CN112992935A - Repairing structure and method for insulating layer in display panel - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 126
- 230000008439 repair process Effects 0.000 claims abstract description 33
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims description 18
- 239000011810 insulating material Substances 0.000 claims description 16
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
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- 229910052710 silicon Inorganic materials 0.000 claims description 4
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- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 230000007547 defect Effects 0.000 claims description 3
- 238000005240 physical vapour deposition Methods 0.000 claims description 3
- -1 acryl Chemical group 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 239000012774 insulation material Substances 0.000 claims 1
- 230000005611 electricity Effects 0.000 abstract description 7
- 230000003068 static effect Effects 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
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- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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Abstract
The application provides a repair structure and a repair method of an insulating layer in a display panel, which can repair a through hole in the insulating layer of the display panel, prevent the through hole in the insulating layer of the display panel from causing static electricity accumulated between a second metal layer and a first metal layer to break down a semiconductor layer between the second metal layer and the first metal layer, thereby causing short circuit between the second metal layer and the first metal layer to cause partial non-lighting or black screen phenomenon of the display panel, and have no any limit on the shape, size and position of the through hole.
Description
Technical Field
The present disclosure relates to display technologies, and particularly to a repairing structure and a repairing method for an insulating layer in a display panel.
Background
In the manufacturing of the display panel, the display panel needs to use a vapor deposition film-forming technique and an organic coating technique to manufacture the insulating layer 150 in the process in both the display area and the non-display area, fig. 1 is a top view of the display panel provided in this embodiment of the present application, and as shown in fig. 1, the display panel forms the first metal layer 120, the semiconductor layer 130, the second metal layer 140, and the insulating layer 150 on the array substrate 110 layer by layer.
When the display panel is manufactured in a mass production manner, the insulating layer 150 is easily affected by a foreign substance to generate the through hole 101, and further, in the process of etching the insulating layer 150 to expose the drain of the thin film transistor in the second metal layer 140 so as to connect the drain with a pixel electrode layer formed on the insulating layer 150 in the subsequent process, the through hole 101 in the insulating layer 150 causes the insulating layer 150 to be partially lost, so that a charge part which needs to be insulated from the second metal layer 140 by the insulating layer 150 enters the second metal layer 140 from the through hole 101 in the etching process, and thus, the voltage between the second metal layer 140 and the first metal layer 120 is increased. As the display panel is used for a long time, when the charges in the second metal layer 140 are gradually accumulated to a certain degree, the static electricity generated between the second metal layer 140 and the first metal layer 120 breaks down the semiconductor layer 130 between the second metal layer 140 and the first metal layer 120, resulting in a short circuit between the second metal layer 140 and the first metal layer 120. If the short circuit occurs in the display area of the display panel, the thin film transistor switches of part of the pixels are abnormal and not bright; if the short circuit occurs in a non-display area of the display panel, for example, fig. 2 is a cross-sectional view of a GOA area of the display panel provided in the embodiment of the present application (the insulating layer 150 is not shown in fig. 2), as shown in fig. 2, if the insulating layer 150 of the GOA (Gate on Array) circuit has a through hole 101, a part of the GOA units in the GOA circuit may fail, so that the timing of the display panel may be disordered, and the display panel may have a black screen problem.
Therefore, it is necessary to provide a repairing structure and a repairing method for an insulating layer in a display panel, so as to repair a through hole formed in the insulating layer, and prevent the through hole in the insulating layer from causing a portion of the display panel to be unlit or causing a black screen.
Disclosure of Invention
In order to solve the above problem, embodiments of the present application provide a repairing structure and a repairing method for an insulating layer in a display panel, so as to repair a through hole appearing in the insulating layer, and prevent the through hole in the insulating layer from causing a portion of the display panel to be unlit or causing a black screen problem.
In a first aspect, an embodiment of the present application provides a repairing structure for an insulating layer in a display panel, where the repairing structure includes:
the first metal layer is arranged on the array substrate;
a semiconductor layer disposed on the first metal layer;
a second metal layer disposed on the semiconductor layer;
the insulating layer is arranged on the second metal layer and is provided with a through hole, and the through hole penetrates through the insulating layer and extends to the second metal layer;
and the repairing layer is filled into the through hole and is made of an insulating material.
