CN113021159A - Polishing pad for fine polishing of electronic display screen and production method thereof - Google Patents

Polishing pad for fine polishing of electronic display screen and production method thereof Download PDF

Info

Publication number
CN113021159A
CN113021159A CN202110268631.1A CN202110268631A CN113021159A CN 113021159 A CN113021159 A CN 113021159A CN 202110268631 A CN202110268631 A CN 202110268631A CN 113021159 A CN113021159 A CN 113021159A
Authority
CN
China
Prior art keywords
parts
polishing
temperature
layer
electronic display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202110268631.1A
Other languages
Chinese (zh)
Other versions
CN113021159B (en
Inventor
李加海
杨惠明
李元祥
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Anhui Hechen New Material Co ltd
Original Assignee
Anhui Hechen New Material Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anhui Hechen New Material Co ltd filed Critical Anhui Hechen New Material Co ltd
Priority to CN202110268631.1A priority Critical patent/CN113021159B/en
Publication of CN113021159A publication Critical patent/CN113021159A/en
Application granted granted Critical
Publication of CN113021159B publication Critical patent/CN113021159B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B29/00Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B24D18/0009Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using moulds or presses
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B24D18/009Tools not otherwise provided for

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Laminated Bodies (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

The invention discloses a polishing pad for fine polishing of an electronic display screen and a production method thereof, wherein the polishing pad for fine polishing of the electronic display screen comprises a base layer, a connecting layer and a polishing layer, wherein the base layer is prepared from the following raw materials in parts by weight: 20-30 parts of epoxy resin, 3-5 parts of curing agent, 20-40 parts of nano silicon dioxide, 6-8 parts of graphene, 3-5 parts of flame retardant, 1-3 parts of antistatic agent, 3-5 parts of coupling agent and 1-2 parts of quartz particles; the connecting layer is prepared from the following raw materials in parts by weight: 6-18 parts of EVA, 1-3 parts of rosin resin, 3-7 parts of low molecular weight polyethylene, 1-3 parts of plasticizer, 1-3 parts of antioxidant and 1-3 parts of antibacterial agent; the polishing layer is synthesized by adding a curing agent, expandable microspheres, a catalyst, a surfactant and a defoaming agent into modified polyurethane, and the finally obtained polishing pad is good in polishing effect and strong in durability.

