CN112985651B - Gear dynamic meshing force detection film sensor and application method thereof - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000001514 detection method Methods 0.000 title abstract description 33
- 239000010408 film Substances 0.000 claims abstract description 62
- 239000010409 thin film Substances 0.000 claims abstract description 22
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 30
- 239000010410 layer Substances 0.000 claims description 21
- 239000011241 protective layer Substances 0.000 claims description 15
- 229910052961 molybdenite Inorganic materials 0.000 claims description 14
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims description 14
- 230000000873 masking effect Effects 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 239000011159 matrix material Substances 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 239000013077 target material Substances 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 13
- 230000004044 response Effects 0.000 abstract description 7
- 230000010354 integration Effects 0.000 abstract description 4
- 230000009471 action Effects 0.000 abstract description 2
- 230000003862 health status Effects 0.000 abstract 1
- 230000006872 improvement Effects 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 238000003745 diagnosis Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- G01L1/00—Measuring force or stress, in general
- G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L5/00—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes
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Abstract
本发明公开了一种齿轮动态啮合力检测薄膜传感器及其应用方法,所述齿轮动态啮合力检测薄膜传感器,包括:绝缘层,用于设置于齿轮基体表面;电极,电极溅射于绝缘层的表面;电极包括齿电极和轴电极,齿电极和轴电极通过导线电连接;压力敏感元件,包括:MoS2压阻薄膜;其中,MoS2压阻薄膜为弓形结构,MoS2压阻薄膜溅射于轮齿啮合齿面的绝缘层的表面;MoS2压阻薄膜与齿电极电连接。本发明的齿轮动态啮合力检测薄膜传感器,在齿轮啮合过程中,压阻薄膜受应力作用发生应变,电阻发生规律变化,输出性能稳定,具有一体化、超薄型、响应快、超灵敏等优势,可实时监测齿轮运行的健康状态。
The invention discloses a gear dynamic meshing force detection thin film sensor and an application method thereof. The gear dynamic meshing force detection thin film sensor comprises: an insulating layer, which is arranged on the surface of a gear base; an electrode, which is sputtered on the insulating layer. Surface; the electrode includes a tooth electrode and a shaft electrode, and the tooth electrode and the shaft electrode are electrically connected by wires; the pressure sensitive element includes: a MoS 2 piezoresistive film; wherein, the MoS 2 piezoresistive film is an arcuate structure, and the MoS 2 piezoresistive film is sputtered The surface of the insulating layer on the gear teeth meshing tooth surface; the MoS 2 piezoresistive film is electrically connected with the tooth electrode. The gear dynamic meshing force detection film sensor of the present invention has the advantages of integration, ultra-thin type, fast response, ultra-sensitivity and the like, in the process of gear meshing, the piezoresistive film is strained under the action of stress, the resistance changes regularly, and the output performance is stable. , which can monitor the health status of gear operation in real time.
Description
技术领域technical field
本发明属于传感器技术领域,涉及磁控溅射MoS2领域,特别涉及一种齿轮动态啮合力检测薄膜传感器及其应用方法。The invention belongs to the technical field of sensors, relates to the field of magnetron sputtering MoS 2 , and particularly relates to a gear dynamic meshing force detection thin-film sensor and an application method thereof.
背景技术Background technique
齿轮传动是机械设备中最常见的一种传动方式,其具有稳定的传动比,具有传动效率高、工作性能可靠、使用寿命长等优点;同时,齿轮传动在工作时产生动载荷,振动及噪声问题突出,无法实现过载保护,对设备运行安全带来隐患。Gear transmission is the most common transmission method in mechanical equipment. It has a stable transmission ratio, high transmission efficiency, reliable performance, and long service life. At the same time, gear transmission generates dynamic load, vibration and noise during operation. The problem is prominent, and overload protection cannot be realized, which brings hidden dangers to the safety of equipment operation.
