CN113013726B - Broadband microwave signal generation device and method based on vertical cavity semiconductor laser - Google Patents
Broadband microwave signal generation device and method based on vertical cavity semiconductor laser Download PDFInfo
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- CN113013726B CN113013726B CN202110200339.6A CN202110200339A CN113013726B CN 113013726 B CN113013726 B CN 113013726B CN 202110200339 A CN202110200339 A CN 202110200339A CN 113013726 B CN113013726 B CN 113013726B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06804—Stabilisation of laser output parameters by monitoring an external parameter, e.g. temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0085—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for modulating the output, i.e. the laser beam is modulated outside the laser cavity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06808—Stabilisation of laser output parameters by monitoring the electrical laser parameters, e.g. voltage or current
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
Abstract
The invention provides a broadband microwave signal generating device and method based on a vertical cavity semiconductor laser, belonging to the technical field of microwave photonics, comprising a signal generating module, a photoelectric feedback module and a broadband microwave signal generating module, wherein the signal generating module is used for dividing a light beam signal emitted by the vertical cavity semiconductor laser into two parts, one part of the photoelectric signal enters the photoelectric feedback module, the other part of the photoelectric signal is subjected to component separation by a light splitter, and an interference signal is filtered by the photoelectric feedback module; the photoelectric feedback module is used for receiving the photoelectric signal of the signal generating module, filtering an interference signal, and feeding the photoelectric signal back to the vertical cavity surface semiconductor laser to form photoelectric feedback; and the control module is used for adjusting the bias current and the temperature of the vertical cavity surface semiconductor laser so as to obtain a microwave signal with pure signal and ultra wide band.
Description
Technical Field
The invention belongs to the technical field of microwave photonics, and particularly relates to a broadband microwave signal generating device and method based on a vertical cavity semiconductor laser.
Background
With the rapid development of the optical fiber communication technology and the microwave technology, the relationship between the two is becoming more and more compact, on one hand, the advantages of the optical fiber communication technology, such as large broadband, low energy consumption, electromagnetic interference resistance, and the like, can be used for solving some problems encountered in the generation, transmission and processing of microwave signals, and on the other hand, the microwave technology plays an important role in a transceiver module of a high-capacity optical fiber communication system.
The conventional photon production method for single-frequency microwave signals generally comprises a direct modulation method, an external modulation method and the like, wherein the direct modulation method cannot obtain high-frequency microwave signals due to the limitation of the modulation bandwidth of a laser; although the external modulation method can generate microwave signals of higher frequencies, the external modulator requires a high driving voltage and introduces larger losses compared to the direct modulation method. Accordingly, research based on the vertical cavity semiconductor laser is widely concerned by people, and the vertical cavity semiconductor laser can simultaneously output two orthogonal polarization components under appropriate bias current, so that possibility is provided for obtaining a double-path broadband microwave signal, and therefore, the research on generating a high-quality microwave signal based on the vertical cavity semiconductor laser to meet application needs in more fields has important significance and practical value.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a device and a method for generating a broadband microwave signal based on a vertical cavity semiconductor laser, so as to obtain a microwave signal with pure signal and ultra wide band.
In order to achieve the above purpose, the invention adopts the technical scheme that:
the scheme provides a broadband microwave signal generating device based on a vertical cavity semiconductor laser, which comprises a signal generating module, a photoelectric feedback module and a control module;
the signal generating module is used for dividing a light beam signal emitted by the vertical cavity surface semiconductor laser into two parts, wherein one part of the photoelectric signal enters the photoelectric feedback module, the other part of the photoelectric signal is subjected to component separation by the optical splitter, and an interference signal is filtered by the photoelectric feedback module;
the photoelectric feedback module is used for receiving the photoelectric signal of the signal generating module, filtering an interference signal, and feeding the photoelectric signal back to the vertical cavity surface semiconductor laser to form photoelectric feedback;
and the control module is used for adjusting the bias current and the temperature of the vertical cavity surface semiconductor laser.
Furthermore, the signal generation module comprises a vertical cavity semiconductor laser, an optical isolator, a first aspheric lens, a polarization controller and an optical splitter which are connected in sequence, and the optical splitter is connected with the photoelectric feedback module.