In some embodiments, the insulating material is one or more of an acrylic material, a photoresist material, a color resist material, a gap control material, and a silicon composition.
In some embodiments, the insulating layer includes an insulating layer located at a display region of the display panel, and an insulating layer located at a non-display region of the display panel.
In some embodiments, the surface of the repair layer is flush with the surface of the second metal layer.
In some embodiments, the first metal layer includes a scan line and a gate electrode of a thin film transistor, and the second metal layer includes a data line, a source electrode of a thin film transistor, and a drain electrode of a thin film transistor.
In a second aspect, an embodiment of the present application further provides a method for repairing an insulating layer in a display panel, where the method includes:
forming a first metal layer on the array substrate;
forming a semiconductor layer on the first metal layer;
forming a second metal layer on the semiconductor layer;
forming an insulating layer on the second metal layer;
and when a through hole is generated in the insulating layer and extends to the second metal layer, filling the through hole to form a repairing layer, wherein the repairing layer is made of an insulating material.
In some embodiments, the via is filled by chemical vapor deposition, physical vapor deposition, or ink jet.
In some embodiments, the display panel is inspected by automated optical inspection to determine the location and/or size of the through-holes.
In some embodiments, the via is filled using a defect filling apparatus.
In some embodiments, the repair method further comprises: and after the through hole is filled to form the repairing layer, carrying out planarization operation on the repairing layer.
The repair structure and the repair method for the insulating layer in the display panel provided by the embodiment of the application can repair a through hole in the insulating layer of the display panel, prevent the through hole in the insulating layer of the display panel from enabling static electricity accumulated between the second metal layer and the first metal layer to break down a semiconductor layer between the second metal layer and the first metal layer, and further enable a short circuit to occur between the second metal layer and the first metal layer, so that the display panel is partially not bright or has a black screen phenomenon.
Drawings
The technical solution and other advantages of the present application will become apparent from the detailed description of the embodiments of the present application with reference to the accompanying drawings.
Fig. 1 is a top view of a display panel provided in an embodiment of the present application.
Fig. 2 is a cross-sectional view of a GOA area of a display panel according to an embodiment of the present disclosure.
Fig. 3 is a schematic structural diagram of a repairing structure of an insulating layer in a display panel according to an embodiment of the present disclosure.
Fig. 4 is a flowchart illustrating a method for repairing an insulating layer in a display panel according to an embodiment of the present disclosure.
Fig. 5 is a schematic repairing diagram of a method for repairing a structure of an insulating layer in a display panel according to an embodiment of the present disclosure.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Fig. 3 is a schematic structural diagram of a repairing structure of an insulating layer in a display panel according to an embodiment of the present application, and with reference to fig. 1 and fig. 3, an embodiment of the present application provides a repairing structure 1 of an insulating layer in a display panel, where the repairing structure 1 includes:
a first metal layer 120 disposed on the array substrate 110;
a semiconductor layer 130 disposed on the first metal layer 120;
a second metal layer 140 disposed on the semiconductor layer 130;
an insulating layer 150 disposed on the second metal layer 140, wherein the insulating layer 150 has a through hole 101 therein, and the through hole 101 penetrates the insulating layer 150 and extends to the second metal layer 140;
and a repair layer 102 filled in the through hole 101, the repair layer 102 being made of an insulating material.
Specifically, when the via 101 is formed in the insulating layer 150 and the via 101 penetrates through the insulating layer 150 and extends to the second metal layer 140, the insulating layer 150 is partially missing at the via 101, which may cause a part of the charges that should be insulated from the second metal layer 140 by the insulating layer 150 to enter the second metal layer 140 from the via 101 when the insulating layer 150 is etched, so that the voltage between the second metal layer 140 and the first metal layer 120 is increased. As the display panel is used for a long time, when the charges in the second metal layer 140 gradually accumulate to a certain degree, the static electricity generated between the second metal layer 140 and the first metal layer 120 may break down the semiconductor layer 130 between the second metal layer 140 and the first metal layer 120, and a short circuit may occur between the second metal layer 140 and the first metal layer 120.