为保证设备安全、高效运行,通过对齿轮动态啮合力的检测,可实现齿轮啮合时的在线监测和故障诊断。目前,对齿轮啮合力的监测和故障诊断是利用振动传感器采集机械设备运行时的振动信号,并没有直接的测量装置,它是通过不同的分析方法提取特征信号,但其算法复杂多变,很难在实际中得到真实有效的齿轮动态啮合力。In order to ensure the safe and efficient operation of the equipment, the on-line monitoring and fault diagnosis of gear meshing can be realized by detecting the dynamic meshing force of the gears. At present, the monitoring and fault diagnosis of gear meshing force is to use vibration sensors to collect vibration signals during the operation of mechanical equipment, and there is no direct measurement device. It extracts characteristic signals through different analysis methods, but its algorithm is complex and changeable, and it is very difficult to measure. It is difficult to obtain the real and effective dynamic meshing force of gears in practice.
综上,亟需一种新的齿轮动态啮合力检测薄膜传感器及其应用方法。In conclusion, there is an urgent need for a novel gear dynamic meshing force detection thin-film sensor and its application method.
发明内容SUMMARY OF THE INVENTION
本发明的目的在于提供一种齿轮动态啮合力检测薄膜传感器及其应用方法,以解决上述存在的一个或多个技术问题。本发明的齿轮动态啮合力检测薄膜传感器,在齿轮啮合过程中,压阻薄膜受应力作用发生应变,电阻发生规律变化,输出性能稳定,具有一体化、超薄型、响应快、超灵敏等优势,可实时监测齿轮运行的健康状态;另外,其制备方法工艺简单,操作易控、压阻薄膜沉积速率高、成膜致密均匀,易于大批生产。The purpose of the present invention is to provide a gear dynamic meshing force detection film sensor and an application method thereof, so as to solve one or more of the above-mentioned technical problems. The gear dynamic meshing force detection film sensor of the present invention has the advantages of integration, ultra-thin type, fast response, ultra-sensitivity and the like, in the process of gear meshing, the piezoresistive film is strained under the action of stress, the resistance changes regularly, and the output performance is stable. , the health state of the gear operation can be monitored in real time; in addition, the preparation method has the advantages of simple process, easy operation and control, high piezoresistive film deposition rate, dense and uniform film formation, and easy mass production.
为达到上述目的,本发明采用以下技术方案:To achieve the above object, the present invention adopts the following technical solutions:
本发明的一种齿轮动态啮合力检测薄膜传感器,包括:A gear dynamic meshing force detection film sensor of the present invention includes:
绝缘层,用于设置于齿轮基体表面;其中,所述齿轮基体包括齿轮轴和轮齿;an insulating layer, used for being arranged on the surface of the gear base body; wherein, the gear base body includes a gear shaft and gear teeth;
电极,所述电极溅射于所述绝缘层的表面;所述电极包括齿电极和轴电极,所述齿电极和所述轴电极通过导线电连接;其中,所述齿电极用于设置于轮齿的啮合齿面或轮齿侧面,所述轴电极用于设置于齿轮轴的表面;an electrode, the electrode is sputtered on the surface of the insulating layer; the electrode includes a tooth electrode and a shaft electrode, and the tooth electrode and the shaft electrode are electrically connected by a wire; wherein, the tooth electrode is used for being arranged on the wheel The meshing flank or flank of the tooth, the shaft electrode is used to be arranged on the surface of the gear shaft;
压力敏感元件,包括:MoS2压阻薄膜;其中,所述MoS2压阻薄膜为弓形结构,所述MoS2压阻薄膜溅射于轮齿啮合齿面的绝缘层的表面;所述MoS2压阻薄膜与所述齿电极电连接。A pressure sensitive element, comprising: a MoS 2 piezoresistive film; wherein, the MoS 2 piezoresistive film is an arcuate structure, and the MoS 2 piezoresistive film is sputtered on the surface of the insulating layer of the gear tooth meshing tooth surface; the MoS 2 The piezoresistive film is electrically connected to the tooth electrode.