Description

Polishing pad for fine polishing of electronic display screen and production method thereof
Technical Field
The invention relates to the technical field of display screen polishing pad preparation, in particular to a polishing pad for fine polishing of an electronic display screen and a production method thereof.
Background
The polishing pad is also called polishing leather, polishing cloth, polishing sheet and important auxiliary materials for determining the surface quality in chemical mechanical polishing. Polishing pads can be classified into abrasive polishing pads and non-abrasive polishing pads according to whether the polishing pads contain abrasives or not; according to different materials, the polishing pad can be divided into a polyurethane polishing pad, a non-woven fabric polishing pad and a composite polishing pad; the surface structure can be roughly classified into a planar type, a mesh type, and a spiral type. Which has the function of delivering the polishing liquid to different regions of the polishing pad effectively and uniformly; smoothly discharging the polished reactant, scraps and the like to achieve the removal effect; maintaining the thin film of polishing solution on the surface of the polishing pad so that the chemical reaction is sufficiently performed; keeping the polishing process stable and the surface not deformed so as to obtain better wafer surface appearance, and the like.
In the process of production and processing of the electronic display screen, the surface of the electronic display screen needs to be polished, the convex uneven components on the surface of the display screen are polished and smoothed, the display effect is further improved, the general polishing process is divided into multiple polishing, and the final one-step fine polishing can enable the display screen to present a perfect mirror surface effect, so that the polishing pad for fine polishing of the display screen needs to have good polishing effect, and the characteristics of strong durability can meet the production and use requirements at the current stage.
Disclosure of Invention
Technical problem to be solved
Aiming at the defects of the prior art, the invention provides a polishing pad for fine polishing of an electronic display screen and a production method thereof, which are used for solving the problems in the background art.
(II) technical scheme
In order to achieve the purpose, the invention is realized by the following technical scheme: a polishing pad for fine polishing of an electronic display screen comprises a base layer, a connecting layer and a polishing layer;
the polishing pad for fine polishing of the electronic display screen is prepared by the following steps:
step S1: placing the base layer in a vacuum hot-pressing laminating machine, setting the vacuum degree of the vacuum hot-pressing laminating machine to be 0.1-0.3MPa, laminating the connecting layer on the base layer at the temperature of 110-130 ℃, controlling the laminating time to be 1-3min, slowly reducing the temperature to 40 ℃ after the laminating is finished, then preserving the heat at the temperature of 40 ℃ for 20-30min, and cooling to 15-20 ℃ after the heat preservation is finished to form a first plate layer;
step S2: and (5) attaching the first laminate obtained in the step (S1) and the polishing layer by using a vacuum hot-pressing attaching machine, controlling the vacuum degree of the vacuum hot-pressing attaching machine to be 0.4-0.5MPa, the attaching temperature to be 120-140 ℃, attaching time to be 50-60S, cooling to be 15-25 ℃ after attaching is finished, cutting and cutting to obtain the polishing pad for fine polishing of the electronic display screen.
Further, the base layer is prepared from the following raw materials in parts by weight: 20-30 parts of epoxy resin, 3-5 parts of curing agent, 20-40 parts of nano silicon dioxide, 6-8 parts of graphene, 3-5 parts of flame retardant, 1-3 parts of antistatic agent, 3-5 parts of coupling agent and 1-2 parts of quartz particles;
the base layer is prepared by the following steps:
step S11: adding epoxy resin and graphene into a reaction kettle, dispersing for 10-20min at the temperature of 90-100 ℃ and the rotation speed of 300-400r/min, then adding a curing agent and nano silicon dioxide into the reaction kettle at the temperature of 80 ℃ and the rotation speed of 600r/min, and stirring for 20-30min at the temperature of 70-80 ℃ and the rotation speed of 800-900r/min after the addition is finished to obtain a first mixed material;
step S12: adding a flame retardant, an antistatic agent and a coupling agent into the first mixed material at the temperature of 60 ℃ and the rotation speed of 500-;
step S13: and (4) placing the mixed material II obtained in the step (S12) in a mold with the temperature of 120 ℃, controlling, then carrying out heat preservation for 10-15min under the condition of the temperature of 130-.
Further, the curing agent is any one of diethylenetriamine, triethylene tetramine, diethylaminopropylamine, maleic anhydride and phthalic anhydride, the flame retardant is any one of melamine polyphosphate, coated red phosphorus and dimethyl methyl phosphate, the antistatic agent is tetrabromobisphenol A, and the coupling agent is a silane coupling agent.
Further, the connecting layer is prepared from the following raw materials in parts by weight: 6-18 parts of EVA, 1-3 parts of rosin resin, 3-7 parts of low molecular weight polyethylene, 1-3 parts of plasticizer, 1-3 parts of antioxidant and 1-3 parts of antibacterial agent;
the connecting layer is prepared by the following steps:
step S21: adding EVA, rosin resin, low molecular weight polyethylene, a plasticizer, an antioxidant and an antibacterial agent into a stirring kettle, and stirring and mixing for 30-40min at the temperature of 200-;
step S22: and (4) adding the mixture prepared in the step (S21) into a mold, cooling to 10 ℃ at a cooling speed of 5-10 ℃/min, and demolding after cooling to obtain the connecting layer.
Further, it is characterized in that: the plasticizer is any one of phthalate, di (2-ethyl) hexyl phthalate and epoxidized soybean oil, the antioxidant is any one of 2, 6-di-tert-butyl-p-cresol and dilauryl thiodipropionate, and the antibacterial agent is any one of thiabendazole, zinc pyrithione and 2-n-zinc-4-isothiazole-3-ketone.
Further, the polishing layer is made by the steps of:
