CN112952012A - Display panel and display device - Google Patents

Display panel and display device Download PDF

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CN112952012A
CN112952012A CN202110166356.2A CN202110166356A CN112952012A CN 112952012 A CN112952012 A CN 112952012A CN 202110166356 A CN202110166356 A CN 202110166356A CN 112952012 A CN112952012 A CN 112952012A
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light
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layer
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CN112952012B (en
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吴勇
高荣荣
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BOE Technology Group Co Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/12OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/615Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/622Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing four rings, e.g. pyrene
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/657Polycyclic condensed heteroaromatic hydrocarbons
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/657Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00Properties of the organic materials covered by group H10K85/00
    • H10K2101/40Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract

The invention provides a display panel and a display device, aiming at solving the problem of low luminous efficiency of the display panel in the prior art. The display panel includes: the LED display device comprises a substrate base plate, a first electrode positioned on one side of the substrate base plate, a light-emitting layer positioned on one side of the first electrode, which is far away from the substrate base plate, and a second electrode positioned on one side of the light-emitting layer, which is far away from the first electrode; the light-emitting layer includes a first light-emitting portion having a light-emitting wavelength range larger than a light-emitting wavelength range of a second light-emitting portion having a light-emitting wavelength range larger than a light-emitting wavelength range of a third light-emitting portion, and a third light-emitting portion including a main body portion and a passenger body portion; the main body part is made of a thermally activated delayed fluorescence material, and the difference between the singlet excited level and the triplet excited level of the main body part is not more than 0.3 eV; the body portion contains an electron donating group, and an electron accepting group.

Description

Display panel and display device
Technical Field
The invention relates to the technical field of semiconductors, in particular to a display panel and a display device.
Background
In general, a fluorescent light-emitting material generates singlet excitons and triplet excitons at a ratio of 25: 75 when excited by an electric current, wherein the singlet excitons are inactivated to the ground state singlet state by radiation and emit fluorescence, but the energy (T1) for generating triplet excitons having a high ratio cannot be effectively used for light emission. But the maximum theoretical limit for Internal Quantum Efficiency (IQE) is 25%, resulting in less than ideal OLED performance. The OLED based on the phosphorescent material illuminant can fully collect singlet excitons and triplet excitons, so that the IQE can reach 100%. However, the phosphorescent material molecule requires a rare metal element, so that the cost of the OLED of the phosphorescent material increases and the pollution is serious, that is, the related art display panel still has a problem of low luminous efficiency.
Disclosure of Invention
The invention provides a display panel and a display device, aiming at solving the problem of low luminous efficiency of the display panel in the prior art.
An embodiment of the present invention provides a display panel, including: the LED display device comprises a substrate base plate, a first electrode positioned on one side of the substrate base plate, a light-emitting layer positioned on one side of the first electrode, which is far away from the substrate base plate, and a second electrode positioned on one side of the light-emitting layer, which is far away from the first electrode; wherein,
the light-emitting layer includes a first light-emitting portion having a light-emitting wavelength range larger than a light-emitting wavelength range of a second light-emitting portion having a light-emitting wavelength range larger than a light-emitting wavelength range of a third light-emitting portion, and a third light-emitting portion including a main body portion and a passenger body portion; the main body part is made of a thermally activated delayed fluorescence material, and the difference between the singlet excited level and the triplet excited level of the main body part is not more than 0.3 eV; the body portion contains an electron donating group and an electron accepting group, the electron donating group comprising the following structural formula:
Figure BDA0002933419220000021
the electron accepting group includes the following structural formula:
Figure BDA0002933419220000022
wherein A1 is selected from one of B, N, S, O, C, Se, Si and F; selection of A2One selected from B, N, S, O, C, Se, Si and F; a3 is selected from one of B, N, S, O, C, Se, Si and F; and at least one of A2 and A3 is B.