The present embodiment fills and forms the repairing layer 102 in the through hole 101, and repairs the through hole 101 appearing in the insulating layer 150 through the repairing layer 102, thereby preventing the through hole in the insulating layer of the display area of the display panel from making the portion of the display panel not bright, or preventing the through hole in the insulating layer of the non-display area of the display panel from making the display panel have a black screen problem.
Note that the insulating material constituting the insulating layer 150 is made of an organic material or an inorganic material, and similarly, the insulating material used for the repair layer 102 may be made of an organic material or an inorganic material, and the insulating material used for the repair layer 102 may be the same as or different from the insulating material constituting the insulating layer 150. Specifically, the insulating material used for the repairing layer 102 is one or more of an acrylic material, a photoresist material, a color-resist material, a gap-control material, and a silicon composition.
It is understood that the insulating layer 150 includes an insulating layer located at a display region of the display panel, and an insulating layer located at a non-display region of the display panel. That is, the repairing structure 1 can be applied to the insulating layer of the display region, and can also be applied to the insulating layer of the GOA region in the non-display region as shown in fig. 2, so as to prevent the through hole in the insulating layer of the display region of the display panel from making the display panel part not bright, or prevent the through hole in the insulating layer of the non-display region of the display panel from making the display panel have a black screen problem.
It should be noted that, in consideration of the subsequent processes, the shape of the repair layer 102 needs to be matched with the shape of the through hole 1, i.e., the surface of the repair layer 102 needs to be flush with the surface of the second metal layer 140.
In some embodiments, the first metal layer 120 includes a scan line, a gate of a thin film transistor, and other metal traces on the same layer as the scan line, and the second metal layer 140 includes a data line, a source of the thin film transistor, a drain of the thin film transistor, and other metal traces on the same layer as the data line.
Fig. 4 is a schematic flow chart of a method for repairing a structure of an insulating layer in a display panel according to an embodiment of the present disclosure, and with reference to fig. 3 and 4, an embodiment of the present disclosure further provides a method for repairing an insulating layer in a display panel, where the method includes:
s1, forming a first metal layer 120 on the array substrate 110;
in this embodiment, the array substrate 110 may be a glass substrate, or may be a substrate made of other materials, such as a flexible substrate, a material substrate, and the like.
S2, forming a semiconductor layer 130 on the first metal layer 120;
in the present embodiment, the semiconductor layer 130 serves to insulate the first metal layer 120 and the second metal layer 140 from each other.
S3, forming a second metal layer 140 on the semiconductor layer 130;
s4, forming an insulating layer 150 on the second metal layer 140;
s5, when the via hole 101 is formed in the insulating layer 150 and the via hole 101 extends through the insulating layer 150 to the second metal layer 140, the via hole 101 is filled to form a repairing layer 102, wherein the repairing layer 102 is made of an insulating material.
Specifically, when the via 101 is formed in the insulating layer 150 and the via 101 penetrates through the insulating layer 150 and extends to the second metal layer 140, the insulating layer 150 is partially missing at the via 101, which may cause a part of the charges that should be insulated from the second metal layer 140 by the insulating layer 150 to enter the second metal layer 140 from the via 101 when the insulating layer 150 is etched, so that the voltage between the second metal layer 140 and the first metal layer 120 is increased. As the display panel is used for a long time, when the charges in the second metal layer 140 are gradually accumulated to a certain degree, the static electricity generated between the second metal layer 140 and the first metal layer 120 breaks down the semiconductor layer 130 between the second metal layer 140 and the first metal layer 120, resulting in a short circuit between the second metal layer 140 and the first metal layer 120.
The present embodiment fills and forms the repairing layer 102 in the through hole 101, and repairs the through hole 101 appearing in the insulating layer 150 through the repairing layer 102, thereby preventing the through hole in the insulating layer of the display area of the display panel from making the portion of the display panel not bright, or preventing the through hole in the insulating layer of the non-display area of the display panel from making the display panel have a black screen problem.
