CN112967934A - Packaging structure and manufacturing method thereof - Google Patents

Packaging structure and manufacturing method thereof Download PDF

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Publication number
CN112967934A
CN112967934A CN202110180084.1A CN202110180084A CN112967934A CN 112967934 A CN112967934 A CN 112967934A CN 202110180084 A CN202110180084 A CN 202110180084A CN 112967934 A CN112967934 A CN 112967934A
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China
Prior art keywords
dam
layer
manufacturing
substrate unit
dam body
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CN202110180084.1A
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Chinese (zh)
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章军
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Chizhou Yunzhong Electronic Technology Co ltd
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Chizhou Yunzhong Electronic Technology Co ltd
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Priority to CN202110180084.1A priority Critical patent/CN112967934A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4857—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/055—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads having a passage through the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Geometry (AREA)
  • Laminated Bodies (AREA)

Abstract

The application discloses a packaging structure and a manufacturing method thereof, wherein the method comprises the following steps: providing a low-temperature co-fired ceramic substrate, wherein the low-temperature co-fired ceramic substrate comprises a plurality of stacked substrate units, conductors penetrating through the upper surface and the lower surface of each substrate unit are arranged on the substrate units, interlayer conducting layers are arranged on the upper surfaces of the substrate units except the uppermost layer, and no interlayer conducting layer is arranged on the upper surface of the substrate unit on the uppermost layer; manufacturing a first conductive layer on the upper surface of the substrate unit on the uppermost layer, and manufacturing a second conductive layer on the lower surface of the substrate unit on the lowermost layer; the first conducting layer and the second conducting layer are respectively obtained by adopting any one of the following methods: the copper plating is directly carried out; and manufacturing a conductive film layer on the surface of the substrate unit, and performing laser etching on the conductive film layer or removing part of the conductive film layer by adopting a CNC (computerized numerical control) processing mode according to a preset circuit pattern. The method can improve the circuit accuracy of the multilayer ceramic substrate.

Description

Packaging structure and manufacturing method thereof
Technical Field
The present disclosure relates to the field of semiconductor substrate manufacturing technologies, and in particular, to a package structure and a manufacturing method thereof.
Background
The ceramic material has the advantages of high reliability, good thermal conductivity, thermal expansion coefficient matched with chip material, high electrical insulation strength and the like, is an ideal heat dissipation material for packaging technology, and the development and trend of the existing ceramic packaging technology continuously develop towards the directions of low thermal resistance, high reliability, long service life, easy processing, small size, low cost and the like. Ceramic packaging occupies a place in the field of power electronic devices all the time due to the characteristics of good heat conduction, high reliability and the like.
The substrate of the initial ceramic package mainly adopts LTCC (Low Temperature co-fired ceramic) and HTCC (High Temperature co-fired ceramic) process technologies, and due to the defect of processing precision, the problem is solved by the invention of a DPC (Direct Plating Copper) process which is a new technology. The DPC ceramic circuit board adopts the technology of combining a film circuit and an electroplating process, the circuit is manufactured on a film metalized ceramic substrate in an image transfer mode, and then the perforation electroplating technology is adopted to form vertical interconnection among high-density double-sided wiring lines, so that the DPC ceramic circuit board has the characteristics of high circuit precision, high surface flatness, high insulation and high heat conduction, and rapidly occupies an important market position in the field of high-power packaging.
The traditional manufacturing process flow of the DPC ceramic circuit board comprises the following typical steps: providing a ceramic substrate, plating thin copper in vacuum, pasting a dry film, exposing and developing, electroplating copper, chemically stripping and etching, performing surface treatment, and forming a ceramic circuit board. Chinese patent No. CN102709439B discloses an LED ceramic support and a method for preparing the same, the method comprising the steps of: (1) punching; (2) ultrasonic cleaning; (3) etching by an ion source; (4) performing magnetron sputtering; (5) chemical copper deposition; (6) pasting a dry film, exposing and developing; (7) electroplating and thickening; (9) removing the dry film; (10) removing titanium and copper layers; (11) and (4) removing tin. The existing DPC ceramic circuit board manufacturing process has the following defects: the production process is long, the working procedures are multiple, the control of the technological process is complex, the product quality is easy to be unstable, and the production cost is increased. In addition, the DPC ceramic circuit board manufacturing process can not manufacture more than two layers of circuits, while the LTCC and HTCC process technologies can manufacture multi-layer circuits.
Therefore, it is of practical significance to research how to improve the line accuracy and the surface flatness of the multilayer ceramic substrate.
Disclosure of Invention
The application aims to provide a packaging structure and a manufacturing method thereof, and the manufacturing method of the packaging structure is improved, so that the circuit accuracy and the surface flatness of a multilayer ceramic substrate are improved.
The purpose of the application is realized by adopting the following technical scheme:
a manufacturing method of a packaging structure comprises the following steps:
providing a low-temperature co-fired ceramic substrate, wherein the low-temperature co-fired ceramic substrate comprises a plurality of stacked substrate units, conductors penetrating through the upper surface and the lower surface of each substrate unit are arranged on the substrate units, interlayer conducting layers are arranged on the upper surfaces of the substrate units except the uppermost layer, and no interlayer conducting layer is arranged on the upper surface of the substrate unit on the uppermost layer;
manufacturing a first conductive layer on the upper surface of the uppermost substrate unit, manufacturing a second conductive layer on the lower surface of the lowermost substrate unit, wherein the first conductive layer is electrically connected with the conductor in the uppermost substrate unit, and the second conductive layer is electrically connected with the conductor in the lowermost substrate unit;
the first conducting layer and the second conducting layer are respectively obtained by adopting any one of the following methods:
the copper plating is directly carried out;
and manufacturing a conductive film layer on the surface of the substrate unit, and performing laser etching on the conductive film layer or removing part of the conductive film layer by adopting a CNC (computerized numerical control) processing mode according to a preset circuit pattern.
Preferably, the low-temperature co-fired ceramic substrate is obtained by the following method: providing a plurality of green ceramic tapes form on the green ceramic tape and run through the conducting hole of the upper and lower two sides of the green ceramic tape, to fill conductive material in the conducting hole of the green ceramic tape in order to form the electric conductor, outside the uppermost layer the surface of the green ceramic tape forms the conducting layer between layers, the uppermost layer the green ceramic tape does not set up the conducting layer between layers, and will be a plurality of the green ceramic tape is stacked and hot pressed, then right the green ceramic tape is sliced and co-fired with low temperature, and the low temperature co-fired ceramic substrate is obtained.
Preferably, the method further comprises the following steps: and forming a passive device on the surface of at least one green ceramic tape except the uppermost layer.
Preferably, the method for manufacturing the first conductive layer and/or the second conductive layer on the surface of the substrate unit by using a direct copper plating method comprises the following steps: the method comprises the steps of manufacturing a first conductive film layer on the surface of a substrate unit in a vacuum evaporation mode, pasting a dry film on the first conductive film layer, then utilizing a photomask to expose and develop the surface of the substrate unit to obtain a circuit pattern, manufacturing a second conductive film layer on the circuit pattern of the substrate unit in an electroplating mode, and removing the dry film and the first conductive film layer except the circuit pattern to obtain a patterned first conductive layer and/or a patterned second conductive layer.
Preferably, the method for manufacturing the conductive film layer on the surface of the substrate unit includes:
manufacturing a conductive film layer on the surface of the substrate unit in a vacuum coating mode; or the like, or, alternatively,
firstly, a third conductive film layer is manufactured on the surface of the substrate unit in a vacuum coating mode, then a fourth conductive film layer is manufactured on the third conductive film layer in an electroplating mode, and the third conductive film layer and the fourth conductive film layer form the conductive film layer.
Preferably, the vacuum coating mode is magnetron sputtering.
Preferably, the manufacturing method further comprises: and manufacturing a protective film layer on the first conductive layer and/or the second conductive layer.
Preferably, the manufacturing method further comprises:
arranging a dam on the upper surface of the uppermost substrate unit, wherein the dam is a plastic dam and is provided with a top surface, an opposite inner side surface and an opposite outer side surface;
and providing a metal piece, wherein the metal piece is arranged on the dam and covers at least part of the top surface and/or at least part of the inner side surface of the dam.
Preferably, the method of providing a dam on an upper surface of the uppermost substrate unit includes: and adhering the box dam to the uppermost layer of the substrate unit, or taking the metal piece as a part of a mould for manufacturing the box dam, and manufacturing the box dam on the upper surface of the uppermost layer of the substrate unit in an injection molding mode.
Preferably, the manufacturing method further comprises:
arranging a dam on the upper surface of the substrate unit on the uppermost layer, wherein the dam comprises a lower-layer dam body and an upper-layer dam body, the lower-layer dam body is arranged on the upper surface of the substrate unit on the uppermost layer, the lower-layer dam body is made of plastic, the lower-layer dam body is provided with a top surface, an opposite inner side surface and an outer side surface, and the upper-layer dam body is arranged on the top surface of the lower-layer dam body and forms a stepped structure;
and providing a metal piece, wherein the metal piece is arranged on the lower layer dam body and covers at least part of the top surface and/or at least part of the inner side surface of the lower layer dam body.
Preferably, the method of disposing the lower dam on the upper surface of the uppermost substrate unit includes: will lower floor's dam adhesion is in the superiors the upper surface of base plate unit, or, will the metalwork is as the preparation the mould of lower floor's dam partly, adopt the mode of moulding plastics at the superiors the upper surface of base plate unit is made lower floor's dam will the metalwork buries the preparation the mould of lower floor's dam adopts the mode of moulding plastics preparation to be connected as an organic whole the metalwork with lower floor's dam to it is as an organic whole to connect the metalwork with lower floor's dam sets up at the superiors the upper surface of base plate unit.
Preferably, the manufacturing method further comprises:
at the superiors the upper surface of base plate unit sets up the box dam, the box dam includes lower floor's dam and upper dam, lower floor's dam sets up at the superiors the upper surface of base plate unit, lower floor's dam is the metal material, lower floor's dam has top surface, relative medial surface and lateral surface, upper dam sets up on the lower floor's dam top surface and form the stair structure.
Preferably, the manufacturing method further comprises:
arranging a surrounding dam on the upper surface of the substrate unit on the uppermost layer, wherein the surrounding dam comprises an inner-layer dam body and an outer-layer dam body, the inner-layer dam body is sleeved in the outer-layer dam body and is made of plastic materials, and the inner-layer dam body is provided with a top surface, an opposite inner side surface and an opposite outer side surface;
and providing a metal piece, wherein the metal piece is arranged on the inner layer dam body and covers at least part of the top surface and/or at least part of the inner side surface of the inner layer dam body.
Preferably, the outer-layer dam is made of a metal material, and the method for arranging the inner-layer dam on the upper surface of the uppermost substrate unit includes: will outer dam is as the preparation the partly of the mould of inlayer dam adopts the mode of moulding plastics at the superiors the inlayer dam is made to the upper surface of base plate unit, or, will outer dam buries the preparation the mould of inlayer dam adopts the mode of moulding plastics preparation to be connected as an organic whole outer dam with the inlayer dam to will connect as an organic whole outer dam with the inlayer dam sets up at the superiors the upper surface of base plate unit.
Preferably, the method of disposing the inner dam on the upper surface of the uppermost substrate unit includes: will inlayer dam adhesion is in the superiors the upper surface of base plate unit, or, will the metalwork is as the preparation the partly of the mould of inlayer dam adopts the mode of moulding plastics at the superiors the inlayer dam is made to the upper surface of base plate unit, or, will the metalwork buries the preparation the mould of inlayer dam adopts the mode of moulding plastics preparation to be connected as an organic whole the metalwork with the inlayer dam to it is as an organic whole to connect the metalwork with the inlayer dam sets up at the superiors the upper surface of base plate unit.
Preferably, the manufacturing method further comprises: the upper surface of the base plate unit on the uppermost layer is provided with a surrounding dam, the surrounding dam comprises an inner-layer dam body and an outer-layer dam body, the inner-layer dam body is sleeved in the outer-layer dam body, and the inner-layer dam body is made of metal materials.
Preferably, the outer-layer dam is made of plastic, and the method for arranging the outer-layer dam on the upper surface of the uppermost substrate unit includes: will outer dam adhesion is in on the inlayer dam, or, will the inlayer dam is as the preparation the part of the mould of outer dam, adopt the mode of moulding plastics at the superiors the upper surface of base plate unit is made outer dam, or, will the preparation is buried to the inlayer dam the mould of outer dam adopts the mode of moulding plastics preparation to be connected as an organic whole the inlayer dam with outer dam to it is as an organic whole to connect the inlayer dam with outer dam sets up at the superiors the upper surface of base plate unit.
A packaging structure comprises a low-temperature co-fired ceramic substrate, wherein the low-temperature co-fired ceramic substrate comprises a plurality of stacked substrate units, conductors penetrating through the upper surface and the lower surface of the low-temperature co-fired ceramic substrate units are arranged on the substrate units, interlayer conducting layers are arranged on the upper surfaces of the substrate units except the uppermost layer, and no interlayer conducting layer is arranged on the upper surface of the substrate unit on the uppermost layer;
the upper surface of the substrate unit on the uppermost layer is provided with a first conducting layer, the lower surface of the substrate unit on the lowermost layer is provided with a second conducting layer, the first conducting layer is electrically connected with the conductor in the substrate unit on the uppermost layer, the second conducting layer is electrically connected with the conductor in the substrate unit on the lowermost layer, and the first conducting layer and the second conducting layer are respectively obtained by adopting any one of the following methods:
the copper plating is directly carried out; or the like, or, alternatively,
and manufacturing a conductive film layer on the surface of the substrate unit, and performing laser etching on the conductive film layer or removing part of the conductive film layer by adopting a CNC (computerized numerical control) processing mode according to a preset circuit pattern to obtain the conductive film layer.
Preferably, the substrate unit further comprises a protective film layer arranged on the first conductive layer and/or the second conductive layer, and/or a passive device arranged on at least one substrate unit except the uppermost layer.
Preferably, the method further comprises the following steps:
the box dam is a plastic box dam, is arranged on the upper surface of the uppermost substrate unit and is provided with a top surface, an opposite inner side surface and an outer side surface;
the metal piece is arranged on the dam and covers at least part of the top surface and/or at least part of the inner side surface of the dam.
Preferably, the method further comprises the following steps:
the dam comprises a lower dam body and an upper dam body, the lower dam body is arranged on the upper surface of the substrate unit on the uppermost layer, the lower dam body is made of plastic, the lower dam body is provided with a top surface, an opposite inner side surface and an outer side surface, and the upper dam body is arranged on the top surface of the lower dam body and forms a stepped structure;
the metal piece is arranged on the lower layer dam body and covers at least part of the top surface and/or at least part of the inner side surface of the lower layer dam body.
Preferably, the method further comprises the following steps:
the box dam, the box dam includes lower floor's dam body and upper dam body, lower floor's dam body sets up in the superiors the upper surface of base plate unit, lower floor's dam body is the metal material, lower floor's dam body has top surface, relative medial surface and lateral surface, upper dam body sets up on the lower floor's dam body top surface and form the stair structure.
Preferably, the method further comprises the following steps:
the dam comprises an inner-layer dam body and an outer-layer dam body, the inner-layer dam body is sleeved in the outer-layer dam body, the inner-layer dam body is made of plastic materials, and the inner-layer dam body is provided with a top surface, an opposite inner side surface and an opposite outer side surface;
the metal piece is arranged on the inner layer dam body and covers at least part of the top surface and/or at least part of the inner side surface of the inner layer dam body.
Preferably, the method further comprises the following steps:
the box dam, the box dam sets up in the superiors the upper surface of base plate unit, the box dam includes inlayer dam body and outer layer dam body, the inlayer dam body cover is established in the outer layer dam body, the inlayer dam body is the metal material.
Compared with the prior art, the technical effects of the application at least comprise:
according to the manufacturing method of the packaging structure, the first conducting layer and the second conducting layer can be manufactured in a direct copper plating mode, the first conducting layer and the second conducting layer can also be manufactured in a laser etching or CNC machining mode, when the first conducting layer and the second conducting layer are manufactured in the direct copper plating mode, the advantages of a direct copper plating process and the advantages of a low-temperature co-fired ceramic process can be combined, and the requirements of high line precision and high surface flatness are met while the multilayer packaging structure is manufactured; when first conducting layer and second conducting layer pass through laser etching or the preparation of CNC processing mode, saved the step such as subsides dry film, exposure, development, electroplating thickening, the dry film that removes, remove titanium, copper layer among the manufacture craft of current packaging structure, simplified packaging structure's preparation process greatly, avoided simultaneously because of exposing, developing, electroplating thickening, the pollutant discharge problem that processes such as chemical stripping etching brought, have important meaning to improving packaging structure's quality stability and energy-concerving and environment-protective.
Drawings
The present application is further described below with reference to the drawings and examples.
Fig. 1 is a schematic flow chart illustrating a manufacturing method of a package structure provided in embodiment 1 of the present application.
Fig. 2 is a schematic flow chart of a method for manufacturing a low-temperature co-fired ceramic substrate according to embodiment 1 of the present application.
Fig. 3 is a schematic flow chart of manufacturing the first conductive layer and/or the second conductive layer according to embodiment 1 of the present application.
Fig. 4 is a schematic cross-sectional view of a package structure provided in embodiment 1 of the present application.
Fig. 5 is a schematic flow chart illustrating a manufacturing method of a package structure according to embodiment 2 of the present application.
