly according to the proportion, putting the mixture into a crucible, smelting the mixture at the temperature of 1300 ℃ for 1 hour, water quenching the mixture, drying the mixture, and performing ball milling for 12 hours to obtain an inorganic binder with the median diameter of 0.8 mu m;
(2) preparation of organic vehicle: evenly mixing terpineol, butyl carbitol acetate, ethyl cellulose, butyl carbitol, hydrogenated castor oil, sorbitan monostearate and cellulose butyrate glycolate, keeping the temperature at 85 ℃ and stirring for 3 hours, and cooling to room temperature to obtain a transparent organic binder;
(3) preparing silver paste: and (3) uniformly mixing the microcrystalline silver powder, the inorganic binder prepared in the step (1), the organic carrier prepared in the step (2) and the copper powder, and rolling for 8 times by using a three-roll grinder to obtain the silver paste with the viscosity of 34kcps and the fineness of below 15 microns.
Comparative example 3:
the PERC back silver paste for the crystalline silicon solar cell with high welding tension and low activity comprises, by mass, 60 parts of microcrystalline silver powder, 1 part of an inorganic binder, 0.2 part of copper powder and 38.9 parts of an organic carrier.
The median diameter of the microcrystalline silver powder is 0.8 mu m, and the tap density is 3.5g/cm3Specific surface area of 1.8m2/g。
The inorganic binder is prepared from 15 parts of SiO by mass230 parts of Bi2O35 parts of B2O35 parts of Al2O310 parts of ZnO, 20 parts of CuO and 15 parts of MnO2Is prepared.
The inorganic additive is metal Cu powder.
The median diameter of the inorganic additive is 0.9 μm.
The organic carrier is prepared from 50 parts of terpineol, 15 parts of butyl carbitol acetate, 5 parts of ethyl cellulose, 10 parts of cellulose acetate butyrate, 1 part of butyl carbitol, 11 parts of hydrogenated castor oil and 8 parts of sorbitan stearate in parts by mass.
A preparation method of PERC back silver paste for a high-welding-tension low-activity crystalline silicon solar cell comprises the following preparation steps:
(1) preparation of inorganic binder: mixing SiO2、Bi2O3、B2O3、Al2O3、ZnO、CuO、MnO2Mixing the raw materials uniformly according to the proportion, putting the mixture into a crucible, smelting the mixture at the temperature of 1300 ℃ for 1 hour, water quenching the mixture, drying the mixture, and performing ball milling for 12 hours to obtain an inorganic binder with the median diameter of 0.8 mu m;
(2) preparation of organic vehicle: evenly mixing terpineol, butyl carbitol acetate, ethyl cellulose, butyl carbitol, hydrogenated castor oil, sorbitan monostearate and cellulose butyrate glycolate, keeping the temperature at 85 ℃ and stirring for 3 hours, and cooling to room temperature to obtain a transparent organic binder;
(3) preparing silver paste: and (3) uniformly mixing the microcrystalline silver powder, the inorganic binder prepared in the step (1), the organic carrier prepared in the step (2) and the copper powder, and rolling for 8 times by using a three-roll grinder to obtain the silver paste with the viscosity of 34kcps and the fineness of below 15 microns.
Comparative example 4:
the PERC back silver paste for the crystalline silicon solar cell with high welding tension and low activity comprises, by mass, 60 parts of microcrystalline silver powder, 1 part of an inorganic binder and 39 parts of an organic carrier.
The median diameter of the microcrystalline silver powder is 0.8 mu m, and the tap density is 3.5g/cm3Specific surface area of 1.8m2/g。
The inorganic binder is prepared fromThe mass portion ratio of the SiO is 10 portions230 parts of Bi2O35 parts of B2O35 parts of Al2O310 parts of ZnO, 25 parts of CuO and 10 parts of MnO25 parts of ZrO2Is prepared.