In some embodiments, the via 101 is filled by chemical vapor deposition, physical vapor deposition, or ink jet.
In some embodiments, the display panel is inspected by Automated Optical Inspection (AOI) (not shown) to determine the location and/or size of the via 101. The through holes of the insulating layer may be repaired inside the display panel by automatic optical inspection, or may be repaired outside the display panel by inspection outside the display panel.
Fig. 5 is a schematic repairing diagram of a method for repairing a structure of an insulating layer in a display panel according to an embodiment of the present disclosure, and as shown in fig. 5, a defect filling apparatus 2 is used to fill a via hole 101 to form a repairing layer 102.
Based on the above embodiment, the repairing method further includes: after the through hole 101 is filled to form the repairing layer 102, the repairing layer 102 is planarized, so that the repairing layer 102 has a flat surface, that is, the surface of the repairing layer 102 is flush with the surface of the second metal layer 140, specifically, the upper surface of the repairing layer 102 is flush with the upper surface of the second metal layer, and the lower surface of the repairing layer 102 is flush with the lower surface of the second metal layer.
In addition, an embodiment of the present application further provides a display device, where the display device includes the repair structure 1 for the insulating layer 150 in the display panel, where the repair structure 1 includes:
a first metal layer 120 disposed on the array substrate 110;
a semiconductor layer 130 disposed on the first metal layer 120;
a second metal layer 140 disposed on the semiconductor layer 130;
an insulating layer 150 disposed on the second metal layer 140, wherein the insulating layer 150 has a through hole 101 therein, and the through hole 101 extends from the insulating layer 150 to the second metal layer 140;
and a repair layer 102 filled in the through hole 101, the repair layer 102 being made of an insulating material.
Specifically, when the via 101 is formed in the insulating layer 150 and the via 101 penetrates through the insulating layer 150 and extends to the second metal layer 140, the insulating layer 150 is partially missing at the via 101, which may cause a part of the charges that should be insulated from the second metal layer 140 by the insulating layer 150 to enter the second metal layer 140 from the via 101 when the insulating layer 150 is etched, so that the voltage between the second metal layer 140 and the first metal layer 120 is increased. As the display panel is used for a long time, when the charges in the second metal layer 140 are gradually accumulated to a certain degree, the static electricity generated between the second metal layer 140 and the first metal layer 120 breaks down the semiconductor layer 130 between the second metal layer 140 and the first metal layer 120, resulting in a short circuit between the second metal layer 140 and the first metal layer 120.
The present embodiment fills and forms the repairing layer 102 in the through hole 101, and repairs the through hole 101 appearing in the insulating layer 150 through the repairing layer 102, thereby preventing the through hole in the insulating layer of the display area of the display panel from making the portion of the display panel not bright, or preventing the through hole in the insulating layer of the non-display area of the display panel from making the display panel have a black screen problem.
It should be noted that the insulating material constituting the insulating layer 150 is made of an organic material or an inorganic material, and similarly, the insulating material used for the repairing layer 102 may also be made of an organic material or an inorganic material, specifically, the insulating material used for the repairing layer 102 is one or more of an acrylic material, a photoresist material, a color resist material, a gap control material, and a silicon composition.
It is understood that the insulating layer 150 includes an insulating layer of a display region of the display panel, and an insulating layer of a non-display region of the display panel. That is, the repairing structure 1 can be applied to the insulating layer of the display region, and can also be applied to the insulating layer of the GOA region in the non-display region as shown in fig. 2, so as to prevent the through hole in the insulating layer of the display region of the display panel from making the display panel part not bright, or prevent the through hole in the insulating layer of the non-display region of the display panel from making the display panel have a black screen problem.
It should be noted that, in consideration of the subsequent processes, the shape of the repair layer 102 needs to be matched with the shape of the through hole 1, that is, the surface of the repair layer 102 needs to be flush with the surface of the second metal layer 140, specifically, the upper surface of the repair layer 102 is flush with the upper surface of the second metal layer, and the lower surface of the repair layer 102 is flush with the lower surface of the second metal layer.
