CN112953445B - Resonator and method for manufacturing resonator - Google Patents
Resonator and method for manufacturing resonator Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 title abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 239000000463 material Substances 0.000 claims abstract description 52
- 229920000334 poly[3-(3'-N,N,N-triethylamino-1-propyloxy)-4-methylthiophene-2,5-diyl hydrochloride] polymer Polymers 0.000 claims abstract description 38
- 238000010897 surface acoustic wave method Methods 0.000 claims description 25
- 238000000151 deposition Methods 0.000 claims description 16
- 238000001816 cooling Methods 0.000 claims description 9
- 229910020231 Pb(Mg1/3Nb2/3)O3-xPbTiO3 Inorganic materials 0.000 claims description 7
- 229910020226 Pb(Mg1/3Nb2/3)O3−xPbTiO3 Inorganic materials 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 229910003460 diamond Inorganic materials 0.000 claims description 7
- 239000010432 diamond Substances 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 348
- 230000008878 coupling Effects 0.000 description 50
- 238000010168 coupling process Methods 0.000 description 50
- 238000005859 coupling reaction Methods 0.000 description 50
- 238000010586 diagram Methods 0.000 description 31
- 230000008859 change Effects 0.000 description 18
- 239000002184 metal Substances 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000013078 crystal Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 7
- 239000000956 alloy Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 238000004891 communication Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 241001290864 Schoenoplectus Species 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
Abstract
The present application provides a resonator and a method for manufacturing the resonator, wherein the resonator comprises: a substrate; a reflection layer formed on a substrate and including one or more sonic layer groups formed stacked on each other, the sonic layer groups including a first sonic layer and a second sonic layer formed on the first sonic layer and having a sonic velocity less than that of the first sonic layer; and a piezoelectric layer formed of a PMNT material and formed on the reflective layer.
Description
Technical Field
The present application relates to an electronic device, and more particularly, to a resonator and a method of manufacturing the resonator.
Background
Surface acoustic waves (SAW: surface acoustic wave), bulk Acoustic Waves (BAW), and film bulk acoustic waves (FBAR) are currently the three dominant technologies in the field of mobile device filters. The low-frequency and medium-frequency bands are mainly SAW filters, and the Surface Acoustic Wave (SAW) device is an electronic device working by using the surface acoustic wave of the surface of the piezoelectric material based on the piezoelectric effect of the piezoelectric material, and converts an electric input signal into the surface acoustic wave by using an interdigital transducer (IDT: interdigital transducer) (a metal electrode periodic structure, the shape of which is like the intersection of two hands) formed on the surface of the piezoelectric material, which is a key component of the communication equipment nowadays.
As one of the surface acoustic wave devices, a surface acoustic wave resonator (hereinafter, sometimes simply referred to as a SAW resonator) is widely used in a signal receiver front end, a duplexer, a reception filter, and the like. SAW resonators have low insertion loss and good rejection performance, and can achieve a wider bandwidth and smaller volume.
With the rapid development of the communication field, SAW resonators have evolved from Normal-SAW (general SAW) resonators, TC-SAW (temperature compensated SAW) resonators, to IHP-SAW (ultra high performance SAW) resonators, and to future XBAR technology, and so on.
Among them, the IHP-SAW technology described above originates from village manufacturing institute, which adopts a hybrid technology of a multilayer reflective gate structure similar to SAW device+SMR-BAW device. The IHP-SAW filter can provide a higher quality factor Q, better frequency temperature characteristics, improved heat dissipation, and the like, compared to conventional types of resonators such as BWP-SAW resonators. As communication technology advances, the demand for resonators with excellent performance has been increasing year by year, and the demand for frequency expansion, further miniaturization, multiband implementation, and the like has also increased. In such an environment, IHP-SAW resonators are expected to become increasingly important in the future.
Disclosure of Invention
Technical problem to be solved by the invention
However, the electromechanical coupling coefficient K of the conventional IHP-SAW resonator 2 (also written as k) 2 ) Less than or equal to 8 percent. This clearly fails to meet the large bandwidth, high performance communication requirements of 5G communication technology.
The present invention has been made in view of the above-described conventional problems, and an object thereof is to provide a resonator and a method for manufacturing the same, which can obtain a multilayer film resonator such as an IHP-SAW resonator having a large bandwidth and high performance, and which satisfies the demands of 5G and future communication technologies for a SAW resonator having a large bandwidth and high performance.
Technical proposal for solving the technical problems
In one embodiment of the present invention to solve the above-mentioned problems, there is provided a resonator characterized by comprising:
a substrate;
a reflective layer formed on the substrate and including one or more sonic group of layers stacked on top of each other, the sonic group of layers including:
a first sonic layer; and
a second sonic layer formed on the first sonic layer and having a sonic velocity less than a sonic velocity of the first sonic layer; and
and a piezoelectric layer formed of a PMNT material and formed on the reflective layer.
In one embodiment of the invention, the PMNT material is a material having the formula (1-x) Pb (Mg 1/3Nb 2/3) O3-xPbTiO3, and where x is a value in the range of 0.33 to 0.35.
In an embodiment of the present invention, the resonator further includes an electrode formed on an upper surface of the piezoelectric layer or a lower surface of the piezoelectric layer, or on both the upper surface and the lower surface of the piezoelectric layer.
In an embodiment of the invention, the piezoelectric layer has a sound velocity that is less than the sound velocity of the first sound velocity layer and greater than the sound velocity of the second sound velocity layer.
In an embodiment of the present invention, the first sonic velocity layer is formed of one or more of SiC, siN, diamond, si, and AlN.
In one embodiment of the present invention, the second sound-velocity layer is made of SiO 2 One or more of SiFO and SiON.
In an embodiment of the invention, the electrodes are formed of Ti, al, cr, cu, au, pt, ag, pd, ni or an alloy thereof, or a laminate of these metals or alloys.
In one embodiment of the present invention to solve the above-described problems, there is provided a manufacturing method of manufacturing a resonator, including:
Depositing a first sonic layer on an upper surface of a substrate;
depositing a second sonic layer on the upper surface of the first sonic layer, the second sonic layer having a sonic velocity less than the sonic velocity of the first sonic layer;
depositing an electrode on an upper surface or a lower surface of a piezoelectric layer formed of a PMNT material, or on both the upper surface and the lower surface of the piezoelectric layer;
bonding the lower surface of the piezoelectric layer and the upper surface of the second sound speed layer at a bonding temperature; and
after bonding is completed, cooling is performed.
In one embodiment of the present invention to solve the above-described problems, there is provided a manufacturing method of manufacturing a resonator, including:
depositing a reflective layer on an upper surface of the substrate, the reflective layer formed by alternately depositing one or more sonic groups of layers, the sonic groups of layers comprising:
a first sonic layer; and
a second sound velocity layer formed on the first sound velocity layer by deposition and having a sound velocity smaller than that of the first sound velocity layer;
depositing an electrode on an upper surface or a lower surface of a piezoelectric layer formed of a PMNT material, or on both the upper surface and the lower surface of the piezoelectric layer;
Bonding the lower surface of the piezoelectric layer and the upper surface of the second sound speed layer on the top of the reflecting layer at a bonding temperature; and
after bonding is completed, cooling is performed.