step S31: 1, 4-butanediol is added into a three-neck flask provided with a magnetic stirring device, a thermometer and a vacuum tube, and the three-neck flask is placed at the temperature of 50-60 ℃ for vacuum dehydration for 5-7 h;
step S32: adding polyethylene glycol into a reaction kettle which is cleaned and dried, introducing nitrogen, stirring for 5min at the temperature of 100-;
step S33: adding 2, 4-toluene diisooxolate, diethanolamine, dehydrated 1, 4-butanediol obtained in step S31 and intermediate 1 obtained in step S32 into a clean and dry reaction kettle, raising the temperature to 80-85 ℃ under the protection of nitrogen, stirring and reacting for 0.5-1h under the condition of the rotation speed of 1000-1200r/min, then adding aminopropyltriethoxysilane into the reaction kettle, continuing to react for 2-3h under the condition of the temperature of 85 ℃ and the rotation speed of 800r/min, adding acetone after the reaction is finished, adding deionized water and trimethylolpropane, stirring for 40-60min under the condition of the rotation speed of 500-1000r/min, and then removing the acetone through vacuum distillation to obtain intermediate 2;
step S34: adding the intermediate 2, a curing agent, expandable microspheres, a catalyst, a surfactant and a defoaming agent into a reaction kettle, stirring and reacting for 10-15min at the temperature of 150-;
step S35: preheating a mould to 70-80 ℃, then adding the intermediate 3 obtained in the step S34 into the mould, standing for 2min at 80 ℃, curing for 16h at 100 ℃ after demoulding, and standing for 48-72h at room temperature after curing to obtain the polishing layer.
Further, in step S32, the dosage ratio of the polyethylene glycol, the catalyst, phthalic anhydride, propylene glycol, ethylene glycol and p-hydroxyphenylethanol is: 2 g: 0.01 g: 3.5 g: 1mL of: 1.5 mL: 1g, the catalyst is di-n-butylamine, the dosage ratio of the 2, 4-toluene diisooxolate, diethanolamine, 1, 4-butanediol, intermediate 1 and aminopropyltriethoxysilane in the step S33 is 1 g: 0.08 g: 6mL of: 4 g: 0.5g, wherein the dosage ratio of the intermediate 2, the curing agent, the expandable microspheres, the catalyst, the surfactant and the defoaming agent in the step S34 is 10 g: 0.1 g: 0.01-0.02 g: 0.05 g: 0.1 g: 0.1g, the curing agent is any one of a polyol curing agent and an alcohol amine curing agent, the catalyst is an amine catalyst, the surfactant is sodium dodecyl sulfate, and the defoaming agent is polyether modified silicone oil.
Furthermore, the thickness of the base layer is 0.2-0.4mm, the thickness of the connecting layer is 0.06-0.08mm, and the thickness of the polishing layer is 0.35-0.45 mm.
A production method of a polishing pad for fine polishing of an electronic display screen comprises the following steps:
step S1: placing the base layer in a vacuum hot-pressing laminating machine, setting the vacuum degree of the vacuum hot-pressing laminating machine to be 0.1-0.3MPa, laminating the connecting layer on the base layer at the temperature of 110-130 ℃, controlling the laminating time to be 1-3min, slowly reducing the temperature to 40 ℃ after the laminating is finished, then preserving the heat at the temperature of 40 ℃ for 20-30min, and cooling to 15-20 ℃ after the heat preservation is finished to form a first plate layer;
step S2: and (5) attaching the first laminate obtained in the step (S1) and the polishing layer by using a vacuum hot-pressing attaching machine, controlling the vacuum degree of the vacuum hot-pressing attaching machine to be 0.4-0.5MPa, the attaching temperature to be 120-140 ℃, attaching time to be 50-60S, cooling to be 15-25 ℃ after attaching is finished, cutting and cutting to obtain the polishing pad for fine polishing of the electronic display screen.
(III) advantageous effects
The invention provides a polishing pad for fine polishing of an electronic display screen and a production method thereof. Compared with the prior art, the method has the following beneficial effects: the polishing pad for fine polishing of the electronic display screen is composed of three layers, wherein the base layer adopts epoxy resin as a base material, and graphene, nano silicon dioxide and quartz particles are added, so that gaps of the prepared base layer are filled and filled, the strength of the base layer is higher, the durability is higher, and the polishing pad has high temperature resistance and is not easy to generate static electricity in the using process by adding the flame retardant and the antistatic agent, so that the influence generated in the working process is avoided; the polishing layer is prepared by preparing modified polyurethane and then adding expandable microspheres to form compact and uniform micropores, so that a better polishing effect can be realized during polishing, in addition, in the preparation process of the polyurethane, firstly, polyol and anhydride are used for generating polyester polyol under the action of a catalyst, p-hydroxy phenyl ethanol is added in the process, and phenolic hydroxyl with antioxidant and antibacterial effects is introduced into a chain of the polyester polyol, so that the using durability of the polyester polyol is improved; the polyurethane is modified by using the organic silicon aminopropyl triethoxysilane in the process of generating the polyurethane prepolymer under the action of isocyanate, and the organic silicon has extremely low surface energy, so that the synthesized polyurethane has good water resistance and chemical resistance, a connecting layer is synthesized, the base layer and the polishing layer are connected together for an adhesive layer, and an antioxidant and an antibacterial agent are added during preparation, so that the durability of the whole polishing pad is further improved, and the polishing pad for fine polishing of the display screen with good polishing effect and strong durability is finally obtained.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
A polishing pad for fine polishing of an electronic display screen comprises a base layer, a connecting layer and a polishing layer;
the polishing pad for fine polishing of the electronic display screen is prepared by the following steps:
step S1: placing the base layer in a vacuum hot-pressing laminating machine, setting the vacuum degree of the vacuum hot-pressing laminating machine to be 0.1MPa, laminating the connecting layer on the base layer at the temperature of 110 ℃, controlling the laminating time to be 1min, slowly reducing the temperature to 40 ℃ after the laminating is finished, then preserving the heat at the temperature of 40 ℃ for 20min, and cooling to 15 ℃ after the heat preservation is finished to form a first plate layer;