Fig. 6 is a schematic cross-sectional view of a package structure provided in embodiment 2 of the present application.
Fig. 7 is a schematic cross-sectional view of another package structure provided in embodiment 2 of the present application.
Fig. 8 is a schematic cross-sectional view of another package structure provided in embodiment 2 of the present application.
Fig. 9 is a schematic cross-sectional view of another package structure provided in embodiment 2 of the present application.
Fig. 10 is a schematic cross-sectional view of another package structure provided in embodiment 2 of the present application.
Fig. 11 is a perspective view of a package structure provided in embodiment 2 of the present application.
Fig. 12 is a flowchart illustrating a manufacturing method of a package structure according to embodiment 3 of the present application.
Fig. 13 is a schematic cross-sectional view of a package structure provided in embodiment 3 of the present application.
Fig. 14 is a schematic cross-sectional view of another package structure provided in embodiment 3 of the present application.
Fig. 15 is a schematic cross-sectional view of another package structure provided in embodiment 3 of the present application.
Fig. 16 is a flowchart illustrating a manufacturing method of a package structure according to embodiment 4 of the present application.
Fig. 17 is a schematic cross-sectional view of a package structure provided in embodiment 4 of the present application.
Fig. 18 is a flowchart illustrating a manufacturing method of a package structure according to embodiment 5 of the present application.
Fig. 19 is a schematic cross-sectional view of a package structure provided in embodiment 5 of the present application.
Fig. 20 is a schematic cross-sectional view of another package structure provided in embodiment 5 of the present application.
Fig. 21 is a schematic cross-sectional view of another package structure provided in embodiment 5 of the present application.
Fig. 22 is a flowchart illustrating a manufacturing method of a package structure according to embodiment 6 of the present application.
Fig. 23 is a schematic cross-sectional view of a package structure provided in embodiment 6 of the present application.
In the figure: 10. low-temperature co-fired ceramic substrates; 11. a substrate unit; 12. an electrical conductor; 13. an interlayer conductive layer; 14. a first conductive layer; 15. a second conductive layer; 20. a box dam; 21. a lower dam body; 22. an upper dam body; 23. an inner-layer dam body; 24. an outer layer dam body; 30. a metal member; 31. a first metal member; 32. a second metal piece; 40. an electronic component; 50. a cover body.
Detailed Description
The present application is further described with reference to the accompanying drawings and the detailed description, and it should be noted that, in the present application, the embodiments or technical features described below may be arbitrarily combined to form a new embodiment without conflict.
The words used in this application to describe positions and orientations, such as "up" and "down", are used in the description of the figures, but may be changed as needed and still be within the scope of the present application. The drawings in the present application are only for illustrating the relative positional relationship, and the layer thicknesses in some portions are exaggerated in the drawing for easy understanding, and the layer thicknesses in the drawings do not represent the proportional relationship of the actual layer thicknesses.
Example 1
The embodiment of the application provides a packaging structure and a preparation method thereof.
Referring to fig. 1 to 4, the method for manufacturing a package structure according to the embodiment of the present application includes steps S1 and S2, and may further include step S3.
Step S1: a low temperature co-fired ceramic substrate 10 is provided. The low-temperature co-fired ceramic substrate 10 includes a plurality of stacked substrate units 11, conductors 12 penetrating both upper and lower surfaces of the substrate units 11 are provided on the substrate units 11, an interlayer conductive layer 13 is provided on an upper surface of the substrate unit 11 other than the uppermost layer, and the interlayer conductive layer 13 is not provided on an upper surface of the substrate unit 11 of the uppermost layer.
The material of the electric conductor 12 may include one or more of copper, silver, titanium, chromium, tungsten, nickel or an alloy thereof, the material of the interlayer conductive layer 13 may include one or more of copper, silver, titanium, chromium, tungsten, nickel or an alloy thereof, and the interlayer conductive layers 13 on the upper surfaces of two adjacent substrate units 11 may be conducted through the electric conductor 12. Specifically, the electric conductor 12 and the interlayer conductive layer 13 may be both made of copper materials, and when the two are subjected to thermal shock, the expansion coefficients of the two are matched, so that the two can be prevented from being separated to form a bulge or a bubble due to overlarge thermal stress.
The thickness of the substrate unit 11 may be 0.1mm to 3mm, and the thickness of the substrate unit 11 may be 0.2mm, 0.5mm, 1.5mm, 2mm, 2.8mm, as required; the hole diameter of the via hole may be 0.03 to 3mm, and the thickness of the substrate unit 11 may be 0.05mm, 0.1mm, 0.5mm, 1.5mm, 2mm, 2.8mm, as needed.
In some embodiments of the present application, the low-temperature co-fired ceramic substrate 10 may be obtained from steps S11 to S13.
Step S11: and providing a plurality of green ceramic strips, and forming a via hole penetrating through the upper surface and the lower surface of each green ceramic strip. The green tape can be obtained by the following method: stirring and mixing the low-temperature sintered ceramic powder and the organic carrier, and carrying out tape casting and drying to obtain the green tape. The via holes may be straight holes, angled holes, bent holes, or other shaped holes.
Step S12: conductive material is filled into the via hole of the green tape to form a conductor 12, an interlayer conductive layer 13 is formed on the surface of the green tape other than the uppermost layer, and the interlayer conductive layer 13 is not provided on the green tape of the uppermost layer.
The interlayer conductive layer 13 may be formed by screen printing. In some embodiments of the present application, passive devices, such as capacitors, resistors, inductors, etc., may be formed on the surface of at least one of the green tapes other than the uppermost layer. Thus, multiple functions can be achieved by multiple passive devices.
Step S13: and stacking and hot-pressing a plurality of the green ceramic tapes, and then slicing and low-temperature co-firing the green ceramic tapes to obtain the low-temperature co-fired ceramic substrate 10.
The sintering temperature of the low-temperature co-firing is, for example, 850-.
Compared with a high-temperature co-fired ceramic substrate, the low-temperature co-fired ceramic substrate 10 has a lower sintering temperature (lower than 900 ℃), can adopt metals such as Au, Ag, Cu and the like with high conductivity and low melting point as conductor materials, and can be sintered in an air atmosphere, so that the cost is reduced, and good performance can be obtained. And the low temperature co-fired ceramic substrate 10 is very suitable for application in radio frequency, microwave and millimeter wave devices due to the low dielectric constant and low loss performance at high frequencies of glass ceramics.
Step S2: a first conductive layer 14 is formed on the upper surface of the uppermost substrate unit 11, and a second conductive layer 15 is formed on the lower surface of the lowermost substrate unit 11. The first conductive layer 14 is electrically connected to the conductor 12 in the uppermost substrate unit 11, and the second conductive layer 15 is electrically connected to the conductor 12 in the lowermost substrate unit 11.
The first conductive layer 14 and the second conductive layer 15 are obtained by any one of the following methods:
the first mode is as follows: is obtained by direct copper plating.
In some embodiments of the present application, the method of forming the first conductive layer 14 and/or the second conductive layer 15 on the surface of the substrate unit 11 by direct copper plating may include steps S21 to S24. When the first conductive layer 14 and/or the second conductive layer 15 are/is manufactured by a direct copper plating method, the first conductive layer 14 and/or the second conductive layer 15 are/is a conductive layer made of a copper material.
Step S21: and manufacturing a first conductive film layer on the surface of the substrate unit 11 by adopting a vacuum evaporation mode. The heating mode of vacuum evaporation can be any one of resistance heating, electron beam heating, radio frequency induction heating, arc heating and laser heating.
Step S22: and adhering a dry film on the first conductive film layer, and then carrying out exposure and development treatment on the surface of the substrate unit 11 by using a photomask to obtain a circuit pattern. The dry film may be a polymerizable resin that reacts to ultraviolet rays, and the dry film may be polymerized to form a stable substance attached to the first conductive film layer after being irradiated with ultraviolet rays, thereby achieving the function of blocking plating and etching. The photomask is also called as a mask, a raw material mask substrate of the mask is a photosensitive blank for manufacturing photomask patterns, and the designed patterns are engraved on the mask substrate to manufacture the mask through a photoetching plate making process. Since the portion of the mask having an image cannot transmit ultraviolet rays due to the use of the mask, the portion of the dry film not irradiated with ultraviolet rays cannot be polymerized. The dry film portion which does not generate polymerization can be removed by using a developing solution, and the circuit to be reserved is exposed, so that the circuit pattern manufactured by the step has the characteristics of straightness and flatness.
Step S23: and manufacturing a second conductive film layer on the circuit pattern of the substrate unit 11 by adopting an electroplating mode.
Step S24: the dry film and the first conductive film layer excluding the circuit pattern are removed, resulting in a patterned first conductive layer 14 and/or second conductive layer 15.
The second mode is as follows: and manufacturing a conductive film layer on the surface of the substrate unit 11, and performing laser etching on the conductive film layer or removing part of the conductive film layer by adopting a CNC (computerized numerical control) processing mode according to a preset circuit pattern.
In some embodiments of the present application, a method for fabricating a conductive film layer on a surface of the substrate unit 11 includes:
manufacturing a conductive film layer on the surface of the substrate unit 11 by adopting a vacuum coating mode; or the like, or, alternatively,
firstly, a third conductive film layer is manufactured on the surface of the substrate unit 11 in a vacuum coating mode, then a fourth conductive film layer is manufactured on the third conductive film layer in an electroplating mode, and the third conductive film layer and the fourth conductive film layer form the conductive film layer.
Wherein, the vacuum coating mode can be magnetron sputtering.
The conductive film layer may be a film layer formed of one or more of titanium, copper, chromium, tungsten, nickel, or an alloy thereof, and in some embodiments, the conductive film layer includes a copper metal film layer, the copper metal film layer is a conductive layer, the thickness of the copper metal film layer may be 500nm to 100000nm, and the thickness of the copper metal film layer may be 1000nm, 5000nm, 10000nm, 30000nm, 50000nm, 70000nm, and 90000nm, as required.
In some embodiments, the conductive film layer includes a copper metal film layer, or the conductive film layer includes a titanium metal film layer and a copper metal film layer sequentially formed on the substrate unit 11, the copper metal film layer is a conductive layer, and the titanium metal film layer is used as a primer layer before the copper metal film layer is formed, so that the adhesion between the copper metal film layer and the substrate unit 11 can be increased, and the copper metal film layer and the substrate unit 11 can be combined more firmly. The thickness of the titanium metal film layer can be 100nm-300nm, and the thickness of the titanium metal film layer can be 120nm, 150nm, 180nm, 200nm, 220nm, 250nm and 280nm according to requirements. The thickness of the copper metal film layer can be 500nm-100000nm, and the thickness of the copper metal film layer can be 1000nm, 5000nm, 10000nm, 30000nm, 50000nm, 70000nm and 90000nm according to requirements. Compared with the existing manufacturing process of the ceramic circuit board, the embodiment can directly form a thick conductive film layer on the substrate unit 11.
In some embodiments, when the conductive film layer is formed on the surface of the substrate unit 11 by a vacuum coating method, the vacuum coating method may be magnetron sputtering, and compared with the conventional method of thickening the metal film layer by an electroplating method, the vacuum coating method may reduce pollutant emission and is more environment-friendly.
In some embodiments, when a third conductive film layer is first formed on the surface of the substrate unit 11 by a vacuum plating method and then a fourth conductive film layer is formed on the third conductive film layer by an electroplating method, the vacuum plating method may be magnetron sputtering, the thickness of the fourth conductive film layer may be greater than that of the third conductive film layer, the thickness ratio of the third conductive film layer to the fourth conductive film layer may be adjusted as needed, and the fourth conductive film layer with a larger thickness may be conveniently formed by a mature electroplating method to thicken the third conductive film layer, so as to form the conductive film layer.
In some embodiments, the third conductive film layer includes a titanium conductive layer and/or a first copper conductive layer formed on the substrate unit 11, and the fourth conductive film layer includes a second copper conductive layer. When the third conductive film layer includes a titanium conductive layer and a first copper conductive layer, it is preferable that the titanium conductive layer and the first copper conductive layer are formed in this order on the substrate unit 11. The thickness of the first copper conductive layer may be 100nm to 30000nm, for example 200nm, 1000nm, 3000nm, 5000nm, 10000nm, 20000 nm; the thickness of the titanium conductive layer may be 100nm to 300nm, such as 120nm, 150nm, 180nm, 200nm, 220nm, 250nm, 280 nm; the thickness of the second copper conductive layer may be 400nm to 90000nm, for example 600nm, 1000nm, 3000nm, 5000nm, 10000nm, 30000nm, 50000nm, 60000nm, 80000 nm.
The conductive film layer is directly etched by adopting a laser etching technology to obtain a more accurate circuit pattern, the laser etching can be completed according to the actual requirements of the composition, the thickness, the etching depth and the like of the conductive film layer, the power of the used laser is 1mW-2000W for example, the wavelength is 200nm-3000nm for example, and the laser with different powers and wavelengths is specifically selected for etching according to the etching requirements.
Specifically, the removing of the partial conductive film layer by the CNC processing method may be that a numerical control machine for CNC processing (computer numerical control precision machining) is programmed and controlled according to a preset circuit pattern, a cutting path and cutting parameters of a tool are set, and the partial conductive film layer on the substrate unit 11 is removed according to the preset parameters to obtain the patterned first conductive layer 14 and the patterned second conductive layer 15.
Step S3: a protective film layer is formed on the first conductive layer 14 and/or the second conductive layer 15.
The circuit layer is usually formed by a metal material, and is easy to oxidize and deteriorate after contacting with air, so that the electrical property is reduced, and the reliability of the ceramic circuit board is influenced.
In some embodiments, when the protective film layer comprises silver, fabricating the protective film layer on the patterned circuit layer comprises: the silver film layer is formed on the patterned circuit layer, or the nickel film layer and the silver film layer are sequentially formed on the patterned circuit layer, and the protective film layer containing silver can be formed by using a mask and adopting a vacuum coating method, and the known technology can be specifically adopted, and is not described herein again. When the protective film layer includes silver, the thickness of the protective film layer is 0.1 μm to 5 μm, preferably 0.2 μm to 1 μm.
In some embodiments, when the protective film layer comprises gold, fabricating the protective film layer on the patterned circuit layer comprises: the nickel film layer and the gold film layer are sequentially manufactured on the patterned circuit layer, or the nickel film layer, the palladium film layer and the gold film layer are sequentially manufactured on the patterned circuit layer, and the protective film layer containing gold can be formed by using a mask and adopting a vacuum coating method, and the known technology can be specifically adopted, and is not repeated herein. When the protective film layer includes gold, the thickness of the protective film layer is 0.01 μm to 0.3 μm, preferably 0.025 μm to 0.1 μm.
The manufacturing method of the package structure in the embodiment of the application may further include inspecting the low-temperature co-fired ceramic substrate 10 to obtain a formed ceramic substrate.
According to the manufacturing method of the embodiment of the application, the first conducting layer 14 and the second conducting layer 15 can be manufactured in a direct copper plating mode, the first conducting layer 14 and the second conducting layer 15 can also be manufactured in a laser etching or CNC (computer numerical control) machining mode, when the first conducting layer 14 and the second conducting layer 15 are manufactured in the direct copper plating mode, the advantages of a direct copper plating process and a low-temperature co-fired ceramic process can be combined, and the requirements of high line accuracy and high surface flatness are met while the multilayer ceramic substrate is manufactured; when first conducting layer 14 and second conducting layer 15 pass through laser etching or CNC processing mode preparation, the step such as subsides dry film, exposure, development, electroplating thickening, the dry film that removes, remove titanium, copper layer in having saved the manufacture craft of current ceramic substrate has simplified ceramic substrate's preparation process greatly, has avoided simultaneously because of exposing, developing, electroplating thickening, the pollutant discharge problem that processes such as chemical stripping etching brought, has important meaning to improving ceramic substrate's quality stability and energy-concerving and environment-protective.
Referring to fig. 4, an embodiment of the present application further provides a package structure, and a specific implementation manner of the package structure is consistent with the implementation manner and the achieved technical effect of the method for manufacturing the package structure in this embodiment, and details of the implementation manner and the achieved technical effect are not repeated.
The packaging structure comprises a low-temperature co-fired ceramic substrate 10, wherein the low-temperature co-fired ceramic substrate 10 comprises a plurality of stacked substrate units 11, conductors 12 penetrating through the upper surface and the lower surface of each low-temperature co-fired ceramic substrate 10 unit are arranged on the substrate units 11, an interlayer conducting layer 13 is arranged on the upper surface of each substrate unit 11 except the uppermost layer, and no interlayer conducting layer 13 is arranged on the upper surface of each substrate unit 11 on the uppermost layer;
a first conductive layer 14 is disposed on the upper surface of the uppermost substrate unit 11, a second conductive layer 15 is disposed on the lower surface of the lowermost substrate unit 11, the first conductive layer 14 is electrically connected to the conductor 12 in the uppermost substrate unit 11, the second conductive layer 15 is electrically connected to the conductor 12 in the lowermost substrate unit 11, and the first conductive layer 14 and the second conductive layer 15 are obtained by any one of the following methods:
the copper plating is directly carried out; or the like, or, alternatively,
and manufacturing a conductive film layer on the surface of the substrate unit 11, and performing laser etching on the conductive film layer or removing part of the conductive film layer by adopting a CNC (computerized numerical control) processing mode according to a preset circuit pattern to obtain the conductive film layer.
In some embodiments, the package structure further includes a protective film layer disposed on the first conductive layer 14 and/or the second conductive layer 15, and/or a passive device disposed on at least one of the substrate units 11 except the uppermost layer.