In an embodiment of the present invention, in the above manufacturing method, the bonding temperature is 300 ℃ or less, and a cooling rate at which cooling is performed after bonding is completed is 15 ℃/s or less.
Effects of the invention
According to the present invention, a multilayer film resonator excellent in combination of large bandwidth, high performance, high quality Factor (FOM), high performance and no spurious can be obtained.
Further, according to the present invention, by using SiO 2 The second sound velocity layer is formed by SiFO, siON and the like, so that the frequency temperature coefficient of the resonator can be reduced, the frequency drift can be restrained, and the yield can be improved.
Drawings
So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings, wherein like reference numerals have been used, to facilitate an understanding, to identify identical elements that are common to the various figures. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments, and that:
Fig. 1 is a schematic diagram of a resonator according to the present invention.
Fig. 2 is a schematic diagram of a sound velocity packet of a resonator according to the present invention.
FIG. 3 is a graph showing the Curie temperature of PMNT materials according to the present invention as a function of PT concentration.
Fig. 4 is a schematic diagram showing the change of the electromechanical coupling coefficient of the resonator according to the present invention with the thickness of the electrode.
Fig. 5 is a schematic diagram showing the change of the electromechanical coupling coefficient of the resonator according to the present invention with the piezoelectric thickness.
Fig. 6 is a schematic diagram showing the variation of the electromechanical coupling coefficient of the resonator according to the present invention with the thickness of the first sonic layer.
Fig. 7 is a schematic diagram showing the change of the electromechanical coupling coefficient of the resonator according to the present invention with the thickness of the second acoustic layer.
Fig. 8 is a schematic diagram showing the change of the electromechanical coupling coefficient of the resonator according to the present invention with the number of sonic groups of layers.
Fig. 9 is a schematic diagram showing the change of the quality factor of the resonator according to the present invention with the thickness of the electrode.
Fig. 10 is a schematic diagram showing the change of the quality factor of the resonator according to the present invention with the thickness of the piezoelectric layer.
Fig. 11 is a schematic diagram showing the change in quality factor of a resonator according to the present invention with the thickness of the first sonic layer.
Fig. 12 is a schematic diagram showing the change of the quality factor of the resonator according to the present invention with the thickness of the second acoustic layer.
Fig. 13 is a schematic diagram showing the change in quality factor of a resonator according to the present invention with the number of sonic groups of layers.
Fig. 14 is a schematic diagram showing the admittance of the resonator according to the present invention in the case where the electrode thickness is 280nm, the first acoustic velocity layer thickness is 5λ, the second acoustic velocity layer thickness is 0.3λ, and there are 1 acoustic velocity layer groups.
Fig. 15 is a schematic diagram showing the admittance of the resonator according to the present invention in the case where the electrode thickness is 300nm, the first acoustic velocity layer thickness is 5λ, the second acoustic velocity layer thickness is 0.1λ, and there are 1 acoustic velocity layer groups.
Fig. 16 is a schematic diagram showing the admittance of the resonator according to the present invention in the case where the electrode thickness is 300nm, the first acoustic velocity layer thickness is λ, the second acoustic velocity layer thickness is 0.1λ, and there are 1 acoustic velocity layer groups.
Fig. 17 is a schematic diagram showing the admittance of the resonator according to the present invention in the case where the electrode thickness is 300nm, the first acoustic velocity layer thickness is 5λ, the second acoustic velocity layer thickness is 0.3λ, and there are 2 acoustic velocity layer groups.
Fig. 18 is a schematic diagram showing the admittance of the resonator according to the present invention in the case where the electrode thickness is 300nm, the first acoustic velocity layer thickness is 5λ, the second acoustic velocity layer thickness is 0.3λ, and there are 1 acoustic velocity layer groups.
Fig. 19 is a graph showing changes in electromechanical coupling coefficient and quality factor of a resonator according to the present invention with thicknesses of an electrode, a piezoelectric layer, a first acoustic velocity layer, a second acoustic velocity layer, and an acoustic velocity layer group.
Fig. 20 is a schematic view of a manufacturing process of a resonator according to the present invention.
Fig. 21 is a flowchart of a manufacturing process of the resonator according to the present invention.
It is contemplated that elements of one embodiment of the present invention may be beneficially employed in other embodiments without further recitation.
Detailed Description
Other advantages and technical effects of the present invention will become apparent to those skilled in the art from the present disclosure, by the following description of specific embodiments. Furthermore, the invention is not limited to the following embodiments, but may be practiced or applied by other different embodiments, and various modifications and alterations may be made to the specific details in the present description without departing from the spirit of the invention.
Hereinafter, specific embodiments of the present invention will be described in detail based on the drawings. The drawings are for simplicity and are not drawn to scale, and the actual dimensions of the structures are not shown. For ease of understanding, the same reference numbers are used in the various figures to denote the same elements in common in the figures. The drawings are not to scale and may be simplified for clarity. Elements and features of one embodiment may be advantageously incorporated into other embodiments without further recitation.
Applicants have found that lead-based composite perovskite relaxor ferroelectric single crystals (1-x) Pb (Mg 1/3 Nb 2/3 )O 3 -xPbTiO 3 The (PMNT) material is made of a relaxor ferroelectric Pb (Mg 1/3 Nb 2/3 )O 3 (PMN) and normal ferroelectric PbTiO 3 ABO of (PT) composition 3 Solid solutions of perovskite structure wherein the A-position is Pb 2+ Ion, B is Mg 2+ 、Nb 5+ 、Ti 4+ Ions. At x in the range of 0.3 to 0.35, there is a three-party-tetragonal morphotropic phase boundary (MPB: morphotropic Phase Boundary) in the PMNT material. Within this range, extreme conditions occur for the various characteristics of the PMNT material, and with the x value, the phase structure of the PMNT changes: when x is less than 0.3, the PMNT material exists in a three-phase form; when x is 0.3 to 0.35, the phases coexist in the PMNT material; when x is greater than 0.35, the PMNT material exists in tetragonal phase form. PMNT single crystals when x is 0.30 to 0.35 and [001 ]]The PMNT single crystal material has excellent piezoelectric properties, such as piezoelectric constant d, and excellent piezoelectric properties 33 Reaches more than 1500pC/N, is 4-5 times higher than PZT ceramic, has an electro-induced strain of 1.7 percent, is an order of magnitude higher than PZT ceramic, and has an electromechanical coupling coefficient k 33 The electromechanical coupling coefficient of the piezoelectric ceramic is over 90 percent and is obviously higher than that of the PZT ceramic by about 70 percent, so that the piezoelectric ceramic has huge and wide application prospect in the aspects of ultrasonic transducers, drivers, sensing devices and the like.
In order to improve various characteristics of dielectric properties, piezoelectric properties, and electromechanical coupling properties of the resonator, the resonator is fabricated using PMNT materials in embodiments of the present invention.
Example 1 ]
The Normal-SAW resonator according to the present invention will be described below with reference to fig. 1 to 19.
First, a structure of a multilayer film resonator according to the present invention will be described with reference to fig. 1.