In one possible embodiment, the electron donating group comprises the following structural formula:
Figure BDA0002933419220000023
the electron accepting group includes the following structural formula:
Figure BDA0002933419220000031
wherein R1 is a single bond, carbazole, diphenylamino, phenoxazine, phenothiazine, dibenzoazasiline, pyrrolidine, piperidine, phenoxide, methoxide, C1-C8 aliphatic hydrocarbon group, C6-C30 aromatic hydrocarbon group, C3-C18 aromatic heterocyclic group, substituted C6-C36 aryl group or unsubstituted C6-C36 aryl group; r2 is a single bond, carbazole, diphenylamino, phenoxazine, phenothiazine, dibenzoazasilaline, pyrrolidine, piperidine, phenoxide, methoxide, aliphatic hydrocarbon group of C1-C8, aromatic hydrocarbon group of C6-C30, aromatic heterocyclic group of C3-C18, substituted C6-C36 aryl or unsubstituted C6-C36 aryl; r3 is a single bond, carbazole, diphenylamino, phenoxazine, phenothiazine, dibenzoazasilaline, pyrrolidine, piperidine, phenoxide, methoxide, aliphatic hydrocarbon group of C1-C8, aromatic hydrocarbon group of C6-C30, aromatic heterocyclic group of C3-C18, substituted C6-C36 aryl or unsubstituted C6-C36 aryl; r4 is a single bond, carbazole, diphenylamino, phenoxazine, phenothiazine, dibenzoazasilaline, pyrrolidine, piperidine, phenoxide, methoxide, aliphatic hydrocarbon group of C1-C8, aromatic hydrocarbon group of C6-C30, aromatic heterocyclic group of C3-C18, substituted C6-C36 aryl or unsubstituted C6-C36 aryl;
r5 is a connecting structure of the electron donating group and the electron accepting group, and comprises one of the following groups or 2-3 groups formed by connecting the following groups:
a single bond;
benzene;
dibenzofuran;
dibenzothiophene;
carborane;
r6 is one or a combination of:
a cyano group;
pyrazole;
imidazole;
a triazole;
pyridine;
a pyrimidine;
a triazine;
aza-carbazole;
aza-dibenzofuran;
an aza-dibenzothiophene group;
linear alkyl of C1-C18;
C1-C18 branched substituted alkylene;
C2-C8 alkenylene;
alkynylene of C2-C8;
a single bond;
r7 is one or a combination of:
a cyano group;
pyrazole;
imidazole;
a triazole;
pyridine;
a pyrimidine;
a triazine;
aza-carbazole;
aza-dibenzofuran;
an aza-dibenzothiophene group;
linear alkyl of C1-C18;
C1-C18 branched substituted alkylene;
C2-C8 alkenylene;
alkynylene of C2-C8;
a single bond;
r8 is one or a combination of:
a cyano group;
pyrazole;
imidazole;
a triazole;
pyridine;
a pyrimidine;
a triazine;
aza-carbazole;
aza-dibenzofuran;
an aza-dibenzothiophene group;
linear alkyl of C1-C18;
C1-C18 branched substituted alkylene;
C2-C8 alkenylene;
alkynylene of C2-C8;
a single bond;
r10 is one or a combination of:
substituted or unsubstituted C2-C40-alkenyl;
substituted or unsubstituted C2-C40-alkynyl;
substituted or unsubstituted C6-C60-aryl;
substituted or unsubstituted C3-C57-heteroaryl;
substituted or unsubstituted C1-C9-alkylene;
substituted or unsubstituted C2-C8-alkenylene;
substituted or unsubstituted C2-C8-alkynylene;
an arylene group;
a single bond;
r11 is one or a combination of:
substituted or unsubstituted C2-C40-alkenyl;
substituted or unsubstituted C2-C40-alkynyl;
substituted or unsubstituted C6-C60-aryl;
substituted or unsubstituted C3-C57-heteroaryl;
substituted or unsubstituted C1-C9-alkylene;
substituted or unsubstituted C2-C8-alkenylene;
substituted or unsubstituted C2-C8-alkynylene;
an arylene group;
a single bond;
r12 is one or a combination of:
substituted or unsubstituted C2-C40-alkenyl;
substituted or unsubstituted C2-C40-alkynyl;
substituted or unsubstituted C6-C60-aryl;
substituted or unsubstituted C3-C57-heteroaryl;
substituted or unsubstituted C1-C9-alkylene;
substituted or unsubstituted C2-C8-alkenylene;
substituted or unsubstituted C2-C8-alkynylene;
an arylene group;
a single bond;
r13 is one or a combination of:
substituted or unsubstituted C2-C40-alkenyl;
substituted or unsubstituted C2-C40-alkynyl;
substituted or unsubstituted C6-C60-aryl;
substituted or unsubstituted C3-C57-heteroaryl;
substituted or unsubstituted C1-C9-alkylene;
substituted or unsubstituted C2-C8-alkenylene;
substituted or unsubstituted C2-C8-alkynylene;
an arylene group;
a single bond.
In one possible embodiment, the body portion is one of:
Figure BDA0002933419220000071
Figure BDA0002933419220000081
Figure BDA0002933419220000091
Figure BDA0002933419220000101
Figure BDA0002933419220000111
Figure BDA0002933419220000121
Figure BDA0002933419220000131
Figure BDA0002933419220000141
Figure BDA0002933419220000151
Figure BDA0002933419220000161
Figure BDA0002933419220000171
Figure BDA0002933419220000181
in one possible embodiment, the second light emitting portion includes only a first film layer, and the main body portion and the guest body portion are located on the first film layer.
In one possible embodiment, the second light emitting section includes a second film layer and a third film layer located on a side of the second film layer facing away from the first electrode, wherein the main body section and the guest body section are located on the third film layer; the third film layer emits green light, the second film layer emits blue light, and the blue light emitted by the second film layer is absorbed by the third film layer and excites the third film layer to emit green light.
In one possible embodiment, the overlapping area of the absorption spectrum of the body portion of the third film layer and the electroluminescence spectrum of the guest portion of the second film layer is greater than 5%.
In one possible embodiment, the second film layer and the third light emitting portion are made of the same material in the same layer.
In one possible embodiment, in the second light emitting portion, a difference between a triplet excited state level of the host portion and a triplet excited state level of the guest portion is greater than 0.2 eV.