Still further, the photoelectric feedback module comprises a second aspheric lens connected with the optical splitter, an optical fiber collimator connected with the second aspheric lens, a first photoelectric coupler connected with the optical fiber collimator, a first photoelectric isolator and a second photoelectric isolator respectively connected with the first photoelectric coupler, a third photoelectric coupler connected with the first photoelectric isolator, and a first photoelectric detector connected with the third photoelectric coupler, the photoelectric isolator comprises a fourth photoelectric coupler connected with the second photoelectric isolator, a second photoelectric detector connected with the fourth photoelectric coupler, a fifth photoelectric coupler respectively connected with the first photoelectric detector and the second photoelectric detector, an electric amplifier connected with the fifth photoelectric coupler, an electric attenuator connected with the electric amplifier and a radio frequency bias connected with the electric attenuator.
Furthermore, the first photoelectric detector is connected with the third photoelectric coupler through a sensing optical fiber; and the second photoelectric detector is connected with the fourth photoelectric coupler through a conducting optical fiber.
Still further, the third photoelectric coupler, the fourth photoelectric coupler, the sensing optical fiber and the conducting optical fiber form an anti-interference structure.
Still further, the expression of the phase difference between the two optical signals in the first photodetector and the second photodetector is as follows:
ΔΦ＝ΔΦ0+ΔΦs
wherein, delta phi represents the phase difference of two signals of the first photoelectric detector and the second photoelectric detector, and delta phi0Representing the initial phase difference, Δ ΦsRepresenting the amount of phase change of the conducting fiber, l representing the length of the conducting fiber, β representing the propagation constant of the conducting fiber, r representing the radius of the core of the conducting fiber, and n representing the refractive index of the core of the conducting fiber.
Still further, the expression of the time when the first photodetector receives the photo-electric signal is as follows:
t1＝(L1+L2-R)n/c
wherein, t1Representing the time of reception of the photoelectric signal by the first photodetector, c representing the propagation of the photoelectric signal in vacuumN represents the refractive index of the core of the conducting fiber, L1And L2Respectively representing the lengths of the sensing optical fiber and the conducting optical fiber, and R represents a disturbance signal;
the expression of the time when the second photodetector receives the photoelectric signal is as follows:
t2＝Rn/c
wherein, t2Indicating the time at which the second photodetector received the photo-electric signal.
Still further, the central wavelength of the vertical cavity semiconductor laser is 850 nm; the first photoelectric detector and the second photoelectric detector are both 12GHz broadband photoelectric detectors.
Still further, the control module adopts a Labview programming control system.
Based on the system, the invention also provides a broadband microwave signal generation method based on the vertical cavity semiconductor laser, which comprises the following steps:
s1, enabling the light emitted by the vertical cavity surface semiconductor laser to enter the optical splitter through the optical isolator, the first aspheric lens and the polarization controller in sequence;
s2, separating two polarization components by using an optical splitter, sending the polarization components to a second aspheric lens through a single-mode optical fiber, and sending the polarization components to an anti-interference structure through the second aspheric lens, an optical fiber collimator and a first photoelectric coupler in sequence;
s3, filtering the interference signal by using an anti-disturbance structure, and sequentially sending the interference signal to the electric attenuator and the radio frequency biaser through the electric amplifier;
and S4, feeding back the signal to the vertical cavity surface semiconductor laser through the radio frequency bias device to form photoelectric feedback, and generating a broadband microwave signal based on the vertical cavity semiconductor laser.
The invention has the beneficial effects that:
(1) the invention firstly utilizes the control module to adjust the bias current and the temperature of the vertical cavity semiconductor laser, then utilizes the polarization controller and the optical splitter to separate the two components, and then filters the interference signals of the photoelectric signals of the two components through the photoelectric feedback module and forms the photoelectric feedback, namely converts the optical signals into microwave signals.
(2) The anti-interference structure can detect interference signals by observing the light intensity change of interference light so as to obtain purer microwave signals, and the external interference is easier to control by utilizing the photoelectric feedback module.
(3) The invention adopts the mode of combining the vertical cavity semiconductor laser and the photoelectric feedback module to generate the microwave signal, and has simple structure and easy regulation and control.
Drawings
FIG. 1 is a schematic diagram of the system of the present invention.
Fig. 2 is a schematic structural diagram of the present invention.
FIG. 3 is a flow chart of the method of the present invention.
Detailed Description
The following description of the embodiments of the present invention is provided to facilitate the understanding of the present invention by those skilled in the art, but it should be understood that the present invention is not limited to the scope of the embodiments, and it will be apparent to those skilled in the art that various changes may be made without departing from the spirit and scope of the invention as defined and defined in the appended claims, and all matters produced by the invention using the inventive concept are protected.
Example 1
As shown in fig. 1-2, the present invention provides a broadband microwave signal generating device based on a vertical cavity semiconductor laser, which is characterized in that the device comprises a signal generating module, an optoelectronic feedback module and a control module; the signal generating module is used for dividing a light beam signal emitted by the vertical cavity surface semiconductor laser into two parts, wherein one part of photoelectric signals enter the photoelectric feedback module, and the other part of photoelectric signals are subjected to component separation by the optical splitter and are subjected to interference signal filtering by the photoelectric feedback module; the photoelectric feedback module is used for receiving the photoelectric signal of the signal generating module, filtering an interference signal, and feeding the photoelectric signal back to the vertical cavity surface semiconductor laser to form photoelectric feedback; and the control module is used for adjusting the bias current and the temperature of the vertical cavity surface semiconductor laser. The signal generation module comprises a vertical cavity semiconductor laser, an optical isolator, a first aspheric lens, a polarization controller and an optical splitter which are sequentially connected, and the optical splitter is connected with the photoelectric feedback module. The photoelectric feedback module comprises a second aspheric lens connected with the optical splitter, an optical fiber collimator connected with the second aspheric lens, a first photoelectric coupler connected with the optical fiber collimator, a first photoelectric isolator and a second photoelectric isolator which are respectively connected with the first photoelectric coupler, a third photoelectric coupler connected with the first photoelectric isolator, a first photoelectric detector connected with the third photoelectric coupler, a fourth photoelectric coupler connected with the second photoelectric isolator, a second photoelectric detector connected with the fourth photoelectric coupler, a fifth photoelectric coupler connected with the first photoelectric detector and the second photoelectric detector respectively, an electric amplifier connected with the fifth photoelectric coupler, an electric attenuator connected with the electric amplifier and a radio frequency bias connected with the electric attenuator. The first photoelectric detector is connected with the third photoelectric coupler through a sensing optical fiber; and the second photoelectric detector is connected with the fourth photoelectric coupler through a conducting optical fiber. And the third photoelectric coupler, the fourth photoelectric coupler, the sensing optical fiber and the conducting optical fiber form an anti-interference structure. The central wavelength of the vertical cavity semiconductor laser is 850 nm; the first photodetector and the second photodetector are both 12GHz broadband photodetectors.
In this embodiment, the temperature and the bias current of the vertical-cavity surface semiconductor laser are controlled by the control module, the pulse state of the vertical-cavity surface semiconductor laser is controlled by adjusting the bias current, light output by the vertical-cavity surface semiconductor laser is split into two parts after the optical splitter, wherein one part is used as an output detection signal, and the other part is fed back to the vertical-cavity surface semiconductor laser through the second aspheric lens, the optical fiber collimator, the first coupler, the anti-interference structure, the fifth photocoupler, the electrical amplifier, the electrical attenuator and the radio frequency biaser, so as to form the photoelectric feedback. The photoelectric feedback intensity is adjusted through the electric amplifier and the electric attenuator, the feedback time delay is adjusted through adjusting the optical fiber line, so that the vertical cavity surface semiconductor laser works in a pulse state with locked harmonic frequency, optical signals are converted into electric signals through the first photoelectric detector and the second photoelectric detector, and the photoelectric feedback intensity of the photoelectric feedback module is adjusted through the electric attenuator.