The organic carrier is prepared from 50 parts of terpineol, 15 parts of butyl carbitol acetate, 5 parts of ethyl cellulose, 10 parts of cellulose acetate butyrate, 1 part of butyl carbitol, 11 parts of hydrogenated castor oil and 8 parts of sorbitan stearate in parts by mass.
A preparation method of PERC back silver paste for a high-welding-tension low-activity crystalline silicon solar cell comprises the following preparation steps:
(1) preparation of inorganic binder: mixing SiO2、Bi2O3、B2O3、Al2O3、ZnO、CuO、MnO2、ZrO2Mixing the raw materials uniformly according to the proportion, putting the mixture into a crucible, smelting the mixture at 1250 ℃ for 1 hour, water quenching the mixture, drying the mixture, and performing ball milling for 12 hours to obtain an inorganic binder with the median diameter of 0.8 mu m;
(2) preparation of organic vehicle: evenly mixing terpineol, butyl carbitol acetate, ethyl cellulose, butyl carbitol, hydrogenated castor oil, sorbitan monostearate and cellulose butyrate glycolate, keeping the temperature at 85 ℃ and stirring for 3 hours, and cooling to room temperature to obtain a transparent organic binder;
(3) preparing silver paste: and (3) uniformly mixing the microcrystalline silver powder, the inorganic binder prepared in the step (1) and the organic carrier prepared in the step (2), and rolling for 8 times by using a three-roll grinder to obtain the silver paste with the viscosity of 34kcps and the fineness of below 15 microns.
Comparative example 5:
the PERC back silver paste for the crystalline silicon solar cell with high welding tension and low activity comprises, by mass, 50 parts of microcrystalline silver powder, 2 parts of an inorganic binder, 0.2 part of nickel powder and 47.8 parts of an organic carrier.
The median diameter of the microcrystalline silver powder is 1.2 mu m, and the tap density is 3g/cm3Specific surface area of 1.5m2/g。
The inorganic binder is prepared from 25 parts of SiO by mass232 parts of Bi2O36 parts of B2O32 parts of Al2O311 parts of ZnO, 10 parts of CuO and 12 parts of MnO22 parts of ZrO2Is prepared.
The inorganic additive is metal Ni powder.
The median diameter of the inorganic additive is 1 μm.
The organic carrier is prepared from 35 parts of terpineol, 16 parts of butyl carbitol acetate, 20 parts of ethyl cellulose, 7 parts of cellulose acetate butyrate, 6 parts of butyl carbitol, 15 parts of hydrogenated castor oil and 1 part of sorbitan monostearate in parts by mass.
A preparation method of PERC back silver paste for a high-welding-tension low-activity crystalline silicon solar cell comprises the following preparation steps:
(1) preparation of inorganic binder: mixing SiO2、Bi2O3、B2O3、Al2O3、ZnO、CuO、MnO2、ZrO2Mixing the raw materials uniformly according to the proportion, putting the mixture into a crucible, smelting the mixture at the temperature of 1300 ℃ for 1 hour, water quenching the mixture, drying the mixture, and performing ball milling for 11 hours to obtain an inorganic binder with the median diameter of 0.6 mu m;
(2) preparation of organic vehicle: evenly mixing terpineol, butyl carbitol acetate, ethyl cellulose, butyl carbitol, hydrogenated castor oil, sorbitan monostearate and cellulose butyrate alkyd acid, keeping the temperature at 90 ℃ and stirring for 3 hours, and cooling to room temperature to obtain a transparent organic binder;
(3) preparing silver paste: and (2) uniformly mixing the microcrystalline silver powder, the inorganic binder prepared in the step (1), the organic carrier prepared in the step (2) and the nickel powder, and carrying out three-roll grinding for 6 times to obtain the silver paste with the viscosity of 18kcps and the fineness of below 15 microns.
