CN113008369B - Spinning terahertz generation device - Google Patents
Spinning terahertz generation device Download PDFInfo
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- CN113008369B CN113008369B CN202110214261.3A CN202110214261A CN113008369B CN 113008369 B CN113008369 B CN 113008369B CN 202110214261 A CN202110214261 A CN 202110214261A CN 113008369 B CN113008369 B CN 113008369B
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- terahertz
- femtosecond laser
- spinning
- photoconductive antenna
- delay line
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- 238000009987 spinning Methods 0.000 title claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 24
- 230000003287 optical effect Effects 0.000 claims abstract description 18
- 238000001514 detection method Methods 0.000 claims abstract description 10
- 230000005855 radiation Effects 0.000 claims abstract description 5
- 230000001276 controlling effect Effects 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 abstract description 5
- 239000013307 optical fiber Substances 0.000 abstract description 2
- 238000004891 communication Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000009659 non-destructive testing Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/2803—Investigating the spectrum using photoelectric array detector
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Abstract
The invention discloses a spinning terahertz generation device, which comprises a femtosecond laser, an optical switch, a spinning terahertz transmitter, a silicon chip, a delay line, an off-axis parabolic mirror, a photoconductive antenna, an attenuator and an ultrafast reflector, wherein the femtosecond laser is used for generating a laser beam; the femtosecond laser output by the femtosecond laser is modulated by an optical switch and then irradiates the spinning terahertz emitter to generate terahertz radiation; the femtosecond laser penetrating through the spinning terahertz transmitter is reflected by a silicon wafer and is called terahertz detection light, and the terahertz detection light sequentially passes through the optical fiber delay line, the ultrafast reflector and the attenuator and then irradiates the photoconductive antenna; after the generated terahertz penetrates through the silicon wafer, the terahertz is irradiated on the photoconductive antenna through the off-axis parabolic mirror and then detected by the photoconductive antenna. According to the spinning terahertz generation device, the generated terahertz is detected by the femtosecond laser penetrating through the spinning terahertz transmitter, the femtosecond laser energy is completely acted on the spinning terahertz transmitter, and the energy utilization rate is greatly improved.
Description
Technical Field
The invention relates to the technical field of spinning terahertz emission equipment, in particular to a spinning terahertz generation device.
Background
The terahertz frequency band is located between infrared and microwave, is a transition frequency band of macroscopic electronics and microscopic photonics, has various advantages of broadband property, low energy, high permeability, uniqueness and the like, and has great scientific value and wide application prospect in the fields of nondestructive testing, satellite communication, medical diagnosis, satellite communication and the like. The spinning terahertz source has the advantages of low cost, high efficiency and the like due to the unique terahertz generation mechanism, and is an important development direction of the future terahertz technology.
In a spinning terahertz system in the prior art, a beam splitter is required to divide femtosecond laser into two beams, the utilization rate of the femtosecond laser is low, and the generated terahertz is weak.
Disclosure of Invention
The spin terahertz generation device provided by the invention can solve the technical defects in the background technology.
In order to realize the purpose, the invention adopts the following technical scheme:
a spin terahertz generation device comprises a femtosecond laser, an optical switch, a spin terahertz transmitter, a silicon wafer, a delay line, an off-axis parabolic mirror, a photoconductive antenna, an attenuator and an ultrafast mirror;
the femtosecond laser output by the femtosecond laser is modulated by the optical switch and then irradiates the spinning terahertz transmitter to generate terahertz radiation;
the femtosecond laser penetrating through the spinning terahertz transmitter is reflected by a silicon wafer and is called terahertz detection light, and the terahertz detection light sequentially passes through the optical fiber delay line, the ultrafast reflector and the attenuator and then irradiates the photoconductive antenna; after the generated terahertz penetrates through the silicon wafer, the terahertz is detected by the photoconductive antenna when the terahertz irradiates the photoconductive antenna through the off-axis parabolic mirror.
Furthermore, the whole waveform detection of the terahertz waves is realized by regulating and controlling the relative length of the delay line.
Furthermore, the delay line is in a half stroke, the optical path of the terahertz transmitted through the silicon wafer and reaching the photoconductive antenna through the off-axis parabolic mirror is equal to the optical path of the femtosecond laser reflected by the silicon wafer and reaching the other side of the photoconductive antenna through the delay line, the ultrafast mirror and the attenuator.
According to the technical scheme, the spin terahertz generation device provided by the invention detects the generated terahertz by the femtosecond laser penetrating through the spin terahertz transmitter, the femtosecond laser energy is completely acted on the spin terahertz transmitter, and the energy utilization rate is greatly improved.
Drawings
FIG. 1 is an overall block diagram of the present invention;
in the figure: 101 a femtosecond laser; 102 an optical switch; 103 a spin terahertz transmitter; 104 a silicon wafer; 105 a delay line; 106 off-axis parabolic mirror; 107 a photoconductive antenna; 108 an attenuator; 109 ultrafast mirror.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all embodiments of the present invention.
As shown in fig. 1, the spin terahertz generation apparatus according to the present embodiment includes a femtosecond laser 101, an optical switch 102, a spin terahertz transmitter 103, a silicon wafer 104, a delay line 105, an off-axis parabolic mirror 106, a photoconductive antenna 107, an attenuator 108, and an ultrafast mirror 109.
The femtosecond laser output by the femtosecond laser 101 is modulated by the optical switch 102 and then irradiated onto the spin terahertz transmitter 103 to generate terahertz radiation.
The femtosecond laser transmitted through the spin terahertz transmitter is reflected by the silicon wafer 104, called as probe light, and irradiates the photoconductive antenna 107 after passing through the fiber delay line 105, the ultrafast mirror 109 and the attenuator 108. After the generated terahertz is transmitted through the silicon wafer 104, the terahertz is irradiated onto the photoconductive antenna 107 through the off-axis parabolic mirror 106, and then is detected by the photoconductive antenna 107.
When the delay line 105 is in a half stroke, the optical path of the terahertz transmitted through the silicon wafer 104 and reaching the photoconductive antenna 107 through the off-axis parabolic mirror is equal to the optical path of the femtosecond laser reflected by the silicon wafer 104 and reaching the other side of the photoconductive antenna 107 through the delay line 105, the ultrafast mirror 109 and the attenuator 108. The whole waveform detection of the terahertz waves is realized by regulating and controlling the relative length of the delay line 105.
As can be seen from the above, the spin terahertz generation device described in this embodiment modulates the optical switch 102 by an external excitation source, so as to realize transmission and interception of the femtosecond laser. When the femtosecond laser irradiates the spin terahertz transmitter 103, terahertz radiation can be generated, and part of the femtosecond laser directly penetrates through the spin terahertz transmitter;
the silicon wafer 104 can transmit terahertz and reflect femtosecond laser. The terahertz transmitted through the silicon chip 104 is shaped and transmitted by the off-axis parabolic mirror 106 and then irradiates the photoconductive antenna 107. The femtosecond laser reflected by the silicon chip 104 is terahertz detection light, which reaches the other side of the photoconductive antenna 107 through the delay line 105, the ultrafast mirror 109 and the attenuator 108.
When the delay line 105 is in a half stroke, the optical path of the terahertz transmitted by the silicon wafer 104 and reaching the photoconductive antenna 107 through the off-axis parabolic mirror is equal to the optical path of the femtosecond laser reflected by the silicon wafer 104 and reaching the other side of the photoconductive antenna 107 through the delay line 105, the ultrafast mirror 109 and the attenuator 108.
According to the spinning terahertz generation device, the generated terahertz is detected by the femtosecond laser penetrating through the spinning terahertz transmitter, the femtosecond laser energy is completely acted on the spinning terahertz transmitter, and the energy utilization rate is greatly improved.
The above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (3)
1. A spin terahertz generation device is characterized by comprising a femtosecond laser (101), an optical switch (102), a spin terahertz transmitter (103), a silicon wafer (104), a delay line (105), an off-axis parabolic mirror (106), a photoconductive antenna (107), an attenuator (108) and an ultrafast mirror (109);
the femtosecond laser output by the femtosecond laser (101) is modulated by the optical switch (102) and then irradiates the spinning terahertz transmitter (103) to generate terahertz radiation;
the femtosecond laser transmitted by the spinning terahertz transmitter (103) is reflected by a silicon wafer (104) and is called terahertz detection light, the terahertz detection light sequentially passes through a delay line (105), an ultrafast mirror (109) and an attenuator (108) and then irradiates a photoconductive antenna (107), and the generated terahertz is transmitted by the silicon wafer (104) and then is detected by the photoconductive antenna (107) when irradiating the photoconductive antenna (107) through an off-axis parabolic mirror (106).
2. The spin terahertz generation device of claim 1, wherein: the whole waveform detection of the terahertz waves is realized by regulating and controlling the relative length of the delay line (105).
3. The spin terahertz generation device of claim 2, wherein: the delay line (105) is in a half stroke, the optical path of the terahertz transmitted by the silicon chip (104) and reaching the photoconductive antenna (107) through the off-axis parabolic mirror is equal to the optical path of the femtosecond laser reflected by the silicon chip (104) and reaching the other surface of the photoconductive antenna (107) through the delay line (105), the ultrafast mirror (109) and the attenuator (108).
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| CN202110214261.3A CN113008369B (en) | 2021-02-26 | 2021-02-26 | Spinning terahertz generation device |
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| CN202110214261.3A CN113008369B (en) | 2021-02-26 | 2021-02-26 | Spinning terahertz generation device |
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| CN113008369B true CN113008369B (en) | 2022-10-04 |
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| CN113612102B (en) * | 2021-07-30 | 2023-06-23 | 北京航空航天大学合肥创新研究院(北京航空航天大学合肥研究生院) | Spin terahertz generating device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111916976A (en) * | 2020-08-10 | 2020-11-10 | 北京航空航天大学 | Spin-emission-based ultra-wideband polarization tunable terahertz radiation source |
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| CN101813619B (en) * | 2010-04-16 | 2011-08-17 | 首都师范大学 | Method utilizing polarization-controllable T-Hz wave to measure optical axis direction of birefringent crystal |
| EP2679984A1 (en) * | 2012-06-29 | 2014-01-01 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method and arrangement for carrying out time-domain measurements |
| JP2017067613A (en) * | 2015-09-30 | 2017-04-06 | 株式会社Ｓｃｒｅｅｎホールディングス | Inspection device and inspection method |
| CN208635921U (en) * | 2018-06-05 | 2019-03-22 | 北京航空航天大学 | High field Terahertz spin transmitter and spectrometer |
| CN111697415B (en) * | 2020-06-04 | 2022-11-01 | 上海理工大学 | Terahertz enhancement method based on Weyl semimetal-nano mesoporous composite structure |
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| CN111916976A (en) * | 2020-08-10 | 2020-11-10 | 北京航空航天大学 | Spin-emission-based ultra-wideband polarization tunable terahertz radiation source |
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| 自旋电子太赫兹源研究进展;许涌 等;《物理学报》;20201231;全文 * |
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