CN112953577A - Radio frequency integrated circuit, transmitter and mobile terminal - Google Patents
Radio frequency integrated circuit, transmitter and mobile terminal Download PDFInfo
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- CN112953577A CN112953577A CN201911267865.3A CN201911267865A CN112953577A CN 112953577 A CN112953577 A CN 112953577A CN 201911267865 A CN201911267865 A CN 201911267865A CN 112953577 A CN112953577 A CN 112953577A
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B2001/0408—Circuits with power amplifiers
- H04B2001/0416—Circuits with power amplifiers having gain or transmission power control
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Abstract
The application discloses radio frequency integrated circuit, this radio frequency integrated circuit includes: the temperature compensation processing circuit is used for receiving the bias voltage signal and the acquired temperature voltage signal, amplifying the bias voltage signal by a first multiple to obtain a target bias voltage signal, amplifying the temperature voltage signal by a second multiple to obtain a target temperature voltage signal, and performing superposition processing on the target bias voltage signal and the target temperature voltage signal to obtain a target temperature compensation voltage signal; and the power amplifier circuit is connected with the temperature compensation processing circuit and receives the radio frequency input signal so as to perform temperature compensation on the radio frequency input signal by using the target temperature compensation voltage signal, thereby generating a corresponding radio frequency output signal. Through the technical scheme provided by the application, the relative independence of the bias compensation and the temperature compensation can be realized under the condition that the circuit topology of the power amplifier circuit is not changed, and the application range is wide. The application also provides a transmitter and a mobile terminal.
Description
Technical Field
The present application relates to the field of communications, and in particular, to a radio frequency integrated circuit, a transmitter, and a mobile terminal.
Background
In the prior art, since the bias state of the power amplifier is changed due to the temperature change, which causes the performance of the power amplifier to deteriorate, in order to obtain the proper performance in the full temperature range, it is necessary to ensure that the power amplifier has a stable static operating point in the full temperature range in the design stage of the radio frequency power amplifier, and thus a solution for solving the above technical problems is needed.
Disclosure of Invention
The technical problem that this application mainly solves is to provide one kind and can realize bias compensation and temperature compensation relatively independent radio frequency integrated circuit, transmitter and mobile terminal in the temperature compensation of bias.
In order to solve the technical problem, the application adopts a technical scheme that: there is provided a radio frequency integrated circuit, comprising:
the temperature compensation processing circuit is used for receiving a bias voltage signal and acquiring a temperature voltage signal, amplifying the bias voltage signal by a first multiple to obtain a target bias voltage signal, amplifying the temperature voltage signal by a second multiple to obtain a target temperature voltage signal, and performing superposition processing on the target bias voltage signal and the target temperature voltage signal to obtain a target temperature compensation voltage signal;
and the power amplifier circuit is connected with the temperature compensation processing circuit and receives the radio frequency input signal so as to carry out temperature compensation on the radio frequency input signal by using the target temperature compensation voltage signal, thereby generating a corresponding radio frequency output signal.
In order to solve the above technical problem, another technical solution adopted by the present application is: providing a transmitter comprising an amplifying and filtering circuit, a mixing circuit, a radio frequency integrated circuit, a low pass filter, and an antenna;
the output end of the amplifying and filtering circuit is connected with the input end of the mixing circuit, and the amplifying and filtering circuit is used for amplifying and filtering the received baseband signal and sending the baseband signal to the mixing circuit;
the output end of the frequency mixing circuit is connected with the input end of the radio frequency integrated circuit and is used for carrying out frequency mixing processing on the baseband signal output by the amplifying and filtering circuit so as to obtain a radio frequency signal of a preset frequency band and outputting the radio frequency signal to the radio frequency integrated circuit;
the radio frequency integrated circuit is the circuit described above, and is configured to amplify the radio frequency signal output by the mixer circuit to obtain the radio frequency signal with a target power;
the antenna is connected with the output end of the radio frequency integrated circuit through the low-pass filter and used for transmitting the radio frequency signal.
In order to solve the above technical problem, the present application further provides a mobile terminal, the mobile terminal includes a receiver and a transmitter, the transmitter is used for converting baseband signals into radio frequency signals, and will the radio frequency signals are transmitted, the transmitter is as above, the receiver is used for receiving preset frequency band radio frequency signals, and will preset frequency band radio frequency signals and convert into baseband signals.
The technical scheme provides a radio frequency integrated circuit comprising a temperature compensation processing circuit and a power amplifier circuit, wherein the temperature compensation processing circuit is used for receiving a bias voltage signal and acquiring a temperature voltage signal, amplifying the bias voltage signal by a first multiple to obtain a target bias voltage signal, amplifying the temperature voltage signal by a second multiple to obtain a target temperature voltage signal, superposing the target bias voltage signal and the target temperature voltage signal to obtain a target temperature compensation voltage signal, and outputting the target temperature compensation voltage signal to the power amplifier circuit for compensating a radio frequency input signal.
Drawings
FIG. 1 is a schematic diagram of an embodiment of a radio frequency integrated circuit according to the present application;
FIG. 2a is a schematic diagram of another embodiment of a radio frequency integrated circuit according to the present application;
FIG. 2b is a schematic diagram of another embodiment of a radio frequency integrated circuit of the present application;
FIG. 3 is a schematic diagram of an RF integrated circuit according to another embodiment of the present application;
fig. 4 is a schematic structural diagram of an embodiment of a transmitter according to the present application;
FIG. 5 is a schematic block diagram of another embodiment of a transmitter of the present application;
fig. 6 is a schematic structural diagram of an embodiment of a mobile terminal according to the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the specific embodiments described herein are merely illustrative of the application and are not limiting of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, "plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise. Furthermore, the terms "include" and "have," as well as any variations thereof, are intended to cover non-exclusive inclusions. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those steps or elements listed, but may alternatively include other steps or elements not listed, or inherent to such process, method, article, or apparatus.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly and implicitly understood by one skilled in the art that the embodiments described herein can be combined with other embodiments.
It should be noted that, in the following explanation of the present application, for the sake of clarity of the structural explanation in the rf integrated circuit, the circuit is divided according to the main functions performed by the circuit, and it is understood that the following division of the structural hierarchy of the circuit may be made into structural divisions different from the present application in different embodiments according to the functions mainly embodied as required. Therefore, the same circuit connection relationship as the technical solution provided by the present application is included in the scope of the patent protection of the present application.
Referring to fig. 1, fig. 1 is a schematic structural diagram of an embodiment of a radio frequency integrated circuit according to the present application. In the present embodiment, the radio frequency integrated circuit 10 includes: a temperature compensation processing circuit 11 and a power amplifier circuit 12. Wherein, the power amplifier circuit 12 is connected with the temperature compensation processing circuit 11.
The temperature compensation processing circuit 11 is configured to receive the bias voltage signal and collect the temperature voltage signal, amplify the bias voltage signal by a first multiple to obtain a target bias voltage signal, and the temperature compensation processing circuit 11 is further configured to amplify the temperature voltage signal by a second multiple to obtain a target temperature voltage signal. After obtaining the target bias voltage signal and the target temperature voltage signal, the temperature compensation processing circuit 11 may further perform a superposition process on the target bias voltage signal and the target temperature voltage signal to obtain a target temperature compensation voltage signal.
Specifically, in the present embodiment, the amplification factor of the temperature compensation processing circuit 11 for the bias voltage signal and the amplification factor for the temperature voltage signal are determined by the structural properties of the temperature compensation processing circuit 11, and can be adjusted and changed by a developer in the product design stage according to the actual product requirements. In other embodiments, the adjustment may be performed within a preset range as needed after the factory shipment. In this application V may be usedbiasRepresenting bias voltage signal by VtRepresenting a temperature voltage signal.
The power amplifier circuit 12 is connected to the temperature compensation processing circuit 11 and receives the rf input signal, so as to perform temperature compensation on the rf input signal by using the target temperature compensation voltage signal, thereby generating a corresponding rf output signal. The rf input signal received by the power amplifier circuit 12 is sent to the power amplifier circuit 12 by the previous stage circuit device. Specifically, when the rf integrated circuit 10 provided in the present application is used in a transmitter, the rf integrated circuit 10 provided in the present application is connected to the output terminal of the filter after the mixer device (not shown) in the transmitter, and the corresponding circuit device at the previous stage of the rf integrated circuit 10 is the filter (not shown). It is understood that in other embodiments, the circuit device type of the previous stage of the rf integrated circuit 10 may be other types of circuit devices, and the specific location of the rf integrated circuit 10 in the product is not limited.
According to the technical scheme, the temperature compensation processing circuit 11 is used for receiving the bias voltage signal and amplifying the bias voltage signal by a first multiple to obtain a target bias voltage, the temperature compensation processing circuit 11 is further used for collecting a temperature voltage signal and amplifying the temperature voltage signal by a second multiple to obtain a target temperature voltage signal, so that the bias compensation and the temperature compensation are independent, then the obtained target bias voltage signal and the target temperature voltage signal are subjected to superposition processing, and finally a target temperature compensation voltage signal is obtained and is output to the power amplification circuit 12. The power amplifier circuit 12 performs temperature compensation on the received rf input signal by using the target temperature compensation voltage signal, thereby generating a corresponding rf output signal. In addition, the technical scheme provided by the application can realize mutual independence of bias compensation and temperature compensation, so compared with the scheme in the prior art, the technical scheme provided by the application can relatively flexibly select circuit devices in the design stage of the temperature compensation processing circuit.
Referring to fig. 2a, fig. 2a is a schematic structural diagram of another embodiment of a radio frequency integrated circuit according to the present application. In the present embodiment, the temperature compensation processing circuit 21 includes: a first multiplication circuit 211, a second multiplication circuit 212, and an addition circuit 213.
The first multiplying circuit 211 is configured to obtain the bias voltage signal and a first multiple, and amplify the bias voltage signal by the first multiple to obtain a target bias voltage signal. The first multiplying circuit 211 is connected to an output terminal of a digital-to-analog converter (not shown) outside the temperature compensation processing circuit 21 for receiving the bias voltage signal, and an output terminal of the first multiplying circuit 211 is connected to the adding circuit 213 for sending a target bias voltage signal obtained by processing the bias voltage signal to the adding circuit 213. The voltage of the bias voltage signal obtained by the first multiplying circuit 211 depends on the specification of the circuit device before the first multiplying circuit 211, and is not limited herein. The second multiplying circuit 212 is configured to obtain the temperature voltage signal and a second multiple, and amplify the collected temperature voltage signal by the second multiple to obtain a target temperature voltage signal. An input terminal of the second multiplying circuit 212 is connected to a power source terminal (not shown), and an output terminal of the second multiplying circuit 212 is connected to the adding circuit 213, for outputting a target temperature voltage signal obtained by processing the temperature voltage signal to the adding circuit 213.
The adder circuit 213 is configured to perform superposition processing on the target bias voltage signal and the target temperature voltage signal to obtain a target temperature compensation voltage signal, an input end of the adder circuit 213 is connected to the first multiplier circuit 211 and the second multiplier circuit 212, respectively, and an output end of the adder circuit 213 is connected to the power amplifier circuit 22, and is configured to output the target temperature compensation voltage signal to the power amplifier circuit 22. In the current embodiment, the addition circuit 213 may include an operational amplifier. It should be noted that the first multiplication circuit 211 and the second multiplication circuit 212 provided in the present embodiment are independent from each other, and in other embodiments, the first multiplication circuit 211 and the second multiplication circuit 212 may be independent from each other in processing signals, but the actual circuit structure may have an intersection, for example, a part of devices may be shared.
Referring to fig. 2b, fig. 2b is a schematic diagram of a radio frequency integrated circuit according to another embodiment of the present application. In the present embodiment, the bias voltage signal VbiasIs the signal output by an external digital-to-analog converter, the temperature voltage signal VtIs a signal collected by a temperature sensor (not shown), and the first multiplying circuit 211b is used for multiplying the bias voltage signal VbiasAmplifying the first multiple to obtain a target bias voltage signal, and a second multiplying circuit 213b multiplying the temperature voltage signal VtAmplifying the second multiple to obtain target temperature voltage signal, and addingThe circuit 213b performs a superposition process on the target bias voltage signal and the target temperature voltage signal to obtain a target temperature compensation voltage signal VGAnd then the radio frequency signal is output to a power amplifier circuit to realize the compensation of the radio frequency input signal and generate a radio frequency output signal. In the present embodiment, the power amplifier circuit is a radio frequency power amplifier, i.e. the RF PA in fig. 2b, and the radio frequency OUTPUT signal is shown as RF OUTPUT, and the radio frequency INPUT signal is shown as RF INPUT. If m represents the first multiple and n represents the second multiple, it can be clearly seen from fig. 2a and 2b that in the technical solution provided by the present application, V isG＝m*Vbias+n*Vt。
In the current embodiment, in the technical scheme provided by the application, the first multiplying circuit 211 amplifies the bias voltage signal by the first multiple to obtain the target bias voltage signal, and the second multiplying circuit 212 acquires the temperature voltage signal to obtain the target temperature voltage signal, so that mutual independence of bias compensation and temperature compensation is realized, and devices forming the first multiplying circuit 211 or the second multiplying circuit 212 can be flexibly selected according to requirements.
Referring to fig. 3, fig. 3 is a schematic structural diagram of a radio frequency integrated circuit according to another embodiment of the present application. In the present embodiment, the temperature compensation processing circuit (not identified in fig. 3) includes an operational amplifier U1, a first resistor R1, a second resistor R2, a third resistor R3, and a fourth resistor R4. In fig. 3, R _ load1 represents the load resistor, VCC represents the power supply terminal, "+" represents the positive input terminal of the operational amplifier U1, and "-" represents the negative input terminal of the operational amplifier.
The operational amplifier U1 includes a positive input terminal, a negative input terminal, and an output terminal. The output end of the operational amplifier U1 is connected to the load resistor R _ load1, and is used for outputting the target temperature compensation voltage signal to the load resistor R _ load 1. In the present embodiment, the kind of the operational amplifier U1 is not limited, and LMC7101 may be used as U1.
The first resistor R1 and the second resistor R2 are connected in series between the ground voltage and the output terminal of the operational amplifier U1, and the node between the first resistor R1 and the second resistor R2 is connected to the negative input terminal of the operational amplifier U1. The output terminal of the second resistor R2 is connected to the output terminal of the operational amplifier U1 to form a feedback circuit of the operational amplifier U1.
One end of the third resistor R3 is connected to the output terminal of the external digital-to-analog converter (not shown in fig. 3) for receiving the bias voltage signal, and the other end of the third resistor R3 is connected to the positive input terminal of the operational amplifier U1.
One end of the fourth resistor R4 is used for receiving the temperature voltage signal, and the other end of the fourth resistor R4 is connected to the positive input end of the operational amplifier U1. It should be noted that, in the present embodiment, it is necessary for the first resistor R1, the second resistor R2, the third resistor R3, and the fourth resistor R4 to satisfy: the sum of the first resistor R1 and the second resistor R2 is equal to the sum of the third resistor R3 and the fourth resistor R4, i.e., R2+ R1 is R3+ R4. However, specific resistance values of the first resistor R1, the second resistor R2, the third resistor R3 and the fourth resistor R4 are not limited, and resistance values of the first resistor R1, the second resistor R2, the third resistor R3 and the fourth resistor R4 may be determined by a first multiple and a second multiple.
Specifically, in the present embodiment, the operational amplifier U1, the first resistor R1, the second resistor R2, the third resistor R3, and the fourth resistor R4 constitute a first multiplication circuit, a second multiplication circuit, and an addition circuit. In the current embodiment, the first multiple is a ratio of the fourth resistor R4 and the first resistor R1, and the second multiple is a ratio of the third resistor R3 and the first resistor R1, to amplify the bias voltage signal by the first multiple to obtain a target bias voltage signal, amplify the temperature voltage signal by the second multiple to obtain a target temperature voltage signal, and perform a superposition process on the target bias voltage signal and the target temperature voltage signal to obtain a target temperature compensation voltage signal.
With continued reference to fig. 3, in an embodiment, the rf integrated circuit provided in the present application further includes a temperature and voltage acquisition circuit (not shown). The temperature voltage acquisition circuit is used for acquiring temperature voltage signals. The input end of the temperature and voltage acquisition circuit is connected with a power supply end VCC, and the output end of the temperature and voltage acquisition circuit is connected with a fourth resistor R4.
Further, the temperature voltage acquisition circuit includes: a fifth resistor R5 and a temperature sensor D2. One end of the fifth resistor R5 receives a power supply voltage, i.e., a power supply terminal VCC, and the other end of the fifth resistor R5 is connected to the fourth resistor R4. One end of the temperature sensor D2 is connected to a node between the fourth resistor R4 and the fifth resistor R5, and the other end of the temperature sensor D2 is grounded to induce a temperature voltage signal at the node between the fourth resistor R4 and the fifth resistor R5.
Still further, in the current embodiment, the temperature sensor D2 is a diode or a transistor, and fig. 3 illustrates a case where the temperature sensor D2 is a diode. Specifically, the type of the temperature sensor D2 is selected according to the requirements of different embodiments, and is not limited herein.
The radio frequency integrated circuit provided by the application enables compensation of radio frequency offset to be more accurate through independence of temperature compensation and offset compensation, and meanwhile enables device selection of a temperature compensation processing circuit to be more flexible, all circuit frameworks are required to be adjusted without changing the type of the operational amplifier U1 and/or changing the temperature sensor D2, and meanwhile, the selection range of the operational amplifier and/or the temperature sensor during design of the temperature compensation processing circuit is expanded.
Referring to fig. 4, fig. 4 is a schematic structural diagram of an embodiment of a transmitter provided in the present application. In the present embodiment, the transmitter 40 includes an amplification filtering circuit 41, a mixing circuit 42, a radio frequency integrated circuit 43, a low pass filter 45, and an antenna 44.
The output end of the amplifying and filtering circuit 41 is connected to the input end of the mixing circuit 42, and the amplifying and filtering circuit 41 is configured to amplify and filter the received baseband signal and send the amplified baseband signal to the mixing circuit 42.
The output end of the mixing circuit 42 is connected to the input end of the rf integrated circuit 43, and is configured to perform mixing processing on the baseband signal output by the amplifying and filtering circuit 41 to obtain a radio frequency signal in a preset frequency band, and output the radio frequency signal to the rf integrated circuit 43.
The rf integrated circuit 43 is a circuit as described in at least one of fig. 1 to fig. 3 and the corresponding embodiments thereof, and the rf integrated circuit 43 is configured to amplify the rf signal output by the mixing circuit 42 to obtain the rf signal with the target power.
The antenna 44 is connected to an output terminal of the rf ic 43 through a low pass filter 45, and is configured to transmit an rf signal obtained by the rf ic after amplification and temperature compensation.
Further, please refer to fig. 5, fig. 5 is a schematic structural diagram of another embodiment of a transmitter according to the present application. In the embodiment shown in fig. 5, the radio frequency integrated circuit (not shown in fig. 5) may further include a radio frequency power amplifier 53. The transmitter 50 further includes a transmission filter 55, an input end of the transmission filter 55 is connected to an output end of the mixer circuit 52, and is configured to perform filtering processing on the radio frequency signal processed by the amplification filter 51 and the mixer circuit 52, an output end of the transmission filter 55 is connected to a gate end of the radio frequency power amplifier 53, and is configured to send the radio frequency signal to the radio frequency power amplifier 53 to obtain a radio frequency signal of a target power, the radio frequency power amplifier 53 outputs the radio frequency signal to the low pass filter 56, and sends the radio frequency signal to the antenna 54 after being filtered by the low pass filter 56, and then the antenna 54 sends out the received radio frequency signal.
Referring to fig. 6, fig. 6 is a schematic structural diagram of an embodiment of a mobile terminal according to the present application. In the present embodiment, the mobile terminal 60 includes a receiver 61 and a transmitter 62, and in the present embodiment, the transmitter 62 and the receiver 61 may share an antenna (not shown in fig. 6), and then connect with the antenna by providing a switch circuit (not shown in fig. 6) for selectively connecting the antenna with the main body of the transmitter 62 or connecting the antenna with the main body of the receiver 61, and the switch circuit can only connect one of the transmitter 62 or the receiver 61 at the same time. It should be noted that in other embodiments, the transmitter 62 and the receiver 61 may also share other devices, such as a voltage controlled oscillator (not shown in fig. 6), which are not all listed here.
The transmitter 62 is configured to convert the baseband signal into a radio frequency signal and transmit the radio frequency signal, and the transmitter 62 is a transmitter as described in fig. 4 and any of its corresponding embodiments.
The receiver 61 is configured to receive a radio frequency signal in a preset frequency band, and convert the radio frequency signal in the preset frequency band into a baseband signal.
Further, in the current embodiment, the mobile terminal 60 provided in the present application may be an interphone, a mobile phone, a base station, and the like. In other embodiments, the mobile terminal 60 provided herein may also include other types of devices, which are not specifically listed herein.
The above description is only for the purpose of illustrating embodiments of the present application and is not intended to limit the scope of the present application, and all modifications of equivalent structures and equivalent processes, which are made by the contents of the specification and the drawings of the present application or are directly or indirectly applied to other related technical fields, are also included in the scope of the present application.
Claims (10)
1. A radio frequency integrated circuit, comprising:
the temperature compensation processing circuit is used for receiving a bias voltage signal and acquiring a temperature voltage signal, amplifying the bias voltage signal by a first multiple to obtain a target bias voltage signal, amplifying the temperature voltage signal by a second multiple to obtain a target temperature voltage signal, and performing superposition processing on the target bias voltage signal and the target temperature voltage signal to obtain a target temperature compensation voltage signal;
and the power amplifier circuit is connected with the temperature compensation processing circuit and receives the radio frequency input signal so as to carry out temperature compensation on the radio frequency input signal by using the target temperature compensation voltage signal, thereby generating a corresponding radio frequency output signal.
2. The radio frequency integrated circuit of claim 1, wherein the warm-up processing circuit comprises:
the first multiplication circuit is used for acquiring the bias voltage signal and a first multiple so as to amplify the bias voltage signal by the first multiple to obtain the target bias voltage signal;
the second multiplying circuit is used for acquiring the temperature voltage signal and a second multiple so as to amplify the acquired temperature voltage signal by the second multiple to obtain a target temperature voltage signal;
and the addition circuit is used for carrying out superposition processing on the target bias voltage signal and the target temperature voltage signal so as to obtain the target temperature compensation voltage signal.
3. The radio frequency integrated circuit of claim 2, wherein the warm-up processing circuit comprises:
an operational amplifier comprising a positive input, a negative input, and an output;
a first resistance (R1);
a second resistor (R2), wherein the first and second resistors are connected in series between ground and an output of the operational amplifier, and a node between the first and second resistors is connected to a negative input of the operational amplifier;
a third resistor (R3), wherein one end of the third resistor is connected to the output end of the external digital-to-analog converter to receive the bias voltage signal, and the other end of the third resistor is connected to the positive input end of the operational amplifier;
a fourth resistor (R4), wherein one end of the fourth resistor is used for receiving the temperature voltage signal, and the other end of the fourth resistor is connected to the positive input end of the operational amplifier;
the operational amplifier, the first resistor, the second resistor, the third resistor and the fourth resistor form the first multiplying circuit, the second multiplying circuit and the adding circuit, the first multiple is the ratio of the fourth resistor to the first resistor, the second multiple is the ratio of the third resistor to the first resistor, the bias voltage signal is amplified by the first multiple to obtain a target bias voltage signal, the temperature voltage signal is amplified by the second multiple to obtain a target temperature voltage signal, and the target bias voltage signal and the target temperature voltage signal are subjected to superposition processing to obtain a target temperature compensation voltage signal.
4. The radio frequency integrated circuit of claim 3, wherein a sum of the first resistance and the second resistance is equal to a sum of the third resistance and the fourth resistance.
5. The radio frequency integrated circuit of claim 4, further comprising:
and the temperature and voltage acquisition circuit is used for acquiring the temperature and voltage signal.
6. The radio frequency integrated circuit of claim 5, wherein the temperature voltage acquisition circuit comprises:
a fifth resistor having one end receiving a power supply voltage and the other end connected to the fourth resistor;
and one end of the temperature sensor is connected to a node between the fourth resistor and the fifth resistor, and the other end of the temperature sensor is grounded so as to induce and generate the temperature voltage signal at the node between the fourth resistor and the fifth resistor.
7. The RF integrated circuit of claim 6, wherein the temperature sensor is a diode or a transistor.
8. A transmitter, comprising an amplifying and filtering circuit, a mixer circuit, a radio frequency integrated circuit, a low pass filter, and an antenna;
the output end of the amplifying and filtering circuit is connected with the input end of the mixing circuit, and the amplifying and filtering circuit is used for amplifying and filtering the received baseband signal and sending the baseband signal to the mixing circuit;
the output end of the frequency mixing circuit is connected with the input end of the radio frequency integrated circuit and is used for carrying out frequency mixing processing on the baseband signal output by the amplifying and filtering circuit so as to obtain a radio frequency signal of a preset frequency band and outputting the radio frequency signal to the radio frequency integrated circuit;
the radio frequency integrated circuit is the circuit according to any one of claims 1 to 7, and is configured to amplify the radio frequency signal output by the mixer circuit to obtain the radio frequency signal with a target power;
the antenna is connected with the output end of the radio frequency integrated circuit through the low-pass filter and used for transmitting the radio frequency signal.
9. The transmitter of claim 8,
the radio frequency integrated circuit comprises a radio frequency power amplifier;
the transmitter further comprises a transmitting filter, wherein the input end of the transmitting filter is connected with the output end of the mixing circuit, and the output end of the transmitting filter is connected with the gate end of the radio-frequency power amplifier and used for sending the radio-frequency signal to the radio-frequency power amplifier so as to obtain the radio-frequency signal with target power.
10. A mobile terminal, characterized in that the mobile terminal comprises a receiver and a transmitter, the transmitter is configured to convert a baseband signal into a radio frequency signal and transmit the radio frequency signal, the transmitter is according to any one of claims 8 or 9, and the receiver is configured to receive a radio frequency signal in a predetermined frequency band and convert the radio frequency signal in the predetermined frequency band into a baseband signal.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113900471A (en) * | 2021-12-09 | 2022-01-07 | 深圳市时代速信科技有限公司 | Bias control loop of PA chip |
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| CN106788282A (en) * | 2016-12-16 | 2017-05-31 | 锐迪科微电子（上海）有限公司 | A kind of device and method for improving dynamic error amplitude of the vector |
| CN110011622A (en) * | 2019-04-15 | 2019-07-12 | 厦门雷迅科微电子股份有限公司 | A kind of biasing circuit of radio-frequency power amplifier |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113900471A (en) * | 2021-12-09 | 2022-01-07 | 深圳市时代速信科技有限公司 | Bias control loop of PA chip |
| CN113900471B (en) * | 2021-12-09 | 2022-03-18 | 深圳市时代速信科技有限公司 | Bias control loop of PA chip |
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