CN113030188A - Method for detecting carrier concentration of semiconductor material - Google Patents
Method for detecting carrier concentration of semiconductor material Download PDFInfo
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- CN113030188A CN113030188A CN202110250914.3A CN202110250914A CN113030188A CN 113030188 A CN113030188 A CN 113030188A CN 202110250914 A CN202110250914 A CN 202110250914A CN 113030188 A CN113030188 A CN 113030188A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 239000000463 material Substances 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims abstract description 16
- 239000003990 capacitor Substances 0.000 claims abstract description 17
- 238000012360 testing method Methods 0.000 claims abstract description 17
- 230000005693 optoelectronics Effects 0.000 claims abstract description 14
- 238000005485 electric heating Methods 0.000 claims abstract description 11
- 238000001514 detection method Methods 0.000 claims description 28
- 230000008859 change Effects 0.000 claims description 6
- 230000005684 electric field Effects 0.000 abstract description 8
- 230000005355 Hall effect Effects 0.000 description 5
- 230000007613 environmental effect Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
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Abstract
The invention discloses a method for detecting the carrier concentration of a semiconductor material, which comprises the following steps of S1: firstly, building an electro-optical effect tester inside a laboratory, then placing a semiconductor material to be tested at a testing cylinder of the electro-optical effect tester, and corresponding to positive and negative electrode interfaces of the testing cylinder; s2: selecting parallel plate capacitors of adjustable capacitance size with semiconductor material between the parallel plate capacitors; s3: selecting a two-section type air supply pipeline, arranging an electric heating wire at one end of the two-section type air supply pipeline, and connecting the two-section type air supply pipeline through a pipeline connecting structure; the invention is additionally provided with the parallel plate capacitor with adjustable capacitance, so that the semiconductor material to be detected is positioned in a certain electric field, and the carrier concentration of the semiconductor material to be detected is obtained by adjusting the electric field.
Description
Technical Field
The invention relates to a detection method, in particular to a detection method of the carrier concentration of a semiconductor material, and belongs to the technical field of semiconductor detection.
Background
The electro-optic effect is a general term for various changes of optical properties of an object under the action of an external electric field, and generally, the change of the external electric field along with time is very slow compared with the frequency of light.
Semiconductor materials (semiconductor materials) are a class of electronic materials that have semiconducting properties (electrical conductivity between conductor and insulator, resistivity in the range of about 1m Ω -cm to 1G Ω -cm) and are useful in the fabrication of semiconductor devices and integrated circuits.
The carrier concentration of a semiconductor material is mostly measured by the Hall effect, however, due to the defects of a Hall effect test device, the detection precision has larger errors, and secondly, the instant carrier concentration of the semiconductor material and a device thereof in the working process is often required to detect the working performance of the semiconductor material and the device thereof, the Hall effect test device can only detect the carrier concentration under the non-working condition of the semiconductor material and the device, and the carrier concentration obtained by the test is not enough to meet the actual requirement of the semiconductor application, so that the electro-optical measurement of the carrier concentration of the semiconductor material by changing the temperature of the semiconductor is necessary.
Therefore, a method for detecting the carrier concentration of the semiconductor material is provided.
Disclosure of Invention
The present invention is directed to a method for detecting a carrier concentration of a semiconductor material, so as to solve the problems mentioned in the background art.
In order to achieve the purpose, the invention provides the following technical scheme: a method for detecting the carrier concentration of a semiconductor material comprises the following steps:
s1: firstly, building an electro-optical effect tester inside a laboratory, then placing a semiconductor material to be tested at a testing cylinder of the electro-optical effect tester, and corresponding to positive and negative electrode interfaces of the testing cylinder;
s2: selecting a parallel plate capacitor with adjustable capacitance, installing the parallel plate capacitor inside the detection cylinder, and enabling the semiconductor material to be located between the parallel plate capacitors;
s3: selecting a two-section type air supply pipeline, arranging an electric heating wire at one end of the two-section type air supply pipeline, and connecting the two-section type air supply pipeline through a pipeline connecting structure;
s4: one air supply pipeline is connected with an air blower, and the other air supply pipeline is connected with an air inlet of the detection barrel, so that the air outlet of the air supply pipeline can be aligned to the semiconductor material;
s5: the temperature sensor is arranged at the corner of the detection cylinder, the sensing end of the temperature sensor is in contact with the surface of the semiconductor material, the power of the electric heating wire can be adjusted according to the change of the temperature value of the temperature sensor by connecting a circuit, and the rotating speed of the blower is correspondingly adjusted;
s6: one end of the lead is connected with a detector of the electro-optical effect test instrument, the other end of the lead is connected with a positive electrode interface and a negative electrode interface of the detection cylinder to form a complete circuit, and the carrier concentration of the semiconductor material is measured.
As a preferred technical solution of the present invention, in step S3, the outer surface of the two-stage air supply duct is wrapped with an insulating layer.
In a preferred embodiment of the present invention, in step S1, the semiconductor material has a cylindrical structure.