本发明的进一步改进在于,所述MoS2压阻薄膜是利用硬质掩蔽以磁控溅射的方法采用MoS2靶材溅射而成。A further improvement of the present invention lies in that the MoS 2 piezoresistive thin film is sputtered from a MoS 2 target by using a hard mask and a magnetron sputtering method.
本发明的进一步改进在于,所述MoS2压阻薄膜的厚度为1~5μm。A further improvement of the present invention is that the thickness of the MoS 2 piezoresistive film is 1-5 μm.
本发明的进一步改进在于,所述电极和所述MoS2压阻薄膜均通过MEMS技术溅射而成。A further improvement of the present invention is that both the electrode and the MoS 2 piezoresistive film are sputtered by MEMS technology.
本发明的进一步改进在于,还包括:保护层;所述保护层覆盖所述MoS2压阻薄膜、所述电极。A further improvement of the present invention is that it further comprises: a protective layer; the protective layer covers the MoS 2 piezoresistive film and the electrode.
本发明的进一步改进在于,所述绝缘层、所述保护层均为Si02涂层。A further improvement of the present invention is that the insulating layer and the protective layer are both SiO 2 coatings.
本发明的进一步改进在于,还包括:电路板,用于汇集、连接各齿端部电极。A further improvement of the present invention is that it further comprises: a circuit board for collecting and connecting the electrodes at the ends of the teeth.
本发明的进一步改进在于,所述电路板布置于齿轮轴的轴端,所述电路板通过导线与所述轴电极实现电连接。A further improvement of the present invention is that the circuit board is arranged on the shaft end of the gear shaft, and the circuit board is electrically connected to the shaft electrode through wires.
本发明的一种齿轮动态啮合力检测薄膜传感器的应用方法,用于齿轮动态啮合力检测。An application method of a film sensor for gear dynamic meshing force detection of the present invention is used for gear dynamic meshing force detection.
本发明的一种齿轮动态啮合力检测薄膜传感器的应用方法,包括以下步骤:An application method of a gear dynamic meshing force detection film sensor of the present invention includes the following steps:
在齿轮基体均匀溅射绝缘材料,形成绝缘层;The insulating material is uniformly sputtered on the gear base to form an insulating layer;
在绝缘层上利用硬质掩蔽,采用磁控溅射的工艺制备图形化的电极和MoS2压阻薄膜;其中,所述MoS2压阻薄膜与齿电极的输入端接触,齿电极的输出端通过导线与轴电极电连接。A patterned electrode and a MoS 2 piezoresistive film are prepared on the insulating layer by a magnetron sputtering process using hard masking; wherein, the MoS 2 piezoresistive film is in contact with the input end of the tooth electrode, and the output end of the tooth electrode It is electrically connected to the shaft electrode through a wire.
与现有技术相比,本发明具有以下有益效果:Compared with the prior art, the present invention has the following beneficial effects:
本发明的齿轮动态啮合力检测薄膜传感器中,磁控溅射MoS2薄膜受到应力应变其电阻值变化显著,且随压力的改变呈现出规律性变化,输出性能优异;通过齿轮啮合的压力变化实现齿轮啮合动态力的检测功能;基于该压阻薄膜制备的齿轮动态啮合力检测薄膜传感器具有超薄型、超灵敏、响应快等特点,以及易与齿轮基体实现一体化等优势。In the gear dynamic meshing force detection thin film sensor of the present invention, the resistance value of the magnetron sputtered MoS 2 thin film changes significantly under stress and strain, and exhibits regular changes with the change of pressure, and the output performance is excellent; The detection function of gear meshing dynamic force; the gear dynamic meshing force detection film sensor prepared based on the piezoresistive film has the characteristics of ultra-thin, ultra-sensitive, fast response, etc., as well as the advantages of easy integration with the gear base.