The PERC back silver paste prepared in each example and each comparative example is printed on a monocrystalline silicon piece (180 +/-10 microns) through 280-mesh screen printing, 350 pieces are printed, the printing performance of the paste in the printing process is good, and the problems of screen blocking and the like are avoided. And manufacturing a cell piece through a production process flow of the crystalline silicon solar cell and testing the electrical property parameters, welding tension and weldability of the cell piece. The results are shown in the following table:
from the data in the table, the electrical performance parameters, welding tension and solderability of the solar cell prepared by using the PERC back silver paste for the crystalline silicon solar cell prepared by the invention are obviously better than those of the solar cell prepared by the comparative example 1, the comparative example 2, the comparative example 3, the comparative example 4 and the comparative example 5, wherein the comprehensive effect is the best in the example 1, so that the PERC back silver paste for the crystalline silicon solar cell prepared by the invention can obviously reduce or even avoid corrosion to a passivation layer and further improve the welding tension and solderability of a silver layer, thereby improving the comprehensive performance of the cell.
Claims (7)
1. The PERC back silver paste for the crystalline silicon solar cell with high welding tension and low activity is characterized by comprising the following components, by mass, 50-60 parts of microcrystalline silver powder, 0.5-2 parts of an inorganic binder, 0.5-1 part of an inorganic additive and 37-47 parts of an organic carrier.
2. The PERC back silver paste for the crystalline silicon solar cell with high welding pull force and low activity as claimed in claim 1, wherein the diameter of the microcrystalline silver powder is 0.8-1.5 μm, and the tap density is 2-3.5g/cm3The specific surface area is 1.4-1.8m2/g。
3. The PERC back silver paste for the crystalline silicon solar cell with high welding tension and low activity as claimed in claim 1, wherein the inorganic binder is prepared from 10-25 parts of SiO by mass230-40 parts of Bi2O35-10 parts of B2O31-5 parts of Al2O310-15 parts of ZnO, 10-20 parts of CuO and 10-15 parts of MnO21-5 parts of ZrO2Is prepared.
4. The PERC back silver paste for the crystalline silicon solar cell with high welding tension and low activity as claimed in claim 1, wherein the inorganic additive is metal Ni powder or metal Cu powder.
5. The PERC back silver paste for the crystalline silicon solar cell with high welding tension and low activity as claimed in claim 1, wherein the median diameter of the inorganic additive is 0.9-2 μm.
6. The PERC back silver paste for the crystalline silicon solar cell with high welding tension, low activity and high crystalline silicon as claimed in claim 1, wherein the organic carrier is prepared from 20-50 parts by mass of terpineol, 15-30 parts by mass of butyl carbitol acetate, 5-20 parts by mass of ethyl cellulose, 5-10 parts by mass of cellulose acetate butyrate, 1-18 parts by mass of butyl carbitol, 1-15 parts by mass of hydrogenated castor oil and 1-8 parts by mass of sorbitan stearate.
7. The PERC back silver paste for the crystalline silicon solar cell with high welding tension and low activity as claimed in claim 1, wherein the preparation steps of the back silver paste are as follows:
(1) preparation of inorganic binder: mixing SiO2、Bi2O3、B2O3、Al2O3、ZnO、CuO、MnO2、ZrO2Mixing uniformly according to the proportion, putting into a crucible, smelting at the temperature of 1100-1300 ℃ for 1-2 hours, water quenching and drying, and ball milling for 8-12 hours to obtain an inorganic binder with the median diameter of 0.5-1 mu m;
(2) preparation of organic vehicle: evenly mixing terpineol, butyl carbitol acetate, ethyl cellulose, cellulose acetate butyrate, butyl carbitol, hydrogenated castor oil and sorbitan stearate, keeping the temperature at 80-100 ℃ and stirring for 1.5-3 hours, and cooling to room temperature to obtain a transparent organic binder;