step S2: and (5) attaching the first laminate obtained in the step (S1) and the polishing layer by using a vacuum hot-pressing attaching machine, controlling the vacuum degree of the vacuum hot-pressing attaching machine to be 0.4MPa, the attaching temperature to be 120 ℃ and the attaching time to be 50S, cooling to 15 ℃ after attaching is finished, cutting and cutting to obtain the polishing pad for fine polishing of the electronic display screen.
Wherein the base layer is prepared from the following raw materials in parts by weight: 20 parts of epoxy resin, 3 parts of diethylenetriamine, 20 parts of nano silicon dioxide, 6 parts of graphene, 3 parts of melamine polyphosphate, 1 parts of tetrabromobisphenol A, 3 parts of a silane coupling agent and 1 part of quartz particles;
the base layer is prepared by the following steps:
step S11: adding epoxy resin and graphene into a reaction kettle, dispersing for 10min at the temperature of 90 ℃ and the rotating speed of 300r/min, then adding diethylenetriamine and nano-silica into the reaction kettle at the temperature of 80 ℃ and the rotating speed of 600r/min, and stirring for 20min at the temperature of 70 ℃ and the rotating speed of 800r/min after the addition is finished to obtain a first mixed material;
step S12: adding melamine polyphosphate, tetrabromobisphenol A and a silane coupling agent into the mixed material I at the temperature of 60 ℃ and the rotating speed of 500r/min, stirring and mixing for 20min at the temperature of 60 ℃ and the rotating speed of 600r/min, keeping the temperature and the rotating speed unchanged after mixing is finished, adding quartz particles into a reaction kettle, and stirring to obtain a mixed material II;
step S13: and (5) placing the mixed material II obtained in the step (S12) in a mold with the temperature of 120 ℃, controlling, then carrying out heat preservation for 10min at the temperature of 130 ℃, then cooling to room temperature, then heating to 140 ℃, carrying out heat preservation for 20min, cooling and demolding after finishing heat preservation, and obtaining the base layer.
The connecting layer is prepared from the following raw materials in parts by weight: 6 parts of EVA (ethylene-vinyl acetate), 1 part of rosin resin, 3 parts of low-molecular polyethylene, 1 part of epoxidized soybean oil, 1 part of dilauryl thiodipropionate and 1 part of zinc pyrithione;
the connecting layer is prepared by the following steps:
step S21: adding EVA, rosin resin, low-molecular polyethylene, epoxidized soybean oil, dilauryl thiodipropionate and zinc pyrithione into a stirring kettle, and stirring and mixing for 30min at the temperature of 200 ℃ and the rotating speed of 500r/min to obtain a mixture;
step S22: and (4) adding the mixture prepared in the step (S21) into a mold, cooling to 10 ℃ at a cooling speed of 5 ℃/min, and demolding after cooling to obtain the connecting layer.
Wherein the polishing layer is made by the steps of:
step S31: 1, 4-butanediol is added into a three-neck flask provided with a magnetic stirring device, a thermometer and a vacuum tube, and the three-neck flask is placed at 50 ℃ for vacuum dehydration for 5 hours;
step S32: adding polyethylene glycol into a reaction kettle which is cleaned and dried, introducing nitrogen, stirring for 5min at the temperature of 100 ℃ and the rotating speed of 200r/min, keeping the temperature and the rotating speed unchanged, sequentially adding a catalyst and phthalic anhydride, reacting for 1h at the temperature of 110 ℃ after the addition is finished, then adding propylene glycol, ethylene glycol and p-hydroxyphenylethanol, raising the temperature to 200 ℃, reacting for 4h at constant temperature, closing the nitrogen after the reaction is combined, removing water in a reaction system by using a vacuum pump, and cooling to 80 ℃ to obtain an intermediate 1;
step S33: adding 2, 4-toluene diisooxolate, diethanolamine, dehydrated 1, 4-butanediol obtained in step S31 and intermediate 1 obtained in step S32 into a clean and dry reaction kettle, raising the temperature to 80 ℃ under the protection of nitrogen, stirring and reacting for 0.5h at the rotation speed of 1000r/min, then adding aminopropyl triethoxysilane into the reaction kettle, continuing to react for 2h at the temperature of 85 ℃ and the rotation speed of 800r/min, adding acetone after the reaction is finished, adding deionized water and trimethylolpropane, stirring for 40min at the rotation speed of 500r/min, and then removing the acetone by vacuum distillation to obtain intermediate 2;
step S34: adding the intermediate 2, an alcohol amine curing agent, expandable microspheres, an amine catalyst, sodium dodecyl sulfate and polyether modified silicone oil into a reaction kettle, stirring and reacting for 10min at the temperature of 150 ℃ and the rotating speed of 800r/min, and defoaming in vacuum after stirring until no bubbles are generated to obtain an intermediate 3;
step S35: preheating a mould to 70 ℃, then adding the intermediate 3 obtained in the step S34 into the mould, standing for 2min at 80 ℃, curing for 16h at 100 ℃ after demoulding, and standing for 48h at room temperature after curing to obtain the polishing layer.
Example 2
A polishing pad for fine polishing of an electronic display screen comprises a base layer, a connecting layer and a polishing layer;
the polishing pad for fine polishing of the electronic display screen is prepared by the following steps:
step S1: placing the base layer in a vacuum hot-pressing laminating machine, setting the vacuum degree of the vacuum hot-pressing laminating machine to be 0.2MPa, laminating the connecting layer on the base layer at the temperature of 120 ℃, controlling the laminating time to be 2min, slowly reducing the temperature to 40 ℃ after the laminating is finished, then preserving the heat at the temperature of 40 ℃ for 25min, and cooling to 17.5 ℃ after the heat preservation is finished to form a first plate layer;
step S2: and (5) attaching the first laminate obtained in the step (S1) and the polishing layer by using a vacuum hot-pressing attaching machine, controlling the vacuum degree of the vacuum hot-pressing attaching machine to be 0.45MPa, the attaching temperature to be 130 ℃ and the attaching time to be 55S, cooling to 20 ℃ after attaching is finished, cutting and cutting to obtain the polishing pad for fine polishing of the electronic display screen.
Wherein the base layer is prepared from the following raw materials in parts by weight: 25 parts of epoxy resin, 4 parts of diethylenetriamine, 30 parts of nano silicon dioxide, 7 parts of graphene, 4 parts of melamine polyphosphate, 2 parts of tetrabromobisphenol A, 4 parts of a silane coupling agent and 1.5 parts of quartz particles;
the base layer is prepared by the following steps:
step S11: adding epoxy resin and graphene into a reaction kettle, dispersing for 15min at the temperature of 95 ℃ and the rotating speed of 350r/min, then adding diethylenetriamine and nano-silica into the reaction kettle at the temperature of 80 ℃ and the rotating speed of 600r/min, and stirring for 25min at the temperature of 75 ℃ and the rotating speed of 850r/min after the addition is finished to obtain a first mixed material;
step S12: adding melamine polyphosphate, tetrabromobisphenol A and a silane coupling agent into the mixed material I at the temperature of 60 ℃ and the rotating speed of 600r/min, stirring and mixing for 25min at the temperature of 70 ℃ and the rotating speed of 700r/min, keeping the temperature and the rotating speed unchanged after mixing is finished, adding quartz particles into a reaction kettle, and stirring to obtain a mixed material II;
step S13: and (4) placing the mixed material II obtained in the step (S12) in a mold with the temperature of 120 ℃, controlling, then carrying out heat preservation for 12.5min at the temperature of 140 ℃, then cooling to room temperature, then heating to 145 ℃, carrying out heat preservation for 20min, cooling and demolding after finishing heat preservation, and obtaining the base layer.
The connecting layer is prepared from the following raw materials in parts by weight: 12 parts of EVA (ethylene-vinyl acetate), 2 parts of rosin resin, 5 parts of low-molecular polyethylene, 2 parts of epoxidized soybean oil, 2 parts of dilauryl thiodipropionate and 2 parts of zinc pyrithione;
the connecting layer is prepared by the following steps:
step S21: adding EVA, rosin resin, low-molecular polyethylene, epoxidized soybean oil, dilauryl thiodipropionate and zinc pyrithione into a stirring kettle, and stirring and mixing for 35min at the temperature of 250 ℃ and the rotating speed of 600r/min to obtain a mixture;
step S22: and (4) adding the mixture prepared in the step (S21) into a mold, cooling to 10 ℃ at a cooling speed of 7.5 ℃/min, and demolding after cooling to obtain the connecting layer.
Wherein the polishing layer is made by the steps of:
step S31: 1, 4-butanediol is added into a three-neck flask provided with a magnetic stirring device, a thermometer and a vacuum tube, and the three-neck flask is placed at 55 ℃ for vacuum dehydration for 6 hours;
step S32: adding polyethylene glycol into a reaction kettle which is cleaned and dried, introducing nitrogen, stirring for 5min at the temperature of 110 ℃ and the rotating speed of 300r/min, keeping the temperature and the rotating speed unchanged, sequentially adding a catalyst and phthalic anhydride, reacting for 1.5h at the temperature of 110 ℃ after the addition is finished, then adding propylene glycol, ethylene glycol and p-hydroxyphenylethanol, raising the temperature to 202.5 ℃, reacting for 5h at a constant temperature, closing the nitrogen after the reaction is combined, removing water in a reaction system by using a vacuum pump, and cooling to 80 ℃ to obtain an intermediate 1;
step S33: adding 2, 4-toluene diisooxolate, diethanolamine, dehydrated 1, 4-butanediol obtained in step S31 and intermediate 1 obtained in step S32 into a clean and dry reaction kettle, raising the temperature to 82.5 ℃ under the protection of nitrogen, stirring and reacting for 0.75h at the rotation speed of 1100r/min, then adding aminopropyltriethoxysilane into the reaction kettle, continuing to react for 2.5h at the temperature of 85 ℃ and the rotation speed of 800r/min, adding acetone after the reaction is finished, adding deionized water and trimethylolpropane, stirring for 50min at the rotation speed of 750r/min, and then removing the acetone by vacuum distillation to obtain intermediate 2;
step S34: adding the intermediate 2, an alcohol amine curing agent, expandable microspheres, an amine catalyst, sodium dodecyl sulfate and polyether modified silicone oil into a reaction kettle, stirring and reacting for 12.5min at the temperature of 160 ℃ and the rotating speed of 900r/min, and defoaming in vacuum after stirring until no bubbles are generated to obtain an intermediate 3;
step S35: preheating a mould to 75 ℃, then adding the intermediate 3 obtained in the step S34 into the mould, standing for 2min at 80 ℃, curing for 16h at 100 ℃ after demoulding, and standing for 60h at room temperature after curing to obtain the polishing layer.
Example 3
A polishing pad for fine polishing of an electronic display screen comprises a base layer, a connecting layer and a polishing layer;
the polishing pad for fine polishing of the electronic display screen is prepared by the following steps:
step S1: placing the base layer in a vacuum hot-pressing laminating machine, setting the vacuum degree of the vacuum hot-pressing laminating machine to be 0.3MPa, laminating the connecting layer on the base layer at the temperature of 130 ℃, controlling the laminating time to be 3min, slowly reducing the temperature to 40 ℃ after the laminating is finished, then preserving the heat at the temperature of 40 ℃ for 30min, and cooling to 20 ℃ after the heat preservation is finished to form a first plate layer;
step S2: and (5) attaching the first laminate obtained in the step (S1) and the polishing layer by using a vacuum hot-pressing attaching machine, controlling the vacuum degree of the vacuum hot-pressing attaching machine to be 0.5MPa, attaching the first laminate and the polishing layer at the temperature of 140 ℃ for 60S, cooling to 25 ℃ after attaching is finished, cutting and cutting to obtain the polishing pad for fine polishing of the electronic display screen.
Wherein the base layer is prepared from the following raw materials in parts by weight: 30 parts of epoxy resin, 5 parts of diethylenetriamine, 40 parts of nano silicon dioxide, 8 parts of graphene, 5 parts of melamine polyphosphate, 3 parts of tetrabromobisphenol A, 5 parts of a silane coupling agent and 2 parts of quartz particles;
the base layer is prepared by the following steps:
step S11: adding epoxy resin and graphene into a reaction kettle, dispersing for 20min at the temperature of 100 ℃ and the rotating speed of 400r/min, then adding diethylenetriamine and nano-silica into the reaction kettle at the temperature of 80 ℃ and the rotating speed of 600r/min, and stirring for 30min at the temperature of 80 ℃ and the rotating speed of 900r/min after the addition is finished to obtain a first mixed material;
step S12: adding melamine polyphosphate, tetrabromobisphenol A and a silane coupling agent into the mixed material I at the temperature of 60 ℃ and the rotating speed of 700r/min, stirring and mixing for 30min at the temperature of 80 ℃ and the rotating speed of 800r/min, keeping the temperature and the rotating speed unchanged after mixing is finished, adding quartz particles into a reaction kettle, and stirring to obtain a mixed material II;
step S13: and (5) placing the mixed material II obtained in the step (S12) in a mold with the temperature of 120 ℃, controlling, then carrying out heat preservation for 15min at the temperature of 150 ℃, then cooling to room temperature, then heating to 150 ℃, carrying out heat preservation for 20min, cooling and demolding after finishing heat preservation, and obtaining the base layer.
The connecting layer is prepared from the following raw materials in parts by weight: 18 parts of EVA (ethylene-vinyl acetate), 3 parts of rosin resin, 7 parts of low-molecular polyethylene, 3 parts of epoxidized soybean oil, 3 parts of dilauryl thiodipropionate and 3 parts of zinc pyrithione;
the connecting layer is prepared by the following steps:
step S21: adding EVA, rosin resin, low-molecular polyethylene, epoxidized soybean oil, dilauryl thiodipropionate and zinc pyrithione into a stirring kettle, and stirring and mixing for 40min at the temperature of 300 ℃ and the rotating speed of 700r/min to obtain a mixture;
step S22: and (4) adding the mixture prepared in the step (S21) into a mold, cooling to 10 ℃ at a cooling speed of 10 ℃/min, and demolding after cooling to obtain the connecting layer.
Wherein the polishing layer is made by the steps of:
step S31: 1, 4-butanediol is added into a three-neck flask provided with a magnetic stirring device, a thermometer and a vacuum tube, and the three-neck flask is placed at 60 ℃ for vacuum dehydration for 7 hours;
step S32: adding polyethylene glycol into a reaction kettle which is cleaned and dried, introducing nitrogen, stirring for 5min at the temperature of 120 ℃ and the rotating speed of 400r/min, keeping the temperature and the rotating speed unchanged, sequentially adding a catalyst and phthalic anhydride, reacting for 2h at the temperature of 110 ℃ after the addition is finished, then adding propylene glycol, ethylene glycol and p-hydroxyphenylethanol, raising the temperature to 205 ℃, reacting for 6h at constant temperature, closing the nitrogen after the reaction is combined, removing water in a reaction system by using a vacuum pump, and cooling to 80 ℃ to obtain an intermediate 1;
step S33: adding 2, 4-toluene diisooxolate, diethanolamine, dehydrated 1, 4-butanediol obtained in step S31 and intermediate 1 obtained in step S32 into a clean and dry reaction kettle, raising the temperature to 85 ℃ under the protection of nitrogen, stirring and reacting for 1h at the rotation speed of 1200r/min, adding aminopropyltriethoxysilane into the reaction kettle, continuing to react for 3h at the temperature of 85 ℃ and the rotation speed of 800r/min, adding acetone after the reaction is finished, adding deionized water and trimethylolpropane, stirring for 60min at the rotation speed of 1000r/min, and removing the acetone by vacuum distillation to obtain intermediate 2;
step S34: adding the intermediate 2, an alcohol amine curing agent, expandable microspheres, an amine catalyst, sodium dodecyl sulfate and polyether modified silicone oil into a reaction kettle, stirring and reacting for 15min at the temperature of 170 ℃ and the rotating speed of 1000r/min, and defoaming in vacuum after stirring until no bubbles are generated to obtain an intermediate 3;
step S35: preheating a mould to 80 ℃, then adding the intermediate 3 obtained in the step S34 into the mould, standing for 2min at 80 ℃, curing for 16h at 100 ℃ after demoulding, and standing for 72h at room temperature after curing to obtain the polishing layer.
Wherein, the dosage ratio of the polyethylene glycol, the catalyst, the phthalic anhydride, the propylene glycol, the ethylene glycol and the p-hydroxyphenylethanol in the step S32 in the embodiments 1 to 3 is as follows: 2 g: 0.01 g: 3.5 g: 1mL of: 1.5 mL: 1g, the catalyst is di-n-butylamine, the dosage ratio of the 2, 4-toluene diisooxolate, diethanolamine, 1, 4-butanediol, intermediate 1 and aminopropyltriethoxysilane in the step S33 is 1 g: 0.08 g: 6mL of: 4 g: 0.5g, wherein the dosage ratio of the intermediate 2, the curing agent, the expandable microspheres, the catalyst, the surfactant and the defoaming agent in the step S34 is 10 g: 0.1 g: 0.01-0.02 g: 0.05 g: 0.1 g: 0.1 g.
Comparative example: a display screen polishing pad is commonly used in the market.
The polishing pads of examples 1-3 and comparative example were tested for performance by the following specific procedure:
(1) tensile strength tests, tested with reference to GB/T528-1998;
(2) tear strength testing, testing with reference to GB/T529-1999;
(3) testing the wear resistance by referring to QB/T2726-2005, and adopting a CS-10 grinding wheel, wherein the test condition load is 1000g, and the test revolution is 1000 r;
(4) the water resistance test comprises the steps of taking the samples of the examples 1-3 and the comparative example, cutting the samples into 2cm multiplied by 2cm thin film samples, soaking the samples in the same amount of physiological saline, standing for 12h, taking out the samples, weighing, and testing the water resistance by adopting the water absorption rate, wherein the water absorption rate (%) is (weight after test-weight before test)/weight before test multiplied by 100%;
the results obtained are shown in the following table:
Figure BDA0002973149870000131
it can be seen from the above table that examples 1-3 have good mechanical properties and significantly better wear resistance and excellent water resistance compared to the comparative examples.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims (9)