In some embodiments, the first metal layer 120 includes a scan line, a gate of a thin film transistor, and other metal traces on the same layer as the scan line, and the second metal layer 140 includes a data line, a source of the thin film transistor, a drain of the thin film transistor, and other metal traces on the same layer as the data line.
The repairing structure and the repairing method for the insulating layer in the display panel provided by the embodiment of the application can repair the through hole 101 in the insulating layer 150 of the display panel, prevent the static electricity accumulated between the second metal layer 140 and the first metal layer 120 from puncturing the semiconductor layer 130 between the second metal layer 140 and the first metal layer 120 due to the through hole 101 in the insulating layer 150 of the display panel, and further cause the short circuit between the second metal layer 140 and the first metal layer 120 to cause the partial non-lighting or black screen phenomenon of the display panel.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
The above description of the embodiments is only for assisting understanding of the technical solutions and the core ideas thereof; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.
Claims (10)
1. A repair structure of an insulating layer in a display panel, comprising:
the first metal layer is arranged on the array substrate;
a semiconductor layer disposed on the first metal layer;
a second metal layer disposed on the semiconductor layer;
the insulating layer is arranged on the second metal layer and is provided with a through hole, and the through hole penetrates through the insulating layer and extends to the second metal layer;
and the repairing layer is filled into the through hole and is made of an insulating material.
2. The repair structure of an insulation layer according to claim 1, wherein the insulation material is one or more of an acryl material, a photoresist material, a color resist material, a gap control material, and a silicon composition.
3. The repairing structure of the insulating layer in the display panel according to claim 1, wherein the insulating layer comprises an insulating layer located in a display region of the display panel and an insulating layer located in a non-display region of the display panel.
4. The repair structure of an insulating layer in a display panel according to claim 1, wherein a surface of the repair layer is flush with a surface of the second metal layer.
5. The repair structure of an insulating layer in a display panel according to any one of claims 1 to 4, wherein the first metal layer includes a scan line and a gate electrode of a thin film transistor, and the second metal layer includes a data line, a source electrode of the thin film transistor, and a drain electrode of the thin film transistor.
6. A method for repairing an insulating layer in a display panel includes:
forming a first metal layer on the array substrate;
forming a semiconductor layer on the first metal layer;
forming a second metal layer on the semiconductor layer;
forming an insulating layer on the second metal layer;
and when a through hole is generated in the insulating layer and extends to the second metal layer through the insulating layer, filling the through hole to form a repairing layer, wherein the repairing layer is made of an insulating material.
7. The method of claim 6, wherein the through holes are filled by chemical vapor deposition, physical vapor deposition or ink jet.
8. The method of repairing an insulating layer in a display panel according to claim 6, wherein the display panel is inspected by automatic optical inspection to determine the position and/or size of the via.
9. The method of repairing an insulating layer in a display panel according to claim 6, wherein the via hole is filled using a defect filling apparatus.
10. The method for repairing an insulating layer in a display panel according to any one of claims 6 to 9, further comprising: and after the through hole is filled to form the repairing layer, carrying out planarization operation on the repairing layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110178077.8A CN112992935A (en) | 2021-02-09 | 2021-02-09 | Repairing structure and method for insulating layer in display panel |
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| CN202110178077.8A CN112992935A (en) | 2021-02-09 | 2021-02-09 | Repairing structure and method for insulating layer in display panel |
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| CN112992935A true CN112992935A (en) | 2021-06-18 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113764436A (en) * | 2021-09-03 | 2021-12-07 | 深圳市华星光电半导体显示技术有限公司 | Array substrate repairing method and device |
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| CN112078158A (en) * | 2019-06-12 | 2020-12-15 | 帆宣系统科技股份有限公司 | Film sheet attaching and repairing method for polyimide film |
Cited By (2)
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| CN113764436A (en) * | 2021-09-03 | 2021-12-07 | 深圳市华星光电半导体显示技术有限公司 | Array substrate repairing method and device |
| CN113764436B (en) * | 2021-09-03 | 2022-12-06 | 深圳市华星光电半导体显示技术有限公司 | Array substrate repairing method and device |
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Application publication date: 20210618 |