(3) preparing silver paste: and (2) uniformly mixing the microcrystalline silver powder, the inorganic binder prepared in the step (1), the organic carrier prepared in the step (2) and the inorganic additive, and rolling for 6-8 times by using a three-roll grinder to obtain the silver paste with the viscosity of 18-35kcps and the fineness of below 15 microns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110331494.1A CN113035410A (en) | 2021-03-29 | 2021-03-29 | PERC back silver paste for high-welding-tension low-activity crystalline silicon solar cell and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110331494.1A CN113035410A (en) | 2021-03-29 | 2021-03-29 | PERC back silver paste for high-welding-tension low-activity crystalline silicon solar cell and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113035410A true CN113035410A (en) | 2021-06-25 |
Family
ID=76473265
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110331494.1A Pending CN113035410A (en) | 2021-03-29 | 2021-03-29 | PERC back silver paste for high-welding-tension low-activity crystalline silicon solar cell and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113035410A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113744914A (en) * | 2021-09-01 | 2021-12-03 | 江苏正能电子科技有限公司 | High-temperature silver paste with Ag-On-Al structure for PERC and preparation method thereof |
| CN114230360A (en) * | 2021-12-30 | 2022-03-25 | 大连海外华昇电子科技有限公司 | AMB method silver-copper slurry for water-soluble ceramic metallization and preparation method thereof |
| CN116564576A (en) * | 2023-05-24 | 2023-08-08 | 南通艾盛新能源科技有限公司 | Conductive paste added with inorganic material and preparation method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102262919A (en) * | 2011-07-19 | 2011-11-30 | 彩虹集团公司 | Environment-friendly electrode silver paste for piezoresistor and preparation method for paste |
| CN102751000A (en) * | 2012-06-16 | 2012-10-24 | 华东微电子技术研究所合肥圣达实业公司 | Lead-free and cadmium-free electrode silver slurry for piezoelectric ceramics and preparation method thereof |
| CN105825913A (en) * | 2016-05-16 | 2016-08-03 | 南通天盛新能源股份有限公司 | Anti-aging back silver pulp used in crystalline silicon solar cell and preparation method for same |
| CN106782759A (en) * | 2017-01-18 | 2017-05-31 | 广州市儒兴科技开发有限公司 | A kind of back side silver paste for PERC crystal silicon solar energy batteries and preparation method thereof |
| CN109215836A (en) * | 2018-09-30 | 2019-01-15 | 江苏正能电子科技有限公司 | A kind of heat-proof aging crystal silicon solar batteries back side silver paste and preparation method thereof |
| CN109300573A (en) * | 2018-09-27 | 2019-02-01 | 海宁市瑞银科技有限公司 | PERC low silver-colored back silver paste containing high adhesion force used for solar batteries and preparation method thereof |
| CN111403077A (en) * | 2019-09-04 | 2020-07-10 | 杭州正银电子材料有限公司 | General back electrode silver paste for PERC single-sided double-sided battery and preparation method |
| CN111675490A (en) * | 2020-06-20 | 2020-09-18 | 厦门翰森达电子科技有限公司 | Lead-free and cadmium-free glass powder and preparation method thereof, and conductive silver paste and preparation method thereof |
-
2021
- 2021-03-29 CN CN202110331494.1A patent/CN113035410A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102262919A (en) * | 2011-07-19 | 2011-11-30 | 彩虹集团公司 | Environment-friendly electrode silver paste for piezoresistor and preparation method for paste |
| CN102751000A (en) * | 2012-06-16 | 2012-10-24 | 华东微电子技术研究所合肥圣达实业公司 | Lead-free and cadmium-free electrode silver slurry for piezoelectric ceramics and preparation method thereof |
| CN105825913A (en) * | 2016-05-16 | 2016-08-03 | 南通天盛新能源股份有限公司 | Anti-aging back silver pulp used in crystalline silicon solar cell and preparation method for same |
| CN106782759A (en) * | 2017-01-18 | 2017-05-31 | 广州市儒兴科技开发有限公司 | A kind of back side silver paste for PERC crystal silicon solar energy batteries and preparation method thereof |
| CN109300573A (en) * | 2018-09-27 | 2019-02-01 | 海宁市瑞银科技有限公司 | PERC low silver-colored back silver paste containing high adhesion force used for solar batteries and preparation method thereof |
| CN109215836A (en) * | 2018-09-30 | 2019-01-15 | 江苏正能电子科技有限公司 | A kind of heat-proof aging crystal silicon solar batteries back side silver paste and preparation method thereof |