Compared with the prior art, the invention has the beneficial effects that:
1. according to the method for detecting the carrier concentration of the semiconductor material, the parallel plate capacitor with the adjustable capacitance is additionally arranged, so that the semiconductor material to be detected is positioned in a certain electric field, the carrier concentration of the semiconductor material to be detected is obtained by adjusting the electric field, and compared with Hall effect detection, the method not only improves the detection efficiency, but also improves the detection accuracy of the carrier concentration of the semiconductor material and reduces the detection error.
2. According to the method for detecting the carrier concentration of the semiconductor material, the electric heating wire and the air blower are adopted, the environmental temperature of the semiconductor material to be detected can be conveniently controlled and adjusted by adjusting the power of the electric heating wire and the rotating speed of the air blower, the temperature can be changed within a design range, the temperature can be kept constant, and a linear change rule graph of the carrier concentration and the temperature can be conveniently drawn.
Drawings
FIG. 1 is a schematic flow chart of the steps of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, the present invention provides a method for detecting a carrier concentration of a semiconductor material, comprising:
as shown in fig. 1, the method comprises the following steps:
s1: firstly, building an electro-optical effect tester inside a laboratory, then placing a semiconductor material to be tested at a testing cylinder of the electro-optical effect tester, and corresponding to positive and negative electrode interfaces of the testing cylinder;
s2: selecting a parallel plate capacitor with adjustable capacitance, installing the parallel plate capacitor inside the detection cylinder, and enabling the semiconductor material to be located between the parallel plate capacitors;
s3: selecting a two-section type air supply pipeline, arranging an electric heating wire at one end of the two-section type air supply pipeline, and connecting the two-section type air supply pipeline through a pipeline connecting structure;
s4: one air supply pipeline is connected with an air blower, and the other air supply pipeline is connected with an air inlet of the detection barrel, so that the air outlet of the air supply pipeline can be aligned to the semiconductor material;
s5: the temperature sensor is arranged at the corner of the detection cylinder, the sensing end of the temperature sensor is in contact with the surface of the semiconductor material, the power of the electric heating wire can be adjusted according to the change of the temperature value of the temperature sensor by connecting a circuit, and the rotating speed of the blower is correspondingly adjusted;
s6: one end of the lead is connected with a detector of the electro-optical effect test instrument, the other end of the lead is connected with a positive electrode interface and a negative electrode interface of the detection cylinder to form a complete circuit, and the carrier concentration of the semiconductor material is measured.
Referring to fig. 1, in step S3, the outer surface of the two-stage air supply duct is covered with an insulating layer, and in step S1, the semiconductor material is a cylindrical structure.
When the method is used specifically, firstly, an electro-optical effect tester is built in a laboratory, and then the semiconductor material to be tested is placed at a testing cylinder of the electro-optical effect tester and corresponds to positive and negative electrode interfaces of the testing cylinder; selecting a parallel plate capacitor with adjustable capacitance, installing the parallel plate capacitor inside the detection cylinder, and enabling the semiconductor material to be located between the parallel plate capacitors; selecting a two-section type air supply pipeline, arranging an electric heating wire at one end of the two-section type air supply pipeline, and connecting the two-section type air supply pipeline through a pipeline connecting structure; one air supply pipeline is connected with an air blower, and the other air supply pipeline is connected with an air inlet of the detection barrel, so that the air outlet of the air supply pipeline can be aligned to the semiconductor material; the temperature sensor is arranged at the corner of the detection cylinder, the sensing end of the temperature sensor is in contact with the surface of the semiconductor material, the power of the electric heating wire can be adjusted according to the change of the temperature value of the temperature sensor by connecting a circuit, and the rotating speed of the blower is correspondingly adjusted; one end of a lead is connected with a detector of an electro-optical effect test instrument, the other end of the lead is connected with a positive electrode interface and a negative electrode interface of a detection cylinder to form a complete circuit, the corresponding semiconductor carrier concentration is obtained by changing the environmental temperature, and a linear table is drawn.
In summary, the parallel plate capacitor with the adjustable capacitance is additionally arranged, so that the semiconductor material to be detected is positioned in a certain electric field, and the carrier concentration of the semiconductor material to be detected is obtained by adjusting the electric field, compared with hall effect detection, the detection efficiency is improved, the detection accuracy of the carrier concentration of the semiconductor material is improved, and the detection error is reduced.
In the description of the present invention, it is to be understood that the indicated orientations or positional relationships are based on the orientations or positional relationships shown in the drawings and are only for convenience in describing the present invention and simplifying the description, but are not intended to indicate or imply that the indicated devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are not to be construed as limiting the present invention.
