CN112967947B - Device and method for removing gallium metal - Google Patents
Device and method for removing gallium metal Download PDFInfo
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- CN112967947B CN112967947B CN202010547253.6A CN202010547253A CN112967947B CN 112967947 B CN112967947 B CN 112967947B CN 202010547253 A CN202010547253 A CN 202010547253A CN 112967947 B CN112967947 B CN 112967947B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
Abstract
The invention relates to a device and a method for removing metal gallium, which are used for removing the metal gallium remained on a micro light-emitting diode chip after laser stripping, wherein the device comprises: an apparatus body comprising a process chamber; the fluid used for removing the gallium metal remained on the surface of the micro light-emitting diode chip after laser stripping is contained in the process chamber; wherein the fluid has a temperature greater than or equal to the melting point of the metallic gallium. The micro light-emitting diode chip stripped by the laser is soaked in the fluid by adopting a physical method according to the characteristic of low melting point (29.78 ℃) of the metal gallium, so that the metal gallium is changed from a solid state to a molten state, and the aim of removing the metal gallium is fulfilled. The yield of mass transfer and the quality of chips are improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a device and a method for removing metal gallium.
Background
Micro Light Emitting Diode (Micro-LED) technology is a new generation of display technology, wherein the macro transfer technology is an extremely important part in the manufacture of Micro-LEDs. The Micro-LED bulk transfer technology is a technology for transferring thousands of Micro-LEDs from a growth substrate to a target substrate, and metal gallium remains on an electrode of a Micro light-emitting diode chip after a bulk transfer section laser lift-off process. At present, the metal gallium is usually removed by adopting an acid (dilute hydrochloric acid) washing mode, although residual metal gallium can be removed by adopting acid washing, in the acid washing process, the acid can corrode electrodes on a micro light-emitting diode chip, and the micro light-emitting diode chip is easily damaged.
Therefore, how to remove the residual gallium metal without damaging the micro led chip is an urgent problem to be solved.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention is directed to a device and a method for removing gallium metal, and aims to provide a technical solution for removing residual gallium metal without damaging a micro-led chip and an electrode.
The technical scheme of the invention is as follows:
an apparatus for removing gallium metal, comprising:
an apparatus body comprising a process chamber;
the fluid used for removing the gallium metal remained on the surface of the micro light-emitting diode chip after laser stripping is contained in the process chamber; wherein the fluid has a temperature greater than or equal to the melting point of the metallic gallium.
According to the device for removing the metal gallium, the fluid with the temperature being more than or equal to the melting point of the metal gallium is contained in the process chamber, and the fluid is used for changing the metal gallium from a solid state to a molten state, so that the purpose of removing the metal gallium is achieved. The device has simple structure and easy operation.
Optionally, the apparatus further comprises a sensor disposed in the process chamber for detecting a process parameter in the process chamber.
Optionally, the sensors include a temperature sensor, a liquid level sensor, and a vacuum level sensor;
the temperature sensor is used for detecting the temperature of fluid in the process chamber;
the liquid level sensor is used for detecting the liquid level of the fluid in the process chamber;
the vacuum degree sensor is used for detecting the vacuum degree in the process chamber.
According to the device, the temperature sensor, the liquid level sensor and the vacuum degree sensor are arranged in the process chamber, so that the fluid in the device can be better monitored.
Optionally, the process chamber comprises a fluid inlet and a fluid outlet, and the fluid inlet and the fluid outlet are provided with valves for controlling the flow of the fluid.
Optionally, a temperature detector for detecting a temperature of the fluid and a flow detector for detecting a flow rate of the fluid are further provided at each of the fluid inlet and the fluid outlet.
Optionally, a pumping port for pumping vacuum is disposed at the top of the process chamber, and the pumping port is connected to a vacuum pump through a pumping pipeline.
Based on the same inventive concept, the invention also provides a method for removing the metal gallium, wherein the device comprises a process chamber; the method comprises the following steps:
providing a temporary storage substrate stripped by laser; wherein, a plurality of micro light emitting diode chips are adhered on the temporary storage substrate;
transferring the temporary storage substrate into the process chamber; and
introducing a certain amount of fluid into the process chamber to remove residual gallium on the surface of the micro light-emitting diode chip;
wherein the fluid has a temperature greater than or equal to the melting point of the gallium metal.
According to the method for removing the metal gallium, the fluid with the temperature being more than or equal to the melting point of the metal gallium is adopted, the metal gallium remained on the surface of the micro light-emitting diode chip is changed from a solid state to a molten state, and the molten metal gallium falls off from the surface of the micro light-emitting diode chip, so that the purpose of removing the metal gallium is achieved. Namely, the metal gallium is removed by a physical method, and the method is simple and convenient and easy to operate.
Optionally, the process chamber comprises a fluid inlet and a fluid outlet; the step of introducing fluid into the process chamber to remove the residual gallium metal on the surface of the micro light-emitting diode chip comprises the following steps:
closing the fluid outlet and passing fluid into the process chamber through the fluid inlet;
detecting the liquid level and the temperature of the fluid in the process chamber in real time in the process of introducing the fluid;
and opening the fluid outlet in response to the detection that the liquid level and the temperature of the fluid in the process chamber reach preset parameters, so that the fluid carrying the gallium metal flows out of the fluid outlet.
Optionally, before introducing the fluid into the process chamber, the method further includes:
and judging whether the vacuum degree in the process chamber meets a preset requirement or not.
Optionally, the fluid is a fluid that does not react with the micro light emitting diode chip.
Based on the same inventive concept, the invention also provides a laser lift-off system, comprising:
the laser stripping equipment is configured to separate the temporary storage substrate adhered with the micro light-emitting diode chips from the growth substrate;
an apparatus for removing gallium metal, the apparatus comprising a process chamber; the process chamber is internally filled with fluid for removing the gallium metal remained on the surface of the micro light-emitting diode after laser stripping;
wherein the fluid has a temperature greater than or equal to the melting point of the metallic gallium; and
a transfer device configured to transfer the temporary storage substrate after the laser lift-off into the process chamber.
According to the system, the temporary storage substrate stripped by the laser stripping equipment is transferred into the process chamber through the transfer device, and residual metal gallium is removed by using fluid in the process chamber, so that the system can be used for mass production.
Drawings
FIG. 1 is a schematic diagram of a prior art laser lift-off process;
fig. 2 is a schematic structural diagram of an apparatus for removing gallium metal according to an embodiment of the present invention;
fig. 3 is a schematic flow chart of a method for removing gallium metal according to an embodiment of the present invention;
FIG. 4 is a schematic flow chart illustrating the process of introducing a fluid into the process chamber in the method for removing gallium metal according to the embodiment of the present invention;
fig. 5 is a schematic diagram of a laser lift-off system according to an embodiment of the present invention.
Description of reference numerals:
10-a process chamber; 11-a temperature sensor; 12-a liquid level sensor; 13-vacuum degree sensor; 100-a fluid inlet; 101-a valve; 102-a temperature detector; 103-a flow detector; 104-an electronic pressure gauge; 110-a fluid outlet; 111-a valve; 112-a temperature detector; 113-a flow detector; 114-an electronic pressure gauge; 120-an extraction opening; 200-laser lift-off equipment; 300-a device for removing gallium metal; 400-a transfer device; 210-a laser source; 211-laser galvanometer; 220-control means.
Detailed Description
To facilitate an understanding of the invention, the invention will now be described more fully hereinafter with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
The Micro Light Emitting Diode (Micro-LED) technology is a new generation of display technology, wherein the mass transfer technology is an important part in the Micro-LED manufacturing, the Micro-LED mass transfer technology is a technology for transferring thousands of Micro-LEDs from a growth substrate to a target substrate through a temporary storage substrate, in the transfer process, usually, the Micro-LED chip and the temporary storage substrate are adhered to each other, then the Micro-LED chip is peeled from the growth substrate by using a laser peeling technology, and finally the temporary storage substrate adhered with the Micro-LED chip and the target substrate are bonded (bonded).
In an exemplary technique, the material of the connection portion between the Micro-LED chip and the growth substrate is GaN (gallium nitride), which may be partially decomposed when irradiated with laser lightNitrogen (2 GaN → 2Ga + N) 2 ) Therefore, when the material of the connection portion of the Micro-LED and the growth substrate is GaN, and the growth substrate is irradiated with laser on the side away from the Micro-LED, the laser can be irradiated on the side of the Micro-LED through the transparent growth substrate, and the GaN of the connection portion of the Micro-LED and the growth substrate is partially decomposed, so that the generated nitrogen can form a certain thrust, which is helpful for the Micro-LED to fall off from the growth substrate, and metal gallium remains on the surface of the Micro-LED electrode after the Micro-LED falls off, as shown in fig. 1. The method is characterized in that the method comprises the following steps of (1) stripping a laser, and then removing the residual gallium on the micro light-emitting diode chip by using a pickling method.
Based on this, the present invention intends to provide a solution to the above technical problem, the details of which will be explained in the following embodiments.
Referring to fig. 2, as shown in fig. 2, the present invention provides a device for removing gallium metal, including: the device body comprises a process chamber 10, wherein fluid for removing residual gallium metal on the surface of the micro light-emitting diode chip after laser stripping is contained in the process chamber 10, and the temperature of the fluid is greater than or equal to the melting point of the gallium metal.
In this embodiment, the process chamber 10 may be an open-top or fully sealed container. It will be readily appreciated that the process chamber 10 is provided with ports for the insertion and removal of micro led chips. The specific size of the process chamber 10 can be set according to practical needs, and is not limited herein. The shape of the process chamber 10 may be cylindrical, square groove, etc., and the material of the process chamber 10 may be metal or plastic, which is not limited herein.
In an embodiment of the present embodiment, a temperature sensor 11 for detecting a temperature of the fluid (the fluid inside the process chamber 10) is further disposed on an inner surface of the process chamber 10, and the temperature of the fluid inside the process chamber 10 is detected in real time by the temperature sensor 11, so that the fluid temperature meets process requirements. The temperature sensor 11 may be an electronic temperature sensor or other type of temperature sensor.
In an implementation manner of this embodiment, a liquid level sensor 12 for detecting the liquid level of the fluid is further disposed on the inner surface of the process chamber 10, and the liquid level inside the process chamber 10 is detected, so as to prevent the liquid level from being too low (lower than a lower limit set by the liquid level) or too high (higher than an upper limit set by the liquid level) and affecting the removal effect of the gallium metal. Wherein the lower limit set by the liquid level may be at a position of 30% of the volume of the process chamber 10, but may of course be at a position of 40% of the volume of the process chamber 10 or at a position of 20% of the volume of the process chamber 10. The upper limit set by the liquid level may be at a position of 70% of the volume of the process chamber 10, but may of course be at a position of 80% of the volume of the process chamber 10 or at a position of 90% of the volume of the process chamber 10.
In one embodiment of the present embodiment, a fluid inlet 100 is disposed on the process chamber 10, a valve 101 for controlling the flow of the fluid is disposed at the fluid inlet 100, a temperature detector 102 for detecting the temperature of the fluid at the fluid inlet 100, and a flow detector 103 for detecting the flow of the fluid at the fluid inlet 110. The valve 101 may be a switch solenoid valve with a feedback function, and the switch solenoid valve with the feedback function may be remotely controlled. The temperature sensor 102 may be the same as or different from the temperature sensor disposed inside the process chamber 10. The flow detector 103 may be an electronic flow meter, a rotameter, or the like. It will be readily appreciated that an electronic pressure gauge 104 may also be provided to sense the pressure at the fluid inlet 100. The injected fluid can be conveniently controlled by providing an electronic flow meter and an electronic pressure meter, for example, if the pressure of the fluid at the inlet and the outlet is low as detected by the electronic pressure meter, the flow rate of the fluid entering the process chamber 10 may also be reduced, and since the fluid outlet 110 is opened, if the adjustment is not performed, the liquid level is easily fluctuated, which affects the removal of gallium metal. This can be adjusted by adjusting the opening of the solenoid valve at the fluid outlet 110, or by increasing the pressure at the fluid inlet 100.
In one embodiment of the present embodiment, the process chamber 10 is provided with a fluid outlet 110, a valve 111 for controlling the flow of the fluid is disposed at the fluid outlet 110, a temperature detector 112 for detecting the temperature of the fluid at the fluid outlet 110, and a flow detector 113 for detecting the flow of the fluid at the fluid outlet 110. The valve 111 may be a switch solenoid valve with a feedback function, and may be remotely controlled through the switch solenoid valve with the feedback function. The temperature detector 112 may be the same as or different from the temperature detector disposed inside the process chamber 10. The flow detector 113 may be an electronic flow meter, a rotameter, or the like. It will be readily appreciated that an electronic pressure gauge 114 may also be provided to sense the pressure at the fluid outlet 110.
It is easy to understand that the temperature inside the process chamber 10 is not uniform in the continuous production process, and in order to ensure the removal efficiency of the gallium metal (for example, when the temperature is lower than 35 ℃, although the gallium metal can be removed from the solid state to the molten state, the removal rate is slow), the temperature of the fluid flowing out can be detected by the temperature detector 112, and the temperature of the fluid inside the process chamber 10 can be inversely estimated according to the detection result. For example, the temperature of the outgoing fluid is 33 ℃, and the temperature of the fluid detected by the temperature sensor on the inner surface of the process chamber 10 is 40 ℃, which means that the temperature of the fluid inside the process chamber 10 is locally low, and can be adjusted by increasing the temperature of the incoming fluid in order to improve the removal efficiency of the gallium metal.
In the present embodiment, the fluid inlet 100 is disposed above the process chamber 10, and the fluid outlet 110 is disposed below the process chamber 10, i.e., the fluid inlet 100 is located at the upper portion of the process chamber 10, and the fluid outlet 110 is located at the lower portion. In use, the process chamber 10 is replenished with fluid from above, which avoids disturbance of the fluid at the bottom and affects the removal.
In one embodiment of the present embodiment, a vacuum sensor 13 is further disposed on the process chamber 10 for detecting the vacuum degree inside the process chamber 10. In the processes of fluid entering and exiting the process chamber 10 and picking and placing the micro light emitting diode chip, a certain influence is caused on the vacuum degree in the process chamber 10, so that a vacuum pumping port 120 for pumping vacuum may be formed at the top of the process chamber 10, so as to pump vacuum to the process chamber 10 and ensure the vacuum atmosphere of the process chamber 10, and the vacuum pumping port 120 is connected to a vacuum pump (not shown) through a vacuum pumping pipeline (not shown).
Based on the above apparatus for removing gallium metal, the present invention further provides a method for removing gallium metal, as shown in fig. 3, the method includes the steps of:
s10, providing a temporary storage substrate stripped by laser; wherein, a plurality of micro light emitting diode chips are adhered on the temporary storage substrate;
specifically, a device for removing metal gallium is provided first, and the specific structure of the provided device for removing metal gallium is as described above, which is not described herein again. And in a vacuum environment, carrying out laser stripping on the temporary storage substrate and the sapphire substrate, wherein a plurality of micro light-emitting diode chips are adhered on the temporary storage substrate.
S20, transferring the temporary storage substrate into the process chamber;
specifically, the temporary storage substrate may be transferred to the process chamber by a robot clamp, or may be transferred by other methods. It is easy to understand that the temporary storage substrate can be transferred by one temporary storage substrate at a time or by a plurality of temporary storage substrates at a time.
S30, introducing a certain amount of fluid into the process chamber to remove residual gallium on the surface of the micro light-emitting diode chip; wherein the fluid has a temperature greater than or equal to the melting point of the metallic gallium.
Specifically, after the temporary substrate is placed inside the process chamber 10 of the apparatus, a fluid is introduced into the process chamber 10, so that the gallium metal adhered to the temporary substrate is in contact with the fluid. Because the temperature of the fluid is more than or equal to the melting point temperature of the gallium metal, the gallium metal can be changed from a solid state to a molten state, and then the gallium metal can be separated from the micro light-emitting diode chip, so that the purpose of removing the gallium metal is achieved. The fluid is a fluid which does not react with the micro light-emitting diode chip after being heated, and the fluid includes, but is not limited to, deionized water, ultrapure water, ethanol and the like.
In an implementation manner of this embodiment, as shown in fig. 4, the step S30 specifically includes:
s301, closing the fluid outlet, and introducing fluid into the process chamber through the fluid inlet;
s202, detecting the liquid level and the temperature of the fluid in the process chamber in real time in the process of introducing the fluid;
s203, in response to the fact that the liquid level and the temperature of the fluid in the process chamber reach preset parameters, the fluid outlet is opened, and the fluid carrying the gallium metal flows out of the fluid outlet.
In this embodiment, the process chamber 10 includes a fluid inlet 100 and a fluid outlet 110, and a valve, a temperature detector, a pressure detector, a flow detector, etc. are disposed at the fluid inlet 100 and the fluid outlet 110. Fluid is introduced into the process chamber 10 through a fluid inlet 100 arranged on the process chamber 10, and the introduced fluid is monitored through detectors arranged at the fluid inlet 100, so that the normal removal of the gallium metal is ensured.
For example, using deionized water as the fluid, the on-off solenoid valve at the fluid inlet 100 is opened (while the on-off solenoid valve at the fluid outlet 110 is kept closed) to allow deionized water to flow into the process chamber 10. In the process of flowing in the deionized water, the temperature sensor 11 and the liquid level detector 12 arranged on the inner surface of the process chamber 10 are used for monitoring the temperature and the liquid level of the deionized water in the process chamber 10 in real time, the temperature signal data detected by the temperature sensor 11 is transmitted to a host (such as a main control cabinet) connected with the host, and the host responds to the temperature signal data. It is easy to understand that the host is in communication connection with the production computer, the host is provided with temperature abnormity early warning, when the temperature is lower than the melting point of gallium metal or higher than a certain temperature, such as 90 ℃, an abnormity signal is sent, if the temperature sensor detects that the temperature of the deionized water is 20 ℃ (lower than 29.78 ℃), that is, the process setting requirement is not met, the abnormity information is fed back to the production computer, and the production computer adjusts the temperature of the deionized water at the fluid inlet 100, such as increasing the inflow of the deionized water, increasing the temperature of the deionized water, and the like.
Similarly, the liquid level signal data detected by the liquid level sensor 12 is transmitted to the host connected with the liquid level sensor, the host responds to the liquid level signal data, if the liquid level of the deionized water is detected to be lower than the lower limit, abnormal information is fed back, the opening degree of the on-off electromagnetic valve at the fluid inlet 100 is adjusted through the production computer, and the opening degree of the on-off electromagnetic valve is increased. When both the temperature and the level of deionized water in the process chamber 10 are satisfied, the fluid inlet 100 is closed. And taking out the micro light-emitting diode chip in the process chamber 10 after soaking. The specific soaking time can be set according to the production beat. It is easy to understand that, when the liquid level sensor 12 detects that the liquid level of the deionized water is higher than the preset upper limit liquid level, the abnormal information is fed back, the production computer is used for adjusting the opening degree of the on-off solenoid valve at the fluid inlet 100, the on-off solenoid valve at the fluid inlet 100 is closed, and the opening degree of the solenoid valve at the fluid outlet 110 is increased, so that the liquid level is within the process setting range, and after the liquid level is normal, the opening degrees of the solenoid valves at the fluid inlet 100 and the fluid outlet 110 can be adjusted simultaneously, so that the deionized water entering and exiting the process chamber 10 is in a dynamic balance state.
In one embodiment of this example, the temperature of the fluid may be 29.78 ℃ to 35 ℃,35 ℃ to 40 ℃,40 ℃ to 45 ℃,45 ℃ to 50 ℃,50 ℃ to 55 ℃,55 ℃ to 60 ℃,60 ℃ to 65 ℃,65 ℃ to 70 ℃,70 ℃ to 75 ℃,75 ℃ to 80 ℃,80 ℃ to 85 ℃, or 85 ℃ to 90 ℃. The melting point of the metal gallium is 29.78 ℃, and the metal gallium can be removed by a physical method by utilizing the characteristic, so that the corrosion of hydrochloric acid to the micro light-emitting diode chip and the electrode in the existing wet process is avoided, and the mass transfer yield and the quality of the micro light-emitting diode chip are improved.
In an embodiment of this embodiment, in order to prevent the residual gallium on the micro led die from undergoing an oxidation reaction during the gallium removal process (gallium oxide generated by the oxidation reaction cannot be removed by the used fluid), an inert atmosphere may be formed in the process chamber 10 by filling the process chamber 10 with an inert gas. The inert gas may be helium, argon, nitrogen, or other inert gas.
In an embodiment of this embodiment, in order to prevent the residual gallium on the micro led die from undergoing an oxidation reaction during the process of changing the gallium from the solid state to the molten state, before the fluid is introduced into the process chamber, the method of this application may further include the steps of:
and judging whether the vacuum degree in the process chamber meets a preset requirement or not.
Specifically, a vacuum may be drawn to form a certain degree of vacuum in the process chamber 10. Namely, after placing the micro light-emitting diode chip with the gallium metal left on the surface in the device, sealing the process chamber 10; and detecting the vacuum degree of the process chamber 10, and when the vacuum degree does not meet the preset vacuum degree, vacuumizing the process chamber 10 through the vacuumizing hole 120 until the vacuum degree meets the preset vacuum degree.
The vacuum degree of the vacuum is 5Pa to 0.2Pa, and the vacuum degree is set in the range, so that the micro light-emitting diode chip can be prevented from being oxidized when being soaked in fluid, and special equipment (maintaining the severer vacuum degree) is not required.
Based on the above device and method for removing metal gallium, the present disclosure also provides a laser lift-off system, as shown in fig. 5, the laser lift-off system includes: a laser lift-off device 200 configured to separate the temporary storage substrate to which the micro light emitting diode chips are adhered from the growth substrate; gallium metal is remained on a plurality of micro light-emitting diode chips; an apparatus 300 for removing gallium metal, the apparatus comprising a process chamber 10; the process chamber 10 contains a fluid for removing gallium metal remained on the surface of the micro light-emitting diode after laser stripping; wherein the fluid has a temperature greater than or equal to the melting point of the metallic gallium; and a transfer device 400 configured to transfer the temporary storage substrate after the laser lift-off into the process chamber 10.
In this embodiment, the specific structure of the device 300 for removing metal gallium is as described above, and is not described herein again. The laser lift-off apparatus 200 includes a laser source 210 for emitting a laser beam, the laser source 210 being configured to radiate laser light of a preset wavelength; the laser oscillating mirror 211 is arranged on an optical path of the laser source 210, and the control device 220 is electrically connected with the laser source 210 and is configured to shape the laser emitted by the laser source 210 into a light spot with a preset size. Wherein, the light spot can be a linear light spot or a point light spot. By way of example, the linear light spot has a length of 50mm and a width of 0.04mm, and the spot has an area of 600 μm 2 To 605 μm 2 ，605μm 2 To 610 μm 2 ，610μm 2 To 615 μm 2 ，615μm 2 To 620 μm 2 。
In a vacuum atmosphere, the control device 220 is utilized to control the laser beam emitted by the laser source 210 to form a point-like light spot, and the growth substrate is scanned and irradiated by the laser galvanometer 211 to separate the temporary storage substrate from the growth substrate.
Illustratively, the growth substrate is a sapphire growth substrate, and the laser emitted from the laser source 210 is shaped to 615 μm by the control device 220 2 When the laser galvanometer 211 is used for scanning one side far away from the Micro-LED, laser can irradiate one side of the Micro-LED through the transparent sapphire growth substrate, and partial GaN of the connection part of the Micro-LED and the sapphire growth substrate is decomposed, so that the Micro-LED falls off from the sapphire growth substrate, wherein the Micro-LED is adhered to the temporary storage substrate through adhesion. Is easy to useIt is understood that the control technique of the laser beam by the control device 220 is conventional in the art, and the specific operation and control thereof are not limited herein.