| CN111403077A (en) * | 2019-09-04 | 2020-07-10 | 杭州正银电子材料有限公司 | General back electrode silver paste for PERC single-sided double-sided battery and preparation method |
| CN111675490A (en) * | 2020-06-20 | 2020-09-18 | 厦门翰森达电子科技有限公司 | Lead-free and cadmium-free glass powder and preparation method thereof, and conductive silver paste and preparation method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113744914A (en) * | 2021-09-01 | 2021-12-03 | 江苏正能电子科技有限公司 | High-temperature silver paste with Ag-On-Al structure for PERC and preparation method thereof |
| CN114230360A (en) * | 2021-12-30 | 2022-03-25 | 大连海外华昇电子科技有限公司 | AMB method silver-copper slurry for water-soluble ceramic metallization and preparation method thereof |
| CN116564576A (en) * | 2023-05-24 | 2023-08-08 | 南通艾盛新能源科技有限公司 | Conductive paste added with inorganic material and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN113035410A (en) | PERC back silver paste for high-welding-tension low-activity crystalline silicon solar cell and preparation method thereof | |
| CN107195354B (en) | A kind of back passivation silicon solar cell positive electrode silver paste and preparation method thereof | |
| CN101901844B (en) | Solar cell conductive slurry and preparation method thereof | |
| US8313673B2 (en) | Method of manufacture of semiconductor device and conductive compositions used therein | |
| CN110040968A (en) | A kind of glass powder and the silver-colored aluminium paste in N-type double-sided solar battery front including the glass powder | |
| AU2006201558A1 (en) | Conductive compositions and processes for use in the manufacture of semiconductor devices | |
| US20100126565A1 (en) | Conductive paste for solar cell electrode | |
| CN102956283B (en) | A kind of new and effective crystal silicon solar batteries unleaded silver slurry and preparation and application thereof | |
| JP2010524257A (en) | Thick film conductive composition and method of use in the manufacture of semiconductor devices | |
| CN102881351B (en) | Back tin electrode slurry for crystalline silicon photovoltaic cells and method for preparing back tin electrode slurry | |
| CN108695011A (en) | Back of the body passivation crystal silicon solar energy battery front side silver paste and its preparation method and application | |
| CN109119181B (en) | Front silver paste for crystalline silicon solar cell and preparation method and application thereof | |
| CN110364286A (en) | A kind of two-sided PERC cell backside electrode silver plasm of monocrystalline and preparation method thereof | |
| WO2020252829A1 (en) | Low-temperature sintered back-surface silver paste for all-aluminum back-surface-field crystalline silicon solar cell | |
| CN105374413B (en) | A kind of crystal silicon solar batteries back electrode low viscosity silver paste and preparation method thereof | |
| CN110277459B (en) | Preparation method of P-type crystalline silicon back electrode | |
| CN109754905A (en) | A kind of high thixotroping PERC crystal silicon solar energy battery back side silver paste and preparation method thereof | |
| CN105825912B (en) | A kind of unleaded main grid paste of silicon solar cell front electrode and preparation method thereof | |
| CN108877989B (en) | Anti-light-decay PERC monocrystalline silicon solar cell aluminum paste and preparation method thereof | |
| CN117253649B (en) | Conductive silver paste for LECO technology sintering, preparation method, electrode and battery | |
| CN109384393A (en) | PERC crystal silicon solar battery back silver paste lead-free glass powder and preparation method thereof | |
| CN110504045A (en) | A kind of crystal silicon solar batteries PERC aluminium paste of high-tensile strength and preparation method thereof | |
| WO2020238367A1 (en) | Conductive paste, solar cell prepared therefrom and manufacturing method therefor | |
| CN108321224A (en) | It is used to prepare the polynary nanometer material including its paste composition and electrode of solar battery and battery of electrode of solar battery | |
| CN116313213A (en) | Conductive silver-aluminum paste, preparation method, electrode and N-type Topcon battery |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210625 |