Example 2
Referring to fig. 5 to 11, an embodiment of the present application provides a package structure and a method for manufacturing the package structure, and based on the method for manufacturing the package structure of embodiment 1, the method for manufacturing the package structure of the present embodiment further includes step S4.
Step S4: arranging a dam 20 on the upper surface of the uppermost substrate unit 11, wherein the dam 20 is a plastic dam, and the dam 20 has a top surface, an opposite inner side surface and an opposite outer side surface; a metal piece 30 is provided, and the metal piece 30 is disposed on the box dam 20 and covers at least a part of the top surface and/or at least a part of the inner side surface of the box dam 20.
The box dam 20 is made of plastic materials, and on one hand, compared with the box dam 20 made of metal materials, the box dam 20 is low in cost of the plastic materials; on one hand, the manufacturing method of the box dam 20 is simple, the manufacturing cost is low, the environmental pollution is small, and the box dam is environment-friendly; on one hand, the metal piece 30 covers at least part of the top surface of the box dam 20, so that inorganic packaging conditions can be provided, and the air tightness is good; on one hand, the metal piece 30 covers at least part of the inner side surface of the box dam 20, so that the ultraviolet irradiation tolerance is improved, the metal piece 30 can resist ultraviolet irradiation, the reflectivity is high, the situation that the box dam 20 is damaged due to direct irradiation of ultraviolet rays can be avoided, and the stability and reliability of the overall performance of the box dam 20 are guaranteed; in addition, the metal piece 30 can also enhance the structural strength of the dam 20, and improve the stability of the whole packaging structure.
In one embodiment, the method of providing the dam 20 on the upper surface of the uppermost substrate unit 11 may include: the dam 20 is fabricated first, and the dam 20 is adhered to the upper surface of the uppermost substrate unit 11 by an adhesive.
In one embodiment, the method of providing the dam 20 on the upper surface of the uppermost substrate unit 11 may include: the metal piece 30 is used as a part of a mold for manufacturing the box dam 20, and the box dam 20 is manufactured on the upper surface of the substrate unit 11 on the uppermost layer by adopting an injection molding mode. Therefore, the metal piece 30 can be embedded or embedded in the injection molding process, the metal piece 30 and the box dam 20 can be firmly combined, the two materials are combined without using an adhesive, and the stability of the packaging structure is improved.
In a specific embodiment, the method of disposing the metal piece 30 on the dam 20 may include: the metal piece 30 is adhered to the box dam 20, or the metal piece 30 is manufactured on the box dam 20 by adopting a vacuum coating mode firstly and then an electroplating mode. The metal piece 30 may be adhered after being manufactured by processes such as stamping, or may be manufactured on the box dam 20 in a vacuum coating manner, or may be manufactured on the box dam 20 in a vacuum coating and electroplating manner, so that a suitable manufacturing process may be selected according to requirements in practical application.
Specifically, the metal member 30 may be manufactured first, for example, the metal member 30 is manufactured in advance by a stamping method, and the metal member 30 is adhered to the box dam 20 by an adhesive; or, a thick film is manufactured on the box dam 20 by adopting a vacuum coating mode such as magnetron sputtering, and the obtained thick film is the metal piece 30; or, a metal base layer is first fabricated on the box dam 20 by a vacuum coating method such as magnetron sputtering, and then a metal thickening layer is fabricated on the metal base layer by an electroplating method, where the fabricated metal base layer and metal thickening layer are the metal member 30.
In a specific implementation, the package structure may further include an electronic component 40 and a cover 50. Compared with the existing ceramic box dam and metal box dam, in the packaging structure obtained by the preparation method of the embodiment of the application, the box dam 20 is made of plastic materials, compared with the ceramic box dam, the box dam 20 made of the plastic materials can avoid a high-temperature sintering step during preparation, and compared with the metal box dam, the welding step of the metal kovar ring can be avoided. By arranging the metal piece 30 on the box dam 20, the metal piece 30 can cover at least part of the top surface and/or at least part of the inner side surface of the box dam 20, when the packaging structure needs to weld the cover body 50 on the box dam 20, the metal piece 30 can cover at least part of the top surface of the box dam 20, and the cover body 50 is welded on the metal piece 30; when the packaging structure generates UV light (ultraviolet rays) and the box dam 20 needs to bear UV irradiation, the metal piece 30 can be covered on at least part of the inner side surface of the box dam 20, the UV light generated by the packaging structure is isolated from the box dam 20 made of plastic materials by the metal piece 30, the direct irradiation of the UV light on the box dam 20 is avoided, and the box dam 20 can bear the UV irradiation; when the packaging structure needs to weld the cover body 50 on the dam 20 and needs the dam 20 to resist UV irradiation, the metal piece 30 can be covered on at least part of the top surface and at least part of the inner side surface of the dam 20, and then the cover body 50 is welded on the metal piece 30 on the top surface of the dam 20, and the metal piece 30 on the inner side surface of the dam 20 can resist UV irradiation. The metal member 30 can also enhance the structural strength of the dam 20 and improve the stability of the whole packaging structure. Therefore, the packaging structure of the embodiment of the application can flexibly set the position of the metal piece 30 according to the packaging requirement, overcomes the defects of the existing box dam and meets the packaging requirement.
In a specific embodiment, the metal member 30 may include a first metal member 31 and/or a second metal member 32, and the method of disposing the metal member 30 on the dam 20 and covering at least a part of the top surface and/or at least a part of the inner side surface of the dam 20 may include: the first metal piece 31 is arranged on the dam 20 and covers at least part of the top surface of the dam 20, and/or the second metal piece 32 is arranged on the dam 20 and covers at least part of the inner side surface of the dam 20. In one aspect, providing the first metal piece 31 to cover at least a portion of the top surface of the dam 20 can provide inorganic packaging conditions; on the one hand, the second metal piece 32 is arranged to cover at least part of the inner side of the box dam 20, so as to provide the function of resisting ultraviolet irradiation; in specific implementation, the metal part 30 may be selected according to the requirements of practical applications, for example, the first metal part 31 is used in the case where only inorganic encapsulation is needed, the second metal part 32 is used in the case where only ultraviolet radiation is needed, and the first metal part 31 and the second metal part 32 are used in the case where both inorganic encapsulation and ultraviolet radiation resistance are needed.
In one embodiment, the dam 20 is formed in a ring shape or a frame shape as a whole, the cross-sectional shape of the dam 20 perpendicular to the length direction is rectangular, and the cover 50 is installed over the entire dam 20.
In a specific embodiment, the inner side of the dam 20 may have a step-shaped bearing surface, the bearing surface of the bearing surface is a part of the top surface of the dam 20, and the first metal member 31 is disposed on the dam 20 and covers at least a part of the bearing surface. The packaging structure provides better mounting conditions for the cover body 50 by arranging the stepped bearing part, the cover body 50 for packaging can be mounted on the bearing surface, the movement of the outer side surface of the cover body 50 in the direction parallel to the bearing surface is limited by the bearing part, so that the cover body 50 is not easy to move relative to the box dam 20, the stepped bearing part ensures that the cover body 50 is more stably connected with the box dam 20, larger impact can be resisted, the stability and the service life of the packaging structure are improved, and the air tightness is good.
Referring to fig. 6 to 11, an embodiment of the present application further provides a package structure, and a specific implementation manner of the package structure is consistent with the implementation manner and the achieved technical effect of the method for manufacturing the package structure described in this embodiment, and details of the implementation manner and the technical effect are not repeated.
The package structure includes: the low-temperature co-fired ceramic substrate 10, the dam 20 and the metal piece 30 can further comprise an electronic component 40 and a cover body 50.
The box dam 20 is a plastic box dam, the box dam 20 is disposed on the uppermost layer of the upper surface of the substrate unit 11, and the box dam 20 has a top surface, opposite inner side surfaces, and outer side surfaces. The dam 20 may be generally annular or frame-shaped, and other shapes of the dam 20 may be provided as desired.
The metal piece 30 is disposed on the dam 20 and covers at least a part of the top surface and/or at least a part of the inner side surface of the dam 20. The metal member 30 covers at least part of the top surface of the dam 20, which means that the metal member 30 covers part of the top surface or the whole top surface of the dam 20. The metal member 30 covers at least part of the inner side of the dam 20, which means that the metal member 30 covers part of the inner side or the whole inner side of the dam 20. The material of the metal element 30 may be gold, silver, copper, aluminum or alloy, the metal element 30 may have a sheet-like or film-like structure when the metal element 30 covers at least a part of the top surface or at least a part of the inner side surface of the box dam 20, and the metal element 30 may have a bent sheet-like or film-like structure or two separated sheet-like or film-like structures when the metal element 30 covers at least a part of the top surface and at least a part of the inner side surface of the box dam 20.
The box dam 20 is made of plastic materials, and on one hand, compared with the box dam 20 made of metal materials, the box dam 20 is low in cost of the plastic materials; on one hand, the manufacturing method of the box dam 20 is simple, the manufacturing cost is low, the environmental pollution is small, and the box dam is environment-friendly; in one aspect, inorganic encapsulation conditions may be provided by the metallic member 30 covering at least a portion of the top surface of the dam 20; on one hand, the ultraviolet energy can destroy chemical bonds of polymers to initiate photooxidation or oxidative photodegradation, so that the physical and mechanical properties are deteriorated, and meanwhile, the carbonyl-containing decomposition products and the chromophore are formed to deepen the color change of the polymers, so that at least part of the inner side surface of the dam 20 is covered by the metal piece 30, the tolerance degree of ultraviolet irradiation is improved, the metal piece 30 is resistant to ultraviolet irradiation, the reflectivity is high, the dam 20 can be prevented from being directly irradiated by ultraviolet rays, the structure of the dam 20 is damaged, and the overall performance of the dam 20 is stable and reliable; in addition, the metal piece 30 can also enhance the structural strength of the dam 20, and improve the stability of the whole packaging structure.
In one embodiment, the metallic element 30 may be adhered to the dam 20. The adhesive connection mode has simple process, low cost and convenient popularization.
In a specific embodiment, the metal member 30 may include a first metal member 31 and/or a second metal member 32, the first metal member 31 is disposed on the dam 20 and covers at least a portion of the top surface of the dam 20, and the second metal member 32 is disposed on the dam 20 and covers at least a portion of the inner side surface of the dam 20. The first metal member 31 covers at least part of the top surface of the dam 20, which means that the first metal member 31 covers part of the top surface or the whole top surface of the dam 20. The second metal member 32 covers at least part of the inner side of the dam 20, which means that the second metal member 32 covers part of the inner side or the whole inner side of the dam 20.
On one hand, the first metal piece 31 is arranged to cover at least part of the top surface of the box dam 20, so that inorganic packaging conditions can be provided, and the air tightness is good; in one aspect, the provision of second metal 32 to cover at least a portion of the interior side of dam 20 provides resistance to uv radiation.
In specific implementation, the metal part 30 may be selected according to the requirements of practical applications, for example, the first metal part 31 is used in the case where only inorganic encapsulation is needed (as shown in fig. 6), the second metal part 32 is used in the case where only ultraviolet radiation is needed (as shown in fig. 7), and the first metal part 31 and the second metal part 32 are used in the case where both inorganic encapsulation and ultraviolet radiation resistance are needed (as shown in fig. 8, 9 and 10).
In a specific embodiment, the metal member 30 may include a first metal member 31 and a second metal member 32, and the first metal member 31 and the second metal member 32 may be connected or not connected. Therefore, the first metal piece 31 and the second metal piece 32 which are connected can be provided, and the first metal piece 31 and the second metal piece 32 which are not connected can also be provided, so that the proper part size and the manufacturing process can be selected according to the requirements in practical application, and the application range is wide. For example, when the first metal part 31 and the second metal part 32 are connected, they can be manufactured by the same process, such as stamping, vacuum coating, or vacuum coating plus electroplating; when the first metal part 31 and the second metal part 32 are not connected, the two parts may be manufactured by different processes, for example, the first metal part 31 is manufactured by a stamping method, the second metal part 32 is manufactured by a vacuum coating method, or the first metal part 31 is manufactured by a vacuum coating and electroplating method, and the second metal part 32 is manufactured by a stamping method.
In some embodiments of the present invention, the dam 20 is formed in a ring shape or a frame shape as a whole, the cross-sectional shape of the dam 20 perpendicular to the length direction is rectangular (as shown in fig. 10), and the cover 50 is installed on the whole dam 20.
In some embodiments of the present application, the inner side of the dam 20 may have a step-shaped bearing surface (as shown in fig. 6, 7, 8, and 9), the bearing surface of the bearing surface is a part of the top surface of the dam 20, and the first metal member 31 may be disposed on the dam 20 and cover at least a part of the bearing surface (as shown in fig. 6, 8, and 9). The inner side surface of the supporting portion may be perpendicular to the upper surface of the uppermost substrate unit 11, or may extend downward and inward from the supporting surface to the first surface (as shown in fig. 9). The better installation condition is provided for the cover body 50 by arranging the stepped bearing part, the cover body 50 for packaging can be installed on the bearing surface, and the movement of the outer side surface of the cover body 50 in the direction parallel to the bearing surface is limited by the bearing part, so that the cover body 50 is not easy to move relative to the box dam 20, the stepped bearing part ensures that the connection between the cover body 50 and the box dam 20 is more stable, larger impact can be resisted, the stability and the service life of the packaging structure are improved, and the air tightness is good.
In some embodiments of the present application, the package structure may further include an electronic component 40 and a cover 50, the electronic component 40 is disposed on the upper surface of the uppermost substrate unit 11 and electrically connected to the first conductive layer 14, the electronic component 40 may be electrically connected to the first conductive layer 14 by a wire or a soldering method, and the cover 50 is disposed on the dam 20 to encapsulate the electronic component 40. The cover 50 may be adhered to the dam 20 by an adhesive, and preferably, the cover 50 and the metal member 30 may be welded together on the top surface of the dam 20. Lid 50 and metalwork 30 adopt the welding mode to be connected, compare with the bonding mode, and the heat resistance is good, and ageing resistance is strong, and the reliability is high, realizes packaging structure's airtight encapsulation through the welding, and the product gas tightness is better. Therefore, different electronic elements 40 can be used in the packaging structure according to the requirements in practical application, and various electronic devices such as an image sensor and an LED lamp bead are manufactured, so that the application range is wide.
The electronic component 40 may be a front-mounted chip, a flip chip, a vertical chip, or other functional components, for example, when the product corresponding to the package structure is an image sensor, the electronic component 40 in the package structure may be one or more of functional components such as a sensor chip and a sensing component, and the cover 50 may be a transparent cover glass; when the product corresponding to the package structure is a laser, the electronic component 40 in the package structure may be a laser chip, and the cover 50 may be a lens; when the product corresponding to the package structure is an LED module, the electronic component 40 in the package structure may be an LED chip, and the cover 50 may be a transparent cover glass.
Therefore, different electronic elements 40 can be used in the packaging structure according to the requirements in practical application, so that various electronic devices such as an image sensor and an LED can be manufactured, and the application range is wide.
Example 3
Referring to fig. 11 to 15, the present embodiment provides a package structure and a method for manufacturing the same, and based on the method for manufacturing the package structure of embodiment 1, the method for manufacturing the package structure of the present embodiment further includes step S5.
Step S5: arranging a dam 20 on the upper surface of the substrate unit 11 on the uppermost layer, wherein the dam 20 comprises a lower dam body 21 and an upper dam body 22, the lower dam body 21 is arranged on the upper surface of the substrate unit 11 on the uppermost layer, the lower dam body 21 is made of plastic, the lower dam body 21 is provided with a top surface, an opposite inner side surface and an outer side surface, and the upper dam body 22 is arranged on the top surface of the lower dam body 21 and forms a stepped structure; providing a metal piece 30, wherein the metal piece 30 is arranged on the lower layer dam body 21 and covers at least part of the top surface and/or at least part of the inner side surface of the lower layer dam body 21.
The dam 20 may be generally annular or frame-shaped, and other shapes of the dam 20 may be provided as desired. The dam 20 comprises a lower layer dam 21 and an upper layer dam 22, the lower layer dam 21 and the upper layer dam 22 can be respectively and independently annular or frame-shaped, and the lower layer dam 21 and the upper layer dam 22 can be arranged in other shapes according to requirements. The thickness of the box dam 20 and the thickness ratio of the lower dam 21 to the upper dam 22 may be set as required, and the thickness ratio of the lower dam 21 to the upper dam 22 is, for example, 5: (1-5). In a practical application, the thickness ratio of the lower dam 21 to the upper dam 22 is 5: 1; in another practical application, the thickness ratio of the lower dam 21 to the upper dam 22 is 5: 3. in general, the thickness direction refers to a direction perpendicular to the upper surface of the substrate unit 11.
The metal piece 30 covers at least part of the top surface of the lower dam 21, which means that the metal piece 30 covers part of the top surface or all of the top surface of the lower dam 21; the metal member 30 covers at least part of the inner side surface of the lower dam 21, which means that the metal member 30 covers part of the inner side surface or the whole inner side surface of the lower dam 21.