1. The utility model provides an electronic display screen is polishing pad for fine polishing which characterized in that: comprises a base layer, a connecting layer and a polishing layer;
the polishing pad for fine polishing of the electronic display screen is prepared by the following steps:
step S1: placing the base layer in a vacuum hot-pressing laminating machine, setting the vacuum degree of the vacuum hot-pressing laminating machine to be 0.1-0.3MPa, laminating the connecting layer on the base layer at the temperature of 110-130 ℃, controlling the laminating time to be 1-3min, slowly reducing the temperature to 40 ℃ after the laminating is finished, then preserving the heat at the temperature of 40 ℃ for 20-30min, and cooling to 15-20 ℃ after the heat preservation is finished to form a first plate layer;
step S2: and (5) attaching the first laminate obtained in the step (S1) and the polishing layer by using a vacuum hot-pressing attaching machine, controlling the vacuum degree of the vacuum hot-pressing attaching machine to be 0.4-0.5MPa, the attaching temperature to be 120-140 ℃, attaching time to be 50-60S, cooling to be 15-25 ℃ after attaching is finished, cutting and cutting to obtain the polishing pad for fine polishing of the electronic display screen.
2. The polishing pad for fine polishing of electronic display screens as claimed in claim 1, wherein: the base layer is prepared from the following raw materials in parts by weight: 20-30 parts of epoxy resin, 3-5 parts of curing agent, 20-40 parts of nano silicon dioxide, 6-8 parts of graphene, 3-5 parts of flame retardant, 1-3 parts of antistatic agent, 3-5 parts of coupling agent and 1-2 parts of quartz particles;
the base layer is prepared by the following steps:
step S11: adding epoxy resin and graphene into a reaction kettle, dispersing for 10-20min at the temperature of 90-100 ℃ and the rotation speed of 300-400r/min, then adding a curing agent and nano silicon dioxide into the reaction kettle at the temperature of 80 ℃ and the rotation speed of 600r/min, and stirring for 20-30min at the temperature of 70-80 ℃ and the rotation speed of 800-900r/min after the addition is finished to obtain a first mixed material;
step S12: adding a flame retardant, an antistatic agent and a coupling agent into the first mixed material at the temperature of 60 ℃ and the rotation speed of 500-;
step S13: and (4) placing the mixed material II obtained in the step (S12) in a mold with the temperature of 120 ℃, controlling, then carrying out heat preservation for 10-15min under the condition of the temperature of 130-.
3. The polishing pad for fine polishing of electronic display screens as claimed in claim 2, wherein: the curing agent is any one of diethylenetriamine, triethylene tetramine, diethylaminopropylamine, maleic anhydride and phthalic anhydride, the flame retardant is any one of melamine polyphosphate, coated red phosphorus and methyl dimethyl phosphate, the antistatic agent is tetrabromobisphenol A, and the coupling agent is a silane coupling agent.
4. The polishing pad for fine polishing of electronic display screens as claimed in claim 1, wherein: the connecting layer is prepared from the following raw materials in parts by weight: 6-18 parts of EVA, 1-3 parts of rosin resin, 3-7 parts of low molecular weight polyethylene, 1-3 parts of plasticizer, 1-3 parts of antioxidant and 1-3 parts of antibacterial agent;
the connecting layer is prepared by the following steps:
step S21: adding EVA, rosin resin, low molecular weight polyethylene, a plasticizer, an antioxidant and an antibacterial agent into a stirring kettle, and stirring and mixing for 30-40min at the temperature of 200-;
step S22: and (4) adding the mixture prepared in the step (S21) into a mold, cooling to 10 ℃ at a cooling speed of 5-10 ℃/min, and demolding after cooling to obtain the connecting layer.
5. The polishing pad for fine polishing of electronic display screens as claimed in claim 4, wherein: the plasticizer is any one of phthalate, di (2-ethyl) hexyl phthalate and epoxidized soybean oil, the antioxidant is any one of 2, 6-di-tert-butyl-p-cresol and dilauryl thiodipropionate, and the antibacterial agent is any one of thiabendazole, zinc pyrithione and 2-n-zinc-4-isothiazole-3-ketone.
6. The polishing pad for fine polishing of electronic display screens as claimed in claim 1, wherein: the polishing layer is made by the following steps:
step S31: 1, 4-butanediol is added into a three-neck flask provided with a magnetic stirring device, a thermometer and a vacuum tube, and the three-neck flask is placed at the temperature of 50-60 ℃ for vacuum dehydration for 5-7 h;
step S32: adding polyethylene glycol into a reaction kettle which is cleaned and dried, introducing nitrogen, stirring for 5min at the temperature of 100-;
step S33: adding 2, 4-toluene diisooxolate, diethanolamine, dehydrated 1, 4-butanediol obtained in step S31 and intermediate 1 obtained in step S32 into a clean and dry reaction kettle, raising the temperature to 80-85 ℃ under the protection of nitrogen, stirring and reacting for 0.5-1h under the condition of the rotation speed of 1000-1200r/min, then adding aminopropyltriethoxysilane into the reaction kettle, continuing to react for 2-3h under the condition of the temperature of 85 ℃ and the rotation speed of 800r/min, adding acetone after the reaction is finished, adding deionized water and trimethylolpropane, stirring for 40-60min under the condition of the rotation speed of 500-1000r/min, and then removing the acetone through vacuum distillation to obtain intermediate 2;
step S34: adding the intermediate 2, a curing agent, expandable microspheres, a catalyst, a surfactant and a defoaming agent into a reaction kettle, stirring and reacting for 10-15min at the temperature of 150-;
step S35: preheating a mould to 70-80 ℃, then adding the intermediate 3 obtained in the step S34 into the mould, standing for 2min at 80 ℃, curing for 16h at 100 ℃ after demoulding, and standing for 48-72h at room temperature after curing to obtain the polishing layer.
7. The polishing pad for fine polishing of electronic display screens as claimed in claim 6, wherein: the dosage ratio of the polyethylene glycol, the catalyst, the phthalic anhydride, the propylene glycol, the ethylene glycol and the p-hydroxyphenylethanol in the step S32 is as follows: 2 g: 0.01 g: 3.5 g: 1mL of: 1.5 mL: 1g, the catalyst is di-n-butylamine, the dosage ratio of the 2, 4-toluene diisooxolate, diethanolamine, 1, 4-butanediol, intermediate 1 and aminopropyltriethoxysilane in the step S33 is 1 g: 0.08 g: 6mL of: 4 g: 0.5g, wherein the dosage ratio of the intermediate 2, the curing agent, the expandable microspheres, the catalyst, the surfactant and the defoaming agent in the step S34 is 10 g: 0.1 g: 0.01-0.02 g: 0.05 g: 0.1 g: 0.1g, the curing agent is any one of a polyol curing agent and an alcohol amine curing agent, the catalyst is an amine catalyst, the surfactant is sodium dodecyl sulfate, and the defoaming agent is polyether modified silicone oil.
8. The polishing pad for fine polishing of electronic display screens as claimed in claim 1, wherein: the thickness of the base layer is 0.2-0.4mm, the thickness of the connecting layer is 0.06-0.08mm, and the thickness of the polishing layer is 0.35-0.45 mm.
9. The method for producing a polishing pad for fine polishing of electronic display screens according to claim 1, wherein the polishing step comprises the steps of: the polishing pad for fine polishing of the electronic display screen is prepared by the following steps:
step S1: placing the base layer in a vacuum hot-pressing laminating machine, setting the vacuum degree of the vacuum hot-pressing laminating machine to be 0.1-0.3MPa, laminating the connecting layer on the base layer at the temperature of 110-130 ℃, controlling the laminating time to be 1-3min, slowly reducing the temperature to 40 ℃ after the laminating is finished, then preserving the heat at the temperature of 40 ℃ for 20-30min, and cooling to 15-20 ℃ after the heat preservation is finished to form a first plate layer;
step S2: and (5) attaching the first laminate obtained in the step (S1) and the polishing layer by using a vacuum hot-pressing attaching machine, controlling the vacuum degree of the vacuum hot-pressing attaching machine to be 0.4-0.5MPa, the attaching temperature to be 120-140 ℃, attaching time to be 50-60S, cooling to be 15-25 ℃ after attaching is finished, cutting and cutting to obtain the polishing pad for fine polishing of the electronic display screen.
CN202110268631.1A 2021-03-12 2021-03-12 Polishing pad for fine polishing of electronic display screen and production method thereof Active CN113021159B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110268631.1A CN113021159B (en) 2021-03-12 2021-03-12 Polishing pad for fine polishing of electronic display screen and production method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110268631.1A CN113021159B (en) 2021-03-12 2021-03-12 Polishing pad for fine polishing of electronic display screen and production method thereof