本发明中,敏感元件在保护层的封装保护下,具有良好的耐磨性和密封性,避免了齿轮啮合时敏感元件的磨损和环境中水汽进入敏感元件中,从而保证齿轮啮合力检测薄膜传感器的性能,同时传感器的使用寿命。In the present invention, the sensitive element has good wear resistance and sealing performance under the encapsulation protection of the protective layer, which avoids the wear of the sensitive element when the gears are engaged and the water vapor in the environment entering the sensitive element, thereby ensuring the gear meshing force detection film sensor performance and sensor lifetime.
本发明的基于磁控溅射工艺制备的MoS2的齿轮啮合力检测薄膜传感器,可在齿轮齿面实现齿轮啮合时的动态力测量;通过MEMS技术实现了敏感元件的图形化和微型化,使其具有较高的灵敏度;敏感元件采用磁控溅射方法,可实现大面积均匀制备。The MoS 2 gear meshing force detection film sensor prepared by the magnetron sputtering process of the present invention can realize dynamic force measurement when the gear meshes on the gear tooth surface; It has high sensitivity; the sensitive element adopts the magnetron sputtering method, which can realize the uniform preparation of large area.
本发明公开了基于磁控溅射MoS2的齿轮动态啮合力检测薄膜传感器的制备方法;制备的齿轮动态啮合力检测薄膜传感器具有超薄、响应快、超灵敏等特点。具体的,本发明磁控溅射工艺制备的MoS2具有压阻效应,其制备工艺简单,操作易控、成膜致密均匀,可大面积生产,具有广泛的应用前景。The invention discloses a preparation method of a gear dynamic meshing force detection thin film sensor based on magnetron sputtering MoS2 ; the prepared gear dynamic meshing force detection thin film sensor has the characteristics of ultra-thin, fast response, ultra-sensitivity and the like. Specifically, the MoS2 prepared by the magnetron sputtering process of the present invention has a piezoresistive effect, the preparation process is simple, the operation is easy to control, the film formation is dense and uniform, can be produced in a large area, and has a wide application prospect.
附图说明Description of drawings
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面对实施例或现有技术描述中所需要使用的附图做简单的介绍;显而易见地,下面描述中的附图是本发明的一些实施例,对于本领域普通技术人员来说,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the accompanying drawings used in the description of the embodiments or the prior art; obviously, the accompanying drawings in the following description are For some embodiments of the present invention, for those of ordinary skill in the art, other drawings can also be obtained from these drawings without creative efforts.
图1是本发明实施例的一种基于磁控溅射MoS2的齿轮动态啮合力检测薄膜传感器的结构示意图;1 is a schematic structural diagram of a thin-film sensor for detecting dynamic meshing force of gears based on magnetron sputtering MoS 2 according to an embodiment of the present invention;
图2是本发明实施例中,单齿面啮合力检测薄膜传感器的俯视结构示意图;2 is a schematic top view of the structure of a single tooth surface meshing force detection film sensor in an embodiment of the present invention;
图3是本发明实施例中,单齿面啮合力检测薄膜传感器的侧视结构示意图;3 is a schematic side view of the structure of a single-tooth surface meshing force detection film sensor in an embodiment of the present invention;
图中,1、齿轮基体;2、绝缘层;3、齿电极;4、压力敏感元件;5、保护层;6、齿轮轴;7、轴电极;8、电路板;9、导线。In the figure, 1, gear base; 2, insulating layer; 3, tooth electrode; 4, pressure sensitive element; 5, protective layer; 6, gear shaft; 7, shaft electrode; 8, circuit board; 9, wire.