In this embodiment, the transferring device 400 may be a mechanical arm, that is, after the Micro-LED is detached from the sapphire growth substrate (that is, laser lift-off is achieved), the mechanical arm is used to clamp the Micro-LED and transport the Micro-LED into the process chamber 10, and then the method steps for removing gallium described above are adopted to perform an operation, so as to remove gallium.
In an embodiment of the present embodiment, the laser lift-off apparatus 200 further includes a lift-off chamber (not shown), the device 300 for removing metal gallium can be disposed inside the lift-off chamber, and can be directly disposed inside the process chamber by a mechanical handle Micro-LED through a transfer method, so that the transfer time is saved.
In summary, the present invention provides an apparatus and a method for removing metal and a laser lift-off system, wherein the apparatus includes: an apparatus body comprising a process chamber; the fluid used for removing the gallium metal remained on the surface of the micro light-emitting diode chip after laser stripping is contained in the process chamber; wherein the fluid has a temperature greater than or equal to the melting point of the metallic gallium. The device has simple structure and easy operation, and realizes the removal of the metal gallium by utilizing the physical principle. The yield of mass transfer and the quality of chips are improved. Meanwhile, the method can be used for mass production.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (8)
1. An apparatus for removing gallium metal, comprising:
an apparatus body comprising a process chamber;
the fluid used for removing the gallium metal remained on the surface of the micro light-emitting diode chip after laser stripping is contained in the process chamber;
wherein the fluid has a temperature greater than or equal to the melting point of the metallic gallium;
the sensor is arranged in the process chamber and used for detecting process parameters in the process chamber;
the sensor comprises a temperature sensor and a vacuum degree sensor; the temperature sensor is used for detecting the temperature of fluid in the process chamber; the vacuum degree sensor is used for detecting the vacuum degree in the process chamber;
the process chamber comprises a fluid inlet and a fluid outlet;
and the fluid inlet and the fluid outlet are respectively provided with a temperature detector for detecting the temperature of the fluid and a flow detector for detecting the flow of the fluid.
2. The apparatus of claim 1, wherein the sensor comprises a liquid level sensor; the level sensor is used to detect the level of fluid within the process chamber.
3. The apparatus of claim 1, wherein the fluid inlet and the fluid outlet are each provided with a valve for controlling the flow of fluid.
4. The apparatus according to any of claims 1 to 3, wherein the process chamber is provided with a pumping port at the top for pumping vacuum, the pumping port being connected to a vacuum pump via a pumping line.
5. A method for removing metal gallium is characterized in that the method is based on a device for removing metal gallium, and the device comprises a process chamber; the method comprises the following steps:
providing a temporary storage substrate stripped by laser; wherein, a plurality of micro light emitting diode chips are adhered on the temporary storage substrate;
transferring the temporary storage substrate into the process chamber; and
introducing a certain amount of fluid into the process chamber to remove residual gallium on the surface of the micro light-emitting diode chip;
wherein the fluid has a temperature greater than or equal to the melting point of the metallic gallium;
and filling inert gas into the process chamber to prevent the residual gallium on the micro light-emitting diode chip from oxidation reaction.
6. The method of claim 5, wherein the process chamber comprises a fluid inlet and a fluid outlet; the step of introducing fluid into the process chamber to remove the residual gallium metal on the surface of the micro light-emitting diode chip comprises the following steps:
closing the fluid outlet and introducing fluid into the process chamber through the fluid inlet;
detecting the liquid level and the temperature of the fluid in the process chamber in real time in the process of introducing the fluid;
and opening the fluid outlet in response to the detection that the liquid level and the temperature of the fluid in the process chamber reach preset parameters, so that the fluid carrying the gallium metal flows out of the fluid outlet.
7. The method of claim 5, further comprising, prior to introducing the fluid into the process chamber:
and judging whether the vacuum degree in the process chamber meets a preset requirement or not.
8. The method of any one of claims 5-7, wherein the fluid is a fluid that does not react with the micro light emitting diode chip.
Priority Applications (1)
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| GaN基半导体材料的157nm激光微刻蚀;戴玉堂等;《中国激光》(第12期);全文 * |
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