In this embodiment, the third photocoupler, the fourth photocoupler, the sensing optical fiber and the conducting optical fiber form an anti-interference structure. Light generated by the optical splitter is divided into two beams by the first coupler, wherein one beam enters the anti-interference structure along the clockwise direction, is transmitted in the sensing optical fiber and is detected by the first photoelectric detector through the first photoelectric isolator and the third coupler, meanwhile, in the symmetry of the optical path, the other beam enters the anti-interference structure along the anticlockwise direction, is transmitted in the sensing optical fiber and is detected by the second photoelectric detector through the second photoelectric isolator and the fourth coupler, the anti-interference structure can detect an interference signal by observing the light intensity change of the interference light, the interference signal is filtered, so that a purer microwave signal is obtained, the external interference is easier to control in a signal by utilizing the photoelectric feedback module, and the polarization states of the two beams of coherent light are kept consistent.
In this embodiment, the expression of the phase difference between the two optical signals in the first photodetector and the second photodetector is as follows:
ΔΦ＝ΔΦ0+ΔΦs
wherein, delta phi represents the phase difference of two signals of the first photoelectric detector and the second photoelectric detector, and delta phi0Representing the initial phase difference, Δ ΦsRepresenting the amount of phase change of the conducting fiber, l representing the length of the conducting fiber, β representing the propagation constant of the conducting fiber, r representing the radius of the core of the conducting fiber, and n representing the refractive index of the core of the conducting fiber.
In this embodiment, the expression of the time when the first photodetector receives the photoelectric signal is as follows:
t1＝(L1+L2-R)n/c
wherein, t1Representing the time of receipt of the photoelectric signal by the first photodetector, c representing the photoelectric signal in vacuumThe velocity of medium propagation, n represents the refractive index of the core of the conducting fiber, L1And L2Respectively, the lengths of the sensing fiber and the conducting fiber, and R represents a disturbance signal.
In this embodiment, the expression of the time when the second photodetector receives the photoelectric signal is as follows:
t2＝Rn/c
wherein, t2Indicating the time at which the second photodetector received the photo-electric signal.
Example 2
As shown in fig. 3, the present invention provides a method for generating a broadband microwave signal based on a vertical cavity semiconductor laser, which is implemented as follows:
s1, enabling the light emitted by the vertical cavity surface semiconductor laser to enter the optical splitter through the optical isolator, the first aspheric lens and the polarization controller in sequence;
s2, separating two polarization components by using an optical splitter, sending the polarization components to a second aspheric lens through a single-mode optical fiber, and sending the polarization components to an anti-interference structure through the second aspheric lens, an optical fiber collimator and a first photoelectric coupler in sequence;
s3, filtering the interference signal by using an anti-disturbance structure, and sequentially sending the interference signal to the electric attenuator and the radio frequency biaser through the electric amplifier;
and S4, feeding back the signal to the vertical cavity surface semiconductor laser through the radio frequency bias device to form photoelectric feedback, and generating a broadband microwave signal based on the vertical cavity semiconductor laser.
In this embodiment, the control module is first utilized to adjust the bias current and temperature of the vertical cavity semiconductor laser, then the polarization controller and the optical splitter are utilized to separate the two components, and then the photoelectric signals of the two components are filtered by the photoelectric feedback module to remove interference signals, and form photoelectric feedback, that is, the optical signals are converted into microwave signals. The anti-interference structure can detect interference signals by observing the light intensity change of interference light so as to obtain purer microwave signals, the external disturbance is easier to control by utilizing the photoelectric feedback module, the microwave signals are generated by combining the vertical cavity semiconductor laser and the photoelectric feedback module, and the anti-interference structure is simple in structure and easy to regulate and control.
Claims (7)
1. A broadband microwave signal generating device based on a vertical cavity semiconductor laser is characterized by comprising a signal generating module, a photoelectric feedback module and a control module;
the signal generating module is used for dividing a light beam signal emitted by the vertical cavity surface semiconductor laser into two parts, wherein one part of the photoelectric signal enters the photoelectric feedback module, the other part of the photoelectric signal is subjected to component separation by the optical splitter, and an interference signal is filtered by the photoelectric feedback module;
the photoelectric feedback module is used for receiving the photoelectric signal of the signal generating module, filtering an interference signal, and feeding the photoelectric signal back to the vertical cavity surface semiconductor laser to form photoelectric feedback;
the control module is used for adjusting the bias current and the temperature of the vertical cavity surface semiconductor laser;
the signal generation module comprises a vertical cavity semiconductor laser, an optical isolator, a first aspheric lens, a polarization controller and an optical splitter which are sequentially connected, and the optical splitter is connected with the photoelectric feedback module;
the photoelectric feedback module comprises a second aspheric lens connected with the optical splitter, an optical fiber collimator connected with the second aspheric lens, a first photoelectric coupler connected with the optical fiber collimator, a first photoelectric isolator and a second photoelectric isolator which are respectively connected with the first photoelectric coupler, a third photoelectric coupler connected with the first photoelectric isolator, a first photoelectric detector connected with the third photoelectric coupler, a fourth photoelectric coupler connected with the second photoelectric isolator, a second photoelectric detector connected with the fourth photoelectric coupler, a fifth photoelectric coupler connected with the first photoelectric detector and the second photoelectric detector respectively, an electric amplifier connected with the fifth photoelectric coupler, an electric attenuator connected with the electric amplifier and a radio frequency bias connected with the electric attenuator;
the expression of the phase difference of the two optical signals in the first photodetector and the second photodetector is as follows:
ΔΦ＝ΔΦ0+ΔΦs
wherein, delta phi represents the phase difference of two signals of the first photoelectric detector and the second photoelectric detector, and delta phi0Representing the initial phase difference, Δ ΦsRepresenting the amount of phase change of the conducting fiber, l representing the length of the conducting fiber, β representing the propagation constant of the conducting fiber, r representing the radius of the core of the conducting fiber, and n representing the refractive index of the core of the conducting fiber.
2. The broadband microwave signal generating device based on the vertical cavity semiconductor laser as claimed in claim 1, wherein the first photo-detector is connected with the third photo-coupler through a sensing optical fiber; and the second photoelectric detector is connected with the fourth photoelectric coupler through a conducting optical fiber.
3. The vertical cavity semiconductor laser based broadband microwave signal generating device according to claim 2, wherein the third photo coupler, the fourth photo coupler, the sensing fiber and the conducting fiber constitute an anti-interference structure.
4. A broadband vertical cavity semiconductor laser based microwave signal generating device according to claim 3, wherein the expression of the time when the first photodetector receives the photo-electric signal is as follows:
t1＝(L1+L2-R)n/c
wherein, t1Representing the time of receiving the photoelectric signal by the first photodetector, c representing the speed of propagation of the photoelectric signal in vacuum, n representing the refractive index of the core of the conducting fiber, L1And L2Respectively representing the lengths of the sensing optical fiber and the conducting optical fiber, and R represents a disturbance signal;
the expression of the time when the second photodetector receives the photoelectric signal is as follows:
t2＝Rn/c
wherein, t2Indicating the time at which the second photodetector received the photo-electric signal.
5. The broad band microwave signal generating apparatus based on a vertical cavity semiconductor laser as claimed in claim 4 wherein the center wavelength of the vertical cavity semiconductor laser is 850 nm; the first photoelectric detector and the second photoelectric detector are both 12GHz broadband photoelectric detectors.
6. The vertical cavity semiconductor laser-based broadband microwave signal generating device according to claim 5, wherein the control module adopts a Labview programming control system.
7. A method for generating a broadband microwave signal of a vertical cavity semiconductor laser based broadband microwave signal generating device according to claims 1-6, comprising the steps of:
s1, enabling the light emitted by the vertical cavity surface semiconductor laser to enter the optical splitter through the optical isolator, the first aspheric lens and the polarization controller in sequence;
s2, separating two polarization components by using an optical splitter, sending the polarization components to a second aspheric lens through a single-mode optical fiber, and sending the polarization components to an anti-interference structure through the second aspheric lens, an optical fiber collimator and a first photoelectric coupler in sequence;
s3, filtering the interference signal by using an anti-disturbance structure, and sequentially sending the interference signal to the electric attenuator and the radio frequency biaser through the electric amplifier;
and S4, feeding back the signal to the vertical cavity surface semiconductor laser through the radio frequency bias device to form photoelectric feedback, and generating a broadband microwave signal based on the vertical cavity semiconductor laser.
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