In the present invention, unless otherwise explicitly specified or limited, for example, it may be fixedly attached, detachably attached, or integrated; can be mechanically or electrically connected; the terms may be directly connected or indirectly connected through an intermediate, and may be communication between two elements or interaction relationship between two elements, unless otherwise specifically limited, and the specific meaning of the terms in the present invention will be understood by those skilled in the art according to specific situations.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (3)
1. A method for detecting the carrier concentration of a semiconductor material is characterized by comprising the following steps:
s1: firstly, building an electro-optical effect tester inside a laboratory, then placing a semiconductor material to be tested at a testing cylinder of the electro-optical effect tester, and corresponding to positive and negative electrode interfaces of the testing cylinder;
s2: selecting a parallel plate capacitor with adjustable capacitance, installing the parallel plate capacitor inside the detection cylinder, and enabling the semiconductor material to be located between the parallel plate capacitors;
s3: selecting a two-section type air supply pipeline, arranging an electric heating wire at one end of the two-section type air supply pipeline, and connecting the two-section type air supply pipeline through a pipeline connecting structure;
s4: one air supply pipeline is connected with an air blower, and the other air supply pipeline is connected with an air inlet of the detection barrel, so that the air outlet of the air supply pipeline can be aligned to the semiconductor material;
s5: the temperature sensor is arranged at the corner of the detection cylinder, the sensing end of the temperature sensor is in contact with the surface of the semiconductor material, the power of the electric heating wire can be adjusted according to the change of the temperature value of the temperature sensor by connecting a circuit, and the rotating speed of the blower is correspondingly adjusted;
s6: one end of the lead is connected with a detector of the electro-optical effect test instrument, the other end of the lead is connected with a positive electrode interface and a negative electrode interface of the detection cylinder to form a complete circuit, and the carrier concentration of the semiconductor material is measured.
2. A method for detecting a carrier concentration of a semiconductor material according to claim 1, wherein: in step S3, the outer surface of the two-stage air supply duct is wrapped with an insulating layer.
3. A method for detecting a carrier concentration of a semiconductor material according to claim 1, wherein: in step S1, the semiconductor material is a cylindrical structure.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110250914.3A CN113030188A (en) | 2021-03-08 | 2021-03-08 | Method for detecting carrier concentration of semiconductor material |
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| CN202110250914.3A CN113030188A (en) | 2021-03-08 | 2021-03-08 | Method for detecting carrier concentration of semiconductor material |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1482929A (en) * | 1974-05-16 | 1977-08-17 | Post Office | Apparatus and method for measuring carrier concentration in semiconductor materials |
| US5237266A (en) * | 1990-07-12 | 1993-08-17 | Semiconductor Felvezeto Fizikai Labs. Rt | Process and apparatus for determining the carrier concentration in semiconductors |
| RU2079853C1 (en) * | 1993-09-17 | 1997-05-20 | Ильичев Эдуард Анатольевич | Method of measurement of electrophysical parameters of semiconductor materials |
| CN1175088A (en) * | 1996-08-27 | 1998-03-04 | 株式会社爱德万测试 | Constant temperature chamber of handler for use with semiconductor device testing apparatus |
| JP2003168711A (en) * | 2001-11-30 | 2003-06-13 | Shin Etsu Handotai Co Ltd | Method of measuring carrier concentration and method of manufacturing iii-v compound semiconductor wafer |
| US20140368828A1 (en) * | 2013-06-12 | 2014-12-18 | Medlumics, S.L. | Electro-Optical Silicon-Based Phase Modulator with Null Residual Amplitude Modulation |
| CN108387333A (en) * | 2018-01-04 | 2018-08-10 | 内蒙古工业大学 | A kind of silicon thin film material stress detecting system |
-
2021
- 2021-03-08 CN CN202110250914.3A patent/CN113030188A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1482929A (en) * | 1974-05-16 | 1977-08-17 | Post Office | Apparatus and method for measuring carrier concentration in semiconductor materials |
| US5237266A (en) * | 1990-07-12 | 1993-08-17 | Semiconductor Felvezeto Fizikai Labs. Rt | Process and apparatus for determining the carrier concentration in semiconductors |
| RU2079853C1 (en) * | 1993-09-17 | 1997-05-20 | Ильичев Эдуард Анатольевич | Method of measurement of electrophysical parameters of semiconductor materials |
| CN1175088A (en) * | 1996-08-27 | 1998-03-04 | 株式会社爱德万测试 | Constant temperature chamber of handler for use with semiconductor device testing apparatus |
| JP2003168711A (en) * | 2001-11-30 | 2003-06-13 | Shin Etsu Handotai Co Ltd | Method of measuring carrier concentration and method of manufacturing iii-v compound semiconductor wafer |
| US20140368828A1 (en) * | 2013-06-12 | 2014-12-18 | Medlumics, S.L. | Electro-Optical Silicon-Based Phase Modulator with Null Residual Amplitude Modulation |
| CN108387333A (en) * | 2018-01-04 | 2018-08-10 | 内蒙古工业大学 | A kind of silicon thin film material stress detecting system |
Non-Patent Citations (1)
| Title |
|---|
| 周吉: "多场作用下电光材料光传输特性与电调控机制研究", 《中国博士学位论文全文数据库 工程科技I辑》, no. 2, pages 4 - 4 * |
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Application publication date: 20210625 |