Fig. 1 is a schematic view of a multilayer film resonator according to the present invention.The material of the substrate 1 may be diamond, si, or the like. In the multilayer film resonator of the present embodiment, the material of the substrate 1 is Si. The thickness of the substrate 1 may be adjusted according to the product design and may be 300 μm to 600 μm, for example. A reflective layer is formed on the substrate 1, the reflective layer comprising one or more sonic packets 4 (also referred to as bragg reflective layers). That is, the reflective layer includes n sonic groups of layers 4, n+.1 (by way of non-limiting example, FIG. 1 shows that the reflective layer includes only one sonic group of layers 4). As an example, the reflective layer may comprise 1 to 10 sonic groups of layers 4. Each of the one or more sonic groups 4 includes a first sonic layer 2 and a second sonic layer 3. The first sonic velocity layer 2 (which may also be referred to as a high sonic velocity layer) is composed of a high sonic velocity layer material, such as SiC, siN, diamond, si, alN, or the like. The thickness of the first sonic layer 2 may be determined according to the wavelength λ (λ=1μm, as an example) of the sonic wave excited by the electrode finger, and may be, for example, 1 λ to 10 λ. A second sound velocity layer 3 is formed on the first sound velocity layer 2. The second sonic layer 3 (also referred to as a low sonic layer) is composed of a material having a lower sonic velocity than the first sonic layer 2, such as SiO 2 SiFO, siON, etc. The thickness of the second sound-velocity layer 3 may be determined according to the wavelength λ (λ=1μm, as an example) of the sound wave excited by the electrode finger, and may be, for example, 0.1λ to 2λ. A piezoelectric layer 5 is formed on the reflective layer (i.e., on the second acoustic layer 3 of the acoustic velocity layer group 4 located at the topmost portion). The piezoelectric layer 5 may be formed of PMNT material. The thickness of the piezoelectric layer 5 may be determined according to the wavelength λ (λ=1μm, as an example) of the acoustic wave excited by the electrode finger, and may be, for example, 0.5λ to 2λ. Wherein in the present embodiment, the material of the piezoelectric layer 5 is PMNT single crystal, and its chemical formula is (1-x) Pb (Mg 1/3 Nb 2/3 )O 3 -xPbTiO 3 Wherein x is 0.33 to 0.35, and the polarization direction thereof is [001 ]]Direction. Since the PMNT single crystal as the material of the piezoelectric layer 5 has a negative frequency temperature coefficient, and the SiO as the material of the second acoustic layer 3 2 Has positive frequency temperature coefficient, siO 2 The structure combined with PMNT can reduce the absolute value of the frequency temperature coefficient of the resonator. The piezoelectric layer 5 is provided with electrodes 6, and the duty ratio (duty ratio eta=electrode width/(electrode width+electrode distance)) of the electrodes 6 and the number of the electrodes 6 can be adjusted according to the design of the product. As non-part ofBy way of a limiting example, the duty cycle of the electrode 6 is 0.5 and the logarithm of the electrode 6 is 1000. The electrode 6 may be made of a metal or an alloy such as Ti, al, cr, cu, au, pt, ag, pd, ni, or a laminate of these metals or alloys. The thickness of the electrode 6 may be adjusted according to the design of the product, and may be, for example, 100nm to 400nm. The electrodes may be formed on the upper surface of the piezoelectric layer 15, may be formed on the lower surface of the piezoelectric layer 15, or may be formed on both the upper and lower surfaces of the piezoelectric layer 15. The structure of the electrode 6 may be a single-layer structure or a multi-layer structure. The structure of the electrode 6 is preferably a multilayer structure. The electrode 6 is further preferably formed by laminating two metal layers of a first layer formed of Ni, ti or Cr and a second layer formed of Pt, al or al—cu. Electromechanical coupling coefficient K 2 ＝(π 2 /8)(f p 2 -f s 2 )/f s 2 Wherein f s For resonance frequency f p Is the antiresonant frequency. By measuring f s F p Can calculate and obtain the electromechanical coupling coefficient K 2 . Furthermore, the center frequency f of the resonator 0 = (antiresonance frequency f p +resonant frequency f s )/2。
The resonator of the present embodiment may be used as a multilayer film resonator, or may be used as another type of resonator as needed.
Next, the sound velocity group 4 of the present embodiment will be further described with reference to fig. 2.
As shown in fig. 2, one sonic group 4 is composed of a first sonic layer 2 and a second sonic layer 3, wherein the second sonic layer 3 is formed on the first sonic layer 2. As a non-limiting example, the sonic relationship between the first sonic layer 2, the second sonic layer 3, and the piezoelectric layer 5 is as follows: the sound velocity of the second sound velocity layer 3 < the sound velocity of the piezoelectric layer 5 < the sound velocity of the first sound velocity layer 2. Because the acoustic impedances of the first acoustic velocity layer 2, the second acoustic velocity layer 3 and the piezoelectric layer 5 are different, the sound waves can be reflected when encountering interfaces with different acoustic impedances. The sonic group 4 reflects sound waves leaking toward the substrate 2, thereby reducing energy leakage and improving the quality factor.
Next, the performance of the resonator of the present embodiment will be described using fig. 3 to 19.
FIG. 3 is a graphical representation of Curie temperature as a function of PT concentration for PMNT materials in accordance with the present invention. As shown in FIG. 3, the PMNT material has a three-square quasi-homotypic phase boundary (MPB: morphotropic Phase Boundary) in the case that x is within 0.3-0.35. In this range, x is 0.3 to 0.35, the characteristics of the PMNT material are extremely high, and thus the PMNT material has excellent dielectric properties, piezoelectric properties, and the like. With different values of x, the phase structure of the PMNT material also changes: when x is less than 0.3, the PMNT material exists in a three-phase form and contains 71 DEG, 109 DEG and 180 DEG domains; when x is 0.3-0.35, the PMNT material is coexistent with multiphase; when x is greater than 0.35, the PMNT material exists in the form of tetragonal phase, containing 90 ° and 180 ° domains, and has good birefringence characteristics.
In fig. 4 to 19 below, the substrate 1 is made of diamond, the first sonic layer 2 is made of SiC, and the second sonic layer 3 is made of SiO 2 A resonator in which the material of the piezoelectric layer 5 is PMNT and the material of the electrode 6 is Al will be described as an example. In fig. 4 to 19, "hSi" represents the thickness of the substrate 1, "hSiC" represents the thickness of the first sonic velocity layer 2, "hSiO 2 "represents the thickness of the second acoustic layer 3," hPMNT "represents the thickness of the piezoelectric layer 5, and" hAl "represents the thickness of the electrode 6.
