CN113003936A - Chalcogenide composite glass powder and preparation method and application thereof - Google Patents
Chalcogenide composite glass powder and preparation method and application thereof Download PDFInfo
- Publication number
- CN113003936A CN113003936A CN202110442412.0A CN202110442412A CN113003936A CN 113003936 A CN113003936 A CN 113003936A CN 202110442412 A CN202110442412 A CN 202110442412A CN 113003936 A CN113003936 A CN 113003936A
- Authority
- CN
- China
- Prior art keywords
- parts
- telluride
- crucible
- glass powder
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000843 powder Substances 0.000 title claims abstract description 41
- 239000011521 glass Substances 0.000 title claims abstract description 35
- 239000002131 composite material Substances 0.000 title claims abstract description 22
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 150000004770 chalcogenides Chemical class 0.000 title claims abstract description 19
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims abstract description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 16
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims abstract description 16
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 16
- 150000004771 selenides Chemical class 0.000 claims abstract description 16
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 16
- 239000011593 sulfur Substances 0.000 claims abstract description 16
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052709 silver Inorganic materials 0.000 claims abstract description 12
- 239000004332 silver Substances 0.000 claims abstract description 12
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 claims abstract description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 8
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000005751 Copper oxide Substances 0.000 claims abstract description 8
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 8
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 8
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052796 boron Inorganic materials 0.000 claims abstract description 8
- 229910000431 copper oxide Inorganic materials 0.000 claims abstract description 8
- 238000002844 melting Methods 0.000 claims abstract description 8
- 230000008018 melting Effects 0.000 claims abstract description 8
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 8
- 239000011669 selenium Substances 0.000 claims abstract description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 8
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 8
- UCMJLSDIXYLIDJ-UHFFFAOYSA-N tellanylidenebarium Chemical compound [Ba]=[Te] UCMJLSDIXYLIDJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- ZTBJFXYWWZPTFM-UHFFFAOYSA-N tellanylidenemagnesium Chemical compound [Te]=[Mg] ZTBJFXYWWZPTFM-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000011787 zinc oxide Substances 0.000 claims abstract description 8
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 8
- 239000002994 raw material Substances 0.000 claims abstract description 6
- 238000000227 grinding Methods 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 16
- 238000001816 cooling Methods 0.000 claims description 15
- 238000002156 mixing Methods 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- 238000007789 sealing Methods 0.000 claims description 14
- 238000005303 weighing Methods 0.000 claims description 11
- 238000010791 quenching Methods 0.000 claims description 10
- 230000000171 quenching effect Effects 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 238000005245 sintering Methods 0.000 claims description 7
- 238000010304 firing Methods 0.000 claims description 6
- 238000003801 milling Methods 0.000 claims description 5
- 239000002114 nanocomposite Substances 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 238000001694 spray drying Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract description 4
- 239000002253 acid Substances 0.000 abstract description 3
- 238000005260 corrosion Methods 0.000 abstract description 2
- 230000007797 corrosion Effects 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000010248 power generation Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000006060 molten glass Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- -1 silver aluminum Chemical compound 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/32—Non-oxide glass compositions, e.g. binary or ternary halides, sulfides or nitrides of germanium, selenium or tellurium
- C03C3/321—Chalcogenide glasses, e.g. containing S, Se, Te
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C12/00—Powdered glass; Bead compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Geochemistry & Mineralogy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Glass Compositions (AREA)
Abstract
The invention discloses chalcogenide composite glass powder and a preparation method and application thereof, wherein the chalcogenide composite glass powder comprises the following raw materials in parts by weight: 10-20 parts of sulfur, 10-30 parts of sulfide, 20-40 parts of selenide and 50-75 parts of telluride; the sulfide is prepared from sulfur, copper oxide and zinc oxide =1:2:3 by weight ratio; the selenide is prepared according to the weight ratio of selenium to zirconium =1 to 2; the telluride is prepared from 20-50 parts of bismuth telluride, 3-5 parts of zinc telluride, 4-8 parts of barium telluride, 10-25 parts of boron telluride, 1-2 parts of magnesium telluride, 1-1.5 parts of aluminum telluride and 1-3 parts of silicon dioxide. The chalcogenide composite glass powder has low melting and softening temperatures, can resist acid media and even resist corrosion of hydrofluoric acid, and can bond aluminum and silver on a crystal silicon wafer by adding 0.2 percent of the chalcogenide composite glass powder into aluminum paste and silver paste of a solar cell according to the weight ratio without taking up an aluminum bag, wherein the silver bag is well matched with the crystal silicon wafer, and the chalcogenide composite glass powder is an optimal product of an aluminum and silver paste inorganic bonding phase for the solar cell.
