CN112962085B - Film growth method and device - Google Patents
Film growth method and device Download PDFInfo
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- CN112962085B CN112962085B CN202110142676.4A CN202110142676A CN112962085B CN 112962085 B CN112962085 B CN 112962085B CN 202110142676 A CN202110142676 A CN 202110142676A CN 112962085 B CN112962085 B CN 112962085B
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45557—Pulsed pressure or control pressure
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
- H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
Abstract
The embodiment of the application provides a film growth method and film growth equipment, which can be used for introducing reaction gas into a reaction cavity according to a set mode, wherein a substrate to be processed is placed in the reaction cavity, the set mode can comprise the steps of controlling the reaction gas to be introduced into the reaction cavity at a first gas partial pressure in a first stage, controlling the reaction gas to be introduced into the reaction cavity at a second gas partial pressure in a second stage so as to perform film growth, and controlling the reaction gas to be introduced into the reaction cavity at the second gas partial pressure in the second stage, wherein the first gas partial pressure is larger than the second gas partial pressure in the second stage after the first stage, so that more reaction gas can reach the substrate to be processed, even if the substrate to be processed has a concave structure, more reaction gas can reach the bottom of the concave structure, the film quality at the bottom of the concave structure is improved, the step coverage rate of the film is improved, and meanwhile, the second stage of film growth can ensure proper pressure and proper film growth rate in the reaction cavity, and the film quality is improved.
Description
Technical Field
The application relates to the field of semiconductors, in particular to a film growth method and a film growth device.
Background
In the present semiconductor device fabrication process, there is a need for film growth, such as depositing material on a planar surface to form a planar film, or depositing material on a device having recessed portions to form a film in the recesses. For example, in a 3D NAND device, a Channel hole is formed first, and then a memory layer is formed on a sidewall of the Channel hole, where the memory layer may include an Oxide-Nitride-Oxide (ONO) layer formed of silicon Oxide, silicon Nitride, and a silicon Oxide layer, and the memory layer is an important film layer in the device, and its quality directly affects the device performance, so it is very important to obtain a high quality memory layer.
Obtaining a high quality film has a relatively high difficulty, and particularly, forming a high quality film on a device having a recessed portion, requires a deposited material with good step coverage (S/C), and how to obtain a high quality film is an important problem in the art.
Disclosure of Invention
In order to solve the technical problems, the embodiment of the application provides a film growth method and a film growth device, which can improve the step coverage rate of materials and improve the film quality.
The embodiment of the application provides a film growth method, which comprises the following steps:
introducing reaction gas into a reaction cavity according to a set mode, wherein a substrate to be processed is placed in the reaction cavity, and the set mode comprises the following steps:
controlling the reaction gas to be introduced into the reaction cavity at a first gas partial pressure in the first stage;
controlling the reaction gas to be introduced into the reaction cavity at a second gas partial pressure in the second stage so as to perform film growth; the second stage is subsequent to the first stage, the first partial pressure of gas being greater than the second partial pressure of gas.
Optionally, the reaction chamber is an atomic layer deposition chamber, the film layer growth is atomic layer deposition, and different reaction gases in the atomic layer deposition process are alternately introduced into the reaction chamber to periodically form a film for growth; at least one of different reaction gases introduced in each film forming period is introduced into the reaction cavity according to the set mode.
Optionally, the substrate to be processed includes a recess structure, the recess structure is a trench hole in the storage device, a first gas and a second gas are sequentially introduced into the reaction chamber in each film forming period, the first gas is hexachlorodisilane, and the second gas is a nitrogen-containing reaction gas or an oxygen-containing reaction gas.
Optionally, the temperature in the reaction chamber is in the range of 550-670 ℃.
Optionally, in the first stage and the second stage, the reaction gas is introduced into the reaction chamber through a same air inlet pipeline, and a control valve is arranged on the air inlet pipeline;
before the first stage of controlling the reaction gas to be introduced into the reaction chamber at the first partial pressure of the gas, closing the control valve for a preset period of time to raise the pressure of the reaction gas in the gas inlet pipeline; the reaction gas is introduced into the air inlet pipeline within the preset time period;
the first stage of controlling the reaction gas to be introduced into the reaction cavity at a first partial pressure of the gas, and the second stage of controlling the reaction gas to be introduced into the reaction cavity at a second partial pressure of the gas comprise: and opening the control valve to gradually reduce the partial pressure of the reaction gas introduced into the reaction cavity from the first partial pressure to the second partial pressure.
Optionally, in the first stage, the reaction gas is introduced into the reaction chamber through a first pipeline, and in the second stage, the reaction gas is introduced into the reaction chamber through a second pipeline; the partial pressure of the reactant gas in the first conduit is greater than the partial pressure of the reactant gas in the second conduit.
Optionally, the ratio of the first partial pressure of gas to the second partial pressure of gas is less than or equal to 4.
Optionally, the duration of the first stage ranges from 1 to 30 seconds, and the duration of the second stage ranges from 60 to 300 seconds.
The embodiment of the application provides film growth equipment, which comprises the following components:
the reaction cavity is used for placing a substrate to be processed;
the air inlet pipeline is used for introducing reaction gas into the reaction cavity;
the gas outlet pipeline is used for flowing out the reaction gas in the reaction cavity;
and the controller is used for controlling the gas partial pressure of the reaction gas of the gas inlet pipeline so as to execute the film growth method.
Optionally, the reaction gas is introduced into the reaction cavity through the same air inlet pipeline, the controller is arranged on the air inlet pipeline, and the controller comprises a control valve and a control circuit;
the control circuit is used for adjusting the opening of the control valve so as to adjust the flow rate of the reaction gas flowing through the air inlet pipeline, thereby controlling the reaction gas to be introduced into the reaction cavity at a first gas partial pressure and a second gas partial pressure.
Optionally, the control circuit adjusts the opening degree of the control valve, including:
the control circuit controls the opening degree of the control valve of the air inlet pipeline to be zero and to last for a preset time so as to improve the air pressure in the air inlet pipeline; the reaction gas is introduced into the air inlet pipeline within the preset time period;
the opening degree of the control valve controlling the air inlet pipeline is increased, so that the partial pressure of the gas introduced into the reaction cavity by the reaction gas is gradually reduced from the first partial pressure of the gas to the second partial pressure of the gas.
Optionally, the gas inlet pipeline comprises a first pipeline and a second pipeline, the first stage is used for introducing the reaction gas into the reaction cavity through the first pipeline, and the second stage is used for introducing the reaction gas into the reaction cavity through the second pipeline; the partial pressure of the reaction gas in the first pipeline is a first partial pressure, and the partial pressure of the reaction gas in the second pipeline is a second partial pressure.
The embodiment of the application provides a film growth method and film growth equipment, which can specifically lead reaction gas into a reaction cavity according to a set mode, wherein a substrate to be processed is placed in the reaction cavity, the set mode can comprise the steps of controlling the reaction gas to be led into the reaction cavity at a first gas partial pressure in a first stage, controlling the reaction gas to be led into the reaction cavity at a second gas partial pressure in a second stage so as to carry out film growth, and controlling the reaction gas to be led into the reaction cavity at the second gas partial pressure in the second stage, wherein the first gas partial pressure is higher than the second gas partial pressure in the second stage, so that higher first gas partial pressure can lead more reaction gas to reach the substrate to be processed, even if the substrate to be processed has a concave structure, more reaction gas can reach the bottom of the concave structure, thereby solving the problem of poor film quality caused by insufficient reaction gas at the bottom of the concave structure, improving the film quality at the bottom of the concave structure, and improving the step coverage rate of the film.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments described in the present application, and other drawings may be obtained according to these drawings for those of ordinary skill in the art.
FIG. 1 is a schematic diagram of a 3D NAND device according to an embodiment of the present application;
FIG. 2 is a flow chart of a film growth method according to an embodiment of the present application;
FIG. 3 is a schematic diagram of partial pressure of gas during film growth in the prior art;
FIG. 4 is a schematic diagram of partial pressure of gas during film growth according to an embodiment of the present application.
Detailed Description
In order to make the present application better understood by those skilled in the art, the following description will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the accompanying drawings, and it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
At present, when forming a film layer on an uneven surface, how to improve the quality of the film layer is an important technical problem. For example, referring to fig. 1, a schematic structural diagram of a 3D NAND device according to an embodiment of the present application is shown, in which a stacked layer 110 is formed on a substrate 100, a channel hole penetrating through the stacked layer 110 is formed in the stacked layer 110, the stacked layer includes an insulating layer 1101 and a sacrificial layer 1102, and an epitaxial structure 122 is formed at the bottom of the channel hole. The memory layer 124 is formed in the channel hole, and the memory layer 124 needs to be formed inside the channel hole, so that the memory layer 124 needs to have a better step coverage rate, which is a percentage of the ratio of the thickness of the film at the step to the thickness of the film at the flat in the device, so that the memory layer 124 at the bottom of the channel hole also has a better quality.
Atomic layer deposition (Atomic layer deposition, ALD) is a method by which substances can be transferred layer by layer onto a substrate surface in a monoatomic film form by alternately introducing vapor phase precursor pulses into a reaction chamber to chemisorb and react on the substrate to form a deposited film. Specifically, when the gas phase precursor is introduced into the reaction chamber, the reaction chamber can have stable reaction gas content so as to perform film growth. Of course, the film formation method may also include Chemical Vapor Deposition (CVD), physical Vapor Deposition (PVD), and the like.
However, in the existing film formation method, even if the atomic layer deposition is performed, there is still a problem that the step coverage rate is not high enough, especially when the aspect ratio (a/R) of the recessed portion is large, the bottom film layer thickness of the recessed portion is seriously lost, so as to gradually increase the number of stacked layers of the 3D NAND device, the difficulty of improving the high-quality storage layer is also increased, for example, when the number of stacked layers of the 3D NAND device is greater than 128 layers, the aspect ratio of the channel hole is greater than 73:1, and the step coverage rate of the storage layer is generally less than 92%, which affects the device yield, so that the practical requirement cannot be satisfied.
Based on the above technical problems, the embodiment of the application provides a film growth method and a device, specifically, the method can introduce a reaction gas into a reaction cavity according to a set mode, a substrate to be processed is placed in the reaction cavity, the set mode can include controlling the reaction gas to be introduced into the reaction cavity at a first gas partial pressure in a first stage, controlling the reaction gas to be introduced into the reaction cavity at a second gas partial pressure in a second stage so as to perform film growth, and after the first stage, the first gas partial pressure is greater than the second gas partial pressure in the second stage, so that higher first gas partial pressure can enable more reaction gas to reach the substrate to be processed, and even if the substrate to be processed has a concave structure, more reaction gas can reach the bottom of the concave structure, thereby solving the problem that the reaction gas at the bottom of the concave structure is insufficient to cause poor film quality, improving the film quality at the bottom of the concave structure, improving the step coverage rate of the film, and simultaneously ensuring proper pressure and proper film growth rate in the reaction cavity in the second stage of film growth.
The following describes in detail, by way of example, a specific implementation of a film growth method and apparatus according to an embodiment of the present application with reference to the accompanying drawings.
In the embodiment of the present application, the reaction gas may be introduced into the reaction chamber according to a set manner, where the set manner may be shown in fig. 2, and fig. 2 is a flowchart of a film growth method provided in the embodiment of the present application, and the method may include:
s101, controlling the reaction gas to be introduced into the reaction cavity at a first gas partial pressure in the first stage.
S102, controlling the reaction gas to be introduced into the reaction cavity at a second gas partial pressure in the second stage so as to perform film growth.
In the embodiment of the application, a film layer can be grown on a substrate to be processed, and the substrate to be processed can be a semiconductor substrate such as a Si substrate, a Ge substrate, a SiGe substrate, an SOI (silicon on insulator ) or a GOI (germanium on insulator, germanium On Insulator) substrate. In other embodiments, the semiconductor substrate may be a substrate of another element semiconductor or a compound semiconductor, for example, gaAs, inP, siC, or the like, a stacked structure, for example, si/SiGe, or the like, or another epitaxial structure, for example, SGOI (silicon germanium on insulator), or the like. In this particular embodiment, the substrate to be processed is a silicon substrate.
In the embodiment of the application, a concave structure can be formed on the substrate to be processed, the concave structure can be a step structure, a through hole structure, a groove structure and the like, the through hole structure can be a channel hole and the like in a 3D NAND device, the step structure can be a step structure of a step area and the like in the 3D NAND device, and the groove structure can be a gate line gap and the like in the 3D NAND device. Of course, the substrate to be processed may not have a recess structure formed thereon.
The 3D NAND device may have a stacked layer, where the channel hole, the step structure, and the gate line gap may be obtained by etching the stacked layer, where the number of layers of the stacked layer may be, for example, 8 layers, 32 layers, 64 layers, 128 layers, 192 layers, etc., where the aspect ratio of the channel hole corresponding to the 64 stacked layers is about 40:1, the aspect ratio of the channel hole corresponding to the 128 layers is about 73:1, the aspect ratio of the channel hole corresponding to the 192 layers is about 85:1, and the greater the aspect ratio, the greater the difficulty of forming the film layer with high step coverage.
Then, the substrate to be processed can be placed in the reaction chamber to perform film growth on the substrate to be processed. The reaction chamber may be an atomic layer deposition chamber, and the film layer growth mode may be an atomic layer deposition mode, and the atomic layer deposition chamber may be a furnace tube. The reaction chamber may be a CVD or PVD chamber, and the film growth mode may be CVD or PVD, although the reaction chamber may be other chambers, and the film growth mode may be other modes.
One of the reasons for the smaller film thickness at the bottom of the concave part is that the reaction gas at the bottom of the concave part is less, because when the depth-to-width ratio of the concave part is larger, the difficulty that the reaction gas enters the bottom of the concave part from the opening of the concave part is also larger, which is unfavorable for the growth of the high-quality film at the concave part. In the prior art, when a film growth is performed by using an atomic layer deposition process, a vapor phase precursor is pulsed to perform the film growth, and when the film growth is performed, a partial pressure (partial pressure) of the vapor phase precursor is generally constant, and is shown in fig. 3, which is a schematic diagram of the partial pressure of the gas in the film growth process in the prior art, the abscissa is time, the ordinate is the partial pressure of the gas, and the partial pressure of the gas periodically changes along with the time, so as to realize the periodic growth of the film. Where the partial pressure of a gas refers to the pressure developed by a component in a gas mixture when that component occupies the same volume of the gas mixture at the same temperature, of course, the higher the content of that component in the gas mixture, the greater its partial pressure of the gas.
In the embodiment of the application, when the film growth is required to be carried out on the substrate to be processed with the concave structure, the reaction gas can be introduced into the reaction cavity according to a set mode, so that the environment of the substrate to be processed in the reaction cavity is controlled to regulate the growth of the film on the substrate to be processed, specifically, the growth of the same reaction gas in the same film can be divided into two parts, namely a first stage in which the reaction gas is introduced with high gas partial pressure and a second stage in which the reaction gas is introduced with low gas partial pressure, and the first stage is before the second stage, so that the reaction gas at the bottom of the concave structure is more in the first stage in which the reaction gas is introduced with high gas partial pressure, the film growth process at the bottom of the concave structure is facilitated, and the film growth slowness problem caused by the fact that the reaction gas at the bottom of the concave structure is less is subjected to the pretreatment of the reaction gas with low gas partial pressure in the prior art is relieved, and the coverage of the film is improved.
Referring to fig. 4, a schematic diagram of gas partial pressure in a film growth process according to an embodiment of the present application is shown, wherein the abscissa is time, and the ordinate is the gas partial pressure of the same reaction gas, the first stage controls the reaction gas to be introduced into the reaction chamber at the first gas partial pressure, and the second stage controls the gas partial pressure at the substrate to be processed to be low.
In the implementation, the reaction gas can be controlled to be introduced into the reaction cavity at a first partial pressure of the gas so as to enter the first stage of the film growth. The reaction gas is a gas-phase precursor for forming the film layer, and can be attached to the surface of the concave structure or react with the surface of the concave structure, so that the first stage of film layer growth is realized. The first gas partial pressure is high, when the reaction gas is introduced into the reaction cavity at the first gas partial pressure, the reaction gas reaches the substrate to be treated at a faster flow rate, the content of the reaction gas at the substrate to be treated is rapidly increased, more reaction gas is facilitated to go deep into the bottom of the concave structure, and even if the depth-to-width ratio of the concave part is large, the concentration of the reaction gas at the bottom of the concave part can be increased under the large first gas partial pressure, so that the film layer growth at the bottom of the concave part is facilitated.
In practice, after the first stage, the reaction gas may be controlled to be introduced into the reaction chamber at a second partial pressure of the gas to enter the second stage of film growth. The second gas partial pressure is low, namely the first gas partial pressure is larger than the second gas partial pressure, when the reaction gas is introduced into the reaction cavity at the second gas partial pressure, the reaction gas reaches the substrate to be treated at a lower flow rate, the content of the reaction gas at the substrate to be treated is lower, the growth rate of the film layer is favorably controlled, and the thickness of the film layer can be accurately controlled through the time of the second stage.
In general, the reaction chamber may be filled with a reaction gas through an air inlet pipe, and the excess reaction gas and other gases generated by the reaction flow out through an air outlet pipe, when the reaction gas is controlled to be introduced into the reaction chamber at a first gas partial pressure, the reaction gas may be introduced into the reaction chamber at a first gas introduction flow rate, and when the reaction gas is controlled to be introduced into the reaction chamber at a second gas partial pressure, the reaction gas may be introduced into the reaction chamber at a second introduction flow rate, which is smaller than the first introduction flow rate.
Specifically, the reaction gas can be introduced into the reaction cavity through the same air inlet pipeline in the first stage and the second stage, and the air inlet pipeline can be provided with a control valve, so that before the reaction gas is controlled to be introduced into the reaction cavity through the first gas partial pressure in the first stage, the control valve of the air inlet pipeline can be controlled to be switched off for a preset period of time, the reaction gas in the air inlet pipeline is gradually increased when the reaction gas is introduced into the air inlet pipeline in the preset period of time, the air pressure in the air inlet pipeline is increased, and then the control valve of the air inlet pipeline is controlled to be switched on so as to enter the first stage and the second stage. After the control valve is opened, the reaction gas in the gas inlet pipeline is rapidly introduced into the reaction cavity, so that the reaction gas has a larger first introduction flow rate and a larger first gas partial pressure, and the content of the reaction gas at the substrate to be treated is rapidly increased; when the air pressure in the air inlet pipeline is close to the air pressure in the reaction cavity, the flow rate of the reaction gas in the air inlet pipeline tends to be stable, and the reaction gas has a smaller second inlet flow rate and a smaller second gas partial pressure, so that the content of the reaction gas at the substrate to be processed is kept at a lower stable level.
Between the first and second partial pressures of the reaction gas, the partial pressure between the first and second partial pressures may be used as a transition state and maintained for a shorter period of time, which may be shorter or even negligible than the first and second stages. In practice, between the first gas partial pressure and the second gas partial pressure of the reaction gas, the gas partial pressure lower than the second gas partial pressure may be a gas partial pressure lower than the second gas partial pressure due to the influence of the control process, as shown with reference to fig. 4.
Specifically, in the first stage, the reaction gas can be introduced into the reaction cavity through the first pipeline, and in the second stage, the reaction gas can be introduced into the reaction cavity through the second pipeline, and the gas partial pressure of the reaction gas in the first pipeline is greater than that of the reaction gas in the second pipeline, so that the film growth states of the first stage and the second stage are controlled.
When the film layer growth mode is atomic layer deposition, different reaction gases can be arranged in the film layer growth process, and the different reaction gases are alternately introduced into the reaction cavity to periodically form a film for growth, namely, the atomic layer deposition can comprise a plurality of film forming periods, different reaction gases can be sequentially introduced into each film forming period, and the introduced reaction gases of each film forming period are consistent, so that the periodic film forming growth is carried out. At least one of the different reaction gases introduced in each film formation cycle may be introduced into the reaction chamber in the aforementioned setting manner, that is, the aforementioned first stage and second stage may be included for one reaction gas. In the embodiment of the application, when the film growth mode is CVD or PVD, the film growth process may include a plurality of film forming cycles, and one reactive gas or a plurality of reactive gases may be introduced into each film forming cycle, where the one reactive gas or the plurality of reactive gases may include the first stage and the second stage. In the film growth process, the number of film forming periods is determined according to practical conditions, and the thickness of the film is thicker as the number of film forming periods is larger.
Taking atomic layer deposition as an example, a first gas and a second gas can be sequentially introduced into each film forming period, wherein the first gas is introduced to generate a first film layer, and the second gas is introduced to react with the first film layer to form a second film layer, i.e. each film forming period comprises the growth of the first film layer and the formation of the second film layer. Wherein at least one of the first gas and the second gas in each film forming cycle may be introduced into the reaction chamber in a set manner. For example, a first gas may be introduced as a reaction gas according to a set manner to perform growth of the first film layer, and a partial pressure of the reaction gas introduced into the reaction chamber is controlled to be a first partial pressure of the gas and a second partial pressure of the gas in sequence; in addition, the second gas can be used as a reaction gas, at this time, a first film layer is formed on the substrate to be processed, the first gas generated by the first film layer can be introduced in a set mode, only the second gas partial pressure can be introduced, and the second film layer can be formed through the reaction of the second gas and the first film layer, wherein the partial pressure of the second gas introduced into the reaction cavity is sequentially the first gas partial pressure and the second gas partial pressure.
The first partial pressure of the first gas and the second partial pressure of the second gas, and the first partial pressure of the second gas and the second partial pressure of the second gas are both set to represent different partial pressures of the same gas, and the partial pressures of the different gases are different concepts.
Taking the recessed structure as an example of a trench hole in a memory device, a memory layer may be formed in the trench hole, and the memory layer may include silicon oxide and silicon nitride, wherein the silicon oxide may be generated by using a silicon-containing reaction gas and an oxygen-containing reaction gas, and the silicon nitride may be generated by using a silicon-containing reaction gas and a nitrogen-containing reaction gas, wherein the silicon-containing reaction gas, the nitrogen-containing reaction gas, and the oxygen-containing reaction gas are all prone to the problem of growth limitation at the bottom of the recessed portion. Therefore, the first gas and the second gas can be sequentially introduced into the reaction cavity in each film forming period of the storage layer in the channel hole, and the silicon-containing reaction gas can be respectively used as the first gasThe body, the nitrogen-containing reaction gas or the oxygen-containing reaction gas is used as the second gas, and the first gas and the second gas react to generate a second film layer of silicon oxide or silicon nitride which is used as a part of the storage layer so as to improve the quality of the storage layer. The silicon-containing reaction gas may be Hexachlorodisilane (HCD) having a chemical formula of Si 2 Cl 6 The oxygen-containing reaction gas may be, for example, oxygen (O) 2 ) For example, the nitrogen-containing reaction gas may be ammonia (NH) 3 ) Etc.
Specifically, the values of the first gas partial pressure and the second gas partial pressure are determined according to the aspect ratio of the concave structure, the greater the aspect ratio of the concave structure is, the greater the values of the first gas partial pressure and the second gas partial pressure are, the ratio of the first gas partial pressure to the second gas partial pressure is less than or equal to 4, of course, the ratio of the first gas partial pressure to the second gas partial pressure is also greater than 1, the first gas partial pressure ensures the film layer growth at the bottom of the concave part, and the second gas partial pressure ensures the proper pressure and the proper reaction rate. The duration of the first phase may range from 1 to 30 seconds and the duration of the second phase may range from 60 to 300 seconds. When the reaction gas is hexachlorodisilane, the temperature in the reaction chamber is 550-670 ℃ to ensure proper film growth temperature.
The embodiment of the application provides a film growth method, which specifically comprises the steps of introducing reaction gas into a reaction cavity according to a set mode, placing a substrate to be processed in the reaction cavity, controlling the reaction gas to be introduced into the reaction cavity at a first gas partial pressure in a first stage, controlling the reaction gas to be introduced into the reaction cavity at a second gas partial pressure in a second stage so as to perform film growth, wherein the first gas partial pressure is larger than the second gas partial pressure in the second stage after the first stage, so that higher first gas partial pressure can enable more reaction gas to reach the substrate to be processed, and even if the substrate to be processed has a concave structure, more reaction gas can reach the bottom of the concave structure, thereby solving the problem of poor film quality caused by insufficient reaction gas at the bottom of the concave structure, improving the film quality at the bottom of the concave structure, improving the step coverage rate of the film, and simultaneously ensuring proper pressure and proper film growth rate in the reaction cavity in the second stage of film growth.
Based on the film growth method provided by the embodiment of the application, the embodiment of the application also provides film growth equipment, which comprises the following steps:
the reaction cavity is used for placing a substrate to be processed;
the air inlet pipeline is used for introducing reaction gas into the reaction cavity;
the gas outlet pipeline is used for flowing out the reaction gas in the reaction cavity;
and the controller is used for controlling the gas partial pressure of the reaction gas of the gas inlet pipeline so as to execute the film growth method.
Optionally, the controller is a mass flow controller (Mass Flow Controller, MFC).
Optionally, the reaction gas is introduced into the reaction cavity through the same air inlet pipeline, the controller is arranged on the air inlet pipeline, and the controller comprises a control valve and a control circuit;
the control circuit is used for adjusting the opening of the control valve so as to adjust the flow rate of the reaction gas flowing through the air inlet pipeline, thereby controlling the reaction gas to be introduced into the reaction cavity at a first gas partial pressure and a second gas partial pressure.
Optionally, the control circuit adjusts the opening degree of the control valve, including:
the control circuit controls the opening degree of the control valve of the air inlet pipeline to be zero and to last for a preset time so as to improve the air pressure in the air inlet pipeline; the reaction gas is introduced into the air inlet pipeline within the preset time period;
the opening degree of the control valve controlling the air inlet pipeline is increased, so that the partial pressure of the gas introduced into the reaction cavity by the reaction gas is gradually reduced from the first partial pressure of the gas to the second partial pressure of the gas.
Optionally, the gas inlet pipeline comprises a first pipeline and a second pipeline, the first stage is used for introducing the reaction gas into the reaction cavity through the first pipeline, and the second stage is used for introducing the reaction gas into the reaction cavity through the second pipeline; the partial pressure of the reaction gas in the first pipeline is a first partial pressure, and the partial pressure of the reaction gas in the second pipeline is a second partial pressure.
The "first" in the names of "first gas", "first gas partial pressure", "first pipeline", etc. in the embodiments of the present application are only used for name identification, and do not represent the first in sequence. The rule applies equally to "second" etc.
In this specification, each embodiment is described in a progressive manner, and identical and similar parts of each embodiment are all referred to each other, and each embodiment mainly describes differences from other embodiments. In particular, for the apparatus embodiments, since they are substantially similar to the method embodiments, the description is relatively simple, and reference is made to the description of the method embodiments for relevant points. The above-described apparatus and system embodiments are merely illustrative, in which the modules illustrated as separate components may or may not be physically separate, and the components shown as modules may or may not be physical modules, i.e., may be located in one place, or may be distributed across multiple network elements. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of this embodiment. Those of ordinary skill in the art will understand and implement the present application without undue burden.
The foregoing is merely a preferred embodiment of the present application and is not intended to limit the scope of the present application. It should be noted that modifications and adaptations to the present application may occur to one skilled in the art without departing from its scope.
Claims (12)
1. A method of film growth comprising:
introducing reaction gas into a reaction cavity according to a set mode, wherein a substrate to be processed is placed in the reaction cavity, and the set mode comprises the following steps:
controlling the reaction gas to be introduced into the reaction cavity at a first gas partial pressure in the first stage;
controlling the reaction gas to be introduced into the reaction cavity at a second gas partial pressure in the second stage so as to perform film growth; the second stage is subsequent to the first stage, the first partial pressure of gas being greater than the second partial pressure of gas.
2. The method according to claim 1, wherein the reaction chamber is an atomic layer deposition chamber, the film layer growth is atomic layer deposition, and different reaction gases of the atomic layer deposition process are alternately introduced into the reaction chamber to periodically perform film formation growth; at least one of different reaction gases introduced in each film forming period is introduced into the reaction cavity according to the set mode.
3. The method of claim 2, wherein the substrate to be processed comprises a recessed structure, the recessed structure is a trench hole in a memory device, a first gas and a second gas are sequentially introduced into the reaction chamber in each film forming cycle, the first gas is hexachlorodisilane, and the second gas is a nitrogen-containing reaction gas or an oxygen-containing reaction gas.
4. A method according to claim 3, wherein the temperature in the reaction chamber is in the range 550-670 ℃.
5. The method according to any one of claims 1 to 4, wherein,
in the first stage and the second stage, the reaction gas is introduced into the reaction cavity through the same air inlet pipeline, and a control valve is arranged on the air inlet pipeline;
before the first stage of controlling the reaction gas to be introduced into the reaction chamber at the first partial pressure of the gas, closing the control valve for a preset period of time to raise the pressure of the reaction gas in the gas inlet pipeline; the reaction gas is introduced into the air inlet pipeline within the preset time period;
the first stage of controlling the reaction gas to be introduced into the reaction cavity at a first partial pressure of the gas, and the second stage of controlling the reaction gas to be introduced into the reaction cavity at a second partial pressure of the gas comprise: and opening the control valve to gradually reduce the partial pressure of the reaction gas introduced into the reaction cavity from the first partial pressure to the second partial pressure.
6. The method of any one of claims 1-4, wherein the reactant gas is introduced into the reaction chamber through a first conduit during the first stage and the reactant gas is introduced into the reaction chamber through a second conduit during the second stage; the partial pressure of the reactant gas in the first conduit is greater than the partial pressure of the reactant gas in the second conduit.
7. The method of any one of claims 1-4, wherein the ratio of the first partial pressure of gas to the second partial pressure of gas is less than or equal to 4.
8. The method of any one of claims 1-4, wherein the first stage has a duration in the range of 1-30 seconds and the second stage has a duration in the range of 60-300 seconds.
9. A thin film growth apparatus, comprising:
the reaction cavity is used for placing a substrate to be processed;
the air inlet pipeline is used for introducing reaction gas into the reaction cavity;
the gas outlet pipeline is used for flowing out the reaction gas in the reaction cavity;
a controller for controlling a gas partial pressure of the reaction gas of the gas inlet line to perform the film growth method according to any one of claims 1 to 8.
10. The apparatus of claim 9, wherein the reactant gas is introduced into the reaction chamber through a same gas inlet line, the controller being disposed on the gas inlet line, the controller comprising a control valve and a control circuit;
the control circuit is used for adjusting the opening of the control valve so as to adjust the flow rate of the reaction gas flowing through the air inlet pipeline, thereby controlling the reaction gas to be introduced into the reaction cavity at a first gas partial pressure and a second gas partial pressure.
11. The apparatus of claim 10, wherein the control circuit adjusts an opening of the control valve, comprising:
the control circuit controls the opening degree of the control valve of the air inlet pipeline to be zero and to last for a preset time so as to improve the air pressure in the air inlet pipeline; the reaction gas is introduced into the air inlet pipeline within the preset time period;
the opening degree of the control valve controlling the air inlet pipeline is increased, so that the partial pressure of the gas introduced into the reaction cavity by the reaction gas is gradually reduced from the first partial pressure of the gas to the second partial pressure of the gas.
12. The apparatus of claim 9, wherein the gas inlet line comprises a first line through which the reactant gas is introduced into the reaction chamber and a second line through which the reactant gas is introduced into the reaction chamber; the partial pressure of the reaction gas in the first pipeline is a first partial pressure, and the partial pressure of the reaction gas in the second pipeline is a second partial pressure.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101194351A (en) * | 2005-06-27 | 2008-06-04 | 加利福尼亚大学董事会 | Method for chemical vapor deposition in high aspect ratio spaces |
| CN106191815A (en) * | 2015-05-28 | 2016-12-07 | 东京毅力科创株式会社 | The film build method of metal film |
| CN110344026A (en) * | 2018-04-02 | 2019-10-18 | 三星电子株式会社 | Deposition method and layer depositing device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101194351A (en) * | 2005-06-27 | 2008-06-04 | 加利福尼亚大学董事会 | Method for chemical vapor deposition in high aspect ratio spaces |
| CN106191815A (en) * | 2015-05-28 | 2016-12-07 | 东京毅力科创株式会社 | The film build method of metal film |
| CN110344026A (en) * | 2018-04-02 | 2019-10-18 | 三星电子株式会社 | Deposition method and layer depositing device |
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