Fig. 4 is a schematic diagram showing the change of the electromechanical coupling coefficient of the resonator according to the present invention with the thickness of the electrode. Wherein the ordinate represents the electromechanical coupling coefficient K 2 The abscissa indicates the thickness of the electrode 6. Fig. 4 is drawn by: maintaining the parameters of 500 μm thickness of the substrate 1 of the resonator, 5 lambda thickness of the first acoustic velocity layer 2, 0.3 lambda thickness of the second acoustic velocity layer 3, 1 number of acoustic velocity layer groups 4, lambda thickness of the piezoelectric layer 5, and 0.5 duty cycle eta of the electrode 6 constant, varying the thickness of the electrode 6 in the range of 100nm to 400nm, and measuring f for resonators having electrodes 6 of different thicknesses s And f p And is based on f s And f p Calculating the electromechanical coupling coefficient K 2 To draw. As shown in FIG. 4, when the thickness of the electrode 6 is 100nm to the upperAt 225nm, the electromechanical coupling coefficient increases in a wavy manner with increasing electrode thickness; when the thickness of the electrode 6 is 225nm to 400nm, the electromechanical coupling coefficient floats up and down at 29% as the electrode thickness increases. When the thickness of the electrode 6 of the resonator in the present embodiment is 320nm, the thickness of the substrate 1 is 500 μm, the thickness of the first sonic layer 2 is 5λ, the thickness of the second sonic layer 3 is 0.3λ, the number of sonic layer groups 4 is 1, the thickness of the piezoelectric layer 5 is λ, and the duty ratio η of the electrode 6 is 0.5, the electromechanical coupling coefficient K of the resonator 2 Is larger, 31.32%.
Fig. 5 is a schematic diagram showing the change of the electromechanical coupling coefficient of the resonator according to the present invention with the thickness of the piezoelectric layer. Wherein the ordinate represents the electromechanical coupling coefficient K 2 The abscissa indicates the thickness of the piezoelectric layer 5. Fig. 5 is drawn by: maintaining the parameters of 500 μm thickness of the substrate 1 of the resonator, 5 lambda thickness of the first sonic layer 2, 0.3 lambda thickness of the second sonic layer 3, 1 number of sonic groups 4, 300nm thickness of the electrode 6, and 0.5 duty cycle eta of the electrode 6 constant, varying the thickness of the piezoelectric layer 5 in the range of 0.5 lambda to 2 lambda, and measuring f for resonators having piezoelectric layers 5 of different thicknesses s And f p And is based on f s And f p Calculating the electromechanical coupling coefficient K 2 To draw. As shown in fig. 5, when the thickness of the piezoelectric layer 5 is 0.5λ to 1.5λ, the electromechanical coupling coefficient of the resonator decreases as the thickness of the piezoelectric layer 5 increases; when the thickness of the piezoelectric layer 5 is 1.5λ to 2λ, the electromechanical coupling coefficient of the resonator increases as the thickness of the piezoelectric layer 5 increases. When the thickness of the piezoelectric layer 5 of the resonator in the present embodiment is 0.5λ, the thickness of the substrate 1 is 350 μm, the thickness of the first acoustic velocity layer 2 is 5λ, the thickness of the second acoustic velocity layer 3 is 0.3λ, the number of acoustic velocity layer groups 4 is 1, the thickness of the electrode 6 is 300nm, and the duty ratio η of the electrode 6 is 0.5, the electromechanical coupling coefficient K of the resonator 2 Is larger, 28.26%.
Fig. 6 is a schematic diagram showing the variation of the electromechanical coupling coefficient of the resonator according to the present invention with the thickness of the first sonic layer. Wherein the ordinate represents the electromechanical coupling coefficient K 2 Horizontal sittingThe scale indicates the thickness of the first sonic layer 2. Fig. 6 is drawn by: maintaining the parameters of 500 μm thickness of the substrate 1 of the resonator, 0.3λ thickness of the second acoustic velocity layer 3, 1 number of acoustic velocity layer groups 4, λ thickness of the piezoelectric layer 5, 300nm thickness of the electrode 6, and 0.5 duty cycle η of the electrode 6 constant, varying the thickness of the first acoustic velocity layer 2 in the range of λ to 10λ, and measuring f for resonators having first acoustic velocity layers 2 of different thicknesses s And f p And is based on f s And f p Calculating the electromechanical coupling coefficient K 2 To draw. As shown in fig. 6, when the thickness of the first sonic velocity layer 2 is 1.5λ to 2λ, the electromechanical coupling coefficient of the resonator increases as the thickness of the first sonic velocity layer 2 increases; when the thickness of the first sonic velocity layer 2 is 2λ to 10λ, the electromechanical coupling coefficient of the resonator floats up and down at 29% as the thickness of the first sonic velocity layer 2 increases. When the thickness of the first sonic layer 2 of the resonator in the present embodiment is 7λ, the thickness of the substrate 1 is 500 μm, the thickness of the second sonic layer 3 is 0.3λ, the number of sonic layer groups 4 is 1, the thickness of the piezoelectric layer 5 is λ, the thickness of the electrode 6 is 300nm, and the duty ratio η of the electrode 6 is 0.5, the electromechanical coupling coefficient K of the resonator 2 Is larger, 31.58%.
Fig. 7 is a schematic diagram showing the change of the electromechanical coupling coefficient of the resonator according to the present invention with the thickness of the second acoustic layer. Wherein the ordinate represents the electromechanical coupling coefficient K 2 The abscissa indicates the thickness of the second sound velocity layer 3. Fig. 7 is drawn by: keeping the parameters of the thickness of the substrate 1 of the resonator 500 μm, the thickness of the first sonic layer 2 5 lambda, the number of sonic layer groups 4 1, the thickness of the piezoelectric layer 5 lambda, the thickness of the electrode 6 300nm, and the duty cycle eta of the electrode 6 0.5 constant, varying the thickness of the second sonic layer 3 in the range of 0.1 lambda to 2 lambda, and measuring f for resonators having second sonic layers 3 of different thicknesses s And f p And is based on f s And f p Calculating the electromechanical coupling coefficient K 2 To draw. As shown in fig. 7, when the thickness of the second sound velocity layer 3 is 0.1λ -2λ, the electromechanical coupling coefficient of the resonator is distributed in a shape similar to a sine wave. When the thickness of the second acoustic velocity layer 3 of the resonator in the present embodiment is 0.8λ, the thickness of the substrate 1 is 500 μm, the thickness of the first acoustic velocity layer 2 is 5λ, the number of acoustic velocity layer groups 4 is 1, the thickness of the piezoelectric layer 5 is λ, the thickness of the electrode 6 is 300nm, and the duty ratio η of the electrode 6 is 0.5, the electromechanical coupling coefficient K of the resonator 2 Is larger, 32.39%.
Fig. 8 is a schematic diagram showing the change of the electromechanical coupling coefficient of the resonator according to the present invention with the number of sonic groups of layers. Wherein the ordinate represents the electromechanical coupling coefficient K 2 The abscissa indicates the number of sound velocity groups 4. Fig. 8 is drawn by: maintaining the parameters of 500 μm thickness of the substrate 1 of the resonator, 5. Lambda. Thickness of the first sonic layer 2, 0.3. Lambda. Thickness of the second sonic layer 3, 0.3. Lambda. Thickness of the piezoelectric layer 5, 300nm thickness of the electrode 6, and 0.5 duty cycle eta of the electrode 6 constant, varying the number of sonic groups of layers 4 in the range of 1 to 5, and measuring f for resonators having different numbers of sonic groups of layers 4 s And f p And is based on f s And f p Calculating the electromechanical coupling coefficient K 2 To draw. As shown in fig. 8, as the number of sonic velocity packets 4 increases, the electromechanical coupling coefficient of the resonator increases first, then decreases, and then increases. When the number of sonic velocity groups 4 of the resonator in the present embodiment is 2, the thickness of the substrate 1 is 500 μm, the thickness of the first sonic velocity layer 2 is 5λ, the thickness of the second sonic velocity layer 3 is 0.3λ, the thickness of the piezoelectric layer 5 is λ, the thickness of the electrode 6 is 300nm, and the duty ratio η of the electrode 6 is 0.5, the electromechanical coupling coefficient K of the resonator 2 Is larger, 30.75%.
