CN112953291B - Bipolar high-voltage pulse power supply for generating uniform low-temperature plasma - Google Patents
Bipolar high-voltage pulse power supply for generating uniform low-temperature plasma Download PDFInfo
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- CN112953291B CN112953291B CN202110274210.XA CN202110274210A CN112953291B CN 112953291 B CN112953291 B CN 112953291B CN 202110274210 A CN202110274210 A CN 202110274210A CN 112953291 B CN112953291 B CN 112953291B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/53—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback
- H03K3/57—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback the switching device being a semiconductor device
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The invention discloses a bipolar high-voltage pulse power supply for generating uniform low-temperature plasma, which relates to the field of low-temperature plasma and comprises the following components: rectifier filter module, two resonance charging modules, two primary winding pulse transformer and control module, every resonance charging module all includes resonance inductance, resonance diode, resonance capacitor and semiconductor switch, resonance inductance's one end is as resonance charging module's input positive terminal, semiconductor switch's second end is as resonance charging module's input negative terminal and output negative terminal, resonance capacitor's the other end is as resonance charging module's output positive terminal, the one end of secondary coil and first end of first primary coil and the first end of second primary coil are the homonymy end respectively, control module switches on through controlling two semiconductor switch's turn-on in turn, obtain bipolar high-voltage pulse at secondary coil, semiconductor switch's quantity has been reduced, the even low temperature plasma of more stable production.
Description
Technical Field
The invention relates to the field of low-temperature plasmas, in particular to a bipolar high-voltage pulse power supply for generating uniform low-temperature plasmas.
Background
The low-temperature plasma is a substance fourth state following solid, liquid and gas states, the electron temperature in the low-temperature plasma is far higher than the temperature of ions and neutral particles, electrons can sufficiently excite, dissociate and ionize reactant molecules, and the whole reaction system is kept at normal temperature, so that the low-temperature plasma has wide application prospects in the fields of material surface modification, waste gas treatment, fluid control, biomedicine and the like.
In the prior art, the low-temperature plasma is driven by low-frequency or medium-frequency sinusoidal high voltage, although the sinusoidal driving has some advantages, the pulse-driven low-temperature plasma has more advantages in the aspects of energy efficiency, discharge uniformity and the like, and in addition, compared with unipolar positive pulse or negative polarity driving, bipolar pulse-driven low-temperature plasma can generate more uniform low-temperature plasma with higher discharge intensity.
The bipolar high-voltage pulse can be generated by a plurality of technologies, the most direct method is to connect a direct-current high-voltage power supply to a load through high-voltage switches, a main circuit adopts a half-bridge or full-bridge structure, each high-voltage switch is formed by connecting and superposing an insulated gate transistor IGBT or a metal oxide semiconductor field effect transistor MOSFET in series, the scheme has higher requirement on the synchronism of the switches, and a complex voltage-sharing circuit is also needed, so that if individual switches are conducted in a delayed mode, the individual switches can be broken down by overvoltage and are in a short-circuit state.
The other scheme is that all-solid-state Marx is adopted, the most basic idea is that energy storage capacitors are charged in parallel and then are connected in series to discharge, and therefore high-voltage pulses are output.
Disclosure of Invention
The present inventors have proposed a bipolar high voltage pulse power supply for generating uniform low temperature plasma in view of the above problems and technical requirements, and the technical solution of the present invention is as follows:
a bipolar high-voltage pulse power supply for generating uniform low-temperature plasma comprises a rectification filter module, two resonance charging modules with the same circuit structure, a double-primary winding pulse transformer and a control module, wherein the rectification filter module rectifies and filters external power and provides the rectified and filtered external power to the two resonance charging modules, the double-primary winding pulse transformer comprises two primary coils and a secondary coil, the secondary coil is used for being connected to an external low-temperature plasma reactor, each resonance charging module comprises a resonance inductor, a resonance diode, a resonance capacitor and a semiconductor switch, one end of the resonance inductor is connected to the output positive end of the rectification filter module and serves as the input positive end of the resonance charging module, the other end of the resonance inductor is connected to the positive electrode of the resonance diode, and the negative electrode of the resonance diode is connected to one end of the resonance capacitor and the first end of the semiconductor switch, the second end of the semiconductor switch is used as the input negative end and the output negative end of the resonance charging module, the other end of the resonance capacitor is used as the output positive end of the resonance charging module, the first end of the first primary coil is connected to the output positive end of the resonance charging module, the first end of the second primary coil is connected to the other output negative end of the resonance charging module, one end of the secondary coil is connected with the first end of the first primary coil and the first end of the second primary coil respectively, the two semiconductor switches are controlled by the control module to be alternately switched on, and the secondary coil obtains bipolar high-voltage pulses.
According to a further technical scheme, each resonant charging module further comprises a follow current circuit, each follow current circuit comprises a follow current diode and a follow current resistor, the anode of each follow current diode is connected to the common end of one resonant capacitor and the corresponding primary coil, and the cathode of each follow current diode is connected to the output cathode end of the rectifying and filtering module and the common end of the corresponding primary coil through the follow current resistor.
The further technical scheme is that the obtaining of the bipolar high-voltage pulse at the secondary coil comprises:
when one semiconductor switch is conducted, a high-voltage pulse with a preset polarity is generated on the secondary coil through the corresponding resonance charging module, and when the other semiconductor switch is conducted, the other resonance charging module generates a high-voltage pulse with the opposite polarity to the preset polarity on the secondary coil.
The further technical scheme is that a current signal of the resonant inductor is started by zero current, and then the semiconductor switch is conducted by the zero current.
According to a further technical scheme, each semiconductor switch comprises a switch transistor and a switch diode, a negative electrode of each switch diode and a common end of a first end of the corresponding switch transistor are connected to a negative electrode of the corresponding resonant diode, a positive electrode of each switch diode and a common end of a second end of the corresponding switch transistor are connected to an output negative electrode end of the rectifying and filtering module and a common end of the corresponding primary coil, and a control end of each switch transistor is connected to the control module.
The semiconductor switch control circuit comprises a control module, a semiconductor switch and a control module, wherein the control module is used for controlling the switching transistor to be switched off under the zero-current and zero-voltage states, the current signal of the semiconductor switch is a sinusoidal curve which changes along with time, the sinusoidal curve comprises a positive current interval and a negative current interval, and when the corresponding current signal of the semiconductor switch is in the negative current interval, the corresponding switching diode is switched on.
The further technical scheme is that the switch transistor comprises any one of an insulated gate bipolar transistor, a thyristor, a gate turn-off thyristor, an electric field effect transistor and an integrated gate turn-off thyristor.
The beneficial technical effects of the invention are as follows: the dotted terminals of the two primary coils are opposite, the control module controls the alternate conduction of the two semiconductor switches to obtain bipolar high-voltage pulses at the secondary coil, so that the number of the semiconductor switches is reduced, and uniform low-temperature plasma is generated more stably; the follow current circuit prevents the breakdown and damage of the semiconductor switch caused by high voltage, and meanwhile, the follow current resistor on the follow current circuit can avoid oscillation; the zero current conduction of the semiconductor switch is realized, and the zero current and zero voltage disconnection of the semiconductor switch are realized simultaneously, so that the loss of the semiconductor switch is reduced, the electromagnetic interference is reduced, and the high-frequency repeated use is realized.
Drawings
Fig. 1 is a block diagram of a high-voltage pulse power supply according to the present application.
Fig. 2 is a circuit schematic diagram of the high-voltage pulse power supply of the present application.
Detailed Description
The following further describes the embodiments of the present invention with reference to the drawings.
A bipolar high-voltage pulse power supply for generating uniform low-temperature plasma comprises a rectification filter module, two resonance charging modules with the same circuit structure, a double-primary winding pulse transformer and a control module, wherein the rectification filter module rectifies and filters commercial power of an external power supply and converts the commercial power into direct-current voltage to be supplied to the two resonance charging modules, the rectification filter module adopts a commercially available rectification unit and a filter unit, for example, as shown in FIG. 2, the rectification unit comprises four rectifier diodes, a rectification bridge is formed by the four rectifier diodes to rectify alternating current, the filter unit comprises a filter capacitor C1, and the filter capacitor C1 is connected between an output positive electrode and an output negative electrode of the rectification unit. The double-primary-side winding pulse transformer comprises a first primary coil Lp1, a second primary coil Lp2 and a secondary coil Ls, wherein the first end of the secondary coil Ls, the first end of the first primary coil Lp1 and the first end of the second primary coil Lp2 are the same-name ends, so that voltages with opposite polarities can be obtained on the secondary coil through the two primary coils, and the secondary coil Ls is used for being connected to an external low-temperature plasma reactor DBD.
Each resonant charging module comprises a resonant inductor, a resonant diode, a resonant capacitor and a semiconductor switch, and the first resonant charging module is taken as an example below: one end of the first resonant inductor Lr1 is connected to the output positive terminal of the rectifying and smoothing module and serves as the input positive terminal of the first resonant charging module, the other end of the first resonant inductor Lr1 is connected to the positive terminal of the first resonant diode Dr1, the negative terminal of the first resonant diode Dr1 is connected to one end of the first resonant capacitor Cs1 and the first terminal of the semiconductor switch, the second terminal of the semiconductor switch serves as the input negative terminal and the output negative terminal of the first resonant charging module, and the other end of the first resonant capacitor Cs1 serves as the output positive terminal of the first resonant charging module.
The first end of the first primary coil Lp1 is connected to the output positive end of the first resonance charging module, the first end of the second primary coil Lp2 is connected to the output negative end of the second resonance charging module, the first end of the secondary coil Ls, the first end of the first primary coil and the first end of the second primary coil are homonymous ends, the control module comprises a control chip, and the control module controls the on-off of the two semiconductor switches so as to obtain bipolar high-voltage pulses on the secondary coil of the double-primary-side winding pulse transformer.
Further, each resonant charging module further comprises a free-wheeling circuit, the two free-wheeling circuits have the same circuit structure, each free-wheeling circuit comprises a free-wheeling diode and a free-wheeling resistor, taking the first free-wheeling circuit in the first resonant charging module as an example, the anode of the first free-wheeling diode Df1 is connected to the common end of the first resonant capacitor Cs1 and the first primary coil Lp1, the cathode of the first free-wheeling diode Df1 is connected to the common end of the first primary coil Lp1 and the output cathode end of the rectifying and filtering module through the first free-wheeling resistor Rf1, when the corresponding semiconductor switch is disconnected, the free-wheeling circuit prevents the semiconductor switch from breakdown and damage due to high voltage, and meanwhile, the free-wheeling resistors on the free-wheeling circuits can avoid oscillation.
The semiconductor switch comprises a switch transistor and a switch diode, the first semiconductor switch comprises a first switch transistor Q1 and a first switch diode DQ1, the second semiconductor switch comprises a second switch transistor Q2 and a second switch diode DQ2, the circuit structures of the two semiconductor switches are the same, taking the first semiconductor switch as an example, the common terminal of the cathode of the first switching diode DQ1 and the first terminal of the first switching transistor Q1 is connected to the cathode of the first resonant diode, namely, a first terminal of the first semiconductor switch is connected to a cathode of the first resonant diode, a common terminal of an anode of the first switching diode DQ1 and a second terminal of the first switching transistor Q1 is connected to a common terminal of an output cathode terminal of the rectifying and smoothing module and the first primary coil Lp1, namely, the second end of the first semiconductor switch is connected to the output negative end of the rectifying and filtering module and the common end of the first primary coil Lp 1.
The control modules are connected to the control terminals of the two switching transistors, respectively, i.e. the control modules are connected to the control terminals of the first switching transistor Q1 and the second switching transistor Q2, respectively.
The switching transistors include any one of an insulated gate bipolar transistor IGBT, a thyristor SCR, a gate turn-off thyristor GTO, a power field effect transistor MOSFET, and an integrated gate turn-off thyristor IGCT, each of which includes a first end, a second end, and a control end, and taking the IGBT as an example, the first end is a collector, the second end is an emitter, and the control end is a gate.
The working principle of the bipolar repetition frequency high-voltage pulse generating device is as follows:
when the first switching transistor Q1 or the second switching transistor Q2 is turned off, the dc voltage of the rectifying-smoothing module charges the first resonant capacitor Cs1 through the first resonant inductor Lr1, the first resonant diode Dr1 and the first primary winding Lp1, and similarly, the dc voltage charges the second resonant capacitor Cs2 through the second resonant inductor Lr2, the second resonant diode Dr2 and the second primary winding Lp 2.
When the first switching transistor Q1 is turned on, the second switching transistor Q2 is turned off, the first resonant capacitor Cs1 discharges to the first primary coil Lp1 through the first switching transistor Q1, a first pulse voltage is generated at two ends of the first primary coil Lp1, and the first pulse voltage is boosted through the double primary winding pulse transformer, then a high-voltage pulse with a preset polarity is obtained at the secondary coil and is applied to the low-temperature plasma reactor DBD; when the second switching transistor Q2 is turned on and the first switching transistor Q1 is turned off, a high voltage pulse having a polarity opposite to a predetermined polarity is obtained at the secondary winding, for example, the predetermined polarity is positive, the first resonant charging module generates a high voltage pulse having a positive polarity, and the second resonant charging module generates a high voltage pulse having a negative polarity.
Due to the existence of leakage inductance of the double-primary winding pulse transformer, a current signal flowing through the first switching transistor Q1 and the first switching diode DQ1 is a sinusoidal curve which changes along with time, the sinusoidal curve comprises a positive current interval and a negative current interval, when a current in the negative current interval flows through the first switching diode DQ1, the first switching diode DQ1 is switched on, no current flows through the first switching transistor Q1, if the first switching transistor Q1 is switched off in the interval, zero-current and zero-voltage switching-off of the first semiconductor switch can be realized, and the same is also true for the principle of the second semiconductor switch.
Meanwhile, due to the current limiting characteristic of the inductor, the current of the first resonant inductor Lr1 rises slowly from zero, so that when the first switching transistor Q1 is turned on, the current starts to increase from 0, and therefore the first switching transistor Q1 is turned on for zero current, so that the first switching transistor Q1 realizes soft switching, which is beneficial to reducing switching loss and electromagnetic interference.
During the on-period of the first switching transistor Q1, the current flowing through the first resonant inductor Lr1 increases linearly, and when the first switching transistor Q1 is turned off, the current flowing through the first resonant inductor Lr1 decreases, so that the voltage across the first resonant inductor Lr1 is opposite to the current direction, and the voltage is superimposed on the across the filter capacitor C1 to charge the first resonant capacitor Cs1, so that the voltage across the first resonant capacitor Cs1 is greater than the voltage across the filter capacitor C1, and can be at most twice as large as the voltage across the filter capacitor C1.
The bipolar high-voltage pulse can be obtained by controlling the sequential conduction of the first semiconductor switch and the second semiconductor switch, and the frequency of the bipolar high-voltage pulse can be controlled by controlling the conduction frequency of the first semiconductor switch and the second semiconductor switch.
It should be noted that when the first semiconductor switch is turned on and a pulse voltage is applied across the first primary winding Lp1, a pulse voltage is induced in the second primary winding Lp2, which is superimposed on the voltage across the second resonant capacitor Cs2 and acts together on the second semiconductor switch, so that the voltage across the second semiconductor switch is about twice the voltage across the second resonant capacitor Cs 2. Similarly, when the second semiconductor switch is turned on, the voltage across the first semiconductor switch is about twice the voltage across the first resonant capacitor Cs1, so that care needs to be taken when selecting the semiconductor switches as to whether the rated voltages of the two semiconductor switches are sufficient for normal operation.
What has been described above is only a preferred embodiment of the present application, and the present invention is not limited to the above embodiment. It is to be understood that other modifications and variations directly derivable or suggested by those skilled in the art without departing from the spirit and concept of the present invention are to be considered as included within the scope of the present invention.
Claims (5)
1. A bipolar high-voltage pulse power supply for generating uniform low-temperature plasma is characterized by comprising a rectification filter module, two resonance charging modules with the same circuit structure, a double-primary winding pulse transformer and a control module, wherein the rectification filter module rectifies and filters external power and supplies the rectified and filtered power to the two resonance charging modules, the double-primary winding pulse transformer comprises two primary coils and a secondary coil, the secondary coil is used for being connected to an external low-temperature plasma reactor, each resonance charging module comprises a resonance inductor, a resonance diode, a resonance capacitor and a semiconductor switch, one end of the resonance inductor is connected to an output positive end of the rectification filter module and serves as an input positive end of the resonance charging module, and the other end of the resonance inductor is connected to the positive electrode of the resonance diode, the cathode of the resonant diode is connected to one end of the resonant capacitor and the first end of the semiconductor switch, the second end of the semiconductor switch is used as the input cathode end and the output cathode end of the resonant charging module, the other end of the resonant capacitor is used as the output anode end of the resonant charging module, the first end of the first primary coil is connected to the output anode end of one resonant charging module, the second end of the first primary coil is connected to the output cathode end of the resonant charging module, the first end of the second primary coil is connected to the output anode end of the other resonant charging module, and the second end of the second primary coil is connected to the output anode end of the other resonant charging module; one end of the secondary coil, the first end of the first primary coil and the first end of the second primary coil are homonymous ends respectively, the control module controls the alternate conduction of the two semiconductor switches to obtain a bipolar high-voltage pulse on the secondary coil, a current signal of the resonant inductor is started by zero current, and the semiconductor switches are conducted by the zero current;
each resonant charging module further comprises a freewheeling circuit, each freewheeling circuit comprises a freewheeling diode and a freewheeling resistor, the anode of each freewheeling diode is connected to the other end of one resonant capacitor, and the cathode of each freewheeling diode is connected to the output cathode end of the rectifying and filtering module through the freewheeling resistor.
2. The bipolar high voltage pulse power supply according to claim 1, wherein said obtaining bipolar high voltage pulses at said secondary coil comprises:
when one semiconductor switch is conducted, a high-voltage pulse with a preset polarity is generated on the secondary coil through the corresponding resonance charging module, and when the other semiconductor switch is conducted, the other resonance charging module generates a high-voltage pulse with the opposite polarity to the preset polarity on the secondary coil.
3. The bipolar high voltage pulse power supply according to any one of claims 1-2, wherein each of said semiconductor switches comprises a switch transistor and a switch diode, a cathode of each of said switch diodes and a common terminal of a first terminal of a corresponding one of said switch transistors are connected to a cathode of a corresponding one of said resonant diodes, an anode of each of said switch diodes and a common terminal of a second terminal of a corresponding one of said switch transistors are connected to an output cathode terminal of said rectifying and filtering module, and a control terminal of each of said switch transistors is connected to said control module.
4. The bipolar high voltage pulse power supply according to claim 3, wherein the current signal of the semiconductor switch is a sinusoidal curve varying with time, the sinusoidal curve includes a positive current interval and a negative current interval, when the current signal of the corresponding semiconductor switch is in the negative current interval, the corresponding switch diode is turned on, and the control module controls the corresponding switch transistor to be turned off in a zero-current and zero-voltage state.
5. The bipolar high voltage pulse power supply according to claim 3, wherein said switching transistor comprises any one of an insulated gate bipolar transistor, a gate turn-off thyristor, a power field effect transistor, and an integrated gate turn-off thyristor.
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| CN113422536B (en) * | 2021-06-24 | 2024-04-19 | 平顶山学院 | Negative polarity voltage type pulse driving circuit topology, system and equipment |
| CN114900157B (en) * | 2022-07-12 | 2022-09-20 | 深圳迈微医疗科技有限公司 | Pulse generating circuit, pulse generator and medical equipment |
| CN116388602A (en) * | 2023-03-31 | 2023-07-04 | 成都川新甲科技有限公司 | High-voltage pulse power supply modulator based on matrix type pulse transformer |
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