Publications (2)

Publication Number Publication Date
CN113021159A true CN113021159A (en) 2021-06-25
CN113021159B CN113021159B (en) 2022-03-15

Family

ID=76470139

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110268631.1A Active CN113021159B (en) 2021-03-12 2021-03-12 Polishing pad for fine polishing of electronic display screen and production method thereof

Country Status (1)

Country Link
CN (1) CN113021159B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113878504A (en) * 2021-10-27 2022-01-04 广东伟艺精细研磨科技有限公司 Polishing and cleaning pad for display screen and preparation method thereof
CN114952643A (en) * 2022-05-25 2022-08-30 成都贝瑞光电科技股份有限公司 Manufacturing method of fixed abrasive polishing asphalt disc

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102653665A (en) * 2012-04-28 2012-09-05 成都鑫三洋科技发展有限公司 Hot melt adhesive
CN103862365A (en) * 2014-01-21 2014-06-18 湖北鼎龙化学股份有限公司 Polyurethane-material polishing pad and preparation method thereof
CN108582905A (en) * 2018-04-24 2018-09-28 安徽禾臣新材料有限公司 A kind of liquid crystal display production polishing preparation method of damping cloth
CN110977756A (en) * 2019-12-27 2020-04-10 万华化学集团股份有限公司 Polishing layer of chemical mechanical polishing pad and application thereof
CN111909485A (en) * 2019-05-10 2020-11-10 南通联鑫新材料科技有限公司 Epoxy resin composite board and preparation method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102653665A (en) * 2012-04-28 2012-09-05 成都鑫三洋科技发展有限公司 Hot melt adhesive
CN103862365A (en) * 2014-01-21 2014-06-18 湖北鼎龙化学股份有限公司 Polyurethane-material polishing pad and preparation method thereof
CN108582905A (en) * 2018-04-24 2018-09-28 安徽禾臣新材料有限公司 A kind of liquid crystal display production polishing preparation method of damping cloth
CN111909485A (en) * 2019-05-10 2020-11-10 南通联鑫新材料科技有限公司 Epoxy resin composite board and preparation method thereof
CN110977756A (en) * 2019-12-27 2020-04-10 万华化学集团股份有限公司 Polishing layer of chemical mechanical polishing pad and application thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113878504A (en) * 2021-10-27 2022-01-04 广东伟艺精细研磨科技有限公司 Polishing and cleaning pad for display screen and preparation method thereof
CN114952643A (en) * 2022-05-25 2022-08-30 成都贝瑞光电科技股份有限公司 Manufacturing method of fixed abrasive polishing asphalt disc

Also Published As

Publication number Publication date
CN113021159B (en) 2022-03-15

Similar Documents

Publication Publication Date Title
CN113021159B (en) Polishing pad for fine polishing of electronic display screen and production method thereof
US3152094A (en) Production of polyurethanes using an imidazole catalyst
CN105367731A (en) Polyurethane elastomer polishing material and preparation method therefor
CN106866933A (en) A kind of solid buoyancy material and preparation method thereof
CN111333807B (en) Phenolic-based renewable high polymer material, and preparation method and regeneration application thereof
CN110964173A (en) Polyurethane composition for honeycomb composite material, preparation method of polyurethane composition, polyurethane foam and application of polyurethane foam
JP3097890B2 (en) Polyurethane binder for grinding wheels
CN111996804B (en) Novel synthetic waterborne polyurethane grinding material and application thereof
CN116444977B (en) Polyurethane elastomer and method for preparing polishing abrasive block by using same
CN113150712A (en) Adsorption pad for electronic display screen production and preparation process thereof
CN103524695B (en) A kind of fiberglass reinforced Thermoplastic polyurethane composite material and preparation method thereof
KR102287235B1 (en) Polishing pad with controlled crosslinking and preparation method thereof
CN110951033A (en) Hydrolysis-resistant polyurethane resin and preparation method thereof
CN109796924A (en) A kind of preparation method of high temperature resistant aluminum wood composite decorating board
CN114714691A (en) Novel ceramic integrated plate and processing technology thereof
CN107353839A (en) A kind of strong double-face adhesive tape
WO2018209721A1 (en) Timber adhesive comprising isocyanate groups and application method thereof
CN110204857A (en) A kind of preparation method of the low dielectric copper-clad plate based on benzoxazine resin
US20230202000A1 (en) Method for preparing flexible sol-gel polishing block
CN115181244B (en) Preparation method of polyurethane sieve plate
KR102277418B1 (en) Polishing pad with improved crosslinking density and preparation method thereof
CN111073579A (en) High-initial-viscosity polyurethane adhesive for artificial board and preparation method and application thereof
KR102237357B1 (en) Composition for polishing pad, polishing pad and preparation method of semiconductor device
CN117601463A (en) Preparation method of polyurethane composite material
KR102237362B1 (en) Composition for polishing pad, polishing pad and preparation method of semiconductor device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant