CN113025957A - Metal mask plate and display panel - Google Patents

Metal mask plate and display panel Download PDF

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Publication number
CN113025957A
CN113025957A CN202110250935.5A CN202110250935A CN113025957A CN 113025957 A CN113025957 A CN 113025957A CN 202110250935 A CN202110250935 A CN 202110250935A CN 113025957 A CN113025957 A CN 113025957A
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CN
China
Prior art keywords
region
stress
metal mask
mask
cutting line
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Pending
Application number
CN202110250935.5A
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Chinese (zh)
Inventor
李静静
范柳彬
郑小红
杨泽明
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Kunshan Govisionox Optoelectronics Co Ltd
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Kunshan Govisionox Optoelectronics Co Ltd
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Application filed by Kunshan Govisionox Optoelectronics Co Ltd filed Critical Kunshan Govisionox Optoelectronics Co Ltd
Priority to CN202110250935.5A priority Critical patent/CN113025957A/en
Publication of CN113025957A publication Critical patent/CN113025957A/en
Pending legal-status Critical Current

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/35Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Abstract

The embodiment of the application provides a metal mask plate and a display panel, through setting up first mask region and the second mask region that is located first mask region both sides respectively, first mask region includes the figure region, distinguish through the line of cut between first mask region and the second mask region, and set up the supplementary dispersion region of first stress in the second mask region, set up the supplementary dispersion region of second stress between figure region and line of cut, thereby can absorb and disperse the inhomogeneous force that the clamping jaw originally transmitted to the figure region to the supplementary dispersion region of second stress, the atress homogeneity and the stretch-mesh precision in figure region have been improved, reduce the metal mask plate and take place the probability at the off normal phenomenon of RGB pixel coating by vaporization process, and then promote the coating by vaporization yield.

Description

Metal mask plate and display panel
Technical Field
The application relates to the technical field of display panel evaporation processes, in particular to a metal mask plate and a display panel.
Background
The oled (organic Light Emitting display) has excellent properties of lightness, thinness, self-luminescence, low power consumption, high contrast, flexibility, foldability and the like, is widely applied in the fields of mobile phones, flat panels and the like at present, and forms strong competition with lcd (liquid Crystal display) display.
The OLED light emitting layer uses a Fine Metal Mask (FMM) to realize accurate preparation of RGB pixels through an evaporation process, however, research of the inventor of the application finds that the accuracy of the existing RGB pixel position evaporation is not high, the occurrence probability of the deviation phenomenon in the evaporation process of the RGB pixels is high, and the evaporation yield cannot meet the actual process requirements.
Disclosure of Invention
Based on the not enough of current design, this application provides a metal mask board and display panel, can improve the regional atress homogeneity of figure and stretch the net precision, reduces metal mask board at the off normal phenomenon emergence probability of RGB pixel coating by vaporization process, and then promotes the coating by vaporization yield.
According to a first aspect of the present application, there is provided a metal mask plate, the metal mask plate comprising:
a first mask region including a pattern region;
the second mask regions are respectively positioned at two sides of the first mask region in the extension direction, wherein the first mask region and the second mask region are distinguished by cutting lines;
a first stress assisted distraction region located within the second mask region;
a second stress auxiliary dispersion area located between the pattern area and the cutting line.
In a possible implementation manner of the first aspect, a ratio of a width of the first stress auxiliary dispersion area in a direction parallel to the cutting line to a width of the metal mask plate in the direction parallel to the cutting line is in a range from 85% to 99%.
In a possible implementation manner of the first aspect, a ratio of a width of the second stress auxiliary dispersion area in a direction parallel to the cutting line to a width of the metal mask plate in the direction parallel to the cutting line is in a range from 90% to 99%.
In one possible embodiment of the first aspect, a width of the second stress auxiliary dispersion area in a direction parallel to the cutting line is larger than a width of the pattern area in a direction parallel to the cutting line.