Description
Technical Field
The invention belongs to the technical field of glass powder, and particularly relates to chalcogenide composite glass powder and a preparation method and application thereof.
Background
Photovoltaic power generation is a technology of directly converting light energy into electric energy by using the photovoltaic effect of a semiconductor interface. The solar energy power generation system mainly comprises a solar panel, a controller and an inverter, and the main components of the system are electronic components. The solar cells are connected in series and then are packaged and protected to form a large-area solar cell module, and then the photovoltaic power generation device is formed by matching with components such as a power controller and the like.
Photovoltaic devices are widely used to convert solar energy into electrical energy to operate electronic devices such as computers, heating devices, and computers. The most common photovoltaic element is a silicon-based solar cell.
The silicon-based solar cell is a solar cell manufactured by using a crystalline silicon substrate of a monocrystalline silicon ingot or a polycrystalline silicon ingot. Forming electrodes on the silicon-based solar cell, firstly coating metal slurry on the front surface and the back surface of the silicon-based solar cell by screen printing, and executing two sintering procedures of low temperature and high temperature to form the metal electrodes with good ohmic contact. A typical silicon-based solar cell is coated with a conductive silver paste on its front surface and a conductive aluminum paste and a conductive silver paste (or conductive silver aluminum paste) on its back surface. Wherein the silver paste used comprises at least one or more glass frits. And adding glass powder, wherein the molten glass powder erodes the silicon substrate in the sintering process, and the metal silver and the metal aluminum are firmly compounded and immersed on the silicon substrate to obtain the solar cell panel. The performance indexes of the existing glass powder are not environment-friendly or the firing system of the silicon substrate of the solar cell can not be executed.
The sealing material is diversified in the fields of electronics and electric appliance sealing, particularly laser, aerospace and aviation automobile manufacturing, diode components and the like, has complicated shapes and has higher and higher requirements on sealing technology. In the field of electronic packaging, when the low-temperature sealing technology is applied to the transitional sealing technology, the most critical is the preparation process of the composite glass column, which comprises the preparation of low-temperature glass powder and the preparation of the composite glass column. The invention relates to a formula proportion and a processing mode method of chalcogenide composite glass powder, and performance indexes of the glass powder obtained by processing are not reported.
Disclosure of Invention
The invention aims to provide the sulfur-series composite glass powder which is non-toxic, environment-friendly, low in melting and softening temperature and acid-resistant.
The invention relates to chalcogenide composite glass powder which comprises the following raw materials in parts by weight:
10-20 parts of sulfur, 10-30 parts of sulfide, 20-40 parts of selenide and 50-75 parts of telluride;
the sulfide is prepared from sulfur, copper oxide and zinc oxide =1:2:3 by weight ratio;
the selenide is prepared according to the weight ratio of selenium to zirconium =1 to 2;
the telluride is prepared from 20-50 parts of bismuth telluride, 3-5 parts of zinc telluride, 4-8 parts of barium telluride, 10-25 parts of boron telluride, 1-2 parts of magnesium telluride, 1-1.5 parts of aluminum telluride and 1-3 parts of silicon dioxide.
