CN112968078A - Micro light emitting diode transfer method and display device - Google Patents
Micro light emitting diode transfer method and display device Download PDFInfo
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- CN112968078A CN112968078A CN202010419865.7A CN202010419865A CN112968078A CN 112968078 A CN112968078 A CN 112968078A CN 202010419865 A CN202010419865 A CN 202010419865A CN 112968078 A CN112968078 A CN 112968078A
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- 238000000034 method Methods 0.000 title claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 247
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 83
- 239000003292 glue Substances 0.000 claims abstract description 82
- 239000000853 adhesive Substances 0.000 claims abstract description 39
- 230000001070 adhesive effect Effects 0.000 claims abstract description 39
- 238000000016 photochemical curing Methods 0.000 claims abstract description 28
- 238000001723 curing Methods 0.000 claims abstract description 22
- 239000011248 coating agent Substances 0.000 claims abstract description 15
- 238000000576 coating method Methods 0.000 claims abstract description 15
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 19
- 238000000197 pyrolysis Methods 0.000 claims description 15
- 238000006303 photolysis reaction Methods 0.000 claims description 13
- 230000015843 photosynthesis, light reaction Effects 0.000 claims description 13
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 238000001149 thermolysis Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 abstract description 4
- 230000008569 process Effects 0.000 description 17
- 238000010586 diagram Methods 0.000 description 15
- 239000000463 material Substances 0.000 description 14
- 230000003287 optical effect Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005979 thermal decomposition reaction Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 1
- 238000001935 peptisation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000009283 thermal hydrolysis Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
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Abstract
The invention provides a micro light emitting diode transfer method and a display device, comprising: providing a negative photoresist, and coating the negative photoresist on one side of the growth substrate on which a plurality of micro light-emitting diodes are grown; carrying out photocuring on the negative photoresist between two adjacent micro light-emitting diodes to form photocuring glue; removing the negative photoresist which is not cured on the growth substrate; providing a first temporary storage substrate, and attaching the first temporary storage substrate to one side of the growth substrate on which a plurality of micro light-emitting diodes are grown; stripping the growth substrate; providing a second temporary storage substrate, attaching the second temporary storage substrate to one side of the first temporary storage substrate, which is provided with the micro light-emitting diode, and stripping the first temporary storage substrate; and stripping the light-curing adhesive and transferring the micro light-emitting diode on the second temporary storage substrate to the display back plate. The invention improves the transfer success rate of the micro light-emitting diode by forming the light-cured glue with the functions of blocking and pulling force between two adjacent micro light-emitting diodes.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a micro light emitting diode transfer method and a display device.
Background
In the production process of Micro light emitting diode (Micro LED) display device, the Micro LED chip is outward of the Metal Pad (Metal Pad) after the production substrate is manufactured, so the Micro LED on the growth substrate needs to be transferred to the display back plate. In the transferring process, a glue material with certain thickness and fluidity is needed, and the thickness of the micro light-emitting diode is only a few micrometers, so that the micro light-emitting diode is easily wrapped after glue overflow of the glue material, and the relative position between the micro light-emitting diodes deviates, thereby leading to lower success rate of transferring the micro light-emitting diode.
Therefore, how to increase the transfer success rate of the micro light emitting diode is an urgent problem to be solved.
Disclosure of Invention
The present invention provides a method for transferring micro light emitting diodes and a display device, aiming at solving the problem of low success rate of transferring micro light emitting diodes in the prior art.
The technical scheme adopted by the invention for solving the technical problem is as follows:
a method for transferring micro light emitting diode, comprising:
providing a negative photoresist, and coating the negative photoresist on one side of a growth substrate on which a plurality of micro light-emitting diodes are grown; carrying out photocuring on the negative photoresist between two adjacent micro light-emitting diodes to form a photocuring glue, and adhering the two adjacent micro light-emitting diodes by the photocuring glue; removing the negative photoresist which is not cured on the growth substrate; providing a first temporary storage substrate, and attaching the first temporary storage substrate to one side of the growth substrate on which the micro light-emitting diodes grow; stripping the growth substrate; providing a second temporary storage substrate, attaching the second temporary storage substrate to one side of the first temporary storage substrate, which is provided with the micro light-emitting diode, and stripping the first temporary storage substrate; and stripping the light-curing adhesive and transferring the micro light-emitting diode on the second temporary storage substrate to a display back plate.
The micro light emitting diode transfer method can realize the adhesion of the two adjacent micro light emitting diodes by the light-curing glue through forming the light-curing glue between the two adjacent micro light emitting diodes, and the blocking effect of the light-curing glue is realized between the micro light emitting diodes, so that the glue material can be prevented from overflowing in the transfer process and the micro light emitting diodes can be prevented from being wrapped; moreover, under the action of the pulling force of the light-curing adhesive, the change of the space between the micro light-emitting diodes can not be caused, thereby improving the transfer success rate of the micro light-emitting diodes.
Optionally, the providing a negative photoresist, and applying the negative photoresist to a side of a growth substrate on which a plurality of micro light emitting diodes are grown, includes: and providing a negative photoresist, and uniformly coating the negative photoresist on one side of a growth substrate on which a plurality of micro light-emitting diodes are grown, wherein the coating thickness is greater than the height of the micro light-emitting diodes.
In the implementation process, the negative photoresist is uniformly coated, and the coating thickness is larger than the height of the micro light-emitting diode, so that the micro light-emitting diode can be prevented from being wrapped after the negative photoresist is cured, a supporting layer is formed between the micro light-emitting diodes by the cured negative photoresist, and when the growth substrate is attached to the first temporary storage substrate, the first temporary storage substrate can be supported, and the micro light-emitting diode is prevented from being crushed by the first temporary storage substrate.
Optionally, the photo-curing the negative photoresist between two adjacent micro light-emitting diodes to form a photo-cured photoresist includes: providing an exposure device and a mask plate; arranging the mask plate on one side of the growth substrate with the negative photoresist, wherein the mask plate is transparent to the region between two adjacent micro light-emitting diodes on the growth substrate and is used for shading the rest regions of the growth substrate except the region between the two adjacent micro light-emitting diodes; and carrying out photocuring on the negative photoresist between the two adjacent micro light-emitting diodes by using the exposure equipment to form photocuring glue.
In the implementation process, the light-transmitting area and the light-blocking area are distinguished through the mask, exposure operation is carried out by using exposure equipment, and the curing efficiency and accuracy of the negative photoresist are improved.
Optionally, the removing the non-photocured negative photoresist on the growth substrate includes: and providing a developing solution, and immersing the growth substrate into the developing solution to remove the non-photocured negative photoresist on the growth substrate and keep the photocured photoresist.
In the implementation process, the exposed photoresist is developed through the developing solution, the non-illuminated area is easily removed by the developing solution, and the removal efficiency of the non-photocured negative photoresist on the growth substrate is improved.
Optionally, providing a first temporary storage substrate, attaching the first temporary storage substrate to one side of the growth substrate on which the micro light emitting diodes are grown, includes: providing a first temporary storage substrate coated with photolysis glue or pyrolysis glue, and attaching one surface of the first temporary storage substrate with the photolysis glue or the pyrolysis glue to one side of the growth substrate on which a plurality of micro light-emitting diodes are grown.
In the implementation process, the micro light-emitting diode is transferred to the first temporary storage substrate coated with the photolysis glue or the pyrolysis glue, so that the photolysis glue or the pyrolysis glue is used for facilitating the peptization, and the convenience of subsequently peeling the first temporary storage substrate is further improved.
Optionally, after the peeling the growth substrate, the method further comprises: providing a hydrochloric acid solution, and immersing the first temporary storage substrate into the hydrochloric acid solution to remove the residual gallium on the micro light-emitting diode.
In the implementation process, the residual gallium on the micro light-emitting diode is removed by the hydrochloric acid solution, so that the influence of the gallium on the transfer of the micro light-emitting diode can be effectively reduced, and the accuracy of transferring the micro light-emitting diode from the growth substrate to the first temporary storage substrate is further improved.
Optionally, providing a second temporary storage substrate, attaching the second temporary storage substrate to the side of the first temporary storage substrate having the micro light emitting diode, and peeling off the first temporary storage substrate includes: when the first temporary storage substrate is coated with the photolysis adhesive, providing a second temporary storage substrate with the thermolysis adhesive, and attaching one surface of the second temporary storage substrate with the thermolysis adhesive to one side of the first temporary storage substrate with the micro light-emitting diode; and irradiating the photoresist by using laser with a preset wavelength to strip the first temporary storage substrate.
In the implementation process, by providing the second temporary storage substrate with the thermal decomposition glue, when the micro light-emitting diode is transferred from the first temporary storage substrate to the second temporary storage substrate, the laser with the preset wavelength is used for irradiating the thermal decomposition glue on the first temporary storage substrate, the thermal decomposition glue on the second temporary storage substrate is not affected, and the accuracy of transferring the micro light-emitting diode from the first temporary storage substrate to the second temporary storage substrate is improved.
Optionally, providing a second temporary storage substrate, attaching the second temporary storage substrate to the side of the first temporary storage substrate having the micro light emitting diode, and peeling off the first temporary storage substrate includes: when the first temporary storage substrate is coated with the pyrolytic gel, providing a second temporary storage substrate with the pyrolytic gel, and attaching the surface of the second temporary storage substrate with the pyrolytic gel to the side of the first temporary storage substrate with the micro light-emitting diode; and heating the pyrolytic gel to a preset temperature so as to peel the first temporary storage substrate.
In the implementation process, the second temporary storage substrate with the photolysis adhesive is provided, when the micro light-emitting diode is transferred from the first temporary storage substrate to the second temporary storage substrate, the thermal hydrolysis adhesive on the first temporary storage substrate is heated to the preset temperature, the photolysis adhesive on the second temporary storage substrate is not affected, and the accuracy of transferring the micro light-emitting diode from the first temporary storage substrate to the second temporary storage substrate is improved.
Optionally, the peeling the light-curing adhesive and transferring the micro light-emitting diode on the second temporary storage substrate to a display backplane includes: providing a stripping liquid, and immersing the second temporary storage substrate into the stripping liquid to strip the light-cured adhesive; and transferring the micro light-emitting diode on the second temporary storage substrate to a display back plate.
In the implementation process, the light-cured adhesive is peeled off so as to transfer the micro light-emitting diode to the display back plate.
The invention also provides a display device, which comprises a display backboard and the micro light-emitting diode, wherein the micro light-emitting diode is transferred onto the display backboard by adopting the transfer method.
According to the display device, the micro light-emitting diodes are transferred to the display back plate by adopting the transfer method, the micro light-emitting diodes are not wrapped by the glue material in the transfer process by the transfer method, and the space between the micro light-emitting diodes is kept, so that the yield of the display device is improved.
Drawings
FIG. 1 is a flow chart of a transfer method of a micro light emitting diode according to a preferred embodiment of the present invention.
FIG. 2 is a schematic diagram of the structure of the cut growth substrate and the micro light emitting diode in the preferred embodiment of the transfer method of the invention.
FIG. 3 is a schematic diagram of a structure of a prior art micro LED during a transfer process.
FIG. 4 is a schematic structural diagram of the transfer method of micro light emitting diode according to the present invention after coating a negative photoresist.
FIG. 5 is a schematic view of photocuring in the preferred embodiment of the transfer method of the present invention.
FIG. 6 is a schematic structural diagram of the micro light emitting diode after development process in the preferred embodiment of the transfer method of the present invention.
FIG. 7 is a schematic structural diagram of a first temporary storage substrate coated with photoresist in a preferred embodiment of the transfer method of the present invention.
FIG. 8 is a schematic structural diagram of a first temporary storage substrate coated with thermal release glue in a preferred embodiment of the transfer method of the present invention.
FIG. 9 is a schematic structural diagram of the micro light emitting diode transfer method after the growth substrate is stripped.
FIG. 10 is a schematic structural diagram of the micro light emitting diode transfer method according to the present invention after attaching the second temporary storage substrate with thermal release glue to the first temporary storage substrate.
FIG. 11 is a schematic structural diagram of the micro light emitting diode transfer method after the first temporary storage substrate is peeled off in the preferred embodiment of the invention.
FIG. 12 is a schematic structural diagram of the second temporary storage substrate with thermal release glue after stripping the optical curing glue in the preferred embodiment of the transfer method of the micro light emitting diode of the present invention.
FIG. 13 is a schematic structural diagram of the second temporary storage substrate with photoresist stripped of the optical curing adhesive in the preferred embodiment of the transfer method of the invention for micro light emitting diode.
FIG. 14 is a schematic structural diagram of the transfer method of the micro light emitting diode according to the present invention after the second temporary storage substrate is transferred to the display backplane.
FIG. 15 is a schematic structural diagram of a display device according to a preferred embodiment of the invention.
Description of reference numerals:
10. a growth substrate; 20. a micro light emitting diode; 21. a micro light emitting diode chip; 22. a chip electrode; 30. a negative photoresist; 31. light curing glue; 40. a mask plate; 50. a first temporary storage substrate; 60. performing photolysis; 70. thermally decomposing the glue; 80. a second temporary storage substrate; 90. a display backplane; 91. the backplane electrode is displayed.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer and clearer, the present invention is further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1, fig. 1 is a flow chart of a transfer method of a micro light emitting diode according to the present invention. As shown in fig. 1, the method for transferring a micro led according to the embodiment of the present invention includes the following steps:
s100, providing a negative photoresist, and coating the negative photoresist on one side of a growth substrate on which a plurality of micro light-emitting diodes are grown.
Specifically, as shown in fig. 2, after the Micro light emitting diode 20 fabricated on the growth substrate 10 is cut (Sawing), the Micro light emitting diode 20 on the growth substrate 10 needs to be transferred in the production process of the Micro light emitting diode (Micro LED) display device.
In the conventional transfer method of the micro led 20, as shown in fig. 3, 3 times of transferring the micro led 20 on the growth substrate 10 are required to transfer the micro led 20 to the display backplane, and the first transfer is to transfer the micro led 20 on the growth substrate 10 to the first temporary storage substrate 50; the second transfer is to transfer the micro-leds 20 on the first temporary storage substrate 50 to the second temporary storage substrate 80; the third transfer transfers the micro-leds 20 on the second temporary substrate 80 to the display backplane. In the process of the 3 times of transfer, the pyrolysis glue 60 and the pyrolysis glue 70 are needed to be used, and the two glue materials have certain thickness or fluidity. However, the thickness of the micro-led 20 is only a few microns, so that the micro-led 20 is easily encapsulated by the glue material, for example, the thermal decomposition glue 70 overflows between the micro-leds 20, resulting in a low transfer success rate.
As shown in fig. 4, the present invention first coats a negative photoresist 30 on one side of a growth substrate 10 on which a plurality of micro light emitting diodes 20 are grown, wherein the negative photoresist 30 is curable under light irradiation.
In one implementation, the step S100 specifically includes: providing a negative photoresist 30, and uniformly coating the negative photoresist 30 on one side of the growth substrate 10 where the micro light emitting diodes 20 grow, wherein the coating thickness is greater than the height of the micro light emitting diodes 20. That is, the negative photoresist 30 is uniformly coated to a thickness slightly higher than that of the micro light emitting diode 20. For example, the negative photoresist 30 may be poured on the wafer, and then the wafer is rotated to uniformly coat the photoresist, so as to prevent the negative photoresist 30 from being cured and wrapping the micro light emitting diode 20. Thus, the gaps between the micro light emitting diodes 20 can be filled first, so as to prevent the later used glue material from overflowing to the gaps between the micro light emitting diodes 20 and wrap the micro light emitting diodes 20. The coating thickness is slightly higher than the micro-leds 20, so that the cured negative photoresist 30 forms a support layer between the micro-leds 20, and thus, when the first temporary storage substrate 50 is attached, the first temporary storage substrate 50 can be supported to prevent the micro-leds 20 from being damaged by the first temporary storage substrate 50.
The step S100 is followed by: s200, carrying out photocuring on the negative photoresist between the two adjacent micro light-emitting diodes to form a photocuring glue, and adhering the two adjacent micro light-emitting diodes by the photocuring glue.
In one implementation, as shown in fig. 5, the step S200 specifically includes:
s210, providing an exposure device and a mask 40;
s220, arranging the mask 40 on one side of the growth substrate 10 with the negative photoresist 30, wherein the mask 40 is transparent to the region between two adjacent micro light-emitting diodes 20 on the growth substrate 10, and shields the rest regions of the growth substrate 10 except the region between the two adjacent micro light-emitting diodes 20;
and S230, using the exposure equipment to perform photocuring on the negative photoresist 30 between two adjacent micro light-emitting diodes 20 to form a photocured glue 31.
That is, the coated photoresist is exposed by an exposure apparatus, the mask 40 is set to be transparent in the region where photocuring is required, and to be opaque in the region where photocuring is not required, and the arrow in the figure indicates the direction of light irradiation of the exposure apparatus. The region requiring photo-curing refers to a region between two adjacent micro light emitting diodes 20 on the growth substrate 10, and the region not requiring photo-curing refers to the remaining region on the growth substrate 10, such as the upper end surface of the micro light emitting diodes 20. The negative photoresist 30 on the illuminated area is cured into a light-curing adhesive 31, and the light-curing adhesive adheres two adjacent micro light-emitting diodes 20 together, so that the distance between the two adjacent micro light-emitting diodes 20 is not changed in the transfer process.
The step S200 is followed by: s300, removing the negative photoresist which is not cured on the growth substrate.
In one implementation, the step S300 specifically includes: providing a developing solution, and immersing the growth substrate 10 in the developing solution to remove the non-photocured negative photoresist 30 on the growth substrate 10 and leave the photocured photoresist 31, as shown in fig. 6. That is, the exposed photoresist is developed using a developing solution, and the non-irradiated region is easily removed by the developing solution according to the characteristics of the negative photoresist 30, leaving the photo-cured photoresist, i.e., the photo-cured photoresist 31.
The step S300 is followed by: s400, providing a first temporary storage substrate, and attaching the first temporary storage substrate to one side of the growth substrate on which the micro light-emitting diodes grow.
In one implementation, as shown in fig. 7 and 8, the step S400 specifically includes: providing a first temporary storage substrate 50 coated with a photoresist 60 or a pyrolytic glue 70, and attaching one side of the first temporary storage substrate 50 having the photoresist 60 or the pyrolytic glue 70 to one side of the growth substrate 10 on which the micro light emitting diodes 20 are grown.
That is, the first temporary storage substrate 50 coated with the photoresist 60 or the pyrolytic glue 70 is bonded to the growth substrate 10, i.e., the photoresist 60 or the pyrolytic glue 70 is bonded to the micro light emitting diode 20. The purpose of this bonding is to perform the first transfer. The photolysis glue 60 is subjected to dispergation under laser irradiation with a preset wavelength, and the pyrolysis glue 70 is subjected to dispergation when heated to a preset temperature. During this transfer process, the region of the photo-decomposed glue 60 or the cured photo-decomposed glue 70 can prevent the micro-led 20 from being encapsulated by the overflow glue; and providing a supporting function to prevent the first temporary storage substrate 50 and the growth substrate 10 from generating pressure to crush the micro light emitting diode 20 when they are attached to each other; and providing a pulling force to bond the micro light emitting diodes 20 together, thereby preventing the distance between the micro light emitting diodes 20 from changing during the transfer.
The step S400 is followed by: s500, stripping the growth substrate.
In one implementation, after the step S500, the method further includes: providing a hydrochloric acid solution, and immersing the first temporary storage substrate 50 in the hydrochloric acid solution to remove the gallium metal remaining on the micro light emitting diode 20.
After washing with hydrochloric acid, the residual hydrochloric acid solution on the micro light emitting diode 20 should be neutralized.
Specifically, after the first temporary storage substrate 50 and the growth substrate 10 are bonded together, the growth substrate 10 is peeled Off by using a LASER Lift Off (LLO) technique, and the gallium metal remained on the micro light emitting diode 20 is removed by washing with diluted hydrochloric acid, as shown in fig. 9.
The step S500 is followed by: s600, providing a second temporary storage substrate, attaching the second temporary storage substrate to one side of the first temporary storage substrate, where the micro light-emitting diode is arranged, and stripping the first temporary storage substrate.
Specifically, as shown in fig. 10, the second temporary substrate 80 is made of a blue film, and the blue film plays a supporting role. The first temporary substrate 50 and the second temporary substrate 80 are bonded to prepare for the second transfer.
In an implementation manner, the step S600 specifically includes:
s610a, when the first temporary storage substrate 50 is coated with the pyrolytic glue 60, providing a second temporary storage substrate 80 having the pyrolytic glue 70, and attaching the side of the second temporary storage substrate 80 having the pyrolytic glue 70 to the side of the first temporary storage substrate 50 having the micro led 20;
s620a, irradiating the photoresist 60 with laser with a predetermined wavelength to peel off the first temporary storage substrate 50.
That is, the glue material on the first temporary substrate 50 is different from the glue material on the second temporary substrate 80. If the first temporary storage substrate 50 coated with the photolysis adhesive 60 is used in the step S400, the second temporary storage substrate 80 having the pyrolysis adhesive 70 is attached to the first temporary storage substrate 50, and the side of the second temporary storage substrate 80 having the pyrolysis adhesive 70 is attached to the side of the first temporary storage substrate 50 having the micro-led 20. Thus, when the laser irradiation with the predetermined wavelength is performed on the photoresist 60, the first temporary substrate 50 may be peeled off, as shown in fig. 11, without affecting the second temporary substrate 80.
In one implementation, the predetermined wavelength is 266 nm. That is, after the first temporary storage substrate 50 and the second temporary storage substrate 80 are bonded, the photoresist 60 coating on the first temporary storage substrate 50 is reduced in viscosity under the irradiation of the laser by using the laser with the wavelength of 266nm, and the viscosity of the photoresist 60 is smaller than that of the photoresist 70, so that the first temporary storage substrate 50 and the second temporary storage substrate 80 can be separated, and the micro light emitting diode 20 can be transferred to the second temporary storage substrate 80.
In another implementation manner, the step S600 specifically includes:
s610b, when the thermal release glue 70 is coated on the first temporary storage substrate 50, providing a second temporary storage substrate 80 with the optical release glue 60, and attaching the side of the second temporary storage substrate 80 having the optical release glue 60 to the side of the first temporary storage substrate 50 having the micro-led 20;
s620b, heating the thermal release glue 70 to a predetermined temperature to peel off the first temporary storage substrate 50.
That is, if the first temporary storage substrate 50 coated with the thermal release glue 70 is used in step S400, the second temporary storage substrate 80 having the thermal release glue 60 is attached to the first temporary storage substrate 50, and the side of the second temporary storage substrate 80 having the thermal release glue 60 is attached to the side of the first temporary storage substrate 50 having the micro-leds 20. Thus, when the thermal release adhesive 70 is heated to a predetermined temperature, the first temporary substrate 50 can be peeled without affecting the second temporary substrate 80.
Therefore, when the micro light emitting diodes 20 are transferred for the first time and the second time, the tension of the optical adhesive 31 is applied between the micro light emitting diodes 20, so that the distance between the micro light emitting diodes 20 is not changed, and the micro light emitting diodes 20 can be prevented from being transferred incompletely or being trapped in the adhesive material to cause transfer failure. Moreover, the micro light emitting diodes 20 have the blocking function of the light curing glue 31, so that the micro light emitting diodes 20 can be prevented from being wrapped by glue overflow of the part of the pyrolysis glue 60 or the pyrolysis glue 70, or the transfer failure caused by mixing of the pyrolysis glue 60 and the pyrolysis glue 70 can be prevented.
The step S600 is followed by: s700, stripping the light-curing adhesive, and transferring the micro light-emitting diode 20 on the second temporary storage substrate to a display back plate.
In one implementation, the step S700 specifically includes:
s710, providing a stripping solution, and immersing the second temporary storage substrate 80 into the stripping solution to strip the light-curing adhesive 31;
s720, transferring the micro light emitting diode 20 on the second temporary substrate 80 to a display back plate 90.
That is, the second temporary substrate 80 after the transfer is stripped of the optical curing adhesive 31, as shown in fig. 12 and 13, fig. 12 is a schematic structural diagram of the second temporary substrate with thermal release adhesive after the optical curing adhesive is stripped, and fig. 13 is a schematic structural diagram of the second temporary substrate with thermal release adhesive after the optical curing adhesive is stripped. The peeled second temporary substrate 80 is transferred to the display backplane 90, as shown in fig. 14. When the photoresist 60 is disposed on the second temporary storage substrate 80, the micro light emitting diode 20 thereon can be selectively transferred by a laser stripper, which is more practical and lower in cost.
In one implementation, the step S720 includes:
s721, the second temporary storage substrate 80 and the display back plate 90 are aligned and bonded. Wherein, there is a display back plate electrode 91 on the display back plate 90, the micro light emitting diode 20 includes a micro light emitting diode chip 21 and a chip electrode 22 disposed on the micro light emitting diode chip 21, the display back plate electrode 91 is electrically connected to the chip electrode 22.
S722, the micro light emitting diode 20 is laser bonded or thermally bonded to the display backplane 90. The binding mode is selected according to the type of the glue material on the second temporary storage substrate 80, and if the glue material on the second temporary storage substrate 80 is the pyrolytic glue 70, the laser binding mode is selected; if the glue material on the second temporary substrate 80 is photolyzed glue 60, a thermal bonding method is selected. In this way, the second temporary storage substrate 80 is prevented from being affected at the time of binding.
S723, debonding the photoresist 60 or the pyrolytic glue 70 on the second temporary storage substrate 80 to peel off the second temporary storage substrate 80.
The invention also provides a display device, as shown in fig. 15, the display device includes a display back plate 90 and a micro light emitting diode 20, and the micro light emitting diode 20 is transferred onto the display back plate 90 by the transfer method as described above.
Further, a display back plate electrode 91 is disposed on the display back plate 90, the micro light emitting diode 20 includes a micro light emitting diode chip 21 and a chip electrode 22 disposed on the micro light emitting diode chip 21, and the display back plate electrode 91 is electrically connected to the chip electrode 22.
In summary, the present invention discloses a micro led transferring method and a display device, including: providing a negative photoresist, and coating the negative photoresist on one side of a growth substrate on which a plurality of micro light-emitting diodes are grown; carrying out photocuring on the negative photoresist between two adjacent micro light-emitting diodes to form a photocuring glue, and adhering the two adjacent micro light-emitting diodes by the photocuring glue; removing the negative photoresist which is not cured on the growth substrate; providing a first temporary storage substrate, and attaching the first temporary storage substrate to one side of the growth substrate on which the micro light-emitting diodes grow; stripping the growth substrate; providing a second temporary storage substrate, attaching the second temporary storage substrate to one side of the first temporary storage substrate, which is provided with the micro light-emitting diode, and stripping the first temporary storage substrate; and stripping the light-curing adhesive and transferring the micro light-emitting diode on the second temporary storage substrate to a display back plate. The invention forms the light-cured adhesive between two adjacent micro light-emitting diodes, so that the micro light-emitting diodes have the blocking function of the light-cured adhesive, and can block the adhesive material from overflowing in the transferring process and wrap the micro light-emitting diodes; moreover, under the action of the pulling force of the light-curing adhesive, the change of the space between the micro light-emitting diodes can not be caused, thereby improving the transfer success rate of the micro light-emitting diodes.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (10)
1. A method for transferring micro light emitting diode includes:
providing a negative photoresist, and coating the negative photoresist on one side of a growth substrate on which a plurality of micro light-emitting diodes are grown;
carrying out photocuring on the negative photoresist between two adjacent micro light-emitting diodes to form a photocuring glue, and adhering the two adjacent micro light-emitting diodes by the photocuring glue;
removing the negative photoresist which is not cured on the growth substrate;
providing a first temporary storage substrate, and attaching the first temporary storage substrate to one side of the growth substrate on which the micro light-emitting diodes grow;
stripping the growth substrate;
providing a second temporary storage substrate, attaching the second temporary storage substrate to one side of the first temporary storage substrate, which is provided with the micro light-emitting diode, and stripping the first temporary storage substrate;
and stripping the light-curing adhesive and transferring the micro light-emitting diode on the second temporary storage substrate to a display back plate.
2. The method of claim 1, wherein providing a negative photoresist and applying the negative photoresist to a side of a growth substrate on which a plurality of micro light emitting diodes are grown comprises:
and providing a negative photoresist, and uniformly coating the negative photoresist on one side of a growth substrate on which a plurality of micro light-emitting diodes are grown, wherein the coating thickness is greater than the height of the micro light-emitting diodes.
3. The method as claimed in claim 1, wherein the photo-curing the negative photoresist between two adjacent micro-leds to form a photo-curing glue comprises:
providing an exposure device and a mask plate;
arranging the mask plate on one side of the growth substrate with the negative photoresist, wherein the mask plate is transparent to the region between two adjacent micro light-emitting diodes on the growth substrate and is used for shading the rest regions of the growth substrate except the region between the two adjacent micro light-emitting diodes;
and carrying out photocuring on the negative photoresist between the two adjacent micro light-emitting diodes by using the exposure equipment to form photocuring glue.
4. The method as claimed in claim 1, wherein the removing the non-photo-cured negative photoresist on the growth substrate comprises:
and providing a developing solution, and immersing the growth substrate into the developing solution to remove the non-photocured negative photoresist on the growth substrate and keep the photocured photoresist.
5. The method as claimed in claim 1, wherein the step of providing a first temporary storage substrate and attaching the first temporary storage substrate to the side of the growth substrate where the micro-leds are grown comprises:
providing a first temporary storage substrate coated with photolysis glue or pyrolysis glue, and attaching one surface of the first temporary storage substrate with the photolysis glue or the pyrolysis glue to one side of the growth substrate on which a plurality of micro light-emitting diodes are grown.
6. The method of claim 1, wherein after said peeling said growth substrate, said method further comprises:
providing a hydrochloric acid solution, and immersing the first temporary storage substrate into the hydrochloric acid solution to remove the residual gallium on the micro light-emitting diode.
7. The method as claimed in claim 5, wherein the step of providing a second temporary storage substrate, attaching the second temporary storage substrate to the side of the first temporary storage substrate having the micro light emitting diodes thereon, and peeling off the first temporary storage substrate comprises:
when the first temporary storage substrate is coated with the photolysis adhesive, providing a second temporary storage substrate with the thermolysis adhesive, and attaching one surface of the second temporary storage substrate with the thermolysis adhesive to one side of the first temporary storage substrate with the micro light-emitting diode;
and irradiating the photoresist by using laser with a preset wavelength to strip the first temporary storage substrate.
8. The method as claimed in claim 5, wherein the step of providing a second temporary storage substrate, attaching the second temporary storage substrate to the side of the first temporary storage substrate where the micro LED is located, and peeling off the first temporary storage substrate comprises:
when the first temporary storage substrate is coated with the pyrolytic gel, providing a second temporary storage substrate with the pyrolytic gel, and attaching the surface of the second temporary storage substrate with the pyrolytic gel to the side of the first temporary storage substrate with the micro light-emitting diode;
and heating the pyrolytic gel to a preset temperature so as to peel the first temporary storage substrate.
9. The method as claimed in claim 1, wherein the step of peeling off the photo-curing adhesive and transferring the micro light emitting diode on the second temporary storage substrate to a display backplane comprises:
providing a stripping liquid, and immersing the second temporary storage substrate into the stripping liquid to strip the light-cured adhesive;
and transferring the micro light-emitting diode on the second temporary storage substrate to a display back plate.
10. A display device comprising a display backplane and micro-leds, said micro-leds being transferred onto said display backplane using the transfer method of any of claims 1-9.
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| CN111063649A (en) * | 2019-12-03 | 2020-04-24 | 深圳市华星光电半导体显示技术有限公司 | Micro LED transferring method and transferring device |
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| US20130285086A1 (en) * | 2012-04-27 | 2013-10-31 | Hsin-Hua Hu | Method of forming a micro led device with self-aligned metallization stack |
| CN107464859A (en) * | 2016-06-03 | 2017-12-12 | 光宝光电(常州)有限公司 | Light emitting diode construction, component and its manufacture method |
| WO2019079046A1 (en) * | 2017-10-20 | 2019-04-25 | Facebook Technologies, Llc | Elastomeric layer fabrication for light emitting diodes |
| CN110828364A (en) * | 2019-11-20 | 2020-02-21 | 广东省半导体产业技术研究院 | Mass transfer method, manufacturing method of display device and display device |
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