具体实施方式Detailed ways
为使本发明实施例的目的、技术效果及技术方案更加清楚,下面结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述;显然,所描述的实施例是本发明一部分实施例。基于本发明公开的实施例,本领域普通技术人员在没有做出创造性劳动的前提下所获得的其它实施例,都应属于本发明保护的范围。In order to make the purposes, technical effects and technical solutions of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention; are some embodiments of the present invention. Based on the embodiments disclosed in the present invention, other embodiments obtained by persons of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.
请参阅图1至图3,本发明实施例的一种基于磁控溅射MoS2的齿轮动态啮合力检测薄膜传感器,具体可以包括:Referring to FIGS. 1 to 3 , a thin-film sensor for detecting gear dynamic meshing force based on magnetron sputtering MoS 2 according to an embodiment of the present invention may specifically include:
齿轮基体1,所述齿轮基体1表层均匀溅射绝缘层2、图形化的电极及MoS2压阻薄膜;所述图形化的电极溅射在绝缘层2表面;所述MoS2压阻薄膜与电极接触;其中,所述MoS2压阻薄膜采用磁控溅射方法制备,构成压力敏感元件4。
本发明实施例中,所述电极和所述MoS2压阻薄膜均通过MEMS技术溅射而成。本发明实施例的基于磁控溅射工艺制备的MoS2的齿轮啮合力检测薄膜传感器,可在齿轮齿面实现齿轮啮合时的动态力测量;通过MEMS技术实现了敏感元件的图形化和微型化,使其具有较高的灵敏度;敏感元件采用磁控溅射方法,可实现大面积均匀制备。In the embodiment of the present invention, both the electrode and the MoS 2 piezoresistive film are sputtered by MEMS technology. The MoS 2 gear meshing force detection thin film sensor prepared by the magnetron sputtering process in the embodiment of the present invention can realize the dynamic force measurement when the gear meshes on the gear tooth surface; realize the patterning and miniaturization of the sensitive element through the MEMS technology , so that it has high sensitivity; the sensitive element adopts the magnetron sputtering method, which can realize the uniform preparation of large area.
本发明实施例中,所述电极包括齿电极3和轴电极7,齿电极3和轴电极7之间利用导线9焊接连接。In the embodiment of the present invention, the electrodes include a
本发明实施例中,所述齿电极3布置于啮合齿面两侧及轮齿侧部,且利用硬质掩蔽采用磁控溅射的方法溅射而成。In the embodiment of the present invention, the
本发明实施例中,所述轴电极7均匀分布于齿轮两侧的轴面,且延伸至轴两端。In the embodiment of the present invention, the
本发明实施例中,还设置有保护层5;所述保护层5覆盖全部MoS2压阻薄膜和电极。本发明中,敏感元件在保护层5的封装保护下,具有良好的耐磨性和密封性,避免了齿轮啮合时敏感元件的磨损和环境中水汽进入敏感元件中,从而保证齿轮啮合力检测薄膜传感器的性能,同时传感器的使用寿命。In the embodiment of the present invention, a
本发明实施例中,还包括:电路板8;所述电路板8布置于轴端;所述电路板8和轴电极7之间利用导线9焊接连接。In the embodiment of the present invention, it further includes: a
本发明实施例中,所述MoS2压阻薄膜为弓型结构,布置于啮合齿面部位,利用硬质掩蔽以磁控溅射的方法采用MoS2靶材溅射而成。所述MoS2压阻薄膜,厚度为1~5μm。In the embodiment of the present invention, the MoS 2 piezoresistive film has an arcuate structure, is arranged on the meshing tooth surface, and is sputtered from a MoS 2 target by a magnetron sputtering method using hard masking. The MoS 2 piezoresistive film has a thickness of 1-5 μm.
本发明实施例的磁控溅射MoS2薄膜受到应力应变其电阻值变化显著,且随压力的改变呈现出规律性变化,输出性能优异;通过齿轮啮合的压力变化实现了齿轮啮合动态力的检测功能;基于该压阻薄膜制备的齿轮动态啮合力检测薄膜传感器具有超薄型、超灵敏、响应快等特点,以及易与齿轮基体实现一体化等优势。The resistance value of the magnetron sputtered MoS 2 film in the embodiment of the present invention changes significantly when subjected to stress and strain, and exhibits a regular change with the change of pressure, and the output performance is excellent; the dynamic force detection of gear meshing is realized by the pressure change of gear meshing. The gear dynamic meshing force detection film sensor prepared based on the piezoresistive film has the characteristics of ultra-thin, ultra-sensitive, fast response, etc., as well as the advantages of easy integration with the gear base.
本发明的工作原理包括:齿轮啮合过程中,由于啮合面的受力变化,啮合齿面发生应变,沉积在齿轮啮合面的MoS2薄膜和齿面具有良好的结合力,MoS2薄膜亦发生应变,MoS2内部结构发生变化,从而导致其电阻发生规律变化。可由MoS2薄膜电阻的变化推算其表面受力情况,实现齿轮动态啮合力的测量。The working principle of the invention includes: during the gear meshing process, due to the force change of the meshing surface, the meshing tooth surface is strained, the MoS 2 film deposited on the gear meshing surface and the tooth surface have a good bonding force, and the MoS 2 film is also strained , the internal structure of MoS 2 changes, resulting in regular changes in its resistance. The surface force can be calculated from the change of the MoS 2 sheet resistance, and the dynamic meshing force of the gear can be measured.
本发明实施例的一种基于磁控溅射MoS2的齿轮动态啮合力检测薄膜传感器的制备方法,包括以下步骤:A method for preparing a thin film sensor for gear dynamic meshing force detection based on magnetron sputtering MoS 2 according to an embodiment of the present invention includes the following steps:
在齿轮、齿轮轴上均匀溅射绝缘材料,形成绝缘层;The insulating material is uniformly sputtered on the gear and gear shaft to form an insulating layer;
在绝缘层上利用硬质掩蔽,采用磁控溅射的工艺制备图形化的电极和MoS2压阻薄膜;The patterned electrodes and MoS 2 piezoresistive films were prepared by magnetron sputtering using hard masking on the insulating layer;
其中,所述电极和所述MoS2压阻薄膜接触,所述MoS2压阻薄膜接触构成传感器的压力敏感元件。利用硬质掩蔽采用磁控溅射工艺在齿轮基体上制备电极和MoS2压力敏感薄膜。Wherein, the electrode is in contact with the MoS 2 piezoresistive film, and the MoS 2 piezoresistive film is in contact with the pressure sensitive element constituting the sensor. Electrodes and MoS pressure - sensitive films were fabricated on gear substrates by magnetron sputtering using hard masking.
本发明公开了基于磁控溅射MoS2的齿轮动态啮合力检测薄膜传感器的制备方法;制备的齿轮动态啮合力检测薄膜传感器具有超薄、响应快、超灵敏等特点。具体的,本发明磁控溅射工艺制备的MoS2具有压阻效应,其制备工艺简单,操作易控、成膜致密均匀,可大面积生产,具有广泛的应用前景。The invention discloses a preparation method of a gear dynamic meshing force detection thin film sensor based on magnetron sputtering MoS2 ; the prepared gear dynamic meshing force detection thin film sensor has the characteristics of ultra-thin, fast response, ultra-sensitivity and the like. Specifically, the MoS2 prepared by the magnetron sputtering process of the present invention has a piezoresistive effect, the preparation process is simple, the operation is easy to control, the film formation is dense and uniform, can be produced in a large area, and has a wide application prospect.
具体实施例1Specific Example 1
本发明实施例的一种基于磁控溅射MoS2的齿轮动态啮合力检测薄膜传感器,包括:轮齿基体;轮齿基体表面喷涂绝缘层2;在轮齿的侧面和啮合面部位通过硬质掩蔽在绝缘层2上溅射有齿电极3和敏感元件,敏感元件和齿电极3的表面再喷涂一层保护层5,所述保护层5覆盖全部MoS2压阻薄膜和电极,防止齿面啮合时发生磨损。其中,通过磁控溅射的方法制备的压阻薄膜构成传感器的压阻敏感元件。A thin film sensor for gear dynamic meshing force detection based on magnetron sputtering MoS 2 according to an embodiment of the present invention includes: a gear tooth base; an insulating
具体实施例2
本发明实施例的一种基于磁控溅射MoS2的齿轮动态啮合力检测薄膜传感器,还包括:齿轮轴6,齿轮轴6表面均匀包覆绝缘层2,轴电极7均匀分布在齿轮两侧的轴面上,延伸至轴的两端,与电路板8用导线9焊接连通。A thin film sensor for gear dynamic meshing force detection based on magnetron sputtering MoS 2 according to an embodiment of the present invention further includes: a
本发明的基于磁控溅射工艺制备的MoS2齿轮动态啮合力检测薄膜传感器,MoS2薄膜具有良好的压阻效应,利用硬质掩蔽,采用磁控溅射工艺制备的压阻薄膜可实现图形化和微型化。该基于磁控溅射MoS2的齿轮动态啮合力检测薄膜传感器具有超薄、响应快、超灵敏等特点。 The MoS 2 gear dynamic meshing force detection film sensor prepared based on the magnetron sputtering process of the present invention has a good piezoresistive effect, and the piezoresistive film prepared by the magnetron sputtering process can realize the pattern by using hard masking. miniaturization and miniaturization. The thin film sensor for gear dynamic meshing force detection based on magnetron sputtering MoS2 has the characteristics of ultra-thin, fast response, and ultra-sensitivity.
具体实施例3
本发明实施例与实施例1的区别仅在于,所述的绝缘层均匀分布在齿轮表面和齿轮轴表面,采用磁控溅射工艺制备厚度均匀的SiO2,厚度500nm。The only difference between the embodiment of the present invention and the
具体实施例4Specific Example 4
请参阅图1,本发明实施例与实施例1的区别仅在于,磁控溅射的MoS2敏感元件布置于每一个啮合齿面上,所述敏感元件的厚度为1μm。所述的敏感元件为弓形结构,采用MoS2靶材溅射而成。Referring to FIG. 1 , the only difference between the embodiment of the present invention and the
具体实施例5Specific Example 5
本发明实施例中,所述的齿电极3具有自相似的结构,输入端与敏感元件的连接,输出端通过导线9连接轴电极7至连接至电路板8,采用对称布置的方式。所述齿电极3利用硬质掩蔽采用金属靶材溅射形成,具有良好的导电性,厚度为500nm。In the embodiment of the present invention, the
具体实施例6Specific Example 6
本发明实施例中,所述的保护层5为Si02涂层,采用磁控溅射工艺均匀制备,厚度5μm。所述的保护层具有良好的耐磨性和密封性,有效避免齿轮啮合时敏感元件的磨损和环境中水汽进入敏感元件中,从而保证齿轮啮合力检测薄膜传感器的性能,同时传感器的使用寿命。In the embodiment of the present invention, the
以上实施例仅用以说明本发明的技术方案而非对其限制,尽管参照上述实施例对本发明进行了详细的说明,所属领域的普通技术人员依然可以对本发明的具体实施方式进行修改或者等同替换,这些未脱离本发明精神和范围的任何修改或者等同替换,均在申请待批的本发明的权利要求保护范围之内。The above embodiments are only used to illustrate the technical solutions of the present invention and not to limit them. Although the present invention has been described in detail with reference to the above embodiments, those of ordinary skill in the art can still modify or equivalently replace the specific embodiments of the present invention. , any modifications or equivalent replacements that do not depart from the spirit and scope of the present invention are all within the protection scope of the claims of the present invention for which the application is pending.
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