The invention relates to a preparation method of chalcogenide composite glass powder, which comprises the following steps:
(1) preparing sulfide: uniformly mixing sulfur, copper oxide and zinc oxide in a weight ratio of =1:2:3, sintering at the temperature of 420 ℃ for 28-32 minutes, taking out, naturally cooling, and grinding to powder of 1300 meshes of 1200-;
(2) preparation of selenide: weighing two components according to the weight ratio of selenium to zirconium =1 to 2, placing the two components into an aluminum oxide crucible, placing the crucible into a silicon glass tube, sealing the crucible in vacuum, heating the crucible at 480 ℃ and 520 ℃ for 23 to 25 hours, heating the crucible at 780 ℃ and 820 ℃ for 46 to 50 hours, taking out the crucible, grinding the crucible into 400 meshes, placing the crucible into a silicon tube for sealing, heating the crucible at 780 ℃ and 820 ℃ for 46 to 50 hours, quenching the crucible with water, and grinding the crucible with airflow into powder of 1200 meshes and 1300 meshes;
(3) preparation of telluride: taking 20-50 parts of bismuth telluride, 3-5 parts of zinc telluride, 4-8 parts of barium telluride, 10-25 parts of boron telluride, 1-2 parts of magnesium telluride, 1-1.5 parts of aluminum telluride and 1-3 parts of silicon dioxide according to parts by weight, uniformly mixing, melting at 1250 ℃ of 1150-plus materials, naturally cooling, and milling by air flow to obtain powder of 1200-plus-1300 meshes;
(4) mixing 10-20 parts of sulfur, 10-30 parts of sulfide, 20-40 parts of selenide and 50-75 parts of telluride uniformly, firing at the temperature of 280-320 ℃ for 28-32 minutes to be in a molten state, taking out, quenching with water at normal temperature, cooling, grinding with water to be 5-8 microns in particle size, and spray drying at the temperature of 100 ℃ to obtain the nano-composite material.
The chalcogenide composite glass powder is mainly used for an inorganic bonding phase of a silver paste of a solar cell.
Compared with the prior art, the invention has obvious beneficial effects, and the scheme shows that the chalcogenide composite glass powder has the glass transition temperature of 150-300 ℃, the transition temperature of 135 +/-3 ℃, the softening temperature of 157 +/-3 ℃ and the average linear expansion coefficient of 25 +/-3 multiplied by 10 < -7 >/DEG C at the temperature of 20-300 ℃. The melting and softening temperature is low, the glass can resist acid media, even the corrosion of hydrofluoric acid, and the chalcogenide composite glass powder of the invention is added into the aluminum paste and the silver paste of the solar cell by 0.2 percent by weight, so that the aluminum and the silver can be bonded on the crystal silicon wafer, the aluminum package is not needed, the matching performance of the silver package and the crystal silicon wafer is good, and the glass is the best product of the inorganic bonding phase of the aluminum and the silver paste for the solar cell.
Detailed Description
Example 1
A preparation method of chalcogenide composite glass powder comprises the following steps:
(1) preparing sulfide: weighing raw materials according to the weight ratio of sulfur to copper oxide to zinc oxide =1:2:3, uniformly mixing, sintering at 380 ℃ for 32 minutes, taking out, naturally cooling, and grinding to 1200-mesh powder;
(2) preparation of selenide: weighing two components according to the weight ratio of selenium to zirconium =1 to 2, putting the two components into an aluminum oxide crucible, putting the crucible into a silicon glass tube, sealing the crucible in vacuum, heating the crucible at 520 ℃ for 23 hours, heating the crucible at 820 ℃ for 46 hours, taking the crucible out, grinding the crucible into 400 meshes, putting the crucible into a silicon tube, sealing the crucible, heating the crucible at 820 ℃ for 46 hours, quenching the crucible with water, and grinding the crucible with air flow into 1200 meshes of powder;
(3) preparation of telluride: weighing 20 kg of bismuth telluride, 5 kg of zinc telluride, 4 kg of barium telluride, 25 kg of boron telluride, 1 kg of magnesium telluride, 1.5 kg of aluminum telluride and 1 kg of silicon dioxide, uniformly mixing, melting at 1250 ℃, naturally cooling, and milling by an air flow mill to form 1200-mesh powder;
(4) mixing 20 kg of sulfur, 10 kg of sulfide, 40 kg of selenide and 50 kg of telluride, firing at 320 ℃ for 28 minutes to be in a molten state, taking out, quenching with water at normal temperature, cooling, grinding by using a water mill to obtain particles with the particle size of 5-8 microns, and spray drying at 100 ℃ to obtain the nano-composite material.