In a possible embodiment of the first aspect, the width of the second stress auxiliary dispersion area perpendicular to the cutting line direction is 6-10 um.
In a possible implementation manner of the first aspect, a ratio of a width of the pattern region in a direction parallel to the cutting line to a width of the metal mask plate in the direction parallel to the cutting line is in a range from 89.5% to 98.5%.
In one possible embodiment of the first aspect, the distance between the first stress-assisted dispersion area and the cutting line is in the range of 4 to 6 mm.
In a possible embodiment of the first aspect, the distance between the second stress auxiliary dispersion area and the cutting line is in a range of 8 to 12 mm.
In a possible implementation manner of the first aspect, the second stress auxiliary dispersion area and the pattern area use the same etching pattern.
According to a first aspect of the present application, a display panel is provided, which includes a pixel unit formed by performing pixel evaporation on a pattern region of a metal mask according to the first aspect or any one of the possible embodiments of the first aspect.
Based on any one of the above aspects, this application is through setting up first mask region and the second mask region that is located the extending direction both sides of first mask region respectively, first mask region includes the figure region, distinguish through the cutting line between first mask region and the second mask region, and set up first stress auxiliary dispersion region in the second mask region, set up second stress auxiliary dispersion region between figure region and cutting line, thereby can absorb and disperse the inhomogeneous force that the clamping jaw originally transmitted to the figure region to second stress auxiliary dispersion region, the atress uniformity and the stretching precision in figure region have been improved, reduce the off normal phenomenon emergence probability of metal mask board in RGB pixel evaporation process, and then promote the evaporation coating yield.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and it will be apparent to those skilled in the art that other related drawings can be obtained from the drawings without inventive effort.
Fig. 1 is a schematic structural diagram of a metal mask provided in the related art;
FIG. 2 is a partial detail view of a mechanical simulation diagram of a metal mask provided by the related art;
fig. 3 shows a schematic structural diagram of a metal mask provided in an embodiment of the present application;
fig. 4 shows a partial detail view of a mechanical simulation schematic diagram of a metal mask provided in an embodiment of the present application.
Detailed Description
In order to make the purpose, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it should be understood that the drawings in the present application are for illustrative and descriptive purposes only and are not used to limit the scope of protection of the present application. Additionally, it should be understood that the schematic drawings are not necessarily drawn to scale. The flowcharts used in this application illustrate operations implemented according to some of the embodiments of the present application.
As the technical problems known in the background art, the OLED light emitting layer uses a fine metal mask to realize the precise preparation of RGB pixels through an evaporation process, and the inventors of the present application have found that the evaporation precision of RGB pixel positions is greatly influenced by the fine metal mask stretching accuracy and the stress uniformity, and the stress uniformity is generally closely related to the design scheme of the fine metal mask.
With the development of a high-resolution display technology, the requirement on the accuracy of the evaporation position of the RGB pixels is higher and higher, and the requirement is closely related to the precision and the stress uniformity of a precision metal mask, so that the design of the precision metal mask with uniform stress in the process of stretching the screen is very important.
Referring to fig. 1, a schematic structural diagram of a metal mask 100 in the related art is shown. In the related art, the metal mask plate 100 may include a first mask region 110 and a second mask region 120 respectively located at both sides of an extending direction (e.g., an F direction shown in fig. 1) of the first mask region 110, the first mask region 110 includes a pattern region 112, the first mask region 110 and the second mask region 120 are distinguished by a cutting line 130, and the first stress auxiliary dispersion region 122 is located in the second mask region 120. As shown in fig. 2, after creative research by the present inventors, it is found that, in the process of stretching the metal mask plate 100, when the pattern regions 112 in the cutting lines 130 of the metal mask plate 100 are an integral body, the clamping jaw pulling force is unevenly distributed on the metal mask plate 100. For example, in the detail of the simulation shown in FIG. 2, the density of the filled areas indicates the magnitude of the force, and the greater the density, the greater the force. Further, the transmission path and magnitude of the jaw tension are shown by the straight line arrows in fig. 2, and it can be seen that the longer the straight line arrows are, the greater the transmitted tension is, and the relatively large force is applied to the region (a) of the central axis at both ends of the pattern region 112.
In addition, as shown in fig. 2, there is a significant force non-uniformity phenomenon in some regions of the metal mask 100, such as the force non-uniformity in the central axis region (a) at the two ends of the pattern region 112 and the four corner regions (B1 and B2, C1 and C2) of the pattern region 112. Such a design, which only includes the first stress-assisted dispersion region 122 as shown in fig. 1, may cause uneven stress on the metal mask 100 during the screening process, thereby affecting the screening accuracy and thus the evaporation accuracy. Therefore, it is necessary to design a metal mask 100 with uniform stress during the screen process to solve or improve the above problems.
It should be noted that the above prior art solutions have shortcomings which are the results of practical and careful study of the inventor, therefore, the discovery process of the above technical problems and the solutions proposed by the following embodiments of the present application for the above problems should be the contribution of the inventor to the present application in the course of the invention creation process, and should not be understood as technical contents known by those skilled in the art.
Based on the above technical problems discovered by the inventor, the embodiments of the present application provide an improved metal mask 100 to improve the above problems.
In detail, according to the metal mask plate 100 provided in the embodiment of the present application, by providing the first mask region 110 and the second mask regions 120 respectively located at two sides of the first mask region 110, the first mask region 110 includes the pattern region 112, the first mask region 110 and the second mask region 120 are distinguished by the cutting line 130, the first stress auxiliary dispersion region 122 is disposed in the second mask region 120, and the second stress auxiliary dispersion region 114 is disposed between the pattern region 112 and the cutting line 130.
In this embodiment, the uneven force originally transmitted to the pattern region 112 by the clamping jaw 200 is absorbed and dispersed to the second stress auxiliary dispersion region 114, so that the stress uniformity and the stretching precision of the pattern region 112 are improved, the occurrence probability of the deviation phenomenon of the metal mask plate 100 in the RGB pixel evaporation process is reduced, and the evaporation yield is improved.
Some exemplary implementations of the metal mask 100 described above will be described in detail below with reference to the drawings and specific alternative embodiments.
Referring to fig. 3, the metal mask plate 100 may include a first mask region 110 and second mask regions 120 respectively located at both sides of an extending direction (e.g., an F direction shown in fig. 1) of the first mask region 110, the first mask region 110 includes a pattern region 112, and the first mask region 110 and the second mask regions 120 are distinguished by a cutting line 130. The first stress auxiliary dispersion region 122 is located in the second mask region 120, and the second stress auxiliary dispersion region 114 is located between the pattern region 112 and the scribe line 130.
In one possible embodiment, one or more pixel openings may be disposed in the graphic region 112, the one or more pixel openings may correspond to one or more display regions of the display panel, and each metal mesh in the pixel openings may correspond to a light emitting unit of the display panel. The pixel openings may be located in a region of the pattern region 112 corresponding to the evaporation holes, i.e., the pixel openings are exposed through the evaporation holes. The evaporation holes can define pixel openings of the pattern area 112. The area of the evaporation hole can be equal to the area of the pixel opening, but the application is not limited to the area, the area of the evaporation hole can be larger than the area of the pixel opening, and the pixel opening of the graphic area 112 can be prevented from being shielded by the supporting mask plate in the evaporation process.
In one possible embodiment, the cutting line 130 may serve as a boundary between the first mask region 110 and the second mask region 120, and the metal mask plate 100 may be cut along an extending direction of the cutting line 130 after completion of the evaporation. For example, in the evaporation process, since the second mask region 120 does not participate in evaporation, after the metal mask plate 100 is welded to the frame to form the mask device, the metal mask plate 100 can be cut along each cutting line 130, so that the second mask region 120 is separated from the metal mask plate 100, thereby facilitating the movement of the mask device and the subsequent evaporation process.