Fig. 9 is a schematic diagram showing the change of the quality factor of the resonator according to the present invention with the thickness of the electrode. Wherein the ordinate represents the electromechanical coupling coefficient K 2 The abscissa indicates the thickness of the electrode 6. Fig. 9 is drawn by: the thickness of the substrate 1 of the resonator is kept to be 500 μm, the thickness of the first acoustic velocity layer 2 is 5 lambda, the thickness of the second acoustic velocity layer 3 is 0.3 lambda, the number of acoustic velocity layer groups 4 is 1, the thickness of the piezoelectric layer 5 is lambda, and the duty ratio eta of the electrode 6 is 0.5, so that the thickness of the electrode 6 is in the range of 30nm to 300nmThe in-wall variation and the quality factor Q was measured and calculated for resonators with electrodes 6 of different thickness to be plotted. As shown in fig. 9, when the thickness of the electrode 6 is 100nm to 150nm, the quality factor Q of the resonator decreases as the electrode thickness increases; when the thickness of the electrode 6 is 150nm to 400nm, the quality factor Q of the resonator increases in a wavy shape as the thickness of the electrode increases. When the thickness of the electrode 6 is 340nm, the quality factor Q of the resonator is large, 1225.
Fig. 10 is a schematic diagram showing the change of the quality factor of the resonator according to the present invention with the thickness of the piezoelectric layer. Wherein the ordinate indicates the quality factor Q and the abscissa indicates the thickness of the piezoelectric layer 5. Fig. 10 is drawn by: the parameters of the substrate 1 of the resonator having a thickness of 500 μm, the first sonic layer 2 having a thickness of 5λ, the second sonic layer 3 having a thickness of 0.3λ, the number of sonic layer groups 4 having a thickness of 1, the electrode 6 having a thickness of 300nm, and the electrode 6 having a duty ratio η of 0.5 were kept unchanged, the thickness of the piezoelectric layer 5 was varied in the range of 100nm to 400nm, and the quality factor Q was measured and calculated for the resonators having the piezoelectric layers 5 of different thicknesses to draw. As shown in fig. 10, as the thickness of the piezoelectric layer 5 increases, the quality factor Q of the resonator increases first and then decreases. When the thickness of the piezoelectric layer 5 is 1.5λ, the quality factor Q is larger, 2187.
Fig. 11 is a schematic diagram showing the change in quality factor of a resonator according to the present invention with the thickness of the first sonic layer. Where the ordinate represents the quality factor Q and the abscissa represents the thickness of the first sound velocity layer 2. Fig. 11 is drawn by: the parameters of 500 μm in thickness of the substrate 1 of the resonator, 0.3λ in thickness of the second acoustic velocity layer 3, 1 in number of acoustic velocity layer groups 4, λ in thickness of the piezoelectric layer 5, 300nm in thickness of the electrode 6, and 0.5 in duty ratio η of the electrode 6 were kept unchanged, the thickness of the first acoustic velocity layer 2 was varied in the range of λ to 10λ, and the quality factor Q was measured and calculated for the resonators having the first acoustic velocity layers 2 of different thicknesses to draw. As shown in fig. 11, as the thickness of the first sonic layer 2 increases, the quality factor Q of the resonator increases and then decreases. When the thickness of the first sonic velocity layer 2 is 7λ, the quality factor Q is larger, 2973.
Fig. 12 is a schematic diagram showing the change of the quality factor of the resonator according to the present invention with the thickness of the second acoustic layer. Wherein the ordinate represents the quality factor Q and the abscissa represents the thickness of the second sound velocity layer 3. Fig. 12 is drawn by: the parameters of the thickness of the substrate 1 of the resonator being 500 μm, the thickness of the first sonic layer 2 being 5λ, the number of sonic groups 4 being 1, the thickness of the piezoelectric layer 5 being λ, the thickness of the electrode 6 being 300nm, and the duty cycle η of the electrode 6 being 0.5 were kept unchanged, the thickness of the second sonic layer 3 being varied in the range of 0.1λ to 2λ, and the quality factor Q being measured and calculated for the resonators having the second sonic layers 3 of different thicknesses to draw. As shown in fig. 12, as the thickness of the second sound velocity layer 3 increases, the quality factor Q of the resonator is distributed in a shape similar to a sine wave. When the thickness of the second sound speed layer 3 is 0.3λ, the quality factor Q is larger, and 720.
Fig. 13 is a schematic diagram showing the change in quality factor of a resonator according to the present invention with the number of sonic groups of layers. Where the ordinate indicates the quality factor Q and the abscissa indicates the number of sound velocity group 4. Fig. 13 is drawn by: the parameters of 500 μm thickness of the substrate 1 of the resonator, 5 λ thickness of the first acoustic velocity layer 2, 0.3λ thickness of the second acoustic velocity layer 3, λ thickness of the piezoelectric layer 5, 300nm thickness of the electrode 6, and 0.5 duty cycle η of the electrode 6 were kept unchanged, the number of acoustic velocity layer groups 4 was varied in the range of 1 to 5, and the quality factor Q was measured and calculated for the resonators having different numbers of acoustic velocity layer groups 4 to draw. As shown in fig. 13, as the number of sonic velocity groups 4 increases, the quality factor Q of the resonator decreases first, then increases, and then decreases. When the number of sound velocity group 4 is 1, the quality factor Q is larger, 720.
Fig. 14 is a schematic diagram showing the admittance of the resonator according to the present invention in the case where the electrode thickness is 280nm, the first acoustic velocity layer thickness is 5λ, the second acoustic velocity layer thickness is 0.3λ, and there are 1 acoustic velocity layer groups. Wherein the ordinate indicates the admittance of the resonator and the abscissa indicates the resonator frequency. Fig. 14 is drawn by: liner for holding resonator The parameters of the thickness of the base 1 of 500 μm, the thickness of the first sound velocity layer 2 of 5 λ, the thickness of the second sound velocity layer 3 of 0.3 λ, the number of sound velocity layer groups 4 of 1, the thickness of the piezoelectric layer 5 of λ, the thickness of the electrode 6 of 280nm, and the duty cycle η of the electrode 6 of 0.5 were unchanged, the resonator frequency was varied, and the admittances were measured and calculated for the different resonator frequencies to draw. When the thickness of the substrate 1 of the resonator of the present embodiment is 500 μm, the thickness of the first acoustic velocity layer 2 is 5λ, the thickness of the second acoustic velocity layer 3 is 0.3λ, the number of acoustic velocity layer groups 4 is 1, the thickness of the piezoelectric layer 5 is λ, the thickness of the electrode 6 is 300nm, and the duty ratio η of the electrode 6 is 0.5, the resonance frequency f of the resonator s = 2.239GHz, antiresonance frequency f p 2.493GHz electromechanical coupling coefficient K 2 29.55%, q=530%, fom=157. At this time, the main mode of the resonator has no spurious.
Fig. 15 is a schematic diagram showing the admittance of the resonator according to the present invention in the case where the electrode thickness is 300nm, the first acoustic velocity layer thickness is 5λ, the second acoustic velocity layer thickness is 0.1λ, and there are 1 acoustic velocity layer groups. Fig. 15 is drawn by: the parameters of 500 μm thickness of the substrate 1 of the resonator, 5 λ thickness of the first acoustic layer 2, 0.1 λ thickness of the second acoustic layer 3, 1 number of acoustic layer groups 4, λ thickness of the piezoelectric layer 5, 300nm thickness of the electrode 6, and 0.5 duty cycle η of the electrode 6 were kept unchanged, the resonator frequency was varied, and admittances were measured and calculated for different resonator frequencies to draw. When the thickness of the substrate 1 of the resonator of the present embodiment is 500 μm, the thickness of the first acoustic velocity layer 2 is 5λ, the thickness of the second acoustic velocity layer 3 is 0.1λ, the number of acoustic velocity layer groups 4 is 1, the thickness of the piezoelectric layer 5 is λ, the thickness of the electrode 6 is 300nm, and the duty ratio η of the electrode 6 is 0.5, the resonance frequency f of the resonator s =2.093 GHz, antiresonance frequency f p 2.315GHz electromechanical coupling coefficient K 2 27.53%, q=618, fom=170. At this time, the main mode of the resonator has no spurious.
FIG. 16 shows the structure of the present invention in which the thickness of the electrode is 300nm, the thickness of the first acoustic velocity layer is lambda, the thickness of the second acoustic velocity layer is 0.3lambda,Schematic of the admittance of a resonator with 1 sonic group of layers. Fig. 16 is drawn by: the parameters of 500 μm thickness of the substrate 1 of the resonator, 0.3λ thickness of the first acoustic layer 2, 1 number of acoustic layer groups 4, λ thickness of the piezoelectric layer 5, 300nm thickness of the electrode 6, and 0.5 duty cycle η of the electrode 6 were kept unchanged, the resonator frequency was varied, and admittances were measured and calculated for different resonator frequencies to draw. When the thickness of the substrate 1 of the resonator of the present embodiment is 500 μm, the thickness of the first acoustic velocity layer 2 is λ, the thickness of the second acoustic velocity layer 3 is 0.3λ, the number of acoustic velocity layer groups 4 is 1, the thickness of the piezoelectric layer 5 is λ, the thickness of the electrode 6 is 300nm, and the duty ratio η of the electrode 6 is 0.5, the resonance frequency f of the resonator s =2.307 GHz, antiresonance frequency f p 2.573GHz electromechanical coupling coefficient K 2 =30.06%, quality factor q=540, fom=162. At this time, the main mode of the resonator has no spurious.
Fig. 17 is a schematic diagram showing the admittance of the resonator according to the present invention in the case where the electrode thickness is 300nm, the first acoustic velocity layer thickness is 5λ, the second acoustic velocity layer thickness is 0.3λ, and there are 2 acoustic velocity layer groups. Fig. 17 is drawn by: the parameters of 500 μm thickness of the substrate 1 of the resonator, 5 λ thickness of the first acoustic layer 2, 0.3 λ thickness of the second acoustic layer 3, 2 number of acoustic layer groups 4, λ thickness of the piezoelectric layer 5, 300nm thickness of the electrode 6, and 0.5 duty cycle η of the electrode 6 were kept unchanged, the resonator frequency was varied, and admittances were measured and calculated for different resonator frequencies to plot. When the thickness of the substrate 1 of the resonator of the present embodiment is 500 μm, the thickness of the first acoustic velocity layer 2 is 5λ, the thickness of the second acoustic velocity layer 3 is 0.3λ, the number of acoustic velocity layer groups 4 is 2, the thickness of the piezoelectric layer 5 is λ, the thickness of the electrode 6 is 300nm, and the duty ratio η of the electrode 6 is 0.5, the resonance frequency f of the resonator s =2.105 GHz, antiresonance frequency f p =2.353 GHz, electromechanical coupling coefficient K 2 =30.75%, quality factor q=571, fom=176. At this time, the main mode of the resonator has no spurious.
Fig. 18 is a schematic diagram showing the admittance of the resonator according to the present invention in the case where the electrode thickness is 300nm, the first acoustic velocity layer thickness is 5λ, the second acoustic velocity layer thickness is 0.3λ, and there are 1 acoustic velocity layer groups. Fig. 18 is drawn by: the parameters of 500 μm thickness of the substrate 1 of the resonator, 5 λ thickness of the first acoustic layer 2, 0.3 λ thickness of the second acoustic layer 3, 1 number of acoustic layer groups 4, λ thickness of the piezoelectric layer 5, 300nm thickness of the electrode 6, and 0.5 duty cycle η of the electrode 6 were kept unchanged, the resonator frequency was varied, and admittances were measured and calculated for different resonator frequencies to draw. When the thickness of the substrate 1 of the resonator of the present embodiment is 500 μm, the thickness of the first acoustic velocity layer 2 is 5λ, the thickness of the second acoustic velocity layer 3 is 0.3λ, the number of acoustic velocity layer groups 4 is 1, the thickness of the piezoelectric layer 5 is λ, the thickness of the electrode 6 is 300nm, and the duty ratio η of the electrode 6 is 0.5, the resonance frequency f of the resonator s = 2.223GHz, antiresonance frequency f p 2.446GHz electromechanical coupling coefficient K 2 =25.97%, q=720, fom=186. At this time, the main mode of the resonator has no spurious.
Fig. 19 is a graph showing changes in electromechanical coupling coefficient and quality factor of a resonator according to the present invention with thicknesses of an electrode, a substrate, and a piezoelectric layer. As can be seen from FIG. 19, when the electrode thickness is 280nm to 300nm, the duty ratio is 0.5, the substrate thickness is 500 μm, the first acoustic velocity layer thickness is 5λ, the second acoustic velocity layer thickness is 0.3λ, the number of acoustic velocity layer groups is 1, and the piezoelectric layer thickness is λ, K is 2 More than or equal to 25%, Q more than or equal to 500, FOM more than or equal to 157, and no stray exists in the main mode; the electromechanical coupling coefficient K is when the electrode thickness is 300nm, the duty ratio is 0.5, the substrate thickness is 500 mu m, the first sound velocity layer thickness is 5lambda, the second sound velocity layer thickness is 0.1lambda-0.3lambda, the number of sound velocity layer groups is 1, the piezoelectric layer thickness is lambda 2 More than or equal to 25%, the quality factor Q more than or equal to 600, the FOM more than or equal to 157, and no stray exists in the main mode; the electromechanical coupling coefficient K when the electrode thickness is 300nm, the duty ratio is 0.5, the substrate thickness is 500 μm, the first sound velocity layer thickness is lambda, the second sound velocity layer thickness is 0.3lambda, the number of sound velocity layer groups is 1, and the piezoelectric layer thickness is lambda 2 =14.32%, q=540, foM=77, the main mode is spurious free; the electromechanical coupling coefficient K when the electrode thickness is 300nm, the duty ratio is 0.5, the substrate thickness is 500 μm, the first sound velocity layer thickness is 5λ, the second sound velocity layer thickness is 0.3λ, the number of sound velocity layer groups is 2, and the piezoelectric layer thickness is λ 2 =30.75%, q=571, fom=214, and no spurious in the main mode.
As can be understood from the above, for the resonator in the present embodiment:
when the electrode thickness, the substrate thickness, and the piezoelectric layer thickness of the resonator are the values of table 1 below, the electromechanical coupling coefficient K 2 25% or more, center frequency f 0 The quality factor Q is more than or equal to 500, the FOM is more than or equal to 157, and the multilayer film resonator with high frequency, large bandwidth, high FOM value, high performance and no stray can be obtained.
TABLE 1
Furthermore, when the second sound velocity layer uses SiO 2 When the material contains oxygen or silicon, such as SiFO or SiON, the temperature coefficient of the frequency of the resonator can be reduced, the frequency drift can be suppressed, and the yield of the product can be improved.
Example 2 ]
Hereinafter, a method for manufacturing a resonator according to the present invention will be described in detail with reference to fig. 20 and 21.
Fig. 20 is a schematic view of a method of manufacturing a resonator according to the present embodiment, and fig. 21 is a flowchart of a method of manufacturing a resonator according to the present embodiment.
The method of manufacturing the resonator of the present embodiment starts in step S2101. In this step S2101, as shown by a in fig. 20, a substrate 11 is provided. The material of the substrate 11 may be diamond, si, or the like, and Si is preferable. The thickness of the substrate 11 may be adjusted according to the product design, and is preferably 300 μm to 600 μm.
Next, in step S2102, as shown in b in fig. 20, the substrate 11 is cleaned and polished (polishing is performed by Chemical Mechanical Polishing (CMP), for example). Then, a first sonic velocity layer 12 is deposited on the surface of the substrate 11 using methods such as plasma enhanced chemical vapor deposition (PECVD: plasma enhanced chemical vapor deposition), physical vapor deposition (PVD: physical vapor deposition:), chemical vapor deposition (CVD: chemical vapor deposition), and metal organic vapor deposition (MOCVD: metal organic chemical vapor deposition). The first sonic velocity layer 12 may be formed of one or more of SiC, siN, diamond, si, and AlN. The thickness of the first sonic layer 12 may be determined according to the wavelength λ of the sound wave excited by the electrode finger, and may be, for example, 1 λ to 10 λ.
Then, in step S2103, as shown by c in fig. 20, a second sound velocity layer 13 is deposited on the surface of the first sound velocity layer 12 by a method such as PECVD, PVD, CVD, MOCVD, and the like. The second sound velocity layer 13 may be made of SiO 2 One or more of SiFO and SiON. The thickness of the second sound-velocity layer 13 may be determined according to the wavelength λ of the sound wave excited by the electrode finger, and may be, for example, 0.1λ to 2λ. Thus, a first sonic group 14 is formed comprising a first sonic layer 12 and a second sonic layer 13.
Alternatively, step S2104 is performed after step S2103. Although only one non-limiting example of forming one first sonic layer group 14 is shown in fig. 20, more than one sonic layer group including a first sonic layer and a second sonic layer may also be formed at step S2104. Specifically, in step S2104, for example, another first sonic layer 122 is formed on the second sonic layer group 14 by a method such as PECVD, PVD, CVD and MOCVD, and then another second sonic layer 132 is formed on the other first sonic layer 122 by a method such as PECVD, PVD, CVD and MOCVD, thereby forming the second sonic layer group 142 including the other first sonic layer 122 and the other second sonic layer 132, and then a further first sonic layer 123 is formed on the second sonic layer group 14 by a method such as PECVD, PVD, CVD and MOCVD, and a further second sonic layer 133 is formed on the further first sonic layer 123, thereby forming a third sonic layer group 143 … … including the further first sonic layer 123 and the further second sonic layer 133, and so on, one sonic layer group is formed by depositing a first sonic layer on the second sonic layer of the previous group and then depositing a second sonic layer on the first sonic layer, and the process is repeated several times, thereby forming n sonic (n Σ1) on the substrate 11. The formed n sonic groups of layers may be collectively referred to as a reflective layer (i.e., the reflective layer includes n sonic groups of layers).
Then, in step S2105, as shown by d in fig. 20, the piezoelectric layer 15 is provided. The material of the piezoelectric layer 15 may be lead-based composite perovskite relaxor ferroelectric single crystal (1-x) Pb (Mg) 1/3 Nb 2/3 )O 3 -xPbTiO 3 (PMNT) material. In the present embodiment, as the piezoelectric layer material of the resonator, for the PMNT material, a piezoelectric material of the formula (1-x) Pb (Mg 1/3 Nb 2/3 )O 3 -xPbTiO 3 In (2) x is preferably in the range of 0.30 to 0.35, and the polarization direction of the PMNT single crystal material is preferably [001 ]]Direction. As an example, the piezoelectric layer 15 may be manufactured by various processes such as thinning a piezoelectric wafer. The thickness of the piezoelectric layer 15 may be determined according to the wavelength λ of the acoustic wave excited by the electrode finger, and may be, for example, 0.5λ to 2λ.
Next, in step S2106, as shown by e in fig. 20, the electrode 16 is deposited on the surface of the piezoelectric layer 15 by a method such as vapor deposition or sputtering. The electrode 16 may be formed on the upper surface of the piezoelectric layer 15, may be formed on the lower surface of the piezoelectric layer 15, or may be formed on both the upper and lower surfaces of the piezoelectric layer 15. The duty cycle η of the electrode 16 (duty cycle η=electrode width/(electrode width+electrode pitch)) may be 0.5. The number of electrodes 16 may be adjusted according to the product design, for example, the number of pairs of electrodes 16 is preferably 1000 pairs. The electrode 16 may be made of a metal or an alloy such as Ti, al, cr, cu, au, pt, ag, pd, ni, or a laminate of these metals or alloys. The thickness of the electrode 16 may be adjusted according to the design of the product, and may be, for example, 100nm to 400nm. The structure of the electrode 16 may be a single-layer structure or a multi-layer structure. The structure of the electrode 16 is preferably a multilayer structure. The electrode 16 is further preferably formed by laminating two metal layers of a first layer formed of Ni, ti or Cr and a second layer formed of Pt, al or al—cu.
Then, in step S2107, the upper surface of the reflection layer (i.e., the upper surface of the second sound velocity layer of the topmost sound velocity layer group of the formed one or more sound velocity layer groups) is bonded to the lower surface of the piezoelectric layer 15, as indicated by f in fig. 20. For example, the upper surface of the reflective layer and the lower surface of the piezoelectric layer 15 may be bonded by low-temperature bonding. As one example, the low-temperature bonding may be bonding using a bonding material such as epoxy, metal, or the like as a bonding layer after polishing (such as Chemical Mechanical Polishing (CMP)) the bonding surface of the substrate 11 and the piezoelectric layer 15. In the case of low-temperature bonding, for example, the bonding temperature is 300 ℃ or lower.
Then, in step S2108, after the low-temperature bonding is completed, the structure of the formed resonator is cooled. The cooling rate is, for example, 15 ℃ per second or less, as shown by g in FIG. 20.
To this end, the final structure of the resonator is formed and the method ends.
In certain embodiments, the operations included in the methods of the embodiments described above may occur simultaneously, substantially simultaneously, or in a different order than shown in the figures.
In some embodiments, all or part of the operations included in the methods in the embodiments described above may optionally be performed automatically by a program. In one example, the invention may be implemented as a program product stored on a computer readable storage medium for use with a computer system. The program(s) of the program product include the functions of the embodiments (including the methods described herein). Illustrative computer-readable storage media include, but are not limited to: (i) A non-writable storage medium (e.g., a read-only memory device within a computer such as a CD-ROM disk readable by a CD-ROM machine, flash memory, ROM chip or any type of solid state non-volatile semiconductor memory) on which information is permanently stored; and (ii) a writable storage medium (e.g., a disk storage or hard disk drive or any type of solid state random access semiconductor memory) on which alterable information is stored. Such computer-readable storage media, when carrying computer-readable instructions that direct the functions of the methods described herein, are embodiments of the present invention.
The foregoing describes in detail alternative embodiments of the present invention. It will be appreciated that various embodiments and modifications may be resorted to without departing from the broad spirit and scope of the invention. Many modifications and variations will be apparent to those of ordinary skill in the art in light of the concepts of the invention without undue burden. Therefore, all technical solutions which can be obtained by logic analysis, reasoning or limited experiments based on the prior art by a person skilled in the art according to the inventive concept shall fall within the scope of protection defined by the claims of the present invention.
Claims (8)
1. A surface acoustic wave resonator, comprising:
a substrate;
a reflective layer formed on the substrate and including one or more sonic group of layers stacked on top of each other, the sonic group of layers including:
a first sonic layer; and
a second sonic layer formed on the first sonic layer and having a sonic velocity less than a sonic velocity of the first sonic layer; and
a piezoelectric layer formed of a PMNT material and formed on the reflective layer, wherein the PMNT material is a material having a chemical formula of (1-x) Pb (Mg 1/3 Nb 2/3 )O 3 -xPbTiO 3 And wherein x is a value in the range of 0.33 to 0.35,
wherein the piezoelectric layer has a sound velocity that is less than the sound velocity of the first sound velocity layer and greater than the sound velocity of the second sound velocity layer.
2. The surface acoustic wave resonator of claim 1, further comprising an electrode formed on an upper surface of the piezoelectric layer or a lower surface of the piezoelectric layer.
3. The surface acoustic wave resonator of claim 1, wherein the first acoustic velocity layer is formed of one or more of SiC, siN, diamond, si, and AlN.
4. The surface acoustic wave resonator according to claim 1, wherein the second sound velocity layer is made of SiO 2 One or more of SiFO and SiON.
5. The surface acoustic wave resonator of claim 2, wherein the electrode is formed of one or more of Ti, al, cr, cu, au, pt, ag, pd and Ni.
6. A method of manufacturing a surface acoustic wave resonator, comprising:
depositing a first sonic layer on an upper surface of a substrate;
depositing a second sonic layer on the upper surface of the first sonic layer, the second sonic layer having a sonic velocity less than the sonic velocity of the first sonic layer;
Depositing an electrode on an upper or lower surface of a piezoelectric layer formed of a PMNT material having a sound velocity less than that of a first sound velocity layer and greater than that of a second sound velocity layer, wherein the PMNT material is of the formula (1-x) Pb (Mg 1/3 Nb 2/3 )O 3 -xPbTiO 3 And wherein x is a value in the range of 0.33 to 0.35;
bonding the lower surface of the piezoelectric layer and the upper surface of the second sound speed layer at a bonding temperature; and
after bonding is completed, cooling is performed.
7. A method of manufacturing a surface acoustic wave resonator, comprising:
depositing a reflective layer on an upper surface of the substrate, the reflective layer formed by depositing one or more sonic groups of layers, the sonic groups of layers comprising:
a first sonic layer; and
a second sound velocity layer formed on the first sound velocity layer by deposition and having a sound velocity smaller than that of the first sound velocity layer;
depositing an electrode on an upper or lower surface of a piezoelectric layer formed of a PMNT material having a sound velocity less than that of a first sound velocity layer and greater than that of a second sound velocity layer, wherein the PMNT material is of the formula (1-x) Pb (Mg 1/3 Nb 2/3 )O 3 -xPbTiO 3 And wherein x is a value in the range of 0.33 to 0.35;
bonding the lower surface of the piezoelectric layer and the upper surface of the reflecting layer at a bonding temperature; and
after bonding is completed, cooling is performed.
8. The method of manufacturing according to claim 6 or 7, wherein the bonding temperature is 300 ℃ or less, and a cooling rate at which cooling is performed after bonding is completed is 15 ℃/s or less.
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| CN202110394295.5A Active CN112953445B (en) | 2021-04-13 | 2021-04-13 | Resonator and method for manufacturing resonator |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002141768A (en) * | 2000-11-02 | 2002-05-17 | Alps Electric Co Ltd | Surface acoustic wave element |
| CN1647923A (en) * | 2004-01-26 | 2005-08-03 | 精工爱普生株式会社 | Piezoelectric element, piezoelectric actuator, ink jet recording head, ink jet printer |
| JP2009201101A (en) * | 2008-01-21 | 2009-09-03 | Panasonic Electric Works Co Ltd | Baw resonator and manufacturing method thereof |
| CN106209007A (en) * | 2010-12-24 | 2016-12-07 | 株式会社村田制作所 | Acoustic wave device and manufacture method thereof |
| CN107342748A (en) * | 2017-07-04 | 2017-11-10 | 浙江大学 | A kind of bulk acoustic wave resonator of based single crystal piezoelectric membrane and preparation method thereof |
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2021
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002141768A (en) * | 2000-11-02 | 2002-05-17 | Alps Electric Co Ltd | Surface acoustic wave element |
| CN1647923A (en) * | 2004-01-26 | 2005-08-03 | 精工爱普生株式会社 | Piezoelectric element, piezoelectric actuator, ink jet recording head, ink jet printer |
| JP2009201101A (en) * | 2008-01-21 | 2009-09-03 | Panasonic Electric Works Co Ltd | Baw resonator and manufacturing method thereof |
| CN106209007A (en) * | 2010-12-24 | 2016-12-07 | 株式会社村田制作所 | Acoustic wave device and manufacture method thereof |
| CN107342748A (en) * | 2017-07-04 | 2017-11-10 | 浙江大学 | A kind of bulk acoustic wave resonator of based single crystal piezoelectric membrane and preparation method thereof |
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