Example 2
A preparation method of chalcogenide composite glass powder comprises the following steps:
(1) preparing sulfide: weighing raw materials according to the weight ratio of sulfur to copper oxide to zinc oxide =1:2:3, uniformly mixing, sintering at 400 ℃ for 30 minutes, taking out, naturally cooling, and grinding to 1250-mesh powder;
(2) preparation of selenide: weighing two components according to the weight ratio of selenium to zirconium =1 to 2, putting the two components into an aluminum oxide crucible, putting the crucible into a silicon glass tube, sealing the crucible in vacuum, heating the crucible for 24 hours at 500 ℃, heating the crucible for 800 ℃ and keeping the temperature for 48 hours, taking the crucible out, grinding the crucible into 400 meshes, putting the crucible into a silicon tube, sealing the crucible, heating the crucible for 48 hours at 800 ℃, quenching the crucible with water, and grinding the crucible into 1250-mesh powder by an air mill;
(3) preparation of telluride: weighing 35 kg of bismuth telluride, 4 kg of zinc telluride, 6 kg of barium telluride, 17.5 kg of boron telluride, 1.5 kg of magnesium telluride, 1.25 kg of aluminum telluride and 2 kg of silicon dioxide, uniformly mixing, melting at 1200 ℃, naturally cooling, and milling by an air mill to form 1250-mesh powder;
(4) mixing 15 kg of sulfur, 20 kg of sulfide, 30 kg of selenide and 62.5 kg of telluride, firing for 30 minutes at 300 ℃ to be in a molten state, taking out, quenching with water at normal temperature, cooling, grinding by a water mill to obtain particles with the particle size of 5-8 microns, and spray drying at 100 ℃ to obtain the nano-composite material.
Example 3
A preparation method of chalcogenide composite glass powder comprises the following steps:
(1) preparing sulfide: weighing raw materials according to the weight ratio of sulfur to copper oxide to zinc oxide =1:2:3, uniformly mixing, sintering at 420 ℃ for 28 minutes, taking out, naturally cooling, and grinding to 1300-mesh powder;
(2) preparation of selenide: weighing two components according to the weight ratio of selenium to zirconium =1 to 2, putting the two components into an aluminum oxide crucible, putting the crucible into a silicon glass tube, sealing the crucible in vacuum, heating the crucible at 480 ℃ for 25 hours, heating the crucible at 780 ℃ for 50 hours, taking the crucible out, grinding the crucible into 400 meshes, putting the crucible into a silicon tube, sealing the crucible, heating the crucible at 780 ℃ for 50 hours, quenching the crucible with water, and grinding the crucible with an air mill into 1300 meshes of powder;
(3) preparation of telluride: weighing 50 kg of bismuth telluride, 3 kg of zinc telluride, 8 kg of barium telluride, 10 kg of boron telluride, 2 kg of magnesium telluride, 1 kg of aluminum telluride and 3 kg of silicon dioxide, uniformly mixing, melting at 1150 ℃, naturally cooling, and milling by an air flow mill to obtain 1300-mesh powder;
(4) mixing 10 kg of sulfur, 30 kg of sulfide, 20 kg of selenide and 75 kg of telluride, firing at 280 ℃ for 32 minutes to be in a molten state, taking out, quenching with water at normal temperature, cooling, grinding by adopting a water mill to obtain particles with the particle size of 5-8 microns, and spray drying at the temperature of 100 ℃ to obtain the nano-composite material.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way, and any simple modification, equivalent change and modification made to the above embodiment according to the technical spirit of the present invention are within the scope of the present invention without departing from the technical spirit of the present invention.