Compared with the prior art, the preparation method of the packaging structure provided by the embodiment of the application has better technical effects, and specifically comprises the following steps:
compared with a ceramic dam, the lower-layer dam body 21 made of the plastic material can avoid a high-temperature sintering step during preparation, and the manufacturing cost is low;
compared with a metal dam, the plastic material has the advantages of low cost, simple manufacturing method, low manufacturing cost, small pollution to the environment and environmental protection;
compared with a plastic dam, the dam 20 is divided into a lower dam body 21 and an upper dam body 22 by adopting a modular design concept, a user can independently manufacture the upper dam body 22 and the lower dam body 21 with various sizes by adopting the same or different processes according to the requirements in practical application, and the whole dam 20 is formed by adhering two dam bodies or manufacturing two dam bodies in sequence and the like, so that the preparation process of the dam 20 is more flexible, and the application range is wide; inorganic packaging conditions may be provided by the metallic member 30 covering at least a portion of the top surface of the dam 20; at least part of the inner side surface of the box dam 20 is covered by the metal piece 30, so that the ultraviolet irradiation tolerance degree is improved, the metal piece 30 can resist ultraviolet irradiation, the reflectivity is high, the situation that the box dam 20 is damaged due to direct irradiation of ultraviolet rays can be avoided, and the stability and reliability of the overall performance of the box dam 20 are guaranteed; in addition, the metal piece 30 can also enhance the structural strength of the dam 20, and improve the stability of the whole packaging structure.
In a specific implementation, the method of disposing the lower dam 21 on the upper surface of the uppermost substrate unit 11 in step S5 may be any one of the following three methods.
The first mode is as follows: and adhering the lower dam 21 to the upper surface of the uppermost substrate unit 11. The lower layer dam body 21 can be adhered to the first surface, and the adhering connection mode is simple in process, low in cost and convenient to popularize. Specifically, the lower dam 21 may be formed in advance by injection molding or the like, and the lower dam 21 may be attached to the upper surface of the uppermost substrate unit 11 by an adhesive.
The second mode is as follows: the metal piece 30 is used as a part of a mold for manufacturing the lower dam 21, and the lower dam 21 is manufactured on the upper surface of the substrate unit 11 on the uppermost layer by adopting an injection molding mode. Specifically, a half die for manufacturing the lower dam 21 may be disposed on the uppermost layer of the upper surface of the substrate unit 11, the combination of the half die and the metal member 30 and the uppermost layer of the upper surface of the substrate unit 11 is used as a die for manufacturing the lower dam 21, molten plastic is injected into the die, the lower dam 21 is formed after cooling, the half die is removed, the lower dam 21 is connected with the metal member 30 into a whole, and the lower dam 21 is adhered to the uppermost layer of the upper surface of the substrate unit 11.
The third mode is as follows: the metal piece 30 is embedded into a mold for manufacturing the lower-layer dam body 21, the metal piece 30 and the lower-layer dam body 21 are integrally connected through manufacturing in an injection molding mode, and the metal piece 30 and the lower-layer dam body 21 are integrally connected and arranged on the uppermost layer of the upper surface of the substrate unit 11. Specifically, in the injection molding process of the lower dam 21, the metal member 30 is embedded in a mold for manufacturing the lower dam 21, molten plastic is injected into the mold, and the lower dam 21 is formed after cooling, and the lower dam 21 and the metal member 30 are connected integrally.
The lower dam body 21 can be manufactured in an injection molding mode, the injection molding process is high in production speed and efficiency, and automation of operation can be achieved. The metal piece 30 is used as a part of a mold for manufacturing the lower dam body 21 or the metal piece 30 is embedded into the mold in the injection molding process of the lower dam body 21, so that the metal piece 30 and the lower dam body 21 can be firmly combined without using an adhesive, and the stability of the packaging structure is improved.
In one embodiment, the upper dam 22 may be made of metal. The upper dam body 22 is made of metal, so that the structural strength of the whole dam 20 can be improved.
In a specific implementation, the method for disposing the upper dam 22 on the top surface of the lower dam 21 in step S5 may include any one of the following methods.
The first mode is as follows: and adhering the upper layer dam body 22 to the top surface of the lower layer dam body 21. The upper layer dam body 22 can be adhered to the top surface of the lower layer dam body 21, and the adhering connection mode is simple in process, low in cost and convenient to popularize. Specifically, the upper dam 22 may be fabricated, for example, the upper dam 22 may be fabricated in advance by press forming, and the upper dam 22 may be adhered to the top surface of the lower dam 21 by an adhesive.
The second mode is as follows: and manufacturing the upper-layer dam body 22 on the top surface of the lower-layer dam body 21 in a vacuum coating mode. The upper-layer dam body 22 can also be manufactured in a vacuum film plating mode, compared with the manufacturing mode of vacuum film plating and electroplating thickening, the method has no pollution to the environment, and the width size of the dam body obtained through preparation is not limited. And manufacturing a thick film on the top surface of the lower-layer dam body 21 by adopting a vacuum coating mode such as magnetron sputtering, wherein the obtained thick film is the upper-layer dam body 22.
The third mode is as follows: and firstly, manufacturing the upper-layer dam body 22 on the top surface of the lower-layer dam body 21 in a vacuum coating mode and then in an electroplating mode. The upper dam body 22 can also be manufactured by adopting a vacuum coating and electroplating mode, and the manufacturing mode has mature process and wide application. Specifically, a metal base layer is first fabricated on the top surface of the lower dam 21 by a vacuum deposition method such as magnetron sputtering, and then a metal thickening layer is fabricated on the metal base layer by an electroplating method, where the fabricated metal base layer and metal thickening layer are the upper dam 22.
In one embodiment, the upper dam 22 may be made of plastic. The upper dam body 22 is made of plastic, and compared with a metal material, the manufacturing method is simple and the manufacturing cost is low.
In a specific implementation, the method for disposing the upper dam 22 on the top surface of the lower dam 21 in step S5 may include any one of the following three methods.
The first mode is as follows: and adhering the upper layer dam body 22 to the top surface of the lower layer dam body 21. The upper layer dam body 22 can be adhered to the top surface of the lower layer dam body 21, and the adhering connection mode is simple in process, low in cost and convenient to popularize. Specifically, the upper-layer dam 22 is separately manufactured by injection molding or the like, and then the upper-layer dam 22 is adhered to the top surface of the lower-layer dam 21.
The second mode is as follows: and taking the lower-layer dam body 21 as a part of a mold for manufacturing the upper-layer dam body 22, and manufacturing the upper-layer dam body 22 on the top surface of the lower-layer dam body 21 by adopting an injection molding mode. Specifically, a half mold for manufacturing the upper dam 22 may be placed on the top surface of the lower dam 21, the half mold and the lower dam 21 are combined to form a mold for manufacturing the upper dam 22, molten plastic is injected into the mold, the upper dam 22 is formed after cooling, the half mold is removed, and the upper dam 22 and the top surface of the lower dam 21 are connected into a whole to form the dam 20.
The third mode is as follows: and embedding the lower layer dam body 21 into a mold for manufacturing the upper layer dam body 22, and manufacturing the lower layer dam body 21 and the upper layer dam body 22 which are connected into a whole by adopting an injection molding mode. Specifically, in the injection molding process of the upper dam 22, the lower dam 21 is embedded in a mold for manufacturing the upper dam 22, molten plastic is injected into the mold, the upper dam 22 is formed after cooling, the upper dam 22 and the lower dam 21 are connected into a whole, and the mold is removed, so that the dam 20 is obtained.
The upper dam body 22 can be manufactured in an injection molding mode, the injection molding process is high in production speed and efficiency, and automation of operation can be achieved. The lower dam 21 is used as a part of a mold for manufacturing the upper dam 22 or the lower dam 21 is embedded into the mold in the injection molding process of the upper dam 22, so that the lower dam 21 and the upper dam 22 can be firmly combined, the two dams do not need to be combined by using an adhesive, and the stability of the packaging structure is improved.
In a specific implementation, the method for disposing the metal member 30 on the lower dam body 21 of the box dam 20 may include any one of the following three methods.
The first mode is as follows: adhering the metal piece 30 to the lower dam 21. The metal piece 30 can be adhered to the top surface of the lower layer dam body 21, and the adhering connection mode is simple in process, low in cost and convenient to popularize.
The second mode is as follows: and manufacturing the metal piece 30 on the lower layer dam body 21 by adopting a vacuum coating mode. The metal piece 30 can also be manufactured in a vacuum coating mode, and compared with the manufacturing mode of vacuum film coating and electroplating thickening, the method has no pollution to the environment, and the width size of the dam body obtained by preparation is not limited.
The third mode is as follows: and manufacturing the metal piece 30 on the lower layer dam body 21 by adopting a vacuum coating mode and then an electroplating mode. The metal piece 30 can also be manufactured by adopting a vacuum coating and electroplating mode, and the manufacturing mode has mature process and wide application.
The above method for disposing the metal member 30 on the lower dam 21 of the dam 20 may be implemented in a manner similar to that of disposing the lower dam 21 on the upper surface of the uppermost substrate unit 11 when the lower dam 21 is made of a metal material, and will not be described herein again.
In a specific implementation, the metal piece 30 may include a first metal piece 31 and/or a second metal piece 32; the method for disposing the metal member 30 on the lower dam 21 and covering at least a part of the top surface and/or at least a part of the inner side surface of the lower dam 21 may include: the first metal piece 31 is arranged on the lower layer dam body 21 and covers at least part of the top surface of the lower layer dam body 21, and/or the second metal piece 32 is arranged on the lower layer dam body 21 and covers at least part of the inner side surface of the lower layer dam body 21.
Therefore, the first metal piece 31 is arranged to cover at least part of the top surface of the box dam 20, so that inorganic packaging conditions can be provided, and the air tightness is good; the second metal piece 32 is arranged to cover at least part of the inner side of the box dam 20, so that the function of resisting ultraviolet radiation can be provided; in specific implementation, the metal part 30 may be selected according to the requirements of practical applications, for example, the first metal part 31 is used in the case where only inorganic encapsulation is needed, the second metal part 32 is used in the case where only ultraviolet radiation is needed, and the first metal part 31 and the second metal part 32 are used in the case where both inorganic encapsulation and ultraviolet radiation resistance are needed.
In a specific implementation, the method for disposing the metal member 30 on the lower dam 21 and covering at least a part of the top surface and/or at least a part of the inner side surface of the lower dam 21 may further include: a part of the first metal member 31 is disposed between the top surface of the lower dam 21 and the upper dam 22.
A part of the first metal piece 31 is arranged between the top surface of the lower dam 21 and the upper dam 22, so that the upper dam 22 can be arranged on the part of the first metal piece 31 and/or the top surface of the lower dam 21, the manufacturing process of the whole dam 20 is more flexible, and the personalized and diversified requirements of users are met, especially when the upper dam 22 is made of metal material, the upper dam 22 can be directly welded on the first metal piece 31 or the upper dam 22 is manufactured by electroplating through the first metal piece 31. In addition, when the upper-layer dam 22 is made of a metal material, the upper-layer dam 22 may be manufactured by a vacuum coating method, or the upper-layer dam 22 may be manufactured by a vacuum coating method and a plating method.
In addition, when the upper dam 22 is made of plastic material, the upper dam 22 may be adhered to the portion of the first metal member 31 and/or the top surface of the lower dam 21; when the upper dam 22 is manufactured by injection molding, the part of the first metal part 31 and/or the top surface of the lower dam 21 may be used as a part of a mold for manufacturing the upper dam 22.
In a specific implementation, the first metal member 31 may cover the entire top surface of the lower dam 21. The first metal piece 31 covers the whole top surface of the lower dam 21, so that the upper dam 22 can be arranged on the first metal piece 31, and particularly when the upper dam 22 is made of metal, the upper dam 22 can be directly welded on the first metal piece 31 or can be manufactured by electroplating through the first metal piece 31.
In addition, when the upper dam 22 is made of plastic material, the upper dam 22 may be adhered to the portion of the first metal member 31; when the upper dam 22 is manufactured by injection molding, the part of the first metal part 31 may be used as a part of a mold for manufacturing the upper dam 22.
Referring to fig. 11, 13 to 15, an embodiment of the present application further provides a package structure, and a specific implementation manner of the package structure is consistent with the implementation manner and the achieved technical effect of the method for manufacturing the package structure described in the embodiment, and a part of the contents are not described again.
The package structure includes: the low-temperature co-fired ceramic substrate 10, the dam 20 and the metal piece 30 can further comprise an electronic component 40 and a cover body 50.
The dam 20 comprises a lower dam body 21 and an upper dam body 22, the lower dam body 21 is arranged on the upper surface of the uppermost substrate unit 11, the lower dam body 21 is made of plastic, the lower dam body 21 is provided with a top surface, an opposite inner side surface and an outer side surface, and the upper dam body 22 is arranged on the top surface of the lower dam body 21 and forms a stepped structure; the metal piece 30 is arranged on the lower layer dam body 21 and covers at least part of the top surface and/or at least part of the inner side surface of the lower layer dam body 21.
Compared with a ceramic dam, the lower-layer dam body 21 made of the plastic material can avoid a high-temperature sintering step during preparation, and the manufacturing cost is low; compared with a metal dam, the plastic material has the advantages of low cost, simple manufacturing method, low manufacturing cost, small pollution to the environment and environmental protection; compared with a plastic dam, the dam 20 is divided into a lower dam body 21 and an upper dam body 22 by adopting a modular design concept, a user can independently manufacture the upper dam body 22 and the lower dam body 21 with various sizes by adopting the same or different processes according to the requirements in practical application, and the whole dam 20 is formed by adhering two dam bodies or manufacturing two dam bodies in sequence and the like, so that the preparation process of the dam 20 is more flexible, and the application range is wide; inorganic packaging conditions may be provided by the metallic member 30 covering at least a portion of the top surface of the dam 20; at least part of the inner side surface of the box dam 20 is covered by the metal piece 30, so that the ultraviolet irradiation tolerance degree is improved, the metal piece 30 can resist ultraviolet irradiation, the reflectivity is high, the situation that the box dam 20 is damaged due to direct irradiation of ultraviolet rays can be avoided, and the stability and reliability of the overall performance of the box dam 20 are guaranteed; in addition, the metal piece 30 can also enhance the structural strength of the plastic dam and improve the stability of the whole packaging structure.
The material of the upper dam body 22 is not limited, and the material of the upper dam body 22 can be flexibly selected according to the packaging requirement.
In one embodiment, the upper dam 22 may be made of metal or plastic. The upper dam body 22 can be made of metal, so that the structural strength of the whole box dam 20 can be improved; the upper dam 22 may be made of plastic, which is simpler and less expensive to manufacture than metal.
In a specific implementation, the upper dam 22 may be adhered to the top surface of the lower dam 21. The upper layer dam body 22 can be adhered to the top surface of the lower layer dam body 21, and the adhering connection mode is simple in process, low in cost and convenient to popularize.
In a specific implementation, the metal element 30 may include a first metal element 31 and/or a second metal element 32, where the first metal element 31 may be disposed on the lower dam 21 and cover at least a part of a top surface of the lower dam 21, and the second metal element 32 may be disposed on the lower dam 21 and cover at least a part of an inner side surface of the lower dam 21. The first metal piece 31 is arranged to cover at least part of the top surface of the box dam 20, so that inorganic packaging conditions can be provided, and the air tightness is good; the second metal piece 32 is arranged to cover at least part of the inner side of the box dam 20, so that the function of resisting ultraviolet radiation can be provided; in specific implementation, the metal part 30 may be selected according to the requirements of practical applications, for example, the first metal part 31 is used in the case where only inorganic encapsulation is needed (as shown in fig. 13), the second metal part 32 is used in the case where only ultraviolet radiation is needed (as shown in fig. 14), and the first metal part 31 and the second metal part 32 are used in the case where both inorganic encapsulation and ultraviolet radiation resistance are needed (as shown in fig. 15).
In a specific implementation, a portion of the first metal 31 may be disposed between the top surface of the lower dam 21 and the upper dam 22. A part of the first metal piece 31 is arranged between the top surface of the lower dam 21 and the upper dam 22, and therefore the upper dam 22 can be arranged on the part of the first metal piece 31 and/or the top surface of the lower dam 21, so that the whole manufacturing process of the box dam 20 is more flexible, the personalized and diversified requirements of users are met, particularly when the upper dam 22 is made of metal, the upper dam can be directly welded on the first metal piece 31 or electroplated by using the first metal piece 31, the manufacturing method is simple, the manufacturing efficiency is high, and the manufacturing cost is low.
In a specific implementation, the first metal member 31 may cover the entire top surface of the lower dam 21. The first metal piece 31 covers the whole top surface of the lower dam 21, so that the upper dam 22 can be arranged on the first metal piece 31, and particularly when the upper dam 22 is made of metal, the upper dam 22 can be directly welded on the first metal piece 31 or can be manufactured by electroplating through the first metal piece 31.
In a specific implementation, the metal member 30 may include a first metal member 31 and a second metal member 32, and the first metal member 31 and the second metal member 32 may be connected or not connected. The first metal piece 31 and the second metal piece 32 which are connected can be provided, and the first metal piece 31 and the second metal piece 32 which are not connected can also be provided, so that the proper part size and the manufacturing process can be selected according to the requirements in practical application, and the application range is wide. For example, when the first metal part 31 and the second metal part 32 are connected, they can be manufactured by the same process, such as stamping, vacuum coating, or vacuum coating plus electroplating; when the first metal part 31 and the second metal part 32 are not connected, the two parts may be manufactured by different processes, for example, the first metal part 31 is manufactured by a stamping method, the second metal part 32 is manufactured by a vacuum coating method, or the first metal part 31 is manufactured by a vacuum coating and electroplating method, and the second metal part 32 is manufactured by a stamping method.
In a specific implementation, the metal piece 30 may be adhered to the lower dam 21. The metal piece 30 can be adhered to the top surface of the lower layer dam body 21, and the adhering connection mode is simple in process, low in cost and convenient to popularize.
In a specific implementation, the substrate 10 may be a ceramic substrate. The ceramic substrate has the characteristics of mature manufacturing process, high cost performance, wide application, good high temperature resistance, corrosion resistance, high thermal conductivity, high mechanical strength, matching of thermal expansion coefficient with chip materials and the like.
The package structure may further include an electronic component 40 and a cover 50, wherein the electronic component 40 is disposed on the upper surface of the uppermost substrate unit 11 and electrically connected to the first conductive layer 14, and the cover 50 is disposed on the lower dam 21 to package the electronic component 40.
On one hand, different electronic elements 40 can be used in the packaging structure according to the requirements in practical application to manufacture various electronic devices such as an image sensor, an LED and the like, so that the application range is wide; on the other hand, in the prior art, the cover 50 is often installed on the whole dam 20, the cover 50 is easy to loosen and may shift or even fall off on the dam 20, the package structure is provided with two layers of stepped dams to provide better installation conditions for the cover 50, the cover 50 for packaging can be installed on the lower layer dam 21, and the movement of the outer side surface of the cover 50 in the direction parallel to the top surface of the lower layer dam 21 is limited by the upper layer dam 22, so that the cover 50 is not easy to move relative to the dam 20, the stepped dam 20 enables the connection between the cover 50 and the dam 20 to be more stable, and can resist greater impact, improve the stability and the service life of the package structure, and has good air tightness.
In a specific implementation, the cover 50 may be welded to the metal member 30 at the top surface of the lower dam 21. Lid 50 adopts the welding mode with the part that is located the top surface of lower floor dam body 21 of metalwork 30 to be connected, and the welded connected mode belongs to inorganic encapsulation, compares with the bonding mode, and the heat resistance is good, and ageing resistance is strong, and the reliability is high, and realizes packaging structure's airtight encapsulation through the welding, and the product gas tightness is better.
In a specific implementation, the cross-sectional shape of the lower dam 21 along the direction perpendicular to the extending direction of the dam 20 may be a trapezoid or a rectangle. The structure can effectively improve the stability of the packaging structure, and a user can set the section into a trapezoid shape, a rectangular shape or other shapes according to the requirements in practical application, so that the requirements of specific implementation are flexibly met.
Example 4
Referring to fig. 11, 16, and 17, the present embodiment provides a package structure and a method for manufacturing the same, and based on the method for manufacturing the package structure of embodiment 1, the method for manufacturing the package structure of the present embodiment further includes step S6.
Step S6: at the superiors the upper surface of base plate unit 11 sets up box dam 20, box dam 20 includes lower floor's dam 21 and upper dam 22, lower floor's dam 21 sets up at the superiors the upper surface of base plate unit 11, lower floor's dam 21 is the metal material, lower floor's dam 21 has top surface, relative medial surface and lateral surface, upper dam 22 sets up on the dam 21 top surface of lower floor and form the stair structure.
The dam 20 may be generally annular or frame-shaped, and other shapes of the dam 20 may be provided as desired. The dam 20 comprises a lower layer dam 21 and an upper layer dam 22, the lower layer dam 21 and the upper layer dam 22 can be respectively and independently annular or frame-shaped, and the lower layer dam 21 and the upper layer dam 22 can be arranged in other shapes according to requirements. The thickness of the box dam 20 and the thickness ratio of the lower dam 21 to the upper dam 22 may be set as required, and the thickness ratio of the lower dam 21 to the upper dam 22 is, for example, 5: (1-5). In a practical application, the thickness ratio of the lower dam 21 to the upper dam 22 is 5: 1; in another practical application, the thickness ratio of the lower dam 21 to the upper dam 22 is 5: 3.
in a specific implementation, the package structure may further include an electronic component 40 and a cover 50.
Compared with the prior art, the preparation method of the packaging structure provided by the embodiment of the application has better technical effects, and specifically comprises the following steps:
compared with a ceramic dam, the lower-layer dam body 21 made of the metal material can avoid a high-temperature sintering step during preparation, and the manufacturing cost is low;
compared with a metal enclosing dam, the enclosing dam 20 is divided into a lower layer dam body 21 and an upper layer dam body 22 by adopting a modular design concept, a user can independently manufacture the upper layer dam body 22 and the lower layer dam body 21 with various sizes by adopting the same or different processes according to the requirements in practical application, and the whole enclosing dam 20 is formed by adhering and welding two layers of dam bodies or sequentially manufacturing two layers of dam bodies, so that the preparation process of the enclosing dam 20 is more flexible, the application range is wide, and the strength is basically the same as or equivalent to that of the metal enclosing dam;
compare the plastic box dam, metal material's lower floor dam body 21 can provide inorganic encapsulation condition, when packaging structure need set up lid 50 on box dam 20, can weld lid 50 on lower floor dam body 21, and the gas tightness is better, and when packaging structure produced UV light, metal material's lower floor dam body 21 can effectively tolerate the UV and shine, and in addition, metal material's lower floor dam body 21 is higher than the intensity of plastic box dam, can improve whole packaging structure's stability.
In a specific implementation, the method of disposing the lower dam 21 on the upper surface of the uppermost substrate unit 11 in step S6 may be any one of the following three methods.
The first mode is as follows: and adhering the lower dam 21 to the upper surface of the uppermost substrate unit 11. The lower layer dam body 21 can be adhered to the first surface, and the adhering connection mode is simple in process, low in cost and convenient to popularize. Specifically, the lower dam 21 may be formed first, the lower dam 21 may be formed in advance by, for example, press forming, and the lower dam 21 may be attached to the upper surface of the uppermost substrate unit 11 by an adhesive.
The second mode is as follows: and manufacturing the lower dam body 21 on the upper surface of the substrate unit 11 on the uppermost layer by adopting a vacuum coating mode. The lower layer dam body 21 can also be manufactured in a vacuum coating mode, compared with the manufacturing mode of vacuum film coating and electroplating thickening, the method has no pollution to the environment, and the width size of the dam body obtained by preparation is not limited. A thick film is formed on the upper surface of the uppermost substrate unit 11 by a vacuum deposition method such as magnetron sputtering, and the obtained thick film is the lower dam 21.
The third mode is as follows: the lower dam 21 is formed on the upper surface of the uppermost substrate unit 11 by a vacuum plating method and then by an electroplating method. The lower dam body 21 can also be manufactured by adopting a vacuum coating and electroplating mode, and the manufacturing mode has mature process and wide application. Specifically, a metal base layer is first fabricated on the upper surface of the uppermost substrate unit 11 by a vacuum deposition method, such as magnetron sputtering, and then a metal thickening layer is fabricated on the metal base layer by an electroplating method, where the fabricated metal base layer and metal thickening layer are the lower dam 21.
In one embodiment, the upper dam 22 may be made of metal. The upper dam body 22 is made of metal, so that the structural strength of the whole dam 20 can be improved.
In a specific implementation, the method for disposing the upper dam 22 on the top surface of the lower dam 21 in step S6 may be any one of the following four methods.
The first mode is as follows: and adhering or welding the upper layer dam body 22 to the top surface of the lower layer dam body 21. The upper layer dam body 22 can be adhered to the top surface of the lower layer dam body 21, and the adhering connection mode is simple in process, low in cost and convenient to popularize. Specifically, the upper dam 22 may be fabricated, for example, the upper dam 22 may be fabricated in advance by press forming, and the upper dam 22 may be adhered to the top surface of the lower dam 21 by an adhesive. The upper layer dam 22 can also be welded on the top surface of the lower layer dam 21, the welding connection mode belongs to inorganic packaging, and the air tightness is good. Specifically, the upper dam 22 may be fabricated, for example, the upper dam 22 may be fabricated in advance by press forming, and then the upper dam 22 may be welded to the top surface of the lower dam 21.
The second mode is as follows: and manufacturing the upper-layer dam body 22 on the top surface of the lower-layer dam body 21 in a vacuum coating mode. The upper-layer dam body 22 can also be manufactured in a vacuum coating mode, compared with the manufacturing mode of vacuum film coating and electroplating thickening, the method has no pollution to the environment, and the width size of the dam body obtained through preparation is not limited. And manufacturing a thick film on the top surface of the lower-layer dam body 21 by adopting a vacuum coating mode such as magnetron sputtering, wherein the obtained thick film is the upper-layer dam body 22.
The third mode is as follows: and manufacturing the upper-layer dam body on the top surface of the lower-layer dam body in an electroplating mode. The upper layer dam body 22 can also be manufactured in an electroplating mode, the top surface of the lower layer dam body 21 made of metal materials is effectively utilized for electroplating, compared with a vacuum coating and electroplating mode, the method saves process steps and improves manufacturing efficiency. And manufacturing a metal film layer on the top surface of the lower dam body 21 in an electroplating mode, wherein the manufactured metal film layer is the upper dam body 22.
The fourth mode is that: and firstly, manufacturing the upper-layer dam body 22 on the top surface of the lower-layer dam body 21 in a vacuum coating mode and then in an electroplating mode. The upper dam body 22 can also be manufactured by adopting a vacuum coating and electroplating mode, and the manufacturing mode has mature process and wide application. Specifically, a metal base layer is first fabricated on the top surface of the lower dam 21 by a vacuum deposition method such as magnetron sputtering, and then a metal thickening layer is fabricated on the metal base layer by an electroplating method, where the fabricated metal base layer and metal thickening layer are the upper dam 22.
In one embodiment, the upper dam 22 may be made of plastic. The upper dam body 22 is made of plastic, and compared with a metal material, the manufacturing method is simple and the manufacturing cost is low.
In a specific implementation, the method for disposing the upper dam 22 on the top surface of the lower dam 21 in step S6 may be any one of the following three methods.
The first mode is as follows: and adhering the upper layer dam body 22 to the top surface of the lower layer dam body 21. The upper layer dam body 22 can be adhered to the top surface of the lower layer dam body 21, and the adhering connection mode is simple in process, low in cost and convenient to popularize. Specifically, the upper-layer dam 22 is separately manufactured by injection molding or the like, and then the upper-layer dam 22 is adhered to the top surface of the lower-layer dam 21.
The second mode is as follows: and taking the lower-layer dam body 21 as a part of a mold for manufacturing the upper-layer dam body 22, and manufacturing the upper-layer dam body 22 on the top surface of the lower-layer dam body 21 by adopting an injection molding mode. The injection molding process has high production speed and high efficiency, and can realize automation in operation. Specifically, a half mold for manufacturing the upper dam 22 may be placed on the top surface of the lower dam 21, the half mold and the lower dam 21 are combined to form a mold for manufacturing the upper dam 22, molten plastic is injected into the mold, the upper dam 22 is formed after cooling, the half mold is removed, and the upper dam 22 and the top surface of the lower dam 21 are connected into a whole to form the dam 20.
The third mode is as follows: and embedding the lower layer dam body 21 into a mold for manufacturing the upper layer dam body 22, and manufacturing the lower layer dam body 21 and the upper layer dam body 22 which are connected into a whole by adopting an injection molding mode. Specifically, in the injection molding process of the upper dam 22, the lower dam 21 is embedded in a mold for manufacturing the upper dam 22, molten plastic is injected into the mold, the upper dam 22 is formed after cooling, the upper dam 22 and the lower dam 21 are connected into a whole, and the mold is removed, so that the dam 20 is obtained.
The second mode and the third mode can firmly combine the lower layer dam body 21 with the upper layer dam body 22, and the two layers of dam bodies are combined without using an adhesive, so that the stability of the packaging structure is improved. The two modes can effectively utilize the manufactured lower dam body 21, compared with the mode of firstly manufacturing the upper dam body 22 and then adhering, the manufacturing process is simplified, and the adhesion between the upper dam body 22 and the lower dam body 21 is better.
Referring to fig. 11 and 17, an embodiment of the present application further provides a package structure, and a specific implementation manner of the package structure is consistent with the implementation manner and the achieved technical effect of the method for manufacturing the package structure described in this embodiment, and details of a part of the implementation manner and the achieved technical effect are not repeated.
The package structure includes: the low-temperature co-fired ceramic substrate 10, the dam 20, and may further include an electronic component 40 and a cover 50.
Dam 20, dam 20 includes lower floor's dam 21 and upper dam 22, lower floor's dam 21 sets up at the superiors the upper surface of base plate unit 11, lower floor's dam 21 is the metal material, lower floor's dam 21 has top surface, relative medial surface and lateral surface, upper dam 22 sets up lower floor's dam 21's top surface forms the stair structure.
Compared with a ceramic dam, the lower-layer dam body 21 made of the metal material can avoid a high-temperature sintering step during preparation, and the manufacturing cost is low; compared with a metal enclosing dam, the enclosing dam 20 is divided into a lower layer dam body 21 and an upper layer dam body 22 by adopting a modular design concept, a user can independently manufacture the upper layer dam body 22 and the lower layer dam body 21 with various sizes by adopting the same or different processes according to the requirements in practical application, and the whole enclosing dam 20 is formed by adhering and welding two layers of dam bodies or sequentially manufacturing two layers of dam bodies, so that the preparation process of the enclosing dam 20 is more flexible, the application range is wide, and the strength is basically the same as or equivalent to that of the metal enclosing dam; compare the plastic box dam, metal material's lower floor dam body 21 can provide inorganic encapsulation condition, when packaging structure need set up lid 50 on box dam 20, can weld lid 50 on lower floor dam body 21, and the gas tightness is better, and when packaging structure produced UV light, metal material's lower floor dam body 21 can effectively tolerate the UV and shine, and in addition, metal material's lower floor dam body 21 is higher than the intensity of plastic box dam, can improve whole packaging structure's stability.
The material of the upper dam body 22 is not limited, and the material of the upper dam body 22 can be flexibly selected according to the packaging requirement.
In one embodiment, the upper dam 22 may be made of metal. The upper dam body 22 is made of metal, so that the structural strength of the whole dam 20 can be improved. As an example, the material of the upper dam 22 may be gold, silver, copper, aluminum, or an alloy.
In a specific implementation, the upper dam 22 may be adhered or welded to the top surface of the lower dam 21. The upper layer dam body 22 can be adhered to the top surface of the lower layer dam body 21, and the adhering connection mode is simple in process, low in cost and convenient to popularize; the upper layer dam 22 can also be welded on the top surface of the lower layer dam 21, the welding connection mode belongs to inorganic packaging, and the air tightness is good.
In one embodiment, the upper dam 22 may be made of plastic. The upper dam body 22 is made of plastic, and compared with a metal material, the manufacturing method is simple and the manufacturing cost is low. As an example, the material of the upper dam 22 may be made of synthetic resin or natural resin.
In a specific implementation, the upper dam 22 may be adhered to the top surface of the lower dam 21. The upper layer dam body 22 can be adhered to the top surface of the lower layer dam body 21, and the adhering connection mode is simple in process, low in cost and convenient to popularize.
The package structure may further include an electronic component 40 and a cover 50, wherein the electronic component 40 is disposed on an upper surface of the uppermost substrate unit 11 and electrically connected to the first conductive layer 14, and the cover 50 is disposed on the lower dam 21 to package the electronic component 40.
On one hand, different electronic elements 40 can be used in the packaging structure according to the requirements in practical application to manufacture various electronic devices such as an image sensor, an LED lamp bead and the like, so that the application range is wide; on the other hand, in the prior art, the cover 50 is often installed on the whole dam 20, the cover 50 is easy to loosen and may shift or even fall off on the dam 20, the package structure is provided with two layers of stepped dams to provide better installation conditions for the cover 50, the cover 50 for packaging can be installed on the lower layer dam 21, and the movement of the outer side surface of the cover 50 in the direction parallel to the top surface of the lower layer dam 21 is limited by the upper layer dam 22, so that the cover 50 is not easy to move relative to the dam 20, the stepped dam 20 enables the connection between the cover 50 and the dam 20 to be more stable, and can resist greater impact, improve the stability and the service life of the package structure, and the air tightness is good.
The manner of attachment between the cover 50 and the box dam 20 is not limited in this application, and the cover 50 may be adhered to the box dam 20, preferably to the underlying dam 21, by an adhesive.
In one embodiment, the cover 50 may be welded to the top surface of the lower dam 21. Lid 50 adopts welding mode to be connected with the top surface of lower floor dam body 21, and welded connection mode belongs to inorganic encapsulation, compares with bonding mode, and the heat resistance is good, and ageing resistance is strong, and the reliability is high, and realizes packaging structure's airtight encapsulation through the welding, and the product gas tightness is better.
In a specific implementation, the cross-sectional shape of the lower dam 21 along the direction perpendicular to the extending direction of the dam 20 may be a trapezoid or a rectangle. The structure can effectively improve the stability of the packaging structure, and a user can set the section into a trapezoid shape, a rectangular shape or other shapes according to the requirements in practical application, so that the requirements of specific implementation are flexibly met.
Example 5
Referring to fig. 11, 18 to 21, the present embodiment provides a package structure and a method for manufacturing the same, and based on the method for manufacturing the package structure of embodiment 1, the method for manufacturing the package structure of the present embodiment further includes step S7.
Step S7: arranging a dam 20 on the upper surface of the substrate unit 11 on the uppermost layer, wherein the dam 20 comprises an inner-layer dam 23 and an outer-layer dam 24, the inner-layer dam 23 is sleeved in the outer-layer dam 24, the inner-layer dam 23 is made of plastic, and the inner-layer dam 23 is provided with a top surface, an opposite inner side surface and an opposite outer side surface;
providing a metal member 30, wherein the metal member 30 is disposed on the inner layer dam 23 and covers at least a part of the top surface and/or at least a part of the inner side surface of the inner layer dam 23.
The dam 20 may be generally annular or frame-shaped, and other shapes of the dam 20 may be provided as desired. The dam 20 includes an inner dam 23 and an outer dam 24, the inner dam 23 and the outer dam 24 may be respectively and independently annular or frame-shaped, and the inner dam 23 and the outer dam 24 may be configured in other shapes as needed. The thickness of the box dam 20 and the thickness ratio of the inner dam 23 to the outer dam 24 may be set as required, and the thickness ratio of the inner dam 23 to the outer dam 24 is, for example, 1:1, 1:2, 1:3, 1:4, 1:5, 2:1, 3:1, 4:1, 5:1, 2:3, 2:5, 3:4, 4:3, 5: 2.
In some embodiments of the present disclosure, the method of providing the inner dam 23 on the upper surface of the uppermost substrate unit 11 includes: the upper surface of the substrate unit 11 with the inner layer dam 23 adhered to the uppermost layer, or the metal piece 30 is used as a part of a mold for manufacturing the inner layer dam 23, the inner layer dam 23 is manufactured on the upper surface of the substrate unit 11 on the uppermost layer in an injection molding mode, or the metal piece 30 is buried in the mold for manufacturing the inner layer dam 23, the metal piece 30 and the inner layer dam 23 which are connected into a whole are manufactured in an injection molding mode, and the metal piece 30 and the inner layer dam 23 which are connected into a whole are arranged on the upper surface of the substrate unit 11 on the uppermost layer. Specifically, the inner-layer dam 23 may be manufactured first, and the inner-layer dam 23 is adhered to the upper surface of the uppermost substrate unit 11 by an adhesive, or the metal member 30 may be disposed on the upper surface of the uppermost substrate unit 11, another half mold for manufacturing the inner-layer dam 23 may be disposed on the upper surface of the uppermost substrate unit 11, the half mold may be combined with the metal member 30 and the upper surface of the uppermost substrate unit 11 to form a mold for manufacturing the inner-layer dam 23, molten plastic may be injected into the mold, the inner-layer dam 23 may be formed after cooling, the other half mold may be removed, and the embedded inner-layer dam 23 and the metal member 30 may be obtained, or, in the injection molding process of the inner-layer dam 23, the metal member 30 may be embedded into the mold for manufacturing the inner-layer dam 23, the molten plastic may be injected into the mold, the metal member 30 and the inner-layer dam 23 may be formed as a single body after cooling, the mold is removed, and the metal member 30 and the inner-layer dam 23 which are integrally connected are arranged on the upper surface of the uppermost substrate unit 11.
The inner layer dam 23 is sleeved in the outer layer dam 24, the inner layer dam 23 is provided with a top surface, an opposite inner side surface and an outer side surface, and the outer layer dam 24 is provided with a top surface, an opposite inner side surface and an outer side surface. The inner dam 23 and the outer dam 24 may be adjacent or not, preferably, the inner dam 23 and the outer dam 24 are adjacent, and when the inner dam 23 and the outer dam 24 are adjacent, the outer side surface of the inner dam 23 is attached to the inner side surface of the outer dam 24, so that the strength and the air tightness of the dam are improved.
In some embodiments of the present application, the top surface of the inner-layer dam 23 is lower than the top surface of the outer-layer dam 24 and forms a step structure, and the cover 50 may be disposed on the top surface of the inner-layer dam 23 when the step-structure dam 20 is packaged. In the prior art, the cover body 50 is often installed on the whole dam, the cover body 50 is easy to loosen and may be translated or even fall off on the dam 20, the package structure provides a better installation condition for the cover body 50 by arranging the stepped dam 20, the cover body 50 for packaging can be installed on the top surface of the inner-layer dam 23, and the movement of the cover body 50 in the plane direction is limited by the outer-layer dam 24, so that the cover body 50 is not easy to move relative to the dam 20, the stepped dam 20 enables the connection between the cover body 50 and the dam 20 to be more stable, and can resist greater impact, improve the stability and the service life of the package structure, and the air tightness is good.
In some embodiments, the cross-sectional shape of the portion of the dam 20 below the top surface of the inner-layer dam 23 along the direction perpendicular to the extending direction of the dam 20 is trapezoidal or rectangular, which can effectively improve the stability of the package structure.
The inner dam 23 is made of plastic, and the inner dam 23 is made of synthetic resin or natural resin, for example.
Referring to fig. 19 to 21, a metal element 30 is disposed on the inner-layer dam 23 and covers at least a part of the top surface and/or at least a part of the inner side surface of the inner-layer dam 23, in the package structure of fig. 19, the metal element 30 covers at least a part of the top surface of the inner-layer dam 23, in the package structure of fig. 20, the metal element 30 covers at least a part of the inner side surface of the inner-layer dam 23, and in the package structure of fig. 21, the metal element 30 covers at least a part of the top surface and at least a part of the inner side surface of the inner.
The metal member 30 may be adhered to the inner-layer dam 23 by an adhesive, the adhering connection method is simple in process, low in cost and convenient to popularize, the material of the metal member 30 may be gold, silver, copper, aluminum or alloy, the metal member 30 may be in a sheet-like or film-like structure, when the metal member 30 covers at least part of the top surface or at least part of the inner side surface of the inner-layer dam 23, the metal member 30 may be in a sheet-like or film-like structure, the metal member 30 covers at least part of the top surface and at least part of the inner side surface of the inner-layer dam 23, and the metal member 30 may be in a bent sheet-like or film-like structure.
In some embodiments of the present disclosure, a method of disposing a metal member 30 on an inner dam 23 includes: adhering the metal piece 30 to the inner-layer dam 23, or manufacturing the metal piece 30 on the inner-layer dam 23 by adopting a vacuum coating mode firstly and then adopting an electroplating mode. Specifically, the metal element 30 may be fabricated first, for example, the metal element 30 is fabricated in advance by a stamping method, the metal element 30 is adhered to the inner-layer dam 23 by an adhesive, or a thick film is fabricated on the inner-layer dam 23 by a vacuum coating method such as magnetron sputtering, and the obtained thick film is the metal element 30, or a metal base layer is fabricated on the inner-layer dam 23 by a vacuum coating method such as magnetron sputtering, and then a metal thickening layer is fabricated on the metal base layer by an electroplating method, and the fabricated metal base layer and the metal thickening layer are the metal element 30.
Compare with current ceramic box dam, metal box dam, the plastic box dam, packaging structure's box dam 20 of this application embodiment includes inlayer dam 23 and outer dam 24, inlayer dam 23 is the plastic material, compare the ceramic box dam, the high temperature sintering step can be avoided when preparing to the inlayer dam 23 of plastic material, it can avoid passing through metal kovar ring welding step to compare the metal box dam, the box dam 20 of this application adopts the theory of modularized design, can be according to the demand in the practical application, adopt the inlayer dam 23 and the outer dam 24 of the multiple size of the same or different technology preparation separately, make box dam 20's preparation process more nimble. By arranging the metal piece 30 on the inner-layer dam body 23, the metal piece 30 can cover at least part of the top surface and/or at least part of the inner side surface of the inner-layer dam body 23, when the cover body 50 of the packaging structure needs to be welded on the dam 20, the metal piece 30 can cover at least part of the top surface of the inner-layer dam body 23, and the cover body 50 is welded on the metal piece 30; when the packaging structure generates UV light and the dam 20 needs to resist UV irradiation, the metal piece 30 can be covered on at least part of the inner side surface of the inner-layer dam body 23, the UV light generated by the packaging structure is isolated from the inner-layer dam body 23 made of plastic materials by the metal piece 30, the UV light is prevented from directly irradiating the inner-layer dam body 23, and the dam 20 can resist UV irradiation; when the packaging structure needs to weld the cover 50 on the dam 20 and needs the dam 20 to resist UV irradiation, the metal member 30 may be covered on at least part of the top surface and at least part of the inner side surface of the inner-layer dam 23, and then the cover 50 is welded on the metal member 30 located on the top surface of the inner-layer dam 23, and the metal member 30 on the inner side surface of the inner-layer dam 23 plays a role in resisting UV irradiation. The metal member 30 can also enhance the structural strength of the dam 20 and improve the stability of the whole packaging structure. Therefore, the packaging structure of the embodiment of the application can flexibly set the position of the metal piece 30 according to the packaging requirement, overcomes the defects of the existing box dam and meets the packaging requirement.
The metal member 30 preferably covers the entire top surface of the inner layer dam 23, and when the cover 50 is welded to the metal member 30, the inner layer dam 23 is prevented from being damaged by the welding heat. The metal member 30 preferably covers the entire inner side surface of the inner-layer dam 23, and when the package structure generates UV light and the dam 20 needs to withstand UV irradiation, the metal member 30 can shield all the UV light from damaging the inner-layer dam 23, thereby further improving the performance of the package structure for withstanding UV irradiation.
In some embodiments of the present disclosure, the outer-layer dam 24 is made of a metal material, which can improve the strength of the outer-layer dam 24, and the material of the outer-layer dam 24 may be gold, silver, copper, aluminum, or alloy. The method for arranging the outer dam 24 on the upper surface of the uppermost substrate unit 11 comprises the following steps: the outer-layer dam 24 is adhered to the upper surface of the uppermost substrate unit 11, or the outer-layer dam 24 is manufactured on the upper surface of the uppermost substrate unit 11 in a vacuum coating mode firstly and then in an electroplating mode. The vacuum coating method is, for example, magnetron sputtering.
When the outer-layer dam 24 is made of a metal material, the following method may be adopted to provide the inner-layer dam 23 on the upper surface of the substrate unit 11 on the uppermost layer: the outer-layer dam 24 is used as a part of a mold for manufacturing the inner-layer dam 23, the inner-layer dam 23 is manufactured on the upper surface of the uppermost substrate unit 11 in an injection molding mode, or the outer-layer dam 24 is embedded in the mold for manufacturing the inner-layer dam 23, the outer-layer dam 24 and the inner-layer dam 23 which are connected into a whole are manufactured in an injection molding mode, and the outer-layer dam 24 and the inner-layer dam 23 which are connected into a whole are arranged on the upper surface of the uppermost substrate unit 11. Specifically, an outer-layer dam 24 made of a metal material is arranged on the upper surface of the uppermost substrate unit 11, the other half mold for manufacturing the inner-layer dam 23 is placed on the upper surface of the uppermost substrate unit 11, the half mold, the outer-layer dam 24 and part of the upper surface of the uppermost substrate unit 11 are combined to form a mold for manufacturing the inner-layer dam 23, molten plastic is injected into the mold, the inner-layer dam 23 is formed after cooling, the other half mold is removed, the inner-layer dam 23 and the upper surface of the uppermost substrate unit 11 and the outer-layer dam 24 are integrally connected, the inner-layer dam 23 and the outer-layer dam 24 are embedded and formed to form the dam 20, or in the injection molding process of the inner-layer dam 23, the mold for manufacturing the inner-layer dam 23 is embedded with the outer-layer dam 24, the molten plastic is injected into the mold, the outer-layer dam 24 and the dam 23 which are integrally connected after cooling, the mold is removed to obtain the dam 20, and the outer layer dam 24 and the inner layer dam 23 connected as one body are disposed on the upper surface of the uppermost substrate unit 11. The method can effectively utilize the manufactured outer-layer dam body 24, compared with a mode of firstly manufacturing the inner-layer dam body 23 and then adhering, the manufacturing process is simplified, and the adhesiveness between the inner-layer dam body 23 and the outer-layer dam body 24 and between the inner-layer dam body 23 and the substrate 10 is better.
In some embodiments of the present disclosure, the outer dam 24 is made of plastic, and the manufacturing cost of the dam 20 can be reduced, and the outer dam 24 is made of plastic, such as synthetic resin or natural resin. When the outer-layer dam 24 is made of plastic, the following method may be adopted to dispose the outer-layer dam 24 on the upper surface of the substrate unit 11 on the uppermost layer: adhering the outer-layer dam 24 to the upper surface of the uppermost substrate unit 11, or using the inner-layer dam 23 as a part of a mold for manufacturing the outer-layer dam 24, and manufacturing the outer-layer dam 24 on the upper surface of the uppermost substrate unit 11 by adopting an injection molding mode; or, the inner-layer dam 23 is embedded into a mold for manufacturing the outer-layer dam 24, the integrally connected inner-layer dam 23 and outer-layer dam 24 are manufactured by adopting an injection molding mode, and the integrally connected inner-layer dam 23 and outer-layer dam 24 are arranged on the upper surface of the uppermost substrate unit 11. Specifically, the outer-layer dam 24 is adhered to the upper surface of the uppermost substrate unit 11 by an adhesive, or the inner-layer dam 23 is disposed on the upper surface of the uppermost substrate unit 11, another half mold for manufacturing the outer-layer dam 24 is disposed on the upper surface of the uppermost substrate unit 11, the half mold is combined with the inner-layer dam 23 and the upper surface of the uppermost substrate unit 11 to form a mold for manufacturing the outer-layer dam 24, molten plastic is injected into the mold, the outer-layer dam 24 is formed after cooling, the other half mold is removed, the outer-layer dam 24 is integrally connected with the upper surface of the uppermost substrate unit 11 and the inner-layer dam 23, the inner-layer dam 23 and the outer-layer dam 24 are embedded and molded to form the dam 20, or the inner-layer dam 23 is embedded into the mold for manufacturing the outer-layer dam 24 in the injection molding process of the outer-layer dam 24, injecting molten plastic into the mold, cooling to form an inner dam 23 and an outer dam 24 which are connected into a whole, removing the mold to obtain the dam 20, and arranging the inner dam 23 and the outer dam 24 which are connected into a whole on the upper surface of the substrate unit 11 at the uppermost layer.
In some embodiments of the present disclosure, the metal member 30 includes the first metal member 31 and/or the second metal member 32, and the following method may be adopted to dispose the metal member 30 on the inner-layer dam 23 and cover at least a part of the top surface and/or at least a part of the inner side surface of the inner-layer dam 23: first metal 31 is disposed on inner dam 23 and covers at least a portion of a top surface of inner dam 23, and/or second metal 32 is disposed on inner dam 23 and covers at least a portion of an inner side surface of inner dam 23. The first metal member 31 and the second metal member 32 may be disposed on the inner-layer dam 23 in an adhesion manner, or disposed on the inner-layer dam 23 in a vacuum coating manner and then in an electroplating manner. The vacuum coating method is, for example, magnetron sputtering.
In some embodiments of the present disclosure, referring to fig. 19-21, metal 30 includes a first metal 31 and/or a second metal 32, where the first metal 31 is disposed on inner layer dam 23 and covers at least a portion of a top surface of inner layer dam 23, and the second metal 32 is disposed on inner layer dam 23 and covers at least a portion of an inner side surface of inner layer dam 23. The metal part 30 is arranged to include the first metal part 31 and/or the second metal part 32, the first metal part 31 and the second metal part 32 can be manufactured separately according to the requirement, and the first metal part 31 and the second metal part 32 are arranged on the inner dam 23 according to the packaging requirement. In one embodiment, the metal member 30 includes a first metal member 31 and a second metal member 32, and the first metal member 31 and the second metal member 32 are connected or not connected. The size and the manufacturing process of the part can be selected according to the requirements in practical application, and the application range is wide. For example, when the first metal part 31 and the second metal part 32 are connected, they can be manufactured by the same process, such as stamping, vacuum coating, or vacuum coating plus electroplating; when the first metal part 31 and the second metal part 32 are not connected, the two parts may be manufactured by different processes, for example, the first metal part 31 is manufactured by a stamping method, the second metal part 32 is manufactured by a vacuum coating method, or the first metal part 31 is manufactured by a vacuum coating and electroplating method, and the second metal part 32 is manufactured by a stamping method.
Referring to fig. 11, 19 to 21, an embodiment of the present application further provides a package structure, and a specific implementation manner of the package structure is consistent with the implementation manner and the achieved technical effect of the method for manufacturing the package structure described in the embodiment, and a part of the contents are not described again.
The package structure includes: the low-temperature co-fired ceramic substrate 10, the dam 20 and the metal piece 30 can further comprise an electronic component 40 and a cover body 50.
The box dam 20 is disposed on the upper surface of the uppermost substrate unit 11, and the box dam 20 may be annular or frame-shaped as a whole, and the box dam 20 may be disposed in other shapes as needed. The dam 20 includes an inner dam 23 and an outer dam 24, the inner dam 23 and the outer dam 24 may be respectively and independently annular or frame-shaped, and the inner dam 23 and the outer dam 24 may be configured in other shapes as needed. The thickness of the box dam 20 and the thickness ratio of the inner dam 23 to the outer dam 24 may be set as required, and the thickness ratio of the inner dam 23 to the outer dam 24 is, for example, 1:1, 1:2, 1:3, 1:4, 1:5, 2:1, 3:1, 4:1, 5:1, 2:3, 2:5, 3:4, 4:3, 5: 2.
The inner layer dam 23 is sleeved in the outer layer dam 24, the inner layer dam 23 is provided with a top surface, an opposite inner side surface and an outer side surface, and the outer layer dam 24 is provided with a top surface, an opposite inner side surface and an outer side surface. The inner dam 23 and the outer dam 24 may be adjacent or not, preferably, the inner dam 23 and the outer dam 24 are adjacent, and when the inner dam 23 and the outer dam 24 are adjacent, the outer side surface of the inner dam 23 is attached to the inner side surface of the outer dam 24, so that the strength and the air tightness of the dam are improved.
In some embodiments of the present application, the top surface of the inner-layer dam 23 is lower than the top surface of the outer-layer dam 24 and forms a step structure, and the cover 50 may be disposed on the top surface of the inner-layer dam 23 when the step-structure dam 20 is packaged. In the prior art, the cover body 50 is often installed on the whole dam, the cover body 50 is easy to loosen and may be translated or even fall off on the dam 20, the package structure provides a better installation condition for the cover body 50 by arranging the stepped dam 20, the cover body 50 for packaging can be installed on the top surface of the inner-layer dam 23, and the movement of the cover body 50 in the plane direction is limited by the outer-layer dam 24, so that the cover body 50 is not easy to move relative to the dam 20, the stepped dam 20 enables the connection between the cover body 50 and the dam 20 to be more stable, and can resist greater impact, improve the stability and the service life of the package structure, and the air tightness is good.
In some embodiments, the cross-sectional shape of the portion of the dam 20 below the top surface of the inner-layer dam 23 along the direction perpendicular to the extending direction of the dam 20 is trapezoidal or rectangular, which can effectively improve the stability of the package structure.
The inner dam 23 is made of plastic, and the inner dam 23 is made of synthetic resin or natural resin, for example.
Referring to fig. 19 to 21, a metal element 30 is disposed on the inner-layer dam 23 and covers at least a part of the top surface and/or at least a part of the inner side surface of the inner-layer dam 23, in the package structure of fig. 19, the metal element 30 covers at least a part of the top surface of the inner-layer dam 23, in the package structure of fig. 20, the metal element 30 covers at least a part of the inner side surface of the inner-layer dam 23, and in the package structure of fig. 21, the metal element 30 covers at least a part of the top surface and at least a part of the inner side surface of the inner.
The metal member 30 may be adhered to the inner-layer dam 23 by an adhesive, the adhering connection method is simple in process, low in cost and convenient to popularize, the material of the metal member 30 may be gold, silver, copper, aluminum or alloy, the metal member 30 may be in a sheet-like or film-like structure, when the metal member 30 covers at least part of the top surface or at least part of the inner side surface of the inner-layer dam 23, the metal member 30 may be in a sheet-like or film-like structure, the metal member 30 covers at least part of the top surface and at least part of the inner side surface of the inner-layer dam 23, and the metal member 30 may be in a bent sheet-like or film-like structure.
Compare with current ceramic box dam, metal box dam, plastic box dam, the box dam 20 of packaging structure of the embodiment of this application includes inlayer dam 23 and outer dam 24, and inlayer dam 23 is the plastic material, compares the ceramic box dam, and the high temperature sintering step can be avoided when preparing to the inlayer dam 23 of plastic material, compares the metal box dam and can avoid through metal kovar ring welding step. By arranging the metal piece 30 on the inner-layer dam body 23, the metal piece 30 can cover at least part of the top surface and/or at least part of the inner side surface of the inner-layer dam body 23, when the cover body 50 of the packaging structure needs to be welded on the dam 20, the metal piece 30 can cover at least part of the top surface of the inner-layer dam body 23, and the cover body 50 is welded on the metal piece 30; when the packaging structure generates UV light and the dam 20 needs to resist UV irradiation, the metal piece 30 can be covered on at least part of the inner side surface of the inner-layer dam body 23, the UV light generated by the packaging structure is isolated from the inner-layer dam body 23 made of plastic materials by the metal piece 30, the UV light is prevented from directly irradiating the inner-layer dam body 23, and the dam 20 can resist UV irradiation; when the packaging structure needs to weld the cover 50 on the dam 20 and needs the dam 20 to resist UV irradiation, the metal member 30 may be covered on at least part of the top surface and at least part of the inner side surface of the inner-layer dam 23, and then the cover 50 is welded on the metal member 30 located on the top surface of the inner-layer dam 23, and the metal member 30 on the inner side surface of the inner-layer dam 23 plays a role in resisting UV irradiation. The metal member 30 can also enhance the structural strength of the dam 20 and improve the stability of the whole packaging structure. Therefore, the packaging structure of the embodiment of the application can flexibly set the position of the metal piece 30 according to the packaging requirement, overcomes the defects of the existing box dam and meets the packaging requirement.
The metal member 30 preferably covers the entire top surface of the inner layer dam 23, and when the cover 50 is welded to the metal member 30, the inner layer dam 23 is prevented from being damaged by the welding heat. The metal member 30 preferably covers the entire inner side surface of the inner-layer dam 23, and when the package structure generates UV light and the dam 20 needs to withstand UV irradiation, the metal member 30 can shield all the UV light from damaging the inner-layer dam 23, thereby further improving the performance of the package structure for withstanding UV irradiation.
In some embodiments of the present application, the outer dam 24 is made of metal or plastic, the metal can improve the strength of the outer dam 24, the outer dam 24 made of plastic can reduce the manufacturing cost of the dam 20, and the material of the outer dam 24 can be flexibly selected according to the packaging requirements. The outer dam 24 may be made of gold, silver, copper, aluminum, or an alloy, and the outer dam 24 made of a plastic material may be made of synthetic resin or natural resin, for example.
In some embodiments of the present disclosure, referring to fig. 19-21, metal 30 includes a first metal 31 and/or a second metal 32, where the first metal 31 is disposed on inner layer dam 23 and covers at least a portion of a top surface of inner layer dam 23, and the second metal 32 is disposed on inner layer dam 23 and covers at least a portion of an inner side surface of inner layer dam 23. The metal part 30 is arranged to include the first metal part 31 and/or the second metal part 32, the first metal part 31 and the second metal part 32 can be manufactured separately according to the requirement, and the first metal part 31 and the second metal part 32 are arranged on the inner dam 23 according to the packaging requirement. In one embodiment, the metal member 30 includes a first metal member 31 and a second metal member 32, and the first metal member 31 and the second metal member 32 are connected or not connected. The size and the manufacturing process of the part can be selected according to the requirements in practical application, and the application range is wide. For example, when the first metal part 31 and the second metal part 32 are connected, they can be manufactured by the same process, such as stamping, vacuum coating, or vacuum coating plus electroplating; when the first metal part 31 and the second metal part 32 are not connected, the two parts may be manufactured by different processes, for example, the first metal part 31 is manufactured by a stamping method, the second metal part 32 is manufactured by a vacuum coating method, or the first metal part 31 is manufactured by a vacuum coating and electroplating method, and the second metal part 32 is manufactured by a stamping method.
In some embodiments of the present application, the package structure may further include an electronic component 40 and a cover 50, the electronic component 40 is disposed on the upper surface of the uppermost substrate unit 11 and electrically connected to the first conductive layer 14, the electronic component 40 may be electrically connected to the first conductive layer 14 by a wire or a soldering method, and the cover 50 is disposed on the dam 20 to encapsulate the electronic component 40. The cover 50 may be adhered to the dam 20, preferably to the inner dam 23, by an adhesive, and as a preferred mode, the cover 50 is welded to the metal member 30 on the top surface of the inner dam 23, so as to achieve the hermetic package of the package structure by welding, and the product is more airtight.
The electronic component 40 may be a front-mounted chip, a flip chip, a vertical chip, or other functional components, for example, when the product corresponding to the package structure is an image sensor, the electronic component 40 in the package structure may be one or more of functional components such as a sensor chip and a sensing component, and the cover 50 may be a transparent cover glass; when the product corresponding to the package structure is a laser, the electronic component 40 in the package structure may be a laser chip, and the cover 50 may be a lens; when the product corresponding to the package structure is an LED module, the electronic component 40 in the package structure may be an LED chip, and the cover 50 may be a transparent cover glass.
Example 6
Referring to fig. 11, 22 and 23, the present embodiment provides a package structure and a method for manufacturing the same, and based on the method for manufacturing the package structure of embodiment 1, the method for manufacturing the package structure of the present embodiment further includes step S8.
Step S8: the upper surface of the substrate unit 11 on the uppermost layer is provided with a surrounding dam 20, the surrounding dam 20 comprises an inner-layer dam body 23 and an outer-layer dam body 24, the inner-layer dam body 23 is sleeved in the outer-layer dam body 24, and the inner-layer dam body 23 is made of metal materials.
The dam 20 may be generally annular or frame-shaped, and other shapes of the dam 20 may be provided as desired. The dam 20 includes an inner dam 23 and an outer dam 24, the inner dam 23 and the outer dam 24 may be respectively and independently annular or frame-shaped, and the inner dam 23 and the outer dam 24 may be configured in other shapes as needed. The thickness of the box dam 20 and the thickness ratio of the inner dam 23 to the outer dam 24 may be set as required, and the thickness ratio of the inner dam 23 to the outer dam 24 is, for example, 1:1, 1:2, 1:3, 1:4, 1:5, 2:1, 3:1, 4:1, 5:1, 2:3, 2:5, 3:4, 4:3, 5: 2.
The inner layer dam 23 is sleeved in the outer layer dam 24, the inner layer dam 23 is provided with a top surface, an opposite inner side surface and an outer side surface, and the outer layer dam 24 is provided with a top surface, an opposite inner side surface and an outer side surface. The inner dam 23 and the outer dam 24 may be adjacent or not, preferably, the inner dam 23 and the outer dam 24 are adjacent, and when the inner dam 23 and the outer dam 24 are adjacent, the outer side surface of the inner dam 23 is attached to the inner side surface of the outer dam 24, so that the strength and the air tightness of the dam are improved. In some embodiments of the present application, the outer side surface of the inner dam 23 is adhered to the inner side surface of the outer dam 24 by an adhesive, and the adhering connection mode has a simple process, low cost and convenient popularization.
In some embodiments of the present disclosure, the method of providing the inner dam 23 on the upper surface of the uppermost substrate unit 11 includes: the inner-layer dam 23 is adhered to the upper surface of the uppermost substrate unit 11, or the inner-layer dam 23 is manufactured on the upper surface of the uppermost substrate unit 11 in a vacuum coating mode firstly and then in an electroplating mode. Specifically, the inner dam 23 may be manufactured first, for example, the inner dam 23 is manufactured in advance by a punch forming method, the inner dam 23 is adhered to the upper surface of the uppermost substrate unit 11 and/or the inner side surface of the outer dam 24 by an adhesive, or a thick film is manufactured on the upper surface of the uppermost substrate unit 11 by a vacuum coating method such as magnetron sputtering, the obtained thick film is the inner dam 23, or a metal base layer is manufactured on the upper surface of the uppermost substrate unit 11 by a vacuum coating method such as magnetron sputtering, and then a metal thickening layer is manufactured on the metal base layer by an electroplating method, and the manufactured metal base layer and the metal thickening layer are the inner dam 23.
In some embodiments of the present application, the package structure may further include an electronic component 40 and a cover 50, a top surface of the inner dam 23 is lower than a top surface of the outer dam 24 and forms a stepped structure, and when the step-structured dam 20 is packaged, the cover 50 may be disposed on the top surface of the inner dam 23, in the prior art, the cover 50 is often mounted on the whole dam, and the cover 50 is easily loosened and may be shifted or even fall off on the dam 20, in the package structure, the step-shaped dam 20 provides a better mounting condition for the cover 50, the cover 50 for packaging may be mounted on the top surface of the inner dam 23, and the movement of the cover 50 in the plane direction thereof is limited by the outer dam 24, so that the cover 50 is not easy to move relative to the dam 20, and the step-shaped dam 20 makes the connection between the cover 50 and the dam 20 more stable and able to resist greater impact, the stability and the life of packaging structure are improved, and the gas tightness is good.
In some embodiments, the cross-sectional shape of the portion of the dam 20 below the top surface of the inner-layer dam 23 along the direction perpendicular to the extending direction of the dam 20 is trapezoidal or rectangular, which can effectively improve the stability of the package structure.
The inner dam 23 is made of metal, for example, the outer dam 24 may be made of gold, silver, copper, aluminum or alloy, the inner dam 23 made of metal not only facilitates welding of the cover 50, but also can withstand UV irradiation, and the inner dam 23 made of metal can also improve the strength of the dam 20.
Compared with the existing ceramic dam, metal dam and plastic dam, in the packaging structure obtained by the preparation method of the embodiment of the application, the dam 20 comprises an inner layer dam 23 and an outer layer dam 24, and the inner layer dam 23 is made of metal. Compared with the ceramic dam, the inner-layer dam body 23 made of the metal material can avoid a high-temperature sintering step during preparation. Compared with a metal dam, the dam 20 adopts a modular design concept, the dam 20 is divided into an inner dam body 23 and an outer dam body 24, the inner dam body 23 and the outer dam body 24 in various sizes can be manufactured independently by adopting the same or different processes according to requirements in practical application, the inner dam body 23 can be adhered to the inner side surface of the outer dam body 24 and the low-temperature co-fired ceramic substrate 10 through an adhesive, the metal Kovar ring welding step can be avoided, the manufacturing process of the dam 20 is more flexible, and the strength is basically the same as or equivalent to that of the metal dam. Compare the plastic box dam, when packaging structure need with lid 50 welding on box dam 20, can be with lid 50 welding on inlayer dam 23, the gas tightness is better, and when packaging structure produced UV light, the inlayer dam 23 of metal material can effectively tolerate the UV and shine, and in addition, the inlayer dam 23 of metal material is higher than the intensity of plastic box dam, can improve whole packaging structure's stability.
In some embodiments of the present disclosure, the outer-layer dam 24 is made of a metal material, which can improve the strength of the outer-layer dam 24, and the material of the outer-layer dam 24 may be gold, silver, copper, aluminum, or alloy. The method for arranging the outer dam 24 on the upper surface of the uppermost substrate unit 11 comprises the following steps: the outer-layer dam 24 is adhered to the upper surface of the uppermost layer of the substrate unit 11, or the outer-layer dam 24 is manufactured on the upper surface of the uppermost layer of the substrate unit 11 in a vacuum coating mode, or the outer-layer dam 24 is manufactured on the outer side surface of the inner-layer dam 23 in an electroplating mode, or the outer-layer dam 24 is manufactured on the upper surface of the uppermost layer of the substrate unit 11 in the vacuum coating mode firstly and then in the electroplating mode. The vacuum coating method is, for example, magnetron sputtering. The preparation method of the outer dam 24 made of metal material may be the same as or similar to that of the inner dam 23, and is not described herein again.
In some embodiments of the present disclosure, the outer dam 24 is made of plastic, and the manufacturing cost of the dam 20 can be reduced, and the outer dam 24 is made of plastic, such as synthetic resin or natural resin. When the outer-layer dam 24 is made of plastic, the following method may be adopted to dispose the outer-layer dam 24 on the upper surface of the substrate unit 11 on the uppermost layer: the outer-layer dam body 24 is adhered to the inner-layer dam body 23, or the inner-layer dam body 23 is used as a part of a mold for manufacturing the outer-layer dam body 24, the outer-layer dam body 24 is manufactured on the upper surface of the uppermost substrate unit 11 in an injection molding mode, or the inner-layer dam body 23 is embedded into the mold for manufacturing the outer-layer dam body 24, the inner-layer dam body 23 and the outer-layer dam body 24 which are connected into a whole are manufactured in an injection molding mode, and the inner-layer dam body 23 and the outer-layer dam body 24 which are connected into a whole are arranged on the upper surface of the uppermost substrate unit 11. Specifically, the outer-layer dam 24 is adhered to the upper surface of the uppermost substrate unit 11 by an adhesive, or the inner-layer dam 23 made of a metal material is arranged on the upper surface of the uppermost substrate unit 11, another half mold for manufacturing the outer-layer dam 24 is placed on the upper surface of the uppermost substrate unit 11, the half mold is combined with the inner-layer dam 23 and the upper surface of the part of the uppermost substrate unit 11 to form a mold for manufacturing the outer-layer dam 24, molten plastic is injected into the mold, the outer-layer dam 24 is formed after cooling, the other half mold is removed, the outer-layer dam 24 is integrally connected with the upper surface of the uppermost substrate unit 11 and the inner-layer dam 23, the inner-layer dam 23 and the outer-layer dam 24 are embedded and molded to form the dam 20, or the inner-layer dam 23 is embedded into the mold for manufacturing the outer-layer dam 24 in the injection molding process of the outer-layer dam 24, injecting molten plastic into the mold, cooling to form an inner dam 23 and an outer dam 24 which are connected into a whole, removing the mold to obtain the dam 20, and arranging the inner dam 23 and the outer dam 24 which are connected into a whole on the upper surface of the substrate unit 11 at the uppermost layer. The method can effectively utilize the manufactured inner-layer dam body 23, compared with a mode of firstly manufacturing the outer-layer dam body 24 and then adhering, the manufacturing process is simplified, and the adhesiveness between the outer-layer dam body 24, the inner-layer dam body 23 and the low-temperature co-fired ceramic substrate 10 is better.
Referring to fig. 11 and 23, an embodiment of the present application further provides a package structure, and a specific implementation manner of the package structure is consistent with the implementation manner and the achieved technical effect of the method for manufacturing the package structure described in this embodiment, and details of the implementation manner and the technical effect are not repeated.
The package structure includes: the low-temperature co-fired ceramic substrate 10, the dam 20, and may further include an electronic component 40 and a cover 50.
The box dam 20 is disposed on the upper surface of the uppermost substrate unit 11, and the box dam 20 may be annular or frame-shaped as a whole, and the box dam 20 may be disposed in other shapes as needed. The dam 20 includes an inner dam 23 and an outer dam 24, the inner dam 23 and the outer dam 24 may be respectively and independently annular or frame-shaped, and the inner dam 23 and the outer dam 24 may be configured in other shapes as needed. The thickness of the box dam 20 and the thickness ratio of the inner dam 23 to the outer dam 24 may be set as required, and the thickness ratio of the inner dam 23 to the outer dam 24 is, for example, 1:1, 1:2, 1:3, 1:4, 1:5, 2:1, 3:1, 4:1, 5:1, 2:3, 2:5, 3:4, 4:3, 5: 2.
The inner layer dam 23 is sleeved in the outer layer dam 24, the inner layer dam 23 is provided with a top surface, an opposite inner side surface and an outer side surface, and the outer layer dam 24 is provided with a top surface, an opposite inner side surface and an outer side surface. The inner dam 23 and the outer dam 24 may be adjacent or not, preferably, the inner dam 23 and the outer dam 24 are adjacent, and when the inner dam 23 and the outer dam 24 are adjacent, the outer side surface of the inner dam 23 is attached to the inner side surface of the outer dam 24, so that the strength and the air tightness of the dam are improved. In some embodiments of the present application, the outer side surface of the inner dam 23 is adhered to the inner side surface of the outer dam 24 by an adhesive, and the adhering connection mode has a simple process, low cost and convenient popularization.
In some embodiments of the present application, the top surface of the inner-layer dam 23 is lower than the top surface of the outer-layer dam 24 to form a stepped structure, and when the dam 20 with the stepped structure is packaged, the cover 50 may be disposed on the top surface of the inner-layer dam 23, in the prior art, the cover 50 is often mounted on the whole dam, and the cover 50 is easily loosened and may shift or even fall off from the dam 20, in the present packaging structure, the stepped dam 20 is disposed to provide a better mounting condition for the cover 50, the cover 50 for packaging may be mounted on the top surface of the inner-layer dam 23, and the movement of the cover 50 in the plane direction is limited by the outer-layer dam 24, so that the cover 50 is not easily moved relative to the dam 20, and the stepped dam 20 makes the connection between the cover 50 and the dam 20 more stable, can resist greater impact, and improve the stability and the service life of the packaging structure, and the air tightness is good.
In some embodiments, the cross-sectional shape of the portion of the dam 20 below the top surface of the inner-layer dam 23 along the direction perpendicular to the extending direction of the dam 20 is trapezoidal or rectangular, which can effectively improve the stability of the package structure.
The inner dam 23 is made of metal, for example, the outer dam 24 may be made of gold, silver, copper, aluminum or alloy, the inner dam 23 made of metal not only facilitates welding of the cover 50, but also can withstand UV irradiation, and the inner dam 23 made of metal can also improve the strength of the dam 20.
Compared with the existing ceramic dam, metal dam and plastic dam, the dam 20 of the packaging structure of the embodiment of the application comprises an inner layer dam 23 and an outer layer dam 24, wherein the inner layer dam 23 is made of metal. Compared with the ceramic dam, the inner-layer dam body 23 made of the metal material can avoid a high-temperature sintering step during preparation. Compared with a metal dam, the dam 20 adopts a modular design concept, the dam 20 is divided into an inner dam body 23 and an outer dam body 24, the inner dam body 23 and the outer dam body 24 in various sizes can be manufactured independently by adopting the same or different processes according to requirements in practical application, the inner dam body 23 can be adhered to the inner side surface of the outer dam body 24 and the low-temperature co-fired ceramic substrate 10 through an adhesive, the metal Kovar ring welding step can be avoided, the manufacturing process of the dam 20 is more flexible, and the strength is basically the same as or equivalent to that of the metal dam. Compare the plastic box dam, when packaging structure need with lid 50 welding on box dam 20, can be with lid 50 welding on inlayer dam 23, the gas tightness is better, and when packaging structure produced UV light, the inlayer dam 23 of metal material can effectively tolerate the UV and shine, and in addition, the inlayer dam 23 of metal material is higher than the intensity of plastic box dam, can improve whole packaging structure's stability. Therefore, the packaging structure of the embodiment of the application can overcome the defects of the existing box dam and meet the packaging requirements.
In some embodiments of the present application, the outer dam 24 is made of metal or plastic, the metal can improve the strength of the outer dam 24, the outer dam 24 made of plastic can reduce the manufacturing cost of the dam 20, and the material of the outer dam 24 can be flexibly selected according to the packaging requirements. The outer dam 24 may be made of gold, silver, copper, aluminum, or an alloy, and the outer dam 24 made of a plastic material may be made of synthetic resin or natural resin, for example.
The package structure may further include an electronic component 40 and a cover 50, wherein the electronic component 40 is disposed on the upper surface of the uppermost substrate unit 11 and electrically connected to the first conductive layer 14, the electronic component 40 may be electrically connected to the first conductive layer 14 by a wire or a soldering method, and the cover 50 is disposed on the inner dam 23 to encapsulate the electronic component 40. The cover 50 may be adhered to the dam 20, preferably to the inner dam 23, by an adhesive, and as a preferable mode, the cover 50 is welded to a portion on the top surface of the inner dam 23, so that the hermetic package of the package structure is realized by welding, and the product is more airtight.
The electronic component 40 may be a front-mounted chip, a flip chip, a vertical chip, or other functional components, for example, when the product corresponding to the package structure is an image sensor, the electronic component 40 in the package structure may be one or more of functional components such as a sensor chip and a sensing component, and the cover 50 may be a transparent cover glass; when the product corresponding to the package structure is a laser, the electronic component 40 in the package structure may be a laser chip, and the cover 50 may be a lens; when the product corresponding to the package structure is an LED module, the electronic component 40 in the package structure may be an LED chip, and the cover 50 may be a transparent cover glass.
While the present application is described in terms of various aspects, including exemplary embodiments, the principles of the invention should not be limited to the disclosed embodiments, but are also intended to cover various modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the appended claims.

Claims (24)

1. A method for manufacturing a package structure includes:
providing a low-temperature co-fired ceramic substrate, wherein the low-temperature co-fired ceramic substrate comprises a plurality of stacked substrate units, conductors penetrating through the upper surface and the lower surface of each substrate unit are arranged on the substrate units, interlayer conducting layers are arranged on the upper surfaces of the substrate units except the uppermost layer, and no interlayer conducting layer is arranged on the upper surface of the substrate unit on the uppermost layer;
manufacturing a first conductive layer on the upper surface of the uppermost substrate unit, manufacturing a second conductive layer on the lower surface of the lowermost substrate unit, wherein the first conductive layer is electrically connected with the conductor in the uppermost substrate unit, and the second conductive layer is electrically connected with the conductor in the lowermost substrate unit;
the first conducting layer and the second conducting layer are respectively obtained by adopting any one of the following methods:
the copper plating is directly carried out;
and manufacturing a conductive film layer on the surface of the substrate unit, and performing laser etching on the conductive film layer or removing part of the conductive film layer by adopting a CNC (computerized numerical control) processing mode according to a preset circuit pattern.
2. The method for manufacturing the package structure according to claim 1, wherein the low-temperature co-fired ceramic substrate is obtained by the following method: providing a plurality of green ceramic tapes form on the green ceramic tape and run through the conducting hole of the upper and lower two sides of the green ceramic tape, to fill conductive material in the conducting hole of the green ceramic tape in order to form the electric conductor, outside the uppermost layer the surface of the green ceramic tape forms the conducting layer between layers, the uppermost layer the green ceramic tape does not set up the conducting layer between layers, and will be a plurality of the green ceramic tape is stacked and hot pressed, then right the green ceramic tape is sliced and co-fired with low temperature, and the low temperature co-fired ceramic substrate is obtained.
3. The method for manufacturing the package structure according to claim 2, further comprising: and forming a passive device on the surface of at least one green ceramic tape except the uppermost layer.
4. The method for manufacturing the package structure according to claim 1, wherein the method for manufacturing the first conductive layer and/or the second conductive layer on the surface of the substrate unit by direct copper plating comprises: the method comprises the steps of manufacturing a first conductive film layer on the surface of a substrate unit in a vacuum evaporation mode, pasting a dry film on the first conductive film layer, then utilizing a photomask to expose and develop the surface of the substrate unit to obtain a circuit pattern, manufacturing a second conductive film layer on the circuit pattern of the substrate unit in an electroplating mode, and removing the dry film and the first conductive film layer except the circuit pattern to obtain a patterned first conductive layer and/or a patterned second conductive layer.
5. The method for manufacturing the package structure according to claim 1, wherein the method for manufacturing the conductive film layer on the surface of the substrate unit comprises:
manufacturing a conductive film layer on the surface of the substrate unit in a vacuum coating mode; or the like, or, alternatively,
firstly, a third conductive film layer is manufactured on the surface of the substrate unit in a vacuum coating mode, then a fourth conductive film layer is manufactured on the third conductive film layer in an electroplating mode, and the third conductive film layer and the fourth conductive film layer form the conductive film layer.
6. The method for manufacturing the package structure according to claim 5, wherein the vacuum coating is magnetron sputtering.
7. The method of claim 1, further comprising: and manufacturing a protective film layer on the first conductive layer and/or the second conductive layer.
8. The method of claim 1, further comprising:
arranging a dam on the upper surface of the uppermost substrate unit, wherein the dam is a plastic dam and is provided with a top surface, an opposite inner side surface and an opposite outer side surface;
and providing a metal piece, wherein the metal piece is arranged on the dam and covers at least part of the top surface and/or at least part of the inner side surface of the dam.
9. The method of manufacturing a package structure according to claim 8, wherein the step of providing a dam on the upper surface of the uppermost substrate unit comprises: and adhering the box dam to the uppermost layer of the substrate unit, or taking the metal piece as a part of a mould for manufacturing the box dam, and manufacturing the box dam on the upper surface of the uppermost layer of the substrate unit in an injection molding mode.
10. The method of claim 1, further comprising:
arranging a dam on the upper surface of the substrate unit on the uppermost layer, wherein the dam comprises a lower-layer dam body and an upper-layer dam body, the lower-layer dam body is arranged on the upper surface of the substrate unit on the uppermost layer, the lower-layer dam body is made of plastic, the lower-layer dam body is provided with a top surface, an opposite inner side surface and an outer side surface, and the upper-layer dam body is arranged on the top surface of the lower-layer dam body and forms a stepped structure;
and providing a metal piece, wherein the metal piece is arranged on the lower layer dam body and covers at least part of the top surface and/or at least part of the inner side surface of the lower layer dam body.
11. The method of claim 10, wherein the step of disposing the lower dam on the upper surface of the uppermost substrate unit comprises: will lower floor's dam adhesion is in the superiors the upper surface of base plate unit, or, will the metalwork is as the preparation the partly of the mould of lower floor's dam adopts the mode of moulding plastics at the superiors the upper surface of base plate unit is made lower floor's dam, or, will the metalwork buries the preparation the mould of lower floor's dam adopts the mode of moulding plastics preparation to be connected as an organic whole the metalwork with lower floor's dam to it is as an organic whole to connect the metalwork with lower floor's dam sets up at the superiors the upper surface of base plate unit.
12. The method for manufacturing the package structure according to claim 1, further comprising:
at the superiors the upper surface of base plate unit sets up the box dam, the box dam includes lower floor's dam and upper dam, lower floor's dam sets up at the superiors the upper surface of base plate unit, lower floor's dam is the metal material, lower floor's dam has top surface, relative medial surface and lateral surface, upper dam sets up on the lower floor's dam top surface and form the stair structure.
13. The method for manufacturing the package structure according to claim 1, further comprising:
arranging a surrounding dam on the upper surface of the substrate unit on the uppermost layer, wherein the surrounding dam comprises an inner-layer dam body and an outer-layer dam body, the inner-layer dam body is sleeved in the outer-layer dam body and is made of plastic materials, and the inner-layer dam body is provided with a top surface, an opposite inner side surface and an opposite outer side surface;
and providing a metal piece, wherein the metal piece is arranged on the inner layer dam body and covers at least part of the top surface and/or at least part of the inner side surface of the inner layer dam body.
14. The method of claim 13, wherein the outer dam is made of a metal material, and the step of disposing the inner dam on the upper surface of the uppermost substrate unit includes: will outer dam is as the preparation the partly of the mould of inlayer dam adopts the mode of moulding plastics at the superiors the inlayer dam is made to the upper surface of base plate unit, or, will outer dam buries the preparation the mould of inlayer dam adopts the mode of moulding plastics preparation to be connected as an organic whole outer dam with the inlayer dam to will connect as an organic whole outer dam with the inlayer dam sets up at the superiors the upper surface of base plate unit.
15. The method of claim 13, wherein the step of disposing the inner dam on the upper surface of the uppermost substrate unit comprises: will inlayer dam adhesion is in the superiors the upper surface of base plate unit, or, will the metalwork is as the preparation the partly of the mould of inlayer dam adopts the mode of moulding plastics at the superiors the inlayer dam is made to the upper surface of base plate unit, or, will the metalwork buries the preparation the mould of inlayer dam adopts the mode of moulding plastics preparation to be connected as an organic whole the metalwork with the inlayer dam to it is as an organic whole to connect the metalwork with the inlayer dam sets up at the superiors the upper surface of base plate unit.
16. The method for manufacturing the package structure according to claim 1, further comprising: the upper surface of the base plate unit on the uppermost layer is provided with a surrounding dam, the surrounding dam comprises an inner-layer dam body and an outer-layer dam body, the inner-layer dam body is sleeved in the outer-layer dam body, and the inner-layer dam body is made of metal materials.
17. The method of claim 16, wherein the outer dam is made of plastic, and the step of disposing the outer dam on the upper surface of the uppermost substrate unit comprises: will outer dam adhesion is in on the inlayer dam, or, will the inlayer dam is as the preparation the part of the mould of outer dam, adopt the mode of moulding plastics at the superiors the upper surface of base plate unit is made outer dam, or, will the preparation is buried to the inlayer dam the mould of outer dam adopts the mode of moulding plastics preparation to be connected as an organic whole the inlayer dam with outer dam to it is as an organic whole to connect the inlayer dam with outer dam sets up at the superiors the upper surface of base plate unit.
18. A packaging structure is characterized by comprising a low-temperature co-fired ceramic substrate, wherein the low-temperature co-fired ceramic substrate comprises a plurality of stacked substrate units, conductors penetrating through the upper surface and the lower surface of the low-temperature co-fired ceramic substrate units are arranged on the substrate units, interlayer conducting layers are arranged on the upper surfaces of the substrate units except the uppermost layer, and no interlayer conducting layer is arranged on the upper surface of the substrate unit on the uppermost layer;
the upper surface of the substrate unit on the uppermost layer is provided with a first conducting layer, the lower surface of the substrate unit on the lowermost layer is provided with a second conducting layer, the first conducting layer is electrically connected with the conductor in the substrate unit on the uppermost layer, the second conducting layer is electrically connected with the conductor in the substrate unit on the lowermost layer, and the first conducting layer and the second conducting layer are respectively obtained by adopting any one of the following methods:
the copper plating is directly carried out; or the like, or, alternatively,
and manufacturing a conductive film layer on the surface of the substrate unit, and performing laser etching on the conductive film layer or removing part of the conductive film layer by adopting a CNC (computerized numerical control) processing mode according to a preset circuit pattern to obtain the conductive film layer.
19. The package structure of claim 18, further comprising a protective film layer disposed on the first conductive layer and/or the second conductive layer, and/or a passive device disposed on at least one of the substrate units other than the uppermost layer.
20. The package structure of claim 18, further comprising:
the box dam is a plastic box dam, is arranged on the upper surface of the uppermost substrate unit and is provided with a top surface, an opposite inner side surface and an outer side surface;
the metal piece is arranged on the dam and covers at least part of the top surface and/or at least part of the inner side surface of the dam.
21. The package structure of claim 18, further comprising:
the dam comprises a lower dam body and an upper dam body, the lower dam body is arranged on the upper surface of the substrate unit on the uppermost layer, the lower dam body is made of plastic, the lower dam body is provided with a top surface, an opposite inner side surface and an outer side surface, and the upper dam body is arranged on the top surface of the lower dam body and forms a stepped structure;
the metal piece is arranged on the lower layer dam body and covers at least part of the top surface and/or at least part of the inner side surface of the lower layer dam body.
22. The package structure of claim 18, further comprising:
the box dam, the box dam includes lower floor's dam body and upper dam body, lower floor's dam body sets up in the superiors the upper surface of base plate unit, lower floor's dam body is the metal material, lower floor's dam body has top surface, relative medial surface and lateral surface, upper dam body sets up on the lower floor's dam body top surface and form the stair structure.
23. The package structure of claim 18, further comprising:
the dam comprises an inner-layer dam body and an outer-layer dam body, the inner-layer dam body is sleeved in the outer-layer dam body, the inner-layer dam body is made of plastic materials, and the inner-layer dam body is provided with a top surface, an opposite inner side surface and an opposite outer side surface;
the metal piece is arranged on the inner layer dam body and covers at least part of the top surface and/or at least part of the inner side surface of the inner layer dam body.
24. The package structure of claim 18, further comprising:
the box dam, the box dam sets up in the superiors the upper surface of base plate unit, the box dam includes inlayer dam body and outer layer dam body, the inlayer dam body cover is established in the outer layer dam body, the inlayer dam body is the metal material.
CN202110180084.1A 2021-02-09 2021-02-09 Packaging structure and manufacturing method thereof Pending CN112967934A (en)

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Application publication date: 20210615