In one possible embodiment, the metal mask 100 may be a mask for evaporation, and the pattern region 112 may include one or more film layers that may be used to form a desired pattern, such as evaporation of a pixel layer on a display panel. The region outside the pattern region 112 may refer to a region of the metal mask 100 that is not used for evaporation, for example, a periphery of the pattern region 112 or a region between adjacent pattern regions 112.
In a possible embodiment, the metal mask plate 100 may have clamping jaw fixing regions on two sides, and the metal mask plate 100 may be fixed by the clamping jaws 200 when the metal mask plate 100 is welded. The clamping jaw 200 is simple in fixing mode and firm in fixing efficiency. For example, a notch may be disposed at one end of the clamping jaw fixing area contacting the clamping jaw 200, the notch may be located at a central position of one end of the clamping jaw fixing area contacting the clamping jaw 200, and the notch may be disposed to fully stretch two longer sides of the metal mask plate 100, and on the other hand, may prevent the two clamping jaws 200 at the same end of the metal mask plate 100 from pressing the middle area.
Based on the above design, in the present embodiment, by setting the first mask region 110 and the second mask regions 120 respectively located at two sides of the first mask region 110, the first mask region 110 includes the pattern region 112, the first mask region 110 and the second mask region 120 are distinguished by the cutting line 130, the first stress auxiliary dispersion region 122 is disposed in the second mask region 120, and the second stress auxiliary dispersion region 114 is disposed between the pattern region 112 and the cutting line 130, so that the uneven force originally transmitted from the clamping jaw 200 to the pattern region 112 can be absorbed and dispersed to the second stress auxiliary dispersion region 114, the stress uniformity and the stretching precision of the pattern region 112 are improved, the occurrence probability of the deviation phenomenon of the metal mask plate 100 in the RGB pixel evaporation process is reduced, and the evaporation yield is improved.
For example, based on the design shown in fig. 3, referring to fig. 4, the force applied by the clamping jaw on the metal mask plate 100 during the stretching process and the transmission path are shown by the straight line arrow in fig. 4, the second mask region 120 can effectively absorb and reduce the non-uniformity of the force on the clamping jaw 200 transmitted on the metal mask plate 100, which is helpful for improving the force uniformity during the stretching process of the metal mask plate 100.
For example, comparing with fig. 2, the density of the filling area in the pattern area 112 in fig. 4 is uniform, and the stress is uniform, while the uneven stress at the position a on the central axis line at the two ends of the pattern area 112 in fig. 2 does not exist in fig. 4 after the above design; moreover, the uneven stress phenomenon occurring in the four corner regions (such as B1 and B2) of the pattern region 112 in fig. 2 is transferred to the second mask region 120 (such as the positions of D1 and D2) in fig. 4, so the design is helpful to improve the stress uniformity and the screening precision of the pattern region 112, improve the yield of evaporation, and promote the development of the high-resolution OLED display technology.
It is noted that, in one possible embodiment, the first stress auxiliary dispersion area 122 and the second stress auxiliary dispersion area 114 may be deposited with one or more through holes, such as stress dispersion through holes or stress solidification through holes. The through holes in the first stress auxiliary dispersion area 122 and the second stress auxiliary dispersion area 114 may be uniformly distributed or randomly distributed. The shape of the through hole can be selected according to actual design requirements, and for example, the through hole can be a regular shape such as a circle, a square, a rectangle, or the like, or the through hole can also be an irregular shape such as a special-shaped hole. For example, the shape of the through holes in the first stress auxiliary dispersion region 122 may be circular, and the shape of the through holes in the second stress auxiliary dispersion region 114 may be square. In addition, the shape of each through hole may be the same, and may be different, which is not particularly limited in this embodiment of the present application. For example, the area of each through hole may be the same or different. For another example, the through holes in the first stress auxiliary dispersion region 122 and the second stress auxiliary dispersion region 114 may have the same shape or different shapes, or the areas of the through holes in the first stress auxiliary dispersion region 122 and the second stress auxiliary dispersion region 114 may have the same area or different areas, or a part of the through holes in the first stress auxiliary dispersion region 122 and the second stress auxiliary dispersion region 114 may have the same area and a part of the through holes may have different areas, which is not specifically limited in the embodiments of the present application.
In one possible embodiment, the second stress auxiliary dispersion area 114 is disposed between the two sides of the pattern area 112 near the second mask area 120 and the cutting line 130, or in other possible embodiments, the second stress auxiliary dispersion area 114 is disposed between one side of the pattern area 112 near the second mask area 120 and the cutting line 130, and the second stress auxiliary dispersion area 114 is not disposed on the other side.
The relevant parameters in the above examples are further described in the following with reference to a large amount of experimental data of force cloud charts of the inventor, and it should be understood that the specific parameters defined below are all determined by the inventor through a large amount of creative experiments after creative research, and will bring unexpected technical effects to the application for those skilled in the art. The following characteristic parameters should be considered as being non-obvious to a person skilled in the art without gaining any insight into the relevant prior art. Further, it should be understood that numbers describing the number of attributes or positional relationships (such as parallel or perpendicular relationships) are used in the embodiments described below, and such numbers used in the description of the embodiments should be understood as approximations in some examples. Unless otherwise indicated, these approximations may indicate that the numerical values recited are susceptible to variation within a certain margin of error (e.g., +/-20%). Likewise, such positional relationships, as used in the description of the embodiments, should be understood to be approximate in some examples, e.g., a parallel relationship may refer to being allowed to float within 10 degrees if perfectly parallel, and a perpendicular relationship may refer to being allowed to float within 10 degrees if perfectly perpendicular. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximations that may vary depending upon the desired properties of the individual embodiments. In some embodiments, the numerical parameter should take into account the specified significant digits and employ a general digit preserving approach. Notwithstanding that the numerical ranges and parameters setting forth the broad scope of the range are approximations, in the specific examples, such numerical values are set forth as precisely as possible within the scope of the application.
In one possible embodiment, referring to fig. 3, the ratio of the width D1 of the first stress auxiliary dispersion area 122 in the direction parallel to the cutting line 130 to the width D of the metal mask 100 in the direction parallel to the cutting line 130 ranges from D1/D to 85% to 99%. In detail, through the research of the inventor of the present application, when the D1/D is 85% to 99%, the uneven force originally transmitted to the pattern region 112 by the clamping jaw 200 can be absorbed and dispersed to the second stress auxiliary dispersion region 114, so that the stress uniformity and the stretching precision of the pattern region 112 are improved, and when the D1/D is lower than 85%, the uneven force originally transmitted to the pattern region 112 by the clamping jaw 200 cannot be completely or well absorbed and dispersed to the second stress auxiliary dispersion region 114, and a part of the uneven force still stays to the pattern region 112, so that the stress unevenness of the pattern region 112 is caused. Illustratively, in some alternative embodiments, D1/D may be 85% -86%, 86% -87%, 87% -88%, 88% -89%, 89% -90%, 91% -92%, 92% -93%, 93% -94%, 94% -95%, 95% -96%, 96% -97%, 97% -98%, 98% -99%, and the like, but is not limited thereto.
In one possible embodiment, referring to fig. 3, the ratio of the width D2 of the second auxiliary stress dispersion area 114 in the direction parallel to the cutting line 130 to the width D of the metal mask 100 in the direction parallel to the cutting line 130 ranges from D2/D to 90% to 99%. In detail, through the research of the inventor of the present application, when the D2/D is 90% to 99%, the uneven force originally transmitted to the pattern region 112 by the clamping jaw 200 can be absorbed and dispersed to the second stress auxiliary dispersion region 114, so that the stress uniformity and the stretching precision of the pattern region 112 are improved, and when the D2/D is lower than 90%, the uneven force originally transmitted to the pattern region 112 by the clamping jaw 200 cannot be completely or well absorbed and dispersed to the second stress auxiliary dispersion region 114, and a part of the uneven force still stays to the pattern region 112, so that the stress unevenness of the pattern region 112 is caused. Illustratively, in some alternative embodiments, D2/D may be, but is not limited to, 90% -91%, 91% -92%, 92% -83%, 93% -94%, 94% -95%, 95% -96%, 96% -97%, 97% -98%, 98% -99%, etc.
In one possible embodiment, referring to fig. 3, the width D2 of the second auxiliary stress dispersion area 114 in the direction parallel to the scribe line 130 is greater than the width D3 of the pattern area 112 in the direction parallel to the scribe line 130. In detail, through research by the inventors of the present application, it is found that when D2 is greater than D3, the uneven force originally transmitted to the pattern region 112 by the clamping jaw 200 can be absorbed and dispersed to the second stress auxiliary dispersion area 114, so that the stress uniformity and the stretching precision of the pattern region 112 are improved, and when D2 is less than or equal to D3, the uneven force originally transmitted to the pattern region 112 by the clamping jaw 200 cannot be completely absorbed and dispersed to the second stress auxiliary dispersion area 114, and still stays on the pattern region 112 by a part of the uneven force, so that the stress of the pattern region 112 is uneven.
In one possible embodiment, please refer to fig. 3, the width d of the second auxiliary stress dispersion area 114 in the direction perpendicular to the cutting line 130 is 6-10 um.
In one possible embodiment, referring to fig. 3, the ratio of the width D3 of the pattern region 112 parallel to the cutting line 130 to the width D of the metal mask 100 parallel to the cutting line 130 ranges from D3/D to 89.5% to 98.5%. In detail, through the research of the inventor of the present application, when the D3/D is 89.5% to 98.5%, the uneven force originally transmitted to the pattern region 112 by the clamping jaw 200 can be absorbed and dispersed to the second stress auxiliary dispersion area 114, so that the stress uniformity and the stretching precision of the pattern region 112 are improved, and when the D3/D is less than 89.5%, the uneven force originally transmitted to the pattern region 112 by the clamping jaw 200 cannot be completely or well absorbed and dispersed to the second stress auxiliary dispersion area 114, and a part of the uneven force still stays to the pattern region 112, so that the stress unevenness of the pattern region 112 is caused. Illustratively, in some alternative embodiments, D3/D may be 89.5% -90%, 90% -90.5%, 90.5% -91%, 91% -91.5%, 92% -92.5%, 95% -95.5%, 96% -97.5%, 97.5% -98%, 98% -98.5%, and the like, but is not limited thereto.
In one possible embodiment, the distance between the first stress auxiliary dispersion area 122 and the cutting line 130 may be flexibly adjusted according to the situation of the stress simulation cloud image, for example, after the research of the present inventors, the distance between the first stress auxiliary dispersion area 122 and the cutting line 130 may be 4-6 mm.
In a possible embodiment, the distance between the second stress auxiliary dispersion area 114 and the cutting line 130 can be flexibly adjusted according to the situation of the stress simulation cloud chart, for example, after the research of the inventor of the present application, the distance between the second stress auxiliary dispersion area 114 and the cutting line 130 is 8-12 mm.
In a possible implementation manner, the etching manner of the first stress auxiliary dispersion area 122 may include, but is not limited to, a slot/slot, etc., the etching manner of the second stress auxiliary dispersion area 114 may include, but is not limited to, a slot/slot, etc., and the etching manner of the pattern area 112 may include, but is not limited to, a slot/slot, etc. The etching manner of the second auxiliary stress dispersion region 114 and the etching manner of the pattern region 112 may be the same or different. For example, the inventors of the present application have found that, since the second stress auxiliary dispersion region 114 is closer to the pattern region 112, when the same pattern structure is formed in the stress propagation process if the etching manner of the second stress auxiliary dispersion region 114 and the etching manner of the pattern region 112 are the same, the dispersion effect of the second stress auxiliary dispersion region 114 is better, and the stress uniformity of the pattern region 112 can be further improved.
It should be noted that the slot/slot manner can be distinguished according to the shape of the opening, and according to the difference of the shapes of the openings, the slot etching manner can be understood as a slot type etching manner, and the shape of the opening etched immediately is a slot shape; the slit etching method can be understood as a slit etching method, i.e., the shape of the etched opening is a slit shape.
Based on the same inventive concept, the present application further provides a display panel, which includes one or more metal mask plates 100 in the foregoing embodiments.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this application belongs. The use of "first," "second," and similar terms in the description and in the claims does not indicate any order, quantity, or importance, but rather is used to distinguish one element from another. Also, the use of the terms "a" or "an" and the like do not denote a limitation of quantity, but rather denote the presence of at least one. "plurality" or "a number" means two or more. The word "comprising" or "comprises", and the like, means that the element or item listed as preceding "comprising" or "includes" covers the element or item listed as following "comprising" or "includes" and its equivalents, and does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. As used in this specification and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and/or" as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items.
The embodiments described above are only a part of the embodiments of the present application, and not all of the embodiments. The components of the embodiments of the present application, as generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations. Thus, the detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the application, but is merely representative of selected embodiments of the application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims. Moreover, all other embodiments that can be made available by a person skilled in the art without making any inventive step based on the embodiments of the present application shall fall within the scope of protection of the present application.

Claims (10)

1. The utility model provides a metal mask plate which characterized in that, metal mask plate includes:
a first mask region including a pattern region;
the second mask regions are respectively positioned at two sides of the first mask region in the extension direction, wherein the first mask region and the second mask region are distinguished by cutting lines;
a first stress assisted distraction region located within the second mask region;
a second stress auxiliary dispersion area located between the pattern area and the cutting line.
2. The metal mask of claim 1, wherein the ratio of the width of the first stress auxiliary dispersion area parallel to the cutting line direction to the width of the metal mask parallel to the cutting line direction is in the range of 85% to 99%.
3. A metal mask according to claim 1, wherein the ratio of the width of the second auxiliary stress dispersion region parallel to the cutting line direction to the width of the metal mask parallel to the cutting line direction is in the range of 90% to 99%.
4. A metal mask according to claim 1, wherein the width of the second auxiliary stress dispersion region in a direction parallel to the cutting line is larger than the width of the pattern region in a direction parallel to the cutting line.
5. The metal mask plate according to claim 1, wherein the width of the second stress auxiliary dispersion region perpendicular to the cutting line direction is 6-10 um.
6. A metal mask according to claim 1, wherein the ratio of the width of the pattern region in the direction parallel to the cutting line to the width of the metal mask in the direction parallel to the cutting line is in the range of 89.5% to 98.5%.
7. The metal mask plate according to claim 1, wherein the distance between the first stress auxiliary dispersion region and the cutting line is in a range of 4 to 6 mm.
8. The metal mask plate according to claim 1, wherein the distance between the second stress auxiliary dispersion region and the cutting line is in a range of 8-12 mm.
9. A metal mask according to any one of claims 1 to 8, wherein the second stress auxiliary dispersion region and the pattern region use the same etching pattern.
10. A display panel comprising a pixel unit formed by performing pixel evaporation on a pattern region of a metal mask according to any one of claims 1 to 9.
CN202110250935.5A 2021-03-08 2021-03-08 Metal mask plate and display panel Pending CN113025957A (en)

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CN111455314A (en) * 2020-06-08 2020-07-28 京东方科技集团股份有限公司 Accurate metal mask board and have its mask board subassembly
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CN205676528U (en) * 2016-06-17 2016-11-09 鄂尔多斯市源盛光电有限责任公司 Mask plate
CN109844974A (en) * 2016-09-13 2019-06-04 Lg伊诺特有限公司 Deposition mas metal plate and deposition mas and its manufacturing method
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