Claims (3)
1. The chalcogenide composite glass powder comprises the following raw materials in parts by weight:
10-20 parts of sulfur, 10-30 parts of sulfide, 20-40 parts of selenide and 50-75 parts of telluride;
the sulfide is prepared from sulfur, copper oxide and zinc oxide =1:2:3 by weight ratio;
the selenide is prepared according to the weight ratio of selenium to zirconium =1 to 2;
the telluride is prepared from 20-50 parts of bismuth telluride, 3-5 parts of zinc telluride, 4-8 parts of barium telluride, 10-25 parts of boron telluride, 1-2 parts of magnesium telluride, 1-1.5 parts of aluminum telluride and 1-3 parts of silicon dioxide.
2. The method of claim 1, comprising the steps of:
(1) preparing sulfide: uniformly mixing sulfur, copper oxide and zinc oxide in a weight ratio of =1:2:3, sintering at the temperature of 420 ℃ for 28-32 minutes, taking out, naturally cooling, and grinding to powder of 1300 meshes of 1200-;
(2) preparation of selenide: weighing two components according to the weight ratio of selenium to zirconium =1 to 2, placing the two components into an aluminum oxide crucible, placing the crucible into a silicon glass tube, sealing the crucible in vacuum, heating the crucible at 480 ℃ and 520 ℃ for 23 to 25 hours, heating the crucible at 780 ℃ and 820 ℃ for 46 to 50 hours, taking out the crucible, grinding the crucible into 400 meshes, placing the crucible into a silicon tube for sealing, heating the crucible at 780 ℃ and 820 ℃ for 46 to 50 hours, quenching the crucible with water, and grinding the crucible with airflow into powder of 1200 meshes and 1300 meshes;
(3) preparation of telluride: taking 20-50 parts of bismuth telluride, 3-5 parts of zinc telluride, 4-8 parts of barium telluride, 10-25 parts of boron telluride, 1-2 parts of magnesium telluride, 1-1.5 parts of aluminum telluride and 1-3 parts of silicon dioxide according to parts by weight, uniformly mixing, melting at 1250 ℃ of 1150-plus materials, naturally cooling, and milling by air flow to obtain powder of 1200-plus-1300 meshes;
(4) mixing 10-20 parts of sulfur, 10-30 parts of sulfide, 20-40 parts of selenide and 50-75 parts of telluride uniformly, firing at the temperature of 280-320 ℃ for 28-32 minutes to be in a molten state, taking out, quenching with water at normal temperature, cooling, grinding with water to be 5-8 microns in particle size, and spray drying at the temperature of 100 ℃ to obtain the nano-composite material.
3. The chalcogenide composite glass powder according to claim 1, which is used for an inorganic bonding phase of a silver paste of a solar cell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110442412.0A CN113003936A (en) | 2021-04-23 | 2021-04-23 | Chalcogenide composite glass powder and preparation method and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110442412.0A CN113003936A (en) | 2021-04-23 | 2021-04-23 | Chalcogenide composite glass powder and preparation method and application thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113003936A true CN113003936A (en) | 2021-06-22 |
Family
ID=76389316
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110442412.0A Pending CN113003936A (en) | 2021-04-23 | 2021-04-23 | Chalcogenide composite glass powder and preparation method and application thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113003936A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102674696A (en) * | 2011-03-17 | 2012-09-19 | 比亚迪股份有限公司 | Glass powder, preparation method of glass powder, conductive silver slurry and preparation method of conductive silver slurry |
| CN106024095A (en) * | 2016-05-25 | 2016-10-12 | 苏州晶银新材料股份有限公司 | Anaerobic glass conductive paste of solar cell |
| CN106961751A (en) * | 2015-12-09 | 2017-07-18 | 三星电子株式会社 | Heating element heater including nano material filler, its manufacture method and the equipment including it |
