CN112967948B - Gallium metal removing device and gallium metal removing method - Google Patents
Gallium metal removing device and gallium metal removing method Download PDFInfo
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- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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Abstract
The invention relates to a metal gallium removing device and a metal gallium removing method. The metal gallium removing device comprises a rotating unit, an adsorption unit and a heating unit; the adsorption unit is connected with the rotating unit and is driven by the rotating unit to rotate, and the adsorption unit is used for adsorbing a transient substrate; the surface of one side of the transient substrate, which is far away from the adsorption unit, is adhered with a light-emitting device; the heating unit is used for heating the adsorption unit; after the heating unit heats the adsorption unit, the temperature of the surface of the light-emitting device is greater than or equal to the liquefaction temperature of the gallium metal. By using the device, residual gallium on the surface of the light-emitting device after laser stripping can be effectively removed on the basis of not corroding the light-emitting device.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a gallium metal removing device and a gallium metal removing method.
Background
As a new generation Display technology, Micro LEDs (Micro Light Emitting diodes) have higher brightness, better Light Emitting efficiency, and simultaneously have low power consumption and long life compared with LCD (Liquid Crystal Display) and OLED (Organic Light Emitting Diode) technologies. In the process of the preparation process of the micro light-emitting diode, the mass transfer is taken as a key point of technical breakthrough, the process mainly comprises the processes of laser lift-off, mass transfer and detection and repair, wherein the laser lift-off technology is the key point of the technical breakthrough of the mass transfer.
The laser lift-off technique mainly utilizes gallium nitride (GaN) epitaxial layer and sapphire (Al)2O3) The band gap difference of the substrate (also called growth substrate) adopts the photon energy which is larger than the band gap of gallium nitride and smaller than sapphireUltraviolet laser radiation of the stone band gap enables gallium nitride to be thermally decomposed at 900-1000 ℃ to form metal gallium and nitrogen, and therefore the Micro LED and the sapphire substrate are separated. The separated Micro LED is adhered to the transient substrate through the adhesive layer, and finally the Micro LED is transferred to the target substrate through the transient substrate. However, the Micro LED surface adhered to the transient substrate after laser lift-off tends to have a large amount of gallium (Ga) residue.
For gallium residues, the most adopted removing method at present is acid washing, however, when the residual gallium on the surface of the Micro LED is removed by acid washing, the residual gallium is corroded, and the effect of removing the residual gallium is not ideal. For this reason, how to remove the residual gallium on the surface of the Micro LED more effectively without corroding the Micro LED becomes a key part of the laser lift-off technology.
Disclosure of Invention
In view of the above disadvantages of the prior art, an object of the present application is to provide a device and a method for removing gallium metal, which are used to solve the problem in the prior art that residual gallium on the surface of a light emitting device after laser lift-off cannot be effectively removed.
A metal gallium removing device comprises a rotating unit, an adsorption unit and a heating unit; the adsorption unit is connected with the rotating unit and driven by the rotating unit to rotate, and the adsorption unit is used for adsorbing a transient substrate; the surface of one side of the transient substrate, which is far away from the adsorption unit, is adhered with a light-emitting device; the heating unit is used for heating the adsorption unit; after the heating unit heats the adsorption unit, the temperature of the surface of the light-emitting device is greater than or equal to the liquefaction temperature of the gallium metal.
When the device is used for treating the transient substrate adhered with the light-emitting device after laser stripping, the adsorption unit is utilized to adsorb the transient substrate, the transient substrate is contacted and fixed with the adsorption unit, and the light-emitting device deviates from the adsorption unit. Because the liquefaction temperature of gallium is lower, about 30 ℃, after the heating unit heats the adsorption unit, residual gallium on the surface of the light-emitting device can be easily heated to the liquefaction temperature in the forms of heat conduction and heat radiation. And then the rotary unit is used for driving the adsorption unit to rotate, so that the liquefied residual gallium can be thrown off from the surface of the light-emitting device under the action of rotary centrifugal force.
Therefore, the metal gallium removing device provided by the invention can effectively remove the residual gallium on the surface of the light-emitting device after laser stripping, simultaneously avoids corrosion to the light-emitting device, and is an efficient, green and safe residual gallium removing device.
Optionally, the adsorption unit comprises an adsorption substrate and an adsorption part, and the adsorption substrate is fixedly connected with the rotation unit; the adsorption part is arranged on one side surface of the adsorption substrate, which is far away from the rotating unit, and the adsorption part is used for adsorbing the transient substrate. In the actual operation process, the transient substrate can be stably adsorbed and fixed through the adsorption part, and the adsorption substrate is driven by the rotating unit to rotate, so that the liquefied gallium is separated under the action of centrifugal force.
Optionally, the heating means of the heating unit comprises electrode heating or water bath heating. The electrode heating unit and the water bath heating unit can be used for conveniently and sufficiently heating the adsorption unit, and then residual gallium is more sufficiently liquefied through the action of heat conduction and heat radiation.
Optionally, when the heating unit is heated in a water bath manner, the heating unit comprises a liquid storage unit, a liquid conveying pipeline and a temperature control unit; the liquid storage unit is used for storing and providing liquid; one end of the liquid conveying pipeline is communicated with the liquid storage unit, and the other end of the liquid conveying pipeline is communicated with the inside of the adsorption unit; the temperature control unit is arranged in the liquid conveying pipeline and is used for controlling the temperature of the liquid transmitted to the adsorption unit through the liquid conveying pipeline. Therefore, after the liquid storage unit supplies liquid to the liquid conveying pipeline, the temperature control unit heats and controls the temperature of the liquid, hot liquid enters the adsorption unit, the adsorption unit is heated in a heat conduction mode, the adsorbed transient substrate is further heated, and residual gallium on the surface of the light-emitting device is liquefied. Through the heating unit that adopts the water bath mode to heat, the temperature is controlled more easily, and the liquefaction of the surperficial residual gallium of luminescent device is more abundant, also is favorable to avoiding heating the high temperature. Here, the liquid in the liquid storage unit of the heating unit may be used as a heating liquid medium, for example, water, alcohols, esters, etc., or may be waste water, waste liquid, etc. in a semiconductor process, as long as the boiling point of the components is higher than the liquefaction temperature of the metal gallium.
Optionally, a transfusion channel is arranged inside the adsorption substrate, and the transfusion channel is communicated with the transfusion pipeline. Like this, the liquid of stock solution unit can directly get into the inside infusion runner of adsorption substrate after the heating accuse temperature for carry out the water bath heating to it, and have the more abundant even, the more efficient advantage of heating, have more efficient heating effect to the remaining gallium on luminescent device surface.
Optionally, the apparatus further comprises an inert gas supply unit and/or a vacuum pumping unit, wherein the inert gas supply unit is used for enabling the adsorption unit to be in an inert gas environment; the vacuumizing unit is used for enabling the adsorption unit to be in a vacuum environment. Under inert gas or vacuum environment, residual liquefied gallium can be effectively prevented from being oxidized, so that the liquefied gallium can be better separated from the light-emitting device.
Based on the same inventive concept, the application also provides a metal gallium removing method, which is based on a metal gallium removing device, wherein the device comprises a rotating unit, an adsorption unit and a heating unit; the method comprises the following steps: controlling the adsorption unit to adsorb a transient substrate; the surface of one side of the transient substrate, which is far away from the adsorption unit, is adhered with a light-emitting device; controlling the heating unit to heat the adsorption unit so that the temperature of the surface of the light-emitting device is greater than or equal to the temperature of liquefaction of the gallium metal; the rotating unit is controlled to drive the adsorption unit to rotate, so that the liquefied gallium is separated from the light-emitting device under the action of rotating centrifugal force.
In the method, the transient substrate adhered with the light-emitting device is fixed on the adsorption unit, the transient substrate is adsorbed in the process, and the light-emitting device is far away from the adsorption unit. Next, after the heating unit heats the adsorption unit, the gallium metal remaining on the surface of the light emitting device can be heated and liquefied by means of heat conduction and heat radiation. Finally, the adsorption unit is driven to rotate by the rotation unit, so that the liquefied gallium can be separated from the surface of the light-emitting device under the action of a rotating centrifugal force, and the purpose of removing residual gallium after laser stripping is achieved. In conclusion, residual gallium on the surface of the light-emitting device after laser stripping can be effectively removed by the method on the basis of not corroding the light-emitting device.
Optionally, the heating means of the heating unit comprises electrode heating or water bath heating. The adsorption unit can be conveniently and sufficiently heated by using an electrode heating or water bath heating mode, so that residual gallium can be more sufficiently liquefied, and the residual gallium can be more sufficiently separated from the light-emitting device under the action of rotary centrifugal force.
Optionally, when the heating unit is heated in a water bath manner, the heating unit comprises a liquid storage unit, a liquid conveying pipeline and a temperature control unit;
the heating process comprises: the liquid in the liquid storage unit is transmitted to the adsorption unit through the liquid conveying pipeline, and the temperature of the liquid is controlled through the temperature control unit. Therefore, after the liquid storage unit supplies liquid to the liquid conveying pipeline, the temperature control unit heats and controls the temperature of the liquid, hot liquid enters the adsorption unit, the adsorption unit is heated in a heat conduction mode, and the adsorbed substrate is further heated, so that residual gallium on the surface of the light-emitting device is liquefied. Through above-mentioned heating unit, the temperature is controlled more easily, and the liquefaction of the remaining gallium on emitting device surface is more abundant, also is favorable to avoiding the heating temperature too high.
Optionally, the steps of heating the adsorption unit and controlling the adsorption unit to rotate are performed in an inert gas and/or vacuum environment. This is advantageous to avoid oxidation of the liquefied residual gallium so that the liquefied gallium can be better separated from the light emitting device.
Drawings
FIG. 1 is a schematic structural diagram of a gallium metal removal device according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a temperature control unit in a gallium metal removing apparatus according to an embodiment of the invention.
Description of reference numerals:
10-a rotation unit; 20-an adsorption unit; 30-a heating unit; 40-shell
11-a rotating shaft; 12-a drive unit;
21-an adsorption substrate; 22-an adsorption part;
31-a liquid storage unit; 32-a transfusion tube; 33-a temperature control unit;
331-an electrical heating section; 332-temperature sensor; 333-flow sensor; 334-solenoid valve.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are given in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
As described in the background section, the residual gallium on the surface of the LED chip after laser lift-off in the prior art cannot be removed effectively.
Based on this, the present application intends to provide a solution to the above technical problem, the details of which will be explained in the following embodiments.
As shown in fig. 1, there is provided a metal gallium removing apparatus, which includes a rotating unit 10, an adsorption unit 20, and a heating unit 30; the adsorption unit 20 is connected with the rotation unit 10 and is driven by the rotation unit 10 to rotate, and the adsorption unit 20 is used for adsorbing a transient substrate; wherein, a light emitting device is adhered to the surface of one side of the transient substrate, which is far away from the adsorption unit 20; the heating unit 30 is used for heating the adsorption unit 20; after the heating unit 30 heats the adsorption unit 20, the temperature of the surface of the light emitting device is greater than or equal to the liquefaction temperature of the gallium metal.
When the device is used for treating the transient substrate adhered with the light-emitting device after laser stripping, the adsorption unit 20 is utilized to adsorb the transient substrate, the transient substrate is contacted and fixed with the adsorption unit 20, and the light-emitting device deviates from the adsorption unit 20. Since the liquefaction temperature of gallium is low, about 30 ℃, after the adsorption unit 20 is heated by the heating unit 30, the residual gallium on the surface of the light emitting device can be easily heated to the liquefaction temperature in the forms of heat conduction and heat radiation. And then the rotary unit 10 is used for driving the adsorption unit 20 to rotate, so that the liquefied residual gallium can be thrown off from the surface of the light-emitting device under the action of the rotary centrifugal force.
Therefore, the metal gallium removing device provided by the invention can effectively remove the residual gallium on the surface of the light-emitting device after laser stripping, simultaneously avoids corrosion to the light-emitting device, and is an efficient, green and safe residual gallium removing device.
The adsorption unit 20 may be configured to adsorb and fix the transient substrate and rotate the transient substrate under the driving of the rotation unit 10. In order to liquefy the residual gallium on the surface of the light emitting structure more sufficiently and absorb the transient substrate more stably, in some embodiments, as shown in fig. 1, the absorption unit 20 includes an absorption substrate 21 and an absorption portion 22, and the absorption substrate 21 is fixedly connected to the rotating unit 10; the adsorption part 22 is disposed on a surface of the adsorption substrate 21 facing away from the rotation unit 10, and the adsorption part 22 is used for adsorbing the transient substrate. In the actual operation process, the transient substrate can be stably adsorbed and fixed by the adsorption part 22, and the adsorption substrate 21 is driven by the rotation unit to rotate, so that the liquefied gallium is separated under the action of centrifugal force. And by using the adsorption substrate 21, after the heating unit 30 heats the light emitting device, the residual gallium on the surface of the light emitting device can be liquefied more sufficiently by more sufficient heat conduction and heat radiation due to the larger area, so that the detachment effect of the residual gallium is further improved. In some embodiments, the absorption portion 22 is a plurality of vacuum absorption heads, which can absorb the transient substrate by vacuum absorption to fix the transient substrate to the light emitting device adhered on the surface.
The purpose of the rotating unit 10 is to rotate the adsorption unit 20, and provide a rotating centrifugal force for the detachment of the liquefied gallium. Illustratively, as shown in fig. 1, the rotating unit 10 includes a rotating shaft 11 and a driving unit 12, one end of the rotating shaft 11 is fixedly connected to the adsorption substrate 21, and the other end is connected to the driving unit 12, and the driving unit 12 is configured to drive the rotating shaft 11 to rotate. The specific arrangement mode can be adjusted as long as the purpose of driving the adsorption substrate 21 to rotate can be achieved. For example, the rotary shaft 11 may have an upper end and a lower end, and the adsorption substrate 21 is fixedly coupled to the lower end of the rotary shaft 11. It can be understood that the driving unit 12 includes a power device and a transmission unit, the power device is connected to the rotating shaft 11 through the transmission unit, and is used for driving the rotating shaft 11 to rotate, and accordingly, the adsorbing substrate 21 is rotated. The specific driving unit may be a gear driving device, by which the rotation speed of the rotation shaft 11 and the adsorption substrate 21 is precisely controlled, and centrifugal force is provided to detach the liquefied gallium from the surface of the wafer. In some embodiments, as shown in fig. 1, an adsorption substrate 21 is fixedly connected to the lower end of the rotating shaft 11, and an adsorption part 22 is disposed on the lower surface of the adsorption substrate 21, in order to more easily throw off the residual gallium metal to detach the gallium metal from the wafer. In the actual operation process, the transient substrate is adsorbed by the adsorbing portion 22, the light emitting device adhered on the transient substrate faces downward away from the adsorbing substrate 21, the whole wafer is in an inverted state of "transient substrate up and light emitting device down", and the surface of the light emitting device with gallium remaining is at the lowest end. Therefore, the residual gallium liquefied by heating is more easily thrown out under the action of gravity and rotating centrifugal force and is separated from the light-emitting device.
The heating manner of the heating unit 30 includes electrode heating or water bath heating. The adsorption unit can be conveniently and sufficiently heated by using an electrode heating mode or a water bath heating mode in the actual operation process, and then the residual gallium is more sufficiently liquefied through the heat conduction and heat radiation effects.
For example, when the electrode heating method is adopted for heating, a resistance wire may be disposed on the surface or inside the adsorption substrate 21, and by conducting the resistance wire with an external power supply, the hot resistance wire heats the adsorption substrate 21; in addition, the heating electrode may be inserted into the adsorption substrate 21 to heat the adsorption substrate, and the method is various and will not be described herein.
In order to further improve the heating efficiency and make the heating process more uniform, in some embodiments, as shown in fig. 2, the heating unit 30 is heated by a water bath, and includes a liquid storage unit 31, an infusion tube 32 and a temperature control unit 33; the liquid storage unit 31 is used for storing and providing liquid; one end of the liquid conveying pipeline 32 is communicated with the liquid storage unit 31, and the other end is communicated with the interior of the adsorption unit 20; a temperature control unit 33 is provided in the liquid feeding pipe 32 for controlling the temperature of the liquid transferred to the adsorption unit 20 through the liquid feeding pipe 32. In actual operation, water is introduced into the rotary adsorption unit 20 through the liquid delivery pipe 32, and the temperature of the water is controlled by the temperature control unit 33 during the introduction.
Thus, after the liquid is supplied to the liquid conveying pipeline 32 by the liquid storage unit 31, the temperature of the liquid is heated and controlled by the temperature control unit 33, the hot liquid enters the adsorption unit, the adsorption unit 20 is heated in a heat conduction mode, and the adsorbed transient substrate is further heated, so that the residual gallium on the surface of the light-emitting device is liquefied. Through above-mentioned water bath heating unit, the temperature is controlled more easily, and the liquefaction of the remaining gallium on luminescent device surface is more abundant, also is favorable to avoiding the heating temperature too high. Here, the liquid in the storage unit 31 of the heating unit 30 may be a heating liquid medium, for example, water, alcohols, esters, etc., or may be waste water, waste liquid, etc. in a semiconductor process, as long as the boiling point of the components is higher than the liquefaction temperature of the metal gallium.
Illustratively, as shown in fig. 2, a liquid supply channel is provided inside the adsorption substrate 21, and the liquid supply channel communicates with the liquid supply pipe 32. Like this, the liquid of stock solution unit 31 can directly get into the inside infusion runner of adsorption substrate 21 after the heating accuse temperature for carry out water bath heating to it, and have the more abundant even, the more efficient advantage of heating, have more efficient heating effect to the remaining gallium on luminescent device surface.
In order to ensure that the water bath heating process is more sufficient and uniform, the infusion flow channel comprises a plurality of flow sections which are mutually communicated, and the distance between two adjacent flow sections is less than 1 mm. Illustratively, as shown in fig. 2, a plurality of U-shaped grooves connected in sequence may be formed on the back surface of the adsorption substrate 21, and the grooves may be distributed on the back surface of the whole adsorption substrate 21 as much as possible, and pipes may be inserted into the grooves to form a plurality of U-shaped distributed backside liquid circulation pipes, and the distance between adjacent pipes is less than 1mm, so as to heat the adsorption substrate 21 more sufficiently and correspondingly heat the residual gallium. The infusion flow channel may have other structures, such as an S-shape, a ring shape, a zigzag shape, etc., as long as the piping is distributed sufficiently as far as possible, which can be understood by those skilled in the art.
Illustratively, the rotating shaft 11 is a hollow structure, and the infusion tube 32 is communicated with the infusion flow passage in the adsorption substrate 21 through the hollow rotating shaft 11. Thus, when the rotation shaft 11 rotates the adsorption substrate 21, the entire heating unit 30 is not rotated, which can be understood by those skilled in the art.
Illustratively, as shown in fig. 2, the temperature control unit 33 includes an electric heating unit 331, a temperature sensor 332, a flow sensor 333 and an electromagnetic valve 334, which are sequentially disposed on the liquid conveying pipe 32, wherein the temperature sensor 332 is used for monitoring the temperature of the liquid in the pipeline and controlling the heating state of the electric heating unit 331, and the flow sensor 333 is used for monitoring the flow rate of the liquid in the pipeline and controlling the opening degree of the electromagnetic valve 334, so as to achieve automatic adjustment of the flow rate and the temperature of the liquid in the pipeline. It will be appreciated that the apparatus described above also includes a hydronic power plant for providing hydronic power, such as a circulation pump or the like. In some embodiments, the electrical heating portion 331 is a resistance wire heating portion, which includes a resistance wire, an external power source, an electrical wire, etc. connected to the resistance wire, and the resistance wire generates heat after being energized to heat the liquid in the infusion tube 32.
In some embodiments, the apparatus further includes an inert gas supply unit for supplying an inert gas to place the adsorption unit 20 in an inert gas atmosphere and/or an evacuation unit; the evacuation unit is used for evacuating the adsorption unit 20 in a vacuum environment. Therefore, under the inert environment and the vacuum environment, the oxidation of residual gallium after heating and liquefying is effectively avoided, so that the residual gallium can be better separated from the light-emitting device.
In order to make the operation more convenient, the inert gas environment and the vacuum environment more sufficiently safe, in some embodiments, as shown in fig. 1, the above-mentioned metal gallium removing apparatus further comprises a housing 40, wherein the rotating unit 10 and the adsorption unit 20 are located inside the housing 40,the inert gas supply unit and/or the vacuum unit are located outside the housing 40 and connected to an inner cavity of the housing 40 for supplying inert gas thereto or vacuum-pumping the same. The inert gas may be nitrogen, argon, etc., and the vacuum degree in the evacuated housing 40 may be 10-1～10-3Pa. The heating unit 30 may be located inside or outside the casing 40 as long as the adsorption unit 20 can be heated.
In addition, a method for removing metal gallium is provided, which is based on the above-mentioned gallium removing device, as shown in fig. 1 and 2, the device comprises a rotating unit 10, an adsorption unit 20 and a heating unit 30; the method comprises the following steps: controlling the adsorption unit 20 to adsorb a transient substrate; wherein, a light emitting device is adhered to the surface of one side of the transient substrate, which is far away from the adsorption unit 20; controlling the heating unit 30 to heat the adsorption unit 20 so that the temperature of the surface of the light-emitting device is greater than or equal to the temperature of liquefaction of the gallium metal; the rotating unit 10 is controlled to drive the adsorption unit 20 to rotate, so that the liquefied gallium is separated from the light-emitting device under the action of the rotating centrifugal force.
In the above method, the transient substrate adhered with the light emitting device is fixed on the adsorption unit 20, and the transient substrate is adsorbed in the process, and the light emitting device is far away from the adsorption unit 20. Next, after the heating unit 30 heats the adsorption unit 20, the gallium metal remaining on the surface of the light emitting device can be liquefied by heating through heat conduction and heat radiation. Finally, the adsorption unit 20 is driven to rotate by the rotation unit 10, so that the liquefied gallium can be separated from the surface of the light-emitting device under the action of a rotating centrifugal force, and the purpose of removing residual gallium after laser stripping is achieved. In conclusion, residual gallium on the surface of the light-emitting device after laser stripping can be effectively removed by the method on the basis of not corroding the light-emitting device.
For example, in the specific implementation process, after the heating unit 30 heats the adsorption unit 20, the heating temperature of the adsorption unit 20 is greater than or equal to 30 ℃, for example, the adsorption unit 20 may be heated to 30-50 ℃, specifically, 30 ℃, 35 ℃, 40 ℃, 45 ℃, 50 ℃, and the like. Therefore, the residual gallium can be liquefied sufficiently and is convenient to be separated from the surface of the light-emitting device sufficiently.
In an exemplary implementation process, the rotation speed of the rotation unit 10 is low speed rotation, and the rotation speed is less than 8000r/min, for example, 3000 to 7500r/min, specifically 3000r/min, 3500r/min, 4000r/min, 4500r/min, 5000r/min, 5500r/min, 6000r/min, 6500r/min, 7000r/min, and the like, so that the liquefied gallium is more sufficiently separated from the surface of the light emitting device while the rotation is stabilized. Meanwhile, the throwing direction of the residual gallium liquid drops is inclined downwards, and the pollution to the adsorption unit 20 is also avoided. In some embodiments, the rotation direction of the rotating unit 10 may be counterclockwise rotation or clockwise rotation.
In practice, the transient substrate used may be of a type commonly used in the art, such as a sapphire substrate, a glass substrate, a quartz substrate, etc. The Light Emitting device may be a conventional Light Emitting device in the art, for example, the Light Emitting device includes a Micro LED, an LED (Light Emitting Diode), an OLED, and the like, and the Light Emitting device and the method may be removed by using the apparatus as long as gallium remains on the surface of the Light Emitting device.
In some embodiments, as shown in fig. 1, the adsorption unit 20 includes an adsorption substrate 21 and an adsorption part 22, and the step of controlling the adsorption unit 20 to adsorb a transient substrate includes: the transient substrate is adsorbed and fixed to the surface of the adsorption substrate 21 by the adsorption portion 22. Thus, the adsorption substrate 21 is rotated by the rotation unit 10, and the liquefied gallium is separated by the centrifugal force. And by using the adsorption substrate 21, after the heating unit 30 heats the light emitting device, the residual gallium on the surface of the light emitting device can be liquefied more sufficiently by more sufficient heat conduction and heat radiation due to the larger area, so that the detachment effect of the residual gallium is further improved. In some embodiments, the absorption portion 22 is a plurality of vacuum absorption heads, which can absorb the transient substrate by vacuum absorption to fix the transient substrate to the light emitting device adhered on the surface.
In some embodiments, the rotating unit 10 includes a rotating shaft 11 and a driving unit 12, and the step of controlling the rotating unit 10 to rotate the adsorbing unit 20 includes: one end of the rotary shaft 11 is fixedly connected to the adsorption substrate 21, and the other end is connected to the driving unit 12, and the rotary shaft 11 is driven by the driving unit 12 to rotate, thereby rotating the adsorption substrate 21.
Exemplary ways of heating unit 30 include electrode heating or water bath heating. The adsorption unit can be conveniently and sufficiently heated by using an electrode heating mode or a water bath heating mode in the actual operation process, and then the residual gallium is more sufficiently liquefied through the heat conduction and heat radiation effects.
For example, when electrode heating is adopted, a resistance wire may be disposed on the surface or inside the adsorption substrate 21, and by conducting the resistance wire with an external power supply, the hot resistance wire heats the adsorption substrate 21; in addition, the heating electrode may be inserted into the adsorption substrate 21 to heat the adsorption substrate, and the method is various and will not be described herein.
In order to further improve the heating efficiency and make the heating process more uniform, in some embodiments, as shown in fig. 2, the heating unit 30 is heated by water bath, and the heating unit 30 may include a liquid storage unit 31, an infusion tube 32 and a temperature control unit 33, and the heating process includes: the liquid in the liquid storage unit 31 is transferred to the adsorption unit 20 through the liquid transfer pipe 32, and the temperature of the liquid is controlled through the temperature control unit. Thus, after the liquid is supplied to the liquid conveying pipeline 32 from the liquid storage unit 31, the temperature of the liquid is heated and controlled by the temperature control unit 33, the hot liquid enters the adsorption unit 20, the adsorption unit 20 is heated in a heat conduction mode, and the adsorbed transient substrate is further heated, so that the residual gallium on the surface of the light-emitting device is liquefied. Through the heating unit 30, the temperature is easier to control, the residual gallium on the surface of the light-emitting device is more fully liquefied, and the excessive heating temperature can be avoided. Here, the liquid in the storage unit 31 of the heating unit 30 may be any liquid medium as long as it can be used as a heating liquid medium, for example, water, alcohols, esters, and the like, and may be waste water, waste liquid, and the like in a semiconductor manufacturing process, as long as its component boiling point is higher than the liquefaction temperature of the metal gallium.
Illustratively, as shown in fig. 2, a liquid supply channel is provided inside the adsorption substrate 21, and the liquid supply channel communicates with the liquid supply pipe 32. Like this, the liquid of stock solution unit 31 can directly get into the inside infusion runner of adsorption substrate 21 after the heating accuse temperature for carry out water bath heating to it, and have the more abundant even, the more efficient advantage of heating, have more efficient heating effect to the remaining gallium on luminescent device surface.
Illustratively, the rotating shaft 11 is a hollow structure, and the step of transferring the liquid in the liquid storage unit 31 to the adsorption unit 20 through the liquid transfer pipe 32 includes: the liquid feeding tube 32 is communicated with the liquid feeding flow path in the adsorption substrate 21 through the rotation shaft 11 having a hollow structure. Thus, when the rotation shaft 11 rotates the adsorption substrate 21, the entire heating unit 30 is not rotated, which can be understood by those skilled in the art.
In some embodiments, the steps of heating the adsorption unit 20 and controlling the adsorption unit 20 to rotate are performed in an inert gas and/or vacuum environment. This is advantageous to avoid oxidation of the liquefied residual gallium so that the liquefied gallium can be better separated from the light emitting device. The inert gas may be nitrogen, argon, etc., and the vacuum degree in the evacuated housing 40 may be 10-1～10-3Pa。
In summary, according to the above apparatus and method provided by the present invention, the transient substrate adhered with the light emitting device is adsorbed and fixed on the adsorption unit, and then gallium remaining on the surface of the light emitting device is liquefied by heating of the heating unit, and finally the gallium is separated from the surface of the wafer by the centrifugal force of rotation. In a word, the device and the method provided by the invention can more fully remove the metal gallium remained on the surface of the light-emitting device after laser stripping on the premise of not corroding the wafer, and make up for the defect that the residual gallium is difficult to remove in the laser stripping technology in the prior art.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (10)
1. A metal gallium removal device, comprising:
a rotation unit;
the adsorption unit is connected with the rotating unit and is driven by the rotating unit to rotate, and the adsorption unit is used for adsorbing a transient substrate;
wherein a light-emitting device is adhered to one side surface of the transient substrate, which is far away from the adsorption unit; and
the heating unit is used for heating the adsorption unit;
after the heating unit heats the adsorption unit, the temperature of the surface of the light-emitting device is greater than or equal to the liquefaction temperature of the gallium metal.
2. The metallic gallium removal apparatus of claim 1, wherein the adsorption unit comprises:
an adsorption substrate fixedly connected with the rotation unit;
the adsorption part is arranged on one side surface of the adsorption substrate, which deviates from the rotating unit, and the adsorption part is used for adsorbing the transient substrate.
3. The metal gallium removal apparatus according to claim 2, wherein the heating unit is heated by an electrode or a water bath.
4. The metal gallium removing device according to claim 3, wherein the heating unit is heated in a water bath, and comprises:
the liquid storage unit is used for storing and providing liquid;
one end of the liquid conveying pipeline is communicated with the liquid storage unit, and the other end of the liquid conveying pipeline is communicated with the inside of the adsorption unit;
and the temperature control unit is arranged in the liquid conveying pipeline and is used for controlling the temperature of the liquid conveyed to the adsorption unit through the liquid conveying pipeline.
5. The gallium metal removal device according to claim 4, wherein a liquid delivery channel is provided inside the adsorption substrate, and the liquid delivery channel is communicated with the liquid delivery pipe.
6. The metallic gallium removal device of any one of claims 1 to 5, further comprising:
an inert gas supply unit for placing the adsorption unit in an inert gas atmosphere; and/or the presence of a gas in the gas,
and the vacuumizing unit is used for enabling the adsorption unit to be in a vacuum environment.
7. A method for removing metal gallium is characterized in that based on a device for removing metal gallium, the device comprises a rotating unit, an adsorption unit and a heating unit; the method comprises the following steps:
controlling the adsorption unit to adsorb a transient substrate; wherein a light-emitting device is adhered to one side surface of the transient substrate, which is far away from the adsorption unit;
controlling the heating unit to heat the adsorption unit so that the temperature of the surface of the light-emitting device is greater than or equal to the liquefaction temperature of the gallium metal; and
and controlling the rotating unit to drive the adsorbing unit to rotate so as to enable the liquefied gallium to be separated from the light-emitting device under the action of rotating centrifugal force.
8. The method for removing metallic gallium according to claim 7, wherein the heating unit is heated by an electrode or a water bath.
9. The method for removing gallium metal according to claim 8, wherein when the heating unit is heated in a water bath, the heating unit comprises a liquid storage unit, a liquid delivery pipe and a temperature control unit;
the heating process comprises: and the liquid in the liquid storage unit is transmitted to the adsorption unit through the liquid conveying pipeline, and the temperature of the liquid is controlled through the temperature control unit.
10. The method of removing metallic gallium according to any one of claims 7 to 9, wherein the steps of heating the adsorption unit and controlling the adsorption unit to rotate are performed in an inert gas and/or vacuum environment.
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