In one possible embodiment, the first electrode is an anode and the second electrode is a cathode; a hole injection layer is further arranged between the first electrode and the light-emitting layer, a hole transport layer is further arranged between the hole injection layer and the light-emitting layer, and an electron blocking layer is further arranged between the hole transport layer and the light-emitting layer; an electron injection layer is further arranged between the second electrode and the light-emitting layer, an electron transport layer is further arranged between the electron injection layer and the light-emitting layer, and a hole blocking layer is further arranged between the electron transport layer and the light-emitting layer;
a triplet excitation level of the main body portion in the second light emitting portion is smaller than a triplet excitation level of the electron blocking layer;
a triplet excitation level of the host portion in the second light emitting portion is smaller than a triplet excitation level of the hole-blocking portion;
the absolute value of the difference between the HOMO level of the host portion in the second light-emitting portion and the HOMO level of the electron-blocking layer is not more than 0.3 eV;
a difference absolute value between a HOMO level of the host portion in the second light-emitting portion and a HOMO level of the hole-blocking layer is not less than 0.1 eV;
the second light-emitting portion has a LUMO level absolute value of the main body portion larger than a LUMO level absolute value of the hole-blocking layer.
The embodiment of the invention also provides a display device which comprises the display panel provided by the embodiment of the invention.
The embodiment of the invention has the following beneficial effects: in the embodiment of the invention, the material of the main body portion of the second light emitting portion is a thermally activated delayed fluorescence material (TADF), singlet excitons generated by the transition of the excitons of the TADF from the excited triplet state to the excited singlet state reverse system emit fluorescence when the excitons transition to the ground state singlet state, which can greatly improve the light emitting efficiency of the display panel, and the difference between the singlet excited level S1 of the main body portion Host and the triplet excited level T1 is not more than 0.3eV, the main body portion contains an electron donating group and an electron accepting group, and the electron donating group and the electron accepting group satisfy the structural formula, so that the light emitting efficiency of the second light emitting portion 52 can be improved, and the display panel has higher light emitting efficiency.
Drawings
Fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of another display panel according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of performance testing of various embodiments of the present invention;
FIG. 4 is a second schematic diagram of performance testing of various embodiments of the present invention;
fig. 5 is a third schematic diagram of performance tests of multiple embodiments according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present disclosure more clear, the technical solutions of the embodiments of the present disclosure will be described below clearly and completely with reference to the accompanying drawings of the embodiments of the present disclosure. It is to be understood that the described embodiments are only a few embodiments of the present disclosure, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the disclosure without any inventive step, are within the scope of protection of the disclosure.
Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
To maintain the following description of the embodiments of the present disclosure clear and concise, a detailed description of known functions and known components have been omitted from the present disclosure.
Referring to fig. 1, an embodiment of the present invention provides a display panel, including: the light-emitting diode comprises a substrate base plate 1, a first electrode 21 positioned on one side of the substrate base plate 1, a light-emitting layer 5 positioned on one side, away from the substrate base plate 1, of the first electrode 21, and a second electrode 22 positioned on one side, away from the first electrode 21, of the light-emitting layer 5; wherein,
the light-emitting layer 5 includes a first light-emitting portion 51, a second light-emitting portion 52, and a third light-emitting portion 53, the light-emitting wavelength range of the first light-emitting portion 51 is larger than the light-emitting wavelength range of the second light-emitting portion 52, and the light-emitting wavelength range of the second light-emitting portion 52 is larger than the light-emitting wavelength range of the third light-emitting portion 53, specifically, the first light-emitting portion 51 may be a light-emitting portion that emits red light, the second light-emitting portion 52 may be a light-emitting portion that emits green light, the third light-emitting portion may be a light-emitting portion that emits blue light, and at; the main body part is made of a Thermally Activated Delayed Fluorescence (TADF), and the difference between the singlet excited level S1 and the triplet excited level T1 of the Host part is not more than 0.3eV, namely S1-T1 is not more than 0.3 eV; the main body part contains an electron-donating group Donor and an electron-accepting group Accept, and the electron-donating group Donor comprises the following structural formula:
Figure BDA0002933419220000211
the electron-accepting group Accept comprises the following structural formula:
Figure BDA0002933419220000212
wherein A1 is selected from one of B, N, S, O, C, Se, Si and F; a2 is selected from one of B, N, S, O, C, Se, Si and F; a3 is selected from one of B, N, S, O, C, Se, Si and F; and at least one of A2 and A3 is B. Specifically, a1 and a2 and A3 may be selected from one or two of B, N, S, O, C, Se, Si, F.
In the embodiment of the invention, the main body portion of the second light emitting portion 52 is made of a Thermally Activated Delayed Fluorescence (TADF) material, and the singlet excitons generated by the transition of the excitons of the TADF from the excited triplet state to the excited singlet state reverse system emit Fluorescence when the excitons transition to the ground singlet state, so that the light emitting efficiency of the display panel is greatly improved, and the difference between the singlet excited level S1 and the triplet excited level T1 of the main body portion Host is not more than 0.3eV, and the main body portion Host contains the electron donating group Donor and the electron accepting group Accept, and the electron donating group Donor and the electron accepting group Accept satisfy the above structural formula, so that the light emitting efficiency of the second light emitting portion 52 can be improved, and the display panel has high light emitting efficiency.
In one possible embodiment, the electron donating group Donor contained in the body portion Host in the second emitter portion 52 can include the following structural formula:
Figure BDA0002933419220000221
in the second light emitting part 52, the electron accepting group Accept included in the main body part Host includes the following structural formula:
Figure BDA0002933419220000222
wherein R1 is a single bond, carbazole, diphenylamino, phenoxazine, phenothiazine, dibenzoazasiline, pyrrolidine, piperidine, phenoxide, methoxide, C1-C8 aliphatic hydrocarbon group, C6-C30 aromatic hydrocarbon group, C3-C18 aromatic heterocyclic group, substituted C6-C36 aryl group or unsubstituted C6-C36 aryl group; r2 is a single bond, carbazole, diphenylamino, phenoxazine, phenothiazine, dibenzoazasilaline, pyrrolidine, piperidine, phenoxide, methoxide, aliphatic hydrocarbon group of C1-C8, aromatic hydrocarbon group of C6-C30, aromatic heterocyclic group of C3-C18, substituted C6-C36 aryl or unsubstituted C6-C36 aryl; r3 is a single bond, carbazole, diphenylamino, phenoxazine, phenothiazine, dibenzoazasilaline, pyrrolidine, piperidine, phenoxide, methoxide, aliphatic hydrocarbon group of C1-C8, aromatic hydrocarbon group of C6-C30, aromatic heterocyclic group of C3-C18, substituted C6-C36 aryl or unsubstituted C6-C36 aryl; r4 is a single bond, carbazole, diphenylamino, phenoxazine, phenothiazine, dibenzoazasilaline, pyrrolidine, piperidine, phenoxide, methoxide, aliphatic hydrocarbon group of C1-C8, aromatic hydrocarbon group of C6-C30, aromatic heterocyclic group of C3-C18, substituted C6-C36 aryl or unsubstituted C6-C36 aryl;
r5 is a connection structure of an electron donating group and an electron accepting group, and comprises one of the following or 2-3 groups formed by connecting the following groups:
a single bond;
benzene;
dibenzofuran;
dibenzothiophene;
carborane;
r6 is one or a combination of:
a cyano group;
pyrazole;
imidazole;
a triazole;
pyridine;
a pyrimidine;
a triazine;
aza-carbazole;
aza-dibenzofuran;
an aza-dibenzothiophene group;
linear alkyl of C1-C18;
C1-C18 branched substituted alkylene;
C2-C8 alkenylene;
alkynylene of C2-C8;
a single bond;
r7 is one or a combination of:
a cyano group;
pyrazole;
imidazole;
a triazole;
pyridine;
a pyrimidine;
a triazine;
aza-carbazole;
aza-dibenzofuran;
an aza-dibenzothiophene group;
linear alkyl of C1-C18;
C1-C18 branched substituted alkylene;
C2-C8 alkenylene;
alkynylene of C2-C8;
a single bond;
r8 is one or a combination of:
a cyano group;
pyrazole;
imidazole;
a triazole;
pyridine;
a pyrimidine;
a triazine;
aza-carbazole;
aza-dibenzofuran;
an aza-dibenzothiophene group;
linear alkyl of C1-C18;
C1-C18 branched substituted alkylene;
C2-C8 alkenylene;
alkynylene of C2-C8;
a single bond;
r10 is one or a combination of:
substituted or unsubstituted C2-C40-alkenyl;
substituted or unsubstituted C2-C40-alkynyl;
substituted or unsubstituted C6-C60-aryl;
substituted or unsubstituted C3-C57-heteroaryl;
substituted or unsubstituted C1-C9-alkylene;
substituted or unsubstituted C2-C8-alkenylene;
substituted or unsubstituted C2-C8-alkynylene;
an arylene group;
a single bond;
r11 is one or a combination of:
substituted or unsubstituted C2-C40-alkenyl;
substituted or unsubstituted C2-C40-alkynyl;
substituted or unsubstituted C6-C60-aryl;
substituted or unsubstituted C3-C57-heteroaryl;
substituted or unsubstituted C1-C9-alkylene;
substituted or unsubstituted C2-C8-alkenylene;
substituted or unsubstituted C2-C8-alkynylene;
an arylene group;
a single bond;
r12 is one or a combination of:
substituted or unsubstituted C2-C40-alkenyl;
substituted or unsubstituted C2-C40-alkynyl;
substituted or unsubstituted C6-C60-aryl;
substituted or unsubstituted C3-C57-heteroaryl;
substituted or unsubstituted C1-C9-alkylene;
substituted or unsubstituted C2-C8-alkenylene;
substituted or unsubstituted C2-C8-alkynylene;
an arylene group;
a single bond;
r13 is one or a combination of:
substituted or unsubstituted C2-C40-alkenyl;
substituted or unsubstituted C2-C40-alkynyl;
substituted or unsubstituted C6-C60-aryl;
substituted or unsubstituted C3-C57-heteroaryl;
substituted or unsubstituted C1-C9-alkylene;
substituted or unsubstituted C2-C8-alkenylene;
substituted or unsubstituted C2-C8-alkynylene;
an arylene group;
a single bond.
In one possible embodiment, in the second light emitting section 52, the main body portion Host is one of the following:
Figure BDA0002933419220000271
Figure BDA0002933419220000281
Figure BDA0002933419220000291
Figure BDA0002933419220000301
Figure BDA0002933419220000311
Figure BDA0002933419220000321
Figure BDA0002933419220000331
Figure BDA0002933419220000341
Figure BDA0002933419220000351
Figure BDA0002933419220000361
Figure BDA0002933419220000371
Figure BDA0002933419220000381
wherein B1-B27 represent the numbers of the corresponding materials.
Characterization test:
the distribution of HOMO and LUMO units of the TADF compound obtained by molecular dynamics simulation and DFT simulation is shown in table 1 below, and the simulation results and experimental device performance are shown in table 2 below:
table 1:
Figure BDA0002933419220000391
wherein the larger black areas represent the distribution areas of the electron cloud;
TABLE 2
Compound (I) Abs(nm) PL(nm) S1(eV) T1(eV) ΔEST(meV)
B1 415 496 2.508 2.485 23
B4 411 487 2.546 2.512 34
B8 412 487 2.546 2.514 32
B27 425 508 2.441 2.406 35
Wherein Abs represents a peak position of an absorption spectrum, PL represents a peak position of a photoluminescence wavelength, S1 represents a singlet excitation level, T1 represents a triplet excitation level, and Δ Est represents a difference between S1 and T1;
in a specific implementation, the first light-emitting part 51, the second light-emitting part 52, and the third light-emitting part 53 may each include a host material and a guest material, wherein the first light-emitting part 51 and the third light-emitting part 53 may include a host material different from that of the second light-emitting part 52, and the first light-emitting part 51 and the third light-emitting part 53 may include a guest material different from that of the second light-emitting part 52.
In specific implementation, as shown in fig. 1, the display panel may be in a front-facing structure, for example, the first electrode 21 may be an anode, and the second electrode 22 may be a cathode; a hole injection layer 31 is further arranged between the first electrode 21 and the light-emitting layer 5, a hole transport layer 32 is further arranged between the hole injection layer 31 and the light-emitting layer 5, and an electron blocking layer 33 is further arranged between the hole transport layer 32 and the light-emitting layer 5; an electron injection layer 41 is further provided between the second electrode 22 and the light-emitting layer 5, an electron transport layer 42 is further provided between the electron injection layer 41 and the light-emitting layer 5, and a hole blocking layer 43 is further provided between the electron transport layer 42 and the light-emitting layer 5. Specifically, in the implementation, the display panel may have an inverted structure, for example, the first electrode 21 may also be a cathode, the second electrode 22 may also be an anode, an electron injection layer 41 is further disposed between the first electrode 21 and the light emitting layer 5, an electron transport layer 42 is further disposed between the electron injection layer 41 and the light emitting layer 5, and a hole blocking layer 43 is further disposed between the electron transport layer 42 and the light emitting layer 5; a hole injection layer 31 is further provided between the second electrode 22 and the light-emitting layer 5, a hole transport layer 32 is further provided between the hole injection layer 31 and the light-emitting layer 5, and an electron blocking layer 33 is further provided between the hole transport layer 32 and the light-emitting layer 5.
In one possible embodiment, as shown in fig. 1, the second light-emitting part 52 includes only the first film layer 520, and the main body part and the guest body part of the second light-emitting part 52 are both located on the first film layer 520.
In one possible embodiment, referring to fig. 2, the second light emitting part 52 comprises a second film layer 521 and a third film layer 522 on the side of the second film layer 521 facing away from the first electrode 21, wherein the second light emitting part 52 has both the main body part Host and the guest part company on the third film layer 522; the third film 522 emits green light, the second film 521 emits blue light, and the blue light emitted from the second film 521 is absorbed by the third film 522 and excites the third film 522 to emit green light. In the embodiment of the invention, the second light emitting part 52 includes the second film 521 and the third film 522 located on the side of the second film 521 away from the first electrode 21, the second film 521 emits blue light, and the blue light emitted from the second film 521 is absorbed by the third film 522 and excites the third film 522 to emit green light, and the second film 521 emitting short-wavelength blue light excites the third film 522, so that the light emitting efficiency of the third film 522 can be enhanced, and the light emitting efficiency of the second light emitting part 52 is further improved.
In particular, the overlap area between the absorption spectrum of the body portion of the third film layer 522 and the electroluminescence spectrum of the guest portion of the second film layer 521 is greater than 5%.
In a specific implementation, the second film layer 521 and the third light emitting part 53 are made of the same material in the same layer. In the embodiment of the invention, the second film layer 521 and the third light emitting part 53 are made of the same material in the same layer, so that the second film layer 521 can be formed while the third light emitting part 53 is formed, and the manufacturing process of the display panel is simplified.
In one possible embodiment, the difference between the triplet excited state level T1 of the main body portion and the triplet excited state level T1 of the guest portion in the second light emitting portion 52 is greater than 0.2eV, i.e., T1(TADF) -T1(Dopant) ≧ 0.2 eV.
In specific embodiments, as shown in FIG. 1 or FIG. 2, the first electrode21 is an anode, and the second electrode 22 is a cathode; a hole injection layer 31(HIL) is further disposed between the first electrode 21 and the light emitting layer 5, a hole transport layer 32(HTL) is further disposed between the hole injection layer 31 and the light emitting layer 5, and an electron blocking layer 33(EBL) is further disposed between the hole transport layer 32 and the light emitting layer 5; an electron injection layer 41(EIL) is further disposed between the second electrode 22 and the light emitting layer 5, an electron transport layer 42(EBL) is further disposed between the electron injection layer 41 and the light emitting layer 5, and a hole blocking layer 43(HBL) is further disposed between the electron transport layer 42 and the light emitting layer 5; the triplet excitation level of the main body portion in the second light emitting portion 52 is smaller than the triplet excitation level of the electron blocking layer 33(EBL), i.e., T1(EBL) > T1 (TADF); the triplet excitation level of the main body portion in the second light emitting portion 52 is smaller than the triplet excitation level of the hole stopper 43(HBL), i.e., T1(HBL) > T1 (TADF); the absolute value of the difference between the HOMO level of the body portion in the second light emitting portion 52 and the HOMO level of the electron blocking layer 33(EBL) is not more than 0.3eV, i.e., | HOMOTADF∣-∣HOMOEBL≦ 0.5eV, which can reduce the gap (gap) and increase hole transport; the absolute value of the difference between the HOMO level of the host portion in the second light emitting portion 52 and the HOMO level of the hole blocking layer 43(HBL) is not less than 0.1eV, that is, | HOMOHBL∣-∣HOMOTADF| > 0.1eV, which is favorable for blocking the cavity; the absolute value of the LUMO level of the body portion in the second light emitting portion 52 is greater than the absolute value of the LUMO level, | LUMO, of the hole blocking layer 43(HBL)TADF∣>∣LUMOHBL| facilitating the transfer of electrons. In the embodiment of the invention, the above conditions are met, the light-emitting region can be limited in the light-emitting layer, the energy of the light-emitting layer is prevented from being diffused like a peripheral functional layer, and the light-emitting efficiency of the display panel can be further improved.
In order to more clearly understand the display panel provided by the embodiment of the present invention, the following specific examples are given:
specifically, the structure of the display panel includes: an Indium Tin Oxide (ITO) layer on a substrate (specifically, a glass substrate) is used as a first electrode 21 (anode), a hole injection layer 31(HIL) (5 nm-30 nm), a hole transport layer 32(HTL) (100 nm-2000 nm), an electron blocking layer 33(EBL) (5 nm-100 nm), a light-emitting layer 5(EML) (20 nm-100 nm), a hole blocking layer 43(HBL) (5 nm-100 nm), an electron transport layer 42(ETL) (20 nm-100 nm), an electron injection layer 41(EIL) (1 nm-10 nm) and a second electrode 22 (cathode); the device structure is specifically represented as: ITO/HIL/HTL/EBL/Host: Dopan/HBL/ETL/EIL/cathode; specifically, the HIL may be made of: MoO3, F4-TCNQ or HAT-CN: the material of the HTL may be: NPB, m-MTDATA, TPD or TAPC; the EBL may be: TCTA; in the light-emitting layer 5(EML), the Host material Host of the light-emitting portion that emits red light (i.e., the first light-emitting portion 51), the light-emitting portion that emits green light (i.e., the second light-emitting portion 52), and the light-emitting portion that emits blue light (i.e., the third light-emitting portion 53) may be selected from: the doping ratio of the guest material Dopant in one of mCBP, CBP, mCP, TCTA, DMQA and TPA can be as follows: 0.1 wt% to 100 wt%, specifically, 0.1 wt% to 10 wt%); the material of the HBL may be: CBP, Bphen or TPBI; the material of the ETL may be: TmPyPB or B4 PyPPM; the EIL may be made of: LiF, Yb or LiQ; the cathode material may be: mg or Ag;
specifically, the following device structures were prepared, respectively:
the first embodiment is as follows:
ITO/HIL (5nm)/HTL (40nm)/EBL (5 nm)/BH: BD (8 wt%, 15 nm)/Compound B27: GD (5 wt%, 20 nm)/RH: RD (5 wt%, 15nm)/HBL (5nm)/ETL (40nm)/EIL (1 nm)/cathode (100 nm); wherein, BH: BD (8 wt%) represents the doping ratio of the guest material BD to the total blue-emitting light-emitting material in the blue-emitting light-emitting part, i.e., the third light-emitting part 53, and compound B27 represents the TBDF material listed above corresponding to reference numeral B27, in which the doping ratio of the guest material to the total green-emitting light-emitting material is 5 wt%, RH: RD (5 wt%) represents that in the light emitting portion emitting red light, that is, in the first light emitting portion 51, the doping ratio of the guest material RD to the total red light emitting portion material is 5 wt%;
specifically, the material of the HTL may be:
Figure BDA0002933419220000431
the material of the ETL may be:
Figure BDA0002933419220000432
the material of the electron blocking layer (EB) may be:
Figure BDA0002933419220000441
the host material (BH) in the light emitting portion that emits blue light may be:
Figure BDA0002933419220000442
the guest material (BD) in the light emitting portion that emits blue light may be:
Figure BDA0002933419220000451
the guest material (GD) in the light emitting portion that emits green light may be:
Figure BDA0002933419220000452
the guest material (RD) in the light emitting portion emitting red light may be:
Figure BDA0002933419220000461
the material (EIL) of the electron injection layer may be:
Figure BDA0002933419220000462
comparative example 1:
the device preparation process was the same as example 1 except that the compound B27 in the light-emitting layer was replaced with mCBP;
comparative example 2:
the device manufacturing process is the same as that of example 1 except that the structure of the light emitting layer shown in fig. 1 in example 1 is replaced with that of fig. 2;
example 2:
the device fabrication process of example 1 was the same except that the doping ratio of BD in example 1 was changed to 10 wt%;
example 3:
the device of example 1 was prepared in the same manner except that the doping ratio of GD in example 1 was changed to 8 wt%;
see table 3 below, and figures 3, 4, and 5 for a comparison of the performance of the examples:
Von(eV) CE(cd/B) PE(lm/W) EQE CIE LT95
example 1 2.6 66.4 73.6 21.7 (0.36,0.41) 100%
Comparative example 1 2.5 51.6 62.8 17.2 (0.36,0.41) 40%
Comparative example 2 2.6 74.8 79.7 21.2 (0.36,0.41) 84%
Example 2 2.6 57.7 59.7 18.5 (0.38,0.41) 86%
Example 3 2.6 61.8 66.6 20.8 (0.39,0.41) 93%
Where Von represents the turn-on voltage, CE represents the current efficiency, PE represents the luminous efficiency, EQE represents the external quantum efficiency, CIE denotes the color coordinates, LT95The life ratio when the luminance was reduced from 100% to 95% is shown, wherein the life ratio is understood to be a ratio of the life of the other device structures to the life of example 1 as a reference.
The embodiment of the invention also provides a display device which comprises the display panel provided by the embodiment of the invention.
The embodiment of the invention has the following beneficial effects: in the embodiment of the invention, the material of the main body portion of the second light emitting portion 52 is a thermally activated delayed fluorescent material, singlet excitons generated by the transition of the excitons of the TADF from the excited triplet state to the excited singlet state reverse system emit fluorescence when the excitons transition to the ground state singlet state, which can greatly improve the light emitting efficiency of the display panel, and the difference between the singlet excited level S1 of the main body portion Host and the triplet excited level T1 is not more than 0.3eV, the main body portion Host contains the electron donating group Donor and the electron accepting group Accept, and the electron donating group Donor and the electron accepting group Accept satisfy the above structural formula, so that the light emitting efficiency of the second light emitting portion 52 can be improved, and the display panel has higher light emitting efficiency.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.

Claims (10)

1. A display panel, comprising: the LED display device comprises a substrate base plate, a first electrode positioned on one side of the substrate base plate, a light-emitting layer positioned on one side of the first electrode, which is far away from the substrate base plate, and a second electrode positioned on one side of the light-emitting layer, which is far away from the first electrode; wherein,
the light-emitting layer includes a first light-emitting portion having a light-emitting wavelength range larger than a light-emitting wavelength range of a second light-emitting portion having a light-emitting wavelength range larger than a light-emitting wavelength range of a third light-emitting portion, and a third light-emitting portion including a main body portion and a passenger body portion; the main body part is made of a thermally activated delayed fluorescence material, and the difference between the singlet excited level and the triplet excited level of the main body part is not more than 0.3 eV; the body portion contains an electron donating group and an electron accepting group, the electron donating group comprising the following structural formula:
Figure FDA0002933419210000011
the electron accepting group includes the following structural formula:
Figure FDA0002933419210000012
wherein A1 is selected from one of B, N, S, O, C, Se, Si and F; a2 is selected from one of B, N, S, O, C, Se, Si and F; a3 is selected from one of B, N, S, O, C, Se, Si and F; and at least one of A2 and A3 is B.
2. The display panel of claim 1 wherein the electron donating group comprises the formula:
Figure FDA0002933419210000021
the electron accepting group includes the following structural formula:
Figure FDA0002933419210000022
wherein R1 is a single bond, carbazole, diphenylamino, phenoxazine, phenothiazine, dibenzoazasiline, pyrrolidine, piperidine, phenoxide, methoxide, C1-C8 aliphatic hydrocarbon group, C6-C30 aromatic hydrocarbon group, C3-C18 aromatic heterocyclic group, substituted C6-C36 aryl group or unsubstituted C6-C36 aryl group; r2 is a single bond, carbazole, diphenylamino, phenoxazine, phenothiazine, dibenzoazasilaline, pyrrolidine, piperidine, phenoxide, methoxide, aliphatic hydrocarbon group of C1-C8, aromatic hydrocarbon group of C6-C30, aromatic heterocyclic group of C3-C18, substituted C6-C36 aryl or unsubstituted C6-C36 aryl; r3 is a single bond, carbazole, diphenylamino, phenoxazine, phenothiazine, dibenzoazasilaline, pyrrolidine, piperidine, phenoxide, methoxide, aliphatic hydrocarbon group of C1-C8, aromatic hydrocarbon group of C6-C30, aromatic heterocyclic group of C3-C18, substituted C6-C36 aryl or unsubstituted C6-C36 aryl; r4 is a single bond, carbazole, diphenylamino, phenoxazine, phenothiazine, dibenzoazasilaline, pyrrolidine, piperidine, phenoxide, methoxide, aliphatic hydrocarbon group of C1-C8, aromatic hydrocarbon group of C6-C30, aromatic heterocyclic group of C3-C18, substituted C6-C36 aryl or unsubstituted C6-C36 aryl;
r5 is a connecting structure of the electron donating group and the electron accepting group, and comprises one of the following groups or 2-3 groups formed by connecting the following groups:
a single bond;
benzene;
dibenzofuran;
dibenzothiophene;
carborane;
r6 is one or a combination of:
a cyano group;
pyrazole;
imidazole;
a triazole;
pyridine;
a pyrimidine;
a triazine;
aza-carbazole;
aza-dibenzofuran;
an aza-dibenzothiophene group;
linear alkyl of C1-C18;
C1-C18 branched substituted alkylene;
C2-C8 alkenylene;
alkynylene of C2-C8;
a single bond;
r7 is one or a combination of:
a cyano group;
pyrazole;
imidazole;
a triazole;
pyridine;
a pyrimidine;
a triazine;
aza-carbazole;
aza-dibenzofuran;
an aza-dibenzothiophene group;
linear alkyl of C1-C18;
C1-C18 branched substituted alkylene;
C2-C8 alkenylene;
alkynylene of C2-C8;
a single bond;
r8 is one or a combination of:
a cyano group;
pyrazole;
imidazole;
a triazole;
pyridine;
a pyrimidine;
a triazine;
aza-carbazole;
aza-dibenzofuran;
an aza-dibenzothiophene group;
linear alkyl of C1-C18;
C1-C18 branched substituted alkylene;
C2-C8 alkenylene;
alkynylene of C2-C8;
a single bond;
r10 is one or a combination of:
substituted or unsubstituted C2-C40-alkenyl;
substituted or unsubstituted C2-C40-alkynyl;
substituted or unsubstituted C6-C60-aryl;
substituted or unsubstituted C3-C57-heteroaryl;
substituted or unsubstituted C1-C9-alkylene;
substituted or unsubstituted C2-C8-alkenylene;
substituted or unsubstituted C2-C8-alkynylene;
an arylene group;
a single bond;
r11 is one or a combination of:
substituted or unsubstituted C2-C40-alkenyl;
substituted or unsubstituted C2-C40-alkynyl;
substituted or unsubstituted C6-C60-aryl;
substituted or unsubstituted C3-C57-heteroaryl;
substituted or unsubstituted C1-C9-alkylene;
substituted or unsubstituted C2-C8-alkenylene;
substituted or unsubstituted C2-C8-alkynylene;
an arylene group;
a single bond;
r12 is one or a combination of:
substituted or unsubstituted C2-C40-alkenyl;
substituted or unsubstituted C2-C40-alkynyl;
substituted or unsubstituted C6-C60-aryl;
substituted or unsubstituted C3-C57-heteroaryl;
substituted or unsubstituted C1-C9-alkylene;
substituted or unsubstituted C2-C8-alkenylene;
substituted or unsubstituted C2-C8-alkynylene;
an arylene group;
a single bond;
r13 is one or a combination of:
substituted or unsubstituted C2-C40-alkenyl;
substituted or unsubstituted C2-C40-alkynyl;
substituted or unsubstituted C6-C60-aryl;
substituted or unsubstituted C3-C57-heteroaryl;
substituted or unsubstituted C1-C9-alkylene;
substituted or unsubstituted C2-C8-alkenylene;
substituted or unsubstituted C2-C8-alkynylene;
an arylene group;
a single bond.
3. The display panel of claim 1, wherein the body portion is one of:
Figure FDA0002933419210000061
Figure FDA0002933419210000071
Figure FDA0002933419210000081
Figure FDA0002933419210000091
Figure FDA0002933419210000101
Figure FDA0002933419210000111
Figure FDA0002933419210000121
Figure FDA0002933419210000131
Figure FDA0002933419210000141
Figure FDA0002933419210000151
Figure FDA0002933419210000161
Figure FDA0002933419210000171
4. the display panel according to any one of claims 1 to 3, wherein the second light-emitting portion includes only a first film layer, and the main body portion and the guest body portion are located on the first film layer.
5. The display panel according to any one of claims 1 to 3, wherein the second light-emitting portion includes a second film layer and a third film layer located on a side of the second film layer facing away from the first electrode, wherein the main body portion and the guest body portion are located on the third film layer; the third film layer emits green light, the second film layer emits blue light, and the blue light emitted by the second film layer is absorbed by the third film layer and excites the third film layer to emit green light.
6. The display panel of claim 5, wherein an overlap area of an absorption spectrum of the body portion of the third film layer and an electroluminescence spectrum of the guest portion of the second film layer is greater than 5%.
7. The display panel of claim 6, wherein the second film layer and the third light emitting portion are the same layer and material.
8. The display panel according to claim 1, wherein a difference between a triplet excited state level of the body portion and a triplet excited state level of the guest portion in the second light-emitting portion is larger than 0.2 eV.
9. The display panel according to claim 8, wherein the first electrode is an anode and the second electrode is a cathode; a hole injection layer is further arranged between the first electrode and the light-emitting layer, a hole transport layer is further arranged between the hole injection layer and the light-emitting layer, and an electron blocking layer is further arranged between the hole transport layer and the light-emitting layer; an electron injection layer is further arranged between the second electrode and the light-emitting layer, an electron transport layer is further arranged between the electron injection layer and the light-emitting layer, and a hole blocking layer is further arranged between the electron transport layer and the light-emitting layer;
a triplet excitation level of the main body portion in the second light emitting portion is smaller than a triplet excitation level of the electron blocking layer;
a triplet excitation level of the host portion in the second light emitting portion is smaller than a triplet excitation level of the hole-blocking portion;
the absolute value of the difference between the HOMO level of the host portion in the second light-emitting portion and the HOMO level of the electron-blocking layer is not more than 0.3 eV;
a difference absolute value between a HOMO level of the host portion in the second light-emitting portion and a HOMO level of the hole-blocking layer is not less than 0.1 eV;
the second light-emitting portion has a LUMO level absolute value of the main body portion larger than a LUMO level absolute value of the hole-blocking layer.
10. A display device characterized by comprising the display panel according to any one of claims 1 to 9.
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