| CN109074896A (en) * | 2016-01-20 | 2018-12-21 | 庄信万丰股份有限公司 | Conductive paste, method, electrode and solar battery |
| US20190080815A1 (en) * | 2016-03-18 | 2019-03-14 | Dowa Electronics Materials Co., Ltd. | Silver-Tellurium-Coated Glass Powder, Production Method for Silver-Tellurium-Coated Glass Powder, Conductive Paste, and Production Method for Conductive Paste |
| CN111243777A (en) * | 2020-03-03 | 2020-06-05 | 深圳市利红金科技有限公司 | Composite conductive powder and preparation method thereof |
-
2021
- 2021-04-23 CN CN202110442412.0A patent/CN113003936A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102674696A (en) * | 2011-03-17 | 2012-09-19 | 比亚迪股份有限公司 | Glass powder, preparation method of glass powder, conductive silver slurry and preparation method of conductive silver slurry |
| CN106961751A (en) * | 2015-12-09 | 2017-07-18 | 三星电子株式会社 | Heating element heater including nano material filler, its manufacture method and the equipment including it |
| CN109074896A (en) * | 2016-01-20 | 2018-12-21 | 庄信万丰股份有限公司 | Conductive paste, method, electrode and solar battery |
| US20190080815A1 (en) * | 2016-03-18 | 2019-03-14 | Dowa Electronics Materials Co., Ltd. | Silver-Tellurium-Coated Glass Powder, Production Method for Silver-Tellurium-Coated Glass Powder, Conductive Paste, and Production Method for Conductive Paste |
| CN106024095A (en) * | 2016-05-25 | 2016-10-12 | 苏州晶银新材料股份有限公司 | Anaerobic glass conductive paste of solar cell |
| CN111243777A (en) * | 2020-03-03 | 2020-06-05 | 深圳市利红金科技有限公司 | Composite conductive powder and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7935279B2 (en) | Glass frits | |
| US9540274B2 (en) | Low-melting lead-free bismuth sealing glasses | |
| WO2009032429A1 (en) | Thick film pastes for fire through applications in solar cells | |
| WO2007111722A2 (en) | Aluminum - boron solar cell contacts | |
| EP2418656B1 (en) | Aluminium paste and solar cell using the same | |
| WO2009009512A1 (en) | Solar cell contacts containing aluminum and at least one of boron, titanium, nickel, tin, silver, gallium, zinc, indium and copper | |
| CN101789456A (en) | Lead-free aluminum paste for solar battery | |
| CN103459310B (en) | Compound semiconductor and application thereof | |
| WO2013109583A2 (en) | Non fire-through aluminum conductor reflector paste for back surface passivated cells with laser fired contacts | |
| EP3137429A1 (en) | Conductive paste, electrode and solar cell | |
| CN109390076B (en) | Anti-aging low-temperature curing type back silver paste for all-aluminum back surface field crystalline silicon solar cell | |
| CN103000256A (en) | Undoped solar cell back aluminum slurry | |
| CN113003936A (en) | Chalcogenide composite glass powder and preparation method and application thereof | |
| CN107759092B (en) | Lead-free glass powder for back passivation of crystalline silicon solar cell back silver paste and preparation method thereof | |
| Pan et al. | Silicon-based solar cell: Materials, fabrication and applications | |
| CN113087400B (en) | Low-melting-point glass powder for improving conversion efficiency of solar cell and preparation method thereof | |
| TWI432392B (en) | Glass frits | |
| CN109920872A (en) | Solar cell backboard Weather-proof film | |
| CN102842640B (en) | A kind of method making silicon wafer epitaxial layer and relevant crystal silicon board structure | |
| CN111009334B (en) | Conductive silver paste for solar cell and preparation method thereof | |
| CN104150769A (en) | Solar cell | |
| EP3289592A1 (en) | Conductive paste, electrode and solar cell | |
| Prabhansu et al. | Fabrication and Manufacturing Process of Solar Cell: Part II | |
| CN117401903A (en) | Glass frit for front paste of solar cell, paste and monocrystalline silicon solar cell | |
| CN110903032A (en) | Preparation method of photovoltaic glass material |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |